KR20180085103A - By-directional electrically conductive pattern module - Google Patents

By-directional electrically conductive pattern module Download PDF

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Publication number
KR20180085103A
KR20180085103A KR1020170007884A KR20170007884A KR20180085103A KR 20180085103 A KR20180085103 A KR 20180085103A KR 1020170007884 A KR1020170007884 A KR 1020170007884A KR 20170007884 A KR20170007884 A KR 20170007884A KR 20180085103 A KR20180085103 A KR 20180085103A
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KR
South Korea
Prior art keywords
main
conductive
hole
holes
wall
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KR1020170007884A
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Korean (ko)
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KR101919881B1 (en
Inventor
문해중
이은주
정주연
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주식회사 이노글로벌
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Priority to KR1020170007884A priority Critical patent/KR101919881B1/en
Priority to PCT/KR2017/000594 priority patent/WO2018135674A1/en
Publication of KR20180085103A publication Critical patent/KR20180085103A/en
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Publication of KR101919881B1 publication Critical patent/KR101919881B1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks

Abstract

The present invention relates to a bidirectional conductive pattern module, and more particularly, to a bidirectional conductive pattern module comprising: a main body formed by stacking a plurality of base substrates having an insulating layer of an insulating material and a conductive layer formed on one surface or both surfaces of the insulating layer; A plurality of main through-holes formed in the main body in a vertical direction; An inner insulating wall of an insulating material applied to an inner wall surface side of each of the main through holes; An inner conductive wall formed between at least one of the plurality of main through holes and between the inner wall surface and the inner insulating wall to electrically connect the conductive layers of the plurality of base substrates; An upper support layer of an elastic material having elasticity attached to an upper surface of the main body and having a plurality of upper through holes corresponding to the plurality of main through holes; A lower supporting layer of an elastic material having elasticity attached to a lower surface of the main body and having a plurality of lower through holes corresponding to the plurality of main through holes; The upper surface of the upper support layer and the lower support layer are exposed in a plurality of the main through holes, respectively, while the upper surface is exposed in the upper direction through the upper through hole and the lower surface is exposed in the lower direction through the lower through hole. And a plurality of bidirectional conductive pins supported by the plurality of bidirectional conductive pins. It is also applicable to interposer that can test high-speed while replacing pogo-pin type semiconductor test socket and electrically connect CPU and board between high-speed CPU and board. .

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a bidirectional conductive pattern module (BY-DIRECTIONAL ELECTRICAL CONDUCTIVE PATTERN MODULE)

The present invention relates to a bidirectional conductive pattern module, and more particularly, to a bidirectional conductive pattern module capable of replacing a pogo-pin type semiconductor test socket, capable of testing at a high speed with stable signal transmission, To a bi-directional conductive pattern module applicable to an interposer that electrically connects a CPU and a board between the CPU and the board.

The semiconductor device is subjected to a manufacturing process and then an inspection for judging whether the electrical performance is good or not. Inspection is carried out with a semiconductor test socket (or a connector or a connector) formed so as to be in electrical contact with a terminal of a semiconductor element inserted between a semiconductor element and an inspection circuit board. Semiconductor test sockets are used in burn-in testing process of semiconductor devices in addition to final semiconductor testing of semiconductor devices.

The size and spacing of terminals or leads of semiconductor devices are becoming finer in accordance with the development of technology for integrating semiconductor devices and miniaturization trends and there is a demand for a method of finely forming spaces between conductive patterns of test sockets.

However, conventional Pogo-pin type semiconductor test sockets have a limitation in manufacturing semiconductor test sockets for testing integrated semiconductor devices. 1 to 3 are views showing an example of a conventional pogo-pin type semiconductor test socket disclosed in Korean Patent Laid-Open No. 10-2011-0065047.

1 to 3, the conventional semiconductor test socket 1100 includes a housing 1110 having a through hole 1111 formed at a position corresponding to the terminal 1131 of the semiconductor device 1130 in a vertical direction, A pogo-pin 1120 mounted in the through-hole 1111 of the housing 1110 and electrically connecting the terminal 1131 of the semiconductor device 1130 and the pad 1141 of the test apparatus 1140, Lt; / RTI >

The configuration of the pogo-pin 1120 includes a barrel 1124 having a cylindrical shape that is used as a pogo-pin body and has an interior hollow portion, and a barrel 1124 formed on the lower side of the barrel 1124 A contact tip 1123 and a spring 1122 connected to the contact tip 1123 inside the barrel 1124 for contraction and expansion and a spring 1122 connected to the contact tip 1123, 1130, and a contact pin 1121 that performs up and down movement.

At this time, the spring 1122 contracts and expands while absorbing the mechanical impact transmitted to the contact pin 1121 and the contact tip 1123, and the terminal 1131 of the semiconductor device 1130 and the test device 1140 The pads 1141 are electrically connected to inspect whether there is an electrical failure.

In the conventional pogo-pin type semiconductor test socket, a physical spring is used to maintain the elasticity in the vertical direction, and a spring and a pin are inserted into the barrel, and a barrel It is required to be inserted into the through hole of the housing again, so that the process is complicated and the manufacturing cost increases due to the complexity of the process.

In addition, the physical structure itself for realizing the electrical contact structure having elasticity in the up and down direction has a limitation in realizing the fine pitch, and in recent years, it has already reached a limit to be applied to the integrated semiconductor device.

1 to 3, the pogo-pin type semiconductor test socket is connected to the connection tip 1123, the spring 1122, and the connection pin 1121 in the vertical direction of the upper portion And there is a limitation in reducing the length in the up and down direction. The limitation of such a length is a limitation in testing a high-speed device.

On the other hand, the Pogo-pin semiconductor test socket is used not only for the testing of semiconductor devices but also for the structure of electrically connecting two devices. As a typical example, a high-speed CPU, for example, a CPU used for a large-capacity server, and an interposer for connecting the pins of the CPU and the terminals of the board between the boards are applied.

