KR20180135748A - Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same - Google Patents

Abstract

An object of the present invention is to provide an epoxy resin composition for sealing a semiconductor element, which can prevent an occurrence of chip marking. The present invention relates to an epoxy resin composition for sealing the semiconductor element and a semiconductor device sealed by using the same, wherein the epoxy resin composition comprises: an epoxy resin; a curing agent; inorganic fillers; and phenyl phenazinium-based compounds.

Description

TECHNICAL FIELD [0001] The present invention relates to an epoxy resin composition for encapsulating semiconductor devices, and a semiconductor device encapsulated with the epoxy resin composition. [0002] EPOXY RESIN COMPOSITION FOR ENCAPSULATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE ENCAPSULATED USING THE SAME [

TECHNICAL FIELD The present invention relates to an epoxy resin composition for sealing a semiconductor device and a semiconductor device sealed with the epoxy resin composition. More particularly, the present invention relates to The present invention relates to an epoxy resin composition for sealing a semiconductor element which can prevent a semiconductor chip marking phenomenon from occurring and a semiconductor device sealed by using the epoxy resin composition.

Recently, application fields of semiconductor devices have been diversified. Accordingly, the sensing ability of the sensor chip is also developing. Among the biometric chips for security of mobile devices and automobiles, fingerprint recognition chips are being applied to low cost and recognition convenience, and especially research on capacitance type is progressing rapidly. The electrostatic capacity method is a method of recognizing the fingerprint due to the difference in the capacitance of the fingerprint irregularities in the fingerprint recognition, and is being applied to mobile phones, automobiles and credit cards.

The fingerprint sensor of the capacitive type sensor improves the recognition rate by reducing the sealing thickness of the epoxy resin composition for sealing the semiconductor element molded on the upper surface of the semiconductor element or the fingerprint recognition rate by using the material of high relative dielectric constant. However, if the thickness of the epoxy resin composition for sealing semiconductor devices molded on the upper surface of the semiconductor device is reduced, a chip marking phenomenon in which semiconductor devices are seen after sealing may occur. Particularly, since the semiconductor element is spaced at a predetermined distance, the sealing thickness of the sealing composition is inevitably different between the space between the semiconductor element and the neighboring semiconductor element (that is, the space without the semiconductor element) The chip marking phenomenon can be further exacerbated by the hardening shrinkage.

SUMMARY OF THE INVENTION And to provide a epoxy resin composition for sealing a semiconductor device which can prevent a chip marking phenomenon from occurring.

Another object of the present invention is to provide And an excellent epoxy resin composition for semiconductor device sealing.

Another object of the present invention is to provide a semiconductor device which is sealed with the epoxy resin composition as described above.

The epoxy resin composition for semiconductor device encapsulation according to the present invention comprises an epoxy resin; Curing agent; Inorganic fillers; And a phenylphenazinium-based compound.

The phenylphenazinium-based compound May be a compound of formula 1: < EMI ID =

≪ Formula 1 >

(In the above formula (1), X is a monovalent anion)

The present invention provides a sealed semiconductor device using the epoxy resin composition for semiconductor device encapsulation according to the present invention.

The present invention There is provided an epoxy resin composition for sealing a semiconductor device which can prevent a chip marking phenomenon from occurring.

The present invention is characterized in that the relative dielectric constant and the thermal conductivity Thereby providing excellent epoxy resin compositions for sealing semiconductor devices.

The present invention provides a semiconductor device sealed with an epoxy resin composition as described above.

1 is a partial cross-sectional view of a specimen for chip marking evaluation.
Fig. 2 shows a state of ⊚ in which chip marking has not occurred at all.
FIG. 3 shows a state where a considerable number of chip markings have occurred.

