KR20180111428A - X-ray testing apparatus - Google Patents

Abstract

Provided is an X-ray inspection apparatus capable of performing high-precision inspection on an inspection target object. An X-ray inspection apparatus (1) includes an X-ray detector (15) disposed on a periphery of a position opposite to an X-ray tube (12) while a stage (11) on which a semiconductor device (70) is loaded is interposed between the X-ray detector (15) and the X-ray tube (12), and facing the X-ray tube (12). The X-ray detector (15) is a direct conversion type X-ray detector that outputs a count value obtained by counting X-ray photons of an incident X-ray. An image processing unit (57) reconfigures a transmission image of the semiconductor device (70) photographed by a first X-ray detector (15) and generates a stereoscopic (3D) image. In addition, the image processing unit (57) obtains X-ray energy transmitted through the semiconductor device (70) according to the count value outputted from the X-ray detector (15), and extracts image data of a bump from the 3D image according to the energy. Further, the image processing unit (57) measures a height of the bump, that is, an interval of semiconductor chips according to the extracted image data.

Description

[0001] X-RAY TESTING APPARATUS [0002]

The present invention relates to an X-ray inspection apparatus.

Conventional X-ray inspection devices are used in various fields. The X-ray inspection apparatus is used for inspecting, for example, a semiconductor device as an inspected object. For example, a semiconductor device having a plurality of semiconductor chips connects a stacked semiconductor chip using a penetrating electrode (TSV) connecting the stacked semiconductor chips. Since the penetrating electrode is formed in a state that it is included in the semiconductor chip, the state of the penetrating electrode can not be confirmed on the appearance of the semiconductor chip. Thus, the state (for example, position) of the penetrating electrode is inspected from the X-ray absorption amount transmitted through the semiconductor chip by using the X-ray inspection apparatus. (See, for example, Patent Document 1).

JP 2016-118445 A

However, it is required to inspect an object such as a semiconductor device with high image quality. For example, in a semiconductor device in which a plurality of semiconductor chips are stacked, it is required to measure the spacing of the semiconductor chips.

An object of the present invention is to provide an X-ray inspection apparatus capable of high-precision inspection of an inspected object.

An X-ray inspection apparatus for solving the above-mentioned problems includes a stage having a mounting surface on which a measured object is mounted, an X-ray tube for irradiating X-rays to the measured object, A first X-ray detector, and an image processing unit for generating a three-dimensional image of the object to be measured and measuring an object to be measured, wherein the first X-ray detector is a direct conversion unit for outputting a count value obtained by counting X- Type X-ray detector, and is disposed in the periphery of a position opposite to the X-ray tube with the stage interposed therebetween, and the detection surface on which the X-ray is incident is inclined with respect to the axial direction of the X-ray irradiated from the X- And the image processing unit generates the stereoscopic image by reconstructing the transmission image of the object to be measured, which is taken by the first X-ray detector, Extracting the measurement object image data from the stereoscopic image based on the energy, and measuring the measurement object in accordance with the extracted image data.

In the X-ray inspection apparatus, the first X-ray detector has detection pixels arranged in a matrix, and the image processing unit obtains a peak value of the energy of the X-ray incident on the detection pixel, Value and the peak value are compared with each other to discriminate the substance transmitted through the incident X-ray.

In the X-ray inspection apparatus, it is preferable that the image processing unit extracts image data of a measurement object among the stereoscopic images according to the discrimination result based on the peak value and the threshold value, and measures the measurement object according to the extracted image data Do.

Wherein the object to be measured includes a plurality of semiconductor chips stacked as a semiconductor device, and the image processing unit extracts image data of bumps between the semiconductor chips as an object to be measured, It is preferable to measure the interval of the semiconductor chips based on the data.

Wherein the X-ray inspection apparatus is disposed at a position opposite to the X-ray tube with the stage interposed therebetween, and the X-ray transmitted through the object in the axial direction of the X- Ray detector.

According to the X-ray inspection apparatus of the present invention, it is possible to provide an X-ray inspection apparatus capable of high-precision inspection of an inspected object.

1 is a schematic configuration diagram of an X-ray inspection apparatus.
2 (a) is a schematic cross-sectional view of a semiconductor device, and FIG. 2 (b) is a partially enlarged cross-sectional view of a semiconductor device.
3 is an explanatory view showing X-rays transmitted through a semiconductor device.
4 is an explanatory diagram showing an X-ray energy spectrum.
5 is a flowchart showing the processing of the image processing unit.
6 (a) is a waveform diagram showing the operation of the photon counting system, and FIG. 6 (b) is a waveform diagram showing an operation of the stacking system.

