KR20180076665A - Apparatus and mehod for making interference pattern on the curved surface of solid - Google Patents

Apparatus and mehod for making interference pattern on the curved surface of solid Download PDF

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KR20180076665A
KR20180076665A KR1020160181065A KR20160181065A KR20180076665A KR 20180076665 A KR20180076665 A KR 20180076665A KR 1020160181065 A KR1020160181065 A KR 1020160181065A KR 20160181065 A KR20160181065 A KR 20160181065A KR 20180076665 A KR20180076665 A KR 20180076665A
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curved surface
diffraction slit
pattern
laser beam
light source
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KR1020160181065A
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KR101878574B1 (en
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마용원
신보성
김승철
김규정
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부산대학교 산학협력단
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

The present invention relates to an apparatus and a method for manufacturing an interference pattern of a curved surface solid. More specifically, the purpose of the present invention is to provide an apparatus and a method for manufacturing the interference pattern of the curved surface solid, the apparatus and the method which are capable of manufacturing a uniform interference pattern on the surface of the curved surface solid by using a diffraction grating having the same curved surface as the curved surface solid. According to the present invention, the apparatus includes a light source unit and a pattern means. The light source unit emits a laser beam to the curved surface solid. The pattern means includes: a diffraction slit which is formed in the same curvature as that of the curved surface solid such that the laser beam emitted from the light source unit is irradiated onto the curved surface solid in a predetermined pattern; and a first light shielding film which is extended from the edge of the diffraction slit to be able to block that the laser beam emitted from the light source unit and deviated from an edge of the diffraction slit is exposed to the curved surface solid. Further, in the apparatus, the pattern means additionally includes a second light shielding film which protrudes from an edge of an inner curvature of the diffraction slit to prevent light passing through the diffraction slit from being deviated from the edge of the diffraction slit. The apparatus can compensate an optical path difference in a curved surface of the curved surface solid by irradiating light onto the diffraction slit having the same curvature as that of the curved surface solid. Therefore, the apparatus can increase accuracy of a nano-pattern formed on the curved surface solid.

Description

곡면체의 간섭패턴 제작장치 및 그 방법{Apparatus and mehod for making interference pattern on the curved surface of solid}BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an apparatus and a method for producing an interference pattern of a curved surface,

본 발명은 곡면체의 간섭패턴 제작장치 및 그 방법에 대한 것으로서, 더욱 상세하게는 곡면체와 동일한 곡면을 가진 회절격자를 이용하여 곡면체의 표면에 균일한 간섭패턴을 제작할 수 있는 제작장치 및 그 방법을 제공하는 것을 목적으로 한다.The present invention relates to an apparatus and method for producing an interference pattern of a curved body, and more particularly, to an apparatus and method for producing a uniform interference pattern on a surface of a curved body using a diffraction grating having the same curved surface as the curved body .

일반적으로, 나노패턴 기반 제품 제조를 위해 광 리소그래피나 나노임프린트 공정이 많이 이용되고 있다. 이들 방법들은 평판을 이용하여 미세패턴을 형성한다. Generally, optical lithography or nanoimprint processes are widely used to manufacture nanopattern-based products. These methods use a plate to form a fine pattern.

값 비싼 제품에만 적용되는 나노패턴을 형성하는 기술들은 생산기술의 발달로 저가 제품에도 적용되기 시작하였고, 생산성을 높이기 위해서는 대면적화와 더불어 연속생산의 기술들이 나노패턴을 형성하는 기술들에 요구되고 있다. Techniques for forming nanopatterns, which are applied only to expensive products, have begun to be applied to low-cost products due to the development of production technology. In order to increase productivity, technologies for continuous production have been required for nanopatterning technologies .

하지만, 광 리소그래피나 나노임프린트는 나노패턴을 제작 시에 연속생산이 불가능해 1,000 mm 이상의 제품을 만들기 어렵다. 또한, 제작속도가 원통금형을 이용한 것보다 느려 생산성이 떨어지는 단점이 있다. However, photolithography and nanoimprint can not be continuously produced when fabricating nanopatterns, making it difficult to produce products with a diameter of more than 1,000 mm. In addition, the manufacturing speed is slower than that using a cylindrical mold, and productivity is lowered.

