KR20190013582A - Substrate - Google Patents

Abstract

The present application relates to a substrate formed with a specific-shaped spacer, the substrate including an alignment film formed on the spacer, and an optical device and the like using the substrate. In the present application, a structure capable of forming a spacer having a high drop and a desired dark color ensured is able to be presented.

Description

[0001]

This application claims the benefit of priority based on Korean Patent Application No. 10-2017-0095466 filed on July 27, 2017, and the entire contents of which are incorporated herein by reference.

The present application is directed to a substrate.

Optical devices in which a light modulating material such as a liquid crystal compound or a mixture of a liquid crystal compound and a dye is disposed between substrates disposed opposite to each other to adjust the transmittance, hue, or reflectivity of light is known. For example, Patent Document 1 discloses a so-called GH cell (Guest host cell) applying a mixture of a liquid crystal host (liqid crystal host) and a dichroic dye guest.

In such a device, so-called spacers are located between the substrates to maintain the spacing between the substrates.

Patent Document 1: European Patent Publication No. 0022311

The present application provides a substrate.

Unless otherwise specified, the physical properties measured at room temperature when the measured temperature affects the result in the properties mentioned in the present specification. The term ambient temperature is a natural, non-warming or non-warming temperature, usually at a temperature within the range of about 10 ° C to 30 ° C, or about 23 ° C or about 25 ° C. In addition, unless otherwise specified herein, the unit of temperature is degrees Celsius.

Unless otherwise specified otherwise, the physical properties measured at normal pressure are those measured when the measured pressure affects the result in the physical properties mentioned in this specification. The term atmospheric pressure is a natural temperature without being pressurized or depressurized, and usually about 1 atm is referred to as atmospheric pressure.

The substrate of the present application includes a base layer and a spacer existing on the base layer, and may also include a black layer between the base layer and the spacer. The spacer may be formed in various shapes. For example, FIG. 1 is a schematic view showing a case where a black layer is formed on a lower portion of a hemispherical, cylindrical, rectangular columnar or mesh spacer.

Figs. 2 and 3 are diagrams showing the case where the spacer 20 is present on the base material layer 10 as an example substrate of the present application. Fig.

As the substrate layer, any substrate layer used in a substrate in a configuration of a known optical device such as a liquid crystal display (LCD) can be applied without particular limitation. For example, the substrate layer may be an inorganic substrate layer or an organic substrate layer. As the inorganic base layer, a glass base layer and the like can be exemplified. As the organic base layer, various plastic films and the like can be exemplified. Plastic films include TAC (triacetyl cellulose) film; Cycloolefin copolymer (COP) films such as norbornene derivatives; Polyacrylate films such as PMMA (poly (methyl methacrylate), polycarbonate films, polyolefin films such as PE (polyethylene) or PP (polypropylene), polyvinyl alcohol films, DAC (diacetyl cellulose) A polyether sulfone (PES) film, a polyetheretherketone (PES) film, a polyphenylsulfone (PPS) film, a polyetherimide (PEI) film, a polyethylenemaphthatate (PEN) film, a polyethyleneterephtalate (PET) Film or PAR (polyarylate) film, and the like can be exemplified, but are not limited thereto.

In one example, the substrate layer may be a so-called flexible substrate layer. In the present application, the black layer to be described later can be effectively formed on the flexible base layer without defects such as cracks and the durability of the black layer can be ensured even when the base layer is bending according to the application purpose or the like have. The specific kind of the flexible substrate layer is not particularly limited, and a plastic film, an extremely thin inorganic substrate such as a thin glass, and the like can be mainly used as the flexible substrate layer.

The thickness of the substrate layer in the substrate of the present application is not particularly limited, and an appropriate range may be selected depending on the application.

Spacers are present on the base layer. The spacer may be fixed to the substrate layer. In this case, the spacer may be fixed directly in contact with the substrate layer, or may be fixed on the other layer if there is another layer between the substrate layer and the spacer. The type of the other layer includes a known layer necessary for driving the optical device, and for example, an electrode layer or a black layer described later can be exemplified.

In one example of the substrate of the present application, the spacer may be a transparent column spacer, and a black layer may be formed on a lower portion of the transparent column spacer.

When the spacer is transparent, the transmittance of the spacer is at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75% , Not less than 80%, not less than 85%, or not less than 90%. In this case, the upper limit of the transmittance is not particularly limited. The transparent column spacer may be formed using a transparent resin according to a general method for producing a column spacer. Typically, the visible light region is in the range of approximately 380 nm to 720 nm, and in one example, the transmittance can be measured at a wavelength of approximately 550 nm.

The shape of the column spacer in the present application is not particularly limited and may be, for example, a cylindrical shape, a polygonal column shape such as a triangular shape, a square shape, a pentagonal shape or a hexagonal column shape, or a hemispherical shape, mesh shape, . FIG. 1 is a cross-sectional view to which a square columnar spacer 20 is applied, and FIG. 2 is a cross-sectional view to which a hemispherical spacer 20 is applied.

In the present application, there is a black layer below the transparent column spacer, i.e. between the transparent column spacer and the substrate layer.

In this specification, the term top refers to the direction from the base layer toward the spacer formed on the base layer, and the bottom refers to the opposite direction of the top. In addition, the black layer may mean a layer having an optical density of about 1 to about 6. The black layer may exhibit the optical density when observed in either the upper or lower direction of the substrate, and in some cases may exhibit the optical density when observed on both the upper and lower sides. The optical density can be obtained by measuring the transmittance (unit:%) of the black layer and then substituting it into the optical density (optical density = -log ₁₀ (T) and T = transmittance). The optical density may be about 1.5 or more, 2 or more, 2.5 or more, 3 or more, 3.5 or more, 4 or more or 4.5 or more, or about 5.5 or less or about 5 or less in other examples.

In an optical device capable of adjusting the transmittance, hue and / or reflectivity of light, the area where the spacer is present becomes optically inactive. Therefore, in some cases, it is necessary to blacken the area where the spacer exists. For this purpose, for example, a method in which the spacer itself is made black, for example, a method of manufacturing a column spacer using a black resin can be considered, but in such a case, the black resin itself absorbs light, It is not easy to manufacture a spacer of a high-end car. However, through the introduction of the above-described structure, it is possible to form a substrate which is formed as a high-stage gap, and which prevents deterioration of optical characteristics due to inactive regions when the optical device is driven.

For example, the height of the spacer may be in the range of 1 탆 to 50 탆. The height may be 3 탆 or more, 5 탆 or more, 7 탆 or more, 9 탆 or more, 11 탆 or more, 13 탆 or more, 15 탆 or more, 17 탆 or more, 19 탆 or more, 21 탆 or more, 48 μm or less, 44 μm or less, 42 μm or less, 40 μm or less, 38 μm or less, 36 μm or less, 34 μm or less, 32 μm or less, 30 μm or less, 28 μm or less, Mu m or less or 26 mu m or less.

The black layer may be formed using various materials capable of realizing black. For example, the black layer may be a metal layer, a metal oxide layer, a metal nitride layer or a metal oxynitride layer, or a layer containing a pigment or a dye.