The following describes each embodiment.

In addition, the accompanying drawings may be enlarged to show components in order to facilitate understanding. The dimensional ratio of the components may be different from that of the actual or other drawings. Also, in some cases, hatching of some components is omitted in order to facilitate understanding.

1 is a schematic configuration diagram of an X-ray inspection apparatus 1. Fig. In Fig. 1, an XYZ orthogonal coordinate system is set and the operation is described using the coordinate system. FIG. 1 shows respective axes of the X-axis, the Y-axis, and the Z-axis and the rotational direction (axial direction, circumferential direction) about each axis with arrows. The movable direction of each member is indicated by a solid line.

The X-ray inspection apparatus 1 has a radiation box 10 and a control section 50.

The irradiation box 10 includes a stage 11, an X-ray tube 12, a displacement meter 13 and X-ray detectors 14 and 15, a rotating stage 16, a support arm 17, 20).

The control unit 50 includes motor control units 51, 52, 53 and 54, an X-ray tube control unit 55, a displacement measurement unit 56 and an image processing unit 57.

The stage 11 has a mounting surface 11a on which a semiconductor device 70 is mounted as an inspected object and has an XY stage as a moving material in a horizontal direction (X axis direction and Y axis direction). The stage 11 has a stage moving mechanism (not shown) including a motor as an actuator, and moves in a horizontal direction parallel to the mounting surface 11a by the stage moving mechanism. The motor control unit 51 of the control unit 50 controls the motor of the stage 11. Therefore, the X-ray inspection apparatus 1 guides the semiconductor device 70 mounted on the mounting surface 11a to a predetermined inspection target position.

The semiconductor device 70 is, for example, a semiconductor device including a plurality of stacked semiconductor chips. The semiconductor chip is electrically connected by, for example, a solder bump. Further, the semiconductor chip includes a penetrating electrode (TSV) and is connected by a penetrating electrode. The X-ray inspection apparatus 1 is used for inspecting the state of the penetrating electrode and the solder bump in the semiconductor device 70.

As the material of the stage 11, a material having transparency to X-rays can be used. The stage 11 may be movable in the Z-axis direction (the vertical direction to the mounting surface 11a, the vertical direction) different from the above-described horizontal direction (X-axis direction and Y-axis direction). The stage 11 may be rotatable in the Z-axis direction (circumferential direction).

The X-ray tube 12 is disposed above the stage 11. The X-ray tube 12 irradiates the semiconductor device 70 with X-rays. Since it is not particularly limited to the X-ray tube 12, those conventionally used in X-ray inspection can be used. The X-ray tube control unit 55 of the control unit 50 controls generation and stop of X-rays of the X-ray tube 12.

The X-ray tube 12 is connected to the moving mechanism 18. The moving mechanism 18 includes a motor as an actuator. The X-ray tube 12 is movably supported by the moving mechanism 18 in the Z-axis direction. The motor control unit 53 controls the motor of the moving mechanism 18. [ The position of the X-ray tube 12 in the Z-axis direction is changed by the motor control unit 53 and the moving mechanism.

The displacement gauge 13 is used to measure the distance to the surface of the semiconductor device 70. The displacement gauge 13 can use, for example, a laser displacement gauge that measures the distance to the semiconductor device 70 in a noncontact manner. The displacement measuring section 56 of the control section 50 measures the distance to the surface of the semiconductor device 70 by the displacement gauge 13. The motor control unit 53 sets the distance between the X-ray tube 12 and the shielding unit 20 to a designated distance according to the measurement result by the displacement meter 13. The position of the X-ray tube 12 in the X-axis direction is changed according to the magnification. The magnification is expressed by a value obtained by dividing the distance from the X-ray focus (generated portion) to the X-ray detector 14 or 15 by the distance from the focal point to the semiconductor device 70.

