KR20180088262A - Novel amine-based compound and organic light emitting device comprising the same - Google Patents
Novel amine-based compound and organic light emitting device comprising the same Download PDFInfo
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- KR20180088262A KR20180088262A KR1020170149677A KR20170149677A KR20180088262A KR 20180088262 A KR20180088262 A KR 20180088262A KR 1020170149677 A KR1020170149677 A KR 1020170149677A KR 20170149677 A KR20170149677 A KR 20170149677A KR 20180088262 A KR20180088262 A KR 20180088262A
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 98
- 150000001412 amines Chemical class 0.000 title abstract 2
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- 230000032258 transport Effects 0.000 claims description 12
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- 150000002367 halogens Chemical class 0.000 claims description 10
- 125000000623 heterocyclic group Chemical group 0.000 claims description 10
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- 125000000753 cycloalkyl group Chemical group 0.000 claims description 9
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- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 1
- 125000000842 isoxazolyl group Chemical group 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- YGNUPJXMDOFFDO-UHFFFAOYSA-N n,4-diphenylaniline Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1NC1=CC=CC=C1 YGNUPJXMDOFFDO-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- VWXSLLOSYCKNCF-UHFFFAOYSA-N n-phenyl-4-(4-phenylphenyl)aniline Chemical compound C=1C=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=CC=1NC1=CC=CC=C1 VWXSLLOSYCKNCF-UHFFFAOYSA-N 0.000 description 1
- KPTRDYONBVUWPD-UHFFFAOYSA-N naphthalen-2-ylboronic acid Chemical compound C1=CC=CC2=CC(B(O)O)=CC=C21 KPTRDYONBVUWPD-UHFFFAOYSA-N 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- 125000004957 naphthylene group Chemical group 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001715 oxadiazolyl group Chemical group 0.000 description 1
- AICOOMRHRUFYCM-ZRRPKQBOSA-N oxazine, 1 Chemical compound C([C@@H]1[C@H](C(C[C@]2(C)[C@@H]([C@H](C)N(C)C)[C@H](O)C[C@]21C)=O)CC1=CC2)C[C@H]1[C@@]1(C)[C@H]2N=C(C(C)C)OC1 AICOOMRHRUFYCM-ZRRPKQBOSA-N 0.000 description 1
- 125000002971 oxazolyl group Chemical group 0.000 description 1
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical group [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 1
- WTLOGKMDQWEFOK-UHFFFAOYSA-N oxolane;triphenylphosphane Chemical compound C1CCOC1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 WTLOGKMDQWEFOK-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
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- 150000002964 pentacenes Chemical class 0.000 description 1
- 125000003538 pentan-3-yl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N perylene Chemical compound C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- FVDOBFPYBSDRKH-UHFFFAOYSA-N perylene-3,4,9,10-tetracarboxylic acid Chemical compound C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O FVDOBFPYBSDRKH-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
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- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 125000004592 phthalazinyl group Chemical group C1(=NN=CC2=CC=CC=C12)* 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- 125000005548 pyrenylene group Chemical group 0.000 description 1
- 125000002098 pyridazinyl group Chemical group 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- JLBRGNFGBDNNSF-UHFFFAOYSA-N tert-butyl(dimethyl)borane Chemical group CB(C)C(C)(C)C JLBRGNFGBDNNSF-UHFFFAOYSA-N 0.000 description 1
- 125000001113 thiadiazolyl group Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- KWQNQSDKCINQQP-UHFFFAOYSA-K tri(quinolin-8-yloxy)gallane Chemical compound C1=CN=C2C(O[Ga](OC=3C4=NC=CC=C4C=CC=3)OC=3C4=NC=CC=C4C=CC=3)=CC=CC2=C1 KWQNQSDKCINQQP-UHFFFAOYSA-K 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical group CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical group CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- MXSVLWZRHLXFKH-UHFFFAOYSA-N triphenylborane Chemical group C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1 MXSVLWZRHLXFKH-UHFFFAOYSA-N 0.000 description 1
- 125000003960 triphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C3=CC=CC=C3C12)* 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
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Abstract
Description
본 발명은 신규한 아민계 화합물 및 이를 포함하는 유기 발광 소자에 관한 것이다.The present invention relates to a novel amine compound and an organic light emitting device comprising the same.
일반적으로 유기 발광 현상이란 유기 물질을 이용하여 전기에너지를 빛에너지로 전환시켜주는 현상을 말한다. 유기 발광 현상을 이용하는 유기 발광 소자는 넓은 시야각, 우수한 콘트라스트, 빠른 응답 시간을 가지며, 휘도, 구동 전압 및 응답 속도 특성이 우수하여 많은 연구가 진행되고 있다. In general, organic light emission phenomenon refers to a phenomenon in which an organic material is used to convert electric energy into light energy. The organic light emitting device using the organic light emitting phenomenon has a wide viewing angle, excellent contrast, fast response time, excellent characteristics of luminance, driving voltage and response speed, and much research has been conducted.
유기 발광 소자는 일반적으로 양극과 음극 및 상기 양극과 음극 사이에 유기물층을 포함하는 구조를 가진다. 상기 유기물층은 유기 발광 소자의 효율과 안정성을 높이기 위하여 각기 다른 물질로 구성된 다층의 구조로 이루어진 경우가 많으며, 예컨대 정공주입층, 정공수송층, 발광층, 전자수송층, 전자주입층 등으로 이루어질 수 있다. 이러한 유기 발광 소자의 구조에서 두 전극 사이에 전압을 걸어주게 되면 양극에서는 정공이, 음극에서는 전자가 유기물층에 주입되게 되고, 주입된 정공과 전자가 만났을 때 엑시톤(exciton)이 형성되며, 이 엑시톤이 다시 바닥상태로 떨어질 때 빛이 나게 된다. The organic light emitting device generally has a structure including an anode and a cathode, and an organic layer between the anode and the cathode. In order to increase the efficiency and stability of the organic light emitting device, the organic material layer may have a multilayer structure composed of different materials. For example, the organic material layer may include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. When a voltage is applied between the two electrodes in the structure of such an organic light emitting device, holes are injected in the anode, electrons are injected into the organic layer in the cathode, excitons are formed when injected holes and electrons meet, When it falls back to the ground state, the light comes out.
상기와 같은 유기 발광 소자에 사용되는 유기물에 대하여 새로운 재료의 개발이 지속적으로 요구되고 있다.There is a continuing need for the development of new materials for the organic materials used in such organic light emitting devices.
본 발명은 신규한 아민계 화합물 및 이를 포함하는 유기 발광 소자에 관한 것이다.The present invention relates to a novel amine compound and an organic light emitting device comprising the same.
본 발명은 하기 화학식 1로 표시되는 화합물을 제공한다:The present invention provides a compound represented by the following formula (1): < EMI ID =
[화학식 1][Chemical Formula 1]
상기 화학식 1에서, In Formula 1,
X는 O 또는 S이고,X is O or S,
A 및 B는 각각 독립적으로, 수소; 치환 또는 비치환된 C6-60 아릴; 또는 치환 또는 비치환된 N, O 및 S로 구성되는 군으로부터 선택되는 헤테로원자를 1개 내지 3개 포함하는 C2-60 헤테로아릴이되, A 및 B가 모두 수소인 경우는 제외하고,A and B each independently represent hydrogen; Substituted or unsubstituted C 6-60 aryl; Or substituted or unsubstituted C 2-60 heteroaryl containing 1 to 3 heteroatoms selected from the group consisting of N, O and S, except that when A and B are both hydrogen,
L은 단일 결합; 치환 또는 비치환된 C6-60 아릴렌; 또는 치환 또는 비치환된 O, N, Si 및 S로 구성되는 군으로부터 선택되는 헤테로원자를 1개 이상을 포함하는 C2-60 헤테로아릴렌이고,L is a single bond; Substituted or unsubstituted C 6-60 arylene; Or substituted or unsubstituted C 2-60 heteroarylene containing at least one heteroatom selected from the group consisting of O, N, Si and S,
Ar1 및 Ar2는 각각 독립적으로, 치환 또는 비치환된 C6-60 아릴; 또는 치환 또는 비치환된 N, O 및 S로 구성되는 군으로부터 선택되는 헤테로원자를 1개 내지 3개 포함하는 C2-60 헤테로아릴이고, Ar 1 and Ar 2 are each independently a substituted or unsubstituted C 6-60 aryl; Or substituted or unsubstituted C 2-60 heteroaryl containing 1 to 3 heteroatoms selected from the group consisting of N, O and S,
R1은 수소; 중수소; 할로겐; 시아노; 니트로; 아미노; 치환 또는 비치환된 C1-60 알킬; 치환 또는 비치환된 C1-60 할로알킬; 치환 또는 비치환된 C1-60 알콕시; 치환 또는 비치환된 C1-60 할로알콕시; 치환 또는 비치환된 C3-60 사이클로알킬; 치환 또는 비치환된 C2-60 알케닐; 치환 또는 비치환된 C6-60 아릴; 치환 또는 비치환된 C6-60 아릴옥시; 또는 치환 또는 비치환된 N, O 및 S로 구성되는 군으로부터 선택되는 헤테로원자를 1개 이상 포함하는 C2-60 헤테로고리기이고,R 1 is hydrogen; heavy hydrogen; halogen; Cyano; Nitro; Amino; Substituted or unsubstituted C 1-6 alkyl; Substituted or unsubstituted C 1-6 haloalkyl; Substituted or unsubstituted C 1-60 alkoxy; Substituted or unsubstituted C 1-60 haloalkoxy; Substituted or unsubstituted C 3-60 cycloalkyl; Substituted or unsubstituted C 2-60 alkenyl; Substituted or unsubstituted C 6-60 aryl; Substituted or unsubstituted C 6-60 aryloxy; Or a substituted or unsubstituted C 2-60 heterocyclic group containing at least one heteroatom selected from the group consisting of N, O and S,
a1은 0 내지 4의 정수이다.a1 is an integer of 0 to 4;
또한, 본 발명은 제1 전극; 상기 제1 전극과 대향하여 구비된 제2 전극; 및 상기 제1 전극과 상기 제2 전극 사이에 구비된 1층 이상의 유기물층을 포함하는 유기 발광 소자로서, 상기 유기물층 중 1층 이상은 상기 화학식 1로 표시되는 화합물을 포함하는, 유기 발광 소자를 제공한다.The present invention also provides a plasma display panel comprising: a first electrode; A second electrode facing the first electrode; And at least one organic compound layer disposed between the first electrode and the second electrode, wherein at least one of the organic compound layers includes a compound represented by
상술한 화학식 1로 표시되는 화합물은 유기 발광 소자의 유기물층의 재료로서 사용될 수 있으며, 유기 발광 소자에서 효율의 향상, 낮은 구동전압 및/또는 수명 특성을 향상시킬 수 있다.The compound represented by the general formula (1) can be used as a material of an organic material layer of an organic light emitting device and can improve the efficiency, the driving voltage and / or the lifetime of the organic light emitting device.
도 1은 기판(1), 양극(2), 발광층(3), 음극(4)으로 이루어진 유기 발광 소자의 예를 도시한 것이다.
도 2는 기판(1), 양극(2), 정공주입층(5), 정공수송층(6), 발광층(7), 전자수송층(8) 및 음극(4)로 이루어진 유기 발광 소자의 예를 도시한 것이다.Fig. 1 shows an example of an organic light-emitting device comprising a
2 shows an example of an organic light emitting element comprising a
이하, 본 발명의 이해를 돕기 위하여 보다 상세히 설명한다.Hereinafter, the present invention will be described in detail in order to facilitate understanding of the present invention.
본 명세서에서, 는 다른 치환기에 연결되는 결합을 의미하고, 단일 결합은 L로 표시되는 부분에 별도의 원자가 존재하지 않은 경우를 의미한다. In the present specification, Means a bond connected to another substituent, and a single bond means a case where no separate atom exists in a portion represented by L. [
본 명세서에서 "치환 또는 비치환된" 이라는 용어는 중수소; 할로겐기; 시아노기; 니트로기; 히드록시기; 카보닐기; 에스테르기; 이미드기; 아미노기; 포스핀옥사이드기; 알콕시기; 아릴옥시기; 알킬티옥시기; 아릴티옥시기; 알킬술폭시기; 아릴술폭시기; 실릴기; 붕소기; 알킬기; 사이클로알킬기; 알케닐기; 아릴기; 아르알킬기; 아르알케닐기; 알킬아릴기; 알킬아민기; 아랄킬아민기; 헤테로아릴아민기; 아릴아민기; 아릴포스핀기; 또는 N, O 및 S 원자 중 1개 이상을 포함하는 헤테로고리기로 이루어진 군에서 선택된 1개 이상의 치환기로 치환 또는 비치환되거나, 상기 예시된 치환기 중 2 이상의 치환기가 연결된 치환 또는 비치환된 것을 의미한다. 예컨대, "2 이상의 치환기가 연결된 치환기"는 바이페닐기일 수 있다. 즉, 바이페닐기는 아릴기일 수도 있고, 2개의 페닐기가 연결된 치환기로 해석될 수도 있다.As used herein, the term " substituted or unsubstituted " A halogen group; Cyano; A nitro group; A hydroxy group; A carbonyl group; An ester group; Imide; An amino group; Phosphine oxide groups; An alkoxy group; An aryloxy group; An alkyloxy group; Arylthioxy group; An alkylsulfoxy group; Arylsulfoxy group; Silyl group; Boron group; An alkyl group; Cycloalkyl groups; An alkenyl group; An aryl group; Aralkyl groups; An aralkenyl group; An alkylaryl group; An alkylamine group; An aralkylamine group; A heteroarylamine group; An arylamine group; Arylphosphine groups; Or a heterocyclic group containing at least one of N, O and S atoms, or a substituted or unsubstituted group in which at least two of the above-exemplified substituents are connected to each other . For example, " a substituent to which at least two substituents are connected " may be a biphenyl group. That is, the biphenyl group may be an aryl group, or may be interpreted as a substituent in which two phenyl groups are connected.
본 명세서에서 카보닐기의 탄소수는 특별히 한정되지 않으나, 탄소수 1 내지 40인 것이 바람직하다. 구체적으로 하기와 같은 구조의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the carbon number of the carbonyl group is not particularly limited, but it is preferably 1 to 40 carbon atoms. Specifically, it may be a compound having the following structure, but is not limited thereto.
본 명세서에 있어서, 에스테르기는 에스테르기의 산소가 탄소수 1 내지 25의 직쇄, 분지쇄 또는 고리쇄 알킬기 또는 탄소수 6 내지 25의 아릴기로 치환될 수 있다. 구체적으로, 하기 구조식의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the ester group may be substituted with a straight-chain, branched or cyclic alkyl group having 1 to 25 carbon atoms or an aryl group having 6 to 25 carbon atoms in the ester group. Specifically, it may be a compound of the following structural formula, but is not limited thereto.