The specific material of the black layer is not particularly limited and includes, for example, Au, Pb, Nb, Pd, ), Tin (Sn), aluminum (Al), copper (Cu), nickel (Ni), vanadium (V), tungsten (W), tantalum (Ta), molybdenum A metal such as chromium (Cr) or cobalt (Co), an alloy metal containing two or more of the above metals, an oxide, a nitride or an oxynitride of the above metal, Dyes may also be used.

Depending on the purpose, the black layer may have a single-layer structure or a multi-layer structure. In one example, the black layer may have a multi-layer structure so as to achieve the desired darkening while ensuring the efficiency of the process. For example, the black layer may have a two-layer structure including a first layer which is a metal layer and a second layer which is a metal oxide layer, a metal nitride layer or a metal oxynitride layer, or a two- Layer structure having a three-layer structure formed thereon. The second layer may be a metal oxynitride layer in one example. 4 and 5 are views showing a substrate on which a black layer having a three-layer structure formed with the first layer 301 and the second layer 302 as described above is formed. In such a multi-layer structure, the proper refractive index, transmission characteristic and / or reflection characteristic of the first layer and the second layer may be correlated with each other to attain an appropriate dark coloration. In particular, in the case of the above- Appropriate darkening can be achieved on both sides of the layer. The specific kind of the metal, the metal oxide, the metal nitride and / or the metal oxynitride used in the first layer and the second layer is not particularly limited, and for example, a suitable kind among the above-mentioned materials can be selected. In one example, the second layer may have an oxide, nitride, or oxynitride containing the same metal as applied in the first layer.

The spacer and the black layer may be overlapped with each other when viewed from the top or the bottom.

The black layer may have an area equal to or less than the bottom of the spacer. That is, for example, the black layer may exist only substantially within the area where the spacer is present. For example, the ratio (T / B) of the area (B) of the black layer to the area (T) of the bottom of the spacer may be in the range of 0.5 to 1.5. In another example, the ratio T / B may be about 0.55 or more, about 0.6 or more, about 0.65 or more, about 0.7 or more, about 0.75 or more, about 0.8 or more, about 0.85 or more, about 0.9 or more or about 0.95 or more. In another example, the ratio T / B may be about 1.45 or less, about 1.4 or less, about 1.35 or less, about 1.3 or less, about 1.25 or less, about 1.2 or less, about 1.15 or less, about 1.1 or less, . In this arrangement, it is possible to appropriately prevent the occurrence of light leakage or the like when the optical device is driven while ensuring a proper adhesion force of the spacer to the substrate.

The black layer may have an appropriate thickness in consideration of a desired level difference and darkening. For example, the thickness of the black layer may be in the range of 30 nm to 5000 nm. Further, the thickness of each layer in the case where the black layer is formed into a multilayer structure can be selected in consideration of the desired level difference and / or darkening. For example, in the above-mentioned multi-layer structure, each of the first and second layers may have a thickness within a range of 30 nm to 200 nm.

In one example, the black layer may be formed based on a material having a physical ductility value of 0.6 or more. As used herein, the term " physical softness value " is a value known in the industry per material, and is a value obtained through the following equations A and B based on the Poisson ratio (v) of the material. The physical ductility value has a value within the range of 0 to 1, and the closer to 1, the more ductile the property.

[Formula A]

In Equation A, v is the Poisson's ratio of the material.

[Formula B]

로 구해지는 값이며, 상기에서 κ는 수식 A에서 구해지는 값이다.In equation (B), D is the physical ductility value, and x is the equation

. In the above, κ is a value obtained from the equation A.

The black layer may include a material having a physical ductility value of 0.55 or more, and the material may be, for example, metal. By applying such a material as described above, it is possible to solve a problem that a crack occurs or other defects occur in the process of forming the black layer, the case where the substrate is bent according to the use, and the like. The physical ductility value may be about 1 or less, about 0.95 or less, about 0.9 or less, about 0.85 or less, about 0.8 or less, about 0.75 or less, about 0.7 or about 0.65 or less, or about 0.6 or more. Examples of such materials include gold (Au, Physical Durability: about 0.93), lead (Pb, lead, Physical Ductility: about 0.93), niobium (Nb, Physical Ductility: about 0.82), Pd About 0.80), platinum (Pt, Physical Ductility: about 0.76), silver (Ag, Physical Ductility: about 0.73), V (Physical Ductility: about 0.73), tin (Al, Physical Ductility: about 0.65) or copper (Cu: Physical Density: about 0.62), but the present invention is not limited thereto.

The content related to the black layer already described in this specification can be equally applied using a material having the physical softness value of 0.6 or more.

For example, the metal layer, the metal oxide layer, the metal nitride layer, and / or the metal oxynitride layer can be formed using a metal having a physical softness value of 0.6 or more, and the content of the single layer or multi layer, thickness, The same can be applied.

The shape of the spacer formed together with the black layer is not particularly limited as described above.

In one example, the spacer may be a hemispherical spacer having at least a hemispherical portion formed thereon. By applying the spacer having such a hemispherical portion, even when the alignment treatment such as rubbing alignment or photo alignment is performed after the alignment layer is formed on the base layer on which the spacer is formed, even in the region where the spacer exists, An alignment process can be performed.

The term hemispherical portion in the present application may mean a portion of a spacer including a curved shape in which the trajectory of the cross section has a predetermined curvature. In addition, the trajectory of the cross section of the hemispherical portion may include a curved portion in which the center of curvature exists inside the cross section trajectory.

In one example, the hemispherical portion may have a maximum curvature of a cross-sectional locus of 2,000 mm < ^-1 > or less. As is known, the curvature is a numerical value representing the degree of curvature of a line, and is defined as an inverse number of a radius of curvature which is a radius of a contact point at a predetermined point of the curve. In the case of a straight line, the curvature is zero, and as the curvature increases, the curve bends further.

The degree of curvature of the hemispherical portion is controlled so that the maximum curvature of the cross-sectional locus of the hemispherical portion is 2,000 mm < ^-1 > or less so that uniform alignment treatment can be performed even when the alignment treatment of the alignment layer is performed on the hemispherical portion. The section for confirming the cross-sectional locus of the hemispherical portion may be any arbitrary plane for the base layer. In addition, the maximum curvature may mean the largest curvature among the curvatures for all the contact sources that can be obtained on the cross-sectional locus of the hemispherical portion. In other words, the end face of said hemispherical locus may not include a portion bent to a curvature greater than about 2,000 mm ^-1.

In other examples, the maximum curvature may be less than 1,800 mm ^-1, less than 1,600 mm ^-1, less than 1,400 mm ^-1, less than 1,200 mm ^-1, less than 1,000 mm ^-1, less than 900 mm ^-1, less than 950 mm ^-1 , ^-1 or less, 800 mm ^-1 or less, 750 mm ^-1 or less, 700 mm ^-1 or less, 650 mm ^-1 or less, 600 mm ^-1 or less, 550 mm ^-1 or less, 500 mm ^-1 or less, 450 mm ^-1 , Not more than 400 mm ^-1, not more than 350 mm ^-1, not more than 300 mm ^-1, not more than 250 mm ^-1, not more than 200 mm ^-1, or not more than 150 mm ^-1 . The maximum curvature may be at least 5 mm ^{-1, at} least 10 mm ^{-1, at} least 15 mm ^{-1, at} least 20 mm ^{-1, at} least 25 mm ^{-1, at} least 30 mm ^{-1, at} least 35 mm ^-1 , At least 40 mm ^{-1, at} least 45 mm ^-1, or at least 50 mm ^-1 .