The thinner the sealing thickness of the upper surface of the fingerprint recognition semiconductor device, the better the recognition rate can be obtained. For example, when used in mobile display devices or automobiles, the seal thickness may be less than about 0.50 mm. This results in a difference in sealing thickness between the upper surface of the semiconductor element and the space between the semiconductor element and the semiconductor element (space without the semiconductor element). Therefore, the chip marking phenomenon in which the semiconductor chip is viewed due to the difference in degree of curing shrinkage can not be avoided.

The present inventors have succeeded in securing a relative dielectric constant and a thermal conductivity so that they can be used for sealing semiconductor devices for fingerprint recognition sensors As a result of repeated studies to develop an epoxy resin for sealing a semiconductor element which can prevent chip marking phenomenon, it has been found out that the above object can be achieved by using a phenylphenazinium compound, Thereby completing the invention.

The epoxy resin composition according to the present invention may include an epoxy resin, a curing agent, an inorganic filler, and a phenylphenazinium-based compound .

The phenylpazinium based compound may be a compound represented by the following formula (1): < EMI ID =

≪ Formula 1 >

(Wherein X is a monovalent anion).

X is F ^- may be ^-, Cl ^-, I ^- or Br.

The phenylpazinium-based compound can eliminate the semiconductor chip marking phenomenon by flattening the final sealed surface regardless of the sealing thickness at the time of sealing the semiconductor device.

Hereinafter, the constituent components of the epoxy resin composition according to the present invention will be described in detail.

Epoxy resin

As the epoxy resin, epoxy resins generally used for sealing semiconductor devices can be used and are not particularly limited. Specifically, as the epoxy resin, an epoxy compound containing two or more epoxy groups in the molecule can be used. For example, the epoxy resin is an epoxy resin obtained by epoxidating a condensate of phenol or alkyl phenol and hydroxybenzaldehyde, a phenol aralkyl type epoxy resin, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a multifunctional epoxy Resin, naphthol novolak type epoxy resin, novolak type epoxy resin of bisphenol A / bisphenol F / bisphenol AD, glycidyl ether of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl type epoxy resin, dicyclopenta Diene-based epoxy resins, and biphenyl-type epoxy resins. More specifically, the epoxy resin may include at least one of a biphenyl type epoxy resin, a phenol aralkyl type epoxy resin, a cresol novolak type epoxy resin, and a multifunctional epoxy resin. Most preferably, the epoxy resin may use at least one of a biphenyl type epoxy resin and a phenol aralkyl type epoxy resin.

Specifically, the biphenyl-type epoxy resin may be represented by the following general formula (2), but is not limited thereto.

(2)

(Wherein R is an alkyl group having 1 to 4 carbon atoms and the average value of n is 0 to 7).

Specifically, the phenol aralkyl type epoxy resin can be represented by the following formula (3), but is not limited thereto.

(3)

(In the above formula (3), the average value of n is 1 to 7).

An epoxy resin having an epoxy equivalent of 100 g / eq to 500 g / eq can be used in consideration of the curing properties. Within the above range, the degree of curing can be increased.

The epoxy resin may be used singly or in combination, and may be added in the form of an additive compound prepared by subjecting an epoxy resin to a linear reaction such as a curing agent, a curing accelerator, a releasing agent, a coupling agent, and a stress relieving agent and a melt master batch .

The epoxy resin may be contained in an amount of 0.5 to 20% by weight, specifically 3 to 15% by weight in the epoxy resin composition for sealing a semiconductor device. Within this range, the curability of the composition may not be deteriorated.

Hardener

The hardener Curing agents generally used for sealing semiconductor devices can be used and are not particularly limited. Specifically, the curing agent may be a phenolic curing agent. For example, the phenolic curing agent may be a phenol aralkyl type phenol resin, a phenol novolak type phenol resin, a multifunctional type phenol resin, a xylok type phenol resin, Naphthol type phenol resin, terpene type phenol resin, dicyclopentadiene type phenol resin, novolac type phenol resin synthesized from bisphenol A and resole, tris (hydroxyphenyl) methane, dihydroxybiphenyl ≪ / RTI > polyhydric phenol compounds. Preferably, the phenolic curing agent is at least one of a phenol aralkyl type phenol resin, a phenol novolak type phenol resin, and a multifunctional phenol resin, most preferably a phenol aralkyl type phenol resin, a phenol novolak type phenol resin and a multifunctional phenol resin Can be used.

