KR20180116819A - The method of nitroride deposition on graphite boat in solar pecvd process - Google Patents

The method of nitroride deposition on graphite boat in solar pecvd process Download PDF

Info

Publication number
KR20180116819A
KR20180116819A KR1020170049559A KR20170049559A KR20180116819A KR 20180116819 A KR20180116819 A KR 20180116819A KR 1020170049559 A KR1020170049559 A KR 1020170049559A KR 20170049559 A KR20170049559 A KR 20170049559A KR 20180116819 A KR20180116819 A KR 20180116819A
Authority
KR
South Korea
Prior art keywords
graphite boat
deposition
carbon
tube
nitroride
Prior art date
Application number
KR1020170049559A
Other languages
Korean (ko)
Inventor
박청재
Original Assignee
마스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마스 주식회사 filed Critical 마스 주식회사
Priority to KR1020170049559A priority Critical patent/KR20180116819A/en
Publication of KR20180116819A publication Critical patent/KR20180116819A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention relates to a method for depositing nitride on a graphite boat for use in the plasma chemical vapor deposition process of a solar wafer. A graphite boat is put into a tube. C (carbon) is injected into the tube. Nitride is deposed on the graphite boat. It is possible to increase productivity.

Description

태양광 플라스마 화학 증착 공정 중 그라파이트보트에 질화물을 증착하는 방법{THE METHOD OF NITRORIDE DEPOSITION ON GRAPHITE BOAT IN SOLAR PECVD PROCESS}FIELD OF THE INVENTION [0001] The present invention relates to a method for depositing nitride on a graphite boat during photovoltaic plasma chemical vapor deposition processes,

본 발명은 태양광 웨이퍼의 플라스마 화학 증착 공정에 사용되는 그라파이트보트에 공정 중 질화물 증착을 하는 방법에 관한 것이다.The present invention relates to a process for depositing nitride on a graphite boat for use in a plasma chemical vapor deposition process of a solar photovoltaic wafer.

현재 플라즈마 화학 증착 공정에 사용되고 있는 그라피이트보트는 본 공정에 투입되기 2시간 전 질화물 증착을 통하여 다공질 표면을 코팅 처리과정이 별도로 이루어지고 있어 생산성 저하와 비용발생의 문제점이 있다.The graphite boat currently used in the plasma chemical vapor deposition process has a problem of low productivity and cost because the coating process of the porous surface is performed separately by depositing nitride two hours before the introduction into the present process.

따라서 본 발명의 목적은 태양광 플라스마 화학 증착 공정 전 소요되는 2시간의 질화물 증착 과정을 거치지 않고 본 공정에서 해결할 수 있도록 하는 것이다.Accordingly, an object of the present invention is to solve the present invention without performing the nitriding process for two hours before the photovoltaic plasma chemical vapor deposition process.

화학 증착 튜브에 C(탄소)를 투입하여 그라피이트보트 표면에 C(탄소)를 추가 증착 시킨 뒤 CO2 가스를 튜브에 투입하고 RF GENERATOR에서 7000W 플라즈마파워 인가 시켜 CO2를 C, O2로 분리시킨 후 Si와 C를 합성한다. 이때 C(탄소)의 끈적이는 특징이 기존 SiN 물질을 그라파이티트 표면에 접착하는 역할을 한다. 공정 온도는 500도씨~550도씨, 공정 압력은 1,500 m Torr를 유지한다. 증착 시간은 7,200초 (2시간) 유지한다.C (carbon) was added to the chemical vapor deposition tube to add C (carbon) to the surface of the graphite boat. CO2 gas was introduced into the tube, and 7000W plasma power was applied from the RF GENERATOR to separate CO2 and C And C are synthesized. At this time, the sticky characteristic of C (carbon) serves to adhere the existing SiN material to the grapidite surface. The process temperature is maintained at 500 ° C to 550 ° C and the process pressure is maintained at 1,500 ° Torr. The deposition time is 7,200 seconds (2 hours).