The cross-sectional locus of the hemispherical portion may or may not include a portion having a curvature of zero, that is, a linear portion.

For example, FIG. 8 shows an example of a cross section of a hemispherical portion that does not include a portion having a curvature of 0, and FIG. 9 shows an example of a cross section of a hemispherical portion including a portion having a curvature of zero.

The spacer may include at least the hemispherical portion as described above. The spacer may be formed in various shapes as long as it includes the hemispherical portion. For example, the hemispherical spacer may have a shape in which the hemisphere is directly formed on the surface of the base layer 100 as shown in FIG. 8 or 9, or a columnar spacer including the hemisphere as shown in FIG. 10 or 11, Lt; / RTI >

The hemispherical portion of the hemispherical spacer may not include a portion having a curvature of zero as shown in FIG. 8 or 10, or a portion having a curvature of zero as shown in FIG. 9 or 11 And a flat surface on the top). Hereinafter, for convenience, the hemispherical portion of the same shape as that of the hemispherical portion of the spacer of FIG. 8 or 10 is referred to as a hemispherical portion, and a hemispherical portion of a shape having a flat surface at the upper portion like the hemispherical portion of the spacer of FIG. The portion can be referred to as a flat hemispherical portion.

8 to 11, H2 is the height of the hemispherical portion, R is the radius of curvature of the hemispherical portion, W1 is the length (width) of the flat surface of the flat hemispherical portion, W2 is the width of the spacer, H1 is the height Min < / RTI >

The hemispherical portion may be a complete hemispherical shape or an approximately hemispherical shape. The complete hemispherical shape is a hemispherical shape that satisfies the following relational expression 1, and the approximate hemispherical shape can be a hemispherical shape that satisfies any of the following relational expressions 2 to 4.

The hemispherical section may have a shape in which the cross-sectional shape satisfies any one of the following relational formulas (1) to (4).

[Relation 1]

a = b = R

[Relation 2]

a? b = R or b? a = R

[Relation 3]

a = b < R

[Relation 4]

a ≠ b <R

In the relational expressions 1 to 4, a is the horizontal length of the hemispherical section measured at the center of the imaginary contact circle of the hemispherical section, b is the vertical length of the hemispherical section measured at the center of the virtual contact circle of the hemispherical section, Is the radius of curvature of the imaginary contact circle of the hemispherical section.

The curvature radii in the relational expressions 1 to 4 correspond to the lengths indicated by R in Figs. 8 to 11.

In the relational expressions 1 to 4, the virtual contact circle may mean a contact circle having the largest radius of curvature among a plurality of imaginary contact radii in contact with the curved line forming the hemispherical portion.

Since the cross section of the hemispherical portion as a whole is curved in the case of the hemispherical portion as shown in Figs. 8 and 10, the contact circle having the greatest radius of curvature among the plurality of imaginary contact radii at arbitrary points of the curved line is expressed by the relational expressions 1 to 4 Can be a virtual contact circle. 9 and 11, if the hemispherical portion is a flat hemispherical portion, a contact circle having the greatest radius of curvature among a plurality of imaginary contact radii, which are arbitrary points of both curves except for the upper flat line, It becomes a virtual contact circle as referred to in relational expressions 1 to 4.

In the relational expressions 1 to 4, the horizontal length is a length measured in a direction parallel to the base layer surface (100 in Figs. 8 to 11) at the center point of the virtual contact circle, (100 in Figs. 8 to 11).

In the relational expressions 1 to 4, a is the distance from the center of the imaginary contact circle of the hemispherical section in the horizontal direction to the point where the hemispherical portion measured ends. The horizontal length may be a length measured from the center of the virtual contact circle in the rightward direction and two lengths measured in the leftward direction. The a applied in the relational expressions 1 to 4 is a short length of the two lengths Length. 8 and 10, the horizontal length a is a numerical value corresponding to 1/2 of the width W2 of the spacer. 9 and 11, the value (2a + W1) obtained by adding the length (width) W1 of the flat portion to twice the horizontal length (a) may correspond to the width W2 of the spacer.

In the relational expressions 1 to 4, b is the distance from the center of the virtual contact circle of the hemispherical cross section to the point where the hemispherical portion first contacts with the hemisphere portion in the vertical direction. This vertical length (b) can be generally the same as the height of the hemispherical portion, for example, the length denoted by H2 in Figs. 8 to 11.

Fig. 12 shows a case where the curved line of the hemispherical portion of the hemispherical portion satisfying the above-mentioned relational expression 1 has a complete circle curve, that is, a curve having the same curvature as the virtual contact circle.

13 to 17 show a curved shape of the approximate hemispherical portion satisfying any of relational expressions 2 to 4. [

A tapered portion may be formed at a lower portion of the spacer, for example, at a lower portion contacting the base layer side, the curved portion having a curvature center on the outer surface of the cross section. With this form, an excellent effect according to the specific shape of the spacer of the present application, for example, achievement of a uniform alignment treatment can be further improved.

The dimensions of the spacer of the above-described type are not particularly limited, and can be suitably selected in consideration of, for example, the cell gap of the desired optical device, the aperture ratio, and the like.

For example, the height of the hemispherical portion (H2 in Figs. 8 to 11) may be in the range of 1 탆 to 20 탆. The height may be 2 탆 or more, 3 탆 or more, 4 탆 or more, 5 탆 or more, 6 탆 or more, 7 탆 or more, 8 탆 or more, 9 탆 or more, 10 탆 or 11 탆 or more in another example. The height may also be 19 μm or less, 18 μm or less, 17 μm or less, 16 μm or less, 15 μm or less, 14 μm or less, 13 μm or less, 12 μm or less or 11 μm or less in other examples.

Further, the width of the hemispherical portion (W2 in Figs. 8 to 11) may be in the range of 2 탆 to 40 탆. The width may be 4 탆 or more, 6 탆 or more, 8 탆 or more, 10 탆 or more, 12 탆 or more, 14 탆 or more, 16 탆 or more, 18 탆 or more, 20 탆 or 22 탆 or more in other examples. The width may be 38 μm or less, 36 μm or less, 34 μm or less, 32 μm or less, 30 μm or less, 28 μm or less, 26 μm or less, 24 μm or less or 22 μm or less in other examples.

The height of the spacer is the same as the height of the hemispherical portion when the spacer has the shape as shown in FIG. 8 or 9, and in the case of the shapes as shown in FIGS. 10 and 11, the height of the hemispherical portion plus the height H1 of the column It can be a number. The height may be in the range of 1 [mu] m to 50 [mu] m in one example.

