KR101746677B1 - Flexible organic light emitting diode - Google Patents

Abstract

The present invention relates to an organic electroluminescent device, and more particularly, to a flexible organic electroluminescent device for preventing penetration of moisture and oxygen from the outside.
A characteristic feature of the present invention is that a flexible substrate of a flexible organic electroluminescent device is formed to have a side surface or a partition wall is formed and a barrier layer formed by alternately stacking an inorganic film and an organic film in a storage region defined by the flexible substrate is positioned .
Oxygen and moisture can not permeate into the inside of the electrode layer, thereby preventing oxidization and corrosion of the electrode layer, preventing current leakage and short-circuit, and preventing pixel defects and life span reduction.
In addition, it is possible to prevent the problem that the bevel region of the flexible organic electroluminescent device increases due to the barrier layer, and it is possible to provide a flexible organic electroluminescent device having a narrow bezel.

Description

[0001] The present invention relates to a flexible organic light emitting diode

The present invention relates to an organic electroluminescent device, and more particularly, to a flexible organic electroluminescent device for preventing penetration of moisture and oxygen from the outside.

Until recently, CRT (cathode ray tube) was mainly used as a display device. However, in recent years, flat panel displays such as a plasma display panel (PDP), a liquid crystal display device (LCD), and an organic light emitting diode (OLED) Devices have been widely studied and used.

Of the above flat panel display devices, an organic electroluminescent element (hereinafter referred to as OLED) is a self-luminous element and can be lightweight and thin because it does not require a backlight used in a liquid crystal display device which is a non-light emitting element.

In addition, it has a better viewing angle and contrast ratio than liquid crystal display devices, is advantageous in terms of power consumption, can be driven by DC low voltage, has a fast response speed, is resistant to external impacts due to its solid internal components, It has advantages.

Particularly, since the manufacturing process is simple, it is advantageous in that the production cost can be saved more than the conventional liquid crystal display device.

In recent years, flexible OLEDs, which are manufactured using a flexible material such as a flexible glass substrate or plastic and are capable of maintaining display performance even when bent like paper, are rapidly emerging as a next generation flat panel display.

Such a flexible OLED is a self-luminous element that emits light through an organic electroluminescent diode, and the organic electroluminescent diode emits light through organic electroluminescent phenomenon.

On the other hand, the substrate of the flexible OLED is lightweight, has excellent impact resistance and low cost, and has a disadvantage that external moisture or oxygen easily penetrates.

When oxygen or moisture flows into the flexible OLED, oxidation and corrosion of the electrode layer occur due to electroluminescence. In such a case, the risk of current leakage and short-circuiting increases and pixel defects occur. There is a problem that the life is shortened.

Recently, such a flexible OLED has been widely used as a portable computer, a desktop computer monitor, and a wall-mounted television, and researches that have a large display area and a significantly reduced weight and volume have been actively conducted It is progressing.

Therefore, it is required to make the bezel region of the outer edge, which is the non-light emitting region excluding the effective light emitting region in which the image is displayed, as small as possible.

SUMMARY OF THE INVENTION It is a first object of the present invention to provide a flexible organic electroluminescent device in which oxygen and moisture can not permeate into the inside.

It is a third object of the present invention to prevent oxidization and corrosion of the electrode layer and to prevent current leakage and short circuit from occurring. It is a third object of the present invention to prevent the occurrence of pixel defects and life span reduction.

A fourth object of the present invention is to provide a flexible OLED having a narrow bezel.

In order to achieve the above-mentioned object, the present invention provides a semiconductor device comprising: a substrate having a bottom surface and four sides of the bottom surface bent upwardly to define a receiving area therein; A lower encapsulation layer formed by alternately laminating at least one organic film and at least one inorganic film in the accommodating area; A driving thin film transistor formed on the lower sealing layer and an organic light emitting diode disposed on the lower sealing layer and connected to the driving thin film transistor; And an upper encapsulation layer covering the driving thin film transistor and the organic light emitting diode.

