KR20180114602A - Composition for forming solar cell electrode and electrode prepared using the same - Google Patents

Abstract

The present invention provides a composition for forming a solar cell electrode which reduces contact resistance and linear resistance, is excellent in an electrical property, increases a tensile strength and can increase reliability, and an electrode formed therefrom. The composition for forming a solar cell electrode comprises conductive powders, a glass frit and an organic vehicle. The glass frit includes a compound of a first glass frit having a melting temperature of 400°C to 600°C and a second glass frit having the melting temperature of 650°C to 800°C.

Description

TECHNICAL FIELD [0001] The present invention relates to a composition for forming a solar cell electrode, and an electrode made therefrom. BACKGROUND ART [0002]

The present invention relates to a composition for forming a solar cell electrode and an electrode made therefrom. More specifically, the present invention includes a mixture of a first glass frit and a second glass frit having a melting temperature of the present invention, thereby exhibiting excellent contact resistance and wire resistance, and improving pull strength by increasing pull strength To a composition for forming a solar cell electrode and an electrode made therefrom.

Solar cells generate electrical energy by using the photoelectric effect of pn junction that converts photon of sunlight into electricity. The solar cell is formed with a front electrode and a rear electrode on a semiconductor wafer or substrate upper and lower surfaces, respectively, where a pn junction is formed. The photovoltaic effect of the pn junction is induced in the solar cell by the sunlight incident on the semiconductor wafer, and the electrons generated from the pn junction provide a current flowing to the outside through the electrode. Such an electrode of the solar cell can be formed on the surface of the wafer by applying, patterning and firing the electrode paste composition.

Recently, as the thickness of the emitter has been continuously thinned to increase the efficiency of the solar cell, shunting phenomenon which can degrade the performance of the solar cell can be caused. In addition, in order to increase the efficiency of the solar cell, the area of the solar cell gradually increases and the sheet resistance of the wafer gradually increases, which can reduce the efficiency of the solar cell by increasing the contact resistance of the solar cell.

Accordingly, it is possible to minimize the damage to the bonding of the emitter layer under various sheet resistance and improve the conductivity at the interface between the wafer and the electrode, thereby improving the contact resistance and line resistance, and improving the solar cell efficiency. Need to develop.

The background art of the present invention is disclosed in Japanese Laid-Open Patent Application No. 2015-144162.

A problem to be solved by the present invention is to provide a composition for forming a solar cell electrode capable of lowering a contact resistance and a line resistance to provide an excellent electrical characteristic, a tensile strength, and a reliability.

Another problem to be solved by the present invention is to provide a solar cell electrode having a low contact resistance and a low line resistance and having excellent electrical characteristics and high tensile strength and thus high reliability.

The composition for forming a solar cell electrode according to the present invention comprises a conductive powder, a glass frit and an organic vehicle, wherein the glass frit has a first glass frit having a melting temperature (Tm) Lt; 0 > C to 800 < 0 > C.

In one embodiment, the first glass frit may be a tellurium-bismuth glass frit containing tellurium (Te) and bismuth (Bi) elements.

In one embodiment, the first glass frit is made of a material selected from the group consisting of Zn, Pb, P, Ge, Ga, Ce, (Si), tungsten (W), magnesium (Mg), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In) Ba, Ni, Cu, Na, K, As, Co, Zr, Mn, Al, And oxides thereof. [0027] In the present invention,

In one embodiment, the second glass frit may be a tellurium-bismuth glass frit containing tellurium (Te) and bismuth (Bi) elements.

In one embodiment, the first glass frit and the second glass frit may be included in a weight ratio of 6: 1 to 1: 1.

In one embodiment, the first glass frit comprises 0.5 wt% to 10 wt% of the total weight of the composition for forming a solar cell electrode, and the second glass frit contains 0.1 wt% % To 5% by weight.

In one embodiment, the composition may comprise from 60% to 95% by weight of the conductive powder, from 1% to 20% by weight of the glass frit, and the remainder of the organic vehicle.

In one embodiment, the composition may further comprise at least one of a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, a defoamer, a pigment, a UV stabilizer, an antioxidant, or a coupling agent.

The electrode of the present invention can be produced with the composition for forming a solar cell electrode of the present invention.

The present invention provides a composition for forming a solar cell electrode capable of lowering a contact resistance and a line resistance, thereby improving electrical characteristics, increasing tensile strength, and increasing reliability.