위와 같은 공정을 통하여 그라피이트보트는 HF 세정 후 질화물 증착 공정이 별도로 필요 없고 그로인하여 생산성 10% 증대 및 세정 비용을 50% 절감의 효과를 볼 수 있다.Through the above process, grapevine boat does not need a nitride deposition process after HF cleaning, thereby increasing productivity by 10% and reducing cleaning cost by 50%.

도 1은 플라스마 화학 증착 공정에서 그라피이트보트에 대한 질화물 증착 공정을 설명하는 것이다.Figure 1 illustrates a nitride deposition process for a graphite boat in a plasma chemical vapor deposition process.

수정(QUARTZ) 튜브에 도 1과 같이 SiH4, NH3, CO2 가스를 투입하여 그라파이트 표면에 C(탄소)를 추가 증착한다. C(탄소)는 CO2 가스를 수정(QUARTZ) 튜브에 투입 후 그림 도 1과 같이 RF GENERATOR에서 7000와트 플라즈마파워 인가시킨 후 CO2를 C, O2로 분리시킨 후 Si와 C를 합성한다. C는 끈적임 특징 있어 기존 SiN 물질을 그라파이트 표면에 접착하는 역할을 한다. 공정 온도는 C(탄소)를 다 활성화 시킬 수 있게 도 1과 같이 500도씨~550도씨 유지시킨다. 공정 압력은 도 1과 같이 1,500 m Torr로 유지한다. 증착 시간은 C(탄소)를 증착 활성화 시키기 위해 7,200 초(2시간) 증착한다. 공정 조건을 정리하면 플라즈마파워는 7,000W이고, 공정압력은 1,500 m Torr, 공정가스는 SiH4, NH3, CO2이고, 공정온도는 500도씨~550도씨를 유지하며 증착 시간은 7,200초(2시간)이다.Add SiH4, NH3, and CO2 gas to the QUARTZ tube as shown in Fig. 1 to further deposit C (carbon) on the graphite surface. C (carbon) injects CO 2 gas into a quartz tube. After applying 7000 Watt plasma power to the RF GENERATOR as shown in Fig. 1, CO2 is separated into C and O 2 and then Si and C are synthesized. C is a sticky material, which acts to bond existing SiN materials to the graphite surface. The process temperature is maintained at 500 ° C to 550 ° C as shown in Fig. 1 so that C (carbon) can be fully activated. The process pressure is maintained at 1,500 m Torr as shown in Fig. The deposition time is 7,200 seconds (2 hours) for C (carbon) to activate the deposition. The process conditions are as follows: plasma power is 7,000 W, process pressure is 1,500 mTorr, process gases are SiH4, NH3, CO2, process temperature is 500 ° C ~ 550 ° C, deposition time is 7,200 seconds (2 hours) to be.

Claims (4)

태양광 플라스마 화학 증착 공정에서 그라파이트보트를 튜브에 투입 후 C(탄소)를 투입하여 튜브에서 그라파이트보트에 질화물을 증착하는 공정.In the photovoltaic plasma chemical vapor deposition process, a graphite boat is put into a tube, and C (carbon) is injected to deposit a nitride in the graphite boat in the tube. 제1청구항에 있어서, CO2를 튜브 투입 후 RF GENERATOR에서 7,000와트 플라즈마파워 인가하고 CO2를 C와 O2로 분리하여 Si와 C를 합성하는 공정.In the first claim, a process of synthesizing Si and C by applying a 7,000-watt plasma power from an RF generator to the CO2 tube and separating the CO2 into C and O2. 제1청구항에 있어서, C(탄소) 활성화를 위해 공정온도는 500도씨~550도씨 유지하는 공정.The process according to claim 1, wherein the process temperature is maintained at about 500 ° C to about 550 ° C for C (carbon) activation. 제1청구항에 있어서, C(탄소) 증착 활성화를 위해 공정시간은 7,200초(2시간) 유지하는 공정.


Process according to claim 1, wherein the process time is maintained for 7,200 seconds (2 hours) for C (carbon) deposition activation.