The present invention also relates to a semiconductor device comprising: a substrate; A partition wall formed around the four edges of the substrate; A lower encapsulation layer formed by alternately stacking at least one organic film and at least one inorganic film in the partition wall; A driving thin film transistor and an organic light emitting diode formed on the lower sealing layer; And an upper encapsulation layer covering the driving thin film transistor and the organic light emitting diode.

Here, the inorganic film has a structure surrounding the organic film, and the inorganic film is formed along the bottom surface of the substrate and the side surface of the substrate or the inside surface of the partition wall, and the organic film is formed on the inorganic film As shown in FIG.

The organic film is formed on the inorganic film corresponding to the bottom surface of the substrate, and the inorganic film is composed of the first to fourth inorganic films, Wherein the first inorganic film is formed along the bottom surface and the inner side surface of the side surface of the substrate and the first organic film is surrounded by the first inorganic film at the side surface and the bottom surface, Wherein the second inorganic film is formed along an upper surface of the first organic film and an inner surface of a side surface of the substrate and the second organic film is surrounded by the second inorganic film at the side surface and the lower surface, 3 inorganic film is formed along the upper surface of the second organic film and the inner side surface of the side surface of the substrate, the third organic film is surrounded by the third inorganic film on the side surface and the lower surface, And the fourth inorganic film is positioned on the organic film and the third inorganic film.

The inorganic film is composed of first to fourth inorganic films, and the organic film is composed of first to third organic films, and the first inorganic film is formed on the substrate, Wherein the second inorganic film is formed along the upper surface of the first organic film and the inner surface of the partition wall by the first inorganic film and the side surface is surrounded by the lower surface and the partition wall, The third inorganic film is formed along the upper surface of the second organic film and the inner surface of the partition wall by the second inorganic film and the third organic film is formed by the third inorganic film, And the fourth inorganic film is positioned on the third organic film and the third inorganic film.

In addition, the first to fourth inorganic films are formed on the upper side of the substrate, the third inorganic film formed on the side surface of the substrate and the third organic film are flush with each other, The inorganic film is formed on the partition wall, and the third inorganic film and the third organic film formed on the partition wall are flush with each other.

The inorganic film may be formed of one selected from the group consisting of a silicon oxide film (SiO2), silicon nitride (SixNy), silicon oxynitride film (SiON), aluminum oxide (AlOx), aluminum nitride (AlO), TIO and ZnO, Acrylate monomer, phenylacetylene, diamine and dianhydride, siloxane, silane, parylene, olefin-based polymer (polyethylene, polypropylene) , Polyethylene terephthalate (PET), fluororesin, polysiloxane, and the substrate is made of one selected from a flexible glass substrate or plastic.

The driving TFT includes a semiconductor layer, a gate electrode, a source electrode and a drain electrode. The organic electroluminescent diode includes a first electrode connected to the driving thin film transistor, an organic light emitting layer, and a second electrode.

As described above, according to the present invention, a flexible substrate of a flexible organic electroluminescent device is formed with a side surface or a barrier wall, and a barrier layer formed by alternately stacking an inorganic film and an organic film in a storage region defined therethrough The oxygen and moisture can not permeate into the inside of the electrode layer, thereby preventing oxidization and corrosion of the electrode layer and preventing current leakage and short-circuiting. In addition, It is possible to prevent defects and a reduction in life span.

In addition, it is possible to prevent a problem that the area of the bezel of the flexible organic electroluminescent device increases due to the barrier layer, and it is possible to provide a flexible organic electroluminescent device having a narrow bezel.

1 is a cross-sectional view schematically showing a flexible OLED according to an embodiment of the present invention;
FIG. 2 is an enlarged cross-sectional view of the edge of the barrier film of FIG. 1; FIG.
3 is a cross-sectional view schematically showing a flexible OLED according to a first embodiment of the present invention.
Fig. 4 is an enlarged cross-sectional view of a portion of Fig. 3; Fig.
5 is a cross-sectional view schematically showing a flexible OLED according to a second embodiment of the present invention;

Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings.

1 is a cross-sectional view schematically showing a flexible OLED according to an embodiment of the present invention.

Meanwhile, the OLED 100 is divided into a top emission type and a bottom emission type according to a transmission direction of emitted light. Hereinafter, an upper emission type will be described as an example of the present invention.