In the case of a CPU used in a large-capacity server, the area is wider than the CPU of a general PC and the number of pins is more than 1000, so that a contact failure may occur when the board is directly in contact with the board, A Pogo-pin type interposer connects the two devices elastically in the up and down direction.

In the case of the interposer of the Pogo-pin type, as described above, there is a limitation in applying to a CPU in which the pitch interval is narrowed due to the limitation of the pitch, There is a problem that it is difficult to keep up with the speed of a CPU operating at high speed due to limitations.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a high-speed CPU which can replace a pogo-pin type semiconductor test socket, And a bidirectional conductive pattern module applicable to an interposer for electrically connecting a CPU and a board between the board and the board.

According to the present invention, there is provided a bidirectional conductive pattern module, comprising: a body formed by vertically stacking a plurality of base boards having an insulating layer of an insulating material and a conductive layer formed on one surface or both surfaces of the insulating layer; ; A plurality of main through-holes formed in the main body in a vertical direction; An inner insulating wall of an insulating material applied to an inner wall surface side of each of the main through holes; An inner conductive wall formed between at least one of the plurality of main through holes and between the inner wall surface and the inner insulating wall to electrically connect the conductive layers of the plurality of base substrates; An upper support layer of an elastic material having elasticity attached to an upper surface of the main body and having a plurality of upper through holes corresponding to the plurality of main through holes; A lower supporting layer of an elastic material having elasticity attached to a lower surface of the main body and having a plurality of lower through holes corresponding to the plurality of main through holes; The upper surface of the upper support layer and the lower support layer are exposed in a plurality of the main through holes, respectively, while the upper surface is exposed in the upper direction through the upper through hole and the lower surface is exposed in the lower direction through the lower through hole. And a plurality of bidirectional conductive fins each of which is supported by the conductive pattern pin.

According to another aspect of the present invention, there is provided a bidirectional conductive pattern module, comprising: a plurality of base boards having an insulating layer made of an insulating material and a conductive layer formed on one surface or both surfaces of the insulating layer; A body formed in a laminated structure; A plurality of main through-holes formed in the main body in a vertical direction; An inner insulating wall of an insulating material applied to an inner wall surface side of each of the main through holes; At least one sub through hole formed to pass through the main body in a vertical direction; An inner conductive wall which is applied to an inner wall surface of the sub through hole to electrically connect the conductive layers of the plurality of base substrates; An upper support layer of an insulating material attached to an upper surface of the main body and having a plurality of upper through holes corresponding to the plurality of main through holes; A lower supporting layer of an insulating material attached to a lower surface of the main body and having a plurality of lower through holes corresponding to the plurality of main through holes; The upper surface of the upper support layer and the lower support layer are exposed in a plurality of the main through holes, respectively, while the upper surface is exposed in the upper direction through the upper through hole and the lower surface is exposed in the lower direction through the lower through hole. And a plurality of bidirectional conductive fins each of which is supported by the conductive pattern module.

According to another aspect of the present invention, there is provided a bidirectional conductive pattern module comprising: a body having an insulating layer made of an insulating material and a conductive layer formed on both side surfaces of the insulating layer; A plurality of main through-holes formed in the main body in a vertical direction; An inner insulating wall of an insulating material applied to an inner wall surface side of each of the main through holes; An inner conductive wall formed between at least one of the plurality of main through holes and between the inner wall surface and the corresponding insulating wall to electrically connect the conductive layers on both sides; An upper support layer of an elastic material having elasticity attached to an upper surface of the main body and having a plurality of upper through holes corresponding to the plurality of main through holes; A lower supporting layer of an elastic material having elasticity attached to a lower surface of the main body and having a plurality of lower through holes corresponding to the plurality of main through holes; The upper surface of the upper support layer and the lower support layer are exposed in a plurality of the main through holes, respectively, while the upper surface is exposed in the upper direction through the upper through hole and the lower surface is exposed in the lower direction through the lower through hole. And a plurality of bidirectional conductive fins each of which is supported by the conductive pattern module.

Here, the inner conductive wall may be formed in each of the plurality of main through holes.

Further, each of the bidirectional conductive pins is electrically insulated from the conductive layers by the respective inner insulating walls in the main through-holes, and the conductive layer and the inner conductive wall are electrically connected to each other. Do.

The inner diameter of the upper through-hole and the lower through-hole may be smaller than the inner diameter of the main through-hole.

Also, the upper support layer includes an upper film layer and an upper silicon layer sequentially formed from the upper surface of the body; The lower support layer may include a lower film layer and a lower silicon layer sequentially formed from a lower surface of the main body.

The main through-hole may be filled with a silicone material having elasticity.

The semiconductor device may further include a ground portion electrically connected to the conductive layer and connected to an external ground to connect the conductive layer to the ground.

Here, the ground portion may include a first ground penetrating hole penetrating the main body in a vertical direction, a second ground penetrating hole formed in the upper supporting portion and the lower supporting portion and communicating with the first ground penetrating hole, Hole and a ground conductive wall which is applied to the inner wall of the first ground penetrating hole and is electrically connected to the conductive layer.

Here, the bidirectional conductive pin includes: an upper contact portion in which a thin conductive plate is formed by rolling in a cylindrical shape about an axis in the up-and-down direction; and a conductive thin plate having a cylindrical shape axially- And a connecting portion electrically connecting the upper contact portion and the lower contact portion and having a shape bent into a space between the upper contact portion and the lower contact portion; The upper surface of the upper contact portion is exposed upward through the upper through hole and the lower surface of the lower contact portion is exposed downward through the lower through hole and the connection portion can be received in the main through hole .

The bidirectional conductive pin may include an upper contact portion in which a conductive thin plate is formed by rolling in a cylindrical shape about an upper and lower direction and a lower contact portion in which a conductive thin plate is formed by axially winding a cylindrical shape about the axis, And at least one connection portion for electrically connecting the upper contact portion and the lower contact portion; The connecting portion is connected to the upper contact portion and the lower contact portion at different positions in the circumferential direction so as to connect the upper contact portion and the lower contact portion in a winding manner along the circumferential direction, And the lower surface of the lower contact portion is exposed downward through the lower through hole, and the connection portion can be received in the main through hole.

