KR20180071461A - Liquid crystal display device and manufaturing method for the same - Google Patents

Abstract

According to an embodiment of the present invention, provided are a liquid crystal display device and a manufacturing method thereof which can reduce the number of masks to enhance the productivity and to reduce the manufacturing costs. The liquid crystal display device comprises: a first substrate including an element region having a thin film transistor arranged therein and an opening region having a first color filter layer arranged in an upper part of the opening region; a second substrate facing the first substrate, and having an embossed reflection plate formed thereon; and a liquid crystal layer arranged between the first and second substrates.

Description

TECHNICAL FIELD [0001] The present invention relates to a liquid crystal display (LCD)

The present embodiments relate to a liquid crystal display and a method of manufacturing the same.

Recently, liquid crystal display devices have been developed in a large and thin form. However, it is expensive to manufacture a liquid crystal display device with a large and thin thickness. Therefore, it is not widely used.

The liquid crystal display device includes a first substrate on which a thin film transistor is formed, a second substrate on which a color filter is formed, a first substrate and a second substrate which are coupled to each other, a liquid crystal is disposed between the first substrate and the second substrate, The image can be displayed by selectively controlling the light passing through the color filter by the voltage applied to the liquid crystal.

In addition, the liquid crystal display device increases the brightness and increases the visibility of the displayed image. In order to increase the brightness, a method of reducing the area covering the screen of the display device so as to increase the aperture ratio has been devised.

It is an object of the present embodiments to provide a liquid crystal display device capable of reducing the number of masks and improving productivity, and a method of manufacturing the same.

Another object of the present invention is to provide a liquid crystal display having a large screen and a method of manufacturing the same.

In one aspect, the embodiments include a first substrate including an element region and an opening region, in which the thin film transistors are stacked and arranged in the element region, and on which a first color filter layer is disposed, And a liquid crystal layer disposed between the first substrate and the second substrate, the liquid crystal layer being opposed to the substrate, the second substrate having an embossed reflection plate formed thereon.

According to another aspect of the present invention, there is provided a method of manufacturing a thin film transistor, comprising the steps of: disposing a thin film transistor in an element region on a first substrate and a color filter layer in an opening region; And a step of bonding the first substrate and the second substrate, and disposing a liquid crystal layer between the first substrate and the second substrate. The present invention also provides a method of manufacturing a liquid crystal display device.

According to these embodiments, it is possible to provide a liquid crystal display device and a method of manufacturing the same that can reduce the number of masks and improve productivity and reduce manufacturing cost.

Further, according to the embodiments, it is possible to provide a liquid crystal display device with a large screen and a manufacturing method thereof.

FIG. 1 is a structural view showing one embodiment of a liquid crystal display device according to the present embodiment.
2 is a cross-sectional view showing an embodiment of a liquid crystal display device according to the present embodiment.
Fig. 3A is a cross-sectional view showing a first embodiment of a cross-section of a red pixel portion of the liquid crystal display shown in Fig. 1. Fig.
FIG. 3B is a cross-sectional view showing a second embodiment of a cross-section of a red pixel portion of the liquid crystal display shown in FIG.
FIG. 3C is a cross-sectional view showing a third embodiment of a cross-section of a red pixel portion of the liquid crystal display shown in FIG.
4A to 4F are cross-sectional views illustrating a manufacturing process of the first substrate.
5A and 5B are cross-sectional views illustrating a manufacturing process of a second substrate.
6 is a cross-sectional view showing another embodiment of a liquid crystal display device according to the present invention.
7A is a plan view showing an embodiment of a pixel electrode.
7B is a plan view showing one embodiment of a pixel electrode and a common electrode.
8 is a flowchart showing one embodiment of a method of manufacturing a liquid crystal display device according to the present embodiment.

Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. In the drawings, like reference numerals are used to denote like elements throughout the drawings, even if they are shown on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

In describing the components of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the components from other components, and the terms do not limit the nature, order, order, or number of the components. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; intervening "or that each component may be" connected, "" coupled, "or " connected" through other components.

FIG. 1 is a structural view showing one embodiment of a liquid crystal display device according to the present embodiment, and FIG. 2 is a sectional view showing an embodiment of a liquid crystal display device according to this embodiment.