The present invention provides a solar cell electrode having a low contact resistance and a low line resistance, which has excellent electrical characteristics and high tensile strength and thus has high reliability.

1 is a schematic view briefly showing a structure of a solar cell according to an embodiment of the present invention.

Embodiments of the present application will now be described in more detail with reference to the accompanying drawings. However, the techniques disclosed in this application are not limited to the embodiments described herein but may be embodied in other forms.

In the present specification, the "melting temperature" of the glass frit can be measured by a thermogravimetric differential thermal (TG-DTA) method.

In this specification, the content (mol%) of each metal element contained in the glass frit can be measured by inductively coupled plasma-optical emission spectroscopy (ICP-OES). Since the inductively coupled plasma-atomic emission spectrometry (ICP-OES) uses a very small amount of sample, the sample preparation time can be shortened, errors due to sample pretreatment can be reduced, and analytical sensitivity is excellent.

Specifically, the ICP-OES (Inductively Coupled Plasma-Atomic Emission Spectroscopy (ICP-OES)) is a method in which a sample is pretreated, a standard solution is prepared, and the concentrations of the elements to be measured are measured and converted, Can be accurately measured.

In the step of pretreating the sample, the sample may be carbonized by dissolving an appropriate amount of the sample using an acidic solution capable of dissolving the glass frit as a sample and heating the sample. As the acidic solution, for example, a sulfuric acid (H ₂ SO ₄ ) solution or the like may be used.

The carbonized sample can be appropriately diluted to the analytical concentration range of the element to be analyzed with a solvent such as distilled water and hydrogen peroxide (H ₂ O ₂ ). The analytical concentration range can be used in a diluted state up to 10,000 times in consideration of the element detection capability of the applied ICP-OES instrument.

The pretreated sample may be calibrated with a standard solution of an analytical element for elemental measurement, for example, an ICP-OES instrument. For example, the standard solution is introduced into an ICP-OES measuring instrument and a calibration curve is created using an external standard method. The concentration of the analyte in the sample pretreated with the ICP- ppm) and then calculating the molar ratio of each element in the glass frit.

Composition for forming solar cell electrode

The composition for forming a solar cell electrode according to the present invention comprises a conductive powder, a glass frit, and an organic vehicle, wherein the glass frit has a first glass frit having a melting temperature (Tm) RTI ID = 0.0 > 650 C < / RTI > to < RTI ID = 0.0 > 800 C. < / RTI > The inventor of the present invention has found that a composition for forming a solar cell electrode comprising a mixture of the first glass frit and the second glass frit has a low contact resistance and a low line resistance and thus has excellent electrical properties and high tensile strength, And completed the present invention.

Hereinafter, the components of the composition of the present invention will be described in detail.

Conductive powder

The conductive powder may include silver (Ag) powder. The silver powder may be a powder having a nano-sized or micro-sized particle size, for example, a silver powder having a size of several tens to several hundreds of nanometers, or a silver powder of a few to several tens of micrometers. In addition, silver powder having two or more different sizes may be mixed with the silver powder.

The shape of the conductive powder is not particularly limited, and particles having various shapes, for example, spherical, plate-like or amorphous shapes can be used without limitation.

The average particle diameter (D50) of the conductive powder may be 0.1 탆 to 10 탆, and preferably 0.5 탆 to 5 탆. Within this range, the contact resistance and line resistance can be lowered. The average particle diameter (D50) was measured using a 1064LD model manufactured by CILAS after dispersing conductive powder in isopropyl alcohol (IPA) by ultrasonic wave at 25 DEG C for 3 minutes.

The conductive powder may be contained in an amount of 60 wt% to 95 wt% of the total weight of the composition for forming a solar cell electrode. When the content of the conductive powder satisfies the above range, the conversion efficiency of the solar cell is excellent, and the paste can be smoothly formed. Preferably, the conductive powder may be contained in an amount of 70% by weight to 90% by weight based on the total weight of the composition for forming a solar cell electrode.

Glass frit

The glass frit is for etching the antireflection film during the firing process of the composition for forming a solar cell electrode and melting the conductive powder to produce crystal grains of the conductive powder in the emitter region. Further, the glass frit improves the adhesive force between the conductive powder and the wafer, softens at the time of sintering, and induces an effect of lowering the firing temperature.