[First X-ray detector]

The X-ray detector 14 is disposed at a position facing the X-ray tube 12 with the stage 11 interposed therebetween. For example, the X-ray detector 14 is disposed on the surface of the rotary stage 16 located immediately below the stage 11. [ The X-ray detector 14 is disposed such that its detection surface 14a is perpendicular to the axial direction (Z-axis direction) of the X-ray irradiated from the X-ray tube 12. [

[Second X-ray detector]

The X-ray detector 15 is arranged around the position where the X-ray detector 15 faces the X-ray tube 12 with the stage 11 interposed therebetween. For example, the X-ray detector 15 is attached to the second end (distal end) of the support arm 17 to which the first end (base end) is fixed to the rotation stage 16. The X-ray detector 15 is arranged such that the detection surface 15a thereof is inclined with respect to the axial direction (Z-axis direction) of the X-ray emitted from the X-ray tube 12. [ In detail, the X-ray detector 15 is arranged so that X-rays passing obliquely through the semiconductor device 70 are incident on the detection surface perpendicularly.

The rotation stage 16 corresponds to a &thetas; stage that is rotatable in the Z-axis rotation (circumferential direction). The rotating stage 16 has a rotating mechanism (not shown) including a motor as an actuator. The motor control unit 54 of the control unit 50 controls the motor of the rotation mechanism to rotate the X-ray detectors 14 and 15 in the circumferential direction.

The X-ray detectors 14 and 15 are, for example, flat panel detectors (FPDs). As this detector, for example, a direct conversion type detector can be used. The direct conversion detector detects X-rays by converting X-rays into charges in the conversion film. In detail, the X-ray detectors 14 and 15 are direct conversion type X-ray detectors (called Photon Counting Detectors (PCD)) of the photon counting method. The X-ray detectors (14, 15) include a conversion film for converting X-rays into electric charges and a processing unit for outputting electric charges as photon numbers. As the conversion film, for example, a semiconductor film such as amorphous selenium (? -Se) can be used. The processing section converts the charge collected for each pixel into a voltage signal, generates a detection signal indicating that one photon has been detected when the converted voltage signal is greater than a predetermined threshold voltage, And outputs the count value (the number of photons).

The X-ray inspection apparatus 1 has a shielding unit 20. The shielding unit 20 is disposed between the stage 11 and the X-ray tube 12. The shielding unit 20 includes a filter 21 and a shielding plate 22.

The filter 21 absorbs (cuts) a predetermined wavelength included in the X-ray. X-rays include continuous wavelength regions. The long wavelength X-rays cause the characteristic degradation of the semiconductor device 70. For example, in a semiconductor device such as a semiconductor memory, when X-rays are irradiated, X-rays are transmitted, and semiconductor silicon is charged. The charge thus adversely affects on / off characteristics of the transistor formed in the semiconductor memory. Therefore, the X-ray inspection apparatus 1 according to the present embodiment absorbs X-rays in the wavelength range to be influenced by the filter 21 by the filter 21 to suppress deterioration of the characteristics of the semiconductor device 70, Line inspection can be done.

Further, the filter may include a plurality of filter plates. The wavelength region of the X-rays irradiating the semiconductor device 70 can be changed by preparing a filter plate for absorbing X-rays of different wavelengths and transmitting the X-rays to the selected one or more filter plates.

The shielding plate 22 is formed in a substantially rectangular flat plate shape. As the material of the shielding plate 22, a metal material, for example, lead (Pb) or the like, in which X rays hardly pass through can be used. The shield plate 22 has a plurality of openings. The opening passes the X-rays installed at the desired position. The X-ray having passed through the opening is irradiated to the semiconductor device 70. The X-rays are transmitted through the semiconductor device 70 and enter the X-ray detectors 14 and 15. The motor control unit 52 controls the position of the shielding plate 22 so that the X-ray passing through the opening of the shielding plate 22 is incident on the X-ray detectors 14 and 15.

Here, the semiconductor device 70 will be described as an inspected object.

2 (a) shows an example of a semiconductor device. The semiconductor device 70 has a substrate 71 and a plurality of (for example, three) semiconductor chips 81, 82, and 83. Semiconductor chips 81, 82, and 83 are stacked on a substrate 71 in this order. The semiconductor chips 81 to 83 and the substrate 71 are connected to each other by, for example, bumps. The semiconductor chips 81 to 83 each have through electrodes 81a to 83a penetrating the chip. The penetrating electrode 81a electrically connects the circuit element (transistor, wiring, etc.) formed on the upper surface of the semiconductor chip 81 to the wiring of the substrate 71. [ Similarly, the penetrating electrodes 82a and 83a electrically connect the circuit elements formed on the upper surfaces of the semiconductor chips 82 and 83 to the semiconductor chips 81 and 82, respectively.