1, a liquid crystal display 100 includes a plurality of gate lines G1, G2, ..., Gn-1, Gn and a plurality of data lines D1, D2, ..., Dm- The display panel 110 may include a display panel. The gate driver 120 and the plurality of data lines D1, D2, ..., Dm-1, Dm for applying gate signals to the plurality of gate lines G1, G2, ..., Gn- And a data driver 130 for applying a signal. Here, the gate driver 120 is shown as being a component separated from the display panel 110, but it is not limited thereto and may be disposed in a non-emission area on the side of the display panel 110. The display panel 110 may include a light emitting region in which pixels are formed and a non-light emitting region in which pixels are not disposed.

The display panel 110 is provided with a plurality of pixels (for example, a plurality of pixels) in a region where a plurality of gate lines G1, G2, ..., Gn-1, Gn cross a plurality of data lines D1, D2, ..., Dm- 101 may be formed, and each pixel 101 may include a thin film transistor for selectively transmitting a data signal. Each pixel 101 may be a red pixel R, a green pixel G, and a blue pixel G, respectively. The red pixel R, the green pixel G, and the blue pixel G may transmit red, green, and blue light corresponding to the data signal.

2, the display panel 110 includes a first substrate 111, a second substrate 112 disposed on the first substrate 111, a first substrate 111, And a liquid crystal layer 113 disposed between the first substrate 112 and the second substrate 112. The first substrate 111 includes a plurality of thin film transistors (not shown), a plurality of gate lines G1 to Gn and a plurality of data lines D1 to Dm- Dm may be formed. In addition, a color filter (not shown) may be formed on the first substrate 111. In addition, the thin film transistor of the first substrate 111 selectively applies a data signal to the liquid crystal layer to adjust the liquid crystal alignment to adjust the light passing through the color filter. A reflective layer (not shown) may be disposed on the second substrate 112. The reflective layer (not shown) may be curved. The reflective layer having a curvature can totally reflect light. A spacer may be included in the liquid crystal layer 113 so that the liquid crystal layer 113 maintains a predetermined gap between the first substrate 111 and the second substrate 112.

FIG. 3A is a cross-sectional view showing a first embodiment of a cross section of a red pixel portion of the liquid crystal display device shown in FIG. 1, and FIG. 3B is a cross-sectional view of a cross section of a red pixel portion of the liquid crystal display device shown in FIG. 2 is a cross-sectional view showing an embodiment, and Fig. 3C is a cross-sectional view showing a third embodiment of a cross section of a red pixel portion of the liquid crystal display device shown in Fig.

3A, the liquid crystal display 300 includes an element region 302 and an opening region 301, a thin film transistor TR is stacked and disposed in the element region 302, A first substrate 310 on which a first color filter layer 316a is disposed on an upper portion of an opening region 301 and a second substrate 310 on which a reflective plate 323 having a curved shape is formed, A first substrate 320 and a liquid crystal layer 330 disposed between the first substrate 310 and the second substrate 320.

In the first substrate 310, a thin film transistor TR may be disposed in the device region 302. A passivation layer 315 may be formed on the first substrate 310 and the top of the thin film transistor TR. However, the present invention is not limited thereto. The first color filter layer 316a may be disposed in the opening region 301. [ 3 is a cross-sectional view of the red pixel portion of the first substrate 310, the first color filter layer 316a formed in the opening region 301 may include a red color filter. However, the first color filter layer 316a formed in the opening region 301 may be a green color filter and the first color filter layer 316a formed in the opening region 301 if it is a blue pixel portion, Filter. Also, the first substrate 310 may be a transparent substrate.

In addition, in the device region 302, the first color filter layer 316a may be disposed on the thin film transistor TR. The first color filter layer 316a disposed on the thin film transistor TR may be a red color filter regardless of the color of the pixel. However, the present invention is not limited thereto.

