KR20180062253A - Organic Light Emitting Display Device - Google Patents

Abstract

The present invention relates to an organic light emitting display device capable of preventing outgassing generated in outer layers of an organic light emitting diode (OLED) from affecting the OLED. According to the present invention, the organic light emitting display device comprises: the OLED including first and second electrodes facing each other, and an organic light emitting layer disposed between the first and second electrodes; an organic capping layer close to the second electrode; a first outgassing blocking layer to cover the organic capping layer; and an encapsulation body to cover the first outgassing blocking layer.

Description

[0001] The present invention relates to an organic light emitting display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode (OLED) display, and more particularly, to an organic light emitting diode (OLED) display that prevents outgassing generated in layers outside an organic light emitting diode from affecting an organic light emitting diode.

Recently, the field of display that visually expresses electrical information signals has rapidly developed as the information age has come to a full-fledged information age. In response to this, various flat panel display devices (flat display devices) having excellent performance such as thinning, light- Display Device) has been developed to replace CRT (Cathode Ray Tube).

Specific examples of such flat panel display devices include a liquid crystal display device (LCD), a plasma display panel (PDP), a field emission display (FED) (Organic Light Emitting Device: OLED).

Among these, an organic light emitting display is considered as a competitive application for not requiring a separate light source, compacting the device, and displaying a clear color image.

On the other hand, the organic light emitting display device is implemented by a terminal such as a television, a monitor, a cellular phone, or various types of display devices. In this case, durability is required depending on the environment in which the organic light emitting display is placed or carried.

In particular, ultraviolet rays (UV rays) are problematic in a strong sunlight environment. Ultraviolet rays are a main cause of deterioration of the lifetime of the respective organic light emitting layers included in the organic light emitting display device due to denaturation and deterioration thereof. Therefore, after the organic EL display device is exposed to ultraviolet light for a predetermined time, the current-voltage characteristic of the organic light emitting display device deteriorates, driving voltage increases, and the lifetime is significantly reduced.

The present invention has been made in order to solve the above-mentioned problems, and in particular, to an organic light emitting display in which outgasing generated in the layers outside the organic light emitting diode is prevented from affecting the organic light emitting diode.

The organic light emitting diode display of the present invention has an outgassing barrier layer on the upper side or the lower side of the organic light emitting diode to prevent the influence or deterioration due to outgas emitted to the outside or inner thin film transistor region of the organic light emitting diode.

An organic light emitting diode display according to the present invention includes a first electrode and a second electrode facing each other, an organic light emitting diode including an organic light emitting layer disposed between the first and second electrodes, An organic capping layer on the electrode, a first outgassing barrier layer covering the organic capping layer, and a plug covering the first outgassing barrier layer.

The first outgas blocking layer may include a metal having reactivity with a halogen element and a nonmetal, and having a work function value less than a work function of the second electrode.

In this case, the metal forming the first outgassing barrier layer may be a metal having a monovalent, divalent or trivalent ionization tendency. For example, the metal may be Ba (Barium), Ce (Cerium), Cs, Eu, Europium, Gd, , Nd (Neodymium), Rb (Rubidium), Sc (Scandium), Sm (Samarium), Sr (Strontium), Yb (Ytterbium) and Y (Yttrium).

The thickness of the first outgassing barrier layer may be between 10 Å and 50 Å.

The organic light emitting diode may further include a barrier film opposed to the surface of the plug that is not opposed to the first outgassing barrier layer and facing the substrate on the periphery of the organic light emitting diode.

The first outgassing barrier layer may react with the outgass coming from the barrier film, the plug and the organic capping layer.

In addition, the plug body may include a thin film laminate composed of an alternate stack of an inorganic sealing film and an organic sealing film.

The organic capping layer may cover the top and side surfaces of the organic light emitting diode.

A thin film transistor electrically connected to the first electrode and a protective film disposed between the thin film transistor and the first electrode may be further disposed under the first electrode.

In addition, a second outgassing barrier layer may be further provided between the protective layer and the first electrode, the second outgassing barrier layer being in contact with the first electrode. The second outgassing barrier layer may react with the outgas generated by the thin film transistor and the protective film.