According to the present invention, it is possible to replace the pogo-pin type semiconductor test socket with a high-speed test while electrically connecting the CPU and the board between the high-speed CPU and the board. A bidirectional conductive pattern module applicable to an interposer for providing a bi-directional conductive pattern is provided.

Figs. 1 to 3 are views for explaining a conventional pogo-pin type semiconductor test socket,
4 is a perspective view of a bidirectional conductive pattern module according to a first embodiment of the present invention,
5 is a cross-sectional view taken along line V-V in Fig. 4,
6 to 9 are views for explaining the manufacturing process of the bidirectional conductive pattern module according to the first embodiment of the present invention,
10 is a cross-sectional view of a bidirectional conductive pattern module according to a second embodiment of the present invention,
11 and 12 are views for explaining a manufacturing process of the bidirectional conductive pattern module according to the second embodiment of the present invention,
13 to 16 are views for explaining embodiments of bidirectional conductive pins of the bidirectional conductive pattern module according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 4 is a perspective view of a bidirectional conductive pattern module 100 according to a first embodiment of the present invention, and FIG. 5 is a cross-sectional view taken along line V-V of FIG. 4 and 5, the bidirectional conductive pattern module 100 according to the first embodiment of the present invention includes a main body 110, a plurality of main through holes 171, an inner insulating wall 130, A conductive support layer 120, an upper support layer 140, a lower support layer 150, and a bi-directional conductive pin 160.

The main body 110 according to the first embodiment of the present invention is formed by stacking a plurality of base substrates 111 in the vertical direction. In FIGS. 4 and 5, four base substrates 111 are stacked to form the main body 110.

The base substrate 111 includes an insulating layer 112 made of an insulating material and conductive layers 113 and 114 formed on one or both surfaces of the insulating layer 112. In FIGS. 4 and 5, the conductive layers 113 and 114 are formed on both side surfaces of the insulating layer 112, but the conductive layers 113 and 114 may be formed only on one side surface.

Here, the base substrate 111 may be provided in the form of a printed circuit board (PCB). The printed circuit board is composed of an insulating material, for example, an insulating layer 112 made of FR4 and conductive layers 113 and 114 made of copper, and it is preferable to use a printed circuit board as the base substrate 111 according to the present invention .

A plurality of main through holes 171 are formed through the main body 110 in the vertical direction (see FIG. 7). However, the number of the main through holes 171 is not limited to the number of the main through holes 171, and more than 1000 main through holes 171 may be formed as an interposer between the CPU and the board It is possible.

The inner insulating wall 130 is applied to the inner wall surface of each of the main through holes 171, and is made of an insulating material. In the present invention, the insulating silicon is formed inside, but the material thereof is not limited thereto. The conductive layers 113 and 114 of the base substrate 111 and the bidirectional conductive pins 160 inserted in the main through hole 171 are physically isolated from each other through the inner insulating wall 130 do.

The inner conductive wall 120 is formed between the inner wall surface of the main through hole 171 and the inner insulating wall 130 to electrically connect the conductive layers 113 and 114 of the plurality of base boards 111. The conductive layers 113 and 114 of the respective layers forming the body 110 are electrically connected to each other. The bidirectional conductive pattern module 100 according to the present invention may be applied to a socket for semiconductor testing or to an interposer If the conductive layers 113 and 114 are used as a ground, a high-speed implementation can be realized. For example, when the bidirectional conductive pattern module 100 according to the present invention is used in a semiconductor test socket, when the conductive layers 113 and 114 are connected to the ground of the inspection circuit board, the bidirectional conductive pattern module 100 Is grounded so that a stable signal can be transmitted through the bidirectional conductive pin 160. That is, a signal transmitted through the bidirectional conductive pin 160 is grounded by the surrounding conductive layers 113 and 114 and the internal conductive wall 120, minimizing noise and mutual signal interference, High-speed implementation is possible.

Here, the method of connecting the conductive layers 113 and 114 and / or the inner conductive wall 120 to the external ground can be connected through a ground portion 180 to be described later. In addition, the bidirectional conductive module 100 according to the present invention It may be connected in various forms according to the structure of the applied device. Here, the inner conductive wall 120 can be formed by sequentially performing nickel plating and gold plating, and a detailed description thereof will be described later.

The upper support layer 140 is attached to the upper surface of the body 110. An upper through hole 172 is formed in the upper support layer 140 at a position corresponding to the main through hole 171 formed in the main body 110. Likewise, the lower support layer 150 is attached to the lower surface of the body 110. A lower through hole 173 is formed in the lower support layer 150 at positions corresponding to the main through holes 171 formed in the main body 110.

The upper support layer 140 and the lower support layer 150 are each made of a material having elasticity. In the present invention, the upper support layer 140 is formed by sequentially stacking the upper film layer 141 and the upper silicon layer 142 And the lower support layer 150 is formed by sequentially laminating the lower film layer 151 and the lower silicon layer 152. In this case,

Each of the bidirectional conductive pins 160 is received in the main through hole 171 so that the upper surface of the bidirectional conductive pin 160 is exposed upward through the upper through hole 172 of the upper support layer 140. The lower surface of the bidirectional conductive fin 160 is exposed downward through the lower through hole 173 of the lower support layer 150. Here, the upper region of the bidirectional conductive pin 160 is supported by the upper support layer 140, and the lower region is supported by the lower support layer 150.

When the bidirectional conductive pattern module 100 according to the present invention is applied to a semiconductor test socket for testing a semiconductor device, the ball of the semiconductor device that presses downward from the upper direction is bi- The conductive support pin 160 contacts the upper surface of the conductive pin 160 and presses it down. The bidirectional conductive pin 160 is supported by the upper support layer 140 to enable elastic support.

Similarly, when the bidirectional conductive pattern module 100 according to the present invention is pressed from the upper direction to the lower direction in the test process of the semiconductor device, when the lower surface of the bidirectional conductive pin 160 contacts the terminals of the inspection circuit board, (150) is elastically supported.