본 명세서에 있어서, 이미드기의 탄소수는 특별히 한정되지 않으나, 탄소수 1 내지 25인 것이 바람직하다. 구체적으로 하기와 같은 구조의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the number of carbon atoms of the imide group is not particularly limited, but is preferably 1 to 25 carbon atoms. Specifically, it may be a compound having the following structure, but is not limited thereto.
본 명세서에 있어서, 실릴기는 구체적으로 트리메틸실릴기, 트리에틸실릴기, t-부틸디메틸실릴기, 비닐디메틸실릴기, 프로필디메틸실릴기, 트리페닐실릴기, 디페닐실릴기, 페닐실릴기 등이 있으나 이에 한정되지 않는다. In the present specification, the silyl group specifically includes a trimethylsilyl group, a triethylsilyl group, a t-butyldimethylsilyl group, a vinyldimethylsilyl group, a propyldimethylsilyl group, a triphenylsilyl group, a diphenylsilyl group, But are not limited thereto.
본 명세서에 있어서, 붕소기는 구체적으로 트리메틸붕소기, 트리에틸붕소기, t-부틸디메틸붕소기, 트리페닐붕소기, 페닐붕소기 등이 있으나 이에 한정되지 않는다.In the present specification, the boron group specifically includes, but is not limited to, a trimethylboron group, a triethylboron group, a t-butyldimethylboron group, a triphenylboron group, and a phenylboron group.
본 명세서에 있어서, 할로겐기의 예로는 불소, 염소, 브롬 또는 요오드가 있다.In the present specification, examples of the halogen group include fluorine, chlorine, bromine or iodine.
본 명세서에 있어서, 상기 알킬기는 직쇄 또는 분지쇄일 수 있고, 탄소수는 특별히 한정되지 않으나 1 내지 40인 것이 바람직하다. 일 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 20이다. 또 하나의 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 10이다. 또 하나의 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 6이다. 알킬기의 구체적인 예로는 메틸, 에틸, 프로필, n-프로필, 이소프로필, 부틸, n-부틸, 이소부틸, tert-부틸, sec-부틸, 1-메틸-부틸, 1-에틸-부틸, 펜틸, n-펜틸, 이소펜틸, 네오펜틸, tert-펜틸, 헥실, n-헥실, 1-메틸펜틸, 2-메틸펜틸, 4-메틸-2-펜틸, 3,3-디메틸부틸, 2-에틸부틸, 헵틸, n-헵틸, 1-메틸헥실, 사이클로펜틸메틸, 사이클로헥틸메틸, 옥틸, n-옥틸, tert-옥틸, 1-메틸헵틸, 2-에틸헥실, 2-프로필펜틸, n-노닐, 2,2-디메틸헵틸, 1-에틸-프로필, 1,1-디메틸-프로필, 이소헥실, 2-메틸펜틸, 4-메틸헥실, 5-메틸헥실 등이 있으나, 이들에 한정되지 않는다.In the present specification, the alkyl group may be linear or branched, and the number of carbon atoms is not particularly limited, but is preferably 1 to 40. According to one embodiment, the alkyl group has 1 to 20 carbon atoms. According to another embodiment, the alkyl group has 1 to 10 carbon atoms. According to another embodiment, the alkyl group has 1 to 6 carbon atoms. Specific examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a n-butyl group, an isobutyl group, a tert-butyl group, But are not limited to, pentyl, isopentyl, neopentyl, tert-pentyl, hexyl, n-hexyl, 1-methylpentyl, , n-heptyl, 1-methylhexyl, cyclopentylmethyl, cyclohexylmethyl, octyl, n-octyl, tert-octyl, 1-methylheptyl, But are not limited to, dimethylheptyl, 1-ethyl-propyl, 1,1-dimethyl-propyl, isohexyl, 2-methylpentyl, 4-methylhexyl and 5-methylhexyl.
본 명세서에 있어서, 상기 알케닐기는 직쇄 또는 분지쇄일 수 있고, 탄소수는 특별히 한정되지 않으나, 2 내지 40인 것이 바람직하다. 일 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 20이다. 또 하나의 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 10이다. 또 하나의 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 6이다. 구체적인 예로는 비닐, 1-프로페닐, 이소프로페닐, 1-부테닐, 2-부테닐, 3-부테닐, 1-펜테닐, 2-펜테닐, 3-펜테닐, 3-메틸-1-부테닐, 1,3-부타디에닐, 알릴, 1-페닐비닐-1-일, 2-페닐비닐-1-일, 2,2-디페닐비닐-1-일, 2-페닐-2-(나프틸-1-일)비닐-1-일, 2,2-비스(디페닐-1-일)비닐-1-일, 스틸베닐기, 스티레닐기 등이 있으나 이들에 한정되지 않는다.In the present specification, the alkenyl group may be straight-chain or branched, and the number of carbon atoms is not particularly limited, but is preferably 2 to 40. According to one embodiment, the alkenyl group has 2 to 20 carbon atoms. According to another embodiment, the alkenyl group has 2 to 10 carbon atoms. According to another embodiment, the alkenyl group has 2 to 6 carbon atoms. Specific examples include vinyl, 1-propenyl, isopropenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1-pentenyl, Butenyl, allyl, 1-phenylvinyl-1-yl, 2-phenylvinyl-1-yl, (Diphenyl-1-yl) vinyl-1-yl, stilbenyl, stilenyl, and the like.
본 명세서에 있어서, 사이클로알킬기는 특별히 한정되지 않으나, 탄소수 3 내지 60인 것이 바람직하며, 일 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 30이다. 또 하나의 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 20이다. 또 하나의 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 6이다. 구체적으로 사이클로프로필, 사이클로부틸, 사이클로펜틸, 3-메틸사이클로펜틸, 2,3-디메틸사이클로펜틸, 사이클로헥실, 3-메틸사이클로헥실, 4-메틸사이클로헥실, 2,3-디메틸사이클로헥실, 3,4,5-트리메틸사이클로헥실, 4-tert-부틸사이클로헥실, 사이클로헵틸, 사이클로옥틸 등이 있으나, 이에 한정되지 않는다.In the present specification, the cycloalkyl group is not particularly limited, but preferably has 3 to 60 carbon atoms. According to one embodiment, the cycloalkyl group has 3 to 30 carbon atoms. According to another embodiment, the cycloalkyl group has 3 to 20 carbon atoms. According to another embodiment, the cycloalkyl group has 3 to 6 carbon atoms. Specific examples include cyclopropyl, cyclobutyl, cyclopentyl, 3-methylcyclopentyl, 2,3-dimethylcyclopentyl, cyclohexyl, 3-methylcyclohexyl, 4-methylcyclohexyl, 2,3- 4,5-trimethylcyclohexyl, 4-tert-butylcyclohexyl, cycloheptyl, cyclooctyl, and the like, but are not limited thereto.
본 명세서에 있어서, 아릴기는 특별히 한정되지 않으나 탄소수 6 내지 60인 것이 바람직하며, 단환식 아릴기 또는 다환식 아릴기일 수 있다. 일 실시상태에 따르면, 상기 아릴기의 탄소수는 6 내지 30이다. 일 실시상태에 따르면, 상기 아릴기의 탄소수는 6 내지 20이다. 상기 아릴기가 단환식 아릴기로는 페닐기, 바이페닐기, 터페닐기 등이 될 수 있으나, 이에 한정되는 것은 아니다. 상기 다환식 아릴기로는 나프틸기, 안트라세닐기, 페난트릴기, 파이레닐기, 페릴레닐기, 크라이세닐기, 플루오레닐기 등이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the aryl group is not particularly limited, but preferably has 6 to 60 carbon atoms, and may be a monocyclic aryl group or a polycyclic aryl group. According to one embodiment, the aryl group has 6 to 30 carbon atoms. According to one embodiment, the aryl group has 6 to 20 carbon atoms. The aryl group may be a phenyl group, a biphenyl group, a terphenyl group or the like as the monocyclic aryl group, but is not limited thereto. Examples of the polycyclic aryl group include, but are not limited to, a naphthyl group, an anthracenyl group, a phenanthryl group, a pyrenyl group, a perylenyl group, a klycenyl group and a fluorenyl group.
본 명세서에 있어서, 플루오레닐기는 치환될 수 있고, 치환기 2개가 서로 결합하여 스피로 구조를 형성할 수 있다. 상기 플루오레닐기가 치환되는 경우, 등이 될 수 있다. 다만, 이에 한정되는 것은 아니다.In the present specification, a fluorenyl group may be substituted, and two substituents may be bonded to each other to form a spiro structure. When the fluorenyl group is substituted, And the like. However, the present invention is not limited thereto.
본 명세서에 있어서, 헤테로고리기는 이종 원소로 O, N, Si 및 S 중 1개 이상을 포함하는 헤테로고리기로서, 탄소수는 특별히 한정되지 않으나, 탄소수 2 내지 60인 것이 바람직하다. 헤테로고리기의 예로는 티오펜기, 퓨란기, 피롤기, 이미다졸기, 티아졸기, 옥사졸기, 옥사디아졸기, 트리아졸기, 피리딜기, 비피리딜기, 피리미딜기, 트리아진기, 트리아졸기, 아크리딜기, 피리다진기, 피라지닐기, 퀴놀리닐기, 퀴나졸린기, 퀴녹살리닐기, 프탈라지닐기, 피리도 피리미디닐기, 피리도 피라지닐기, 피라지노 피라지닐기, 이소퀴놀린기, 인돌기, 카바졸기, 벤조옥사졸기, 벤조이미다졸기, 벤조티아졸기, 벤조카바졸기, 벤조티오펜기, 디벤조티오펜기, 벤조퓨라닐기, 페난쓰롤린기(phenanthroline), 티아졸릴기, 이소옥사졸릴기, 옥사디아졸릴기, 티아디아졸릴기, 벤조티아졸릴기, 페노티아지닐기 및 디벤조퓨라닐기 등이 있으나, 이들에만 한정되는 것은 아니다.In the present specification, the heterocyclic group is a hetero ring group containing at least one of O, N, Si and S as a hetero atom, and the number of carbon atoms is not particularly limited, but is preferably 2 to 60 carbon atoms. Examples of the heterocyclic group include a thiophene group, a furane group, a furyl group, an imidazole group, a thiazole group, an oxazole group, an oxadiazole group, a triazole group, a pyridyl group, a bipyridyl group, a pyrimidyl group, A pyridazinyl group, a pyrazinopyrazinyl group, an isoquinoline group, a pyrazinyl group, a pyrazinyl group, a pyrazinyl group, a pyrazinyl group, a quinolinyl group, a quinazolinyl group, a quinoxalinyl group, a phthalazinyl group, a pyridopyrimidinyl group, , An indole group, a carbazole group, a benzoxazole group, a benzoimidazole group, a benzothiazole group, a benzocarbazole group, a benzothiophene group, a dibenzothiophene group, a benzofuranyl group, a phenanthroline, An isoxazolyl group, an oxadiazolyl group, a thiadiazolyl group, a benzothiazolyl group, a phenothiazinyl group, and a dibenzofuranyl group, but is not limited thereto.
본 명세서에 있어서, 아르알킬기, 아르알케닐기, 알킬아릴기, 아릴아민기 중의 아릴기는 전술한 아릴기의 예시와 같다. 본 명세서에 있어서, 아르알킬기, 알킬아릴기, 알킬아민기 중 알킬기는 전술한 알킬기의 예시와 같다. 본 명세서에 있어서, 헤테로아릴아민 중 헤테로아릴은 전술한 헤테로고리기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 아르알케닐기 중 알케닐기는 전술한 알케닐기의 예시와 같다. 본 명세서에 있어서, 아릴렌은 2가기인 것을 제외하고는 전술한 아릴기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 헤테로아릴렌은 2가기인 것을 제외하고는 전술한 헤테로고리기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 탄화수소 고리는 1가기가 아니고, 2개의 치환기가 결합하여 형성한 것을 제외하고는 전술한 아릴기 또는 사이클로알킬기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 헤테로고리는 1가기가 아니고, 2개의 치환기가 결합하여 형성한 것을 제외하고는 전술한 헤테로고리기에 관한 설명이 적용될 수 있다.In the present specification, the aryl group in the aralkyl group, the aralkenyl group, the alkylaryl group and the arylamine group is the same as the aforementioned aryl group. In the present specification, the alkyl group in the aralkyl group, the alkylaryl group, and the alkylamine group is the same as the alkyl group described above. In the present specification, the heteroaryl among the heteroarylamines can be applied to the aforementioned heterocyclic group. In the present specification, the alkenyl group in the aralkenyl group is the same as the above-mentioned alkenyl group. In the present specification, the description of the aryl group described above can be applied except that arylene is a divalent group. In the present specification, the description of the above-mentioned heterocyclic group can be applied except that the heteroarylene is a divalent group. In the present specification, the description of the above-mentioned aryl group or cycloalkyl group can be applied except that the hydrocarbon ring is not a monovalent group and two substituents are bonded to each other. In the present specification, the description of the above-mentioned heterocyclic group can be applied except that the heterocyclic ring is not a monovalent group and two substituents are bonded to each other.
한편, 본 발명은 상기 화학식 1로 표시되는 화합물을 제공한다. The present invention also provides a compound represented by the above formula (1).
상기 화학식 1에서, A 및 B는 각각 독립적으로, 수소, 또는 하기로 구성되는 군으로부터 선택되는 어느 하나일 수 있다. 즉, 상기 화학식 1에서, A 및 B 중 하나가 수소이고 나머지 하나가 하기로 구성되는 군으로부터 선택되는 어느 하나이거나, A 및 B 모두가 하기로 구성되는 군으로부터 선택되는 어느 하나일 수 있다:In
상기에서,In the above,
Y1은 O, S, 또는 CZ4Z5이고,Y 1 is O, S, or CZ 4 Z 5 ,
Z1 내지 Z5는 각각 독립적으로, 수소; 중수소; 할로겐; 시아노; 니트로; 아미노; C1-20 알킬; C1-20 할로알킬; C6-20 아릴; O 또는 S의 헤테로원자를 1개 이상 포함하는 C2-20 헤테로아릴이고,Z 1 to Z 5 each independently represent hydrogen; heavy hydrogen; halogen; Cyano; Nitro; Amino; C 1-20 alkyl; C 1-20 haloalkyl; C 6-20 aryl; Lt ; / RTI > heteroaryl containing one or more heteroatoms of O or S,
n1 내지 n3는 각각 독립적으로, 0 내지 3의 정수이다.n1 to n3 each independently represent an integer of 0 to 3;
예를 들어, A 및 B는 각각 독립적으로, 수소, 또는 하기로 구성되는 군으로부터 선택되는 어느 하나일 수 있다:For example, A and B may each independently be hydrogen, or any one selected from the group consisting of:
구체적으로, 상기 화학식 1에서, A 및 B가 모두 수소인 화합물을 전자억제층 또는 정공수송층으로 사용하여 제조된 유기 발광 소자의 경우, 효율이 10% 이상, 수명은 30% 이상 떨어지는 한계가 있다. 이에 따라, 상기 화학식 1에서, A 및 B가 각각 독립적으로, 수소, 또는 상기로 구성되는 군으로부터 선택되는 어느 하나를 만족할 경우, 소자의 효율을 높여주는 동시에 안정성이 크게 증가할 수 있다.Specifically, in the organic light-emitting device manufactured by using a compound in which A and B are both hydrogen as the electron suppressing layer or the hole transporting layer, the efficiency is 10% or more and the lifetime is limited to 30% or more. Accordingly, when A and B are independently selected from the group consisting of hydrogen and the group consisting of the above-mentioned formula (1), the efficiency of the device can be increased and the stability can be greatly increased.