At least one of the first outgassing barrier layer and the second outgasing barrier layer is made of a metal having reactivity with a halogen element and a nonmetal and having a work function value that is lower than a work function of the second electrode, The metal forming at least one of the barrier layer and the second outgassing barrier layer may be a metal having a monovalent, divalent or trivalent ionization tendency.

The thickness of the first outgas insulating layer and the second outgas blocking layer is preferably in the range of 10 to 50 Angstroms.

Meanwhile, the substrate may include an active region including a plurality of sub-pixels and a dead region around the active region, and the organic light emitting diode may be provided for each of the sub-pixels.

The organic light emitting display of the present invention has the following effects.

First, the organic light emitting display of the present invention includes an outgassing barrier layer on the organic capping layer covering the organic light emitting diode, and the outgas generated from the outside of the organic light emitting diode reacts with the metal included in the outgassing barrier layer , It is possible to prevent the organic light emitting diode from being deteriorated by the outgas.

Second, the outgassing barrier layer may be provided under the organic light emitting diode to prevent the outgas generated from the thin film transistor array on the lower side of the organic light emitting diode from deteriorating the organic light emitting diode.

Thirdly, since the outgassing barrier layer is provided, time is elapsed due to ultraviolet rays, outgas emitted from the organic capping layer, the thin film bag, and the barrier film outside the organic light emitting diode remain in the outgas blocking layer, It is possible to maintain the lifetime and the reliability of the driving voltage even in an environment which is badly conditioned by high temperature and sunlight.

1 is a cross-sectional view showing an organic light emitting display device according to the present invention
2 is a cross-sectional view showing one sub-pixel of the organic light emitting diode display according to the first embodiment of the present invention
3 is a cross-sectional view showing one sub-pixel of the organic light emitting diode display according to the second embodiment of the present invention
4 is a graph showing the voltage vs. current density characteristics of the organic light emitting display according to the embodiment of the present invention and after irradiation with UV for 80 hours
FIG. 5 is a graph showing changes in efficiency with time in the organic light emitting display according to the embodiment of the present invention and after 80 hours of UV irradiation
6 is a graph showing the change of? V with time elapsed after 80 hours of UV irradiation of the organic light emitting display according to the embodiment of the present invention and the conventional OLED display

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Like reference numerals throughout the specification denote substantially identical components. In the following description, when it is determined that a detailed description of a technique or configuration related to the present invention may unnecessarily obscure the gist of the present invention, a detailed description thereof will be omitted. The component names used in the following description are selected in consideration of easiness of specification, and may be different from the parts names of actual products.

The shapes, sizes, ratios, angles, numbers and the like disclosed in the drawings for describing various embodiments of the present invention are illustrative, and thus the present invention is not limited to those shown in the drawings. Like reference numerals refer to like elements throughout. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements included in the various embodiments of the present invention, the scope of the present invention is interpreted as including an error range without any explicit description.

 In describing the various embodiments of the present invention, when describing the positional relationship, for example, the positional relationship may be expressed in terms of 'on', 'on top', 'under', 'next to' If the positional relationship of the part is described, one or more other parts may be located between the two parts, unless " straight " or " direct "

In describing the various embodiments of the present invention, when describing the time relationship, for example, the term 'after', 'following', 'after', and 'before' When the temporal posterior relationship is described, it may include cases in which 'right' or 'direct' is not used and is not continuous.

In describing various embodiments of the present invention, the terms 'first', 'second', etc. may be used to describe various elements, but these terms are also used to distinguish between similar and similar components to be. Therefore, unless otherwise stated, the constituent elements of the present invention may be the same as those of the second constituent element of the present invention.

 It is to be understood that each of the various features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, and technically various interlocking and driving are possible, and that each of the various embodiments may be practiced independently of each other, It is possible.

1 is a cross-sectional view showing an organic light emitting display device according to the present invention.