As shown in the drawing, the flexible OLED 100 includes a substrate 101 on which a driving thin film transistor DTr and an organic light emitting diode E are formed.

A switching thin film transistor (not shown), a driving thin film transistor DTr, and a storage capacitor (not shown) are formed on the substrate 101 in each pixel region P A first electrode 111 connected to each of the driving TFTs DTr and an organic light emitting layer 113 disposed above the first electrode 111 to emit light of a specific color, And an organic electroluminescent diode E composed of the second electrode 115 located on the upper side is formed.

At this time, the first electrode 111 is made of a material having a relatively high work function value, and the first electrode 111 is formed for each pixel region P.

A hole injection layer, a hole transport layer, an emitting material layer, an electron transport layer, and a hole transport layer may be formed on the organic light emitting layer 113 to enhance the light emitting efficiency. An electron transport layer, and an electron injection layer.

In general, the organic light emitting layer 113 displays red (R), green (G), and blue (B) colors. (B) a separate organic material emitting a color is used in a pattern.

The second electrode 115 is a two-layer structure in which a transparent conductive material is thickly deposited on a semitransparent metal film on which a low-work function metal material is thinly deposited.

Therefore, the light emitted from the organic light emitting layer 113 is driven by the upper light emitting method, which is emitted toward the second electrode 115.

When a predetermined voltage is applied to the first electrode 111 and the second electrode 115 in accordance with a selected color signal, the flexible OLED 100 can display the holes injected from the first electrode 111 and the second electrode 115, The excitons are transported to the organic light emitting layer 113 to form excitons. When the excitons are transited from the excited state to the ground state, light is emitted and emitted in the form of visible light.

At this time, the emitted light passes through the transparent second electrode 115 and exits to the outside, so that the flexible OLED 100 realizes an arbitrary image.

A protective film 130 in the form of a thin thin film is formed on the driving thin film transistor DTr and the organic light emitting diode E. The flexible OLED 100 of the present invention includes a protective film 130 ). ≪ / RTI >

At least two inorganic protective films 130a and 130c are laminated on the protective film 130 to prevent external oxygen and moisture from penetrating into the flexible OLED 100. At this time, 130a, and 130c, an organic protective film 130b for protecting the impact resistance of the inorganic protective films 130a and 130c may be interposed.

Meanwhile, the flexible OLED 100 according to the present invention has a flexible characteristic, and the substrate 101 is composed of a flexible glass substrate or plastic having flexible characteristics so that display performance can be maintained even when bent like paper. The substrate 101 has a disadvantage that external moisture or oxygen can easily permeate.

The flexible OLED 100 prevents external oxygen and moisture from penetrating through the protective film 130 and allows external oxygen and moisture to penetrate into the flexible OLED 100 through the substrate 101. [

When oxygen or moisture flows into the flexible OLED 100 through the substrate 101, the electrode layer is oxidized and corroded due to electroluminescence. In this case, the risk of current leakage and short circuit is increased, There is a problem that the life of the display device itself is deteriorated.

The flexible OLED 100 further includes a barrier layer 140 as a lower sealing layer between the substrate 101 and the driving thin film transistor DTr and the organic electroluminescent diode E, The layer 140 is composed of a plurality of layers in which at least one layer of the inorganic insulating material 110a, 110b, 110c, and 110d and at least one layer of the organic insulating material 120a, 120b, and 120c are alternately stacked.

That is, the barrier layer 140 of the flexible OLED 100 of the present invention includes at least first to fourth inorganic barrier layers 110a, 110b, 110c, and 110d and first to third organic barrier layers 120a, 120b, and 120c ).

At this time, the first to fourth inorganic barrier layers 110a, 110b, 110c, and 110d function to prevent penetration of oxygen and moisture, and the first to third organic barrier layers 120a, 120b, And the fourth inorganic barrier layer 110a, 110b, 110c, and 110d.

In the structure in which the organic barrier layers 120a, 120b and 120c and the inorganic barrier layers 110a, 110b, 110c and 110d are alternately laminated repeatedly, moisture and oxygen It is preferable that the inorganic barrier layers 110a, 110b, 110c, and 110d completely surround the organic barrier layers 120a, 120b, and 120c.