또한, L은 단일 결합, 치환 또는 비치환된 페닐렌, 치환 또는 비치환된 바이페닐렌, 치환 또는 비치환된 나프틸렌, 치환 또는 비치환된 페난트레닐렌, 치환 또는 비치환된 안트라세닐렌, 치환 또는 비치환된 플루오란테닐렌, 치환 또는 비치환된 트리페닐레닐렌, 치환 또는 비치환된 파이레닐렌, 치환 또는 비치환된 카바졸일렌, 치환 또는 비치환된 플루오레닐렌, 또는 치환 또는 비치환된 스파이로-플루오레닐렌일 수 있다.L is a single bond, substituted or unsubstituted phenylene, substituted or unsubstituted biphenylene, substituted or unsubstituted naphthylene, substituted or unsubstituted phenanthrenylene, substituted or unsubstituted anthracenylene, Substituted or unsubstituted fluorenylene, substituted or unsubstituted fluorenylene, substituted or unsubstituted fluorenenylene, substituted or unsubstituted triphenylenylene, substituted or unsubstituted pyrenylene, substituted or unsubstituted carbazolylene, substituted or unsubstituted fluorenylene, It may be an unsubstituted spiro-fluorenylene.
예를 들어, L은 단일 결합, 또는 하기로 구성되는 군으로부터 선택되는 어느 하나일 수 있다:For example, L may be a single bond, or any one selected from the group consisting of:
구체적으로 예를 들어, L은 단일 결합, 또는 하기로 구성되는 군으로부터 선택되는 어느 하나일 수 있다:Specifically, for example, L may be a single bond, or any one selected from the group consisting of:
상기 L이 하기와 같이 긴 사슬을 가질 경우, 상기 화학식1에서 코어와 아릴아민기 사이의 거리가 너무 멀어짐에 따라, 유기 발광 소자의 특성이 크게 나빠질 수 있다:When the L has a long chain as described below, the distance between the core and the arylamine group in
또한, Ar1 및 Ar2는 각각 독립적으로, 치환 또는 비치환된 C6-20 아릴; 또는 치환 또는 비치환된 O 또는 S의 헤테로원자를 1개 내지 3개 포함하는 C2-20 헤테로아릴일 수 있다.Ar 1 and Ar 2 are each independently a substituted or unsubstituted C 6-20 aryl; Or a C 2-20 heteroaryl containing 1 to 3 hetero atoms of substituted or unsubstituted O or S.
예를 들어, Ar1 및 Ar2는 각각 독립적으로, 하기로 구성되는 군으로부터 선택되는 어느 하나일 수 있다:For example, Ar 1 and Ar 2 may each independently be selected from the group consisting of:
상기에서,In the above,
Y2는 O, S, 또는 CZ14Z15이고,Y 2 is O, S, or CZ 14 Z 15 ,
Z11 내지 Z15는 각각 독립적으로, 수소; 중수소; 할로겐; 시아노; 니트로; 아미노; 실릴; C1-20 알킬; C1-20 할로알킬; C6-20 아릴; O 또는 S의 헤테로원자를 1개 이상 포함하는 C2-20 헤테로아릴이되, Z14 및 Z15는 서로 연결되어 단환 또는 다환의 고리를 형성할 수 있고, Z 11 to Z 15 each independently represent hydrogen; heavy hydrogen; halogen; Cyano; Nitro; Amino; Silyl; C 1-20 alkyl; C 1-20 haloalkyl; C 6-20 aryl; O or are a C 2-20 heteroaryl group containing one or more heteroatoms of S, Z 14 and Z 15 may combine to form a monocyclic or polycyclic ring are connected to each other,
m1 내지 m3는 각각 독립적으로, 0 내지 3의 정수이다.m1 to m3 each independently represent an integer of 0 to 3;
이때, Z11 내지 Z13은 각각 독립적으로, 수소, 중수소, 할로겐, 시아노, 트리메틸실릴, 메틸, tert-부틸, 페닐, 나프틸, 트리페닐레닐, 디벤조퓨라닐, 또는 디벤조티오페닐이고,Z 11 to Z 13 are each independently selected from the group consisting of hydrogen, deuterium, halogen, cyano, trimethylsilyl, methyl, tert-butyl, phenyl, naphthyl, triphenylenyl, dibenzofuranyl or dibenzothiophenyl ,
Z14 및 Z15는 각각 독립적으로, 메틸이거나, 또는 서로 연결되어 단환 또는 다환의 고리를 형성하고, Z < 14 > and Z < 15 > are each independently methyl, or are connected to each other to form a monocyclic or polycyclic ring,
m1 내지 m3는 각각 독립적으로, 0, 또는 1이다. m1 to m3 each independently represent 0 or 1;
구체적으로 예를 들어, Ar1 및 Ar2는 각각 독립적으로, 하기로 구성되는 군으로부터 선택되는 어느 하나일 수 있다:Specifically, for example, Ar 1 and Ar 2 each independently may be any one selected from the group consisting of:
또한, R1은 수소; 중수소; 할로겐; 시아노; 니트로; C1-20 알킬; 또는 C6-20 아릴일 수 있다.R < 1 > is hydrogen; heavy hydrogen; halogen; Cyano; Nitro; C 1-20 alkyl; Or C 6-20 aryl.
예를 들어, R1은 수소, 중수소, 할로겐, 시아노, 니트로, 메틸, 또는 페닐일 수 있고, a1은 0 또는 1일 수 있다.For example, R 1 can be hydrogen, deuterium, halogen, cyano, nitro, methyl, or phenyl, and a 1 can be 0 or 1.
이때, a1은 R1의 개수를 나타낸 것으로서, a1이 2 이상일 경우, 2 이상의 R1은 서로 동일하거나 상이할 수 있다. n1 내지 n3 및 m1 내지 m3에 대한 설명은 상기 a1에 대한 설명 및 상기 화학식 1의 구조를 참조하여 이해될 수 있다.Here, a1 represents the number of R 1 , and when a 1 is 2 or more, two or more R 1 s may be the same or different from each other. n1 to n3 and m1 to m3 can be understood with reference to the description of a1 and the structure of the above formula (1).
한편, 상기 화합물은 하기 화학식 1A 또는 1B로 표시될 수 있다:On the other hand, the compound may be represented by the following formula (1A) or (1B):
[화학식 1A]≪ EMI ID =
[화학식 1B]≪ RTI ID = 0.0 &
상기 화학식 1A 및 1B 에서,In the above formulas 1A and 1B,
X, A, B, L, Ar1 및 Ar2에 대한 설명은 상기 화학식 1에서 정의한 바와 같다.X, A, B, L, Ar < 1 > and Ar < 2 >
예를 들어, 상기 화합물은 하기 화합물로 구성되는 군으로부터 선택되는 어느 하나일 수 있다:For example, the compound may be any one selected from the group consisting of the following compounds:
상기 화학식 1로 표시되는 화합물은, 디벤조퓨란/디벤조티오펜 코어의 특정 위치에 A 또는 B, 및 아릴아민 치환기가 연결된 구조를 가짐으로써, 이를 이용한 유기 발광 소자는 고효율, 저 구동 전압, 고휘도 및 장수명 등을 가질 수 있다. The compound represented by
한편, 상기 화학식 1A로 표시되는 화합물은 일례로 하기 반응식 1과 같은 제조 방법으로 제조할 수 있고, 상기 화학식 1B로 표시되는 화합물은 일례로 하기 반응식 2와 같은 제조 방법으로 제조할 수 있다. The compound represented by the formula (1A) can be prepared, for example, according to the following
[반응식 1][Reaction Scheme 1]
[반응식 2][Reaction Scheme 2]
상기 반응식 1 및 2 에서, X, A, B, L, Ar1 및 Ar2에 대한 설명은 상기 화학식 1에서 정의한 바와 같다.In the
상기 화학식 1로 표시되는 화합물은 상기 반응식 1 및 2를 참고하여 제조하고자 하는 화합물의 구조에 맞추어 출발 물질을 적절히 대체하여 제조할 수 있다. The compound represented by the formula (1) can be prepared by appropriately substituting the starting material according to the structure of the compound to be prepared with reference to the
한편, 본 발명은 상기 화학식 1로 표시되는 화합물을 포함하는 유기 발광 소자를 제공한다. 일례로, 본 발명은 제1 전극; 상기 제1 전극과 대향하여 구비된 제2 전극; 및 상기 제1 전극과 상기 제2 전극 사이에 구비된 1층 이상의 유기물층을 포함하는 유기 발광 소자로서, 상기 유기물층 중 1층 이상은 상기 화학식 1로 표시되는 화합물을 포함하는, 유기 발광 소자를 제공한다. Meanwhile, the present invention provides an organic light emitting device comprising the compound represented by
상기 유기물층은 정공주입층, 정공수송층, 또는 정공 주입과 수송을 동시에 하는 층을 포함할 수 있다.The organic material layer may include a hole injecting layer, a hole transporting layer, or a layer simultaneously injecting and transporting holes.
또한, 상기 유기물층은 발광층을 포함할 수 있고, 상기 발광층은 상기 화학식 1로 표시되는 화합물을 포함할 수 있다.In addition, the organic layer may include a light emitting layer, and the light emitting layer may include a compound represented by the general formula (1).
또한, 상기 전자수송층, 전자주입층, 또는 전자수송 및 전자주입을 동시에 하는 층을 포함할 수 있다.Further, the electron transport layer, the electron injection layer, or the layer that simultaneously performs electron transport and electron injection may be included.
또한, 상기 유기 발광 소자는 상기 유기층 외에도, 상기 정공 수송층과 상기 발광층 사이에 위치하는 전자 차단층(Electron blocking layer: EBL) 및/또는 상기 발광층과 상기 전자 수송층 사이에 위치하는 정공 차단층(Hole blocking layer: HBL)을 더 포함할 수 있다. 그리고, 상기 전자 차단층과 상기 정공 차단층은 각각 발광층과 인접하는 유기물층일 수 있다.In addition to the organic layer, the organic light emitting diode may further include an electron blocking layer (EBL) disposed between the hole transport layer and the light emitting layer and / or a hole blocking layer between the emission layer and the electron transport layer, layer: HBL). The electron blocking layer and the hole blocking layer may be organic layers adjacent to the light emitting layer, respectively.
이때, 상기 화학식 1로 표시되는 화합물은 상기 정공 수송층 및/또는 상기 전자 차단층에 포함될 수 있다.At this time, the compound represented by
본 발명의 유기 발광 소자의 유기물층 은 단층 구조로 이루어질 수도 있으나, 2층 이상의 유기물층이 적층된 다층 구조로 이루어질 수 있다. 예컨대, 본 발명의 유기 발광 소자는 유기물층 으로서 정공주입층, 정공수송층, 발광층, 전자수송층, 전자주입층 등을 포함하는 구조를 가질 수 있다. 그러나 유기 발광 소자의 구조는 이에 한정되지 않고 더 적은 수의 유기층을 포함할 수 있다.The organic material layer of the organic light emitting device of the present invention may have a single layer structure, but may have a multilayer structure in which two or more organic material layers are stacked. For example, the organic light emitting device of the present invention may have a structure including a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injecting layer as an organic material layer. However, the structure of the organic light emitting device is not limited thereto and may include a smaller number of organic layers.
본 발명의 유기 발광 소자의 유기물 층은 단층 구조로 이루어질 수도 있으나, 2층 이상의 유기물층이 적층된 다층 구조로 이루어질 수 있다. 예컨대, 본 발명의 유기 발광 소자는 유기물 층으로서 발광층 이외에, 상기 제1전극과 상기 발광층 사이의 정공주입층 및 정공수송층, 및 상기 발광층과 상기 제2전극 사이의 전자수송층 및 전자주입층을 더 포함하는 구조를 가질 수 있다. 그러나 유기 발광 소자의 구조는 이에 한정되지 않고 더 적은 수 또는 더 많은 수의 유기층을 포함할 수 있다.The organic material layer of the organic light emitting device of the present invention may have a single layer structure, but may have a multilayer structure in which two or more organic material layers are stacked. For example, in the organic light emitting device of the present invention, in addition to the light emitting layer as the organic material layer, a hole injecting layer and a hole transporting layer between the first electrode and the light emitting layer, and an electron transporting layer and an electron injecting layer between the light emitting layer and the second electrode are further included . ≪ / RTI > However, the structure of the organic light emitting device is not limited thereto, and may include fewer or more organic layers.
또한, 본 발명에 따른 유기 발광 소자는, 기판 상에 양극, 1층 이상의 유기물층 및 음극이 순차적으로 적층된 구조(normal type)의 유기 발광 소자일 수 있다. 또한, 본 발명에 따른 유기 발광 소자는 기판 상에 음극, 1층 이상의 유기물층 및 양극이 순차적으로 적층된 역방향 구조(inverted type)의 유기 발광 소자일 수 있다. 예컨대, 본 발명의 일실시예에 따른 유기 발광 소자의 구조는 도 1 및 2에 예시되어 있다.The organic light emitting device according to the present invention may be a normal type organic light emitting device in which an anode, at least one organic layer, and a cathode are sequentially stacked on a substrate. In addition, the organic light emitting device according to the present invention may be an inverted type organic light emitting device in which an anode, one or more organic compound layers and an anode are sequentially stacked on a substrate. For example, the structure of an organic light emitting diode according to an embodiment of the present invention is illustrated in FIGS.