1, the OLED display of the present invention includes a first electrode 110 and a second electrode 310 facing each other on a substrate 100, first and second electrodes 110 and 310 An organic light emitting diode OLED having an organic layer 200 including an organic light emitting layer EML positioned between the first electrode 310 and the second electrode 310, an organic capping layer 400 contacting the second electrode 310, A first outgassing barrier layer 500 covering the first outgassing barrier layer 400 and a thin film plug body 600 covering the first outgassing barrier layer.

The barrier film 700 covers the thin film encapsulant 600 and is opposed to the surface of the thin film encapsulant that is not opposed to the first outpacing blocking layer 500, And may be further provided so as to face the substrate 100 on the outer periphery. The barrier film 700 may be optional.

The barrier film 700 is optically transparent and is an optical film having isotropic or anisotropic properties. The barrier film 700 may be formed of a material such as a cyclic olefin copolymer (COC), a cyclic olefin polymer (COP), a polycarbonate (PC), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or the like.

The organic layered body 200 between the first and second electrodes 110 and 310 of the organic light emitting diode OLED includes, for example, a hole injection layer (HIL), a hole transport layer (HTL) A blocking layer (EBL), an organic light emitting layer (EML), and an electron transporting layer (ETL). The remaining layers of the organic laminate 200 other than the organic light emitting layer (EML) may be optionally omitted. At least one of the layers may be a plurality of layers. An electron injection layer 300 may be further provided between the electron transport layer ETL and the second electrode 310 to assist injection of electrons into the organic layered body 200 from the second electrode 310. The electron injection layer 300 may be made of an inorganic material such as LiF or Li ₂ O or an alkali metal or an alkaline earth metal such as Li, Ca, Mg, or Sm. After the organic material layer 200 is formed, May be formed through the same process of vapor deposition or sputtering just before formation of the electrode 310.

Here, the substrate 100 may be a hard glass substrate or a flexible substrate. In the latter case, the substrate 100 may be a glass substrate that is thin and soft, or may be a polyethylene naphthalate (PEN), a polyethylene terephthalate (PET) But are not limited to, polyethylene etherphthalate, polycarbonate, polyarylate, polyether imide, polyether sulfonate, polyimide, polyacrylate, Polyacrylate, and the like. When the substrate 100 is formed into a substrate, it may be a film image when formed of polyethylene naphthalate, polyethylene terephthalate, polyethylene ether phthalate, polycarbonate, or a polyarylate, a polyether imide, , Polyether sulfonate, polyimide, and polyacrylate, it is applied to a glass mother board by liquefaction using these materials, and then a thin film transistor, an organic light emitting diode After the process is completed, the glass mother substrate can be removed to reduce the thickness to a level of 20 μm or less.

The first outpacing blocking layer 500 may include a metal having reactivity with a halogen element and a nonmetal and having a work function that is lower than a work function of the second electrode 310. That is, the first out gas generating barrier layer 500 may be made of a single metal of the above-mentioned nature, or may be a metal alloy, or may be formed of a metal halide or a metal oxide (metal oxide).

In this case, the metal contained in the first out gas generating barrier layer 500 is a metal having a monovalent, divalent or trivalent ionization tendency, and may be any one of alkali metals, alkaline earth metals, lanthanum metals, and actinide metals The metal may be Ba (Barium), Ce (Cerium), Cs, Eu, Europium, Gadolinium, K, (Natrium), Nd (Neodymium), Rb (Rubidium), Sc (Scandium), Sm (Samarium), Sr (Strontium), Yb (Ytterbium) and Y (Yttrium). These are metals with high reactivity with halogen elements and non-metals, respectively. The outgassing occurring in the organic capping layer 400, the thin film bag 600 and the barrier film 700 around the first out gas generating barrier layer 500 It reacts by ionization. The metal reacted with the outgass remains in the first outgassing barrier layer 500 in a stabilized reactant state to prevent the outgas from entering the organic light emitting diode, Thereby preventing deterioration.

The reason why the first outgas blocking layer 500 uses a metal having a lower work function or the same work function as the second electrode 310 is that even if a part of the electrons escaping from the second electrode 310 is a low work function So that the electron injection can be returned to the second electrode 310 with an easy electron injection characteristic.