Specifically, the phenol aralkyl type phenol resin can be represented by the following general formula (4), but is not limited thereto.

≪ Formula 4 >

(The average value of n in Formula 4 is 1 to 7)

Specifically, the multifunctional phenol resin may be represented by the following formula (5), but is not limited thereto.

≪ Formula 5 >

(The average value of n in the above formula (5) is 1 to 7).

The curing agent may have a hydroxyl equivalent of 90 g / eq to 250 g / eq in consideration of the curability. Within the above range, the degree of curing can be increased.

The curing agent may be used alone or in combination. Further, it can be used as an additional compound prepared by subjecting the above-mentioned curing agent to a linear reaction such as an epoxy resin, a curing accelerator, a releasing agent, a stress relieving agent and the like, and a melt master batch.

The curing agent may be contained in an amount of 0.1 to 13% by weight, preferably 0.1 to 10% by weight in the epoxy resin composition for encapsulating semiconductor devices. Within this range, there is an effect that the curability of the composition is not lowered.

The blending ratio of the epoxy resin and the curing agent can be adjusted according to the requirements of mechanical properties and moisture resistance reliability in the package. For example, the chemical equivalent ratio of the epoxy resin to the curing agent may be from 0.95 to 3, and may be specifically from 1 to 2, more specifically from 1 to 1.75. When the equivalent ratio between the epoxy resin and the curing agent is in the above range, excellent strength can be achieved after curing of the epoxy resin composition.

Inorganic filler

The inorganic filler is intended to improve the mechanical properties and low stress of the epoxy resin composition. As the inorganic filler, general inorganic fillers used in semiconductor encapsulants can be used without limitation, and are not particularly limited. Examples of the inorganic filler include fused silica, crystalline silicate, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fiber and the like . These may be used alone or in combination. Preferably, alumina alone as an inorganic filler is used to ensure relative dielectric constant and thermal conductivity; Or alumina and a mixture of at least one of fused silica and crystalline silicate. When the fused silica and the crystalline silicate are used together with alumina, the fused silica and the crystalline silicate are preferably used in an amount of 10% by weight or less of the total inorganic filler to improve the relative dielectric constant and the thermal conductivity.

The shape of alumina is not limited, but spherical alumina can improve fluidity. The average particle diameter (D50) of alumina is preferably from 1 mu m to 30 mu m, the fluidity is good, and the thermal conductivity and the relative dielectric constant are good. The alumina may be previously coated with a coupling agent, an epoxy resin or a curing agent, if necessary.

The amount of the inorganic filler to be used varies depending on required properties such as moldability, low stress, and high temperature strength. In an embodiment, the inorganic filler may be included in the epoxy resin composition for encapsulating semiconductor devices in an amount of 70 to 95 wt%, for example, 75 to 94 wt%. Within this range, there can be obtained an effect of securing the fluidity, reliability, relative dielectric constant and thermal conductivity of the composition.

Phenylphenazinium-based  compound

The phenylpazinium compounds can be prepared using commercially available products or using conventional synthetic methods known to those skilled in the art.

The phenylphenazinium-based compound may be contained in an amount of 0.1 to 3 wt%, for example, 0.1 to 1 wt% in the epoxy resin composition for sealing a semiconductor device. In the above range, the chip marking phenomenon can be solved and the adhesive force and the reliability deterioration in the semiconductor element can be prevented.

Silicone oil

The epoxy resin composition according to the present invention may contain a silicone oil together with a phenylpazinium compound insofar as the object of the invention is not impaired. Silicone oil can suppress void formation.