In the device region 302, a second color filter layer 316b may be formed on the first color filter layer 316a. The second color filter layer 316b may be formed in a region overlapping the thin film transistor TR on the top of the thin film transistor TR. Here, the overlap may mean that when two layers are vertically projected, one of the two transparent surfaces is included in the other. In addition, the area where the second color filter layer 316b is formed may have a larger area than the area where the thin film transistor TR is formed on the first substrate 310. [ The overlap may also include some overlap. Since the thin film transistor TR does not emit light, the element region 302 in which the thin film transistor TR is disposed may be a non-opening region. A black matrix BM may be formed so as to overlap with a portion where the thin film transistor TR is disposed in order to prevent color mixing in a portion where the red, green, have. The black matrix BM is formed on the outer periphery of the pixel to prevent the light emitted from the pixels from mixing with the light emitted from the neighboring pixels, thereby preventing the light emitted from the opening region 301 of each pixel from being mixed . When the light is not mixed, the color displayed by each pixel can be sharpened.

When the first color filter layer 316a and the second color filter layer 316b having different colors are superimposed and stacked in the device region 302 in which the thin film transistor TR is formed and then the first color filter layer 316a and the second color filter layer 316b are stacked, The amount of light transmitted through the second color filter layer 316b may be reduced and the color displayed at the overlapping portion of the first color filter layer 316a and the second color filter layer 316b may be dark. Therefore, the first color filter layer 316a and the second color filter layer 316b which are stacked can serve as a black matrix. In addition, the first color filter layer 316a may be a red color filter and the second color filter layer 316b may be a blue color filter. In the case where the red color filter and the blue color filter are overlapped, the amount of light transmitted through the stacked color filter is reduced more than when the red color filter and the green color filter or the green color filter and the blue color filter are overlapped, The color of the overlapping portion of the filter layer and the second color filter layer may become darker. Further, when the second color filter layer 316b is formed, a blue color filter may be disposed in the opening area corresponding to the blue pixel in the first color filter layer 316a. In addition, the thickness of the second color filter layer 316b may be the same as that of the first color filter layer 316a, but is not limited thereto and may be formed thinner than the first color filter layer 316a.

An insulating film 317 may be deposited on the first color filter layer 316a and the second color filter layer 316b. A contact hole h may be formed in the insulating film 317 so that any one of the drain electrode 314b of the thin film transistor TR may be exposed. Therefore, the drain electrode 314b of the thin film transistor TR can be exposed. However, the present invention is not limited thereto. In addition, in one embodiment, the pixel electrode 318 may be formed on the insulating layer 317. The pixel electrode 318 may be connected to the drain electrode 314b of the thin film transistor TR through the contact hole h. Further, in one embodiment, a pixel electrode 318 and a common electrode (not shown) may be disposed on the insulating film 317.

When the pixel electrode 318 and the common electrode are disposed on the insulating film 317, the pixel electrode 318 is disposed at a predetermined distance from the top of the insulating film 317 and the common electrode is disposed between the pixel electrodes 318 . Accordingly, the pixel electrode 318 and the common electrode can apply an electric field to the liquid crystal in a transversal electric field system. If the pixel electrode 318 and / or the common electrode are formed on the color filter, the device for depositing the pixel electrode 318 and / or the common electrode may be contaminated by the color filter. However, when the pixel electrode 318 and / or the common electrode is formed after the insulating film 317 is formed on the color filter, the device for depositing the pixel electrode and / or the common electrode by the color filter is prevented from being contaminated . The upper portion of the insulating film 317 may be flat and the pixel electrode 318 and the common electrode may be formed flat.

The embossment 321 and the spacer 322 may be formed on the second substrate 320 using a black material. The embossment 321 and the spacer 322 may be formed of the same material. The embossment 321 and the spacer 322 may include a photosensitive material that solidifies upon receiving light. However, the present invention is not limited thereto. The second substrate 320 may be a transparent substrate or an opaque substrate.

The reflection plate 323 may be formed at a portion where the embossment 321 is formed. The reflector 323 may be formed on the outer periphery of the embossment to have a curvature corresponding to the embossment 321. When the reflection plate 323 is bent, the light reflected by the reflection plate 323 can be totally reflected. In addition, the reflection plate 323 may include a conductive material. If the reflection plate 323 includes a conductive material, the reflection plate 323 can be used as a common electrode. Further, the reflection plate 323 may be formed on the outer periphery of the spacer 322.