The thickness of the first outpacing gas barrier layer 500 may be about 10 Å to about 50 Å. Thus, the first outgas blocking layer 500 can function as an electron injection function to the second electrode 310 side together with the outgassing.

The reason why the first outgas insulating layer 500 is provided is as follows.

For example, if a device is irradiated with UV for a certain period of time, for example, in an organic light emitting display device having no first outgassing barrier layer, for example, the electron injection layer may be made of LiF and the second electrode may be made of an AgMg alloy The Li + ion dissociated in the electron injection layer reacts with the outgassing component X generated in the second electrode outer layer and becomes LiX, thereby deteriorating the electron injection performance. Further, the second electrode also reacts with the outgassing component (X) due to the Mg component, and the Ag: Mg ratio inside the second electrode can not be made uniform, resulting in aggregation of Ag, resulting in deterioration of the cathode function . The first outgassing barrier layer 500 of the present invention is intended to solve this problem. That is, considering that the outgas generated in the organic capping layer 400, the thin film bag 600 and the barrier film 700 around the first out gas generating barrier layer 500 is a non-metal component or a halogen element, Out gas is contained in the material constituting the first outgassing barrier layer 500 so that outgassing occurs in the adjacent first outgassing barrier layer 500 even if outgassing occurs in these layers Thereby preventing the outgas from entering the organic light emitting diode.

The organic light emitting diode is connected to the lower driving thin film transistor and operates by receiving a signal. The organic light emitting diode display includes a plurality of sub-pixels and an organic light emitting diode capable of operating independently for each sub-pixel, and includes at least two thin film transistors including a driving thin film transistor connected to the organic light emitting diode, and at least one capacitor Pixel sub-pixel circuit section. In the embodiments, the thin film transistor represents a driving thin film transistor connected to the organic light emitting diode, and the switching thin film transistor is omitted since it is similar in shape to that shown in FIG.

Hereinafter, specific embodiments of the organic light emitting diode display of the present invention will be described.

2 is a cross-sectional view illustrating one sub-pixel of an OLED display according to a first embodiment of the present invention.

2, the organic light emitting diode display according to the first embodiment of the present invention includes a buffer layer 105 on a substrate 100 and an active layer 113 on a predetermined portion of the buffer layer 105 .

The active layer 113 includes an interlayer insulating layer 125 having a gate insulating layer 115 and a gate electrode layer 120 stacked on the active layer 113 and covering the gate electrode 120. The interlayer insulating layer 125, A contact hole exposing both ends of the active layer 113 is formed to form a source electrode 131 and a drain electrode 132 connected to the active layer 113 through the contact hole.

Here, the active layer 113, the gate electrode 120, the source electrode 131, and the drain electrode 132 are collectively referred to as a thin film transistor (TFT). In some cases, these electrodes or semiconductor layers as well as insulating films therebetween are collectively referred to as thin film transistors.

The inorganic protective layer 135 and the organic protective layer 137 are sequentially formed to cover the upper portion of the source electrode 131 and the drain electrode 132.

A first electrode (not shown) connected to the drain electrode 132 through the exposed portion is formed by selectively removing the organic passivation layer 137 and the inorganic passivation layer 135 to partially expose the upper portion of the drain electrode 132, 110).

A hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), and a light emitting layer (EML) are sequentially formed on the first electrode (110) And an electron transport layer (ETL) are sequentially formed, and then an electron injection layer 300 and a second electrode 310 are formed.

Here, the first electrode 110, the organic laminate 200, and the second electrode 310 function as an organic light emitting diode (OLED).

The thin film transistor and the organic light emitting diode are provided in a plurality of sub-pixels provided on the substrate 100, respectively. The sub-pixels are provided in the active region of the substrate 100, and the peripheral region surrounding the active region is provided with the pads of the thin film transistor array and the routing wiring connected to these and the active region. The thin film transistor array pad is located at one edge of the substrate 100 and is connected to a printed circuit board or a flexible printed circuit board (not shown).