The composition for forming a solar cell electrode of the present invention comprises a mixture of the first glass frit and the second glass frit having melting temperatures different from each other and having a specific melting temperature range. In general, in order to lower the contact resistance and line resistance and to improve the tensile strength, the content of the glass frit can not be increased and therefore the open-circuit voltage can be lowered. However, the present invention includes a mixture of a first glass frit and a second glass frit having melting temperatures different from each other and having a melting temperature range of the present invention, thereby lowering the contact resistance and line resistance while minimizing the drop in the open voltage, Could.

Hereinafter, the first glass frit and the second glass frit will be described in detail.

(A) The first glass frit

The first glass frit may have a melting temperature of 400 ° C to 600 ° C. Within this range, the contact resistance and line resistance can be lowered. Preferably, the melting temperature of the first glass frit may be between 450 ° C and 500 ° C.

The first glass frit may be a tellurium-bismuth glass frit containing tellurium (Te) and bismuth (Bi) elements. The first glass frit contains the tellurium and bismuth element, so that the above-mentioned melting temperature can be easily secured, and the anti-reflection film can be stably etched to improve the contact resistance.

In addition to tellurium and bismuth, the first glass frit may further comprise a metal and / or a metal oxide. For example, the first glass frit may be formed of at least one selected from the group consisting of Zn, Pb, P, Ge, Ga, (Si), tungsten (W), magnesium (Mg), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In) (Ba), Ni (Ni), Cu, Na, K, As, Co, Zr, Mn, And at least one element selected from the group consisting of oxides thereof.

In one embodiment, the first glass frit may be a Te-Bi-O glass frit comprising tellurium, a bismuth element. Preferably, the Te-Bi-O glass frit may comprise 45 mol% to 75 mol% of tellurium and 5 mol% to 20 mol% of bismuth. It is possible to realize excellent contact resistance and wire resistance in the above range.

In another embodiment, the first glass frit may be a Te-Bi-Zn-O glass frit containing tellurium, bismuth, and zinc elements. Preferably, the Te-Bi-Zn-O glass frit may comprise 45 mol% to 75 mol% of tellurium, 5 mol% to 20 mol% of bismuth and 1 mol% to 20 mol% of zinc. Within this range, excellent contact resistance and wire resistance can be realized.

The first glass frit may be prepared from tellurium oxide, bismuth oxide and optionally such metals and / or metal oxides using conventional methods. For example, after the tellurium oxide, bismuth oxide and optionally the metal and / or metal oxide are mixed using a ball mill or a planetary mill, the mixed composition is mixed with 800 At a temperature of from room temperature to 1300 占 폚, quenching at 25 占 폚, and then grinding the resultant by a disk mill, a planetary mill or the like to obtain a first glass frit.

The first glass frit may be contained in an amount of 0.5 wt% to 10 wt% of the total weight of the composition for forming a solar cell electrode. When the content of the first glass frit satisfies the above range, it has excellent contact resistance and line resistance and can increase the tensile strength. Preferably, the first glass frit may comprise from 1 wt% to 6 wt% of the total weight of the composition for forming a solar cell electrode.

(B) The second glass frit

The second glass frit may have a melting temperature of 650 ° C to 800 ° C. Within this range, it is possible to prevent the open-circuit voltage from being minimized and to have an excellent tensile strength. Preferably, the melting temperature of the second glass frit may be 700 ° C to 750 ° C.

The second glass frit may be a tellurium-bismuth glass frit containing tellurium and a bismuth element. Both the first glass frit and the second glass frit can further improve the tensile strength when containing the tellurium element.

In addition to tellurium and bismuth, the second glass frit may further comprise a metal and / or a metal oxide. For example, the second glass frit may be made of a material selected from the group consisting of Zn, Pb, P, Ge, Ga, (Si), tungsten (W), magnesium (Mg), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In) (Ba), Ni (Ni), Cu, Na, K, As, Co, Zr, Mn, And at least one element selected from the group consisting of oxides thereof.

In one embodiment, the second glass frit may be a Te-Bi-O glass frit comprising tellurium and a bismuth element. Preferably, the Te-Bi-O glass frit may comprise 5 mol% to 20 mol% of tellurium and 10 mol% to 30 mol% of bismuth. The tensile strength improvement effect may be in the above range.

In another embodiment, the second glass frit may be a Te-Bi-W-O glass frit containing tellurium, bismuth and a tungsten element. Preferably, the Te-Bi-W-O glass frit may comprise 5 mol% to 20 mol% of tellurium, 10 mol% to 30 mol% of bismuth and 5 mol% to 30 mol% of tungsten. The tensile strength improvement effect may be in the above range.