KR1020170049559A 2017-04-18 2017-04-18 The method of nitroride deposition on graphite boat in solar pecvd process KR20180116819A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020170049559A KR20180116819A (en) 2017-04-18 2017-04-18 The method of nitroride deposition on graphite boat in solar pecvd process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170049559A KR20180116819A (en) 2017-04-18 2017-04-18 The method of nitroride deposition on graphite boat in solar pecvd process

Publications (1)

Publication Number Publication Date
KR20180116819A true KR20180116819A (en) 2018-10-26

Family

ID=64099090

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170049559A KR20180116819A (en) 2017-04-18 2017-04-18 The method of nitroride deposition on graphite boat in solar pecvd process

Country Status (1)

Country Link
KR (1) KR20180116819A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109680265A (en) * 2018-12-25 2019-04-26 浙江晶科能源有限公司 A kind of graphite boat and preparation method thereof
CN110449409A (en) * 2019-08-15 2019-11-15 平煤隆基新能源科技有限公司 It is a kind of to avoid the treatment process that graphite boat prints in PECVD process
CN111020531A (en) * 2019-12-18 2020-04-17 常州时创能源股份有限公司 Combined graphite boat sleeve and graphite boat
CN113981417A (en) * 2021-10-19 2022-01-28 常州亿晶光电科技有限公司 Method for optimizing saturation effect of graphite boat

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109680265A (en) * 2018-12-25 2019-04-26 浙江晶科能源有限公司 A kind of graphite boat and preparation method thereof
CN109680265B (en) * 2018-12-25 2020-10-02 浙江晶科能源有限公司 Graphite boat and manufacturing method thereof
CN110449409A (en) * 2019-08-15 2019-11-15 平煤隆基新能源科技有限公司 It is a kind of to avoid the treatment process that graphite boat prints in PECVD process
CN111020531A (en) * 2019-12-18 2020-04-17 常州时创能源股份有限公司 Combined graphite boat sleeve and graphite boat
CN111020531B (en) * 2019-12-18 2024-03-22 常州时创能源股份有限公司 Combined graphite boat sleeve and graphite boat
CN113981417A (en) * 2021-10-19 2022-01-28 常州亿晶光电科技有限公司 Method for optimizing saturation effect of graphite boat
CN113981417B (en) * 2021-10-19 2023-11-21 常州亿晶光电科技有限公司 Method for optimizing saturation effect of graphite boat

Similar Documents

Publication Publication Date Title
KR20180116819A (en) The method of nitroride deposition on graphite boat in solar pecvd process
US8337960B2 (en) Seasoning method for film-forming apparatus
JP5276594B2 (en) Film formation method by vapor deposition from plasma
US10128088B2 (en) Graded in-situ charge trapping layers to enable electrostatic chucking and excellent particle performance for boron-doped carbon films
TW200943419A (en) Low wet etch rate silicon nitride film
WO2006007313A3 (en) Improving water-barrier performance of an encapsulating film
JP2009071286A5 (en)
WO2006026350A3 (en) Low temperature silicon compound deposition
WO2010077728A3 (en) Densification process for titanium nitride layer for submicron applications
WO2011109266A4 (en) Method and apparatus for single step selective nitridation
TW200603225A (en) Method of manufacturing carbon nanotube and plasma cvd(chemical vapor deposition) apparatus for implementing thereof
US20140083451A1 (en) Method for in situ cleaning of mocvd reaction chamber
CY1108484T1 (en) METHOD FOR EXPOSURE OF SILICON
TW200604390A (en) Film formation apparatus and method of cleaning such a film formation apparatus
US20140083452A1 (en) Method for in situ cleaning of mocvd reaction chamber
TW201614727A (en) Method of depositing insulation layer on deep trench having high aspect ratio
TW200737325A (en) Film formation apparatus and method of using the same
US20130239988A1 (en) Deposition chamber cleaning using in situ activation of molecular fluorine
TW200614350A (en) Apparatus for plasma chemical vapor deposition and method for fabricating semiconductor device by using the same
WO2004048258A3 (en) Method for forming carbon nanotubes
JP2006519482A5 (en)
US20130276820A1 (en) Chemical vapor deposition chamber cleaning with molecular fluorine
Avram et al. Low stress PECVD amorphous silicon carbide for MEMS applications
TW200707813A (en) Process for forming an as-grown active p-type III-V nitride compound
TW200508415A (en) Methods of reducing plasma-induced damage for advanced plasma CVD dielectics