The height may be 3 탆 or more, 5 탆 or more, 7 탆 or more, 9 탆 or more, 11 탆 or more, 13 탆 or more, 15 탆 or more, 17 탆 or more, 19 탆 or more, 21 탆 or more, Mu m or more or 27 mu m or more. In another example, the height may be 48 탆 or less, 46 탆 or less, 44 탆 or less, 42 탆 or less, 40 탆 or less, 38 탆 or less, 36 탆 or less, 34 탆 or less, 32 탆 or less, 30 탆 or less, Mu m or less.

By controlling the dimensions of the hemispherical spacer or the hemispherical column spacer as described above, it is possible to uniformly perform the alignment treatment even on the alignment film formed on the spacer, maintain a uniform cell gap, The performance of the device can be maintained excellent.

The spacer may be formed using, for example, a transparent resin as described above. In one example, the spacer may be formed to include a transparent ultraviolet curable resin. For example, the ultraviolet curable compound can be formed by curing while keeping the shape of the ultraviolet curable compound in a state capable of forming a desired shape by an imprinting method described later. In this case, the ultraviolet curable compound A resin can form the spacer. The specific kind of ultraviolet curable compound that can be used for forming the spacer is not particularly limited, and for example, an acrylate-based polymer material or an epoxy-based polymer may be used, but the present invention is not limited thereto.

The method of manufacturing the spacer of the above-mentioned type by applying the above-mentioned materials in the present application is not particularly limited. For example, the spacer may be manufactured by applying an imprinting method.

However, in the case of hemispherical spacers among the various forms of the above-described spacers, it is difficult or impossible to manufacture them in a general manner, and they must be manufactured in the manner described below.

That is, the hemispherical spacer can be manufactured by applying an imprinting mask having a light-shielding film as schematically shown in FIG. The imprinting mask having the light shielding film shown in Fig. 18 has a concave hemispherical shape 9011 formed on one surface of a light transmissive body such as ultraviolet ray permeable body, and a semi-spherical shape is formed on the surface on which the hemispherical shape 9011 is formed And a light shielding film 902 is formed in a portion not formed. As shown in the drawing, the hemispherical shape 9011 is formed by forming an imprinting mold 901 on one surface of the main body 9 of the imprinting mask, and forming the hemispherical shape 9011 and the light shielding film 902 on the mold 901 . If necessary, the surface of the mold 901 on which the light-shielding film 902 is formed may be subjected to appropriate mold releasing treatment.

An exemplary process for fabricating the spacer using a mask of this type is shown in Fig. 19, a layer 200 of an ultraviolet curable compound is formed on the surface of a base material layer 100, and a concave portion of the mask 900 is pressed onto the layer 200. Next, Then, when the layer 200 of the compound is cured by irradiating ultraviolet light or the like on the mask having the light-shielding film formed thereon, the compound is cured according to the hemispherical shape formed in the mask 900 to form a spacer. The spacer can then be formed in a fixed form on the substrate layer 100 by removing the mask and removing the uncured compound.

The target hemispherical or hemispherical columnar spacer can be manufactured by adjusting the amount of ultraviolet light, the degree of squeezing of the mask, and / or the hemispherical shape of the mask 900 irradiated in the above process.

In order to form the black layer described above, the black layer may be previously formed between the layer 200 of the ultraviolet curable compound and the substrate layer 100 in the method of Fig. That is, a black layer is formed on the substrate layer 100 in advance, and after the curing process is performed, the uncured resin layer 200 is removed, and the remaining cured resin layer is applied again as a mask, By removing the black layer on the layer 100, the substrate in which a black layer is present between the spacer and the substrate layer can be produced. In addition, although FIG. 19 shows a method of using a mask for manufacturing hemispherical spacers, since the shape of the spacer is not limited as described above, the shape of the mask can be changed according to the shape of the desired spacer have. The method of forming the black layer on the upper part of the spacer may be a reverse offset method such as a method of selectively coating a resist ink on the embossed part (upper part of the spacer).

The substrate of the present application may include, in addition to the substrate layer and the spacer, other elements required for driving the optical device. These elements are variously known, and typically include an electrode layer and the like. 6 shows an example of a structure in which an electrode layer 40 is formed between a black layer 30 and a substrate layer 10 in the substrate of the structure of Fig. 1, and Fig. 7 shows an example of a structure in which a black layer 30 And an electrode layer 40 is formed between the base layer 10 and the substrate layer 10.

As shown in the figure, the substrate may further include an electrode layer between the base layer and the spacer. As the electrode layer, a known material can be applied. For example, the electrode layer may comprise a metal alloy, an electrically conductive compound, or a mixture of two or more thereof. As such a material, metal such as gold, CuI, indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), zinc oxide doped with aluminum or indium, magnesium indium oxide, nickel tungsten oxide, Metal oxides such as ZnO, SnO ₂ or In ₂ O ₃ , metal serrides such as gallium nitride and zinc selenide, and metal sulfides such as zinc sulfide. The transparent positive hole injecting electrode layer can also be formed using a metal thin film of Au, Ag or Cu and a laminate of a transparent material of high refractive index such as ZnS, TiO ₂ or ITO.

The electrode layer can be formed by any means such as vapor deposition, sputtering, chemical vapor deposition or electrochemical means. Patterning of the electrode layer is also possible in a known manner without any particular limitation, and may be patterned through a process using, for example, a known photolithography or a shadow mask.

The substrate of the present application may further include an alignment layer present on the substrate layer and the spacer.

Thus, another exemplary substrate of the present application comprises a substrate layer; A spacer present on the base layer; And an alignment layer formed on the base layer and the spacer.

The details of the base layer and the spacer in the above are the same as described above.

The kind of the alignment layer formed on the base layer and the spacer is not particularly limited, and a well-known alignment film, for example, a well-known rubbing alignment film or a photo alignment film can be applied.

The method of forming the alignment film on the base layer and the spacer and performing the alignment treatment thereon is also in accordance with a known method.

However, if the alignment layer is formed on the semi-spherical spacer in one example, the alignment layer may have a specific shape depending on the shape of the spacer. Fig. 20 is a diagram schematically showing the cross section of such an orientation film. Fig. 20 shows an example of a cross-sectional shape of an alignment film formed on the spacer, in which the upper portion has a hemispherical shape with a center of curvature formed inside the cross-section while having a predetermined width W3 and a height H3.

For example, the alignment film may also include the hemispherical portion described above. In this case, the hemispherical portion may have a maximum curvature of the cross-sectional locus of 2,000 mm &lt; ^-1 &gt; or less as in the case of the spacer. The maximum curvature is In another example 1,800 mm ^-1 or less, 1,600 mm ^-1 or less, 1,400 mm ^-1 or less, 1,200 mm ^-1 or less, 1,000 mm ^-1 or less, 900 mm ^-1 or less, 950 mm ^-1 or less, 850 mm ^-1 or less, 800 mm ^-1 or less, 750 mm ^-1 or less, 700 mm ^-1 or less, 650 mm ^-1 or less, 600 mm ^-1 or less, 550 mm ^-1 or less, 500 mm ^-1 or less, 450 mm ^{- 1} or less, 400 mm ^-1 or less, 350 mm ^-1 or less, 300 mm ^-1 or less, 250 mm ^-1 or less, 200 mm ^-1 or 150 mm ^-1 or less. The maximum curvature may be at least 5 mm ^{-1, at} least 10 mm ^{-1, at} least 15 mm ^{-1, at} least 20 mm ^{-1, at} least 25 mm ^{-1, at} least 30 mm ^{-1, at} least 35 mm ^-1 , At least 40 mm ^{-1, at} least 45 mm ^-1, or at least 50 mm ^-1 .