The second glass frit can be made from tellurium oxide, bismuth oxide and optionally such metals and / or metal oxides using conventional methods. The manufacturing method is substantially the same as described in the first glass frit.

The second glass frit may be contained in an amount of 0.1 wt% to 5 wt% of the total weight of the composition for forming a solar cell electrode. When the content of the second glass frit satisfies the above range, the contact resistance and line resistance can be lowered and the tensile strength can be increased. Preferably, the second glass frit may comprise 0.5 wt% to 3 wt% of the total weight of the composition for forming a solar cell electrode.

The shapes and sizes of the first glass frit and / or the second glass frit are not particularly limited. For example, the first glass frit or the second glass frit may have an average particle diameter (D50) of 0.1 占 퐉 to 10 占 퐉. The shape of the first glass frit or second glass frit may be spherical or irregular. The average particle size (D50) was measured using a 1064LD model manufactured by CILAS after dispersing the glass frit powder in isopropyl alcohol (IPA) at 25 DEG C for 3 minutes by ultrasonic wave.

Meanwhile, in the present invention, the first glass frit and the second glass frit may be contained in a weight ratio of 6: 1 to 1: 1 (first glass frit: second glass frit). In the above range, there may be an effect of lowering the contact resistance and line resistance and improving the tensile strength. Preferably in a weight ratio of 4: 1 to 1: 1.

On the other hand, the content of the entire glass frit including the first glass frit and the second glass frit may be 1 wt% to 20 wt%, preferably 2 wt% to 15 wt% based on the total weight of the composition for forming a solar cell electrode . When it is contained in the above range, the pn junction stability can be ensured under various sheet resistance, the line resistance value can be minimized, and ultimately the efficiency of the solar cell can be improved.

abandonment Vehicle

The organic vehicle imparts suitable viscosity and rheological properties to the composition through mechanical mixing with inorganic components of the composition for forming solar cell electrodes.

The organic vehicle may be an organic vehicle ordinarily used in a composition for forming a solar cell electrode, and may generally include a binder resin, a solvent, and the like.

As the binder resin, an acrylate-based or cellulose-based resin can be used, and ethylcellulose is generally used. However, it is preferable to use a mixture of ethylhydroxyethylcellulose, nitrocellulose, a mixture of ethylcellulose and phenol resin, an alkyd resin, a phenol resin, an acrylic ester resin, a xylene resin, a polybutene resin, a polyester resin, Based resin, a rosin of wood, or a polymethacrylate of alcohol may be used.

Examples of the solvent include hexane, toluene, ethyl cellosolve, cyclohexanone, butyl cellosolve, butyl carbitol (diethylene glycol monobutyl ether), dibutyl carbitol (diethylene glycol dibutyl ether) , Butyl carbitol acetate (diethylene glycol monobutyl ether acetate), propylene glycol monomethyl ether, hexylene glycol, terpineol, methyl ethyl ketone, benzyl alcohol, gamma butyrolactone or ethyl lactate, Two or more of them may be used in combination.

The organic vehicle may be included in the remaining amount of the composition for forming a solar cell electrode, and may be included in an amount of 1 wt% to 30 wt%, based on the total weight. Within this range, sufficient adhesive strength and excellent printability can be ensured.

additive

The composition for forming a solar cell electrode of the present invention may further include conventional additives as needed in order to improve flow characteristics, process characteristics, and stability in addition to the above-described components. The additive may be used alone or as a mixture of two or more of a dispersing agent, a thixotropic agent, a plasticizer, a viscosity stabilizer, a defoaming agent, a pigment, an ultraviolet stabilizer, an antioxidant and a coupling agent. These may be contained in an amount of 0.1 wt% to 5 wt% of the total weight of the composition for forming a solar cell electrode, but the content can be changed as necessary.

Solar cell electrode and solar cell comprising same

Another aspect of the present invention relates to an electrode formed from the composition for forming a solar cell electrode and a solar cell including the same. 1 shows a structure of a solar cell according to one embodiment of the present invention.

