CN109839782B - Display device, array substrate manufacturing method thereof and computer readable storage medium - Google Patents
Display device, array substrate manufacturing method thereof and computer readable storage medium Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
Abstract
The invention discloses a manufacturing method of an array substrate of a display device, which comprises the following steps: providing a substrate; manufacturing an active switch layer on the substrate; manufacturing a color resistance layer on the active switch layer; determining the number of color resistance layers in the corresponding area of the spacer layer; determining patterning parameters for manufacturing a light shielding layer according to the number of the color resistance layers; coating a spacer color resistance layer above the color resistance layer, and patterning the spacer color resistance layer according to the patterning parameters to form a spacer layer, wherein the spacer layer comprises a main spacer area and an auxiliary spacer area with a height difference, and the height of the spacer between the main spacer area is greater than that of the spacer between the auxiliary spacer areas. The invention also discloses a display device and a computer readable storage medium. The invention improves the display uniformity and the display effect of the display device.
Description
Technical Field
The invention relates to the technical field of liquid crystal display, in particular to a display device, a manufacturing method of an array substrate of the display device and a computer readable storage medium.
Background
With the increasing level of technology, more and more devices with display devices are used in daily life and work, such as televisions and mobile phones. Most Display devices are TFT-LCD (Thin Film Transistor-Liquid Crystal Display) type Display devices.
At present, when a TFT-LCD is manufactured, a color film is manufactured on a TFT substrate to form a COA structure, that is, a structure of a CF (color filter) on Array. In the structure of manufacturing the CF on the TFT, the CF is manufactured on the TFT according to the CF process, and is completely used by borrowing and transferring, and when manufacturing a BPS (black photo Spacer), the CF is manufactured on the color resist layer to form a black Spacer. When the display device is formed with the segment difference, if different segment differences are manufactured only by depending on the design of the light resistor or the gray-scale photomask/half-mask photomask, the segment difference is too small, or the uniformity of the segment difference is not good, so that the segment differences formed in the manufacturing of the TFT-LCD are different in size and poor in uniformity, and the display effect of the liquid crystal panel is poor.
Disclosure of Invention
The invention mainly aims to provide a manufacturing method of an array substrate of a display device, the display device and a computer readable storage medium, aiming at solving the problem that when the segment difference of the display device is formed at present, if different segment differences are manufactured only by depending on the design of a photoresistor or a gray scale photomask/half mask photomask, the segment difference is too small, or the uniformity of the segment difference is not good, the size of the segment difference formed in the manufacturing of a TFT-LCD is different, the uniformity is poor, and the display effect of a liquid crystal panel is poor.
In order to achieve the above object, an aspect of the present invention provides a method for manufacturing an array substrate of a display device, where the method for manufacturing an array substrate of a display device includes:
providing a substrate;
manufacturing an active switch layer on the substrate;
manufacturing a color resistance layer on the active switch layer;
determining the number of color resistance layers in the corresponding area of the spacer layer; determining patterning parameters for manufacturing a light shielding layer according to the number of the color resistance layers;
coating a spacer color resistance layer above the color resistance layer, and patterning the spacer color resistance layer according to the patterning parameters to form a spacer layer, wherein the spacer layer comprises a main spacer area and an auxiliary spacer area with a height difference, and the height of the spacer between the main spacer area is greater than that of the spacer between the auxiliary spacer areas.
Optionally, the step of determining patterning parameters for manufacturing the light shielding layer according to the number of the color resistance layers includes:
and determining the penetration rates of the mask plate corresponding to different shading areas according to the number of the color resistance layers, wherein the penetration rates of the different shading areas are different, and the penetration rates are patterning parameters for manufacturing the shading layers.
Optionally, the step of fabricating a color resistance layer on the active switching layer includes:
at least one color resistance layer is reserved in the light shielding area, and the color resistance layer is a red color resistance layer, a blue color resistance layer or a green color resistance layer.
Optionally, the step of fabricating an active switching layer on the substrate includes:
sequentially forming a grid electrode, a grid insulation layer, an active layer, a source electrode/drain electrode metal layer and a protective layer of an active switch layer on the substrate;
and a through hole is formed in the protective layer, a pixel electrode layer is manufactured on the protective layer in a patterning mode, and the pixel electrode layer is partially manufactured in the through hole and is in contact with the drain metal layer right below the through hole.