When the bidirectional conductive pattern module 100 according to the present invention is applied to a semiconductor test socket or interposer, the bidirectional conductive pin 160 is electrically connected to the semiconductor element and the inspection circuit board, or between the CPU and the board The conductive layers 113 and 114 of the plurality of base substrates 111 and the inner conductive wall 120 are connected to the external ground so that the conductive layers 113 and 114 of the base substrate 111 are electrically connected to the ground, So that it is possible to operate at a high speed as well as a stable operation in which noise and mutual interference are eliminated.

Further, by adjusting the stacking thickness of the base substrate 111, for example, by adjusting the number of the stacked base substrates 111 or by adjusting the thickness of the insulating layer 112 of the base substrate 111, 100 can be adjusted according to the conditions of the bidirectional conductive pattern module 100.

When the bi-directional conductive pin 160 is manufactured to have a size smaller than that of the conventional pogo-pin according to the structure to be described later, the limit of the pitch of the existing pogo pin type and the length in the vertical direction It is possible to overcome the limitations and realize various sizes when applied to semiconductor test sockets or interposers.

In the above-described embodiment, the inner conductive walls 120 are formed in the entirety of the plurality of main through-holes 171, and the conductive layers 113 and 114 are electrically connected to each other. It goes without saying that the entire conductive layers 113 and 114 of the plurality of base substrates 111 can be electrically connected to each other even if the inner conductive wall 120 is formed only in at least one of the main through holes 171.

In the first embodiment of the present invention, the inner diameter of the upper through hole 172 and the lower through hole 173 is smaller than the inner diameter of the main through hole 171 (FIG. 5 is an enlarged view and FIG. (See FIG. Accordingly, the upper and lower regions of the bidirectional conductive fin 160 are supported by the upper support layer 140 and the lower support layer 150, respectively, and the intermediate region is supported in the space inside the main through- The separated state is maintained, so that the movement in the inside becomes free.

Accordingly, when the bidirectional conductive pattern module 100 according to the first exemplary embodiment of the present invention is applied to a semiconductor test socket, the bidirectional conductive pattern module 100 according to the first exemplary embodiment of the present invention can be mounted on the semiconductor test socket through the openings in the main through- The possibility of flow increases and the intermediate region of the bidirectional conductive pin 160 may be constituted by a connecting portion 163 which will be described later or the connecting portion 163 and the resilient force of the spring when a conventional pogo- So that more stable testing can be performed.

Further, in the present invention, the main through hole 171 can be filled with a silicone material having elasticity. In this case, when the bidirectional conductive pattern module 100 according to the present invention is applied to the interposer, it is possible to maintain a more stable contact between the CPU and the board for a long period of time do.

Referring again to FIGS. 4 and 5, the bidirectional conductive pattern module 100 according to the first embodiment of the present invention may include a ground portion 180.

The ground portion 180 is electrically connected to the conductive layers 113 and 114 and the inner conductive wall 120. As described above, when the bidirectional conductive pattern module 100 according to the present invention is applied to a semiconductor test socket, the ground portion 180 is connected to the ground of the inspection circuit board, 113 and 114 and the inner conductive wall 120 to the ground.

5, the ground unit 180 according to the first embodiment of the present invention includes a first ground penetrating hole 181, a second ground penetrating hole 183, a third ground penetrating hole 184, And a ground conductive wall 182 as shown in FIG.

The first ground penetrating hole 181 is vertically formed in the main body 110. Here, the first ground penetrating hole 181 may be formed when the main penetrating hole 171 is formed, and a detailed description thereof will be described later.

The second ground penetrating hole 183 is vertically formed in the upper support layer 140 and is formed at a position corresponding to the first ground penetrating hole 181. Similarly, the third ground penetrating hole 184 is formed in the lower supporting layer 150 in the vertical direction, and is formed at a position corresponding to the first ground penetrating hole 181. Here, the second ground penetration hole 183 and the third ground penetration hole 184 may be formed together when the upper penetration hole 172 and the lower penetration hole 173 are formed, and a detailed description thereof will be described later.

The ground conductive wall 182 is applied to the inner wall surface of the first ground penetrating hole 181 and is electrically connected to the conductive layers 113 and 114. Accordingly, when the ground conductive wall 182 is connected to the external ground, the conductive layers 113 and 114 of the bidirectional conductive pattern module 100 according to the present invention can be operated as the ground.

Hereinafter, a method of manufacturing the bidirectional conductive pattern module 100 according to the first embodiment of the present invention will be described in detail with reference to FIGS. 6 to 9. FIG.

First, as shown in Fig. 6, a plurality of base substrates 111 are provided, and a plurality of base substrates 111 are stacked in a vertical direction to form a main body 110. Fig. In the present invention, as shown in FIG. 6, four base boards 111 are stacked to form the main body 110. However, as described above, the number of the base boards 111 Can be determined. Here, the lamination of the base substrate 111 can be attached between the base substrate 111 using an adhesive.

6 shows an example in which the base substrate 111 is formed in the form of a printed circuit board on which conductive layers 113 and 114 are formed on both sides of the insulating layer 112. However, It is of course possible to use a printed circuit board on which conductive layers 113 and 114 are formed.

When the main body 110 is completed through the stacking of the base substrate 111 as described above, a plurality of main through holes 171 are formed in the main body 110, as shown in FIG. Here, the first ground penetrating hole 181 may be formed when the main penetrating hole 171 is formed. Figs. 8 and 9 are views showing a manufacturing process through a cross section according to Fig. 7 VIII-VIII.

8 (a), when the main through hole 171 and the first ground through hole 181 are formed in the main body 110, as shown in FIG. 8 (a), on the inner wall surface of each main through hole 171, The inner conductive wall 120 is formed as shown in (b) of FIG. The inner conductive wall 120 can be formed by sequentially performing nickel plating and gold plating. The conductive layers 113 and 114 of the respective base substrates 111 are electrically connected to each other through the formation of the inner conductive walls 120. 8B illustrates an example in which the inner conductive wall 120 is formed on the inner wall surface of all the main through holes 171. However, as described above, It goes without saying that the inner conductive wall 120 may be formed on the wall surface. In addition, in the plating process for forming the inner conductive wall 120, a ground conductive wall 182 may be formed together with the inner wall surface of the first ground penetrating hole 181.