An organic capping layer 400 is formed to protect the organic light emitting diode on the organic light emitting diode (OLED) and prevent moisture permeation. The organic capping layer 400 covers the entire area of the plurality of sub-pixels. That is, as shown in FIG. 1, it covers the entire active region, extends to a part of the outer periphery of the active region, and covers all the side portions of the organic light emitting diode in the active region.

Also, the first outgassing barrier layer 500 described above is provided on the organic capping layer 400. The metal included is a metal having a mono, di, or trivalent ionization tendency and is a metal having a work function lower than or equal to the work function of the second electrode 310. The metal includes an alkali metal, an alkaline earth metal and a lanthanum metal, (Barium), Ce (Cerium), Cs (Cesium), Eu (Europium), Gd (Gadolinium), K (Kalium), Li (Lithium), or the like. And may be any one of Lu (Luterium), Na (Natrium), Nd (Neodymium), Rb (Rubidium), Sc (Scandium), Sm (Samarium), Sr (Strontium), Yb .

The first outgas blocking layer 500 is formed to cover both the upper surface and the side surface of the organic capping layer 400.

Next, a thin film plug 600 is formed on the first outgassing barrier layer 500.

The thin film bag 600 may be formed by alternately stacking one or more pairs of the inorganic sealing films 610 and 630 and the organic sealing film 620. In the illustrated example, two inorganic sealing films and one organic sealing film are shown, but the present invention is not limited thereto, and combinations of two or more pairs are also possible. In this case, the thin film bag 600 has an inorganic sealing film closest to the first out gas generating blocking layer 500, and has an inorganic sealing film on the surface facing the barrier film 700. That is, it is preferable that the number of the inorganic sealing film and the organic sealing film is an odd number, and the innermost and outermost membrane sealing member 600 is an inorganic sealing film. This is to prevent the inorganic sealing film from primarily deflecting the moisture coming from the outside and to prevent the particles generated inside from escaping. The organic sealing film between the inorganic sealing films flattens the surface of the organic sealing film, and large particles such as particles entering from the outside act as a receptacle without falling outside the sealing member 600.

The thin film bag 600 also covers the top and side surfaces of the first out gas catching barrier layer 500 as shown in FIG.

Next, the barrier film 700 covers the top and side surfaces of the thin film bag 600 and is positioned at the outermost side. The barrier film 700 is a shape that sufficiently covers the substrate 100 and can cover the printed wiring board or the flexible printed circuit board connected to the pads of the thin film transistor array and the routing wiring located on the periphery of the substrate 100 have.

On the other hand, the outer peripheral region of the substrate 100 excluding the pads of the thin film transistor array may be covered with the insulating films 105, 125, and 135 formed when the thin film transistor is formed.

The organic light emitting display according to the first embodiment of the present invention may include the first outgas blocking layer 500 on the organic capping layer 400 on the second electrode 310, The outgas generated in at least one layer outside the first outgassing barrier layer 500 reacts with the metal contained in the first outgas blocking layer 500 in advance to cause the outgas to flow into the organic light emitting diode OLED, Can be prevented.

3 is a cross-sectional view illustrating one sub-pixel of an organic light emitting display according to a second embodiment of the present invention.

3 is different from the organic light emitting display according to the first embodiment of the present invention in that a second outgassing barrier layer 510 is further provided under the first electrode 110. [

Therefore, the first out gas generating barrier layer 500 blocking the outgas generated above the organic light emitting diode (OLED) is the same as that of the first embodiment described above, and thus its explanation is omitted.

In the organic light emitting diode OLED according to the second embodiment of the present invention, the second outpacing blocking layer 510 is formed by a thin film transistor (TFT) located below the first electrode 110 and insulating films therebetween To prevent outgassing. In this case, the second outgassing barrier layer 510 may be formed by evaporation or sputtering when the first electrode 110 is formed, and the second outgas blocking layer 510 may be formed by reacting with a halogen element and a non- I have. The second out gasblock layer 510 may be made of a single metal or may be a metal alloy and may also be a metal halide or metal oxide, have.