The silicone oil may be contained in an amount of 0.1 to 3 wt%, for example, 0.1 to 1 wt% in the epoxy resin composition for encapsulating semiconductor devices. In the above range, generation of voids can be solved.

The total amount of the phenylphenazinium compound and the silicone oil may be 0.1 wt% to 3 wt%, for example, 0.2 wt% to 1 wt% in the epoxy resin composition for sealing a semiconductor device. In the above range, generation of voids can be solved.

In addition to the above components, the epoxy resin composition according to the present invention may further include at least one of a curing accelerator, a coupling agent, a release agent, and a colorant.

Hardening accelerator

The curing accelerator is a substance that promotes the reaction between the epoxy resin and the curing agent. As the curing accelerator, for example, a tertiary amine, an organometallic compound, an organic phosphorus compound, an imidazole, and a boron compound can be used.

Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris ) Phenol and tri-2-ethylhexyl acid salt. Specific examples of the organometallic compound include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. Organic phosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphine Pin-1,4-benzoquinone adducts and the like. Imidazoles include 2-phenyl-4-methylimidazole, 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2- 4-methylimidazole, 2-heptadecylimidazole, and the like, but are not limited thereto. Specific examples of the boron compound include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroboron monoethylamine, tetrafluoro Borane triethylamine, tetrafluoroborane amine, and the like. In addition, 1,5-diazabicyclo [4.3.0] non-5-ene (1,5-diazabicyclo [4.3.0] non-5-ene: DBN), 1,8-diazabicyclo [5.4. Diazabicyclo [5.4.0] undec-7-ene: DBU) and phenol novolac resin salt. However, the present invention is not limited thereto.

As the curing accelerator, it is also possible to use an epoxy resin or a curing agent and an additive prepared by lathe.

The curing accelerator may be contained in an amount of 0.01 to 2% by weight, specifically 0.02 to 1.5% by weight in the epoxy resin composition for sealing a semiconductor device. In the above range, the curing of the epoxy resin composition is accelerated and the curing degree is also good.

Coupling agent

The coupling agent is for improving the interface strength by reacting between the epoxy resin and the inorganic filler, and may be, for example, a silane coupling agent. The silane coupling agent is not particularly limited as long as it reacts between the epoxy resin and the inorganic filler to improve the interface strength between the epoxy resin and the inorganic filler. Specific examples of the silane coupling agent include epoxy silane, aminosilane, ureidosilane, mercaptosilane, and alkylsilane. The coupling agent may be used alone or in combination.

The coupling agent may be contained in an amount of 0.01 to 5 wt%, preferably 0.05 to 3 wt% in the epoxy resin composition for sealing a semiconductor device. The strength of the cured product of the epoxy resin composition in the above range can be improved.

Release agent

As the releasing agent, at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt can be used.

The release agent may be contained in an amount of 0.1 wt% to 1 wt% in the epoxy resin composition for sealing a semiconductor device.

coloring agent

The coloring agent is for laser marking of the semiconductor element sealing material, and coloring agents well known in the art can be used and are not particularly limited. For example, the colorant may include one or more of carbon black, titanium black, titanium nitride, dicopper hydroxide phosphate, iron oxide, mica.

The colorant may be contained in an amount of 0.01 to 5% by weight, preferably 0.05 to 3% by weight, based on the epoxy resin composition for encapsulating semiconductor devices.

In addition, the epoxy resin composition of the present invention may contain an antioxidant such as Tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane; A flame retardant such as aluminum hydroxide, and the like may be further added as needed.

The epoxy resin composition is prepared by uniformly mixing the above components uniformly at a predetermined mixing ratio using a Hensel mixer or Lodige mixer, and then kneading the mixture with a roll-mill or a kneader Melting and kneading, and then cooling and pulverizing to obtain a final powder product.