When the inner conductive wall 120 is formed on the inner wall surface of the main through hole 171, the inner wall surface of the inner conductive wall 120 (or the inner wall surface of the main through hole 171) The inner insulating wall 130 is formed. The inner insulating wall 130 may be formed by applying an insulating material, for example, silicon.

A first ground penetrating hole 181 is formed in the inner wall surface of the ground conductive wall 182 formed on the inner wall surface of the first ground penetrating hole 181 so as not to form an insulating wall, The process of forming the inner insulating wall 130 may proceed.

9A, the upper supporting layer 140 is formed on the upper portion of the main body 110 and the lower supporting layer 140 is formed on the lower portion of the main body 110. [ 150). Here, the upper support layer 140 may be formed by attaching the upper film layer 141 to the upper portion of the main body 110 and applying the upper silicon layer 142. Likewise, the lower support layer 150 may be formed by attaching the lower film layer 151 to the lower portion of the main body 110 and applying the lower silicon layer 152.

9B, an upper through hole 172 and a lower through hole 173 are formed in the upper support layer 140 and the lower support layer 150, respectively. At this time, the inner diameter of the upper through-hole 172 and the lower through-hole 173 may be smaller than the inner diameter of the main through-hole 171 as described above. Here, the second ground penetrating hole 183 and the second ground penetrating hole 184 may be formed together in the process of forming the upper penetrating hole 172 and the lower penetrating hole 173.

When the bidirectional conductive pins 160 are inserted into the respective upper through holes 172, the main through holes 171 and the lower through holes 173, the bidirectional conductive pattern module 100 as shown in FIG. .

After the insertion of the bidirectional conductive pin 160, the upper surface of the upper support layer 140, that is, the upper silicon layer 142 and the bidirectional conductive pin 160 are fixed using silicon or the like, The bidirectional conductive fin 160 is supported by the upper support layer 140 and the lower support layer 150 by fixing the lower surface of the lower silicon layer 152 and the bidirectional conductive pin 160 using silicon or the like .

In the above-described embodiment, it is described that only the inner wall surface of the main through hole 171 is plated in the process of forming the inner conductive wall 120. However, the upper surface and the lower surface of the main body 110 may be plated. The insulating layer is formed only on the inner wall surface of the main through hole 171 and / or the inner wall surface of the inner conductive wall 120 in the process of forming the inner insulating wall 130. However, An insulating layer may be formed on both the surface and the lower surface.

Hereinafter, the structure of the bidirectional conductive pattern module 100a according to the second embodiment of the present invention will be described with reference to FIG. Here, in describing the configuration of the bidirectional conductive pattern module 100a according to the second embodiment of the present invention, the detailed description of the configuration corresponding to the configuration of the first embodiment can be omitted.

10, the bidirectional conductive pattern module 100a according to the second embodiment of the present invention includes a main body 110a, a plurality of main through holes 171a, an inner insulating wall 130a, An upper support layer 140a, a lower support layer 150a, and a bi-directional conductive pin 160a.

The main body 110a includes an insulating layer 112a made of an insulating material and conductive layers 113a and 114a formed on both side surfaces of the insulating layer 112a. That is, in the bidirectional conductive pattern module 100a according to the second embodiment of the present invention, one base substrate 111a forms the main body 110a, unlike the first embodiment. In the second embodiment of the present invention, a printed circuit board in which conductive layers 113a and 114a are formed on both sides of an insulating layer 112a is applied to the main body 110a. Here, the thickness of the main body 110a is adjustable by adjusting the thickness of the insulating layer 112a.

A plurality of main through holes 171a are formed to pass through the main body 110a in the vertical direction (see FIG. 11A). As in the first embodiment, the number of the main through holes 171a may vary depending on the terminals of the semiconductor device to be tested and the pins of the CPU.

The inner insulating wall 130a is applied to the inner wall surface of each of the main through holes 171a, and is made of an insulating material. In the present invention, the insulating silicon is formed inside, but the material thereof is not limited thereto. The conductive layers 113a and 114a of the main body 110a and the bidirectional conductive pins 160a inserted into the main through hole 171a are physically isolated through the inner insulating wall 130a to prevent mutual electrical connection .

The inner conductive wall 120a is formed between the inner wall surface of the main through hole 171a and the inner insulating wall 130a to electrically connect the conductive layers 113a and 114a on both sides of the main body 110a. When the bidirectional conductive pattern module 100a according to the present invention is applied to a semiconductor test socket or applied to an interposer, the conductive layer 113a and the conductive layer 113a of the main body 110a are electrically connected to each other. When the layers 113a and 114a are used as a ground, a high-speed implementation is possible. Here, the inner conductive wall 120a may be formed by sequentially performing nickel plating and gold plating.

The upper support layer 140a is attached to the upper surface of the main body 110a. An upper through hole 172a is formed in the upper support layer 140a at a position corresponding to the main through hole 171a formed in the main body 110a. Likewise, the lower support layer 150a is attached to the lower surface of the main body 110a. A lower through hole 173a is formed in the lower support layer 150a at positions corresponding to the main through holes 171a formed in the main body 110a.

The upper support layer 140a and the lower support layer 150a are each made of a material having elasticity. Like the first embodiment, the upper support layer 140a includes the upper film layer 141a and the upper silicon layer 142a And the lower support layer 150a is formed by sequentially laminating the lower film layer 151a and the lower silicon layer 152a.

Each bidirectional conductive pin 160a is received in the main through hole 171a so that the upper surface of the bidirectional conductive pin 160a is exposed upward through the upper through hole 172a of the upper support layer 140a. The lower surface of the bidirectional conductive pin 160a is exposed downward through the lower through hole 173a of the lower support layer 150a. Here, the upper region of the bidirectional conductive fin 160a is supported by the upper support layer 140a, and the lower region thereof is supported by the lower support layer 150a.