2B, a pad 81c is formed on the upper surface 81b of the semiconductor chip 81, and the pad 81c is connected to the penetrating electrode 81a. A pad 82c is formed on the lower surface 82b of the semiconductor chip 82 and a pad 82c is connected to the penetrating electrode 82a. The penetrating electrodes 81a and 82a are formed of, for example, copper. The pads 81c and 82c are formed of, for example, copper (Cu). The pads 81c of the semiconductor chip 81 and the pads 82c of the semiconductor chip 82 are connected to each other by the bumps 72. [ The bumps 72 are, for example, solder bumps.

It is required to measure the distance between the pads 81c and 82c, that is, the thickness of the bumps 72, with a gap (gap) in the stacking direction of the semiconductor chips 81 to 83 stacked in the semiconductor device 70 . An X-ray inspection apparatus 1 is used to nondestructively measure the spacing of the stacked semiconductor chips 81 to 83.

3 shows the penetrating electrodes 81a and 82a, the pads 81c and 82c and the bumps 72 of the semiconductor device 70. FIG. 1 and the X-ray inspection apparatus 1 are irradiated to each member at a predetermined angle (for example, 60 degrees) with respect to the axial direction (Z-axis direction) of the X-ray emitted from the X-ray tube 12 . That is, as shown in Fig. 3, the penetrating electrodes 81a and 82a, the pads 81c and 82c, and the bumps 72 are fixed to the bumps 72 at a predetermined angle (in the Z-axis direction, (For example, 60 degrees), the X-ray is irradiated at an angle.

As shown in Fig. 3, the X-ray R1 passes through the pad 82c. The X-ray R2 passes through the pad 82c, the bump 72 and the pad 81c. The X-ray R3 passes through the pad 81c. The X-rays R1, R2, and R3 transmitted through the object are energy spectra corresponding to the energy absorption characteristics of the object.

Fig. 4 shows X-ray energy spectra (C1, C2, C3). In Fig. 4, the abscissa is the energy of the X-ray, and the ordinate is the number of the X-ray photons (relative number). In FIG. 4, the maximum value of each spectrum is converted into '1' and relatively expressed.

Spectrum C1, shown in dashed lines, represents an X-ray energy spectrum that does not pass through the object. The spectrum C2 indicated by the solid line represents the energy spectrum of the X rays R2 transmitted through the pads 81c and 82c and the bumps 72 in Fig. 3 and the spectrum C3 indicated by the dashed line represents the energy spectra of the pads 81c, And the X-rays R3 and R1 transmitted through the X-rays 82a and 82c.

Thus, the X-ray energy spectrum differs depending on the transmitted substance. Therefore, it becomes possible to extract data (image data) by X-rays transmitted through the inspection object (for example, the bumps 72 in Fig. 3) by the energy spectrum.

The image processing 57 shown in Fig. 1 extracts data (image data) by X-rays transmitted through the inspection object (for example, the bumps 72 in Fig. 3) according to the energy spectrum.

5 shows a processing flow of the image processing unit 57. Fig.

First, in step S11, the image processing section 57 photographs an X-ray transmission image transmitted through the semiconductor device 70 shown in Fig. 2 (a). The image processing unit 57 obtains the transmitted image of the semiconductor device 70 by taking a photograph of the strays using the X-ray detector 15 and Fig.

Next, in step S12, the image processing section 57 can obtain the peak energy per detection pixel (Pixel).

In step S13, the image processing unit 57 compares the peak energy Peek Energy with a threshold value. The threshold value is set according to the object to be inspected (for example, the bump 72 shown in Fig. 3). The peak energy is compared with a threshold value to determine X-rays transmitted through a desired substance (object to be inspected). In step S14, the image processing unit 57 stores the determination result based on the threshold value.

Next, in step S15, the image processing unit 57 performs reconstruction calculation processing (e.g., Fourier transform method (FTM) and filter correction back projection method (FBP)) on the basis of the plurality of transmission images obtained by the strabismus photographing A 3D image of the semiconductor device 70 is obtained.

In step S16, the image processing unit 57 extracts data to be subjected to gap measurement in the three-dimensional image according to the determination result. In the present embodiment, the image processing unit 57 extracts the data from the bumps between the semiconductor chips for measuring the gap as a measurement object. In step S17, the image processing unit 57 performs the interval measurement based on the extracted data. The image processing unit 57 measures the thickness of the bump, that is, the interval of the semiconductor chips, based on the data of the extracted bumps.

(Action)

The operation of the X-ray inspection apparatus 1 will be described.