도 1은 기판(1), 양극(2), 발광층(3), 음극(4)으로 이루어진 유기 발광 소자의 예를 도시한 것이다. 이와 같은 구조에 있어서, 상기 화학식 1로 표시되는 화합물은 상기 발광층에 포함될 수 있다. Fig. 1 shows an example of an organic light-emitting device comprising a
도 2는 기판(1), 양극(2), 정공주입층(5), 정공수송층(6), 발광층(7), 전자수송층(8) 및 음극(4)로 이루어진 유기 발광 소자의 예를 도시한 것이다. 이와 같은 구조에 있어서, 상기 화학식 1로 표시되는 화합물은 상기 정공주입층, 정공수송층, 발광층 및 전자수송층 중 1층 이상에 포함될 수 있다. 2 shows an example of an organic light emitting element comprising a
본 발명에 따른 유기 발광 소자는, 상기 유기물층 중 1층 이상이 상기 화학식 1로 표시되는 화합물을 포함하는 것을 제외하고는 당 기술분야에 알려져 있는 재료와 방법으로 제조될 수 있다. 또한, 상기 유기 발광 소자가 복수개의 유기물층을 포함하는 경우, 상기 유기물층은 동일한 물질 또는 다른 물질로 형성될 수 있다. The organic light emitting device according to the present invention may be manufactured by materials and methods known in the art, except that at least one of the organic layers includes the compound represented by
예컨대, 본 발명에 따른 유기 발광 소자는 기판 상에 제1 전극, 유기물층 및 제2 전극을 순차적으로 적층시켜 제조할 수 있다. 이때, 스퍼터링법(sputtering)이나 전자빔 증발법(e-beam evaporation)과 같은 PVD(physical Vapor Deposition)방법을 이용하여, 기판 상에 금속 또는 전도성을 가지는 금속 산화물 또는 이들의 합금을 증착시켜 양극을 형성하고, 그 위에 정공 주입층, 정공 수송층, 발광층 및 전자수송층을 포함하는 유기물층을 형성한 후, 그 위에 음극으로 사용할 수 있는 물질을 증착시켜 제조할 수 있다. 이와 같은 방법 외에도, 기판 상에 음극 물질부터 유기물층, 양극 물질을 차례로 증착시켜 유기 발광 소자를 만들 수 있다. For example, the organic light emitting device according to the present invention can be manufactured by sequentially laminating a first electrode, an organic material layer, and a second electrode on a substrate. At this time, a metal or a metal oxide having conductivity or an alloy thereof is deposited on the substrate using a PVD (physical vapor deposition) method such as sputtering or e-beam evaporation to form an anode Forming an organic material layer including a hole injection layer, a hole transporting layer, a light emitting layer and an electron transporting layer on the organic material layer, and then depositing a material usable as a cathode on the organic material layer. In addition to such a method, an organic light emitting device can be formed by sequentially depositing a cathode material, an organic material layer, and a cathode material on a substrate.
또한, 상기 화학식 1로 표시되는 화합물은 유기 발광 소자의 제조시 진공 증착법 뿐만 아니라 용액 도포법에 의하여 유기물층으로 형성될 수 있다. 여기서, 용액 도포법이라 함은 스핀 코팅, 딥코팅, 닥터 블레이딩, 잉크젯 프린팅, 스크린 프린팅, 스프레이법, 롤 코팅 등을 의미하지만, 이들만으로 한정되는 것은 아니다.The compound represented by
이와 같은 방법 외에도, 기판 상에 음극 물질로부터 유기물층, 양극 물질을 차례로 증착시켜 유기 발광 소자를 제조할 수 있다(WO 2003/012890). 다만, 제조 방법이 이에 한정되는 것은 아니다. In addition to such a method, an organic light emitting device can be manufactured by sequentially depositing an organic material layer and a cathode material from a cathode material on a substrate (WO 2003/012890). However, the manufacturing method is not limited thereto.
일례로, 상기 제1 전극은 양극이고, 상기 제2 전극은 음극이거나, 또는 상기 제1 전극은 음극이고, 상기 제2 전극은 양극이다.In one example, the first electrode is an anode, the second electrode is a cathode, or the first electrode is a cathode and the second electrode is a cathode.
상기 양극 물질로는 통상 유기물층으로 정공 주입이 원활할 수 있도록 일함수가 큰 물질이 바람직하다. 상기 양극 물질의 구체적인 예로는 바나듐, 크롬, 구리, 아연, 금과 같은 금속 또는 이들의 합금; 아연 산화물, 인듐 산화물, 인듐주석 산화물(ITO), 인듐아연 산화물(IZO)과 같은 금속 산화물; ZnO:Al 또는 SNO2:Sb와 같은 금속과 산화물의 조합; 폴리(3-메틸티오펜), 폴리[3,4-(에틸렌-1,2-디옥시)티오펜](PEDOT), 폴리피롤 및 폴리아닐린과 같은 전도성 고분자 등이 있으나, 이들에만 한정되는 것은 아니다. As the anode material, a material having a large work function is preferably used so that hole injection can be smoothly conducted into the organic material layer. Specific examples of the positive electrode material include metals such as vanadium, chromium, copper, zinc, and gold, or alloys thereof; Metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO); ZnO: Al or SNO 2: a combination of a metal and an oxide such as Sb; Conductive polymers such as poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDOT), polypyrrole and polyaniline.
상기 음극 물질로는 통상 유기물층으로 전자 주입이 용이하도록 일함수가 작은 물질인 것이 바람직하다. 상기 음극 물질의 구체적인 예로는 마그네슘, 칼슘, 나트륨, 칼륨, 티타늄, 인듐, 이트륨, 리튬, 가돌리늄, 알루미늄, 은, 주석 및 납과 같은 금속 또는 이들의 합금; LiF/Al 또는 LiO2/Al과 같은 다층 구조 물질 등이 있으나, 이들에만 한정되는 것은 아니다. The negative electrode material is preferably a material having a small work function to facilitate electron injection into the organic material layer. Specific examples of the negative electrode material include metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin and lead or alloys thereof; Layer structure materials such as LiF / Al or LiO 2 / Al, but are not limited thereto.
상기 정공주입층은 전극으로부터 정공을 주입하는 층으로, 정공 주입 물질로는 정공을 수송하는 능력을 가져 양극에서의 정공 주입효과, 발광층 또는 발광재료에 대하여 우수한 정공 주입 효과를 갖고, 발광층에서 생성된 여기자의 전자주입층 또는 전자주입재료에의 이동을 방지하며, 또한, 박막 형성 능력이 우수한 화합물이 바람직하다. 정공 주입 물질의 HOMO(highest occupied molecular orbital)가 양극 물질의 일함수와 주변 유기물층의 HOMO 사이인 것이 바람직하다. 정공 주입 물질의 구체적인 예로는 금속 포피린(porphyrin), 올리고티오펜, 아릴아민 계열의 유기물, 헥사니트릴헥사아자트리페닐렌 계열의 유기물, 퀴나크리돈(quinacridone)계열의 유기물, 페릴렌(perylene) 계열의 유기물, 안트라퀴논 및 폴리아닐린과 폴리티오펜 계열의 전도성 고분자 등이 있으나, 이들에만 한정 되는 것은 아니다. The hole injecting layer is a layer for injecting holes from an electrode. The hole injecting material has a hole injecting effect, and has a hole injecting effect on the light emitting layer or a light emitting material. A compound which prevents the migration of excitons to the electron injecting layer or the electron injecting material and is also excellent in the thin film forming ability is preferable. It is preferable that the highest occupied molecular orbital (HOMO) of the hole injecting material be between the work function of the anode material and the HOMO of the surrounding organic layer. Specific examples of the hole injecting material include metal porphyrin, oligothiophene, arylamine-based organic materials, hexanitrile hexaazatriphenylene-based organic materials, quinacridone-based organic materials, and perylene- , Anthraquinone, polyaniline and polythiophene-based conductive polymers, but the present invention is not limited thereto.
상기 정공수송층은 정공주입층으로부터 정공을 수취하여 발광층까지 정공을 수송하는 층으로, 정공 수송 물질로는 양극이나 정공 주입층으로부터 정공을 수송받아 발광층으로 옮겨줄 수 있는 물질로 정공에 대한 이동성이 큰 물질이 적합하다. 구체적인 예로는 아릴아민 계열의 유기물, 전도성 고분자, 및 공액 부분과 비공액 부분이 함께 있는 블록 공중합체 등이 있으나, 이들에만 한정되는 것은 아니다. The hole transport layer is a layer that transports holes from the hole injection layer to the light emitting layer. The hole transport material is a material capable of transporting holes from the anode or the hole injection layer to the light emitting layer. The material is suitable. Specific examples include arylamine-based organic materials, conductive polymers, and block copolymers having a conjugated portion and a non-conjugated portion together, but are not limited thereto.
상기 발광 물질로는 정공 수송층과 전자 수송층으로부터 정공과 전자를 각각 수송받아 결합시킴으로써 가시광선 영역의 빛을 낼 수 있는 물질로서, 형광이나 인광에 대한 양자 효율이 좋은 물질이 바람직하다. 구체적인 예로 8-히드록시-퀴놀린 알루미늄 착물(Alq3); 카르바졸 계열 화합물; 이량체화 스티릴(dimerized styryl) 화합물; BAlq; 10-히드록시벤조 퀴놀린-금속 화합물; 벤족사졸, 벤즈티아졸 및 벤즈이미다졸 계열의 화합물; 폴리(p-페닐렌비닐렌)(PPV) 계열의 고분자; 스피로(spiro) 화합물; 폴리플루오렌, 루브렌 등이 있으나, 이들에만 한정되는 것은 아니다. The light emitting material is preferably a material capable of emitting light in the visible light region by transporting and receiving holes and electrons from the hole transporting layer and the electron transporting layer, respectively, and having good quantum efficiency for fluorescence or phosphorescence. Specific examples include 8-hydroxy-quinoline aluminum complex (Alq 3 ); Carbazole-based compounds; Dimerized styryl compounds; BAlq; 10-hydroxybenzoquinoline-metal compounds; Compounds of the benzoxazole, benzothiazole and benzimidazole series; Polymers of poly (p-phenylenevinylene) (PPV) series; Spiro compounds; Polyfluorene, rubrene, and the like, but are not limited thereto.
상기 발광층은 상술한 바와 같이 호스트 재료 및 도펀트 재료를 포함할 수 있다. 호스트 재료는 축합 방향족환 유도체 또는 헤테로환 함유 화합물 등을 더 포함할 수 있다. 구체적으로 축합 방향족환 유도체로는 안트라센 유도체, 피렌 유도체, 나프탈렌 유도체, 펜타센 유도체, 페난트렌 화합물, 플루오란텐 화합물 등이 있고, 헤테로환 함유 화합물로는 카바졸 유도체, 디벤조퓨란 유도체, 래더형 퓨란 화합물, 피리미딘 유도체 등이 있으나, 이에 한정되지 않는다. The light emitting layer may include a host material and a dopant material as described above. The host material may further include a condensed aromatic ring derivative or a heterocyclic compound. Specific examples of the condensed aromatic ring derivatives include anthracene derivatives, pyrene derivatives, naphthalene derivatives, pentacene derivatives, phenanthrene compounds, and fluoranthene compounds. Examples of the heterocycle-containing compounds include carbazole derivatives, dibenzofuran derivatives, Furan compounds, pyrimidine derivatives, and the like, but are not limited thereto.
도펀트 재료로는 방향족 아민 유도체, 스트릴아민 화합물, 붕소 착체, 플루오란텐 화합물, 금속 착체 등이 있다. 구체적으로 방향족 아민 유도체로는 치환 또는 비치환된 아릴아미노기를 갖는 축합 방향족환 유도체로서, 아릴아미노기를 갖는 피렌, 안트라센, 크리센, 페리플란텐 등이 있으며, 스티릴아민 화합물로는 치환 또는 비치환된 아릴아민에 적어도 1개의 아릴비닐기가 치환되어 있는 화합물로, 아릴기, 실릴기, 알킬기, 사이클로알킬기 및 아릴아미노기로 이루어진 군에서 1 또는 2 이상 선택되는 치환기가 치환 또는 비치환된다. 구체적으로 스티릴아민, 스티릴디아민, 스티릴트리아민, 스티릴테트라아민 등이 있으나, 이에 한정되지 않는다. 또한, 금속 착체로는 이리듐 착체, 백금 착체 등이 있으나, 이에 한정되지 않는다.Examples of the dopant material include aromatic amine derivatives, styrylamine compounds, boron complexes, fluoranthene compounds, and metal complexes. Specific examples of the aromatic amine derivatives include condensed aromatic ring derivatives having substituted or unsubstituted arylamino groups, and examples thereof include pyrene, anthracene, chrysene, and peripherrhene having an arylamino group. Examples of the styrylamine compound include substituted or unsubstituted Wherein at least one aryl vinyl group is substituted with at least one aryl vinyl group, and at least one substituent selected from the group consisting of an aryl group, a silyl group, an alkyl group, a cycloalkyl group and an arylamino group is substituted or unsubstituted. Specific examples thereof include, but are not limited to, styrylamine, styryldiamine, styryltriamine, styryltetraamine, and the like. Examples of the metal complex include iridium complex, platinum complex, and the like, but are not limited thereto.
상기 전자수송층은 전자주입층으로부터 전자를 수취하여 발광층까지 전자를 수송하는 층으로, 전자 수송 물질로는 음극으로부터 전자를 잘 주입 받아 발광층으로 옮겨줄 수 있는 물질로서, 전자에 대한 이동성이 큰 물질이 적합하다. 구체적인 예로는 8-히드록시퀴놀린의 Al 착물; Alq3를 포함한 착물; 유기 라디칼 화합물; 히드록시플라본-금속 착물 등이 있으나, 이들에만 한정되는 것은 아니다. 전자 수송층은 종래기술에 따라 사용된 바와 같이 임의의 원하는 캐소드 물질과 함께 사용할 수 있다. 특히, 적절한 캐소드 물질의 예는 낮은 일함수를 가지고 알루미늄층 또는 실버층이 뒤따르는 통상적인 물질이다. 구체적으로 세슘, 바륨, 칼슘, 이테르븀 및 사마륨이고, 각 경우 알루미늄 층 또는 실버층이 뒤따른다.The electron transporting layer is a layer that receives electrons from the electron injecting layer and transports electrons to the light emitting layer. The electron transporting material is a material capable of transferring electrons from the cathode well to the light emitting layer. Suitable. Specific examples include an Al complex of 8-hydroxyquinoline; Complexes containing Alq 3 ; Organic radical compounds; Hydroxyflavone-metal complexes, and the like, but are not limited thereto. The electron transporting layer can be used with any desired cathode material as used according to the prior art. In particular, an example of a suitable cathode material is a conventional material having a low work function followed by an aluminum layer or a silver layer. Specifically cesium, barium, calcium, ytterbium and samarium, in each case followed by an aluminum layer or a silver layer.
상기 전자주입층은 전극으로부터 전자를 주입하는 층으로, 전자를 수송하는 능력을 갖고, 음극으로부터의 전자 주입 효과, 발광층 또는 발광 재료에 대하여 우수한 전자주입 효과를 가지며, 발광층에서 생성된 여기자의 정공주입층에의 이동을 방지하고, 또한, 박막형성능력이 우수한 화합물이 바람직하다. 구체적으로는 플루오레논, 안트라퀴노다이메탄, 다이페노퀴논, 티오피란 다이옥사이드, 옥사졸, 옥사다이아졸, 트리아졸, 이미다졸, 페릴렌테트라카복실산, 프레오레닐리덴 메탄, 안트론 등과 그들의 유도체, 금속 착체 화합물 및 질소 함유 5원환 유도체 등이 있으나, 이에 한정되지 않는다. The electron injection layer is a layer for injecting electrons from the electrode. The electron injection layer has an ability to transport electrons, has an electron injection effect from the cathode, and has an excellent electron injection effect with respect to the light emitting layer or the light emitting material. A compound which prevents migration to a layer and is excellent in a thin film forming ability is preferable. Specific examples thereof include fluorenone, anthraquinodimethane, diphenoquinone, thiopyran dioxide, oxazole, oxadiazole, triazole, imidazole, perylenetetracarboxylic acid, preorenylidene methane, A nitrogen-containing 5-membered ring derivative, and the like, but are not limited thereto.