한편, 원통에 노광하는 방법으로 슬릿을 이용하지 않은 직접 노광방법이 있지만, 기존의 방법으로는 레이저 빔의 산란으로 불필요한 부분까지 노광이 되는 문제점이 있다. 또한, 종래에는 곡면에서 광경로차를 보정하여 나노패턴을 연속적으로 형성하지 아니하였으므로 레이저 빔이 중심에서 주변부로 갈수록 광경로차가 커져서 패턴의 정밀도가 나빠지는 문제점이 있다. 여기서 곡면이란 원통과 같이 모든 부분에서 곡률이 일정한 면을 말한다.On the other hand, there is a direct exposure method which does not use a slit in the method of exposing a cylinder, but the conventional method has a problem that an unnecessary portion is exposed due to scattering of the laser beam. In addition, conventionally, since the nano-pattern is not continuously formed by correcting the optical path difference from the curved surface, there is a problem that the optical path difference becomes larger as the laser beam moves from the center to the periphery, resulting in a bad pattern accuracy. Here, a curved surface refers to a surface having a curvature constant at all portions such as a cylinder.

공개특허 제10-2007-0101529호(공개일자 2007년 10월 17일)Published Japanese Patent Application No. 10-2007-0101529 (Published Oct. 17, 2007) 등록특허 제10-1521424호(등록일자 2015년 05월 13일)Registration No. 10-1521424 (registered on May 13, 2015)

본 발명은 상기의 문제점을 해결하기 위한 것이다. 본 발명은 곡면에 광경로차를 보정하여 균일한 나노 패턴을 제작할 수 있는 곡면체의 간섭패턴 제작장치 및 그 방법을 제공하는 것을 목적으로 한다.The present invention is intended to solve the above problems. An object of the present invention is to provide an apparatus and method for producing a curved-surface interference pattern capable of producing a uniform nano-pattern by correcting a light path difference on a curved surface.

본 발명에 따른 곡면체의 간섭패턴 제작장치는 광원부 및 패턴수단을 포함한다. 상기 광원부는 곡면체에 레이저빔을 발사한다. 상기 패턴수단은 상기 광원부에서 발사되는 레이저빔이 상기 곡면체에 일정한 패턴으로 조사되도록 상기 곡면체의 곡률과 동일한 곡률로 형성된 회절슬릿과, 상기 광원부에서 발사되어 상기 회절슬릿의 가장자리를 벗어난 레이저빔이 상기 곡면체에 노광되는 것을 차단할 수 있도록 상기 회절슬릿의 가장자리에서 연장된 제1광차단막을 구비한다.An apparatus for producing an interference pattern of a curved body according to the present invention includes a light source portion and pattern means. The light source unit emits a laser beam to the curved body. Wherein the pattern means includes a diffraction slit formed at a curvature equal to a curvature of the curved surface so that the laser beam emitted from the light source portion is irradiated in a predetermined pattern on the curved surface and a laser beam emitted from the light source portion and deviating from the edge of the diffractive slit, And a first light shielding film extending from an edge of the diffraction slit so as to block exposure of the diffraction slit.

또한, 상기의 곡면체의 간섭패턴 제작장치에 있어서, 상기 패턴수단은 상기 회절슬릿을 통과한 빛이 상기 회절슬릿의 가장자리를 벗어나는 것을 방지하도록 상기 회절슬릿의 내측 곡률의 가장자리에서 돌기된 제2광차단막을 더 구비하는 것이 바람직하다.In the apparatus for fabricating an interference pattern of a curved body, the patterning means may include a second light blocking film formed on the edge of the inner curvature of the diffraction slit so as to prevent light passing through the diffraction slit from deviating from the edge of the diffraction slit, As shown in FIG.

또한, 상기의 곡면체의 간섭패턴 제작장치는 상기 곡면체와 동일한 곡률을 가지며 상기 광원부와 상기 회절슬릿 사이에 위치한 렌즈를 더 포함하는 것이 바람직하다.The apparatus for producing an interference pattern of a curved body may further include a lens having the same curvature as the curved body and located between the light source and the diffraction slit.