Optionally, after the step of sequentially forming the gate electrode, the gate insulating layer, the active layer, the source/drain metal layer, and the protective layer of the active switching layer on the substrate, the method further includes:
and after the protective layer is formed, forming a pixel electrode in a patterning mode, wherein the pixel electrode is not formed on the protective layer and is directly connected with the drain metal layer.
Optionally, when the substrate is manufactured into a color resistance layer, the substrate comprises a color resistance layer respectively located in the pixel region and a first color resistance pad layer formed by stacking at least one color resistance layer located in the non-pixel region; the spacers above the first color resistance pad high layer are in contact with the opposite substrate of the array substrate.
Optionally, when the substrate is used for manufacturing the color resistance layer, the substrate further includes a second color resistance pad high layer located in a non-pixel region, and the spacers above the second color resistance pad high layer are spaced towards the opposite substrate of the array substrate.
Further, to achieve the above object, another aspect of the present invention provides a display device including: a memory, a processor and a computer program stored on the memory and executable on the processor, which computer program, when executed by the processor, carries out the steps of the method as described above.
Optionally, the display device comprises an array substrate, and the array substrate is manufactured by the method;
an opposite substrate arranged opposite to the array substrate;
and the liquid crystal layer is filled between the opposite substrate and the array substrate.
In addition, to achieve the above object, the present invention also provides a computer readable storage medium having stored thereon an array substrate manufacturing program of a display device, which when executed by a processor, implements the array substrate manufacturing method of the display device as described above.
According to the invention, different patterning parameters for forming the black spacer layer are determined according to different numbers of the color resistance layers formed on the active switch layer of the substrate, and the coating of the spacer is completed according to the determined patterning parameters, so that the spacer layer at different positions is increased in uniformity, the condition that the difference between the TFT and the LCD is not uniform due to the non-uniform spacer is avoided, and the display uniformity and the display effect of the display device are improved.
Drawings
Fig. 1 is a schematic structural diagram of a display device of a hardware operating environment according to an embodiment of the present invention;
FIG. 2 is a schematic flowchart illustrating a method for fabricating an array substrate of a display device according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart illustrating the fabrication of a thin film transistor according to an embodiment of the present invention;
FIG. 4 is a schematic flow chart illustrating the fabrication of a thin film transistor according to another embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating architecture conversion for spacer fabrication according to an embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating a conversion of a spacer fabrication architecture according to another embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating architecture conversion for spacer fabrication according to yet another embodiment of the present invention.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The main solution of the embodiment of the invention is as follows: providing a substrate; manufacturing an active switch layer above the substrate; manufacturing a color resistance layer above the active switch layer; determining the number of color resistance layers in the corresponding area of the spacer layer; determining patterning parameters for manufacturing a light shielding layer according to the number of the color resistance layers; coating a spacer color resistance layer above the color resistance layer, and patterning the spacer color resistance layer according to the patterning parameters to form a spacer layer, wherein the spacer layer comprises a main spacer area and an auxiliary spacer area with a height difference, and the height of the spacer between the main spacer area is greater than that of the spacer between the auxiliary spacer areas.
When the segment difference of the display device is formed at present, if different segment differences are manufactured only by depending on the design of a light resistance self or a gray scale photomask/half mask photomask, the segment difference is too small, or the uniformity of the segment difference is not good, so that the segment differences formed in the manufacturing of the TFT-LCD are different in size and poor in uniformity, and the display effect of the liquid crystal panel is poor. The invention provides a solution, different patterning parameters for forming a spacer layer are determined according to different numbers of color resistance layers formed on an active switch layer of a substrate, coating of the spacer is completed according to the determined patterning parameters, the spacer is manufactured according to the different numbers of the color resistance layers, uniformity of the spacer layer at different positions is increased, the condition that the difference between the TFT and the LCD is not uniform due to non-uniform spacers is avoided, and display uniformity and display effect of a display device are improved.
