KR20180122203A - Device and Method for Absorbing Harmonic Current by using Waste Sludge of Solar Wafer - Google Patents

Abstract

The present invention relates to a harmonic current absorbing apparatus using waste slurry of a solar wafer and a manufacturing method thereof. The harmonic current absorbing apparatus using waste slurry of a solar wafer according to an embodiment of the present invention includes an electrode part, a wire part, a ferroelectric mixture, a lower case part which receives the ferroelectric mixture inside, exposes the wire part to the outside, and maintains an electrical insulation state with the electrode part formed inside the ferroelectric mixture, and an upper plate part for maintaining an electrical insulation state with the electrode part. Therefore, the present invention can dramatically increase the moving speed of free electrons flowing in a conductor.

Description

Technical Field [0001] The present invention relates to a harmonic current absorbing device using a solar wafer sludge,

The present invention relates to an electrode unit comprising M (M? 2) conductive electrodes which are made of a highly conductive metallic material and are electrically insulated from each other and spaced apart from each other by a predetermined interval in a predetermined arrangement relationship that minimizes polarization, An electric wire portion including M wires electrically connected to each of the conductive electrodes and exposed to the outside, and an electric wire portion that is discharged in the form of sawdust or powder in at least one of cutting, polishing, and polishing processes for manufacturing a solar wafer I (i? 1) substances which are not included in the waste sludge or are insufficient in content are added to n (n? 1) substances containing silicon (Si) contained in waste sludge to obtain N 2) specified materials were mixed at predetermined mixing ratios and crushed to a size of 10 m or less. The mixed powders were agitated in a low-temperature drying furnace at 80 ° C to produce an oxidizing mixture, Cooling the mixture to a predetermined temperature, cooling the mixture to a predetermined temperature, cooling the mixed mixture to a predetermined binder according to a predetermined blending ratio, liquefying the mixture, and solidifying the electrode portion and the liquefied mixture in liquid contact with each other at room temperature to form a solidified ferroelectric mixture A lower case portion which is held in an upper portion of the lower case portion to receive a ferroelectric mixture therein and maintain the state of being electrically insulated from an electrode portion provided inside the ferroelectric mixture while exposing the electric wire portion to the outside; The present invention relates to a harmonic current absorbing device using a solar wafer sludge having an upper plate portion that is electrically insulated from an electrode portion provided therein.

Solar waste sludge is mainly composed of silicon (Si), water, and PEG, and only the oil (PEG, polyethylene glycol) mixed in it has been recovered and completely buried in the ground.

Recently, the technology to recycle waste sludge has appeared, and it is trying to use it as a fermentation agent and deoxidizer of steelworks. These products are used for raising the internal temperature of furnace or removing oxygen, but when oxidized, they can not be used as a heating material or to remove oxygen in the furnace.

Most of the waste sludge is mostly oxidized because it is stored for a long time in contact with water and left in open air. Nowadays, it is left in the open air or it is a landfill.

However, there is an advantage that it is easy to acquire many raw materials at low price easily from the viewpoint of making an electromagnetical device or a product by using oxidized minerals. The price per ton of waste sludge is 0.75% of the purchase price of materials using 99% pure silicon (metal Si). This will ensure superior price competitiveness.

There are problems such as transformer overheating and power reduction caused by harmonic current, increase of transformer loss, increase of no load loss, increase of induction of communication line, overheating of motor and generator, increase of cable loss, and power factor reduction. This problem is caused by a phenomenon that the resistance increases due to the skin effect, the current is increased, the cable is overheated to cause power loss, the AC resistance increases, and the transmission capacity decreases.

In the past, we have used Neutral Current Eliminator (NCE) or Active Filter, which uses a transistor inverter and a condenser, to solve this problem.

The above products must be applied in accordance with the capacity of the electric power consumption. Conversely, there is a problem that the power consumption is increased due to the seriousness of the reverse operation, and the operation of the load machine stops when the circuit is broken due to lightning or surge. Also, since the cost is high and it is attached to each machine device, the cost is high, and the maintenance cost is incurred yearly because the performance is deteriorated due to aging.

An object of the present invention to solve the above problems is to provide a power saving effect that reduces the effective power of the load device at all places where electricity is used irrespective of the field environment at a home, a commercial facility, Which can reduce the number of failures of the load device and prolong the lifespan of the harmonic current absorbing device using the solar wafer sludge.

The harmonic current absorbing device using the photovoltaic wafer sludge according to the present invention comprises M (M > = M) spaced apart from a predetermined interval in a predetermined arrangement relationship that is made of a highly conductive metal material and electrically insulated from each other and minimizes polarization. 2) pieces of conductive electrodes, an electric wire portion including M wires electrically connected to M conductive electrodes and exposed to the outside, and a wire portion including cutting, polishing, (N > = 1) substances containing silicon (Si) contained in waste sludge discharged in sawdust or powder form in at least one of the polishing processes, i (N > = 2) specified materials were mixed at predetermined mixing ratios, and the mixed powders were pulverized to a size within 10 [micro] m and stirred. The mixture is fired at a predetermined temperature in an electric furnace and then cooled. The resulting fired mixture is mixed with a specified binder in accordance with a predetermined blending ratio to be liquefied, and then the electrode portion and the liquefied mixture are mixed in a liquid phase And a lower case portion for holding the ferroelectric mixture in a state of being electrically insulated from the electrode portion provided inside the ferroelectric mixture while exposing the wire portion to the outside, And an upper plate that is covered on the upper portion of the lower case portion and maintains a state of being electrically insulated from the electrode portion provided in the ferroelectric mixture.

According to the present invention, in the harmonic current absorber using the solar wafer sludge, the M conductive electrodes are electrically insulated from each other and spaced apart from each other by a predetermined interval in a predetermined arrangement relationship that minimizes polarization phenomenon, And a fixing part that is disposed and fixed so as to be electrically isolated from each other.

According to the present invention, the fixing portion is provided in the lower case portion, and the M conductive electrodes can be arranged and fixed in a predetermined arrangement relationship.

According to the present invention, it is possible that the fixing portion is provided in the lower case portion, and the M conductive electrodes are arranged and fixed in a predetermined arrangement relationship before the M conductive electrodes come into close contact with the liquefied mixture.

According to the present invention, it is possible to arrange the fixing portion in the lower case portion so that the M conductive electrodes are spaced apart from the bottom surface of the lower case portion by 0.5 cm or more.

