KR20180072993A - 프리즘 효과를 나타내는 발색 기판 및 이를 위한 기판의 발색방법 - Google Patents
프리즘 효과를 나타내는 발색 기판 및 이를 위한 기판의 발색방법 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 80
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- 239000010936 titanium Substances 0.000 claims description 39
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 24
- 229910052719 titanium Inorganic materials 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
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- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
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- 239000010410 layer Substances 0.000 description 45
- 239000000463 material Substances 0.000 description 21
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- ORFSSYGWXNGVFB-UHFFFAOYSA-N sodium 4-amino-6-[[4-[4-[(8-amino-1-hydroxy-5,7-disulfonaphthalen-2-yl)diazenyl]-3-methoxyphenyl]-2-methoxyphenyl]diazenyl]-5-hydroxynaphthalene-1,3-disulfonic acid Chemical compound COC1=C(C=CC(=C1)C2=CC(=C(C=C2)N=NC3=C(C4=C(C=C3)C(=CC(=C4N)S(=O)(=O)O)S(=O)(=O)O)O)OC)N=NC5=C(C6=C(C=C5)C(=CC(=C6N)S(=O)(=O)O)S(=O)(=O)O)O.[Na+] ORFSSYGWXNGVFB-UHFFFAOYSA-N 0.000 description 4
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Abstract
Description
도 2는 시야각에 따라 2 이상의 색상이 발색되는 발색 기판을 촬영한 이미지이다.
도 3은 표면에 하나의 색상이 발색되는 발색 기판을 촬영한 이미지이다.
금속(M1) 기재 종류 | 평균 두께 | |
실시예 1 | 스테인레스 스틸(STS) | 200±10㎚ |
실시예 2 | 300±10㎚ | |
실시예 3 | 350±10㎚ | |
실시예 4 | 400±10㎚ | |
실시예 5 | 500±10㎚ | |
실시예 6 | 티타늄(Ti) | 300±10㎚ |
실시예 7 | 350±10㎚ | |
실시예 8 | 400±10㎚ | |
실시예 9 | 500±10㎚ |
금속(M1) 기재 종류 | 평균 두께 | |
비교예 1 | 스테인레스 스틸(STS) | 120±10㎚ |
비교예 2 | 티타늄(Ti) | 120±10㎚ |
비교예 3 | 200±10㎚ |
금속(M1) 기재 종류 | 파장변환층 평균 두께 |
수직 관측 | 사선 관측 | |
실시예 1 | 스테인레스 스틸(STS) | 200±10㎚ | 분홍색 | 황색 |
실시예 2 | 300±10㎚ | 황색 | 녹색 | |
실시예 3 | 350±10㎚ | 자색 | 황색 | |
실시예 4 | 400±10㎚ | 녹색 | 분홍색 | |
실시예 5 | 500±10㎚ | 분홍색 | 녹색 | |
실시예 6 | 티타늄(Ti) | 300±10㎚ | 녹색 | 청색/자색 |
실시예 7 | 350±10㎚ | 녹색 | 청녹색 | |
실시예 8 | 400±10㎚ | 분홍색 | 녹색 | |
실시예 9 | 500±10㎚ | 녹색 | 분홍색 | |
비교예 1 | 스테인레스 스틸(STS) | 120±10㎚ | 미발색 | 미발색 |
비교예 2 | 티타늄(Ti) | 120±10㎚ | 청색 | 청색 |
비교예 3 | 200±10㎚ | 황색 | 황색 |
3점 | L* | a* | b* | ΔL* | Δa* | Δb* | ΔE* | |
실시예 2 | A | 78.54 | 5.54 | 17.88 | - | - | - | - |
B | 78.44 | 5.85 | 17.54 | 0.1 | 0.31 | 0.34 | 0.47 | |
C | 78.55 | 5.57 | 17.85 | 0.01 | 0.03 | 0.03 | 0.04 | |
평균 | 78.51 | 5.65 | 17.76 | 0.06 | 0.17 | 0.19 | 0.26 | |
실시예 5 | A | 74.9 | 16.71 | -10.93 | - | - | - | - |
B | 75 | 16.23 | -10.84 | 0.1 | 0.48 | 0.09 | 0.50 | |
C | 74.95 | 16.67 | -11.01 | 0.05 | 0.04 | 0.08 | 0.10 | |
평균 | 74.95 | 16.54 | -10.93 | 0.07 | 0.26 | 0.09 | 0.30 |
Claims (9)
- 금속(M1) 기재; 및 상기 금속(M1) 기재 상에 마련되고 금속(M2)을 포함하는 파장변환층을 포함하고,
상기 금속(M1) 기재는 스테인레스 스틸 및 티타늄으로 이루어진 군으로부터 선택되는 1종 이상을 포함하며,
상기 파장변환층은 규소(Si), 티타늄(Ti) 또는 알루미늄(Al)을 포함하는 금속(M2)을 포함하고,
상기 파장변환층의 평균 두께는 1㎛ 미만이며,
시야각에 따라 표면에 2 이상의 색상이 발색하는 것을 특징으로 하는 발색 기판.