As shown in fig. 1, fig. 1 is a schematic structural diagram of a display device of a hardware operating environment according to an embodiment of the present invention.
As shown in fig. 1, the display device may include: a processor 1001, such as a CPU, a network interface 1004, a user interface 1003, a memory 1005, a communication bus 1002. Wherein a communication bus 1002 is used to enable connective communication between these components. The user interface 1003 may include a Display screen (Display), an input unit such as a Keyboard (Keyboard), and the optional user interface 1003 may also include a standard wired interface, a wireless interface. The network interface 1004 may optionally include a standard wired interface, a wireless interface (e.g., WI-FI interface). The memory 1005 may be an SRAM memory or a non-volatile memory (e.g., a magnetic disk memory). The memory 1005 may alternatively be a storage device separate from the processor 1001.
Optionally, the display device may further include a camera, a Radio Frequency (RF) circuit, a sensor, an audio circuit, a WiFi module, and the like.
Those skilled in the art will appreciate that the terminal structure shown in fig. 1 does not constitute a limitation of the display device and may include more or fewer components than those shown, or some components may be combined, or a different arrangement of components.
As shown in fig. 1, an array substrate fabrication application of an operating system, a network communication module, a user interface module, and a display device may be included in a memory 1005, which is a computer-readable storage medium.
In the display device shown in fig. 1, the network interface 1004 is mainly used for connecting to a backend server and performing data communication with the backend server; the user interface 1003 is mainly used for connecting a client (user side) and performing data communication with the client; the processor 1001 may be configured to call the array substrate manufacturing application of the display device stored in the memory 1005, and perform the following operations:
providing a substrate;
manufacturing an active switch layer on the substrate;
manufacturing a color resistance layer above the active switch layer;
determining the number of color resistance layers in the corresponding area of the spacer layer; determining patterning parameters for manufacturing a light shielding layer according to the number of the color resistance layers;
coating a spacer color resistance layer above the color resistance layer, and patterning the spacer color resistance layer according to the patterning parameters to form a spacer layer, wherein the spacer layer comprises a main spacer area and an auxiliary spacer area with a height difference, and the height of the spacer between the main spacer area is greater than that of the spacer between the auxiliary spacer areas.
Further, the processor 1001 may be configured to call an array substrate manufacturing application of the display device stored in the memory 1005, and perform the following operations:
and determining the penetration rates of the mask plate corresponding to different shading areas according to the number of the color resistance layers, wherein the penetration rates of the different shading areas are different, and the penetration rates are patterning parameters for manufacturing the shading layers.
Optionally, the step of fabricating a color resistance layer above the active switching layer comprises:
at least one color resistance layer is reserved in the light shielding area, and the color resistance layer is a red color resistance layer, a blue color resistance layer or a green color resistance layer.
Further, the processor 1001 may be configured to call an array substrate manufacturing application of the display device stored in the memory 1005, and perform the following operations:
sequentially forming a grid electrode, a grid insulation layer, an active layer, a source electrode/drain electrode metal layer and a protective layer of an active switch layer on the substrate;
and a through hole is formed in the protective layer, a pixel electrode layer is manufactured on the protective layer in a patterning mode, and the pixel electrode layer is partially manufactured in the through hole and is in contact with the drain metal layer right below the through hole.
Further, after the steps of sequentially forming the gate electrode of the active switching layer, the gate insulating layer, the active layer, the source/drain metal layer and the protective layer on the substrate, the processor 1001 may be configured to call an array substrate manufacturing application of the display device stored in the memory 1005, and perform the following operations:
and after the protective layer is formed, forming a pixel electrode in a patterning mode, wherein the pixel electrode is not formed on the protective layer and is directly connected with the drain metal layer.
Further, the processor 1001 may be configured to call an array substrate manufacturing application of the display device stored in the memory 1005, and perform the following operations: when the substrate is used for manufacturing the color resistance layer, the color resistance layer comprises color resistances respectively positioned in a pixel area and a first color resistance cushion high layer which is positioned in a non-pixel area and is formed by stacking at least one color resistance layer; the spacers above the first color resistance pad high layer are in contact with the opposite substrate of the array substrate.