In one embodiment, when the pixel electrode 318 is formed on the insulating layer 317, a conductive layer 324 may be formed on the reflective plate 323 as shown in FIG. 3B. The conductive layer 324 may be a common electrode. The conductive layer 324 may be formed on the reflection plate 323 when the reflection plate 323 is a non-conductive material. When the conductive layer 324 is formed on the reflection plate 323, the conductive layer 324 may be formed as a transparent electrode. The conductive layer 324 formed on the reflection plate 323 may be formed using an AG (Dotting) process.

3C, the reflection plate 323 may be formed only on the embossment 321 and not on the spacer 322. [ If the pixel electrode 318 and the common electrode are disposed on the insulating film 317 on the first substrate 310, it is not necessary to connect the power source to the second substrate 320. [

The liquid crystal layer 330 may be disposed between the first substrate 310 and the second substrate 320. The spacing between the first substrate 310 and the second substrate 320 can be maintained by the spacer 322 between the first substrate 310 and the second substrate 320. The spacer 322 may be disposed on top of the element region 302. In addition, the spacer 322 may be disposed in the region where the first color filter layer 316a and the second color filter layer 316b are overlapped in the element region 302. [ Accordingly, the spacers 322 are disposed in the regions overlapping the first color filter layer 316a and the second color filter layer 316b, and therefore, they can be disposed in the non-opening regions, so that the aperture ratio reduction by the spacers 322 can be prevented . When the conductive layer 324 is disposed on the reflection plate 323, the conductive layer 324 may be deposited on the outer surface of the spacer 322. A wiring (not shown) for transmitting a common power source formed on the first substrate 310 through the conductive layer 324 formed on the outer surface of the spacer 322 and a wiring The formed conductive layer 324 is conductive and can receive a common power supply. The conductive layer 324 formed on the outer surface of the spacer 322 may be formed by a silver (AG) dotting process. However, the present invention is not limited thereto. If the spacer 322 is formed with the reflection plate 323 containing a conductive material, the wiring for transmitting the common power source arranged on the first substrate 310 can be connected to the spacer, so that the reflection plate 323 serves as a common electrode Can be performed.

In general, a wiring for transmitting a common power to the first substrate 310 is formed and a common power to be transmitted to the wiring is formed on the reflection plate 323 on the second substrate 320 or the conductive layer 324 , The wiring and the conductive layer 324 on the second substrate 320 may be electrically connected to each other outside the liquid crystal display device. In this case, if there is a small number of parts where the wiring and the conductive layer 324 on the second substrate 320 are connected to each other and damage is caused to the connection between the wiring and the conductive layer 324 on the second substrate 320, The layer 324 may not be transmitted. However, if the common electrode is made conductive through the spacer 322 disposed inside the liquid crystal display device, efficiency becomes high, and even if a part of the connection is disconnected, a common power is supplied to the conductive layer 324 And the common power supply can be supplied to the conductive layer 324 more stably. The spacer 322 may be formed in the spacer 322 so that the reflector 323 or the conductive layer 324 including the conductive material is formed in the spacer 322 in order to conduct the common electrode or the spacer 322 is made conductive through the silvering process can do.

The thin film transistor TR and the color filter layer are formed on the first substrate 310 and the reflector 323 is formed on the second substrate 320 so that the number of masks can be reduced to simplify the process and reduce the manufacturing cost .

4A to 4F are cross-sectional views illustrating a manufacturing process of the first substrate. Here, the first substrate shows a cross section of the red pixel portion.

Referring to FIG. 4A, a gate metal may be deposited on the first substrate 310 and patterned to form the gate electrode 311. Here, the gate metal is directly deposited on the first substrate 310, but the present invention is not limited thereto. A gate metal may be deposited after forming a buffer layer on the first substrate 310. One mask may be required when depositing and patterning the gate metal.