본 발명에 따른 곡면체의 간섭패턴 제작방법은 레이저빔발사단계 및 노광단계를 포함한다. 상기 레이저빔발사단계는 광원부에서 레이저빔을 발사한다. 상기 노광단계는 곡면체와 곡률이 동일한 회절슬릿으로 만 상기 레이저빔이 통과하도록 상기 회절슬릿의 가장자리에 광을 차단하는 제1광차단막을 구비하는 패턴수단의 상기 회절슬릿에 상기 레이저빔을 통과시켜서 상기 곡면체에 상기 레이저빔을 노광시킨다.A method of fabricating an interference pattern of a curved body according to the present invention includes a laser beam launching step and an exposure step. The laser beam emitting step emits a laser beam in the light source part. Wherein the exposing step comprises passing the laser beam through the diffraction slit of the patterning means having a first light blocking film for shielding light at the edge of the diffraction slit so that the laser beam passes through only the diffraction slit having the same curvature as the curved body, And the laser beam is exposed to the curved body.

또한, 상기의 곡면체의 간섭패턴 제작방법은 상기 노광단계에서 노광되는 상기 곡면체를 회전시키는 회전단계를 더 포함하는 것이 바람직하다.The method of fabricating an interference pattern of a curved body may further include a rotating step of rotating the curved body exposed in the exposure step.

또한, 상기의 곡면체의 간섭패턴 제작방법은 상기 패턴수단과 상기 광원부를 상기 곡면체의 축방향으로 이동시키는 이동단계를 더 포함하는 것이 바람직하다.The method for fabricating an interference pattern of a curved body may further include moving the pattern unit and the light source unit in an axial direction of the curved body.

또한, 상기의 곡면체의 간섭패턴 제작방법은 상기 회전단계에서 상기 곡면체가 회전될 때 상기 패턴수단과 상기 광원부를 상기 곡면체의 축방향으로 이동시키는 이동단계를 더 포함하는 것이 바람직하다.The method of fabricating an interference pattern of a curved body may further include moving the pattern unit and the light source unit in an axial direction of the curved body when the curved body is rotated in the rotating step.

또한, 상기의 곡면체의 간섭패턴 제작방법에 있어서, 상기 노광단계는 상기 곡면체에 상기 슬릿의 패턴이 교차하여 형성되도록 상기 패턴수단을 여러 각도로 회전하여 반복하여 노광시키는 것이 바람직하다.In addition, in the above-described method for fabricating an interference pattern of a curved body, it is preferable that the exposure step repeatedly exposes the pattern means by rotating the pattern means at a plurality of angles so that the slit pattern is formed to cross the curved body.

또한, 상기의 곡면체의 간섭패턴 제작방법에 있어서, 상기 노광단계는 상기 회절슬릿을 통과한 빛이 상기 회절슬릿의 가장자리를 벗어나는 것을 방지하도록 상기 회절슬릿의 내측 곡률의 가장자리에서 돌기된 제2광차단막을 더 구비하는 상기 패턴수단에 상기 레이저빔을 노광시키는 것이 바람직하다.In addition, in the above-described method for fabricating an interference pattern of a curved body, the exposure step may include a step of forming a second light blocking film, which is protruded from the edge of the inner curvature of the diffraction slit so as to prevent light passing through the diffraction slit from deviating from the edge of the diffraction slit And the patterning means further comprises a patterning means for patterning the patterning means.

본 발명에 의하면 곡면체의 곡률과 동일한 곡률을 가진 회절슬릿에 광을 조사함으로써 곡면체의 곡면에서 광경로차를 보정할 수 있다. 그래서 곡면체에 형성되는 나노패턴의 정밀도를 높일 수 있다.According to the present invention, the light path difference can be corrected on the curved surface of the curved surface by irradiating light to the diffraction slit having the same curvature as the curvature of the curved surface. Therefore, the precision of the nano pattern formed on the curved body can be enhanced.

도 1은 본 발명에 따른 곡면체의 간섭패턴의 제작장치의 일 실시예,
도 2 내지 도 7은 도 1의 장치를 사용하여 간섭패턴을 형성하는 개념도이다.1 shows an embodiment of an apparatus for producing an interference pattern of a curved body according to the present invention,
2 to 7 are conceptual diagrams for forming an interference pattern using the apparatus of FIG.

도 1은 본 발명에 따른 곡면체의 간섭패턴 제작장치의 일 실시예이다. 도 1을 참조하여 곡면체의 간섭패턴 제작장치의 일 실시예를 설명한다. 1 is an embodiment of an apparatus for producing an interference pattern of a curved body according to the present invention. An embodiment of an apparatus for producing an interference pattern of a curved body will be described with reference to Fig.