According to the present invention, it is possible that the fixing portion is disposed and fixed to the lower case portion in such a manner that the M conductive electrodes are separated from the upper plate portion by 0.5 cm or more.

According to the present invention, it is possible that the electrode portion is arranged in an arrangement relationship in which the opposing faces of the at least two conductive electrodes are minimized.

According to the present invention, the conductive electrode may include an area smaller than an area obtained by dividing the area of the bottom surface of the base lower case part by two.

According to the present invention, it is possible that the conductive electrode is formed with a hole for bringing the liquefied mixture and the highly conductive metal material into close contact without any gap.

According to the present invention, when the load capacity is less than 152 Kw, it is possible to arrange and arrange the electrode portions in such a manner that the intervals between the conductive electrodes are spaced apart by an interval of 3.1 cm or more.

According to the present invention, it is possible to arrange and arrange the electrode portions in such a manner that the spacing between the respective conductive electrodes is spaced apart by an interval of 4.2 cm or more when the load capacity is 152 Kw or more.

According to the present invention, the electrode unit may include two conductive electrodes, and the electric wire unit may include two electric wires electrically connected to the two conductive electrodes.

According to the present invention, the electrode unit may include three conductive electrodes, and the electric wire unit may include three electric wires electrically connected to the three conductive electrodes.

According to the present invention, the waste sludge may be composed of a 99% metal Si component, and may be provided with a coolant supplied to reduce frictional heat in at least one of cutting, polishing and polishing the wafer And a silicon dioxide (SiO2) component combined with the contained oxygen.

According to the present invention, the waste sludge may further comprise silicon carbide (SiC) added as an abrasive in at least one of the cutting, polishing and polishing processes of the wafer.

According to the present invention, the waste sludge comprises at least one of aluminum (Al), magnesium (Mg), calcium (Ca), potassium (K), sodium (Na) added in at least one of the steps of cutting, (AlO2), magnesium oxide (MgO), calcium oxide (CaO), superoxide < RTI ID = 0.0 > Potassium oxide (K2O), and sodium oxide (NaO2).

According to the present invention, the waste sludge may further comprise a worn iron (Fe) component in the wire used in at least one of the steps of cutting, polishing and polishing the wafer, (Fe2O3) component combined with the oxygen contained in the coolant supplied to the heat exchanger.

According to the present invention, the i materials may include zirconium (Zr), titanium (Ti), zirconium boron (ZrB2), titanium compound (TiB2), and titanium barium (BaTi).

According to the present invention, the i substances may further comprise a component which is insufficient in the amount of the components contained in the waste sludge that is less than the specified mixing ratio.

According to the present invention, the lower case portion can expose the M wires to the outside.

According to the present invention, the wire portion may include M internal wires electrically connected to the M conductive wires, and a wire connecting portion for connecting the M internal wires to the M wires exposed to the outside .

According to the present invention, the lower case part exposes the wire connection part to the outside, and the wire connection part can be electrically connected to M wires exposed to the outside.

According to the present invention, the M wires can be a wire having a length of less than 1.15 m.

According to the present invention, the mixed powder is composed of 99% of metal Si, Zr, Na, Mg, Al, K, Ca, (Ti), iron (Fe), silicon carbide (SiC), zirconium boron (ZrB2), titanium compound (TiB2) and titanium barium (BaTi) at a predetermined mixing ratio, .

According to the present invention, the mixing ratio is set to a value of 26.8 (Wt (%)) of silicon (Si), 3.20 (Wt%) of zirconium (Zr), or 2.20 (Wt% (Al), 4.60 (Wt (%)) of potassium (K), and 2.20 (Wt%) of calcium (Ca ), 1.00 (Wt (%)) titanium (Ti), 8.20 (Wt (%)) iron (Fe), 10.00 (Wt%) silicon carbide (SiC) (ZrB2), 1.20 (Wt (%)) titanium compound (TiB2), and 3.10 (Wt%) titanium barium (BaTi).

According to the present invention, the oxidation mixture can be produced by oxidizing the mixed powder for at least 45 hours through dry air at 80 ° C in a low-temperature drying furnace.

According to the present invention, the oxidation mixture comprises at least one selected from the group consisting of silicon dioxide (SiO2), zirconium oxide (ZrO2), sodium oxide (NaO2), magnesium oxide (MgO), aluminum oxide (AlO2), potassium oxide (K2O) (CaO), titanium oxide (TiO2), iron oxide (Fe2O3), silicon carbide (SiC), zirconium boron (ZrB2), titanium compounds (TiB2), and barium titanate (BaTiO3).

According to the present invention, the mixing ratio is set to a value of 26.8 (Wt%) of silicon dioxide (SiO2), 3.20 (Wt%) of zirconium oxide (ZrO2), or 2.20 (Wt% NaO2), 9.50 (Wt (%)) magnesium oxide (MgO), 26.0 (Wt (%)) aluminum oxide (AlO2), 4.60 (Wt%) potassium oxide (K2O) (SiC) of 10.00 (Wt%)), calcium oxide (CaO) of 1.00 (Wt%), titanium oxide (TiO2) of 8.20 (Wt%), iron oxide (Fe2O3) (ZrB2), 1.20 (Wt (%)) titanium compound (TiB2) and 3.10 (Wt%) barium titanate (BaTiO3) have.

According to the present invention, the firing mixture can be produced by firing the oxidation mixture at a temperature of 890 캜 to 970 캜 in an electric furnace for 10 hours or more.

According to the present invention, the binder may be composed of a sodium silicate material as an inorganic compound that liquefies a mineral powder by binding.

According to the present invention, it is possible that the blending ratio is such that the ratio of the binder to the fired mixture is within 10%.