Therefore, the flexible OLED 100 according to the embodiment of the present invention can prevent the substrate 101 from being leaked from the outside through the barrier layer 140, even though the substrate 101 is made of a flexible glass substrate or plastic, It is possible to prevent moisture and oxygen from penetrating into the flexible OLED 100.

Accordingly, oxidation and corrosion of the electrode layer can be prevented from occurring due to oxygen or moisture introduced into the organic light emitting layer (113 in FIG. 1), and the organic light emitting layer Can be prevented from being shortened.

Further, it is possible to prevent current leakage and short circuit from occurring, and it is possible to prevent a pixel defect from occurring. Thereby preventing the problem of unevenness in luminance and image characteristics.

2, when the edge of the barrier film 140 formed on the substrate 101 is enlarged, the second inorganic barrier layer 110b, which is formed to completely cover the first organic barrier layer 120a, The step coverage characteristic is poor and the second inorganic barrier layer 110b is formed along the step of the first organic barrier layer 120a.

Accordingly, the flatness of the second inorganic barrier layer 110b corresponding to the end of the first organic barrier layer 120a is poor, and the second organic barrier layer 120b is formed on the second inorganic barrier layer 110b It is preferable that the second organic barrier layer 120b is formed to be recessed toward the inside of the second inorganic barrier layer 110b as compared with the first organic barrier layer 120a.

At this time, the second organic barrier layer 120b is formed by being recessed inward by a region of at least A 'from the end of the first organic barrier layer 120a due to poor step coverage of the second inorganic barrier layer 110b And the third inorganic barrier layer 110c formed on the second organic barrier layer 120b may be formed on the second organic barrier layer 120b in a similar manner to the second organic barrier layer 120b, Is formed so as to be recessed inwardly from the end of the first electrode 120b by an area of A '.

However, such a configuration causes a problem of increasing the bezel area A of the flexible OLED 100. [

- First Embodiment -

FIG. 3 is a cross-sectional view schematically showing a flexible OLED according to a first embodiment of the present invention, and FIG. 4 is an enlarged cross-sectional view of part of FIG.

In the first embodiment of the present invention, the top emission type will be described as an example.

The flexible OLED 100 according to the first embodiment of the present invention has a structure in which the substrate 101 on which the driving thin film transistor DTr and the organic light emitting diode E are formed is encapsulated by the protective film 130, Encapsulation.

In detail, a barrier layer 140 is formed on the substrate 101 to prevent moisture and oxygen from penetrating into the flexible OLED 100.

At this time, the flexible OLED 100 according to the first embodiment of the present invention can solve the problem of increased bezel area (A in FIG. 2) due to the barrier layer 140. Let me take a closer look at this later.

A semiconductor layer 201 is formed on the pixel region P on the barrier layer 140. The semiconductor layer 201 is made of silicon and has a central portion formed on both sides of the active region 201a and the active region 201a And source and drain regions 201b and 201c doped with a high concentration of impurities.

A gate insulating layer 203 is formed on the semiconductor layer 201.

A gate electrode 205 corresponding to the semiconductor layer 201a and a gate wiring extending in one direction although not shown in the figure are formed on the gate insulating film 203.

A first interlayer insulating film 207a and a gate insulating film 203 under the first interlayer insulating film 207a are formed on the entire upper surface of the gate electrode 205 and the gate wiring (not shown) And first and second semiconductor layer contact holes 209a and 209b that respectively expose the source and drain regions 201b and 201c on both sides.

Next, upper portions of the first interlayer insulating film 207a including the first and second semiconductor layer contact holes 209a and 209b are separated from each other by the source and the drain, which are exposed through the first and second semiconductor layer contact holes 209a and 209b, And source and drain electrodes 211 and 213 which are in contact with the drain regions 201b and 201c, respectively.

And a drain contact hole 215 exposing the drain electrode 213 over the first interlayer insulating film 207a exposed between the source and drain electrodes 211 and 213 and the two electrodes 211 and 213. [ An insulating film 207b is formed.