The cross-sectional locus of the hemispherical portion of the alignment film may or may not include a portion having a curvature of zero, that is, a linear portion.

The height or width of the alignment layer formed on the spacer as described above is not particularly limited as long as it is determined according to the height and width of the spacer existing therebelow and the thickness of the formed alignment layer.

For example, the height of the hemispherical portion (H3 in Fig. 20) may be in the range of 1 탆 to 50 탆. The height may be 2 탆 or more, 3 탆 or more, 4 탆 or more, 5 탆 or more, 6 탆 or more, 7 탆 or more, 8 탆 or more, 9 탆 or more, 10 탆 or 11 탆 or more in another example. In another example, the height is not more than 48 μm, not more than 46 μm, not more than 44 μm, not more than 42 μm, not more than 40 μm, not more than 38 μm, not more than 36 μm, not more than 34 μm, not more than 32 μm, Less than or equal to 26 탆, less than or equal to 24 탆, less than or equal to 22 탆, less than or equal to 19 탆, less than or equal to 18 탆, less than or equal to 17 탆, less than or equal to 16 탆, less than or equal to 15 탆, less than or equal to 14 탆, less than or equal to 13 탆, less than or equal to 12.

The width of the hemispherical portion (W3 in Fig. 20) may be in the range of 1 탆 to 80 탆. The width may be 2 탆 or more, 3 탆 or more, 4 탆 or more, 6 탆 or more, 8 탆 or more, 10 탆 or more, 12 탆 or more, 14 탆 or more, 16 탆 or more, 18 탆 or more, Or more. In another example, the width is not more than 78 μm, not more than 76 μm, not more than 74 μm, not more than 72 μm, not more than 70 μm, not more than 68 μm, not more than 66 μm, not more than 64 μm, 45 μm or less, 44 μm or less, 42 μm or less, 40 μm or less, 38 μm or less, 36 μm or less, 34 μm or less, 32 μm or less Or less, 30 mu m or less, 28 mu m or less, 26 mu m or less, 24 mu m or less, or 22 mu m or less.

As described above, in the case of the substrate of the present application, alignment treatment of the alignment film formed on the spacer by adjusting the shape of the spacer to a specific shape can be performed uniformly without being influenced by the step difference of the spacer.

In order to maximize this effect, the shape of the alignment layer can be further controlled.

For example, as shown in Figs. 20 and 21, the cross section of the alignment film may have a curved shape in which the center of curvature is formed on the outer side of the cross section, with the region facing upward from a point of contact with the base layer in the cross section of the alignment film. This shape can be formed, for example, in accordance with the shape of the spacer and the formation conditions of the orientation film. Thereby, even when the alignment treatment such as rubbing treatment is performed on the alignment film, a uniform alignment treatment which is not affected by the step of the spacer can be performed.

The base layer may include a plurality of spacers by including the same or different spacers, including hemispherical spacers as mentioned above. Such a plurality of spacers may be disposed on the base layer at the same time with predetermined regularity and irregularity. Specifically, at least a part of the plurality of spacers on the base layer is irregular in terms of being arranged so as to have mutually different pitches, but it may be regular in terms of being arranged with substantially the same density between regions determined according to a predetermined rule .

That is, in one example, at least some of the spacers disposed on the substrate layer may be arranged to have different pitches from one another.

In the above, the term pitch can be defined as the length of the side of the closed figure when a part of the plurality of spacers is selected so as to form a closed figure in which no other spacer is present therein. Unless otherwise specified, the unit of the pitch is 탆.

The formed figure to be formed may be triangular, square or hexagonal. That is, when three arbitrary spacers among a plurality of spacers are selected and connected to each other, the triangle is formed. When the four spacers are selected and connected to each other, the square is formed, and the six spacers are selected, When connected, the hexagon is formed. However, the closed figure formed at the time of determining the pitch is formed such that no spacer exists therein. For example, when the spacers are selected so that another spacer exists in the inside, do.

In one example, the ratio (%) of the number of sides having the same length among the sides of the triangle, quadrangle, or hexagon, which is the closed figure formed as described above (100 x (number of sides of the same length) 100 × (number of sides of the same length) / 4 in the case of hexagonal, and 100 × (number of sides of the same length) / 6 in the case of a hexagon can be 85% or less. In another example, the ratio may be 84% or less, 80% or less, 76% or less, 67% or less, 55% or 40% or less. The lower limit of the ratio is not particularly limited. That is, in some cases, since the lengths of all sides of the closed diagram may not be the same, the lower limit of the ratio may be 0%.

As described above, the arrangement of the spacers of the present application is irregular in that at least some of them have different pitches, but this irregularity is controlled under a certain regularity. The regularity described above may mean that the arrangement density of the spacers is substantially close to each other in a certain region.

For example, when the normal pitch of the plurality of irregularly arranged spacers is P, a plurality of square regions having a length of one side of 10P on the surface of the substrate layer are arbitrarily selected. The standard deviation of the number of spacers is 2 or less.

The term "normal pitch" means that a plurality of spacers arranged on the base layer in an actually irregular manner are arranged so that virtually all of the spacers are disposed at the same pitch in consideration of the number of the spacers and the area of the base layer, Center distance.

The manner in which all of the above-mentioned spacers are arranged so as to have the same pitch is known, and can be achieved by using a random number generating program such as CAD, MATLAB, STELLA or Excel have.

In addition, the standard deviation is a numerical value indicating the scattering degree of the number of the spacers, and is a numerical value determined by the square root of the amount of dispersion.

That is, when a standard deviation of the number of spacers existing in the region after designating at least two or more of the square regions is arbitrarily set on the surface on which the spacer of the base layer is formed, its standard deviation is 2 or less. The standard deviation may be 1.5 or less, 1 or less, or 0.5 or less in other examples. The lower limit of the standard deviation means that the desired regularity is achieved as the numerical value is lower, so that the lower limit is not particularly limited and may be zero, for example.

Although the number of the rectangular areas specified above is not particularly limited as long as the number of the rectangular areas is two or more, in an example, the rectangular areas are arbitrarily selected so as not to overlap each other on the surface of the base layer, At least about 10%, at least 20%, at least 30%, at least 40%, at least 50%, at least 60%, at least 70%, at least 80%, or at least 90% of the total area of the substrate layer have.

The range of the normal pitch P forming one side of the arbitrary rectangular area is not particularly limited as long as it can be determined by the number of spacers present on the base layer and the area of the base layer as described above, In the range of about 100 mu m to 1,000 mu m.