상기 금속 착체 화합물로서는 8-하이드록시퀴놀리나토 리튬, 비스(8-하이드록시퀴놀리나토)아연, 비스(8-하이드록시퀴놀리나토)구리, 비스(8-하이드록시퀴놀리나토)망간, 트리스(8-하이드록시퀴놀리나토)알루미늄, 트리스(2-메틸-8-하이드록시퀴놀리나토)알루미늄, 트리스(8-하이드록시퀴놀리나토)갈륨, 비스(10-하이드록시벤조[h]퀴놀리나토)베릴륨, 비스(10-하이드록시벤조[h]퀴놀리나토)아연, 비스(2-메틸-8-퀴놀리나토)클로로갈륨, 비스(2-메틸-8-퀴놀리나토)(o-크레졸라토)갈륨, 비스(2-메틸-8-퀴놀리나토)(1-나프톨라토)알루미늄, 비스(2-메틸-8-퀴놀리나토)(2-나프톨라토)갈륨 등이 있으나, 이에 한정되지 않는다.Examples of the metal complex compound include 8-hydroxyquinolinato lithium, bis (8-hydroxyquinolinato) zinc, bis (8-hydroxyquinolinato) copper, bis (8- Tris (8-hydroxyquinolinato) aluminum, tris (2-methyl-8-hydroxyquinolinato) aluminum, tris (8- hydroxyquinolinato) gallium, bis (10- Quinolinato) beryllium, bis (10-hydroxybenzo [h] quinolinato) zinc, bis (2-methyl-8- quinolinato) chlorogallium, bis (2-methyl-8-quinolinato) (2-naphtholato) gallium, and the like, But is not limited thereto.
본 발명에 따른 유기 발광 소자는 사용되는 재료에 따라 전면 발광형, 후면 발광형 또는 양면 발광형일 수 있다.The organic light emitting device according to the present invention may be a front emission type, a back emission type, or a both-sided emission type, depending on the material used.
또한, 상기 화학식 1로 표시되는 화합물은 유기 발광 소자 외에도 유기 태양 전지 또는 유기 트랜지스터에 포함될 수 있다.In addition, the compound represented by
상기 화학식 1로 표시되는 화합물 및 이를 포함하는 유기 발광 소자의 제조는 이하 실시예에서 구체적으로 설명한다. 그러나 하기 실시예는 본 발명을 예시하기 위한 것이며, 본 발명의 범위가 이들에 의하여 한정되는 것은 아니다.The preparation of the compound represented by
제조예 A: 중간체 화합물 A의 제조Production Example A: Preparation of Intermediate Compound A
제조예 B: 중간체 화합물 B의 제조Production Example B: Preparation of Intermediate Compound B
제조예 C: 중간체 화합물 C의 제조Production Example C: Preparation of Intermediate Compound C
제조예 D: 중간체 화합물 D의 제조Production Example D: Preparation of Intermediate Compound D
제조예 E: 중간체 화합물 E의 제조Preparation Example E: Preparation of intermediate compound E
제조예 F: 중간체 화합물 F의 제조Preparation Example F: Preparation of Intermediate Compound F
제조예 G: 중간체 화합물 G의 제조Preparation Example G: Preparation of Intermediate Compound G
제조예 H: 중간체 화합물 H의 제조Production Example H: Preparation of Intermediate Compound H
제조예 I: 중간체 화합물 I의 제조Preparation Example I: Preparation of Intermediate Compound I
제조예 J: 중간체 화합물 J의 제조Production Example J: Preparation of Intermediate Compound J
제조예 K: 중간체 화합물 K의 제조Preparation Example K: Preparation of Intermediate Compound K
제조예 L: 중간체 화합물 L의 제조Production Example L: Preparation of Intermediate Compound L
제조예 M: 중간체 화합물 M의 제조Preparation Example M: Preparation of Intermediate Compound M
제조예 1: 화합물 1의 제조Production Example 1: Preparation of
[화합물 1] [Compound 1]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A(7.56g, 31.11mmol), di([1,1'-biphenyl]-4-yl)amine(10.99g, 34.22mmol)을 Xylene 220ml에 완전히 녹인 후 Caesium carbonate(12.13g, 37.33mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.08g, 0.16mmol)을 넣은 후 3 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 filter하여 base를 제거한 후에 Xylene을 감압농축 시키고 에틸아세테이트 180ml으로 재결정하여 상기 화합물 1(12.46g, 수율: 71%)을 제조하였다.Compound A (7.56 g, 31.11 mmol) and di ([1,1'-biphenyl] -4-yl) amine (10.99 g, 34.22 mmol) were completely dissolved in 220 ml of xylene in a 500 ml round- (12.13 g, 37.33 mmol) was added, and Bis (tri- tert- butylphosphine) palladium (0) (0.08 g, 0.16 mmol) was added and the mixture was heated with stirring for 3 hours. The temperature was lowered to room temperature, and the base was removed by filtration. The xylene was concentrated under reduced pressure and recrystallized from ethyl acetate (180 ml) to give Compound 1 (12.46 g, yield: 71%).
MS[M+H]+= 564MS [M + H] < + > = 564
제조예 2: 화합물 2의 제조Production Example 2: Preparation of
[화합물 2] [Compound 2]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A(8.22g, 33.83mmol), N-([1,1'-biphenyl]-4-yl)-9,9-dimethyl-9H-fluoren-2-amine(13.43g, 37.21mmol)을 Xylene 250ml에 완전히 녹인 후 Caesium carbonate(13.19g, 40.59mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.09g, 0.17mmol)을 넣은 후 2 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 filter하여 base를 제거한 후에 Xylene을 감압농축 시키고 에틸아세테이트 130ml으로 재결정하여 상기 화합물 2(10.45g, 수율: 51%)를 제조하였다.Compound A (8.22 g, 33.83 mmol), N - ([1,1'-biphenyl] -4-yl) -9,9-dimethyl-9H-fluoren- g, 37.21 mmol) was dissolved in 250 ml of xylene, followed by the addition of Caesium carbonate (13.19 g, 40.59 mmol) and bis (tri- tert- butylphosphine) palladium (0) (0.09 g, 0.17 mmol) Followed by heating and stirring. The temperature was lowered to room temperature, and the base was removed by filtration. The xylene was concentrated under reduced pressure and recrystallized from ethyl acetate (130 ml) to obtain Compound 2 (10.45 g, yield: 51%).
MS[M+H]+= 604MS [M + H] < + > = 604
제조예 3: 화합물 3의 제조Production Example 3: Preparation of
[화합물 3] [Compound 3]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A(6.73g, 27.70mmol), N-(4-(dibenzo[b,d]furan-4-yl)phenyl)-9,9-dimethyl-9H-fluoren-2-amine(13.74g, 30.47mmol)을 Xylene 300ml에 완전히 녹인 후 Caesium carbonate(10.80g, 33.23mmol)를 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.07g, 0.14mmol)을 넣은 후 6 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 filter하여 base를 제거한 후에 Xylene을 감압농축 시키고 테트라하이드로퓨란 260ml으로 재결정하여 상기 화합물 3(13.29g, 수율: 69%)을 제조하였다.Compound A (6.73 g, 27.70 mmol), N- (4- (dibenzo [b, d] furan-4-yl) phenyl) -9,9-dimethyl-9H- -amine (13.74g, 30.47mmol) was completely dissolved in 300ml of xylene and then Caesium carbonate (10.80g, 33.23mmol) was added and bis (tri- tert- butylphosphine) palladium (0) (0.07g, 0.14mmol) The mixture was heated and stirred for 6 hours. The temperature was lowered to room temperature, and the base was removed by filtration. The xylene was concentrated under reduced pressure, and recrystallized from 260 ml of tetrahydrofuran to obtain Compound 3 (13.29 g, yield 69%).
MS[M+H]+= 694MS [M + H] < + > = 694
제조예 4: 화합물 4의 제조Production Example 4: Preparation of
[화합물 4] [Compound 4]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 B(4.96g, 15.55mmol), di([1,1'-biphenyl]-4-yl)amine(5.49g, 17.10mmol)을 Xylene 260ml에 완전히 녹인 후 Caesium carbonate(6.06g, 18.66mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.04g, 0.08mmol)을 넣은 후 6 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 filter하여 base를 제거한 후에 Xylene을 감압농축 시키고 에틸아세테이트 220ml으로 재결정하여 상기 화합물 4(7.19g, 수율: 67%)를 제조하였다.(4.96 g, 15.55 mmol) and di ([1,1'-biphenyl] -4-yl) amine (5.49 g, 17.10 mmol) were completely dissolved in 260 ml of xylene in a 500 ml round- (6.06 g, 18.66 mmol) was added, and Bis (tri- tert- butylphosphine) palladium (0) (0.04 g, 0.08 mmol) was added and the mixture was heated with stirring for 6 hours. The temperature was lowered to room temperature, and the base was removed by filtration. The xylene was concentrated under reduced pressure, and recrystallized from ethyl acetate (220 ml) to obtain the above compound 4 (7.19 g, yield 67%).
MS[M+H]+= 640MS [M + H] < + > = 640
제조예 5: 화합물 5의 제조Production Example 5: Preparation of
[화합물 5] [Compound 5]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 B(4.96g, 15.55mmol), N-phenyl-[1,1':4',1''-terphenyl]-4-amine(5.49g, 17.10mmol)을 Xylene 260ml에 완전히 녹인 후 Caesium carbonate(6.06g, 18.66mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.04g, 0.08mmol)을 넣은 후 5 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 filter하여 base를 제거한 후에 Xylene을 감압농축 시키고 에틸아세테이트 250ml으로 재결정하여 상기 화합물 5(6.08g, 수율: 56%)를 제조하였다.(4.96 g, 15.55 mmol) and N-phenyl- [1,1 ': 4', 1 "-terphenyl] -4-amine (5.49 g, 17.10 mmol) were added to a 500 ml round- (6.06 g, 18.66 mmol) was added. Bis (tri- tert- butylphosphine) palladium (0) (0.04 g, 0.08 mmol) was added thereto and the mixture was heated with stirring for 5 hours. The temperature was lowered to room temperature, and the base was removed by filtration. The xylene was concentrated under reduced pressure, and recrystallized from ethyl acetate (250 ml) to give Compound 5 (6.08 g, yield: 56%).
MS[M+H]+= 640MS [M + H] < + > = 640
제조예 6: 화합물 6의 제조Preparation Example 6: Preparation of
[화합물 6] [Compound 6]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 C(5.13g, 17.51mmol), di([1,1'-biphenyl]-4-yl)amine(6.18g, 19.26mmol)을 Xylene 190ml에 완전히 녹인 후 Caesium carbonate(6.83g, 21.01mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.04g, 0.09mmol)을 넣은 후 4 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 filter하여 base를 제거한 후에 Xylene을 감압농축 시키고 에틸아세테이트 250ml으로 재결정하여 상기 화합물 6(7.82g, 수율: 73%)을 제조하였다.(5.13 g, 17.51 mmol) and di ([1,1'-biphenyl] -4-yl) amine (6.18 g, 19.26 mmol) were completely dissolved in 190 ml of xylene in a 500 ml round- ( Tert- butylphosphine) palladium (0) (0.04 g, 0.09 mmol) was added thereto, followed by heating and stirring for 4 hours. The temperature was lowered to room temperature, and the base was removed by filtration. The xylene was concentrated under reduced pressure and recrystallized from ethyl acetate (250 ml) to obtain Compound 6 (7.82 g, yield: 73%).
MS[M+H]+= 614MS [M + H] < + > = 614
제조예 7: 화합물 7의 제조Production Example 7: Preparation of
[화합물 7] [Compound 7]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 C(4.29g, 14.64mmol), N-([1,1'-biphenyl]-4-yl)-9,9-dimethyl-9H-fluoren-2-amine(5.81g, 16.11mmol)을 Xylene 280ml에 완전히 녹인 후 Caesium carbonate(5.71g, 17.57mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.04g, 0.07mmol)을 넣은 후 3 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 filter하여 base를 제거한 후에 Xylene을 감압농축 시키고 에틸아세테이트 130ml으로 재결정하여 상기 화합물 7(5.17g, 수율: 58%)을 제조하였다.(4.29 g, 14.64 mmol) and N - ([1,1'-biphenyl] -4-yl) -9,9-dimethyl-9H-fluoren- g, 16.11 mmol) was dissolved in 280 ml of xylene, and then Ca (5.71 g, 17.57 mmol) was added and bis (tri- tert- butylphosphine) palladium (0) (0.04 g, 0.07 mmol) Followed by heating and stirring. The temperature was lowered to room temperature, and the base was removed by filtration. The xylene was concentrated under reduced pressure, and recrystallized from ethyl acetate (130 ml) to obtain Compound 7 (5.17 g, yield: 58%).
MS[M+H]+= 604MS [M + H] < + > = 604
제조예 8: 화합물 8의 제조Production Example 8: Preparation of
[화합물 8] [Compound 8]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 D(7.38g, 15.19mmol), phenylboronic acid(2.13g, 17.46mmol)을 테트라하이드로퓨란 240ml에 완전히 녹인 후 2M 탄산칼륨수용액(120ml)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.62g, 0.58mmol)을 넣은 후 5 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 물 층을 제거하고 무수황산마그네슘으로 건조한 후 감압농축 시키고 에틸아세테이트 250ml로 재결정하여 상기 화합물 8(6.27g, 수율: 73%)을 제조하였다.Compound D (7.38 g, 15.19 mmol) and phenylboronic acid (2.13 g, 17.46 mmol) were completely dissolved in 240 ml of tetrahydrofuran in a 500 ml round-bottomed flask under nitrogen atmosphere, and 2M aqueous potassium carbonate solution (120 ml) (Triphenylphosphine) palladium (0.62 g, 0.58 mmol) was added thereto, followed by heating and stirring for 5 hours. The temperature was lowered to room temperature, the water layer was removed, dried over anhydrous magnesium sulfate, concentrated under reduced pressure, and recrystallized from ethyl acetate (250 ml) to give Compound 8 (6.27 g, yield: 73%).