1, a composition for electrode formation is printed on a wafer 100 or a substrate including a p-layer (or n-layer) 101 and an n-layer (or p-layer) So that the rear electrode 210 and the front electrode 230 can be formed. For example, the electrode forming composition may be applied to the rear surface of the wafer by printing and then dried at a temperature of about 200 캜 to 400 캜 for about 10 to 60 seconds to perform a preliminary preparation step for the rear electrode. In addition, a preparation step for the front electrode can be performed by printing a composition for electrode formation on the entire surface of the wafer and then drying it. Thereafter, the front electrode and the rear electrode can be formed by performing a sintering process in which sintering is performed at 400 to 950 캜, preferably 700 to 950 캜, for about 30 to 210 seconds.

Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to embodiments of the present invention. However, the following examples are provided to aid understanding of the present invention, and the scope of the present invention is not limited to the following examples.

The detailed structures of the glass frit used in the following examples and comparative examples are shown in Tables 1 and 2. Table 1 below shows the first glass frit, and Table 2 below shows the second glass frit. The content of each metal element contained in each glass frit in the first glass frit and the second glass frit was measured by ICP-OES described above. The melting temperatures of the respective glass frit in the first glass frit and the second glass frit were measured by the TG-DTA method described above.

Te
(mole%) Bi
(mole%) Zn
(mole%) Li
(mole%) W
(mole%) Melting temperature
(° C) A1 75.0 10.5 7.0 4.5 3.0 400 A2 60.5 12.5 12.5 4.0 10.5 600 A3 70.0 10.0 5.0 12.0 3.0 380 A4 60.5 12.5 10.0 3.5 13.5 620

Te
(mole%) Bi
(mole%) Zn
(mole%) Li
(mole%) W
(mole%) Si
(mole%) Melting temperature
(° C) B1 15.0 15.0 14.5 13.5 7.0 35.0 650 B2 10.0 15.0 15.0 9.0 15.0 36.0 800 B3 20.0 10.0 14.5 15.5 5.0 35.0 630 B4 10.0 17.0 13.5 7.0 30.0 22.5 820

Example  One

1.0% by weight of ethyl cellulose (STD4) as an organic binder was sufficiently dissolved in 6.5% by weight of butylcarbitol as a solvent at 60 占 폚, and spherical silver powder having an average particle diameter of 1.0 占 퐉 (Dowa Hightech CO. , LTD., AG-4-8), 3.0 wt% of glass frit, 0.2 wt% of dispersant BYK-chemie as an additive and 0.3 wt% of Thixatrol ST (Elementis co.) As additives. Roll mixer to prepare a composition for forming a solar cell electrode. At this time, the glass frit contained the first glass frit and the second glass frit in Table 1 and Table 2 in the contents shown in Table 3 below.

Example  2 to Example  4

A composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except that the kinds and contents of the first glass frit and the second glass frit were changed as shown in Table 3 below.

Comparative Example  One

In Example 1, a composition for forming a solar cell electrode was prepared in the same manner except that the second glass frit was not included.

Comparative Example  2

In Example 1, a composition for forming a solar cell electrode was prepared in the same manner except that the first glass frit was not included.

Comparative Example  3

A composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except that A3 was used instead of the first glass frit A1.

Comparative Example  4

A composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except that A4 was used instead of the first glass frit A1.

Comparative Example  5

A composition for forming a solar cell electrode was prepared in the same manner as in Example 1, except that B3 was used instead of the second glass frit B1.

Comparative Example  6

A composition for forming a solar cell electrode was prepared in the same manner as in Example 1, except that B4 was used instead of the second glass frit B1.

The contact resistance, the line resistance and the tensile strength were measured for each of the solar battery cells as described below using the composition for forming a solar cell electrode prepared in Examples and Comparative Examples, Respectively.

Manufacture of solar cell

The composition for forming a solar cell electrode prepared in the above Examples and Comparative Examples was textured on the front surface of a wafer (p-type wafer doped with boron), and then an n + layer was formed by POCL 3 A multi-crystalline wafer in which silicon nitride (SiNx: H) was formed as an antireflective film) was printed by screen printing in a predetermined pattern and dried at 300 to 400 ° C for 1 minute using an infrared drying furnace. Thereafter, aluminum paste was printed on the rear surface of the wafer and dried in the same manner. The cells thus formed were fired at 400 to 900 ° C for 50 seconds using a belt-type firing furnace to produce a solar cell.

( 1) Contact resistance

The contact resistance (Rc) of the cell thus prepared was measured using a contact resistance measuring device (GP 4-TEST Pro.) Using a cell printed with a finger bar of 1 cm * 2.0 cm.