A method for manufacturing a harmonic current absorber according to the present invention is a method for manufacturing a harmonic current absorber according to any one of claims 1 to 4, A first step of analyzing components and contents of n (n? 1) substances contained in the waste sludge in the analyzer through analysis, and a step of analyzing the contents and contents of n substances contained in the waste sludge (I > = 1) substances which are not included in the waste sludge or whose contents are less than a predetermined mixing ratio and i additional contents to be added to the waste sludge to reach the mixing ratio of the i substances A second step of adding the determined i substances to the waste sludge by the determined respective additional contents so that N (N? 2) A third step of pulverizing the N materials in the pulverizer to a size of 10 m or less and stirring the pulverized mixture to produce a mixed powder; A fifth step of firing the oxidation mixture at a temperature of 890 캜 to 970 캜 for 10 hours or more in an electric furnace to produce a fired mixture and cooling the fired mixture to a normal temperature; (M > = 2) conductive electrodes are simultaneously insulated from each other, and at the same time, the M < th > And electrically connecting the M wires electrically connected to the M conductive electrodes to the lower electrode The liquefied mixture is introduced into a lower case portion designed to have a predetermined volume capable of accommodating the liquefied mixture while being exposed to the outside of the spout so that the M conductive electrodes and the liquefied mixture are set in advance Forming a solidified ferroelectric mixture by drying at a room temperature in a state of being in liquid contact with the ferroelectric liquid, and an eighth step of housing the upper plate in a lower case portion containing the solidified ferroelectric mixture.

According to the present invention, the fourth step may further include cooling the oxidation mixture oxidized through the low temperature drying furnace through nitrogen gas.

According to the present invention, in the fourth step, it is possible to combine one or more specified substances out of the N substances included in the mixed powder with oxygen in the air to produce a stabilized oxidation mixture.

According to the present invention, in the fifth step, it is possible to impart the property of a ferroelectric having a magnetic force while maintaining the stabilized state of the oxidation mixture.

According to the present invention, a harmonic current absorbing device using a ferroelectric material absorbs harmonics by coupling and superimposing inherent physical properties and magnetic forces of each dielectric material, thereby reducing the resistance component of the line, There is an advantage that it increases rapidly.

In addition, when a ferroelectric powder prepared through an oxidation process of artificially bonding a metal mineral with oxygen in the air is used in combination with a terminal (a wire or a thin and narrow copper plate) inside the module by using a binder, The harmonic component is absorbed quickly and is rapidly discharged to the heat. Therefore, there is an advantage that the power saving effect which reduces the effective power of the load device and the voltage level become stable, and the number of failures of the load device is shortened and the service life is prolonged.

1 is a view showing a configuration of a harmonic current absorber using solar wafer sludge according to an embodiment of the present invention.
2 is a view showing a configuration of a manufacturing apparatus for manufacturing a harmonic current absorber using solar wafer sludge according to an embodiment of the present invention.
3 is an exemplary view of a harmonic current absorber using a photovoltaic wafer sludge according to an embodiment of the present invention.
4 is a view illustrating a process of manufacturing a harmonic current absorber using solar wafer sludge according to an embodiment of the present invention.
FIGS. 5 to 8 are tables showing change rates of harmonics before and after the installation of the harmonic current absorber using the photovoltaic wafer sludge according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be understood, however, that the drawings and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention, and are not to be construed as limiting the present invention.

In other words, the following embodiments correspond to the preferred embodiment of the preferred embodiment of the present invention. In the following embodiments, a specific configuration (or step) is omitted, or a specific configuration (or step) (Or steps), or an embodiment that incorporates functions implemented in more than one configuration (or step) into any one configuration (or step), a particular configuration (or step) And the like are replaced by the operational scope of the present invention, and the like are all within the scope of the present invention unless otherwise mentioned in the following examples. Therefore, it should be clearly stated that various embodiments corresponding to subsets or combinations based on the following embodiments can be subdivided based on the filing date of the present invention.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. The terms used below are defined in consideration of the functions of the present invention, and may be changed according to the intention of the user, the intention or the custom of the operator. Therefore, the definition should be based on the contents throughout the present invention.

As a result, the technical idea of the present invention is determined by the claims, and the following embodiments are merely means for effectively explaining the technical idea of the present invention to a person having ordinary skill in the art to which the present invention belongs Only.

1 is a view showing a configuration of a harmonic current absorber using solar wafer sludge according to an embodiment of the present invention.

In more detail, FIG. 1 absorbs and removes harmonic currents by coupling and superimposing induction magnetic forces possessed by one or more dielectric materials, thereby reducing the resistance component of the line, thereby rapidly increasing the moving speed of free electrons flowing through the conductor The problem is solved by the increase of the no load loss caused by the harmonic current, the increase of the inductance of the control line, the overheating of the generator, the increase of the cable loss, and the power factor decrease due to the stabilization of the voltage while the voltage is stabilized. 1 is a view showing a configuration of a harmonic current absorbing device using a solar wafer sludge for increasing the service life of a mechanical device. As shown in FIG. 1 and / or modified in accordance with the present invention, And the structure of the harmonic current absorbing device using the above-mentioned photovoltaic wafer sludge It is to be understood that the present invention is not limited to the above-described embodiments, and that various changes and modifications will be apparent to those skilled in the art.

Referring to FIG. 1, the harmonic current absorber 100 using the photovoltaic wafer sludge shown includes M (M? 2) conductive electrodes composed of a highly conductive metal material to reduce electrical insulation and polarization phenomenon An electrode unit 105, a wire unit 110 including M wires connected to the M conductive electrodes,

The present invention relates to a method for manufacturing a solar wafer, comprising the steps of: mixing and pulverizing a material contained in waste sludge discharged in sawdust or powder form in at least one of cutting, polishing, and polishing processes to produce a solar wafer, A solidified ferroelectric mixture 115 formed through liquefaction and normal-temperature drying processes, a lower case part 120 which is electrically insulated from the electrode part 105 provided inside the ferroelectric mixture 115, A top plate part 125 which is covered on the upper part of the lower case part 120 and a fixing part 125 for electrically isolating the M conductive electrodes from each other and insulated from the lower case part 120, (130).

The electrode unit 105 includes M (M? 2) conductive electrodes which are made of a highly conductive metal material and are electrically insulated from each other and spaced apart from each other by a predetermined interval in a predetermined arrangement relationship that minimizes polarization .

According to the method of the present invention, it is preferable that the electrode unit 105 is disposed in a positional relationship in which the opposing faces of the at least two conductive electrodes are minimized.

For example, when two conductive electrodes are arranged facing each other in the direction of the surface (for example, the electrodes are arranged so as to face each other in the area direction) or '||' , And it is preferable to dispose the two electrodes in the thickness direction as '- -'.