MS[M+H]+= 564MS [M + H] < + > = 564
제조예 9: 화합물 9의 제조Production Example 9: Preparation of Compound 9
[화합물 9] [Compound 9]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 D(7.38g, 15.19mmol), naphthalen-2-ylboronic acid(2.13g, 17.46mmol)을 테트라하이드로퓨란 280ml에 완전히 녹인 후 2M 탄산칼륨수용액(140ml)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.61g, 0.57mmol)을 넣은 후 4 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 물 층을 제거하고 무수황산마그네슘으로 건조한 후 감압농축 시키고 에틸아세테이트 250ml로 재결정하여 상기 화합물 9(7.01g, 수율: 75%)를 제조하였다.Compound D (7.38 g, 15.19 mmol) and naphthalen-2-ylboronic acid (2.13 g, 17.46 mmol) were dissolved in 280 ml of tetrahydrofuran in a 500 ml round-bottomed flask under nitrogen atmosphere and 2M aqueous potassium carbonate solution (140 ml) , And tetrakis- (triphenylphosphine) palladium (0.61 g, 0.57 mmol) were added thereto, followed by heating and stirring for 4 hours. The temperature was lowered to room temperature, and the water layer was removed. The organic layer was dried over anhydrous magnesium sulfate, concentrated under reduced pressure, and recrystallized from ethyl acetate (250 ml) to give Compound 9 (7.01 g, yield 75%).
MS[M+H]+= 614MS [M + H] < + > = 614
제조예 10: 화합물 10의 제조Production Example 10: Preparation of Compound 10
[화합물 10] [Compound 10]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 E(7.38g, 15.19mmol), phenylboronic acid(2.13g, 17.46mol)을 테트라하이드로퓨란 240ml에 완전히 녹인 후 2M 탄산칼륨수용액(120ml)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.49g, 0.46mmol)을 넣은 후 6 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 물 층을 제거하고 무수황산마그네슘으로 건조한 후 감압농축 시키고 에틸아세테이트 240ml로 재결정하여 상기 화합물 10(8.26g, 수율: 79%)을 제조하였다.Compound E (7.38 g, 15.19 mmol) and phenylboronic acid (2.13 g, 17.46 mol) were completely dissolved in 240 ml of tetrahydrofuran in a 500 ml round bottom flask under a nitrogen atmosphere, and 2M aqueous potassium carbonate solution (120 ml) (Triphenylphosphine) palladium (0.49 g, 0.46 mmol) was added thereto, followed by heating and stirring for 6 hours. The temperature was lowered to room temperature, the water layer was removed, dried over anhydrous magnesium sulfate, concentrated under reduced pressure, and recrystallized from ethyl acetate (240 ml) to obtain Compound 10 (8.26 g, yield: 79%).
MS[M+H]+= 604MS [M + H] < + > = 604
제조예 11: 화합물 11의 제조Production Example 11: Preparation of Compound 11
[화합물 11] [Compound 11]
* *
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 F(7.77g, 13.49mmol), phenylboronic acid(1.89g, 15.51mol)를 테트라하이드로퓨란 200ml에 완전히 녹인 후 2M 탄산칼륨수용액(100ml)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.47g, 0.40mmol)을 넣은 후 6 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 물 층을 제거하고 무수황산마그네슘으로 건조한 후 감압농축 시키고 에틸아세테이트 260ml로 재결정하여 상기 화합물 11(8.26g, 수율: 79%)을 제조하였다.Compound F (7.77 g, 13.49 mmol) and phenylboronic acid (1.89 g, 15.51 mol) were completely dissolved in 200 ml of tetrahydrofuran in a 500 ml round-bottomed flask under nitrogen atmosphere, and 2M potassium carbonate aqueous solution (100 ml) (Triphenylphosphine) palladium (0.47 g, 0.40 mmol) were added thereto, followed by heating and stirring for 6 hours. The temperature was lowered to room temperature, the water layer was removed, dried over anhydrous magnesium sulfate, and concentrated under reduced pressure. The residue was recrystallized from ethyl acetate (260 ml) to obtain the above compound 11 (8.26 g, yield 79%).
MS[M+H]+= 654MS [M + H] < + > = 654
제조예 12: 화합물 12의 제조Production Example 12: Preparation of Compound 12
[화합물 12] [Compound 12]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 G(6.64g, 11.22mmol), (9,9-dimethyl-9H-fluoren-2-yl)boronic acid(3.07g, 12.90mmol)를 테트라하이드로퓨란 240ml에 완전히 녹인 후 2M 탄산칼륨수용액(120ml)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.39g, 0.34mmol)을 넣은 후 4 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 물 층을 제거하고 무수황산마그네슘으로 건조한 후 감압농축 시키고 에틸아세테이트 310ml로 재결정하여 상기 화합물 12(8.26g, 수율: 79%)를 제조하였다.Compound G (6.64 g, 11.22 mmol) and (9,9-dimethyl-9H-fluoren-2-yl) boronic acid (3.07 g, 12.90 mmol) were completely dissolved in 240 ml of tetrahydrofuran in a 500 ml round- Then, 2M aqueous potassium carbonate solution (120 ml) was added, tetrakis- (triphenylphosphine) palladium (0.39 g, 0.34 mmol) was added, and the mixture was heated and stirred for 4 hours. The temperature was lowered to room temperature, the water layer was removed, dried over anhydrous magnesium sulfate, concentrated under reduced pressure, and recrystallized from ethyl acetate (310 ml) to obtain Compound (12) (8.26 g, yield 79%).
MS[M+H]+= 786MS [M + H] < + > = 786
제조예 13: 화합물 13의 제조Production Example 13: Preparation of Compound 13
[화합물 13] [Compound 13]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 H(5.39g, 20.81mmol), N-([1,1'-biphenyl]-4-yl)-[1,1':4',1''-terphenyl]-4-amine(9.17g, 23.10mmol)을 Xylene 250ml에 완전히 녹인 후 Caesium carbonate(8.66g, 27.05mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.11g, 0.21mmol)을 넣은 후 5 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 filter하여 base를 제거한 후에 Xylene을 감압농축 시키고 테트라하이드로퓨란 250ml으로 재결정하여 상기 화합물 13(11.67g, 수율: 70%)을 제조하였다.To a 500 ml round-bottomed flask in a nitrogen atmosphere was added H (5.39 g, 20.81 mmol), N - ([1,1'-biphenyl] -4-yl) - [1,1 ': 4', 1 " -4-amine (9.17 g, 23.10 mmol) was completely dissolved in 250 ml of xylene, followed by the addition of Caesium carbonate (8.66 g, 27.05 mmol) and bis (tri- tert- butylphosphine) palladium (0) (0.11 g, 0.21 mmol) Followed by heating and stirring for 5 hours. After the temperature was lowered to room temperature and the base was removed by filtration, the xylene was concentrated under reduced pressure and recrystallized from 250 ml of tetrahydrofuran to obtain Compound 13 (11.67 g, yield: 70%).
MS[M+H]+= 656MS [M + H] < + > = 656
제조예 14: 화합물 14의 제조Production Example 14: Preparation of Compound 14
[화합물 14] [Compound 14]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 I(7.16g, 20.81mmol), N-phenyl-[1,1'-biphenyl]-4-amine(5.81g, 23.72mmol)을 Xylene 300ml에 완전히 녹인 후 Caesium carbonate(8.89g, 27.79mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.11g, 0.21mmol)을 넣은 후 3 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 filter하여 base를 제거한 후에 Xylene을 감압농축 시키고 테트라하이드로퓨란 200ml으로 재결정하여 상기 화합물 14(8.88g, 수율: 72%)를 제조하였다.Compound I (7.16 g, 20.81 mmol) and N-phenyl- [1,1'-biphenyl] -4-amine (5.81 g, 23.72 mmol) were completely dissolved in 300 ml of xylene in a 500 ml round- ( Tert- butylphosphine) palladium (0) (0.11 g, 0.21 mmol) was added thereto, followed by heating and stirring for 3 hours. The temperature was lowered to room temperature, and the base was removed by filtration. The xylene was concentrated under reduced pressure and recrystallized from 200 ml of tetrahydrofuran to obtain the compound 14 (8.88 g, yield: 72%).
MS[M+H]+= 580MS [M + H] < + > = 580
제조예 15: 화합물 15의 제조Production Example 15: Preparation of Compound 15
[화합물 15] [Compound 15]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 I(4.28g, 13.85mmol), N-([1,1'-biphenyl]-4-yl)-9,9-dimethyl-9H-fluoren-2-amine(5.55g, 15.37mmol)을 Xylene 280ml에 완전히 녹인 후 Caesium carbonate(5.76g, 18.01mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.07g, 0.14mmol)을 넣은 후 4 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 filter하여 base를 제거한 후에 Xylene을 감압농축 시키고 테트라하이드로퓨란 220ml으로 재결정하여 상기 화합물 15(4.39g, 수율: 46%)를 제조하였다.(4.28 g, 13.85 mmol), N - ([1,1'-biphenyl] -4-yl) -9,9-dimethyl-9H-fluoren- bis (tri- tert- butylphosphine) palladium (0) (0.07g, 0.14mmol) was added to the reaction mixture, and the mixture was stirred for 4 hours Followed by heating and stirring. After the temperature was lowered to room temperature and the base was removed by filtration, the xylene was concentrated under reduced pressure and recrystallized from 220 ml of tetrahydrofuran to obtain the compound 15 (4.39 g, yield: 46%).
MS[M+H]+= 696MS [M + H] < + > = 696
제조예 16: 화합물 16의 제조Production Example 16: Preparation of Compound 16
[화합물 16] [Compound 16]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 K(9.68g, 19.28mmol), phenylboronic acid(2.61g, 21.40mmol)을 테트라하이드로퓨란 240ml에 완전히 녹인 후 2M 탄산칼륨수용액(120ml)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.67g, 0.58mmol)을 넣은 후 4 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 물 층을 제거하고 무수황산마그네슘으로 건조한 후 감압농축 시키고 에틸아세테이트 220ml로 재결정하여 상기 화합물 16(6.09g, 수율: 54%)을 제조하였다.Compound K (9.68 g, 19.28 mmol) and phenylboronic acid (2.61 g, 21.40 mmol) were completely dissolved in 240 ml of tetrahydrofuran in a 500 ml round-bottomed flask under nitrogen atmosphere, and 2M potassium carbonate aqueous solution (120 ml) (Triphenylphosphine) palladium (0.67 g, 0.58 mmol) were added thereto, followed by heating and stirring for 4 hours. The temperature was lowered to room temperature, the water layer was removed, dried over anhydrous magnesium sulfate, and concentrated under reduced pressure. The residue was recrystallized from ethyl acetate (220 ml) to give Compound 16 (6.09 g, yield: 54%).
MS[M+H]+= 580MS [M + H] < + > = 580
제조예 17: 화합물 17의 제조Production Example 17: Preparation of Compound 17
[화합물 17] [Compound 17]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A(5.32g,(4-(di([1,1'-biphenyl]-4-yl)amino)phenyl)boronic acid(10.72g, 24.30mmol)을 테트라하이드로퓨란 240ml에 완전히 녹인 후 2M 탄산칼륨수용액(120ml)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.76g, 0.66mmol)을 넣은 후 4 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 물 층을 제거하고 무수황산마그네슘으로 건조한 후 감압농축 시키고 에틸아세테이트 250ml로 재결정하여 상기 화합물 17(7.12g, 수율: 51%)을 제조하였다.(5.72 g, (4- (di ([1,1'-biphenyl] -4-yl) amino) phenyl) boronic acid (10.72 g, 24.30 mmol) was dissolved in tetrahydrofuran (Triphenylphosphine) palladium (0.76 g, 0.66 mmol) was added thereto, and the mixture was heated with stirring for 4 hours. After the temperature was lowered to room temperature, a water layer The organic layer was dried over anhydrous magnesium sulfate, concentrated under reduced pressure, and recrystallized from ethyl acetate (250 ml) to obtain Compound (17) (7.12 g, yield: 51%).
MS[M+H]+= 640MS [M + H] < + > = 640
제조예 18: 화합물 18의 제조Production Example 18: Preparation of Compound 18
[화합물 18] [Compound 18]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A(6.67g, 27.45mmol),(4-([1,1'-biphenyl]-4-yl(9,9-dimethyl-9H-fluoren-2-yl)amino)phenyl)boronic acid(10.72g, 24.30mol)을 테트라하이드로퓨란 240ml에 완전히 녹인 후 2M 탄산칼륨수용액(120ml)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.76g, 0.66mmol)을 넣은 후 4 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 물 층을 제거하고 무수황산마그네슘으로 건조한 후 감압농축 시키고 에틸아세테이트 250ml로 재결정하여 상기 화합물 18(7.12g, 수율: 51%)을 제조하였다.Compound A (6.67 g, 27.45 mmol), (4 - ([1,1'-biphenyl] -4-yl (9,9-dimethyl-9H- fluoren- 2- yl) amino ) phenylboronic acid (10.72 g, 24.30 mol) was completely dissolved in 240 ml of tetrahydrofuran. To the mixture was added 2M potassium carbonate aqueous solution (120 ml), tetrakis- (triphenylphosphine) palladium (0.76 g, 0.66 mmol) And the mixture was heated and stirred for 4 hours. The temperature was lowered to room temperature, and the water layer was removed. The organic layer was dried over anhydrous magnesium sulfate, concentrated under reduced pressure, and recrystallized from ethyl acetate (250 ml) to prepare the compound 18 (7.12 g, yield: 51%).
MS[M+H]+= 680MS [M + H] < + > = 680
제조예 19: 화합물 19의 제조Production Example 19: Preparation of Compound 19
[화합물 19] [Compound 19]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 C(7.75g, 27.45mmol),(4-([1,1'-biphenyl]-4-yl(9,9-dimethyl-9H-fluoren-2-yl)amino)phenyl)boronic acid(13.41g, 30.42mol)을 테트라하이드로퓨란 280ml에 완전히 녹인 후 2M 탄산칼륨수용액(140ml)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.92g, 079mmol)을 넣은 후 3 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 물 층을 제거하고 무수황산마그네슘으로 건조한 후 감압농축 시키고 에틸아세테이트 250ml로 재결정하여 상기 화합물 19(15.26g, 수율: 84%)를 제조하였다.To a 500 ml round-bottom flask in a nitrogen atmosphere was added compound C (7.75 g, 27.45 mmol), (4 - ([1,1'-biphenyl] -4-yl ) phenyl boronic acid (13.41 g, 30.42 mol) was completely dissolved in 280 ml of tetrahydrofuran, followed by addition of 2M aqueous potassium carbonate solution (140 ml) and tetrakis- (triphenylphosphine) palladium (0.92 g, Followed by heating and stirring for 3 hours. The temperature was lowered to room temperature, the water layer was removed, dried over anhydrous magnesium sulfate, concentrated under reduced pressure, and recrystallized from ethyl acetate (250 ml) to obtain Compound 19 (15.26 g, yield: 84%).