본 발명에 따른 곡면체의 간섭패턴 제작장치는 곡면체인 원통(1)의 표면에 나노패턴을 형성하기 위한 장치로서, 이를 위하여 광원부(10)와, 패턴수단(20) 및 렌즈(30)를 포함한다.The apparatus for producing an interference pattern of a curved body according to the present invention is an apparatus for forming a nano pattern on the surface of a curved cylinder 1 and includes a light source unit 10, a pattern unit 20 and a lens 30 .

광원부(10)는 레이저빔을 발사한다.The light source unit 10 emits a laser beam.

패턴수단(20)은 회절슬릿(21)과, 제1광차단막(23) 및 제2광차단막(25)를 구비한다. 회절슬릿(21)은 원통(1)의 곡률과 동일한 곡률을 가지며, 회전슬릿(21)의 격자간격은 수백 나노미터에서 수백 마이크로 미터가 될 수 있다. 이때 회절슬릿의 격자의 간격을 조절하여 회전슬릿(21)을 통과하는 빔의 각도를 0°~ 90°사이에서 특정시킬 수 있다. 제1광차단막(23)은 광원부(10)에서 회절슬릿(21)을 벗어나게 발사된 레이저빔이 원통(1)에 노광되는 것을 차단하도록 회절슬릿(21)의 가장자리에서 연장된다. 제2차단막(25)은 회절슬릿(21)을 통과한 빛이 굴절되어 회절슬릿(21)을 벗어나서 원통(1)에 노광되는 것을 방지하도록 회절슬릿(21)의 내측 곡률의 가장자리에서 돌기된다. 제1광차단막(23) 및 제2광차단막(25)은 광을 흡수하거나 차단한다.The pattern means 20 includes a diffraction slit 21, a first light shielding film 23 and a second light shielding film 25. The diffraction slit 21 has the same curvature as the curvature of the cylinder 1, and the lattice spacing of the rotating slits 21 can be several hundreds of nanometers to several hundreds of micrometers. At this time, the interval of the gratings of the diffraction slit can be adjusted to specify the angle of the beam passing through the slit 21 between 0 ° and 90 °. The first light shielding film 23 extends from the edge of the diffraction slit 21 so as to block the laser beam emitted from the diffraction slit 21 in the light source unit 10 from being exposed to the cylinder 1. The second shielding film 25 protrudes from the edge of the inner curvature of the diffraction slit 21 so as to prevent the light passing through the diffraction slit 21 from being refracted out of the diffraction slit 21 and exposed to the cylinder 1. The first light blocking film 23 and the second light blocking film 25 absorb or block light.

렌즈(30)는 광원부(10)에서 발사된 레이저빔이 회절슬릿(21)에 평행하게 진행하도록 원통(1)과 동일한 곡률로 형성되어 광원부(10)와 패턴수단(20) 사이에 배치된다.The lens 30 is formed between the light source 10 and the patterning means 20 so as to have the same curvature as that of the cylinder 1 so that the laser beam emitted from the light source 10 proceeds parallel to the diffraction slit 21.

도 2 내지 도 7을 참조하여 본 발명에 따른 곡면체의 간섭패턴 제작장치를 사용하여 곡면체의 표면에 나노패턴을 형성하는 방법을 설명한다.A method of forming a nanopattern on the surface of a curved body using an apparatus for producing an interference pattern of a curved body according to the present invention will be described with reference to FIGS. 2 to 7. FIG.

도 2에 도시된 바와 같이 원통(1)에 나노패턴을 형성하기 위하여 광원부에서 레이저빔을 발사한다. 광원부에서 발사된 레이저빔은 패턴수단(20)의 회절슬릿을 통과하여 원통(1)의 표면에 노광된다. 이때 패턴수단(20)은 도 1에 도시된 바와 같이 회절슬릿(21)의 가장자리에는 제1광차단막(23)이 형성되어 있기 때문에 회절슬릿(21)을 통과한 빛만 원통(1)에 노광될 수 있으며, 회절슬릿(21)을 통과한 빛은 제2광차단막(25)에 의하여 회절슬릿(21) 밖으로 벗어날 경우 차단된다. 그리고 회절슬릿(21)이 원통(1)과 동일한 곡률을 가지기 때문에 회절슬릿(21)과 원통(1) 사이의 간격은 동일하다. 그래서 광경로차가 동일하기 때문에 패턴의 정밀도를 높일 수 있다.As shown in FIG. 2, a laser beam is emitted from the light source unit to form a nano pattern on the cylinder 1. [ The laser beam emitted from the light source passes through the diffraction slit of the pattern means 20 and is exposed to the surface of the cylinder 1. [ 1, since the first light blocking film 23 is formed at the edge of the diffraction slit 21, only the light passing through the diffraction slit 21 is exposed to the cylinder 1 And the light having passed through the diffraction slit 21 is blocked when the second light shielding film 25 deviates out of the diffraction slit 21. Since the diffraction slit 21 has the same curvature as that of the cylinder 1, the gap between the diffraction slit 21 and the cylinder 1 is the same. Thus, since the light path difference is the same, the accuracy of the pattern can be increased.