According to the method of the present invention, the conductive electrode may be configured to include an area smaller than an area obtained by dividing the area of the bottom surface of the lower case part 120 by two. For example, in the case of a single-phase, since two electrodes are arranged side by side like '- -', it is natural that the area of the conductive electrode 1 should be smaller than the area of the bottom surface of the lower case divided by two.

According to the method of the present invention, the conductive electrode can be configured to form a hole for bringing the liquefied mixture and the highly conductive metal material into close contact without any gap.

In addition, according to the method of the present invention, the electrode unit 105 can be arranged and fixed in such a disposition that the intervals between the conductive electrodes are spaced apart by an interval of 3.1 cm or more when the load capacity is less than 152 Kw, It is possible to arrange and arrange the conductive electrodes at intervals of 4.2 cm or more apart from each other.

The wire unit 110 may include M wires electrically connected to M conductive electrodes included in the electrode unit 105 and exposed to the outside.

According to an embodiment of the present invention, the wire portion 110 includes M internal wires electrically connected to M conductive wires, and wire connecting portions (not shown) for connecting the M internal wires to M wires exposed to the outside Not shown separately).

For example, the wire section 110 may directly connect M wires to the outside, but may be connected to an external wire through a wire connection part (for example, an electrical connection port).

In addition, when the wire connecting part is exposed to the outside through the lower case part 120, the wire connecting part can be electrically connected to M wires exposed to the outside.

In addition, according to the method of the present invention, when the electrode portion 105 includes two conductive electrodes, the wire portion 110 includes two wires electrically connected to the two conductive electrodes Lt; / RTI >

In the case of such a single phase, it is preferable to arrange two electrodes in the thickness direction as '- -'.

According to another embodiment of the present invention, when the electrode unit 105 includes three conductive electrodes, the electric wire unit 110 includes three electric wires electrically connected to the three conductive electrodes. .

In the case of the three phases, it is possible to arrange three electrodes in the thickness direction as '- - -' or as crosses as '_-_'.

According to the present invention, it is preferable that the M wires provided in the wire section 110 are wires having a length of less than 1.15 m.

The ferroelectric mixture 115 is (Si) contained in waste sludge discharged in sawdust or powder form in at least one of the cutting, polishing and polishing processes for producing solar wafers, (N > = 2) specified materials are mixed at predetermined mixing ratios by adding i (i > = 1) substances which are not contained in the waste sludge or are insufficient in the amount of the waste sludge, The mixed powder is oxidized in a low-temperature drying furnace at 80 ° C to produce an oxidizing mixture, fired at a preset temperature in an electric furnace, cooled, and cooled. The resulting fired mixture is mixed with a specified binder in accordance with a predetermined blending ratio and liquefied. The liquefied mixture may be solidified by drying at room temperature in a liquid-tight state.

According to an embodiment of the present invention, the waste sludge comprises 99% of a metal Si component and is contained in a coolant supplied to reduce frictional heat in at least one of the cutting, polishing and polishing processes of the wafer (SiO2) component combined with oxygen.

The waste sludge may further comprise silicon carbide (SiC) added as an abrasive in at least one of the cutting, polishing and polishing processes of the wafer.

The waste sludge may be at least one of aluminum (Al), magnesium (Mg), calcium (Ca), potassium (K) and sodium (Na) added in at least one of the steps of cutting, (AlO2), magnesium oxide (MgO), calcium oxide (CaO), potassium oxide (K2O), sodium superoxide (Na2O), and the like contained in the coolant supplied to reduce frictional heat in each process. RTI ID = 0.0 > (NaO2). ≪ / RTI >

In addition, the waste sludge further comprises a worn iron (Fe) component in the wire used in at least one of the steps of cutting, polishing and polishing the wafer, wherein oxygen contained in the coolant supplied to reduce frictional heat (Fe2O3) component combined with the iron oxide (Fe2O3) component.

According to the present invention, the i materials may include zirconium (Zr), titanium (Ti), zirconium boron (ZrB2), titanium compounds (TiB2), and titanium barium (BaTi).

Here, the i substances may further include a component of the waste sludge, which is insufficient in the content of the waste sludge.

According to the method of the present invention, the mixed powder may contain at least one selected from the group consisting of 99% of metal Si, zirconium (Zr), sodium (Na), magnesium (Mg), aluminum (Al), potassium (K) (Ti), titanium (Ti), iron (Fe), silicon carbide (SiC), boron zirconium (ZrB2), titanium compound (TiB2) and titanium barium (BaTi) It is preferably produced by pulverizing and stirring.

Herein, the mixing ratio is set to 26.8 (Wt (%)) of silicon (Si), 3.20 (Wt (%)) of zirconium (Zr), 2.20 (Mg), 26.0 (Wt (%)) aluminum (Al), 4.60 (Wt (%)) potassium (K), 2.20 (Wt% (SiC), 4.00 (Wt (%)) of boronized zirconium (Wt (%)) of titanium (Ti), 8.20 (ZrB2), 1.20 (Wt (%)) titanium compound (TiB2), and 3.10 (Wt%) titanium barium (BaTi).

According to the method of the present invention, the oxidation mixture is preferably produced by oxidizing the mixed powder for at least 45 hours through dry air at 80 ° C in a low-temperature drying furnace.

The oxidation mixture may be at least one selected from the group consisting of silicon dioxide (SiO2), zirconium oxide (ZrO2), sodium oxide (NaO2), magnesium oxide (MgO), aluminum oxide (AlO2), potassium oxide (K2O) , Titanium oxide (TiO2), iron oxide (Fe2O3), silicon carbide (SiC), zirconium boride (ZrB2), titanium compound (TiB2) and barium titanate (BaTiO3).

According to another embodiment of the present invention, the mixing ratio is selected from the group consisting of 26.8 (Wt%) silicon dioxide (SiO2), 3.20 (Wt%) zirconium oxide (ZrO2) (NaO2), 9.50 (Wt (%)) magnesium oxide (MgO), 26.0 (Wt%) aluminum oxide (AlO2), 4.60 (Wt%) potassium oxide (K2O) , 2.20 (Wt%) of calcium oxide (CaO), 1.00 (Wt (%)) of titanium oxide (TiO2), 8.20 (Wt%) of iron oxide (Fe2O3) (ZrB2), 1.20 (Wt (%)) titanium compound (TiB2), and 3.10 (Wt%) barium titanate (BaTiO3) .