In this case, the metal contained in the second out gas generating barrier layer 510 is a metal having a monovalent, divalent or trivalent ionization tendency, and may be any one of an alkali metal, an alkaline earth metal, a lanthanum metal, The metal may be Ba (Barium), Ce (Cerium), Cs, Eu, Europium, Gadolinium, K, (Natrium), Nd (Neodymium), Rb (Rubidium), Sc (Scandium), Sm (Samarium), Sr (Strontium), Yb (Ytterbium) and Y (Yttrium). Outgas generated in the insulating films 150, 137, 135, 125, 105 and the like on the lower side of the second outgassing barrier layer 510 and outgas generated in the first outgassing barrier And reacts with the metal contained in the layer 510 so that the outgass does not pass through the first electrode 110. Thus, the outgas is prevented from affecting the organic light emitting diode (OLED).

Meanwhile, the thickness of the second outpacing gas barrier layer 510 may be 10 Å to 50 Å. The reason why the lower limit value is set to 10 angstroms is the minimum required thickness for reacting with the outgassing. The reason why the upper limit value is set to 50 angstroms is that when the second outgassing blocking layer 510 is provided in the organic light emitting display, So as not to lower the optical transmittance on the light-emitting side without lowering the injection efficiency.

Hereinafter, effects of the organic light emitting diode display of the present invention will be described with reference to experimental data.

In general, when UV is not irradiated, the contrast efficiency is obviously high. However, when the organic light emitting display is used, the environment in which the device is placed may be placed in an unstable but extreme environment. For example, the extreme sunlight or sunlight can be increased in a strong environment, and the organic light emitting display device should have durability. In particular, when strong sunlight is irradiated, deterioration of the organic light emitting diode in the organic light emitting display due to UV is serious, and the organic light emitting display of the present invention solves the problem.

In the following experiments, the efficiency, life span, and delta V (relative to the voltage applied to the driving thin film transistor and the first electrode of the first electrode, Voltage change).

In the meantime, the experiment of the embodiment of the present invention was carried out with the structure of FIG. 2 having only the first outgassing barrier layer, and the first outgassing barrier layer was formed using, for example, Yb (Ytterbium) 50 Å.

4 is a graph showing the voltage vs. current density characteristics of the organic light emitting display according to the embodiment of the present invention and after irradiation with UV for 80 hours.

As shown in FIG. 4, in the case of applying the embodiment of the present invention, it can be confirmed that the current density is higher for the same driving voltage when UV is irradiated for 80 hours, and higher than when the conventional UV is irradiated for 80 hours.

5 is a graph showing an efficiency change with time of an embodiment of the present invention and a conventional organic light emitting display after irradiation with UV for 80 hours.

As shown in FIG. 5, when the UV is irradiated for 80 hours, the time from the initial luminance to the luminance of 95% is almost similar to the case where the UV is not irradiated, and the lifetime is secured for about 150 hours . On the other hand, in the conventional structure, when the UV is irradiated for 80 hours, the time taken to fall to the luminance of 95% from the initial luminance is about 26 hours. In the case of applying the embodiment of the present invention, I can understand that there is.

FIG. 6 is a graph showing changes in? V according to an embodiment of the present invention and a conventional organic light emitting display device over time after irradiation with UV for 80 hours.

On the other hand, the voltage change (Delta V) at the connection node between the first electrodes of the driving thin film transistor should be a low value so that the driving thin film transistor is stable without change or deterioration during driving. In the conventional structure, the voltage change (Delta V =? V) of the connection node between the first electrodes of the driving thin film transistor changes by 0.5 V or more within about 15 hours with the elapse of time when UV is irradiated for 80 hours, It can be confirmed that the reliability of the device is poor in the conventional structure.

In contrast, according to the embodiment of the present invention, the voltage change (Delta V) of the connection node between the first electrodes of the driving thin film transistor according to the embodiment of the present invention is superior even when the UV is applied for 80 hours, Is about 0.1 V at the elapse of 100 hours, which means that the reliability of the device when the first out gas can-barrier layer is provided is remarkably improved, and reliability is secured against UV irradiation.

In the meantime, the above-described experiment is based on an experiment using only the first outgassing barrier layer. If the second outgassing barrier layer is provided, it is expected that the current density efficiency is higher than that of the first outgassing barrier layer .