(X-ray inspection)

The X-ray inspection apparatus 1 obtains a vertical (2D) image of the semiconductor device 70 using the X-ray detector 14 and inspects the semiconductor device 70. The X-ray inspection apparatus 1 also obtains a stereoscopic (3D) image of the semiconductor device 70 using the X-ray detector 15 and inspects the semiconductor device 70.

The image processing section 57 of the control section 50 obtains the vertical (2D) image of the semiconductor device 70 by the X-ray detector 14. [ Specifically, the X-ray tube control unit 55 of the control unit 50 controls the X-ray tube 12 to generate X-rays. The motor control unit 51 moves the stage 11 to the side surface of the mounting surface 11a and vertically irradiates the inspection portion of the semiconductor device 70 with X-rays. The image processing 57 then images the detection results by the X-ray detector 14 to obtain a vertical (2D) image of the semiconductor device 70. The semiconductor device 70 can be inspected through this vertical (2D) image.

Further, the image processing unit 57 obtains a stereoscopic (3D) image of the semiconductor device 70 by the X-ray detector 15. In detail, the motor control unit 54 rotates the X-ray detector 14 in the circumferential direction. The motor control units 51 and 52 are provided on the shielding plate 22 and the stage 11 so that the X-ray emitted from the X-ray tube 12 is transmitted through the inspection portion of the semiconductor device 70 in synchronization with the rotation of the X- Control the position. The image processor 57 obtains a plurality of photographs of the semiconductor device 70 taken by the X-ray detector 14 in various directions. Then, the image processing unit 57 performs a reconstruction calculation process according to various images and generates a stereoscopic (3D) image of the semiconductor device 70. The semiconductor device 70 can be inspected (CT inspection) by this three-dimensional (3D) image.

The X-ray detectors 14 and 15 according to the present embodiment are direct conversion type detectors. In addition, there is an indirect conversion type detector as the X-ray detector. Direct conversion detector has higher resolution than indirect conversion type X-ray detector. Therefore, by using the direct conversion X-ray detectors 14 and 15, the semiconductor device 70 can be measured with high accuracy.

The X-ray detectors 14 and 15 according to the present embodiment are photon counting type X-ray detectors. The X-ray detectors 14 and 15 are hardly affected by noise.

6 (b) shows the waveform of the comparative example. The comparative example shows, for example, an output signal by the integral method in the indirect conversion type X-ray detector. An indirectly converted X-ray detector converts X-rays from a scintillator to light of a different wavelength and converts the light into charges in an array-type photodiode. The integral type X-ray detector mainly stores the converted charge in a capacitor and outputs the accumulated charge of the capacitor as an output signal. In this case, the capacitor outputs a high output signal (indicated by a solid line) in comparison with an output signal (represented by a dotted line) of X-rays incident to accumulate noise. Therefore, the X-ray detection amount includes an error (error due to noise).

Also, in the method of accumulating electric charge, the charge generated in the X-ray detector differs depending on the material and thickness of the substance to be transmitted through the X-ray, and an image called an artifact is generated. Therefore, the boundary of the measurement object may be blurred due to the influence of the artifact, and high measurement accuracy may not be obtained.

6 (a) shows the change of the output signal with time. The X-ray detectors (14, 15) include a conversion film for converting incident X-rays into electric charges and a processing unit for outputting electric charges as photon numbers. The output signal represents the voltage signal from which the converted charge is collected. The level of this voltage signal corresponds to the energy of the incident X-rays. The voltage signal also includes noise. The processing section identifies and calculates an output signal (voltage signal) exceeding a threshold value indicated by a dotted line by energy. By appropriately setting the threshold value, the influence of the noise on the count value can be suppressed. The X-ray energy can also be obtained by connecting the intensity of the output signal (voltage signal) and the count. Therefore, by using the photon counting type X-ray detectors 14 and 15, it is possible to detect an amount of incident X-ray energy that does not include an error due to noise, that is, the incident X-ray energy can be detected with high accuracy.

As described above, according to the present embodiment, the following effects can be obtained.

(1) The X-ray inspection apparatus 1 includes an X-ray detector 12 disposed on the periphery of a position opposite to the X-ray tube 12 with the stage 11 on which the semiconductor device 70 is mounted, (15). The X-ray detector 15 is a direct conversion type X-ray detector that outputs a count value obtained by counting X-ray photons of an incident X-ray. The image processing unit 57 reconstructs the transmission image of the semiconductor device 70 photographed by the first X-ray detector 15 to generate a stereoscopic (3D) image. The image processing unit 57 obtains the X-ray energy transmitted through the semiconductor device 70 according to the count value output from the X-ray detector 15 and calculates the X-ray energy of the night image 72 in the three- . The image processor 57 measures the height of the bumps 72, that is, the spacing of the semiconductor chips, based on the extracted image data.