MS[M+H]+= 690MS [M + H] < + > = 690
제조예 20: 화합물 20의 제조Production Example 20: Preparation of Compound 20
[화합물 20] [Compound 20]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 L(5.47g, 17.15mmol), di([1,1'-biphenyl]-4-yl)amine(6.33g, 19.72mmol)을 Xylene 180ml에 완전히 녹인 후 Caesium carbonate(8.38g, 25.72mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.09g, 0.17mmol)을 넣은 후 6 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 filter하여 base를 제거한 후에 Xylene을 감압농축 시키고 에틸아세테이트 250ml으로 재결정하여 상기 화합물 20(6.77g, 수율: 62%)을 제조하였다.The compound L (5.47 g, 17.15 mmol) and di ([1,1'-biphenyl] -4-yl) amine (6.33 g, 19.72 mmol) were completely dissolved in 180 ml of xylene in a 500 ml round- (8.38 g, 25.72 mmol) was added, and Bis (tri- tert- butylphosphine) palladium (0) (0.09 g, 0.17 mmol) was added thereto and the mixture was heated with stirring for 6 hours. The temperature was lowered to room temperature, and the base was removed by filtration. The xylene was concentrated under reduced pressure and recrystallized from ethyl acetate (250 ml) to obtain Compound 20 (6.77 g, yield 62%).
MS[M+H]+= 640MS [M + H] < + > = 640
제조예 21: 화합물 21의 제조Production Example 21: Preparation of Compound 21
[화합물 21] [Compound 21]
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 M(7.54g, 22.51mmol), N-([1,1'-biphenyl]-4-yl)-9,9-dimethyl-9H-fluoren-2-amine(9.34g, 25.88mmol)을 Xylene 220ml에 완전히 녹인 후 Caesium carbonate(11.00g, 33.76mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.12g, 0.23mmol)을 넣은 후 3 시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 filter하여 base를 제거한 후에 Xylene을 감압농축 시키고 에틸아세테이트 180ml으로 재결정하여 상기 화합물 21(10.07g, 수율: 64%)를 제조하였다.(7.54 g, 22.51 mmol), N - ([1,1'-biphenyl] -4-yl) -9,9-dimethyl-9H- fluoren- 2 -amine g, 25.88 mmol) was completely dissolved in 220 ml of xylene, followed by the addition of Caesium carbonate (11.00 g, 33.76 mmol), bis (tri- tert- butylphosphine) palladium (0) (0.12 g, 0.23 mmol) Followed by heating and stirring. The temperature was lowered to room temperature, and the base was removed by filtration. The xylene was concentrated under reduced pressure and recrystallized from ethyl acetate (180 ml) to obtain Compound 21 (10.07 g, yield: 64%).
MS[M+H]+= 696MS [M + H] < + > = 696
실시예 1-1Example 1-1
ITO(indium tin oxide)가 1,000Å의 두께로 박막 코팅된 유리 기판을 세제를 녹인 증류수에 넣고 초음파로 세척하였다. 이 때, 세제로는 피셔사(Fischer Co.) 제품을 사용하였으며, 증류수로는 밀러포어사(Millipore Co.) 제품의 필터(Filter)로 2차로 걸러진 증류수를 사용하였다. ITO를 30분간 세척한 후 증류수로 2회 반복하여 초음파 세척을 10분간 진행하였다. 증류수 세척이 끝난 후, 이소프로필알콜, 아세톤, 메탄올의 용제로 초음파 세척을 하고 건조시킨 후 플라즈마 세정기로 수송시켰다. 또한, 산소 플라즈마를 이용하여 상기 기판을 5분간 세정한 후 진공 증착기로 기판을 수송시켰다.The glass substrate coated with ITO (indium tin oxide) thin film with a thickness of 1,000 Å was immersed in distilled water containing detergent and washed with ultrasonic waves. In this case, Fischer Co. was used as a detergent, and distilled water filtered by a filter of Millipore Co. was used as distilled water. The ITO was washed for 30 minutes and then washed twice with distilled water and ultrasonically cleaned for 10 minutes. After the distilled water was washed, it was ultrasonically washed with a solvent of isopropyl alcohol, acetone, and methanol, dried, and then transported to a plasma cleaner. Further, the substrate was cleaned using oxygen plasma for 5 minutes, and then the substrate was transported by a vacuum evaporator.
이렇게 준비된 ITO 투명 전극 위에 하기 화학식의 헥사니트릴 헥사아자트리페닐렌 (hexaazatriphenylene; HAT)를 150Å의 두께로 열 진공 증착하여 정공 주입층을 형성하였다. On this ITO transparent electrode, hexanitrile hexaazatriphenylene (HAT) of the following formula was thermally vacuum deposited to a thickness of 150 Å to form a hole injection layer.
[HAT][LINE]
상기 정공 주입층 위에 정공을 수송하는 물질인 하기 화합물 HT1(1150Å)을 진공 증착하여 정공 수송층을 형성하였다. The following compound HT1 (1150 ANGSTROM), which is a material for transporting holes, was vacuum deposited on the hole injection layer to form a hole transport layer.
[HT1][HT1]
이어서, 상기 정공 수송층 위에 막 두께 150Å으로 상기 제조예 1에서 제조한 화합물 1을 진공 증착하여 전자 차단층을 형성하였다.Subsequently,
이어서, 상기 전자 저지층 위에 막 두께 300Å으로 아래와 같은 BH와 BD를 25:1의 중량비로 진공증착하여 발광층을 형성하였다. Subsequently, BH and BD were vacuum deposited on the electron blocking layer to a thickness of 300 ANGSTROM at a weight ratio of 25: 1 to form a light emitting layer.
[BH] [BD][BH] [BD]
[ET][ET]
[LiQ][LiQ]
상기 발광층 위에 상기 화합물 ET과 상기 화합물 LiQ(Lithium Quinolate)를 1:1의 중량비로 진공증착하여 300Å의 두께로 전자 수송층을 형성하였다. 상기 전자 수송층 위에 순차적으로 12Å두께로 리튬플로라이드(LiF)와 2,000Å 두께로 알루미늄을 증착하여 전자 주입층 및 음극을 형성하였다. The compound ET and the compound LiQ (Lithium Quinolate) were vacuum deposited on the light emitting layer at a weight ratio of 1: 1 to form an electron transport layer having a thickness of 300 ANGSTROM. Aluminum was sequentially deposited on the electron transport layer to a thickness of 12 Å and a thickness of 2,000 Å to form an electron injection layer and a cathode.
상기의 과정에서 유기물의 증착속도는 0.4~ 0.7Å/sec를 유지하였고, 음극의 리튬플로라이드는 0.3Å/sec, 알루미늄은 2Å/sec의 증착 속도를 유지하였으며, 증착시 진공도는 2 ⅹ10-7 ~5 ⅹ10-6 torr를 유지하여, 유기 발광 소자를 제작하였다.Was maintained at the deposition rate was 0.4 ~ 0.7Å / sec for organic material in the above process, the lithium fluoride of the cathode was 0.3Å / sec, aluminum is deposited at a rate of 2Å / sec, the degree of vacuum upon
실시예 1-2 내지 실시예 1-15 Examples 1-2 to 1-15
전자 차단층 형성시 화합물 1 대신 하기 표 1과 같이 변경하였다는 점을 제외하고는, 상기 실시예 1-1과 동일한 방법을 이용하여 실시예 1-2 내지 1-15의 유기 발광 소자를 각각 제작하였다.The organic light emitting devices of Examples 1-2 to 1-15 were fabricated in the same manner as in Example 1-1, except that
비교예 1-1 Comparative Example 1-1
전자 차단층 형성시 화합물 1 대신 하기 EB-1을 사용하였다는 점을 제외하고는, 상기 실시예 1-1과 동일한 방법을 이용하여 유기 발광 소자를 제작하였다An organic light emitting device was fabricated in the same manner as in Example 1-1 except that EB-1 was used instead of
[EB-1][EB-1]
비교예 1-2 Comparative Example 1-2
전자 차단층 형성시 화합물 1 대신 하기 EB-2을 사용하였다는 점을 제외하고는, 상기 실시예 1-1과 동일한 방법을 이용하여 유기 발광 소자를 제작하였다An organic light emitting device was fabricated in the same manner as in Example 1-1 except that EB-2 was used instead of
[EB-2][EB-2]
비교예 1-3 Comparative Example 1-3
전자 차단층 형성시 화합물 1 대신 하기 EB-3을 사용하였다는 점을 제외하고는, 상기 실시예 1-1과 동일한 방법을 이용하여 유기 발광 소자를 제작하였다An organic light emitting device was fabricated using the same method as in Example 1-1 except that EB-3 was used instead of
[EB-3][EB-3]
비교예 1-4 Comparative Example 1-4
전자 차단층 형성시 화합물 1 대신 하기 EB-4을 사용하였다는 점을 제외하고는, 상기 실시예 1-1과 동일한 방법을 이용하여 유기 발광 소자를 제작하였다An organic light emitting device was fabricated using the same method as in Example 1-1 except that EB-4 was used instead of
[EB-4][EB-4]
실험예 1Experimental Example 1
상기 실시예 1-1 내지 1-13 및 비교예 1-1 내지 1-3에서 제작된 유기 발광 소자에 전류를 인가하여, 전압, 효율, 휘도, 색좌표 및 수명을 측정하고 그 결과를 하기 표 1에 나타내었다. T95은 휘도가 초기휘도(650nit)에서 95%로 감소되는데 소요되는 시간을 의미한다.The voltage, efficiency, luminance, color coordinate and lifetime were measured by applying current to the organic light-emitting devices fabricated in Examples 1-1 to 1-13 and Comparative Examples 1-1 to 1-3. The results are shown in the following Table 1 Respectively. T95 means the time required for the luminance to decrease from the initial luminance (650 nits) to 95%.
화합물The electron blocking layer
compound
(V@10mA/cm2)Voltage
(V @ 10 mA / cm 2 )
(cd/A@10mA/cm2)efficiency
(cd / A @ 10mA / cm 2)
(x,y)Color coordinates
(x, y)
(T95, h)life span
(T95, h)
상기 표 1에서 보는 바와 같이, 본 발명에 따른 화합물을 전자 차단층으로 사용하여 제조된 유기 발광 소자의 경우에 비교예의 유기 발광 소자에 비하여 구동전압, 전류효율, 수명 및 안정성 측면에서 우수한 성능을 나타냄을 확인할 수 있다. As shown in Table 1, the organic light emitting device manufactured using the compound according to the present invention as an electron blocking layer exhibited superior performance in terms of driving voltage, current efficiency, lifetime, and stability as compared with the organic light emitting device of the comparative example can confirm.
구체적으로, 본원 발명의 코어와 같은 구조를 가지면서 1번 및 3번 방향에 치환기가 없는 비교예 1-1 내지 1-3의 화합물을 전자억제층으로 사용하여 제조된 유기 발광 소자는, 실시예 대비 효율이 10% 이상, 수명은 30% 이상 떨어지는 결과를 나타내었다. Specifically, the organic light-emitting device manufactured using the compounds of Comparative Examples 1-1 to 1-3, which have the same structure as the core of the present invention and have no substituent in the 1 st and 3 rd directions, as the electron suppressing layer, The contrast efficiency was more than 10%, and the life time was more than 30%.
한편, 비교예 1-4의 화합물은 코어와 아릴아민기 사이의 거리가 너무 멀어서 유기 발광 소자의 특성이 크게 나빠지는 결과를 보였다.On the other hand, in the compound of Comparative Example 1-4, the distance between the core and the arylamine group was too large, and the characteristics of the organic light emitting device were greatly deteriorated.
이에, 본원 발명 실시예의 화합물의 경우, 소자의 효율을 높여주는 동시에 안정성이 크게 증가하는 것을 확인할 수 있었다.In the case of the compound of the present invention, it was confirmed that the efficiency of the device was increased and the stability was greatly increased.
실시예 2-1Example 2-1
ITO(indium tin oxide)가 1,000Å의 두께로 박막 코팅된 유리 기판을 세제를 녹인 증류수에 넣고 초음파로 세척하였다. 이 때, 세제로는 피셔사(Fischer Co.) 제품을 사용하였으며, 증류수로는 밀러포어사(Millipore Co.) 제품의 필터(Filter)로 2차로 걸러진 증류수를 사용하였다. ITO를 30분간 세척한 후 증류수로 2회 반복하여 초음파 세척을 10분간 진행하였다. 증류수 세척이 끝난 후, 이소프로필알콜, 아세톤, 메탄올의 용제로 초음파 세척을 하고 건조시킨 후 플라즈마 세정기로 수송시켰다. 또한, 산소 플라즈마를 이용하여 상기 기판을 5분간 세정한 후 진공 증착기로 기판을 수송시켰다.The glass substrate coated with ITO (indium tin oxide) thin film with a thickness of 1,000 Å was immersed in distilled water containing detergent and washed with ultrasonic waves. In this case, Fischer Co. was used as a detergent, and distilled water filtered by a filter of Millipore Co. was used as distilled water. The ITO was washed for 30 minutes and then washed twice with distilled water and ultrasonically cleaned for 10 minutes. After the distilled water was washed, it was ultrasonically washed with a solvent of isopropyl alcohol, acetone, and methanol, dried, and then transported to a plasma cleaner. Further, the substrate was cleaned using oxygen plasma for 5 minutes, and then the substrate was transported by a vacuum evaporator.
이렇게 준비된 ITO 투명 전극 위에 상기 HAT를 150Å의 두께로 열 진공 증착하여 정공 주입층을 형성하였다. The HAT was thermally vacuum deposited on the ITO transparent electrode to a thickness of 150 Å to form a hole injection layer.
상기 정공 주입층 위에 정공을 수송하는 물질로서 상기 제조예 1에서 제조한 화합물 1을 막 두께 1150Å으로 진공 증착하여 정공 수송층을 형성하였다.
이어서, 상기 정공 수송층 위에 막 두께 150Å으로 하기 화합물 EB를 진공 증착하여 전자 차단층을 형성하였다.Subsequently, the following compound EB was vacuum deposited on the hole transport layer to a thickness of 150 ANGSTROM to form an electron blocking layer.
[EB][EB]
이어서, 상기 전자 저지층 위에 막 두께 300Å으로 상기 BH와 BD를 25:1의 중량비로 진공증착하여 발광층을 형성하였다. Subsequently, BH and BD were vacuum deposited on the electron blocking layer to a thickness of 300 ANGSTROM at a weight ratio of 25: 1 to form a light emitting layer.
상기 발광층 위에 상기 화합물 ET과 상기 화합물 LiQ(Lithium Quinolate)를 1:1의 중량비로 진공증착하여 300Å의 두께로 전자 수송층을 형성하였다. 상기 전자 수송층 위에 순차적으로 12Å두께로 리튬플로라이드(LiF)와 2,000Å 두께로 알루미늄을 증착하여 전자 주입층 및 음극을 형성하였다. The compound ET and the compound LiQ (Lithium Quinolate) were vacuum deposited on the light emitting layer at a weight ratio of 1: 1 to form an electron transport layer having a thickness of 300 ANGSTROM. Aluminum was sequentially deposited on the electron transport layer to a thickness of 12 Å and a thickness of 2,000 Å to form an electron injection layer and a cathode.