The epoxy resin composition of the present invention as described above can be applied to semiconductor devices, particularly semiconductor devices mounted on a mobile display or a fingerprint sensor of an automobile. As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, a low pressure transfer molding method can be generally used. However, it is also possible to perform molding by an injection molding method or a casting method.

The semiconductor device according to the present invention can be sealed with the epoxy resin composition for sealing semiconductor devices of the present invention. For example, the semiconductor device may include a capacitive type semiconductor device for fingerprint recognition.

Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.

Specific specifications of the components used in the following examples and comparative examples are as follows.

Epoxy resin

1) Biphenyl type epoxy resin: YX-4000H (JER, epoxy equivalent: 196 g / eq)

2) phenol aralkyl type epoxy resin: NC-3000 (Japanese explosive, epoxy equivalent: 270 g / eq)

Hardener

3) Multifunctional phenol resin: MEH-7500-3S (Meiwa Chem., Hydroxyl equivalent: 95 g / eq)

4) Phenol aralkyl type phenol resin: MEH-7851-SS (Meiwa Chem., Hydroxyl equivalent: 203 g / eq)

5) Phenol novolac phenolic resin: H-4 (Meiwa Chem., Hydroxyl equivalent: 106 g / eq)

weapon Filler

6) alumina: DAB-05MS (Denka Denki, average particle diameter (D50): 7.6 mu m)

Phenylphenazinium-based  compound

7) A solution of CTK6E7420 (ChemTik, molecular weight 470-550 g / mol, 3- (diethylamino) -7 [{(4-dimethylamino) phenyl}

Silicone oil

8) FZ-3736 (DOW corning, viscosity: 2,240 cp @ 25 DEG C)

Hardening accelerator

9) 2-Phenyl-4-methylimidazole

coloring agent

10) Carbon black: Nubian Black TH-807 (Orient Chemical, pH 7.0)

Release agent

11) Carnauba wax

Coupling agent

12) KBM-403 (Shin-Etsu), an epoxy group-containing trimethoxysilane,

Example  And Comparative Example

Each of the components was weighed according to the composition (unit: parts by weight) shown in the following Table 1, and then uniformly mixed using a Henschel mixer to prepare a powdery primary composition. Thereafter, the mixture was melt-kneaded at 90 to 110 ° C using a continuous kneader, followed by cooling and pulverization, thereby preparing an epoxy resin composition for sealing semiconductor devices.

Example Comparative Example One 2 3 4 One 2 3 Epoxy resin One) 3.28 3.28 3.28 3.28 3.28 3.44 3.55 2) 3.28 3.28 3.28 3.28 3.28 3.43 3.54 Hardener 3) 1.12 1.12 1.12 1.12 1.12 1.18 1.21 4) 0.98 0.98 0.98 0.98 0.98 1.03 1.06 5) 0.71 0.71 0.71 0.71 0.71 0.74 0.76 Inorganic filler 6) 89.0 89.0 89.0 89.0 89.0 89.0 89.0 Phenylphenazinium compound 7) 0.75 0.25 0.45 0.65 0 0 0 Silicone oil 8) 0 0.50 0.30 0.10 0.75 0.30 0 Hardening accelerator 9) 0.10 0.10 0.10 0.10 0.10 0.10 0.10 coloring agent 10) 0.30 0.30 0.30 0.30 0.30 0.30 0.30 Release agent 11) 0.23 0.23 0.23 0.23 0.23 0.23 0.23 Coupling agent 12) 0.25 0.25 0.25 0.25 0.25 0.25 0.25 total 100 100 100 100 100 100 100

The physical properties of the epoxy resin compositions of the examples and comparative examples thus prepared were measured according to the following properties evaluation methods. The measurement results are shown in Table 2.

Property evaluation method

(1) Flowability (inch, spiral flow): An epoxy resin composition was injected into a mold for spiral flow measurement according to EMMI-1-66 at a molding temperature of 175 ° C and a molding pressure of 70 kgf / cm ² using a low pressure transfer molding press And the flow length (idle length) (unit: inch) was measured. The higher the measured value, the better the fluidity.