According to the method of the present invention, it is preferable that the firing mixture is produced by firing the oxidation mixture at a temperature of 890 캜 to 970 캜 in an electric furnace for 10 hours or more.

According to the method of the present invention, it is preferable that the binder to be blended with the fired mixture at a specified blend ratio comprises a sodium silicate material as an inorganic compound that liquefies a mineral powder by binding.

Here, it is preferable that the ratio of the binder to the fired mixture is within 10%.

The lower case part 120 accommodates the ferroelectric mixture 115 and exposes the wire part 110 to the outside to electrically insulate the electrode part 105 provided in the ferroelectric mixture 115 It is possible to maintain the state in which the data is stored.

According to the method of the present invention, the lower case 120 may expose the M wires to the outside. For example, it is possible that the M wires are directly connected to the electrodes without a wire connection.

The upper plate part 125 is covered on the upper part of the lower case part 120 and may be maintained in a state of being electrically insulated from the electrode part 105 provided in the ferroelectric mixture 115.

The fixing portions 130 are spaced apart from each other by a predetermined distance in a predetermined arrangement relationship in which the M conductive electrodes are electrically insulated from each other and minimize polarization, and are arranged and fixed so as to be electrically insulated from the lower case portion 120 can do.

According to the embodiment of the present invention, the fixing portion 130 is provided in the lower case portion 120, and the M conductive electrodes can be arranged and fixed in a predetermined arrangement relationship.

According to another embodiment of the present invention, the fixing portion 130 is provided in the lower case portion 130 so that the M conductive electrodes are arranged in a predetermined arrangement before the M conductive electrodes are brought into close contact with the liquefied mixture It is possible to arrange them in relation to each other.

According to still another embodiment of the present invention, the fixing portion 130 is provided in the lower case portion 130 so that the M conductive electrodes are separated from the bottom surface of the lower case portion 130 by 0.5 cm or more It is possible to arrange them in a layout relation.

According to still another embodiment of the present invention, the fixing portion 130 is provided in the lower case portion 130 so that the M conductive electrodes are arranged in a positional relationship that is spaced apart from the upper plate portion 125 by 0.5 cm or more It is possible to fix it.

2 is a view showing a configuration of a manufacturing apparatus for manufacturing a harmonic current absorber using solar wafer sludge according to an embodiment of the present invention.

2 shows a construction of a manufacturing apparatus 200 for manufacturing a harmonic current absorbing device using the photovoltaic wafer sludge shown in FIG. 1, It is to be understood that the invention is not limited thereto and that various changes and modifications will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical features are not limited only by the method shown in FIG. 2

Referring to FIG. 2, the manufacturing apparatus 200 using the photovoltaic wafer waste sludge shown in FIG. 2 can analyze the composition of n (n? 1) substances contained in the waste sludge through x- A crusher 210 for crushing N (N > = 2) substances to a size of 10 m or less while stirring to produce a mixed powder; An electric furnace 220 for burning the oxidation mixture to produce a fired mixture and cooling the fired mixture to a normal temperature, and a fired mixture of the fired mixture and a specified binder according to a predetermined blending ratio and stirring (M > = 2) conductive electrodes are placed and fixed in a predetermined arrangement relationship, and the liquefied mixture is charged to form a mixture of M conductive electrodes and the liquefied mixture And a lower case part 230 for forming a solidified ferroelectric mixture by drying at room temperature in a state in which water is in liquid contact with a predetermined thickness.

The analyzer 205 analyzes the waste sludge discharged in the form of sawdust or powder in at least one of the cutting, polishing and polishing processes for manufacturing a solar wafer, The composition and content of n (n ≥ 1) substances included can be analyzed.

In addition, the analyzer 205 may calculate the concentration of i (i > = 1) substances contained in the waste sludge or less than a predetermined mixing ratio based on the contents and contents of the n substances contained in the waste sludge, I < / RTI > materials to be added to the waste sludge to reach the mixing ratio.

The pulverizer 210 determines i additional contents to be added to the waste sludge via the analyzer 205 and adds the determined i materials to the waste sludge by the determined additional contents to obtain N ) Of the specified materials are mixed at predetermined mixing ratios, the N materials may be pulverized to a size within 10 m and stirred to produce mixed powder.

When the mixed powder is generated through the pulverizer 210, the low-temperature drying furnace 215 may oxidize the mixed powder for at least 45 hours through dry air at 80 ° C to produce an oxidizing mixture.

According to the present invention, the low-temperature drying furnace 215 can cool the oxidized oxidation mixture through nitrogen gas.

According to the method of the present invention, the low-temperature drying furnace 215 can combine at least one of the N materials included in the mixed powder with oxygen in the air to produce a stabilized oxidation mixture.

When the oxidizing mixture is generated through the low-temperature drying furnace 215, the oxidizing mixture is fired at a temperature of 890 ° C. to 970 ° C. for 10 hours or more to produce a fired mixture and cooled to room temperature have.

According to the method of the present invention, it is possible to impart the property of a ferroelectric having a magnetic force while maintaining the stabilized state of the oxidation mixture.

The stirrer 225 may generate a sintered mixture through the electric furnace 220, mix the sintered mixture cooled to room temperature and the designated binder according to a predetermined mixing ratio, and stir to produce a liquefied mixture.

The lower case part 230 is disposed and fixed in a predetermined arrangement relationship in which the M conductive electrodes are insulated from each other while being insulated from the lower case part 230. M wires electrically connected to the M conductive electrodes are connected to the lower case part 230, And the liquefied mixture is introduced through the agitator 225. When the liquefied mixture is introduced through the agitator 225, the M conductive electrodes and the liquefied natural gas can be designed to have a predetermined volume, The solidified ferroelectric mixture can be produced by drying at room temperature in a state in which the resulting mixture is in liquid contact with a predetermined thickness.

In addition, the lower case part 230 may house the upper plate after the solidified ferroelectric mixture is received.

3 is an exemplary view of a harmonic current absorber using solar wafer sludge according to an embodiment of the present invention.

3 shows a simple example of a harmonic current absorber 100 using the photovoltaic wafer sludge shown in FIG. 1. The harmonic current absorber 100 of FIG. It is possible to refer to and modify various aspects of the configuration of the harmonic current absorber 100 using the photovoltaic wafer sludge as described above with reference to FIG. And the technical features thereof are not limited only by the method shown in FIG. 3

Referring to FIG. 3, the fixing unit 130 may include a screw 130-2 and a holder 130-1. However, the fixing unit 130 is not limited thereto, Can be implemented.