Referring to FIG. 4B, a gate insulating layer 312 may be deposited on the gate electrode 311, and an active layer 313 may be formed thereon. A source / drain metal may be deposited on the active layer 313 and patterned to form the source electrode 314a and the drain electrode 314b. The thin film transistor TR may be formed on the first substrate 111 by the gate electrode 311, the active layer 313, the source electrode 314a and the drain electrode 314b. Here, although the thin film transistor is shown as a bottom gate type, it is not limited thereto. One mask may be required to form the gate insulating film 312, the active layer 313, the source electrode 314a and the drain electrode 314b on the gate electrode 311. [

Referring to FIG. 4C, a passivation layer 315 may be formed on the first substrate 310 on which the thin film transistor TR is formed. The passivation layer 315 can protect the thin film transistor TR. A first color filter layer 316a may be formed on the passivation layer 315. [ The first color filter layer 316a may be formed in the device region and the opening region. Since the drawing shows the cross section of the red pixel portion, the first color filter layer 316a including the red color filter may be disposed in the aperture region corresponding to the red pixel and the aperture region. However, the first color filter layer 316a may not be formed in the opening area corresponding to the green pixel or the blue pixel in the case of the green pixel other than the red pixel or the blue pixel part. In addition, the first color filter layer 316a may be disposed in an area including the upper portion of the thin film transistor TR in the element region. The first color filter layer 316a may be a red color filter. A contact hole may be formed to expose the drain electrode 314b to the first color filter layer 316a and the passivation layer 315 disposed in the device region. However, the present invention is not limited thereto, and a contact hole h1 may be formed to expose the source electrode 314a. The first color filter layer 316a can be formed using one mask. Further, a first color filter layer 316a including a green color filter may be disposed in an opening region corresponding to a green pixel in an opening region on the first substrate 310 using another mask.

Therefore, in the first color filter layer 316a on the first substrate 310, a green color filter may be disposed in the opening area corresponding to the green pixel in a state where the red color filter is formed in the opening area corresponding to the red pixel. At this time, the first color filter layer may not yet be formed in the opening region corresponding to the blue pixel.

Referring to FIG. 4D, a second color filter layer 316b may be disposed on an upper portion of the region where the first color filter layer 316a and the thin film transistor are overlapped. The second color filter layer 316b may include a blue color filter. When the second color filter layer 316b is disposed on the first color filter layer 316a, a first color filter layer including a blue color filter may be disposed in the opening area corresponding to the blue pixel on the first substrate 310 have. Thereby, the first color filter layer 316a including the red color filter is disposed in the opening area corresponding to the red pixel, and the first color filter layer 316a including the green color filter is disposed in the opening area corresponding to the green pixel A first color filter layer 316a including a blue color filter may be disposed in the opening region corresponding to the blue pixel. Here, since the red color filter, the green color filter, and the blue color filter formed in the opening region are disposed in the same layer, they are referred to as a first color filter layer. The color filter layer overlapped with the first color filter layer in the element region is called a second color filter layer because it is disposed in a layer different from the first color filter layer. In addition, the first color filter layer 316a formed on the element region is a red color filter, the second color filter layer 316b formed on the element region may be a blue color filter, and a red color filter and a blue color filter The color of the color filter layer becomes dark and can act as a black matrix. At this time, the first color filter layer 316a and the second color filter layer 316b disposed in the device region 302 are not limited to the red color filter and the blue color filter, respectively. However, when two colors are stacked and mixed When the red color filter and the blue color filter are laminated, the light transmittance may be lowest. The first color filter layer 316a may be formed on the second color filter layer 316b and the contact hole h2 may be formed on the second color filter layer 316b to be connected to the contact hole h1 formed on the passivation layer 315. [ In addition, one mask may be required to form the blue color filter formed in the second color filter layer 316b and the opening area of the blue pixel.

Referring to FIG. 4E, after the first color filter layer 316a and the second color filter layer 316b are stacked on the first substrate 111, an insulating layer 317 may be deposited. The insulating layer 317 may be patterned to form a contact hole h penetrating the insulating layer 317, the second color filter layer 316b, the first color filter layer 316a and the passivation layer 315. The upper portion of the first substrate 310 may be planarized by the insulating film 317. [ One mask may be required when depositing the insulating film 317 and forming the contact hole.

Referring to FIG. 4F, a pixel electrode 318 may be formed on the insulating layer 317. The pixel electrode 318 may be connected to the drain electrode 314b by a contact hole h. In addition, since the insulating film 317 is disposed under the pixel electrode 318, the mechanism for depositing the pixel electrode 318 can be prevented from being contaminated by the color filter. One mask may be needed to form the pixel electrode 318.