The direct conversion type detector has higher resolution than the indirect conversion type X-ray detector. Therefore, by using the direct conversion type X-ray detector 15, the semiconductor device 70 can be measured with high accuracy. The X-ray detector 15 according to the present embodiment is a photon counting type X-ray detector. Since the X-ray detector 15 is not affected by noise, the semiconductor device 70 can be measured with high accuracy.

(2) The X-ray transmitted through the semiconductor device 70 has an energy spectrum according to the energy absorption characteristics of the transmitted substance. Therefore, it is possible to discriminate the substance transmitted through the X-ray according to the energy spectrum. Therefore, the X-ray transmitted through the measurement target substance is discriminated, and the image data of the measurement object can be easily extracted from the three-dimensional image according to the discrimination result. The measurement object can be measured more easily than the image data of the extracted measurement object.

(3) The shielding unit 20 includes a filter 21. Deterioration of the characteristics of the semiconductor device 70 can be suppressed more than setting the wavelength region of the X-rays irradiated to the semiconductor device 70 by the filter 21. [

(4) The X-ray inspection apparatus 1 includes an X-ray detector 14 disposed at a position facing the X-ray tube 12 with the stage 11 on which the semiconductor device 70 is mounted. A stereoscopic (3D) image of the semiconductor device 70 can be obtained by the X-ray detector 15. A vertical (2D) image of the semiconductor device 70 is also obtained by the X-ray detector 14. Therefore, the X-ray inspection apparatus 1 of the present embodiment can obtain a vertical image and a three-dimensional image in one equipment, and thus it is possible to reduce the working efficiency and the working time.

The above-described embodiments are carried out in the following manner.

Although the semiconductor device 70 is referred to as an inspected object in the above embodiments, an intermediate substrate (interposer) formed of an inspected object including a substance having a different energy spectrum from the transmitted X-rays, such as a silicon substrate, and a semiconductor device are implemented Or an X-ray inspection apparatus for inspecting a substrate or the like.

1 ... X-ray inspection apparatus, 11 ... stage, 12 ... X-ray tube, 14,15 ... X-ray detector, 57 ... image processing unit, 70 ... semiconductor device as an inspected object.

Claims (5)

A stage having a loading surface on which a measured object is loaded;
An X-ray tube for irradiating the object to be measured with X-rays;
A first X-ray detector for detecting X-rays transmitted through the object to be measured; And
And an image processing unit for generating a three-dimensional image of the object to be measured and measuring an object to be measured,
The first X-ray detector corresponds to a direct conversion type X-ray detector that outputs a count value obtained by counting X-ray photons of an incident X-ray, and is arranged around the position opposite to the X-ray tube with the stage interposed therebetween , The detection surface on which the X-ray is incident is arranged so as to be inclined with respect to the axial direction of the X-ray irradiated from the X-ray tube,
Wherein the image processing unit generates the stereoscopic image by reconstructing a transmission image of the object to be measured taken by the first X-ray detector, and based on the count value output from the first X-ray detector, Ray image of the object to be measured is extracted from the stereoscopic image based on the energy, and the object to be measured is measured according to the extracted image data. The apparatus according to claim 1, wherein the first X-ray detector has detection pixels arranged in a matrix form,
Wherein the image processing unit obtains a peak value of energy of an X-ray incident on each of the detection pixels, compares the peak value with a threshold value set according to an object to be measured, and discriminates a substance transmitted through the incident X- Inspection device. The image processing apparatus according to claim 2, wherein the image processing unit extracts image data of a measurement object from the stereoscopic images according to a determination result based on a peak value and a threshold value, and measures an object to be measured according to the extracted image data X-ray inspection apparatus. 4. The semiconductor device according to any one of claims 1 to 3, wherein the measured object comprises a plurality of semiconductor chips stacked as semiconductor devices,
Wherein the image processing unit extracts image data of bumps between the semiconductor chips as an object of measurement and measures the interval of the semiconductor chips based on the image data of the bumps. 5. The X-ray CT scanner according to any one of claims 1 to 4, further comprising: an X-ray detector which is disposed at a position opposite to the X-ray tube with the stage interposed therebetween, And a second X-ray detector to which X-rays are incident.

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