( 2) Line resistance

The resistivity (R _L ) of the cell thus prepared was measured using a resistance measuring instrument (keithley 2200) to measure the resistance of the finger bar 3 cm in the dark room.

( 3) Tensile  burglar

A flux was applied to the electrode prepared as described above, and the electrode was bonded to the ribbon at 300-400 ° C using an iron soldering machine (HAKKO). Then, tensile strength (N / mm) was measured at a stretching rate of 50 mm / min using a tensile machine (Tinius olsen) at a peeling angle of 180 °. Preferably, the tensile strength may be 3.7 N / mm or more, for example, 3.7 N / mm to 5.0 N / mm. In this range, the electrode reliability can be good.

( 4) Open voltage

The open-circuit voltage (voc) of the fabricated test cell was measured using a solar cell efficiency measuring device (Passan, CT-801).

Example Comparative Example One 2 3 4 One 2 3 4 5 6 Glass
Frit
(weight%)






A1 2.0 - 2.0 - 3.0 - - - 2.0 2.0 A2 - 2.0 - 2.0 - - - - - - A3 - - - - - - 2.0 - - - A4 - - - - - - - 2.0 - - B1 1.0 1.0 - - - 3.0 1.0 1.0 - - B2 - - 1.0 1.0 - - - - - - B3 - - - - - - - - 1.0 - B4 - - - - - - - - - 1.0 Contact Resistance (Ω) 0.30 0.30 0.29 0.31 0.27 0.64 0.36 0.39 0.36 0.42 Line resistance (Ω) 0.34 0.35 0.33 0.35 0.28 0.49 0.39 0.37 0.35 0.38 The tensile strength
(N / mm) 3.9 3.8 4.5 4.2 2.7 4.5 4.0 4.1 3.5 3.9 Open-circuit voltage (mV) 628.4 632.1 628.9 631.3 624.8 632.3 628.7 627.1 629.3 628.2

As shown in Table 3, the composition for forming a solar cell electrode of the present invention shows good electrical characteristics and excellent tensile strength as the contact resistance and line resistance are low and the open circuit voltage is high.

On the other hand, Comparative Example 1, which did not include the second glass frit of the present invention but contained only the first glass frit, showed low tensile strength and open-circuit voltage, and did not include the first glass frit of the present invention, Comparative Example 2 including only glass frit showed a result that the contact resistance was increased. In addition, it can be seen that Comparative Examples 3 to 6 including the glass frit deviating from the melting temperature of the present invention are inferior in all properties compared with Example 2.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (9)

Conductive powder, glass frit and organic vehicle,
Wherein the glass frit comprises a mixture of a first glass frit having a melting temperature (Tm) of 400 DEG C to 600 DEG C and a second glass frit having a melting temperature of 650 DEG C to 800 DEG C, Composition.
The method according to claim 1,
Wherein the first glass frit is a tellurium-bismuth glass frit including at least one of tellurium (Te) and bismuth (Bi).
3. The method of claim 2,
The first glass frit may include at least one selected from the group consisting of Zn, Pb, P, Ge, Ga, Ce, Fe, Li, Tungsten, magnesium, cesium, strontium, molybdenum, titanium, tin, indium, vanadium, barium, , Nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese Wherein the composition further comprises at least one element selected from the group consisting of the following elements:
The method according to claim 1,
Wherein the second glass frit is a tellurium-bismuth glass frit including at least one of tellurium (Te) and bismuth (Bi).
The method according to claim 1,
Wherein the first glass frit and the second glass frit are contained in a weight ratio of 6: 1 to 1: 1.
The method according to claim 1,
Wherein the first glass frit is contained in an amount of 0.5 wt% to 10 wt% of the total weight of the composition for forming a solar cell electrode,
Wherein the second glass frit is contained in an amount of 0.1 wt% to 5 wt% of the total weight of the composition for forming a solar cell electrode.
The method according to claim 1,
The composition
60% to 95% by weight of the conductive powder,
1% to 20% by weight of the glass frit,
And the remaining amount of the organic vehicle.
The method according to claim 1,
Wherein the composition further comprises at least one of a dispersing agent, a thixotropic agent, a plasticizer, a viscosity stabilizer, a defoamer, a pigment, an ultraviolet stabilizer, an antioxidant and a coupling agent.
An electrode formed from the composition for forming a solar cell electrode according to any one of claims 1 to 8.

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