- 제1항에 있어서,
시야각에 따라 표면에서 발색되는 2 이상의 색상은,
관측조건 1 및 2 하에서 관측된 CIE 평균 색차계가 조건 1 내지 4 중 2 이상의 조건을 만족하되,
관측조건 1 및 2 하에서 관측된 각 CIE 평균 색차계는 서로 다른 조건을 만족하는 것을 특징으로 하는 발색 기판:
[관측조건 1] 발색 기판의 표면을 기준으로 수직(90±5°)인 위치에서 색상(hue) 관찰
[관측조건 2] 발색 기판의 표면을 기준으로 사선(20±5°)인 위치에서 색상(hue) 관찰
조건 1) -100≤a*≤0 및 -5≤b*≤85
조건 2) 5≤a*≤85 및 -75≤b*≤-5
조건 3) -20≤a*≤20 및 0≤b*≤100
조건 4) -100≤a*≤0 및 -5≤b*≤85.
- 제2항에 있어서,
파장변환층의 평균 두께가 200±50㎚인 경우,
관측조건 1에서 관측된 CIE 평균 색차계는 조건 2를 만족하고,
관측조건 2에서 관측된 CIE 평균 색차계는 조건 3을 만족하는 발색 기판.
- 제2항에 있어서,
파장변환층의 평균 두께가 300±40㎚인 경우,
관측조건 1에서 관측된 CIE 평균 색차계는 조건 1 또는 3을 만족하고,
관측조건 2에서 관측된 CIE 평균 색차계는 조건 1, 2 또는 4를 만족하되,
관측조건 1 및 2 하에서 관측된 각 CIE 평균 색차계는 서로 다른 조건을 만족하는 발색 기판.
- 제2항에 있어서,
파장변환층의 평균 두께가 350㎚ 내지 550㎚인 경우,
관측조건 1에서 관측된 CIE 평균 색차계는 조건 1 또는 2를 만족하고,
관측조건 2에서 관측된 CIE 평균 색차계는 조건 1 또는 2를 만족하되,
관측조건 1 및 2 하에서 관측된 각 CIE 평균 색차계는 서로 다른 조건을 만족하는 발색 기판.
- 제1항에 있어서,
파장변환층은 산화규소(SiO2), 질화규소(SiN), 산화티타늄(TiO2) 또는 산화알루미늄(Al2O3)을 포함하는 발색 기판.
- 금속(M1) 기재 상에 금속(M2)을 증착하여 파장변환층을 형성하는 단계를 포함하고,
상기 금속(M1) 기재는 스테인레스 스틸 및 티타늄으로 이루어진 군으로부터 선택되는 1종 이상을 포함하며,
상기 파장변환층은 규소(Si), 티타늄(Ti) 또는 알루미늄(Al)을 포함하는 금속(M2)을 포함하고,
상기 파장변환층의 평균 두께는 1㎛ 미만이며,
시야각에 따라 표면에 2 이상의 색상이 발색하는 기판의 발색방법.
- 제7항에 있어서,
증착은 화학적 증기 증착(CVD), 물리적 증기 증착(PVD) 또는 원자층 증착(ALD)에 의해 수행되는 기판의 발색방법.
- 제7항에 있어서,
기판의 발색방법은,
파장변환층을 형성하는 단계 이전에, 금속 기재 표면을 전처리하는 단계; 및
파장변환층을 형성하는 단계 이후에 형성된 파장변환층 상에 클리어층을 형성하는 단계 중 어느 하나 이상의 단계를 더 포함하는 기판의 발색방법.
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