(2) Specific dielectric constant: A sample having a thickness of 3.26 mm was prepared by curing the epoxy resin composition at 175 캜 for 120 seconds and measured using an LCR meter (Agilent).

(3) Thermal conductivity (W / mK): A specimen for evaluation was prepared from an epoxy resin composition according to ASTM D5470 and measured at 25 캜.

(4) Chip marking: The epoxy resin composition was granulated by a usual method.

1, a plurality of Cu chips having a length x width x thickness (620 mu m x 360 mu m x 200 mu m) on a printed circuit board (PCB) having a length x width x thickness (240 mm x 74 mm x 220 mu m) (DAF, di attach film) having a thickness of 40 mu m with a width of 7 lines x 13 lines. Using the TOWA PMC-1040D, a semiconductor device molding compression device, The specimens were obtained by compression molding at 175 ° C for 120 seconds. It was evaluated whether or not the chip was marked with the naked eye.

Fig. 2 shows a state of ⊚ in which chip marking has not occurred at all. Referring to FIG. 2, a rectangular Cu chip is not recognized at all. FIG. 3 shows a state where a considerable number of chip markings have occurred. Referring to FIG. 3, it can be visually confirmed that the square-shaped Cu chips are separated from each other. The " DELTA " state indicates a state in which a lot of chip marking occurs, and the & cir &

(5) Fingerprint recognition: A semiconductor package was molded using an epoxy resin composition and evaluated for recognition per package.

Example Comparative Example One 2 3 4 One 2 3 Spiral flow
(inch) 62 65 65 67 65 62 58 Relative dielectric constant 8.7 8.6 8.4 8.6 8.5 8.3 8.6 Thermal conductivity (W / mK) 3.3 3.3 3.4 3.2 3.3 3.3 3.2 Chip marking ◎ ○ ○ ◎ △ × × Fingerprint recognition
Recognition rate
(%)
(Up to 5 times) 99.8 99.6 99.7 99.6 99.4 99.4 99.5 Total number of packages tested 120 120 120 120 120 120 120

As shown in Table 2, the epoxy resin composition of the present invention can prevent the chip marking phenomenon and has high fingerprint recognition power. In addition, the epoxy resin composition of the present invention was also excellent in dielectric constant and thermal conductivity.

On the other hand, in Comparative Examples 1 to 3 which did not contain the phenylphenazinium compound, chip marking phenomenon occurred a lot.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (9)

Epoxy resin; Curing agent; Inorganic fillers; And a phenylphenidinium-based compound.
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the phenylphenazinium-based compound is a compound represented by the following formula (1): < EMI ID =
&Lt; Formula 1 &gt;

(Wherein X is a monovalent anion).
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the phenylpazinium compound is contained in an amount of 0.1 to 3 wt% of the epoxy resin composition for sealing a semiconductor device.
The epoxy resin composition for sealing a semiconductor element according to claim 1, wherein the epoxy resin composition for sealing a semiconductor element further comprises a silicone oil.
5. The epoxy resin composition for sealing a semiconductor device according to claim 4, wherein the total amount of the phenylphenazinium compound and the silicone oil is 0.1 wt% to 3 wt% of the epoxy resin composition for sealing a semiconductor device.
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the inorganic filler comprises alumina.
The epoxy resin composition for sealing a semiconductor element according to claim 6, wherein the inorganic filler further comprises silica.
The epoxy resin composition for semiconductor device sealing according to claim 1,
0.5 to 20% by weight of the epoxy resin,
0.1 to 13% by weight of the curing agent,
From 70% to 95% by weight of the inorganic filler,
And 0.1 to 3% by weight of the phenylphenazinium compound.
A semiconductor device sealed with the epoxy resin composition for sealing a semiconductor element according to any one of claims 1 to 8.

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