Further, the processor 1001 may be configured to call an array substrate manufacturing application of the display device stored in the memory 1005, and perform the following operations: when the substrate is used for manufacturing the color resistance layer, the array substrate further comprises a second color resistance pad high layer positioned in a non-pixel area, and the spacers above the second color resistance pad high layer are arranged towards the opposite substrate of the array substrate at intervals.
Referring to fig. 2, an embodiment of the present invention provides a method for manufacturing an array substrate of a display device, where the method for manufacturing an array substrate of a display device includes:
step S10, providing a substrate;
in this embodiment, the TFT-LCD (Thin Film Transistor-Liquid Crystal Display) is capable of displaying different colors and pictures because there are many R red pixels, G green pixels, and B blue pixels in the panel, and these 3 pixels can Display different colors under different brightness. And providing a backlight source matched with the requirement of pixel display, wherein the backlight source gives out light rays, and then the required color is generated by transmitting the liquid crystal and the pixel.
Providing a substrate, wherein the substrate is a glass substrate, and the provided substrate is a cleaned substrate.
Step S20, fabricating an active switching layer over the substrate; the active switch layer can be selected from a thin film transistor and other switch components which can control liquid crystal display.
Fabricating a thin film transistor TFT on a substrate, and referring to fig. 3, the process of the thin film transistor includes:
step S21, sequentially forming a gate electrode, a gate insulating layer, an active layer, a source/drain metal layer, and a protective layer of the thin film transistor on the substrate;
step S22, forming a through hole in the passivation layer, and forming a pixel electrode layer on the passivation layer in a patterned manner, wherein a portion of the pixel electrode layer is formed in the through hole and contacts with the drain metal layer directly below the through hole. Depositing a first metal layer on the array substrate; performing a first mask exposure and etching process to define the pattern of the first metal layer to form a gate in the first metal layer; depositing an insulating layer on the substrate to cover the surface of the first metal layer; depositing a semiconductor layer, a doped silicon layer and a second metal layer in sequence, and performing a second photomask and etching process to define the patterns of the semiconductor layer, the doped silicon layer and the second metal layer so as to form a thin film transistor island-shaped structure; and carrying out a third photomask and corrosion manufacturing process to form a source/drain metal layer in the second metal layer and the doped silicon layer, and finishing the manufacture of the thin film transistor. A protective layer is formed on the TFT and covers the surface of the thin film transistor and the signal line. Specifically, the manufacturing process of the TFT is as follows: metal 1Process, first metal layer fabrication Process;
metal 1 coating, photoresist coating/exposing/developing, M1 wet etching, and photoresist stripping;
GIN process, process of manufacturing insulating layer;
coating a GIN layer by a CVD (chemical vapor deposition) method, coating/exposing/developing a photoresist, etching the GIN layer, and removing the photoresist;
metal 2Process, second metal layer fabrication Process;
metal 2 coating, photoresist coating/exposing/developing, M2 wet etching, N + etching and photoresist stripping;
a passivation Process, a protective layer manufacturing Process;
CVD coating, coating/exposing/developing photoresist, etching, and removing photoresist.
After the protective layer is formed, dry etching is performed to form a contact hole in the protective layer, thereby forming a protective layer pattern. The method comprises the steps of firstly, comprehensively depositing a first metal layer on the surface of a substrate, then, carrying out a first photomask corrosion manufacturing process, forming a grid electrode and a scanning line on the substrate, wherein the grid electrode and the scanning line are connected, and after the first photomask corrosion manufacturing process is completed, comprehensively depositing an insulating layer, a semiconductor layer, a doped silicon layer and a second metal layer on the substrate. The semiconductor layer is made of polysilicon or amorphous silicon material and is set according to conditions such as manufacturing process and display requirements. And finally, performing a second mask etching manufacturing process to limit the semiconductor layer, the doped silicon layer and the second metal layer pattern so as to form a thin film transistor island-shaped structure. And performing a third photomask corrosion manufacturing process to form a signal line, a source electrode and a drain electrode metal layer in the second metal layer and the doped silicon layer to finish the manufacturing of the TFT. And after the third photomask etching manufacturing process is finished, forming a protective layer on the substrate and covering the surfaces of the TFT thin film transistor and the signal line. Performing dry etching on the protective layer to form a source contact hole, a drain contact hole and a signal line contact hole, so that when a pixel electrode is manufactured, the pixel electrode fills the contact holes, and the pixel electrode is connected with the drain electrode through the contact holes; and after the protective layer is formed, forming a pixel electrode in a patterning mode, wherein the pixel electrode is not formed on the protective layer and is directly connected with the drain metal layer.