At this time, the semiconductor layer 201 including the source and drain electrodes 211 and 213 and the source and drain regions 201b and 201c in contact with the electrodes 211 and 213 and the gate insulating film 201 formed on the semiconductor layer 201 The gate electrode 203 and the gate electrode 205 constitute a driving thin film transistor DTr.

On the other hand, although not shown in the drawing, data lines (not shown) are formed which cross the gate wiring (not shown) and define the pixel region P. The switching thin film transistor (not shown) has the same structure as the driving thin film transistor DTr and is connected to the driving thin film transistor DTr.

In the drawing, the switching thin film transistor (not shown) and the driving thin film transistor DTr are shown as a top gate type in which the semiconductor layer 201 is formed of a polysilicon semiconductor layer. As a variation thereof, It may be formed as a bottom gate type of impurity amorphous silicon.

A portion of the second interlayer insulating film 207b, which is connected to the drain electrode 213 of the driving thin film transistor DTr and substantially displays an image, is formed of a material having relatively high work function, for example, A first electrode 111 constituting an anode is formed as one constituent element of the electrode structure E.

The first electrode 111 is formed for each pixel region P and a bank 221 is located between the first electrodes 111 formed for each pixel region P. [

That is, the first electrodes 111 are formed in a structure in which the banks 221 are divided into the pixel regions P with the boundary portions of the respective pixel regions P being separated.

An organic light emitting layer 113 is formed on the first electrode 111.

Here, the organic light emitting layer 115 may be a single layer made of a light emitting material. In order to increase the light emitting efficiency, a hole injection layer, a hole transport layer, an emitting material layer, An electron transport layer, and an electron injection layer.

In general, the organic light emitting layer 113 displays red (R), green (G), and blue (B) colors. (B) a separate organic material emitting a color is used in a pattern.

A second electrode 115, which forms a cathode, is formed on the entire surface of the organic light emitting layer 113.

At this time, the second electrode 115 is a two-layer structure in which a transparent conductive material is deposited thickly on a semitransparent metal film thinly deposited with a low work function metal material.

Therefore, the light emitted from the organic light emitting layer 113 is driven by the upper light emitting method, which is emitted toward the second electrode 115.

When a predetermined voltage is applied to the first electrode 111 and the second electrode 115 in accordance with a selected color signal, the flexible OLED 100 can display the holes injected from the first electrode 111 and the second electrode 115, The excitons are transported to the organic light emitting layer 113 to form excitons. When the excitons are transited from the excited state to the ground state, light is emitted and emitted in the form of visible light.

At this time, the emitted light passes through the transparent second electrode 115 and exits to the outside, so that the flexible OLED 100 realizes an arbitrary image.

A protective film 130 in the form of a thin thin film is formed on the driving thin film transistor DTr and the organic light emitting diode E. The flexible OLED 100 according to the first embodiment of the present invention includes a protective film 130, (Not shown).

At least two inorganic protective films 130a and 130c are laminated on the protective film 130 to prevent external oxygen and moisture from penetrating into the flexible OLED 100. At this time, 130a, and 130c, the organic protective film 130b is interposed. The reason for this is that the inorganic protective films 130a and 130c are suitable for preventing penetration of oxygen and moisture and the organic protective film 130b is for protecting the impact resistance of the inorganic protective films 130a and 130c .

Accordingly, the flexible OLED 100 according to the first embodiment of the present invention can encapsulate through the protective film 130, so that the OLED 100 can be formed to have a thin thickness compared with the case where encapsulation is performed with glass , The overall thickness of the OLED 100 can be reduced.

In addition, the OLED 100 has a flexible characteristic, so that it can realize a flexible OLED capable of maintaining the display performance as it is bent like paper.

Here, the substrate 101 is made of a flexible glass substrate or a plastic material having flexible characteristics so that the flexible OLED 100 can maintain the display performance even if the flexible OLED 100 is bent like a paper. At this time, And the bottom surface 101a and the side surface 101b are defined so as to define the receiving area C inside.

