KR20180084508A - Semiconductor device and light emitting device package having thereof - Google Patents

Semiconductor device and light emitting device package having thereof Download PDF

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Publication number
KR20180084508A
KR20180084508A KR1020170008210A KR20170008210A KR20180084508A KR 20180084508 A KR20180084508 A KR 20180084508A KR 1020170008210 A KR1020170008210 A KR 1020170008210A KR 20170008210 A KR20170008210 A KR 20170008210A KR 20180084508 A KR20180084508 A KR 20180084508A
Authority
KR
South Korea
Prior art keywords
layer
light emitting
algan
semiconductor device
semiconductor layer
Prior art date
Application number
KR1020170008210A
Other languages
Korean (ko)
Inventor
음정현
문용태
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020170008210A priority Critical patent/KR20180084508A/en
Publication of KR20180084508A publication Critical patent/KR20180084508A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Abstract

An embodiment of the present invention relates to a semiconductor device and a light emitting device package having the same. The semiconductor device according to the embodiment includes: a substrate; a buffer layer on the substrate; a first conductive semiconductor layer on the buffer layer; an AlGaN based active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The buffer layer includes a first superlattice structure layer having a plurality of pairs of AlN/AlGaN layers or AlGaN/AlGaN layers having a different aluminum composition, and the first conductivity type semiconductor layer may include a first semiconductor pattern of SiNx (x is a positive integer). The embodiment can improve the external appearance and light emitting efficiency by preventing cracks and reducing treading dislocation (TD).
KR1020170008210A 2017-01-17 2017-01-17 Semiconductor device and light emitting device package having thereof KR20180084508A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020170008210A KR20180084508A (en) 2017-01-17 2017-01-17 Semiconductor device and light emitting device package having thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170008210A KR20180084508A (en) 2017-01-17 2017-01-17 Semiconductor device and light emitting device package having thereof

Publications (1)

Publication Number Publication Date
KR20180084508A true KR20180084508A (en) 2018-07-25

Family

ID=63058631

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170008210A KR20180084508A (en) 2017-01-17 2017-01-17 Semiconductor device and light emitting device package having thereof

Country Status (1)

Country Link
KR (1) KR20180084508A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200019502A (en) * 2018-08-14 2020-02-24 엘지이노텍 주식회사 Epitaxial wafer and method for fabricating the same
EP4276921A1 (en) * 2022-05-12 2023-11-15 The Regents of the University of California High efficiency ultraviolet light-emitting devices incorporating a novel multilayer structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200019502A (en) * 2018-08-14 2020-02-24 엘지이노텍 주식회사 Epitaxial wafer and method for fabricating the same
EP4276921A1 (en) * 2022-05-12 2023-11-15 The Regents of the University of California High efficiency ultraviolet light-emitting devices incorporating a novel multilayer structure

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