In one embodiment, in order to reduce the manufacturing process, referring to fig. 4, after step S21, the following steps may be further performed: in step S23, after the protective layer is formed, a pixel electrode is formed in a patterning manner, the pixel electrode is not formed on the protective layer, and the pixel electrode is directly connected to the drain metal layer. That is, after the protective layer is coated, a fourth light and etching process is performed without performing a dry etching operation and without forming a contact hole, so as to define the pattern of the pixel electrode, such that the pixel electrode is formed on the gate insulating layer and not formed on the protective layer. After forming the protective layer, depositing an ITO (indium tin oxide) photoresist on the substrate in a comprehensive manner, and forming an ITO pixel electrode on the grid layer without forming on the protective layer through a fourth photomask and an etching manufacturing process (development), ITO wet etching, photoresist removing and ITO OVEN (baking). The steps S22 and S23 are optionally performed to complete only one of the coating processes.
Step S30, manufacturing a color resistance layer above the active switch layer;
after forming a TFT and a pixel electrode on a substrate, a color resistance layer is manufactured above the pixel electrode layer, the color resistance layer is a red color resistance layer, a green color resistance layer and a blue color resistance layer, and the film thicknesses of the three color resistance layers are different. The order of the manufacturing process can be random and is not limited, and generally, the red color resistance layer is firstly completed, then the green color resistance layer is completed, and finally the blue color resistance layer is manufactured. The manufacturing process is completed in a patterning mode. When the color resistance layer is manufactured, besides the color resistance layer is manufactured in the light-transmitting area of the pixel, the color resistance layer is also reserved in the non-light-transmitting area, and the color resistance layer reserved in the non-light-transmitting area is at least one color resistance layer, for example, only the red color resistance layer can be reserved, and the red color resistance layer and the green color resistance layer can be reserved at the same time. While the portion of the color resist layer remains at a position corresponding to the position where the main spacer is disposed, rather than the position where the sub spacer is disposed.
Step S40, determining the number of color resistance layers in the corresponding area of the spacer layer; determining patterning parameters for manufacturing a light shielding layer according to the number of the color resistance layers;
after the color resistance layer is manufactured, the spacer layer is manufactured, and the patterning parameters of the spacer manufacturing are determined according to the number of the color resistance layers which are reserved in the non-light-transmitting area (light-shielding area, corresponding to the display area) before, wherein the non-light-transmitting area is the spacer layer corresponding area, and the number of the color resistance layers in the spacer layer corresponding area is determined; and determining patterning parameters for manufacturing the light shielding layer according to the number of the color resistance layers, wherein the transmittance of different opaque regions is different for different color resistance layers. Specifically, the penetration rates of the mask corresponding to different shading areas are determined according to the number of the color resistance layers, the penetration rates of the different shading areas are different, the penetration rates are patterning parameters for manufacturing shading layers, the penetration rates are the penetration rates set by the mask, the penetration rates are different, the light transmission rates are different, the thicknesses of the formed color resistance layers are different, and/or the positions of the formed color resistance layers, where the light resistance layers are located, are not reserved. The number of color resist layers is different, for example, when only one color resist layer is in a non-light-transmission region, transmittance T1> T2 of the mask is determined (transmittance of the mask in different regions is T1 and T2, the different region T1 is a region corresponding to the spacer, and T2 is a region other than the region corresponding to the spacer), and when two color resist layers are in a non-light-transmission region, T1 is T2 or T1< T2 because the film thickness of PS is superimposed by a plurality of color resist layers.