In one embodiment, a common electrode may be formed on the insulating film 317 when the pixel electrode 318 is formed. The common electrode can be formed by using the same mask when forming the pixel electrode 318. [ When the pixel electrode 318 and the common electrode are formed together, the pixel electrode 318 may be disposed at a constant interval and the common electrode may be disposed between the pixel electrode 318. In this case, the upper portion is planarized by the insulating film 317, so that the pixel electrode and / or the common electrode are formed on the surface without bending to prevent disconnection or ruggedness due to curvature when the pixel electrode and / or the common electrode are formed have.

Accordingly, seven masks may be required to deposit the thin film transistor TR and the color filter layer on the first substrate 310. [

5A and 5B are cross-sectional views illustrating a manufacturing process of a second substrate.

Referring to FIG. 5A, a photosensitive material hardened by light may be deposited on the second substrate 320, and then the embossment 321 and the spacer 322 may be formed. The embossment 321 and the spacer 322 may be formed by using half-tone photosensitive and / or full-tone photosensitive to adjust the light-transmitting slit. Accordingly, the embossment 321 and the spacer 322 can be formed using one mask.

Referring to FIG. 5B, a reflection material may be deposited on the embossment 321 to form the reflection plate 323. When the reflection material is deposited on the upper portion of the embossment 321, a reflection material may be deposited on the outer periphery of the spacer 322 to form the reflection plate 323. Also, the reflector 323 may have a curvature corresponding to the embossment 321, so that light can be totally reflected by the reflector 323. Therefore, the reflection plate 323 can be formed using one mask. When the reflection plate 323 is formed only on the embossment 321 and the reflection plate 323 is not formed on the spacer 322 or the reflection plate formed on the embossment 321 and the spacer 322 is non- A conductive layer may be formed on the reflection plate 323 and / or the spacer 322 by adding a dotting process so that a common electrode is formed on the second substrate. The spacer 322 is electrically connected to the wiring for transmitting a common power source formed at the lower portion of the first substrate 310 so that the common power is transmitted through the spacer 322 to the reflection plate 323 used as the common electrode .

When the pixel electrode and the common electrode are formed on the insulating film 317 on the first substrate 310 shown in FIG. 4F, when the first substrate is coupled with the second substrate 320, The second substrate on which the conductive layer is not disposed can be coupled to the first substrate 322. And the liquid crystal layer 330 is disposed between the first substrate 310 and the second substrate 320 to manufacture the liquid crystal display device 300.

The first substrate 310 having the pixel electrode 318 formed on the insulating film 317 shown in FIG. 4F is connected to the second substrate 320 shown in FIG. 5C, and the first substrate 310 The liquid crystal display device 300 can be manufactured by disposing the liquid crystal layer 330 between the first substrate 310 and the second substrate 320.

Thus, two masks may be required to fabricate the second substrate 320. This requires seven masks necessary for manufacturing the first substrate and two masks necessary for manufacturing the upper substrate, so that a total of nine masks are required to manufacture the total reflection liquid crystal display device, thereby reducing the manufacturing cost, and the number of masks And can be easily manufactured in a small size.

6 is a cross-sectional view showing another embodiment of a liquid crystal display device according to the present invention.

Referring to FIG. 6, a thin film transistor TR may be formed on a first substrate 410, and a passivation layer 415 may be formed on a thin film transistor TR formed. The region where the thin film transistor TR is disposed on the first substrate 410 is referred to as an element region and the region where the thin film transistor is not disposed can be referred to as an opening region. In addition, an insulating film 416 may be deposited on the passivation layer 415 and disposed thereon. At this time, the upper portion of the insulating film 416 may be embossed. A reflection metal 417 may be applied to the upper portion of the embossment 321. In addition, the pixel electrode 418 may be disposed on the reflective metal. In addition, the common electrode may be disposed on the insulating film 416 like the pixel electrode 418. In this case, since the pixel electrode 418 and / or the common electrode is formed on the insulating film 416 on which the emboss is formed, the pixel electrode 418 and / or the common electrode may be bent. In particular, when the pixel electrode 418 is formed at regular intervals and the common electrode is disposed between the pixel electrodes 418, the pixel electrode and the common electrode may be arranged in the form of thin lines having a constant length, The common electrode may have a problem that disconnection occurs.