또한, 원통(1)을 회전시키면 원통(1)의 모든 표면에 패턴을 형성할 수 있다.Further, when the cylinder 1 is rotated, a pattern can be formed on all the surfaces of the cylinder 1.

이때 패턴수단(20)의 회절슬릿(21)의 길이는 수십 마이크로미터(㎛)에서 수천 밀리미터(㎜)로 형성될 수 있다. 즉 도 3에 도시된 바와 같이 수천 밀리미터의 크기로 하면 원통(1)의 길이 전체를 커버할 수 있다.At this time, the length of the diffraction slit 21 of the pattern means 20 may be several tens of micrometers (μm) to several thousands of millimeters (mm). That is, as shown in FIG. 3, if the size is several millimeters, the entire length of the cylinder 1 can be covered.

또한, 패턴수단(20)의 회절슬릿(21)을 도 2에 도시된 바와 같이 원통(1)의 길이방향으로 배치하여 노광시킬 수 있을 뿐만 아니라 도 4에 도시된 바와 같이 원통(1)의 원주방향으로 배치하여 패턴을 형성할 수 있다.2, the diffraction slit 21 of the pattern means 20 can be arranged in the longitudinal direction of the cylinder 1 to expose the diffraction slit 21, as shown in Fig. 4, Direction to form a pattern.

그리고 도 5의 (a)와 같이 먼저 패턴수단(20)을 원통(1)의 길이방향으로 배치시켜 패턴을 형성한 후 도 5의 (b)와 같이 패턴수단(20)을 원통(1)의 원주방향으로 배치하여 노광시키면 교차된 패턴을 얻을 수 있다. 또한 패턴수단(20)을 사선으로 배치할 수 있으므로, 도 6에 도시된 바와 같이 다양한 형태의 패턴을 얻을 수 있다.5 (a), the pattern means 20 is first arranged in the longitudinal direction of the cylinder 1 to form a pattern, and then the pattern means 20 is placed on the cylinder 1 as shown in FIG. 5 (b) By arranging them in the circumferential direction and exposing them, an intersecting pattern can be obtained. In addition, since the pattern means 20 can be arranged diagonally, various patterns can be obtained as shown in Fig.

한편 도 7에 도시된 바와 같이 회절슬릿(21)의 길이가 작은 패턴수단(20)을 사용할 경우 원통(1)의 회전시키는 것과 동시에 패턴수단(20) 및 광원부를 원통(1)의 길이방향으로 이동시키면 원통(1)의 길이방향을 따라 패턴을 형성시킬 수 있다.7, when the pattern means 20 having a small length of the diffraction slit 21 is used, the pattern means 20 and the light source portion are rotated in the longitudinal direction of the cylinder 1 at the same time as the cylinder 1 is rotated It is possible to form a pattern along the longitudinal direction of the cylinder 1.

1 : 원통 10 : 광원부
20 : 패턴수단 21 : 회절슬릿
23 : 제1광차단막 25 : 제2광차단막
30 : 렌즈1: cylinder 10: light source
20: pattern means 21: diffraction slit
23: first light blocking film 25: second light blocking film
30: Lens

Claims (9)