Step S50, coating a spacer color-resistant layer on the color-resistant layer, patterning the spacer color-resistant layer with the patterning parameters to form a spacer layer, where the spacer layer includes a main spacer region and an auxiliary spacer region having a height difference, and the height of the spacer in the main spacer region is greater than that of the spacer in the auxiliary spacer region.
And coating a spacer color resistance layer, namely coating a photosensitive material, irradiating the photosensitive material by adopting the light of the patterning parameters determined in the step S40, and irradiating the photosensitive material layer by using the light through a mask plate to form a spacer layer, wherein the spacer layer comprises a main spacer area and an auxiliary spacer area with height difference, and the height of the spacer in the main spacer area is greater than that of the spacer in the auxiliary spacer area. The main spacer region is formed on the color resist layer, and the auxiliary spacer region is formed in the non-transparent region not covered with the color resist layer. The spacer color resist layer can be selected to be black, and can also be light-shading light-resistant material with other colors.
In one embodiment, when the color resist layer is made on the substrate in the non-transparent region, i.e. the non-pixel region, the color resist layer comprises a color resist layer located in the pixel region and a first color resist pad layer formed by stacking at least one color resist layer located in the non-pixel region; the black spacer above the first color resistance pad high layer is contacted with the opposite substrate of the array substrate. When the substrate is used for manufacturing the color resistance layer, the array substrate further comprises a second color resistance pad high layer positioned in a non-pixel area, and the spacers above the second color resistance pad high layer are arranged towards the opposite substrate of the array substrate at intervals.
The embodiment determines different patterning parameters for forming the spacer layer through different numbers of the color resistance layers formed on the substrate active switch layer, finishes coating the spacer according to the determined patterning parameters, and can be manufactured according to different numbers of the color resistance layers, so that the uniformity of the spacer layer at different positions is increased, the condition that the difference between the TFT and the LCD is not uniform due to the non-uniform spacer is avoided, and the display uniformity and the display effect of the display device are improved.
In one embodiment, to better describe the embodiments of the present invention, the spacers are black spacers, and the process of manufacturing the black spacer layer includes: in a COA (color filter on Array, a color film substrate is manufactured on an Array substrate) structure, an R/G/B color layer is manufactured on a TFT (thin film transistor) substrate, the color layer sequence can be random, then an organic protective layer is manufactured, a black spacer layer is manufactured, and black spacers with different section differences are manufactured by matching different Mask designs according to the condition of reserving the color layer;
according to the step 1, in which R/G/B films are different in thickness, at least one color layer is remained in the in-plane light-shielding region
According to the step 2, when only one color layer is reserved, matching with a half-tone mask (a photomask plate), wherein the mask (the photomask plate) penetration rate T1 is greater than T2 during exposure of a light resistor, and the corresponding stroke section difference is delta H;
according to the step 2, when 2 color layers are reserved, the number of R/G/B is any two, the film thickness of a shading area is R not equal to G not equal to B, and when a second color layer is manufactured, a half-tone mask design is matched to obtain black spacers with different level differences. Referring to FIG. 5, in the shading area, only one layer of layer (left) BPS layer is coated and matched with half-tone mask, and the penetration rate T1> T2 (middle); after exposure (right), a step difference delta Hb is formed, wherein 11 is an auxiliary spacer, 12 is a main spacer, and 101 is a blue color resist layer;
the following is that only G green color resistance layer (figure 6) is coated on the light shielding area (non-light transmission area) to form a step difference delta Hg, wherein 21 is an auxiliary spacer, 22 is a main spacer, and 201 is a green color resistance layer; only the R red color resist layer (FIG. 7) is coated on the light-shielding region to form a step Δ Hr, wherein 31 is the auxiliary spacer and 32 is the main spacer 301 is the red color resist layer.
In one embodiment, the recipe (patterning parameter) of the photomask plate for coating the color resist layer and the black spacer layer can be set in advance at the beginning of production line production without switching in the production process, and the production efficiency is improved by switching and detecting in advance.