Although not particularly limited, the average number of spacers present in the randomly selected square regions as described above may be, for example, about 80 to about 150. In another example, the average number may be 82 or more, 84 or more, 86 or more, 88 or more, 90 or more, 92 or more, 94 or more, 96 or 98 or more. In another example, the average number is 148 or less, 146 or less, 144 or less, 142 or less, 140 or less, 138 or less, 136 or less, 134 or less, 132 or less, 130 or less, 128 Or less, 126 or less, 124 or less, 122 or less, 120 or less, 118 or less, 116 or less, 114 or less, or 112 or less.

The ratio SD / A of the average number A of the spacers to the standard deviation SD mentioned above may be 0.1 or less. In other examples, the ratio may be 0.09 or less, 0.08 or less, 0.07 or less, 0.06 or less, 0.05 or less, 0.04 or less, or 0.03 or less.

The average number (A) and the ratio (SD / A) may be changed depending on the case. For example, the transmittance, the cell gap, and / or the uniformity of the cell gap required in the device to which the substrate is applied The above values may be changed.

In another example, when the surface of the substrate layer on which the irregularly arranged spacers are formed is divided into two or more regions having the same area, the standard deviation of the number of the spacers in each unit region may be 2 or less.

The meaning of the standard deviation and the concrete examples thereof are as described above.

That is, in the above example, when the base layer is divided into at least two regions having the same area and the standard deviation of the numbers of the spacers present in the divided unit regions is obtained, the standard deviation thereof is 2 or less. In this case, the shape of each divided unit area is not particularly limited as long as the unit areas are divided so as to have the same area, but may be, for example, a triangular, square, or hexagonal area. Further, the standard deviation in the above state may be 1.5 or less, 1 or less, or 0.5 or less in other examples, and the lower limit thereof is not particularly limited as described above, and may be 0, for example.

The number of unit regions is not particularly limited, but in one example, the base layer may be divided into two or more, four or more, six or more, eight or more, or ten or more regions having the same area. The larger the number of divided regions, the more uniform the density of the spacers is, so the upper limit of the number of divided regions is not particularly limited.

When a virtual square area having the regular pitch P as one side is selected on the substrate on which the plurality of spacers are arranged so as to have regularity and irregularity at the same time, the average number of the spacers existing in the area is 0 to 4 It can be in range. The average number may be 3.5 or less, 3 or less, 2.5 or less, 2 or less, or 1.5 or less in other examples. The average number may also be greater than or equal to 0.5 in other examples. The number of square regions having a normal pitch P of one side arbitrarily specified is not particularly limited as long as the number of square regions is two or more. However, in one example, the square regions are arbitrarily selected so as not to overlap each other on the surface of the base layer, The area occupied by the randomly selected area is at least about 10%, at least 20%, at least 30%, at least 40%, at least 50%, at least 60%, at least 70%, at least 80%, or at least 90% Or more.

The total density of the plurality of spacers can be adjusted so that the ratio of the area occupied by the spacers to the entire area of the base layer is about 50% or less. In another example, less than or equal to about 45%, less than or equal to about 40%, less than or equal to about 35%, less than or equal to about 30%, less than or equal to about 25%, less than or equal to about 20%, less than or equal to about 15%, less than or equal to about 10% , Not more than 9%, not more than 8.5%, not more than 8%, not more than 7.5%, not more than 7%, not more than 6.5%, not more than 6%, not more than 5.5%, not more than 5%, not more than 4.5% Or less, 2.5% or less, 2% or less, or 1.5% or less. In another example, the ratio may be about 0.1% or more, 0.2% or more, 0.3% or more, 0.4% or more, 0.5% or more, 0.6% or more, 0.7% or more, 0.8% or more, 0.9% or more or 0.95% or more.

When a plurality of spacers are disposed on the substrate layer in the above-described manner, when the optical device is implemented, the spacers are formed so as to maintain the uniform cell gap between the substrates, while ensuring uniform optical characteristics without causing so- can do.

The above numerical values can be changed when necessary, for example, the numerical values can be changed in consideration of the transmittance, the cell gap, and / or the uniformity of the cell gap required in the device to which the substrate is applied .

The plurality of spacers may be arranged such that the spacing normal distribution diagram represents a predetermined shape.

In the above, the spacing normal distribution diagram is a distribution diagram showing the pitch between the spacers as the X-axis and the ratio of the spacers having the corresponding pitches as the Y-axis among all the spacers, wherein the ratio of the spacers was 1 It is the ratio that is obtained when.

In the present specification, the pitch in the description related to the above-described spacing normal distribution is the length of a side in a triangle, a quadrangle, or a hexagon, which is the above-mentioned closed shape.

The distribution diagram can be obtained by using a known random number coordinate program, for example, a CAD, MATLAB or STELLA random number coordinate program or the like.

In one example, the plurality of spacers may be arranged such that the half height area in the distribution diagram is in the range of 0.4 to 0.95. The half height area may be 0.6 or more, 0.7 or more, or 0.85 or more in other examples. The half height area may be 0.9 or less, 0.85 or less, 0.8 or less, 0.75 or less, 0.7 or less, 0.65 or less, 0.6 or less, 0.55 or less or 0.5 or less in another example.

The plurality of spacers may be arranged such that the ratio (FWHM / Pm) of the half height width (FWHM) to the average pitch (Pm) in the distribution diagram is 1 or less. The ratio (FWHM / Pm) may be 0.05 or more, 0.1 or more, 0.11 or more, 0.12 or more, or 0.13 or more in another example. In another example, the ratio FWHM / Pm is about 0.95 or less, about 0.9 or less, about 0.85 or less, about 0.8 or less, about 0.75 or less, about 0.7 or less, about 0.65 or less, about 0.6 or less, about 0.55 or less, About 0.5 or less, about 0.45 or less, or about 0.4 or less.

The average pitch Pm is defined by the spacers selected when at least 80%, at least 85%, at least 90% or at least 95% of the spacers are selected to form the triangular, square or hexagonal shape as described above. Is the average of the length of each side of a triangle, square, or hexagon. Also, in the above, the spacers are selected such that the triangles, squares or hexagons formed do not share vertices with each other.

The plurality of spacers may be arranged such that the half height width (FWHM) in the above distribution diagram is in the range of 0.5 mu m to 1,000 mu m. In another example, the half height width FWHM may be at least about 1 탆, at least 2 탆, at least 3 탆, at least 4 탆, at least 5 탆, at least 6 탆, at least 7 탆, at least 8 탆, 15 mu m or more, 16 mu m or more, 17 mu m or more, 18 mu m or more, 19 mu m or more, 20 mu m or more, 21 mu m or more, 22 mu m or more, 23 mu m or more, or 24 mu m or more. In another example, the half height width (FWHM) is about 900 占 퐉, 800 占 퐉, 700 占 퐉, 600 占 퐉, 500 占 퐉, 400 占 퐉, 300 占 퐉, 200 占 퐉, Or less, 90 μm or less, 80 μm or less, 70 μm or less, 60 μm or less, 50 μm or less, 40 μm or less, or 30 μm or less.