A color filter layer 421 and a black matrix BM are formed on the second substrate 420 and an insulating film 423 is formed on the color filter layer 421. A spacer 424 is formed over the black matrix BM to cover the black matrix BM. Can be formed.

The liquid crystal display device 400 is manufactured by combining the first substrate 410 and the second substrate 420 and arranging the liquid crystal layer 430 between the first substrate 410 and the second substrate 420 . At this time, the spacer 424 may couple the first substrate 410 and the second substrate 420 to contact the element region on the first substrate 423. The first substrate 410 and the second substrate 420 may be spaced apart by a spacer 424.

The liquid crystal display device 400 having such a total internal reflection structure uses six masks when forming a transistor on the first substrate 410 and a black matrix, a color filter and a spacer on the second substrate 420 It is necessary to use five masks in total so that a total of eleven masks are required, so that the number of masks can be further increased as compared with the liquid crystal display shown in Fig.

FIG. 7A is a plan view showing one embodiment of a pixel electrode, and FIG. 7B is a plan view showing an embodiment of a pixel electrode and a common electrode.

Referring to FIG. 7A, since the common electrode is formed on the reflective plate of the second substrate 310, the pixel electrode 318a may be formed on the insulating layer 317 on the first substrate 310. FIG. The pixel electrode 318a may be formed in a manner having a predetermined area on the insulating film. Since the insulating film 317 has no bending, the pixel electrode 318a can be formed without bending. Here, the pixel electrode 318a is shown as being in the form of a rectangle, but this is not limitative.

Referring to FIG. 7B, an electrode 318b may be formed on an insulating film. The electrode may include a common electrode 3182 disposed between the pixel electrode 3181 and the pixel electrode 3181 arranged at regular intervals. The pixel electrode 3181 and the common electrode 3182 may be arranged in a transverse electric field pattern. At this time, the pixel electrode 3181 and the common electrode 3182 may be arranged as a thin line having a predetermined length. If the insulating film on which the electrode 318b is disposed is bent, the pixel electrode 3181 and the common electrode 3182 may be curved, and the pixel electrode 3182 and / or the common electrode 3182 may be bent, Can be disconnected. However, since there is no curvature in the insulating film, the risk of disconnection of the pixel electrode and / or the common electrode can be reduced. It is also possible to prevent the electric field between the pixel electrode 3182 and / or the common electrode 3182 from being distorted by bending.

8 is a flowchart showing one embodiment of a method of manufacturing a liquid crystal display device according to the present embodiment.

Referring to FIG. 8, a method of fabricating a liquid crystal display device includes arranging a thin film transistor in an element region on a first substrate and a color filter layer in an opening region, wherein the color filter layer is stacked on the thin film transistor (S800) , A reflective plate having a curved shape is formed on the second substrate (S810), and the first substrate and the second substrate are coupled to each other, and the liquid crystal layer is disposed between the first substrate and the second substrate (S820).

Accordingly, a thin film transistor and a color filter may be formed on the first substrate, and a spacer may be formed on the second substrate. In addition, when forming the first substrate and the second substrate, the number of masks can be reduced, and the process can be simplified.

When the thin film transistor and the color filter layer are disposed (S800), a thin film transistor is formed on the first substrate, a first color filter layer covering the thin film transistor and the first substrate is formed, and a part of the first color filter layer is formed A first contact hole is formed to expose one of the source electrode and the drain electrode of the thin film transistor to expose the first color filter layer and a color filter having a color different from that of the first color filter layer is formed on the first color filter layer, A second contact hole connected to the first contact hole formed in the second color filter layer is formed and an insulating film is deposited on the first color filter layer and the second color filter layer, And a pixel electrode is formed on the insulating film so that the pixel electrode is electrically connected to one of the source electrode and the drain electrode through the first contact hole and the second contact hole, It can be connected to pole.

Further, the emboss and the spacer may be formed on the second substrate, and a reflector may be formed on the emboss. The reflector can be formed by depositing a reflective metal on the emboss. The reflector may or may not include a conductive material. If the reflector does not include a conductive material, a conductive layer may be formed on the reflector. Further, when the emboss and the spacer are formed, a conductive layer can be laminated on the outer surface of the emboss and the spacer.