In addition, an embodiment of the present invention further provides a display device, where the display device includes a display panel and a timing controller connected to the display panel, the timing controller is loaded with an array substrate manufacturing apparatus of the display device, the display panel completes control of an array substrate manufacturing process of the display device under control of the timing controller, and a manufacturing method of an array substrate of the display device stored in the timing controller is completed by the array substrate manufacturing method of the display device in the above embodiment, and the array substrate manufacturing method of the display device is loaded on the array substrate manufacturing apparatus of the display device. The display device can be a mobile or fixed display device such as a television, a mobile phone, a pad (flat panel), a machine display instrument and the like. The display device of the embodiment determines different patterning parameters for forming the black spacer layer through different numbers of the color resistance layers formed on the substrate active switch layer, completes coating of the spacer according to the determined patterning parameters, and can be manufactured according to the different numbers of the color resistance layers, so that the uniformity of the spacer layer at different positions is increased, the condition that the difference between the TFT and the LCD is not uniform due to the non-uniform spacer is avoided, and the display uniformity and the display effect of the display device are improved.
The display device in the embodiment includes an array substrate; the opposite substrate is arranged opposite to the array substrate; and the liquid crystal layer is filled between the opposite substrate and the array substrate, and the array substrate is formed by the manufacturing of the embodiment. The opposite substrate is a color film substrate, a pixel electrode is arranged above the opposite substrate, the main spacer interval spacer is contacted with the pixel electrode of the opposite substrate, and the auxiliary spacer interval spacer is arranged at intervals with the pixel electrode of the opposite substrate.
In addition, an embodiment of the present invention further provides a computer-readable storage medium, and a computer-readable storage medium, where an array substrate manufacturing program of a display device is stored on the computer-readable storage medium, and when the array substrate manufacturing program of the display device is executed by a processor, the array substrate manufacturing method of the display device according to the above embodiment is implemented.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.
Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a computer-readable storage medium (such as ROM/RAM, magnetic disk, optical disk) as described above, and includes several instructions for enabling a terminal device (such as a mobile phone, a computer, a server, an air conditioner, or a network device) to execute the method according to the embodiments of the present invention.
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. The manufacturing method of the array substrate of the display device is characterized by comprising the following steps of:
providing a substrate;
manufacturing an active switch layer on the substrate;
manufacturing a color resistance layer on the active switch layer;
determining the number of color resistance layers in the corresponding area of the spacer layer; determining patterning parameters for manufacturing a light shielding layer according to the number of the color resistance layers;
coating a spacer color resistance layer on the color resistance layer, and patterning the spacer color resistance layer according to the patterning parameters to form a spacer layer, wherein the spacer layer comprises a main spacer area and an auxiliary spacer area with height difference, and the height of the spacer between the main spacer area is greater than that of the spacer between the auxiliary spacer areas.
2. The method for manufacturing the array substrate of the display device according to claim 1, wherein the step of determining the patterning parameters for manufacturing the light-shielding layer according to the number of the color-resist layers comprises:
and determining the penetration rates of the mask plate corresponding to different shading areas according to the number of the color resistance layers, wherein the penetration rates of the different shading areas are different, and the penetration rates are patterning parameters for manufacturing the shading layers.
3. The method for manufacturing an array substrate of a display device according to claim 1, wherein the step of manufacturing the color-resist layer on the active switching layer comprises:
at least one color resistance layer is reserved in the light shielding area, and the color resistance layer is a red color resistance layer, a blue color resistance layer or a green color resistance layer.
4. The method of claim 1, wherein the step of forming an active switching layer over the substrate comprises:
sequentially forming a grid electrode, a grid insulation layer, an active layer, a source electrode/drain electrode metal layer and a protective layer of an active switch layer on the substrate;
and a through hole is formed in the protective layer, a pixel electrode layer is manufactured on the protective layer in a patterning mode, and the pixel electrode layer is partially manufactured in the through hole and is in contact with the drain metal layer right below the through hole.
5. The method for manufacturing an array substrate of a display device according to claim 4, wherein after the step of sequentially forming the gate electrode, the gate insulating layer, the active layer, the source/drain metal layer and the protective layer of the active switching layer on the substrate, further comprising:
and after the protective layer is formed, forming a pixel electrode in a patterning mode, wherein the pixel electrode is not formed on the protective layer and is directly connected with the drain metal layer.