The plurality of spacers may be arranged such that the maximum height (Fmax) of the spacing normal distribution is at least 0.006 and less than 1. The maximum height Fmax may be about 0.007 or more, about 0.008 or more, about 0.009 or more, or about 0.0095 or more in other examples. In another example, the maximum height Fmax is about 0.9 or less, about 0.8 or less, about 0.7 or less, about 0.6 or less, about 0.5 or less, about 0.4 or less, about 0.3 or less, about 0.2 or less, about 0.1 or less, About 0.08 or less, about 0.07 or less, about 0.06 or less, about 0.05 or less, about 0.04 or less, about 0.03 or less, or about 0.02 or less.

When a plurality of spacers are arranged to have a spacing normal distribution of the above-described type, when the optical device is implemented through the substrate, the spacers maintain a uniform cell gap between the substrates while causing a so- So that uniform optical characteristics can be ensured.

The concept of irregularity is introduced so that a plurality of spacers are arranged so as to have both irregularity and regularity as described above. Hereinafter, a method for designing the arrangement of the above-described types of spacers will be described.

In order to achieve the arrangement of the spacers having the above-mentioned regularity and irregularity, a step of starting the normal arrangement and relocating the spacers to have irregularities is performed.

The normal arrangement state is a state in which a plurality of spacers are arranged on the base layer so as to form an equilateral triangle, a square, or a regular hexagon having the same length on all sides. 22 is a state in which spacers are arranged to form the square as an example. The length P of one side of the square in this state may be equal to the normal pitch mentioned above. In the above-described arrangement, a circle area having a radius having a length proportional to the length P of one side is designated on the basis of a point where one spacer exists, and the one spacer is randomly The program is set to move to For example, FIG. 22 schematically shows a form in which a circle area having a radius of 0.5% of a length of 50% of the length P is set and the spacer moves to an arbitrary point in the area. The above arrangement can be achieved by applying the above movement to spacers of at least 80%, 85%, 90%, 95% or 100% (all spacers).

In the above-described design method, the ratio to the length P, which is the radius of the original area, can be defined to be irregular. In one example, the irregularity in the design scheme is at least about 5%, at least about 10%, at least about 15%, at least about 20%, at least about 25%, at least about 30%, at least about 35% , About 45% or more, about 50% or more, about 55% or more, about 60% or more, or about 65% or more. In one example, the irregularity may be about 95% or less, about 90% or less, about 85% or less, or about 80% or less.

By arranging the spacers in the same manner as described above and forming the spacers according to the designed arrangement, it is possible to achieve the arrangement having the above-described irregularity and regularity at the same time.

In the above description, the steady state starts from a square. However, the steady state may be another shape such as an equilateral triangle or a regular hexagon. In this case, the above arrangement can also be achieved.

The means for designing the arrangement of the spacers in the above manner is not particularly limited, and a known random number coordinate program, for example, a CAD, MATLAB, STELLA or Excel random number coordinate program can be used.

For example, after the arrangement of the spacers is designed in the above-described manner, a mask having a pattern according to the design may be manufactured, and the spacer may be implemented by applying the mask to the lithography or imprinting method described above have.

The present application is also directed to an optical device formed using such a substrate.

An exemplary optical device of the present application may include a second substrate opposing the substrate and the substrate and spaced apart from the substrate by a spacer of the substrate.

In the optical device, a light-modulating layer may be present in an interval between the two substrates. The term optical modulation layer in the present application may include all known types of layers capable of changing at least one of the characteristics such as the polarization state, transmittance, color tone, and reflectance of the incident light according to purposes.

For example, the light modulating layer may be a liquid crystal layer that is switched between a diffusion mode and a transmissive mode by on-off of a voltage, for example, a vertical electric field or a horizontal electric field, A liquid crystal layer switched between a transmissive mode and a cut-off mode, a liquid crystal layer switched between a transmissive mode and a color mode, or a liquid crystal layer switching between color modes of different colors.

Various optical modulation layers, such as liquid crystal layers, are known in the art. As one exemplary optical modulation layer, it is possible to use a liquid crystal layer used in a typical liquid crystal display. In another example, the light modulating layer may include various types of so-called guest host liquid crystal layers, polymer dispersed liquid crystals, pixel-isolated liquid crystals, A particle device (Suspended Particle Deivice) or an electrochromic device.

The polymer dispersed liquid crystal layer (PDLC) is a superordinate concept including a pixel isolated liquid crystal (PILC), a polymer dispersed liquid crystal (PDLC), a polymer network liquid crystal (PNLC), a polymer stabilized liquid crystal . The polymer dispersed liquid crystal layer (PDLC) may include, for example, a polymer network and a liquid crystal region containing a liquid crystal compound that is dispersed in a state of being phase-separated from the polymer network.

The manner and form of the optical modulation layer are not particularly limited, and any known method may be employed without any limitations depending on the purpose.

In addition, the optical device may further include additional known functional layers such as a polarizing layer, a hard coating layer, and / or an antireflection layer, if necessary.

The present application is directed to a substrate, a substrate including an alignment film formed on the spacer, and an optical device using such a substrate, in which a specific type of spacer is formed. In the present application, a structure capable of forming a spacer of a high-stage difference in which a desired darkening is ensured can be presented.

Figures 1, 2, 4 to 7 show the structure of an exemplary substrate of the present application.
3 is an exemplary view showing the formation of the spacer.
8-11 are schematic diagrams of an exemplary form of the spacer of the present application.
12 to 17 are views for explaining an exemplary form of the spacer of the present application.
Fig. 18 is a view showing the shape of a mask which can be used for manufacturing the spacer of the present application, according to an example.
19 is a schematic view of a process of fabricating a spacer using the mask of FIG.
20 and 21 are schematic diagrams of exemplary cross sections of an alignment film formed on a spacer.
22 is a diagram for explaining a method of implementing the irregularity degree.
Figs. 23 to 36 are photographs of a black layer or spacer formed in Examples or Comparative Examples, or photographs for comparing performance of Examples or Comparative Examples. Fig.

The present application will be specifically described by way of the following examples, but the scope of the present application is not limited by the following examples.

Example 1.

An imprinting mask of the type shown in Fig. 18 was prepared, and hemispherical spacers were prepared using the same. The imprinting mask is formed by forming an imprinting mold 901 on a poly (ethylene terephthalate) body 9 according to the shape shown in FIG. 18, forming a recess 9011 in the mold 901, A black layer (AlO x N y) 902 was formed on the surface on which the concave portion 9011 was not formed and a release layer was formed on the black layer 902 and the concave portion 9011. At this time, the concave portion was formed into a hemispherical shape having a width of approximately 24 to 26 mu m and a height of approximately 9 to 10 mu m. In addition, the concave portion was formed such that the arrangement of the spacers was such that the degree of irregularity described in FIG. 22 was about 70%.

A crystalline ITO (Indium Tin Oxide) electrode layer (40 in Figs. 6 and 7) is formed on a PC (polycarbonate) base layer (10 in Figs. 6 and 7), and a black layer . The black layer is formed by depositing aluminum oxynitride (AlON), aluminum (Al) and aluminum oxynitride (AlON) to a thickness of about 60 nm, 80 nm and 60 nm, respectively, (AlON / Al / AlON). Aluminum is a metal whose physical ductility value is known to be about 0.65. Fig. 24 is a view of the base layer formed with the black layer formed thereon from above, and it can be confirmed that a black layer is stably formed without causing cracks or the like on the PC base layer, which is a flexible base layer.