In addition, in the step of forming the pixel electrode on the insulating film, the pixel electrode may be formed at a predetermined interval on the predetermined insulating film, and the common electrode corresponding to the pixel electrode may be disposed between the pixel electrodes. In this case, the conductive layer may not be formed on the periphery of the embossment and the spacer of the second substrate.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. , Separation, substitution, and alteration of the invention will be apparent to those skilled in the art. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

300: liquid crystal display
310: first substrate
320: second substrate
TR: transistor
BM: Black Matrix

Claims (13)

A first color filter layer is disposed on an upper portion of the opening region, and the first color filter layer is disposed on an upper portion of the first substrate, wherein the first color filter layer is disposed on an upper portion of the thin film transistor, ;
A second substrate facing the first substrate and having an embossed reflection plate; And
And a liquid crystal layer disposed between the first substrate and the second substrate. The method according to claim 1,
Wherein the pixel electrode is formed in one region of the first color filter layer and the insulating film, and the source electrode and the drain of the thin film transistor are connected to the first color filter layer, And a source electrode and a drain electrode of the thin film transistor through a contact hole connected to one of the electrodes. 3. The method of claim 2,
And a common electrode laminated on the reflective plate. The method according to claim 1,
And a common electrode disposed in parallel with the pixel electrode and disposed between the pixel electrode and the pixel electrode, wherein the common electrode is disposed between the pixel electrode and the pixel electrode, The pixel electrode is formed on one side of the first color filter layer and the insulating film and is connected to either one of a source electrode and a drain electrode of the thin film transistor through a contact hole connected to one of a source electrode and a drain electrode of the thin film transistor. To the electrode of the liquid crystal display panel. 3. The method of claim 2,
Wherein a spacer is formed on the second substrate to maintain an interval between the first substrate and the second substrate at an upper portion of the thin film transistor. 6. The method of claim 5,
And a conductive layer is applied to an outer surface of the spacer. 6. The method of claim 5,
Wherein a second color filter layer is disposed on the thin film transistor, wherein the second color filter layer is formed in a region where the first color filter layer, the color filter, and the spacer overlap with each other, And the color of the first color filter layer is different from that of the first color filter layer. Disposing a thin film transistor in an element region on a first substrate and a color filter layer in an opening region, the color filter layer being stacked on the thin film transistor;
Forming a curved reflector on the second substrate; And
And bonding the first substrate and the second substrate to each other, and disposing a liquid crystal layer between the first substrate and the second substrate. 9. The method of claim 8,
Wherein the step of arranging the thin film transistor and the color filter layer comprises:
A thin film transistor is formed on the first substrate, a first color filter layer covering the thin film transistor and the first substrate is formed, and a part of the first color filter layer is exposed to form a source electrode and a drain electrode of the thin film transistor Forming a first contact hole such that any one of the electrodes is exposed;
A second color filter layer including a color filter having a color different from that of the first color filter layer is disposed on the first color filter layer in an area overlapping the thin film transistor, Forming a second contact hole connected to the second contact hole;
Depositing an insulating film on the first color filter layer and the second color filter layer, wherein a third contact hole is formed in the insulating film, the third contact hole being connected to the second contact hole; And
Forming a pixel electrode on the insulating layer and connecting the pixel electrode to one of the source electrode and the drain electrode through the first contact hole and the second contact hole; Gt; 9. The method of claim 8,
The step of forming the reflection plate may include:
Forming an embossment and a spacer on the second substrate, and forming a reflector on the embossment. 11. The method of claim 10,
Wherein the step of forming the emboss and the spacer further comprises the step of laminating a common electrode on an outer surface of the emboss and the spacer. 10. The method of claim 9,
The step of forming the pixel electrode on the insulating film may further include the step of forming the pixel electrode at a predetermined interval on the predetermined insulating film and a common electrode corresponding to the pixel electrode is disposed between the pixel electrodes Of the liquid crystal display device. 12. The method of claim 11,
Wherein when the first substrate and the second substrate are combined, the spacer is in contact with an area where the second color filter layer is formed.

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