6. The method for manufacturing the array substrate of the display device according to claim 1, wherein the substrate includes a color resist layer in the pixel region and a first color resist pad layer formed by stacking at least one color resist layer in the non-pixel region; the spacers above the first color resistance pad high layer are in contact with the opposite substrate of the array substrate.
7. The method for fabricating the array substrate of the display device according to claim 6, wherein the substrate further comprises a second color resist pad layer located in a non-pixel region when the color resist layer is fabricated, and the spacers above the second color resist pad layer are spaced toward the opposite substrate of the array substrate.
8. A display device, characterized in that the display device comprises: memory, processor and computer program stored on the memory and executable on the processor, which computer program, when executed by the processor, carries out the steps of the method according to any one of claims 1 to 7.
9. The display device of claim 8, wherein the display device comprises an array substrate fabricated by the method of any one of claims 1 to 7;
an opposite substrate arranged opposite to the array substrate;
and the liquid crystal layer is filled between the opposite substrate and the array substrate.
10. A computer-readable storage medium, having stored thereon an array substrate fabrication program of a display device, which when executed by a processor, implements the array substrate fabrication method of the display device according to any one of claims 1 to 7.
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| CN201811598096.0A CN109839782B (en) | 2018-12-25 | 2018-12-25 | Display device, array substrate manufacturing method thereof and computer readable storage medium |
| PCT/CN2019/123954 WO2020134994A1 (en) | 2018-12-25 | 2019-12-09 | Display device and method for fabricating array substrate thereof, and computer-readable storage medium |
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| KR20070100634A (en) * | 2006-04-07 | 2007-10-11 | 우 옵트로닉스 코포레이션 | Method for manufacturing lower substrate of liquid crystal display device |
| CN105739185A (en) * | 2016-05-10 | 2016-07-06 | 深圳市华星光电技术有限公司 | Liquid crystal panel and manufacturing method thereof |
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| JP4818065B2 (en) * | 2006-02-03 | 2011-11-16 | 東芝モバイルディスプレイ株式会社 | Liquid crystal display |
| JP5515845B2 (en) * | 2010-02-23 | 2014-06-11 | 大日本印刷株式会社 | Color filter with resistive touch panel function and display device including the color filter |
| CN103019448B (en) * | 2012-12-21 | 2015-09-23 | 北京京东方光电科技有限公司 | A kind of color membrane substrates method for making, color membrane substrates and display device |
| CN103257482B (en) * | 2013-03-19 | 2015-08-12 | 京东方科技集团股份有限公司 | Color membrane substrates and preparation method thereof and liquid crystal panel |
| CN107039352B (en) * | 2017-04-12 | 2019-09-10 | 深圳市华星光电半导体显示技术有限公司 | The production method and TFT substrate of TFT substrate |
| CN107505761B (en) * | 2017-09-18 | 2020-06-12 | 惠科股份有限公司 | Color filter and manufacturing method of liquid crystal display panel |
| CN107589596A (en) * | 2017-09-25 | 2018-01-16 | 惠科股份有限公司 | Display panel and its manufacture method |
| CN107688254B (en) * | 2017-10-11 | 2020-05-29 | 深圳市华星光电半导体显示技术有限公司 | COA type liquid crystal display panel and manufacturing method thereof |
| CN207780438U (en) * | 2017-12-05 | 2018-08-28 | 昆山龙腾光电有限公司 | Liquid crystal display panel and display device |
| CN109061969B (en) * | 2018-08-31 | 2021-09-28 | Tcl华星光电技术有限公司 | Array substrate and display panel thereof |
| CN109839782B (en) * | 2018-12-25 | 2021-01-05 | 惠科股份有限公司 | Display device, array substrate manufacturing method thereof and computer readable storage medium |
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| KR20070100634A (en) * | 2006-04-07 | 2007-10-11 | 우 옵트로닉스 코포레이션 | Method for manufacturing lower substrate of liquid crystal display device |
| CN105739185A (en) * | 2016-05-10 | 2016-07-06 | 深圳市华星光电技术有限公司 | Liquid crystal panel and manufacturing method thereof |
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