Subsequently, about 2 to 3 mL of a mixture (UV (Ultraviolet) resin) of a conventional ultraviolet curing type acrylate-based binder and initiator used for preparing a column space is dropped on the black layer, The dropped mixture was pressed to cure the UV resin layer by irradiating ultraviolet rays while forming a laminate including a base layer, an electrode layer, a black layer, a UV resin layer and an imprinting mask layer. Through such a process, the condensing effect of the lens by the concave pattern of the mask 900 can be obtained, and the degree of curing of the cured portion can be increased.

Thereafter, the uncured UV resin layer 200 is removed (developed), and the black layer at the removed portion of the uncured UV resin layer is removed (etched) to form a hemispherical shape on the ITO electrode layer and the black layer of the PC substrate layer Thereby forming spacers.

Fig. 23 is a side view of the hemispherical spacer manufactured in the above manner, and the hemispherical spacer formed was about 12 mu m in height and about 25 mu m in width. Picture. 25 is a photograph of the liquid crystal cell manufactured by applying the substrate of the embodiment in the light shielding state.

Example 2.

A crystalline ITO (Indium Tin Oxide) electrode layer (40 in Figs. 6 and 7) is formed on a polycarbonate base layer (10 in Figs. 6 and 7) as in Example 1 and a black layer And 7 of 30). The black layer is formed by first depositing copper (Cu) on the ITO electrode layer to a thickness of about 80 nm and then depositing copper oxide (CuOx) to a thickness of about 30 nm to form a two-layer structure (Cu / CuOx) Respectively. Copper is a metal whose physical ductility value is known to be about 0.62. Subsequently, a spacer was prepared in the same manner as in Example 1, except that the mask was changed so as to form a columnar column spacer as a spacer. At the time of formation of the columnar columnar spacer, a commercial product of Corelink Co., Ltd., in which a light-shielding layer is formed on one side of a main body of a polyester film and then a protective layer is formed, is used as a photomask including the light- 26 is a photograph of the spacer formed as described above. 26 (a) is an OM shape and (b) is an SEM image.

Example 3.

Spacers were produced in the same manner as in Example 1, except that spacers arranged in a honeycomb shape were formed. 27 is a photograph of the spacer formed as described above. 27 (A) and 27 (B) are low-magnification and high-magnification SEM (Scanning Electron Microscope) images of the low-stage difference pattern, (C) high-magnification SEM (Scanning Electron Microscope) images of the high- Mode OM (Optical Microscopy) low magnification image, and (E) Transmission mode high magnification image.

Comparative Example 1

A spacer was prepared in the same manner as in Example 1, except that a black layer was not formed. 28 is a photograph of the liquid crystal cell to which the substrate of Comparative Example 1 is applied in the light shielding state.

Comparative Example 2

A liquid crystal cell was prepared by applying a black ball spacer (Sekisui Chem, KBN-512) known as a spacer without forming a black layer and a column spacer as in Example. The liquid crystal cell may be formed by coating an alignment film in which the black ball spacer is dispersed on the ITO electrode layer of a film on which an ITO electrode layer as a lower substrate layer is formed and then coating the ITO electrode layer of the film on which the ITO electrode layer is formed, And the ITO electrode layer of the coated lower substrate layer was disposed opposite to the ITO electrode layer. 29 is a photograph of the liquid crystal cell in the light shielding state.

Comparative Example 3

A spacer was prepared in the same manner as in Example 1, except that a black layer was not formed, and instead, carbon black was applied in an amount of about 3% by weight in an ultraviolet curable resin (UV) to form a column spacer. 30 is a photograph of the liquid crystal cell to which the substrate of Comparative Example 3 is applied in a light shielding state.

Test Example 1

31 and 32 are OM (Optical Microscopy) images of the column spacer film formed in Example 1 and Comparative Example 1, respectively.

31 is a low magnification (x200) reflective mode image, a low magnification (x200) transmissive mode image, a high magnification (x500) reflective mode image and a high magnification (x500) transmissive mode image of Example 1 from the left, (X200) reflective mode image of Example 1, a low magnification (x200) transmissive mode image, a high magnification (x500) reflective mode image, and a high magnification (x500) transmissive mode image.

33 and 34 are OM (Optical Microscopy) images of a low magnification (x200) and a high magnification (x500) transmission mode in a light shield mode in a liquid crystal cell manufactured by applying the column spacer film of Embodiment 1, (X200) and high magnification (x500) transmission mode OM (Optical Microscopy) images in the light shielding mode in the liquid crystal cell manufactured by applying the column spacer film of Comparative Example 1, respectively. In the comparative example 1, light leakage occurred at the column spacer formation site was observed, which resulted in an increase in transmittance.

Also, as a result of measurement after Black Ink coating, Example 1 showed lower total transmittance than the front Black Ink coating (11.7 占 퐉 front Black Ink coating transmittance: about 1.7%) due to high optical density compared to coated Black Ink, In the case of Comparative Example 1, the total transmittance was higher than that of the entire Black Ink coating due to light leakage (12.5 占 퐉 front Black Ink coating transmittance: about 2.2%).

Claims (15)

A base layer; A transparent column spacer formed on the base layer; And a black layer present between the transparent column spacer and the substrate layer. The substrate according to claim 1, wherein the substrate layer is a flexible substrate layer. The substrate according to claim 1, wherein the ratio (T / B) of the area (B) of the black layer to the area (T) of the bottom of the column spacer is in the range of 0.5 to 1.5. The substrate of claim 1 wherein the black layer has an area equal to or less than the bottom of the column spacer. The substrate according to claim 1, wherein the black layer and the column spacer overlap each other. The substrate according to claim 1, wherein the black layer comprises a metal having a physical softness value of 0.55 or more. The optical information recording medium according to claim 1, wherein the black layer is a metal layer of a metal having a physical ductility value of 0.55 or more, a metal oxide layer of a metal having a physical ductility value of 0.55 or more, a metal nitride layer of a metal having a physical ductility value of 0.55 or more, A metal oxynitride layer of a metal, or a laminate structure of two or more of the above. The substrate according to claim 7, wherein the black layer is a multilayer structure including a first layer which is the metal layer and a second layer which is the metal oxide layer, the metal nitride layer or the metal oxynitride layer. The substrate according to claim 7, wherein the black layer is a multilayer structure including the metal oxide layer, the metal nitride layer or the metal oxynitride layer on both sides of the first layer which is the metal layer. The substrate according to claim 1, wherein the black layer has a thickness in the range of 30 nm to 5000 nm. The substrate according to claim 8 or 9, wherein the thicknesses of the first layer and the second layer are each in the range of 30 nm to 200 nm. 2. The substrate of claim 1, wherein the spacer is a hemispherical spacer having a hemispherical portion at the top. The substrate according to claim 1, further comprising an electrode layer between the black layer and the substrate layer. 11. An optical device comprising: the substrate of claim 1; and a second substrate facing the substrate, the second substrate being spaced apart from the substrate by a spacer of the substrate. 15. The optical device of claim 14, wherein a liquid crystal material is present in an interval between the substrates.

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