4 is a view showing a process of manufacturing a harmonic current absorber using solar wafer sludge according to an embodiment of the present invention.

4 shows a process of fabricating a harmonic current absorber using solar wafer sludge using the manufacturing apparatus 200 shown in FIG. 2. Referring to FIG. 4, The present invention can be applied to various methods for manufacturing a harmonic current absorber using the photovoltaic wafer sludge by referring to and / or modifying FIG. 4. However, And the technical features thereof are not limited only by the method shown in FIG.

Referring to FIG. 4, the process of fabricating the harmonic current absorber using the photovoltaic wafer sludge shown in FIG. 4 is performed by cutting the photovoltaic wafer in the analyzer 205 provided in the manufacturing apparatus 200, (N > = 1) substances contained in the waste sludge through x-ray analysis on waste sludge discharged in sawdust or powder form in at least one of the polishing, (400).

Then, the analyzer 205 analyzes the components of i (i > = 1) substances contained in the waste sludge or below a predetermined mixing ratio based on the contents and contents of n substances contained in the waste sludge, I < / RTI > additional content to be added to the waste sludge to reach the mixing ratio of the i materials is determined (405).

The pulverizer 210 provided in the manufacturing apparatus 200 is connected to the analyzer 205 through the analyzer 205 and includes a component of i (i? 1) substances not included in the waste sludge or less than a predetermined mixing ratio, If i additional contents to be added to the waste sludge are determined to reach the mixing ratio, the determined i substances are added to the waste sludge that is input to the mill 210, (N > = 2) specified materials are mixed at predetermined blending ratios (410).

Then, the pulverizer 210 of the manufacturing apparatus 200 mills the N materials that have been confirmed to be injected into a size of 10 μm or less while stirring to produce a mixed powder (step 415).

When the mixed powder is generated through the crusher 210, the low temperature drying furnace 215 of the manufacturing apparatus 200 oxidizes the mixed powder for at least 45 hours through dry air at 80 ° C to produce an oxidizing mixture 420 ).

Then, the low temperature drying furnace 215 cools the oxidized oxidation mixture through the nitrogen gas (425).

When the oxidation mixture is generated through the low temperature drying furnace 215, the furnace 220 of the manufacturing apparatus 200 is fired at a temperature of 890 to 970 캜 for 10 hours or more to produce a fired mixture (430), and the resulting fired mixture is cooled to room temperature (435).

When the fired mixture is produced through the electric furnace 220 and is cooled to room temperature, the agitator 225 of the manufacturing apparatus 200 mixes the cooled fired mixture and the specified binder according to a predetermined mixing ratio (step 440) .

The stirrer 225 stirs the plastic mixture and the binder, which are blended according to the predetermined blending ratio, to produce a liquefied mixture (445).

The lower case part 230 of the manufacturing apparatus 200 is in liquid contact with the M conductive electrodes and the liquefied mixture in a predetermined thickness when the liquefied mixture is introduced through the agitator 225, .

Here, the M conductive electrodes are mutually insulated through the lower case part 230 and are arranged and fixed in a predetermined arrangement relation to be insulated from the lower case part 230, and M wires (not shown) electrically connected to the M conductive electrodes To the outside of the lower case portion while having a predetermined volume capable of accommodating the liquefied mixture.

Thereafter, the lower case part 230 is dried at room temperature in a liquid state close to the predetermined thickness to form a solidified ferroelectric mixture (455). After the solidified ferroelectric mixture is received, the upper plate part is housed in the present invention The process of manufacturing the harmonic current absorber 100 using the photovoltaic wafer sludge according to the present invention is finished (460).

FIG. 5 is a table showing the rate of change of harmonics before and after the installation of the harmonic current absorber 100 using the sunlight disposal sludge according to the present invention in a large electric furnace factory.

5, the fundamental function of the harmonic current absorber 100 using the sunlight sludge according to the present invention is to maintain electricity saving and voltage stability. In the harmonic current absorber 100 using the sunlight sludge, The third, fifth, and seventh harmonics are decreased.

3 harmonics are -23.2%, 5 trillion waves are -3.2%, and the seventh harmonic is -27.6%. Referring to FIG. 5, it can be seen that the cumulative amount of electricity is -18.7% less than before installation . In the case of the monthly electricity bill of 10 million won, the electricity bill of 1,800,000 won per month can be saved.

The solidified ferroelectric mixture 120 is subjected to oxidation treatment through a low temperature drying furnace 215 and firing at 890 ° C to 970 ° C. Through this process, the minerals are converted into ferroelectric materials that maintain their stability as oxidized compounds and have magnetic properties.

The waste sludge and the additional minerals according to the present invention are as follows, and the composition ratio thereof can be changed somewhat depending on the manufacturing method and the capacity of the module.

Since aluminum oxide, silicon dioxide, and silicon carbide have a high thermal conductivity in addition to their inherent characteristics, they diffuse heat generated by harmonic current into the solidified ferroelectric mixture 120 and play a large role in discharging the ferroelectric mixture 120 to the outside. It is relatively higher than other substances.

NO Element Wt (%) NO Element Wt (%) One Zirconium oxide (ZrO2) 3.20 8 Titanium oxide (TiO2) 1.00 2 Sodium superoxide (NaO2) 2.20 9 Iron oxide (Fe2O3) 8.20 3 Magnesium oxide (MgO) 9.50 10 Silicon carbide (SiC) 10.00 4 Aluminum oxide (AlO2) 26.0 11 Zirconium boron (ZrB2) 4.00 5 Silicon dioxide (SiO2) 26.8 12 Titanium compound (TiB2) 1.20 6 Potassium oxide (K2O) 4.60 13 Barium titanate (BaTiO3) 3.10 7 Calcium oxide (CaO) 2.20

First, the harmonic current absorber 100 using the sunlight sludge according to the embodiment of the present invention can be used regardless of the frequency band if the voltage is 1,000 volts or less. The energy density differs depending on the volume of the solidified ferroelectric mixture 120, but this is also not a big problem.

Usually there are 5kw, 10kw, 30kw models by capacity. The size and energy density of each model are as follows.