상기의 과정에서 유기물의 증착속도는 0.4~ 0.7Å/sec를 유지하였고, 음극의 리튬플로라이드는 0.3Å/sec, 알루미늄은 2Å/sec의 증착 속도를 유지하였으며, 증착시 진공도는 2 ⅹ10-7 ~5 ⅹ10-6 torr를 유지하여, 유기 발광 소자를 제작하였다.Was maintained at the deposition rate was 0.4 ~ 0.7Å / sec for organic material in the above process, the lithium fluoride of the cathode was 0.3Å / sec, aluminum is deposited at a rate of 2Å / sec, the degree of vacuum upon
실시예 2-2 내지 실시예 2-12 Examples 2-2 to 2-12
정공 수송층 형성시 전자 수송 물질을 화합물 1 대신 하기 표 2와 같이 변경하였다는 점을 제외하고는, 상기 실시예 2-1과 동일한 방법을 이용하여 실시예 2-2 내지 2-12의 유기 발광 소자를 각각 제작하였다.The organic light emitting devices of Examples 2-2 to 2-12 were produced in the same manner as in Example 2-1 except that the electron transporting material in the formation of the hole transporting layer was changed as shown in Table 2 instead of the
비교예 2-1 Comparative Example 2-1
정공 수송층 형성시 전자 수송 물질을 화합물 1 대신 하기 HT-1을 사용하였다는 점을 제외하고는, 상기 실시예 2-1과 동일한 방법을 이용하여 유기 발광 소자를 제작하였다.An organic light emitting device was fabricated using the same method as in Example 2-1, except that HT-1 was used instead of
[HT-1][HT-1]
비교예 2-2 Comparative Example 2-2
정공 수송층 형성시 전자 수송 물질을 화합물 1 대신 하기 HT-2를 사용하였다는 점을 제외하고는, 상기 실시예 2-1과 동일한 방법을 이용하여 유기 발광 소자를 제작하였다.An organic light emitting device was fabricated using the same method as in Example 2-1 except that HT-2 was used instead of
[HT-2][HT-2]
비교예 2-3 Comparative Example 2-3
정공 수송층 형성시 전자 수송 물질을 화합물 1 대신 하기 HT-3을 사용하였다는 점을 제외하고는, 상기 실시예 2-1과 동일한 방법을 이용하여 유기 발광 소자를 제작하였다.An organic light emitting device was fabricated using the same method as in Example 2-1, except that HT-3 was used instead of
[HT-3][HT-3]
비교예 2-4Comparative Example 2-4
정공 수송층 형성시 전자 수송 물질을 화합물 1 대신 하기 HT-4을 사용하였다는 점을 제외하고는, 상기 실시예 2-1과 동일한 방법을 이용하여 유기 발광 소자를 제작하였다. An organic light emitting device was fabricated using the same method as in Example 2-1 except that HT-4 was used instead of
[HT-4][HT-4]
실험예 2Experimental Example 2
상기 실시예 2-1 내지 2-12 및 비교예 2-1 내지 2-4에서 제작된 유기 발광 소자에 전류를 인가하여, 전압, 효율, 휘도, 색좌표 및 수명을 측정하고 그 결과를 하기 표 2에 나타내었다. T95은 휘도가 초기휘도(650nit)에서 95%로 감소되는데 소요되는 시간을 의미한다.The voltage, efficiency, luminance, chromaticity coordinate and lifetime were measured by applying current to the organic light-emitting device manufactured in Examples 2-1 to 2-12 and Comparative Examples 2-1 to 2-4, Respectively. T95 means the time required for the luminance to decrease from the initial luminance (650 nits) to 95%.
화합물Hole transport layer
compound
(V@10mA/cm2)Voltage
(V @ 10 mA / cm 2 )
(cd/A@10mA/cm2)efficiency
(cd / A @ 10mA / cm 2)
(x,y)Color coordinates
(x, y)
(T95, h)life span
(T95, h)
상기 표 2에서 보는 바와 같이, 본 발명에 따른 화합물을 정공 수송층으로 사용하여 제조된 유기 발광 소자의 경우에 비교예의 유기 발광 소자에 비하여 전류효율, 구동전압, 수명 및 안정성 측면에서 우수한 성능을 나타냄을 확인할 수 있다.As shown in Table 2, the organic light emitting device manufactured using the compound according to the present invention as a hole transport layer exhibited superior performance in terms of current efficiency, driving voltage, lifetime, and stability compared with the organic light emitting device of the comparative example Can be confirmed.
구체적으로, 본원 발명의 코어와 같은 구조를 가지면서 1번 및 3번 방향에 치환기가 없는 비교예 2-1 내지 2-3의 화합물을 정공수송층으로 사용하여 제조된 유기 발광 소자는, 실시예 대비 효율이 10% 이상, 수명은 30% 이상 떨어지는 결과를 나타내었다. Specifically, the organic light emitting device manufactured using the compounds of Comparative Examples 2-1 to 2-3, which had the same structure as the core of the present invention and had no substituent in the first and third directions, as the hole transport layer, The efficiency was more than 10%, and the life time was more than 30%.
한편, 비교예 2-4의 화합물은 코어와 아릴아민기 사이의 거리가 너무 멀어서 유기 발광 소자의 특성이 크게 나빠지는 결과를 보였다.On the other hand, in the compound of Comparative Example 2-4, the distance between the core and the arylamine group was too far, and the characteristics of the organic light emitting device were greatly deteriorated.
이에, 본원 발명 실시예의 화합물의 경우, 소자의 효율을 높여주는 동시에 안정성이 크게 증가하는 것을 확인할 수 있었다.In the case of the compound of the present invention, it was confirmed that the efficiency of the device was increased and the stability was greatly increased.
따라서, 본 발명에 따른 화합물은 전자 차단 능력뿐만 아니라, 정공 수송 능력이 우수하여 유기 발광 소자의 전자차단층 및/또는 정공수송층에 적용 가능함을 알 수 있다.Therefore, it can be seen that the compound according to the present invention is applicable not only to the electron blocking ability but also to the electron blocking layer and / or the hole transporting layer of the organic light emitting device because of its excellent hole transporting ability.
1: 기판
2: 양극
3: 발광층
4: 음극
5: 정공주입층
6: 정공수송층
7: 발광층
8: 전자수송층1: substrate 2: anode
3: light emitting layer 4: cathode
5: Hole injection layer 6: Hole transport layer
7: light emitting layer 8: electron transporting layer
Claims (13)
[화학식 1]
상기 화학식 1에서,
X는 O 또는 S이고,
A 및 B는 각각 독립적으로, 수소; 치환 또는 비치환된 C6-60 아릴; 또는 치환 또는 비치환된 N, O 및 S로 구성되는 군으로부터 선택되는 헤테로원자를 1개 내지 3개 포함하는 C2-60 헤테로아릴이되, A 및 B가 모두 수소인 경우는 제외하고,
L은 단일 결합; 치환 또는 비치환된 C6-60 아릴렌; 또는 치환 또는 비치환된 O, N, Si 및 S로 구성되는 군으로부터 선택되는 헤테로원자를 1개 이상을 포함하는 C2-60 헤테로아릴렌이고,
Ar1 및 Ar2는 각각 독립적으로, 치환 또는 비치환된 C6-60 아릴; 또는 치환 또는 비치환된 N, O 및 S로 구성되는 군으로부터 선택되는 헤테로원자를 1개 내지 3개 포함하는 C2-60 헤테로아릴이고,
R1은 수소; 중수소; 할로겐; 시아노; 니트로; 아미노; 치환 또는 비치환된 C1-60 알킬; 치환 또는 비치환된 C1-60 할로알킬; 치환 또는 비치환된 C1-60 알콕시; 치환 또는 비치환된 C1-60 할로알콕시; 치환 또는 비치환된 C3-60 사이클로알킬; 치환 또는 비치환된 C2-60 알케닐; 치환 또는 비치환된 C6-60 아릴; 치환 또는 비치환된 C6-60 아릴옥시; 또는 치환 또는 비치환된 N, O 및 S로 구성되는 군으로부터 선택되는 헤테로원자를 1개 이상 포함하는 C2-60 헤테로고리기이고,
a1은 0 내지 4의 정수이다.
A compound represented by the following formula (1):
[Chemical Formula 1]
In Formula 1,
X is O or S,
A and B each independently represent hydrogen; Substituted or unsubstituted C 6-60 aryl; Or substituted or unsubstituted C 2-60 heteroaryl containing 1 to 3 heteroatoms selected from the group consisting of N, O and S, except that when A and B are both hydrogen,
L is a single bond; Substituted or unsubstituted C 6-60 arylene; Or substituted or unsubstituted C 2-60 heteroarylene containing at least one heteroatom selected from the group consisting of O, N, Si and S,
Ar 1 and Ar 2 are each independently a substituted or unsubstituted C 6-60 aryl; Or substituted or unsubstituted C 2-60 heteroaryl containing 1 to 3 heteroatoms selected from the group consisting of N, O and S,
R 1 is hydrogen; heavy hydrogen; halogen; Cyano; Nitro; Amino; Substituted or unsubstituted C 1-6 alkyl; Substituted or unsubstituted C 1-6 haloalkyl; Substituted or unsubstituted C 1-60 alkoxy; Substituted or unsubstituted C 1-60 haloalkoxy; Substituted or unsubstituted C 3-60 cycloalkyl; Substituted or unsubstituted C 2-60 alkenyl; Substituted or unsubstituted C 6-60 aryl; Substituted or unsubstituted C 6-60 aryloxy; Or a substituted or unsubstituted C 2-60 heterocyclic group containing at least one heteroatom selected from the group consisting of N, O and S,
a1 is an integer of 0 to 4;
A 및 B는 각각 독립적으로, 하기로 구성되는 군으로부터 선택되는 어느 하나인, 화합물:
상기에서,
Y1은 O, S, 또는 CZ4Z5이고,
Z1 내지 Z5는 각각 독립적으로, 수소; 중수소; 할로겐; 시아노; 니트로; 아미노; C1-20 알킬; C1-20 할로알킬; C6-20 아릴; O 또는 S의 헤테로원자를 1개 이상 포함하는 C2-20 헤테로아릴이고,
n1 내지 n3는 각각 독립적으로, 0 내지 3의 정수이다.
The method according to claim 1,
A and B are each independently selected from the group consisting of:
In the above,
Y 1 is O, S, or CZ 4 Z 5 ,
Z 1 to Z 5 each independently represent hydrogen; heavy hydrogen; halogen; Cyano; Nitro; Amino; C 1-20 alkyl; C 1-20 haloalkyl; C 6-20 aryl; Lt ; / RTI > heteroaryl containing one or more heteroatoms of O or S,
n1 to n3 each independently represent an integer of 0 to 3;
A 및 B는 각각 독립적으로, 하기로 구성되는 군으로부터 선택되는 어느 하나인, 화합물:
3. The method of claim 2,
A and B are each independently selected from the group consisting of:
L은 단일 결합, 또는 하기로 구성되는 군으로부터 선택되는 어느 하나인, 화합물:
.
The method according to claim 1,
L is a single bond, or any one selected from the group consisting of:
.
L은 단일 결합, 또는 하기로 구성되는 군으로부터 선택되는 어느 하나인, 화합물:
.
5. The method of claim 4,
L is a single bond, or any one selected from the group consisting of:
.
Ar1 및 Ar2는 각각 독립적으로, 하기로 구성되는 군으로부터 선택되는 어느 하나인, 화합물:
상기에서,
Y2는 O, S, 또는 CZ14Z15이고,
Z11 내지 Z15는 각각 독립적으로, 수소; 중수소; 할로겐; 시아노; 니트로; 아미노; 실릴; C1-20 알킬; C1-20 할로알킬; C6-20 아릴; O 또는 S의 헤테로원자를 1개 이상 포함하는 C2-20 헤테로아릴이되, Z14 및 Z15는 서로 연결되어 단환 또는 다환의 고리를 형성할 수 있고,
m1 내지 m3는 각각 독립적으로, 0 내지 3의 정수이다.
The method according to claim 1,
Ar 1 and Ar 2 are each independently any one selected from the group consisting of:
In the above,
Y 2 is O, S, or CZ 14 Z 15 ,
Z 11 to Z 15 each independently represent hydrogen; heavy hydrogen; halogen; Cyano; Nitro; Amino; Silyl; C 1-20 alkyl; C 1-20 haloalkyl; C 6-20 aryl; O or are a C 2-20 heteroaryl group containing one or more heteroatoms of S, Z 14 and Z 15 may combine to form a monocyclic or polycyclic ring are connected to each other,
m1 to m3 each independently represent an integer of 0 to 3;
Ar1 및 Ar2는 각각 독립적으로, 하기로 구성되는 군으로부터 선택되는 어느 하나인, 화합물:
The method according to claim 6,
Ar 1 and Ar 2 are each independently any one selected from the group consisting of:
R1은 수소, 중수소, 할로겐, 시아노, 니트로, 메틸, 또는 페닐이고,
a1은 0 또는 1인, 화합물.
The method according to claim 1,
R 1 is hydrogen, deuterium, halogen, cyano, nitro, methyl, or phenyl,
and a1 is 0 or 1.
상기 화합물은 하기 화학식 1A 또는 1B로 표시되는, 화합물:
[화학식 1A]
[화학식 1B]
상기 화학식 1A 및 1B 에서,
X, A, B, L, Ar1 및 Ar2에 대한 설명은 제1항에서 정의한 바와 같다.
The method according to claim 1,
The compound is a compound represented by the following formula (1A) or (1B):
≪ EMI ID =
≪ RTI ID = 0.0 &
In the above formulas 1A and 1B,
X, A, B, L, Ar < 1 > and Ar < 2 >
상기 화합물은 하기 화합물로 구성되는 군으로부터 선택되는 어느 하나인, 화합물:
The method according to claim 1,
Wherein said compound is any one selected from the group consisting of the following compounds:
A first electrode; A second electrode facing the first electrode; And at least one organic compound layer disposed between the first electrode and the second electrode, wherein at least one of the organic compound layers includes the compound according to any one of claims 1 to 10 The organic light-emitting device.
상기 화합물을 포함하는 유기물층은 정공주입층; 정공수송층; 또는 정공주입과 정공수송을 동시에 하는 층인, 유기 발광 소자.
12. The method of claim 11,
The organic compound layer containing the compound may include a hole injection layer; A hole transport layer; Or a layer which simultaneously injects holes and transports holes.
상기 화합물을 포함하는 유기물층은 전자 차단층인, 유기 발광 소자.12. The method of claim 11,
Wherein the organic compound layer containing the compound is an electron blocking layer.
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