According to the above configuration, when the bidirectional conductive pattern module 100a according to the present invention is applied to a semiconductor test socket for testing a semiconductor device, the ball of the semiconductor device, which presses downward from the upper direction, The conductive pin 160a contacts the upper surface of the conductive pin 160a and presses it down. The bidirectional conductive pin 160a is supported by the upper support layer 140a to enable elastic support.

Similarly, when the bidirectional conductive pattern module 100a according to the present invention is pressed from the upper direction to the lower direction in the test process of the semiconductor device, when the lower surface of the bidirectional conductive pin 160a contacts the terminals of the inspection circuit board, (150a) is elastically supported.

When the bidirectional conductive pattern module 100a according to the present invention is applied to a semiconductor test socket or interposer, the bidirectional conductive pin 160a is electrically connected to the semiconductor element and the inspection circuit board, or between the CPU and the board The conductive layers 113a and 114a formed on both sides of the insulating layer 112a of the main body 110a and the inner conductive wall 120a are electrically connected to both the external ground and the external connection conductive pin 160a. Directional conductive pin 160 so that it can operate at high speed as well as stable operation in which no noise or mutual interference is eliminated.

The thickness of the bidirectional conductive pattern module 100a can be adjusted by adjusting the thickness of the insulating layer 112a constituting the main body 110a so that the bidirectional conductive pattern module 100a can be manufactured Lt; / RTI >

When the bidirectional conductive pin 160a is manufactured to have a size smaller than that of the conventional pogo-pin according to the structure to be described later, the limit of the pitch of the existing pogo pin type and the length of the pogo- It is possible to overcome the limitations and realize various sizes when applied to semiconductor test sockets or interposers.

In the above-described embodiment, the inner conductive walls 120a are formed on the entirety of the plurality of main through-holes 171a to electrically connect the conductive layers 113a and 114a. It goes without saying that the entire conductive layers 113a and 114a of the plurality of base boards 111a can be electrically connected to each other even if the inner conductive wall 120a is formed only in at least one of the main through holes 171a.

Also, in the present invention, the main through hole 171a can be filled with a silicone material having elasticity. When the bidirectional conductive pattern module 100a according to the present invention is applied to the interposer, it is possible to maintain a more stable contact between the CPU and the board for a long period of time do.

Also, as in the first embodiment, the ground portion 180 of the first embodiment can be applied to the second embodiment, and in the manufacturing process of the second embodiment to be described later, corresponding to the ground portion 180 of the first embodiment Of course, can be applied.

Hereinafter, a method of manufacturing the bidirectional conductive pattern module 100a according to the second embodiment of the present invention will be described with reference to FIGS. 11 and 12. FIG.

First, as shown in Fig. 11 (a), a main body 110a on which an insulating layer 112a and conductive layers 113a and 114a are formed on both sides thereof is provided. Then, as shown in Fig. 11 (b), a main through hole 171a is formed in the main body 110a.

Then, the inner conductive wall 120a is formed on the inner wall surface of each of the main through-holes 171a as shown in Fig. 11 (c). The inner conductive wall 120a can be formed by sequentially performing nickel plating and gold plating. The conductive layers 113a and 114a formed on both sides of the insulating layer 112a are electrically connected to each other through the formation of the inner conductive wall 120a. 11C shows an example in which the inner conductive wall 120a is formed on the inner wall surface of all the main through holes 171a. However, as described above, It goes without saying that the inner conductive wall 120a may be formed on the wall surface.

When the inner conductive wall 120a is formed on the inner wall surface of the main through hole 171a, the inner wall surface of the inner conductive wall 120a (or the inner wall surface of the main through hole 171a) As described above, the inner insulating wall 130a is formed. The upper film layer 141a and the lower film layer 151 are formed on the upper surface and the lower surface of the main body 110a (refer to FIG. 12 (a)), The upper silicon layer 142a and the lower silicon layer 152a are formed on the lower surface of the lower film layer 151a to form the upper support layer 140a and the lower support layer 150a as shown in Figure 12 (b) .

12C, an upper through hole 172a and a lower through hole 173a are formed in the upper support layer 140a and the lower support layer 150a, respectively. At this time, the inner diameter of the upper through-hole 172a and the lower through-hole 173a can be made smaller than the inner diameter of the main through-hole 171a.

When the bidirectional conductive pin 160a is inserted into each of the upper through holes 172a, the main through hole 171a and the lower through hole 173a, the bidirectional conductive pattern module 100a as shown in FIG. .

After the insertion of the bidirectional conductive pin 160a, the upper surface of the upper support layer 140a, that is, the upper silicon layer 142a and the bidirectional conductive pin 160a are fixed using silicon or the like, The bidirectional conductive pin 160a is supported by the upper support layer 140a and the lower support layer 150a by fixing the lower surface of the lower silicon layer 152a and the bidirectional conductive pin 160a using silicon or the like .

Hereinafter, embodiments of the bidirectional conductive pin 160 according to the present invention will be described in detail with reference to FIGS. 13 to 17. FIG.

Referring to FIG. 13, the bidirectional conductive fin 160 may include an upper contact portion 161, a lower contact portion 162, and a connection portion 163.

The upper contact portion 161 is formed by rolling a conductive thin plate in a cylindrical shape about the vertical direction. Likewise, the lower contact portion 162 is formed by rolling the conductive thin plate so as to have a cylindrical shape about the axis in the up-and-down direction, and is disposed apart from the lower portion of the upper contact portion 161.

At this time, the connection portion 163 electrically connects the upper contact portion 161 and the lower contact portion 162, and is connected to the upper contact portion 161 and the lower contact portion 162 at different positions in the circumferential direction, And connects the upper contact portion 161 and the lower contact portion 162 in a winding manner.