곡면체에 레이저빔을 발사하는 광원부와,
상기 광원부에서 발사되는 레이저빔이 상기 곡면체에 일정한 패턴으로 조사되도록 상기 곡면체의 곡률과 동일한 곡률로 형성된 회절슬릿과, 상기 광원부에서 발사되어 상기 회절슬릿의 가장자리를 벗어난 레이저빔이 상기 곡면체에 노광되는 것을 차단할 수 있도록 상기 회절슬릿의 가장자리에서 연장된 제1광차단막을 구비한 패턴수단을 포함하는 것을 특징으로 하는 곡면체의 간섭패턴 제작장치.A light source unit for emitting a laser beam to the curved body,
A diffraction slit formed at the curvature equal to the curvature of the curved surface so that the laser beam emitted from the light source is irradiated in a predetermined pattern on the curved surface and a laser beam emitted from the light source and deviated from the edge of the diffractive slit is exposed to the curved surface And a patterning unit having a first light shielding film extending from an edge of the diffraction slit so as to be able to block the interference pattern. 제1항에 있어서, 상기 패턴수단은
상기 회절슬릿을 통과한 빛이 상기 회절슬릿의 가장자리를 벗어나는 것을 방지하도록 상기 회절슬릿의 내측 곡률의 가장자리에서 돌기된 제2광차단막을 더 구비하는 것을 특징으로 하는 곡면체의 간섭패턴 제작장치.2. The apparatus of claim 1,
Further comprising a second light blocking film protruding from the edge of the inner curvature of the diffraction slit so as to prevent light passing through the diffraction slit from deviating from the edge of the diffraction slit. 제2항에 있어서,
상기 곡면체와 동일한 곡률을 가지며 상기 광원부와 상기 회절슬릿 사이에 위치한 렌즈를 더 포함하는 것을 특징으로 하는 곡면체의 간섭패턴 제작장치.3. The method of claim 2,
Further comprising a lens having a curvature equal to that of the curved body and located between the light source and the diffraction slit. 광원부에서 레이저빔을 발사하는 레이저빔발사단계와,
곡면체와 곡률이 동일한 회절슬릿으로 만 상기 레이저빔이 통과하도록 상기 회절슬릿의 가장자리에 광을 차단하는 제1광차단막을 구비하는 패턴수단의 상기 회절슬릿에 상기 레이저빔을 통과시켜서 상기 곡면체에 상기 레이저빔을 노광시키는 노광단계를 포함하는 것을 특징으로 하는 곡면체의 간섭패턴 제작방법.A laser beam firing step of firing a laser beam in the light source part;
And a first light shielding film for shielding light at an edge of the diffraction slit so that the laser beam passes through only the diffraction slit having the same curvature as that of the curved body, the laser beam being passed through the diffraction slit of the patterning means, And a step of exposing the beam to light. 제4항에 있어서,
상기 노광단계에서 노광되는 상기 곡면체를 회전시키는 회전단계를 더 포함하는 것을 특징으로 하는 곡면체의 간섭패턴 제작방법.5. The method of claim 4,
Further comprising a rotating step of rotating the curved body exposed in the exposure step. 제4항에 있어서,
상기 패턴수단과 상기 광원부를 상기 곡면체의 축방향으로 이동시키는 이동단계를 더 포함하는 것을 특징으로 하는 곡면체의 간섭패턴 제작방법.5. The method of claim 4,
And moving the pattern unit and the light source unit in an axial direction of the curved body. 제5항에 있어서,
상기 회전단계에서 상기 곡면체가 회전될 때 상기 패턴수단과 상기 광원부를 상기 곡면체의 축방향으로 이동시키는 이동단계를 더 포함하는 것을 특징으로 하는 곡면체의 간섭패턴 제작방법.6. The method of claim 5,
And moving the pattern unit and the light source unit in the axial direction of the curved body when the curved body is rotated in the rotating step. 제4항 내지 제7항 중 어느 한 항에 있어서,
상기 노광단계는 상기 곡면체에 상기 슬릿의 패턴이 교차하여 형성되도록 상기 패턴수단을 여러 각도로 회전하여 반복하여 노광시키는 것을 특징으로 하는 곡면체의 간섭패턴 제작방법.8. The method according to any one of claims 4 to 7,
Wherein the patterning means is rotated at various angles so as to repeatedly expose the patterning means so that the pattern of the slits is formed to cross the curved body. 제8항에 있어서,
상기 노광단계는 상기 회절슬릿을 통과한 빛이 상기 회절슬릿의 가장자리를 벗어나는 것을 방지하도록 상기 회절슬릿의 내측 곡률의 가장자리에서 돌기된 제2광차단막을 더 구비하는 상기 패턴수단에 상기 레이저빔을 노광시키는 것을 특징으로 하는 곡면체의 간섭패턴 제작방법.9. The method of claim 8,
Wherein the step of exposing comprises the step of exposing the laser beam to the patterning means further comprising a second light shielding film protruding from the edge of the inner curvature of the diffraction slit so as to prevent light passing through the diffraction slit from deviating from the edge of the diffraction slit Wherein the interference patterns are formed in a curved surface.
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