Volume Size (mm) Energy density (Wh / L) Weight (Kg) 5 Kw 230 (D) x 155 (W) x 100 (H) 5,330 1.7 10 Kw 270 (D) x 203 (W) x 110 (H) 12,606 3.35 30 Kw 285 (D) x 205 (W) x 122 (H) 21,325 4.16

If the capacity of the mechanical device is equal to or greater than the capacity of the model, it is possible to accommodate the capacity by adding one higher-order model to the model one by one.

Also, when multiple models are used in combination, it is much more effective at removing harmonic currents than using one model. Therefore, industrial plants mainly use several models (5Kw X 2, 10Kw X 1, 30Kw X 1) connected in parallel.

The harmonic current absorber 100 using the sunlight disposal sludge according to the present invention can be connected to a power source connected to the load side of the user through the R type terminal and the incoming power source can be connected to the harmonic current absorber 100 using the sunlight disposal sludge And is transmitted to the ferroelectric mixture 120 through the pair of electrodes through the wire portion 110 of the ferroelectric material 100. The ferroelectric mixture 120 may be activated for at least three hours after the application of power, so that the inherent physical properties of the dielectric material can be activated while the internal temperature rises.

100: Harmonic current absorbing device 105: Electrode part
110: wire part 115: ferroelectric mixture
120: lower case part 125: upper plate part
130:
200: Manufacturing apparatus 205: Analyzer
210: Grinder 215: Low temperature drying furnace
220: electric furnace 225: stirrer
230: Lower case part

Claims (35)

(M > = 2) conductive electrodes spaced apart from each other by a predetermined interval in a predetermined arrangement relationship that is made of a highly conductive metal material and electrically insulated from each other and minimized polarization;
A wire portion including M wires electrically connected to M conductive wires and exposed to the outside;
(Si) contained in waste sludge discharged in sawdust or powder form in at least one of the cutting, polishing and polishing processes for producing solar wafers, (N > = 2) specified materials are mixed at predetermined mixing ratios by adding i (i > = 1) substances which are not contained in the waste sludge or are insufficient in the amount of the waste sludge, The mixed powder is oxidized in a low-temperature drying furnace at 80 ° C to produce an oxidizing mixture, fired at a preset temperature in an electric furnace, cooled, and cooled. The resulting fired mixture is mixed with a specified binder in accordance with a predetermined blending ratio and liquefied. Solidifying the solidified ferroelectric mixture by liquefying the liquefied mixture at room temperature;
A lower case part that houses the ferroelectric mixture therein and maintains a state of being electrically insulated from an electrode part provided inside the ferroelectric mixture while exposing the electric wire part to the outside; And
And a top plate covering an upper portion of the lower case portion and maintaining a state of being electrically insulated from an electrode portion provided inside the ferroelectric mixture.
The method according to claim 1,
Further comprising a fixing unit for electrically isolating the M conductive electrodes from each other and spaced apart from each other by a predetermined distance in a predetermined arrangement relationship that minimizes the polarization phenomenon while being electrically insulated from the lower case unit A harmonic current absorber using solar wafer sludge as a feature.
The apparatus according to claim 2,
And the M conductive electrodes provided in the lower case part are arranged and fixed in a predetermined arrangement relationship.
The apparatus according to claim 2,
Wherein the M conductive electrodes are arranged and fixed in a predetermined arrangement relationship before the M conductive electrodes are brought into close contact with the liquefied mixture.
The apparatus according to claim 2,
And the M conductive electrodes are provided in the lower case part so as to be arranged and fixed so as to be spaced apart from the bottom surface of the lower case part by 0.5 cm or more.
The apparatus according to claim 2,
And the M conductive electrodes are provided in the lower case part so as to be arranged and fixed in such a manner that the M conductive electrodes are separated from the upper plate part by 0.5 cm or more.
The plasma display apparatus according to claim 1,
Wherein the at least two conductive electrodes are arranged in an arrangement relationship in which the opposing surfaces of the at least two conductive electrodes are minimized.
2. The electrochemical device according to claim 1,
And an area smaller than an area obtained by dividing the area of the bottom surface of the lower case part by 2. The harmonic current absorbing device according to claim 1,
2. The electrochemical device according to claim 1,
Wherein a hole is formed to closely contact the liquefied mixture with a highly conductive metal material without voids.
The plasma display apparatus according to claim 1,
And when the load capacity is less than 152 Kw, the spacing between the conductive electrodes is spaced apart by an interval of 3.1 cm or more.
The plasma display apparatus according to claim 1,
And when the load capacity is equal to or more than 152 Kw, the spacing between the conductive electrodes is spaced apart by an interval of 4.2 cm or more.
The method according to claim 1,
Wherein the electrode portion includes two conductive electrodes,
Wherein the wire section comprises two wires electrically connected to the two conductive electrodes. ≪ RTI ID = 0.0 > 8. ≪ / RTI >
The method according to claim 1,
Wherein the electrode portion includes three conductive electrodes,
Wherein the wire section comprises three wires electrically connected to the three conductive electrodes. ≪ RTI ID = 0.0 > 8. ≪ / RTI >
The method according to claim 1,
And a silicon (metal Si) component of 99%
And a silicon dioxide (SiO2) component combined with oxygen contained in a coolant supplied to reduce frictional heat in at least one of the steps of cutting, polishing and polishing the wafer. Current absorption device.
15. The method according to claim 1 or 14,
Further comprising a silicon carbide (SiC) added as an abrasive in at least one of a cutting, polishing and polishing process of the wafer.
15. The method according to claim 1 or 14,
Further comprising one or more components of aluminum (Al), magnesium (Mg), calcium (Ca), potassium (K) and sodium (Na) added in at least one of the steps of cutting, polishing and polishing the wafer,
At least one of aluminum oxide (AlO2), magnesium oxide (MgO), calcium oxide (CaO), potassium oxide (K2O), and sodium oxide (NaO2) combined with oxygen contained in the coolant supplied to reduce frictional heat in each process And further comprising a part of oxidized components. ≪ Desc / Clms Page number 24 >
15. The method according to claim 1 or 14,
Further comprising a worn iron (Fe) component in the wire used in at least one of the step of cutting, polishing and polishing the wafer,
Further comprising a part of iron oxide (Fe2O3) components combined with oxygen contained in the coolant supplied to reduce frictional heat in each step. ≪ Desc / Clms Page number 13 >
The method of claim 1,
A harmonic current absorber using solar wafer sludge, comprising Zr, Ti, ZrB2, TiB2, and BaTi.
The method of claim 1,
Further comprising a component of the waste sludge that is insufficient in a content lower than a specified mixing ratio among components included in the waste sludge.
[3] The apparatus of claim 1,
And the M wires are exposed to the outside. ≪ RTI ID = 0.0 > [10] < / RTI >