14 is a view showing an example of the base thin plate 10 for manufacturing the bidirectional conductive pin 160 shown in Fig. The base thin plate 10 as shown in Fig. 14 is manufactured through patterning of a thin plate having conductivity. The base thin plate 10 includes an upper pattern 11, a lower pattern 12, and a connection pattern 13, as shown in Fig. When the upper thin plate 10 is circularly shaped from the left side to the right side of FIG. 14 through the mold and the lower thin plate is rounded to the left in the right direction of FIG. 14, the upper contact portion 161 And a lower contact portion 162 are respectively formed.

Here, in the process of cutting the upper pattern 11 and the lower pattern 12 in the vertical direction, the connecting pattern 13 is positioned to be curled along the circumferential direction, and the finally formed connecting portions 163 are mutually different in the circumferential direction Position.

When the bidirectional conductive pin 160 is applied to the bidirectional conductive pattern module 100, the upper surface of the upper contact portion 161 is exposed upward through the upper through hole 172, The lower surface of the contact portion 162 is exposed downward through the lower through hole 173 and the connecting portion 163 is received in the main through hole 171. [

The connection portion 163 is accommodated in the main through hole 171 in the circumferential direction so as to have an elastic role when pressed downwardly, that is, the same as the spring of the conventional pogo-pin .

As described above, the base thin plate 10 is formed through patterning of the conductive thin plate, and the bidirectional conductive pin 160 is formed by a method such as a metal mold, thereby making it possible to manufacture the small size of the conventional pogo-pin.

Here, the bidirectional conductive pin 160 may include a depression 164 that is recessed or cut inward at the outer diameter of the upper contact portion 161. [ As a result, when the bidirectional conductive fin 160 is inserted into the main through-hole 171 of the bidirectional conductive pattern module 100 and then supported by the upper support layer 140, the upper support layer 140, The upper contact layer 142 is inserted into the depression 164 (see FIG. 5) so that the upper support layer 140 catches the upper contact portion 161.

The upper support layer 140 elastically supports the upper contact portion 161 in the vertical direction when the upper support layer 140 catches the upper contact portion 161 and the upper contact portion 161 is pressed downward from the upper portion. It is possible to perform the function of

Here, the configuration of the depression 164 may be applied to the bidirectional conductive pin 160a according to another embodiment to be described later, and may be applied to other types of pins that can be applied to the bidirectional conductive pattern module 100 according to the present invention. Do.

15 is a view showing the configuration of a bidirectional conductive pin 160a according to another embodiment of the present invention. As shown in FIG. 15, the bidirectional conductive pin 160a according to another embodiment of the present invention may include an upper contact portion 161a, a lower contact portion 162a, and a connection portion 163a.

Here, the upper contact portion 161a and the lower contact portion 162a are the same as those in the above-described embodiment in that a thin plate having conductivity is formed by being vertically curled. Here, the connection portion 163a electrically connects the upper contact portion 161a and the lower contact portion 162a, and has a fin shape in a space between the upper contact portion 161a and the lower contact portion 162a.

FIG. 16 is a view for explaining the manufacturing process of the bidirectional conductive pin 160a shown in FIG. Referring to Fig. 15, a thin plate having conductivity is subjected to a patterning process to manufacture a base thin plate 10a. In FIG. 15 (a), three base thin plates 10a are simultaneously formed on a thin plate.

Here, the base thin plate 10a may include an upper pattern 11a, a lower pattern 12a, and a connection pattern 13a. For the sake of convenience, the base plate 10a is patterned through the connection plate between the upper and lower transverse plates.

Then, the upper and lower patterns 11a and 12a are vertically oriented to form an upper contact portion 161a and a lower contact portion 162a as shown in FIG. 16 (b). 16 (c), the connection pattern 13a is formed by being pushed in the direction A to form the connection portion 163a. Then, when the connecting plate is cut, the bidirectional conductive pin 160a can be manufactured.

In the above-described embodiments, examples of the bidirectional conductive pins 160 and 160a are described with reference to FIGS. 13 to 16. However, the bidirectional conductive pins 160 and 160a may have various shapes. For example, even if a conventional pogo-pin is applied, the high-speed operation will be possible by the ground function.

Meanwhile, in the above-described embodiments, the inner conductive wall 120 is formed inside the main through-hole 171. That is, the inner conductive wall 120 is formed in at least one of the main through holes 171 in which the bidirectional conductive fins 160 are inserted. However, even if a sub through hole (not shown) is formed in the main body 110 so that the bidirectional conductive fin 160 is not inserted and the inner conductive wall 120 is formed on the inner wall surface of the sub through hole, the conductive layers 113, May be electrically connected to each other.

Although several embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various modifications may be made without departing from the principles and spirit of the invention . The scope of the invention will be determined by the appended claims and their equivalents.

100,100a: bi-directional conductive pattern module
110, 110a: main body 111: base substrate
112, 112a: insulating layer 113, 113a, 114, 114a:
120, 120a: inner conductive wall 130, 130a: inner insulating wall
140, 140a: upper support layer 141, 141a: upper film layer
142, 142a: upper silicon layer 150, 150a:
151, 151a: lower film layer 152, 152a: lower silicon layer
160, 160a: bi-directional conductive pin 161, 161a:
162, 162a: lower contact portions 163, 163a:
171, 171a: main through hole 172, 172a: upper through hole
173, 173a: Lower through hole

Claims (12)

