KR20180085015A - 메트롤로지 타겟, 방법 및 장치, 컴퓨터 프로그램 및 리소그래피 시스템 - Google Patents

메트롤로지 타겟, 방법 및 장치, 컴퓨터 프로그램 및 리소그래피 시스템 Download PDF

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Publication number
KR20180085015A
KR20180085015A KR1020187018148A KR20187018148A KR20180085015A KR 20180085015 A KR20180085015 A KR 20180085015A KR 1020187018148 A KR1020187018148 A KR 1020187018148A KR 20187018148 A KR20187018148 A KR 20187018148A KR 20180085015 A KR20180085015 A KR 20180085015A
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KR
South Korea
Prior art keywords
computer program
lithography system
metrology target
metrology
target
Prior art date
Application number
KR1020187018148A
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English (en)
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KR102170137B1 (ko
Inventor
빔 티보 텔
프랭크 스탈스
Original Assignee
에이에스엠엘 네델란즈 비.브이.
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Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20180085015A publication Critical patent/KR20180085015A/ko
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Publication of KR102170137B1 publication Critical patent/KR102170137B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020187018148A 2015-11-27 2016-11-07 메트롤로지 타겟, 방법 및 장치, 컴퓨터 프로그램 및 리소그래피 시스템 KR102170137B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP15196854.2 2015-11-27
EP15196854 2015-11-27
PCT/EP2016/076835 WO2017089105A1 (en) 2015-11-27 2016-11-07 Metrology target, method and apparatus, computer program and lithographic system

Publications (2)

Publication Number Publication Date
KR20180085015A true KR20180085015A (ko) 2018-07-25
KR102170137B1 KR102170137B1 (ko) 2020-10-27

Family

ID=54705532

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187018148A KR102170137B1 (ko) 2015-11-27 2016-11-07 메트롤로지 타겟, 방법 및 장치, 컴퓨터 프로그램 및 리소그래피 시스템

Country Status (7)

Country Link
US (1) US9977344B2 (ko)
KR (1) KR102170137B1 (ko)
CN (1) CN108292108B (ko)
IL (1) IL259564B (ko)
NL (1) NL2017739A (ko)
TW (1) TWI620978B (ko)
WO (1) WO2017089105A1 (ko)

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CN109478021B (zh) * 2016-07-11 2021-01-01 Asml荷兰有限公司 用于确定性能参数的指纹的方法和设备
EP3447580A1 (en) * 2017-08-21 2019-02-27 ASML Netherlands B.V. Method of calibrating focus measurements, measurement method and metrology apparatus, lithographic system and device manufacturing method
EP3451061A1 (en) 2017-09-04 2019-03-06 ASML Netherlands B.V. Method for monitoring a manufacturing process
US11029610B2 (en) * 2017-09-28 2021-06-08 Asml Netherlands B.V. Lithographic method
US10483214B2 (en) 2018-01-03 2019-11-19 Globalfoundries Inc. Overlay structures
EP3637187A1 (en) * 2018-10-12 2020-04-15 ASML Netherlands B.V. Method for measuring focus performance of a lithographic apparatus
CN113196175A (zh) * 2018-12-18 2021-07-30 Asml荷兰有限公司 测量图案化过程的参数的方法、量测设备、目标
EP3671346A1 (en) * 2018-12-18 2020-06-24 ASML Netherlands B.V. Method of measuring a parameter of a patterning process, metrology apparatus, target
US11914290B2 (en) 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
CN110824865B (zh) * 2019-11-29 2021-06-18 中国科学院微电子研究所 对准误差测量方法及装置
US11809090B2 (en) * 2020-01-30 2023-11-07 Kla Corporation Composite overlay metrology target
US20240118606A1 (en) * 2021-11-27 2024-04-11 Kla Corporation Improved targets for diffraction-based overlay error metrology
WO2023113850A1 (en) * 2021-12-17 2023-06-22 Kla Corporation Overlay target design for improved target placement accuracy

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US6536130B1 (en) * 2001-11-07 2003-03-25 United Microelectronics Corp. Overlay mark for concurrently monitoring alignment accuracy, focus, leveling and astigmatism and method of application thereof
KR20040025868A (ko) * 2002-09-20 2004-03-26 에이에스엠엘 네델란즈 비.브이. 디바이스 검사방법 및 장치
KR20150023502A (ko) * 2012-05-29 2015-03-05 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 기판, 리소그래피 시스템 및 디바이스 제조 방법
WO2015078669A1 (en) * 2013-11-26 2015-06-04 Asml Netherlands B.V. Method, apparatus and substrates for lithographic metrology

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CN1203524C (zh) * 2001-11-30 2005-05-25 联华电子股份有限公司 叠合标记及其应用方法
EP1400855A3 (en) * 2002-09-20 2009-04-08 ASML Netherlands B.V. Device inspection
US7678516B2 (en) 2004-07-22 2010-03-16 Kla-Tencor Technologies Corp. Test structures and methods for monitoring or controlling a semiconductor fabrication process
US7277172B2 (en) * 2005-06-06 2007-10-02 Kla-Tencor Technologies, Corporation Measuring overlay and profile asymmetry using symmetric and anti-symmetric scatterometry signals
US7619737B2 (en) * 2007-01-22 2009-11-17 Asml Netherlands B.V Method of measurement, an inspection apparatus and a lithographic apparatus
NL1036245A1 (nl) 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
NL1036597A1 (nl) 2008-02-29 2009-09-01 Asml Netherlands Bv Metrology method and apparatus, lithographic apparatus, and device manufacturing method.
JP5412528B2 (ja) 2008-12-30 2014-02-12 エーエスエムエル ネザーランズ ビー．ブイ． 検査方法、検査システム、基板、およびマスク
CN102498441B (zh) 2009-07-31 2015-09-16 Asml荷兰有限公司 量测方法和设备、光刻系统以及光刻处理单元
KR20120058572A (ko) 2009-08-24 2012-06-07 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 장치, 리소그래피 처리 셀 및 메트롤로지 타겟들을 포함하는 기판
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KR102359050B1 (ko) 2014-02-12 2022-02-08 에이에스엠엘 네델란즈 비.브이. 프로세스 윈도우를 최적화하는 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6536130B1 (en) * 2001-11-07 2003-03-25 United Microelectronics Corp. Overlay mark for concurrently monitoring alignment accuracy, focus, leveling and astigmatism and method of application thereof
KR20040025868A (ko) * 2002-09-20 2004-03-26 에이에스엠엘 네델란즈 비.브이. 디바이스 검사방법 및 장치
KR20150023502A (ko) * 2012-05-29 2015-03-05 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 기판, 리소그래피 시스템 및 디바이스 제조 방법
WO2015078669A1 (en) * 2013-11-26 2015-06-04 Asml Netherlands B.V. Method, apparatus and substrates for lithographic metrology

Also Published As

Publication number Publication date
TW201728991A (zh) 2017-08-16
US20170153558A1 (en) 2017-06-01
CN108292108A (zh) 2018-07-17
US9977344B2 (en) 2018-05-22
WO2017089105A1 (en) 2017-06-01
KR102170137B1 (ko) 2020-10-27
IL259564B (en) 2022-05-01
NL2017739A (en) 2017-06-07
CN108292108B (zh) 2020-06-26
IL259564A (en) 2018-07-31
TWI620978B (zh) 2018-04-11

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