The electronic apparatus according to claim 1,
M internal wires electrically connected to each of the M conductive electrodes,
And a wire connection part for connecting the M inner wires to M wires exposed to the outside. ≪ RTI ID = 0.0 > 8. ≪ / RTI >
22. The method of claim 21,
The lower case part exposes the wire connecting part to the outside,
Wherein the wire connecting portion is electrically connected to M wires exposed to the outside.
23. The method of claim 1 or 22,
Wherein the wire is a wire having a length of less than 1.15 m.
The method according to claim 1,
(Si), zirconium (Zr), sodium (Na), magnesium (Mg), aluminum (Al), potassium (K), calcium (Ca), titanium (Ti) (SiC), zirconium boron (ZrB2), titanium compound (TiB2), and titanium barium (BaTi) at a predetermined mixing ratio, and pulverizing and agitating the mixture to a size of 10 m or less. Harmonic Current Absorption Device Using Waste Sludge.
The method according to claim 1 or 24,
26.8 (Wt (%)) silicon (metal Si),
3.20 (Wt (%)) zirconium (Zr),
2.20 (Wt (%)) of sodium (Na),
9.50 (Wt (%)) of magnesium (Mg),
26.0 (Wt (%)) aluminum (Al),
4.60 (Wt (%)) of potassium (K),
2.20 (Wt (%)) of calcium (Ca),
1.00 (Wt (%)) of titanium (Ti),
8.20 (Wt (%)) of iron (Fe),
10.00 (Wt (%)) silicon carbide (SiC),
4.00 (Wt (%)) of boron zirconium (ZrB2),
1.20 (Wt (%)) of the titanium compound (TiB2),
3.10 (Wt (%)) of titanium barium (BaTi).
The method of claim 1, wherein the oxidation mixture comprises
Wherein the mixed powder is oxidized for at least 45 hours through dry air at 80 ° C in a low temperature drying furnace.
27. The method of claim 1 or 26,
(SiO2), zirconium oxide (ZrO2), sodium oxide (NaO2), magnesium oxide (MgO), aluminum oxide (AlO2), potassium oxide (K2O), calcium oxide (CaO) A harmonic current absorber using solar wafer sludge, comprising iron oxide (Fe2O3), silicon carbide (SiC), zirconium boron (ZrB2), titanium compound (TiB2) and barium titanate (BaTiO3).
The method according to claim 1 or 24,
26.8 (Wt (%)) of silicon dioxide (SiO2),
3.20 (Wt (%)) zirconium oxide (ZrO2),
2.20 (Wt (%)) of sodium monoxide (NaO2),
9.50 (Wt (%)) of magnesium oxide (MgO),
26.0 (Wt (%)) aluminum oxide (AlO2),
4.60 (Wt (%)) potassium oxide (K2O),
2.20 (Wt (%)) of calcium oxide (CaO),
1.00 (Wt (%)) of titanium oxide (TiO2),
8.20 (Wt (%)) iron oxide (Fe2O3),
10.00 (Wt (%)) silicon carbide (SiC),
4.00 (Wt (%)) of boron zirconium (ZrB2),
1.20 (Wt (%)) of the titanium compound (TiB2),
3.10 (Wt (%)) of barium titanate (BaTiO3).
The method according to claim 1,
Wherein the oxidation mixture is produced by firing the oxidation mixture at a temperature of 890 캜 to 970 캜 in an electric furnace for 10 hours or more.
The image forming apparatus according to claim 1,
A harmonic current absorber using solar wafer sludge as claimed in claim 1, wherein the inorganic sludge comprises sodium silicates.
The method according to claim 1,
Wherein the ratio of the binder to the sintered mixture is within 10%.
A method of manufacturing a harmonic current absorbing device,
Ray analysis of waste sludge discharged in the form of sawdust or powder in at least one of the cutting, polishing and polishing processes for producing solar wafers, a first step of analyzing the components and contents of the n < th >
(I > = 1) substances contained in the waste sludge or less than a preset mixing ratio based on the contents and contents of the n substances contained in the waste sludge in the analyzer, A second step of determining i additional contents to be added to the waste sludge to reach the mixing ratio;
Adding the determined i substances to the waste sludge by the determined additional amount to add a mixture of N (N? 2) specified materials at a predetermined mixing ratio to the pulverizer, By weight, and the mixture is stirred to produce a mixed powder;
A fourth step of oxidizing the mixed powder for at least 45 hours through dry air at 80 ° C in a low-temperature drying furnace to produce an oxidizing mixture;
A fifth step of calcining the oxidation mixture at a temperature of 890 캜 to 970 캜 in an electric furnace for at least 10 hours to produce a sintered mixture and cooling to room temperature;
Mixing the fired mixture cooled to room temperature after the firing with a specified binder according to a predetermined mixing ratio, and stirring the mixture through a stirrer to produce a liquefied mixture;
(M > = 2) conductive electrodes are mutually insulated and arranged and fixed in a predetermined arrangement relation to be insulated from the lower case part, and M wires electrically connected to the M conductive electrodes are exposed to the outside of the lower case part, The liquefied mixture is injected into a lower case portion designed to have a predetermined volume capable of accommodating the liquefied mixture, and the M conductive electrodes and the liquefied mixture are brought into close contact with each other in a liquid state at a predetermined thickness in the lower case portion A step of drying at room temperature to produce a solidified ferroelectric mixture;
And a step of housing the upper plate portion in a lower case portion accommodating the solidified ferroelectric mixture.
33. The method as claimed in claim 32,
And cooling the oxidized mixture oxidized through the low temperature drying furnace through nitrogen gas.
33. The method as claimed in claim 32,
Wherein at least one of the N materials included in the mixed powder is combined with oxygen in the air to generate a stabilized oxidation mixture.
33. The method as claimed in claim 32,
Wherein a characteristic of a ferroelectric having a magnetic force is given while maintaining the stabilized state of the oxidation mixture.

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