In the bidirectional conductive pattern module,
A plurality of base boards having an insulating layer made of an insulating material and a conductive layer formed on one side surface or both side surfaces of the insulating layer are stacked in a vertical direction;
A plurality of main through-holes formed in the main body in a vertical direction;
An inner insulating wall of an insulating material applied to an inner wall surface side of each of the main through holes;
An inner conductive wall formed between at least one of the plurality of main through holes and between the inner wall surface and the inner insulating wall to electrically connect the conductive layers of the plurality of base substrates;
An upper support layer of an elastic material having elasticity attached to an upper surface of the main body and having a plurality of upper through holes corresponding to the plurality of main through holes;
A lower supporting layer of an elastic material having elasticity attached to a lower surface of the main body and having a plurality of lower through holes corresponding to the plurality of main through holes;
The upper surface of the upper support layer and the lower support layer are exposed in a plurality of the main through holes, respectively, while the upper surface is exposed in the upper direction through the upper through hole and the lower surface is exposed in the lower direction through the lower through hole. And a plurality of bidirectional conductive pins, each of the bidirectional conductive pins being supported by the conductive pattern. In the bidirectional conductive pattern module,
A plurality of base boards having an insulating layer made of an insulating material and a conductive layer formed on one side surface or both side surfaces of the insulating layer are stacked in a vertical direction;
A plurality of main through-holes formed in the main body in a vertical direction;
An inner insulating wall of an insulating material applied to an inner wall surface side of each of the main through holes;
At least one sub through hole formed to pass through the main body in a vertical direction;
An inner conductive wall which is applied to an inner wall surface of the sub through hole to electrically connect the conductive layers of the plurality of base substrates;
An upper support layer of an insulating material attached to an upper surface of the main body and having a plurality of upper through holes corresponding to the plurality of main through holes;
A lower supporting layer of an insulating material attached to a lower surface of the main body and having a plurality of lower through holes corresponding to the plurality of main through holes;
The upper surface of the upper support layer and the lower support layer are exposed in a plurality of the main through holes, respectively, while the upper surface is exposed in the upper direction through the upper through hole and the lower surface is exposed in the lower direction through the lower through hole. And a plurality of bidirectional conductive pins, each of the bidirectional conductive pins being supported by the conductive pattern. In the bidirectional conductive pattern module,
A main body having an insulating layer made of an insulating material and a conductive layer formed on both side surfaces of the insulating layer;
A plurality of main through-holes formed in the main body in a vertical direction;
An inner insulating wall of an insulating material applied to an inner wall surface side of each of the main through holes;
An inner conductive wall formed between at least one of the plurality of main through holes and between the inner wall surface and the corresponding insulating wall to electrically connect the conductive layers on both sides;
An upper support layer of an elastic material having elasticity attached to an upper surface of the main body and having a plurality of upper through holes corresponding to the plurality of main through holes;
A lower supporting layer of an elastic material having elasticity attached to a lower surface of the main body and having a plurality of lower through holes corresponding to the plurality of main through holes;
The upper surface of the upper support layer and the lower support layer are exposed in a plurality of the main through holes, respectively, while the upper surface is exposed in the upper direction through the upper through hole and the lower surface is exposed in the lower direction through the lower through hole. And a plurality of bidirectional conductive pins, each of the bidirectional conductive pins being supported by the conductive pattern. The method according to claim 1 or 3,
Wherein the inner conductive wall is formed in each of the plurality of main through-holes. 4. The method according to any one of claims 1 to 3,
Wherein each of the bidirectional conductive pins is electrically insulated from the conductive layers by the respective inner insulating walls in the main through hole and electrically connected to each other and the inner conductive wall is operable as a ground Directional conductive pattern module. 4. The method according to any one of claims 1 to 3,
Wherein the inner diameter of the upper through hole and the lower through hole is smaller than the inner diameter of the main through hole. 4. The method according to any one of claims 1 to 3,
Wherein the upper support layer comprises an upper film layer and an upper silicon layer sequentially formed from an upper surface of the body;
Wherein the lower support layer comprises a lower film layer and a lower silicon layer sequentially formed from a lower surface of the body. 4. The method according to any one of claims 1 to 3,
Wherein the main through-hole is filled with a silicone material having elasticity. 4. The method according to any one of claims 1 to 3,
And a ground portion electrically connected to the conductive layer and connected to an external ground to connect the conductive layer to the ground. 10. The method of claim 9,
The ground portion
A first ground penetrating hole penetrating the main body in a vertical direction,
A second ground penetrating hole and a third ground penetrating hole formed in the upper supporting portion and the lower supporting portion and communicating with the first ground penetrating hole,
And a ground conductive wall which is applied to the inner wall of the first ground penetrating hole and is electrically connected to the conductive layer. 4. The method according to any one of claims 1 to 3,
The bidirectional conductive pin
An upper contact portion formed by curling the thin plate having conductivity in a cylindrical shape about the vertical direction as an axis,
A lower contact portion which is formed by winding a conductive thin plate around an axis in the vertical direction and is spaced apart from a lower portion of the upper contact portion,
And a connecting portion electrically connecting the upper contact portion and the lower contact portion and having a shape bent into a space between the upper contact portion and the lower contact portion;
The upper surface of the upper contact portion is exposed upward through the upper through hole,
The lower surface of the lower contact portion is exposed downward through the lower through hole,
Wherein the connection portion is received in the main through-hole. 4. The method according to any one of claims 1 to 3,
The bidirectional conductive pin
An upper contact portion formed by curling the thin plate having conductivity in a cylindrical shape about the vertical direction as an axis,
A lower contact portion which is formed by winding a conductive thin plate around an axis in the vertical direction and is spaced apart from a lower portion of the upper contact portion,
And at least one connection portion for electrically connecting the upper contact portion and the lower contact portion;
Wherein the connecting portion is connected to the upper contact portion and the lower contact portion at different positions in the circumferential direction and connects the upper contact portion and the lower contact portion in a winding manner along the circumferential direction,
The upper surface of the upper contact portion is exposed upward through the upper through hole,
The lower surface of the lower contact portion is exposed downward through the lower through hole,
Wherein the connection portion is received in the main through-hole.
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KR102158507B1 (en) * 2019-07-09 2020-09-22 주식회사 이노글로벌 Test socket and manufacturing method thereof
KR102191702B1 (en) * 2019-09-06 2020-12-16 주식회사 이노글로벌 Test socket in which empty space is formed
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WO2021033824A1 (en) * 2019-08-22 2021-02-25 주식회사 이노글로벌 Test socket with replaceable portion
KR102191702B1 (en) * 2019-09-06 2020-12-16 주식회사 이노글로벌 Test socket in which empty space is formed
KR102080832B1 (en) * 2019-10-02 2020-02-24 황동원 Spring contact and test socket with the spring contact
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