That is, the organic light emitting diode display of the present invention has an outgassing barrier layer on the organic capping layer covering the organic light emitting diode, and the outgas generated from the outside of the organic light emitting diode reacts with the metal included in the outgassing barrier layer , It is possible to prevent the organic light emitting diode from being deteriorated by the outgas.

In addition, an outgassing barrier layer may be provided under the organic light emitting diode to prevent the outgas generated from the thin film transistor array on the lower side of the organic light emitting diode from deteriorating the organic light emitting diode.

By the provision of the outgassing barrier layer, time passes by ultraviolet rays. Outgas emitted from the organic capping layer, the thin film bag and the barrier film outside the organic light emitting diode remain in the outgas barrier layer, It is possible to maintain the lifetime and the reliability of the driving voltage even in an environment which is badly conditioned by high temperature and sunlight.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Will be apparent to those of ordinary skill in the art.

100: substrate 110: first electrode
200: organic laminate 300: electron injection layer
310: second electrode 400: organic capping layer
500: first out gang prevention layer 510: second out gang prevention layer
600: Thin-film plugs 610, 630:
620: organic sealing film 700: barrier film

Claims (16)

An organic light emitting diode including a first electrode and a second electrode facing each other on a substrate and an organic light emitting layer disposed between the first and second electrodes;
An organic capping layer on the second electrode;
A first outgassing barrier layer covering the organic capping layer; And
And a plug covering the first outgassing barrier layer. The method according to claim 1,
Wherein the first outgassing barrier layer comprises a metal having reactivity with a halogen element and a nonmetal, and having a work function less than a work function of the second electrode. 3. The method of claim 2,
Wherein the metal forming the first outgassing barrier layer is a metal having a monovalent, divalent or trivalent ionization tendency. The method of claim 3,
The metal is selected from the group consisting of Ba (Barium), Ce (Cerium), Cs (Cesium), Eu (Europium), Gd (Gadolinium), K (Kalium), Li (Lithium), Lu (Luterium) Neodymium), Rb (Rubidium), Sc (Scandium), Sm (Samarium), Sr (Strontium), Yb (Ytterbium) and Y (Yttrium). The method according to claim 1,
Wherein the thickness of the first outgassing barrier layer is in the range of 10 to 50 Angstroms. The method according to claim 1,
And a barrier film opposed to the surface of the plug that is not opposed to the first outgassing barrier layer and facing the substrate on the periphery of the organic light emitting diode. The method according to claim 1,
Wherein the first outgas blocking layer reacts with the outgass coming from the barrier film, the plug, and the organic capping layer. The method according to claim 1,
Wherein the bag body comprises a thin film stacked body formed by alternately stacking one or more pairs of an inorganic sealing film and an organic sealing film. The method according to claim 1,
Wherein the organic capping layer covers an upper surface and a side surface of the organic light emitting diode. The method according to claim 1,
A thin film transistor electrically connected to the first electrode, and a protective film disposed between the thin film transistor and the first electrode, below the first electrode. 11. The method of claim 10,
Further comprising a second outgassing barrier layer between the protective film and the first electrode, the second outgassing barrier layer being in contact with the first electrode. 12. The method of claim 11,
And the second outgassing blocking layer reacts with the outgas generated by the thin film transistor and the protective film. 12. The method of claim 11,
Wherein at least one of the first outgas blocking layer and the second outgassing blocking layer is made of a metal having reactivity with a halogen element and a nonmetal and having a work function less than the work function of the second electrode. 14. The method of claim 13,
Wherein the metal forming at least one of the first outgassing blocking layer and the second outgassing blocking layer is a metal having a monovalent, divalent or trivalent ionization tendency. 15. The method of claim 14,
Wherein the thickness of the first outgassing blocking layer and the thickness of the second outgassing blocking layer is 10 to 50 Å. The method according to claim 1,
Wherein the substrate has an active region including a plurality of sub-pixels and a dead region around the active region,
Wherein the organic light emitting diode is provided for each sub-pixel.

Images