Therefore, the flexible OLED 100 of the present invention prevents moisture and oxygen from penetrating into the flexible OLED 100 into the storage area C defined by the bottom surface 101a and the side surface 101b of the substrate 101 A barrier layer 140 is formed.

Accordingly, the bezel region of the flexible OLED 100 is prevented from being widened by the barrier layer 140 formed in a multilayer structure.

The substrate 101 made of a flexible glass substrate or a plastic material has a disadvantage in that external moisture or oxygen can easily permeate and external oxygen and moisture are introduced into the flexible OLED 100 ).

When oxygen and moisture are introduced into the flexible OLED 100 as described above, the electrode layer is oxidized and corroded due to electroluminescence. In such a case, the risk of current leakage and short circuit is increased and a pixel defect occurs There is a problem that the lifetime of the display device itself is lowered.

 A barrier layer 140 may be formed between the substrate 101 and the organic electroluminescent diode E to prevent oxygen and moisture from flowing into the organic electroluminescent diode E through the barrier layer 140, As shown in Fig.

At this time, the barrier layer 140 is preferably composed of a plurality of layers in which at least one layer of the inorganic insulating materials 110a, 110b, 110c, and 110d and at least one layer of the organic insulating materials 120a, 120b, and 120c are alternately stacked The flexible OLED 100 according to the first embodiment of the present invention has a structure in which the barrier layer 140 includes the first to fourth inorganic barrier layers 110a, 110b, 110c and 110d and the first to third organic barrier layers 120a , 120b and 120c.

Here, the first to fourth inorganic barrier layers 110a, 110b, 110c, and 110d serve to prevent penetration of oxygen and moisture, and the first to third organic barrier layers 120a, 120b, And the fourth inorganic barrier layer 110a, 110b, 110c, and 110d.

The first to fourth inorganic barrier layers 110a, 110b, 110c and 110d may be formed of a material selected from the group consisting of silicon oxide (SiO2), silicon nitride (SixNy), silicon oxynitride (SiON), aluminum oxide (AlOx) TIO and ZnO. The first to third organic barrier layers 120a, 120b and 120c may be a monomer or a polymer thin film. Examples of the monomer include an acrylate monomer, a phenylacetylene phenylacetylene, diamine and dianhydride, siloxane, silane, parylene and the like can be used.

As the polymer thin film, an olefin-based polymer (polyethylene, polypropylene), polyethylene terephthalate (PET), fluororesin, polysiloxane, or the like can be used.

Therefore, the flexible OLED 100 according to the first embodiment of the present invention can prevent the substrate 101 from being damaged by the barrier layer 140 even though the substrate 101 is made of a flexible glass substrate or plastic, Thereby preventing moisture and oxygen from penetrating into the flexible OLED 100 from the outside.

Accordingly, oxidation and corrosion of the electrode layer can be prevented from occurring due to oxygen or water flowing into the flexible OLED 100, and the emission characteristics of the organic light emitting layer (113 in FIG. 1) (113 in FIG. 1) is shortened.

Further, it is possible to prevent current leakage and short circuit from occurring, and it is possible to prevent a pixel defect from occurring. Thereby preventing the problem of unevenness in luminance and image characteristics.

At this time, in the structure in which the organic barrier layers 120a, 120b, and 120c and the inorganic barrier layers 110a, 110b, 110c, and 110d are alternately laminated repeatedly, It is preferable that the inorganic barrier layers 110a, 110b, 110c, and 110d completely surround the organic barrier layers 120a, 120b, and 120c because oxygen must be prevented from permeating.

The barrier layer 140 is formed on the bottom surface 101a and the side surface 101b of the substrate 101 so that the first inorganic barrier layer 110a is formed on the bottom surface 101a of the substrate 101, A first organic barrier layer 120a is formed on the first inorganic barrier layer 110a and a second inorganic barrier layer 110b is formed on the first inorganic barrier layer 110a along the inner surface of the substrate 101. [ So that the side surface and the bottom surface are enclosed.

That is, the first inorganic barrier layer 110a is formed in the form of a storage area C defined by the bottom surface 101a and the side surface 101b of the substrate 101 and is formed as a side surface and a bottom surface to define a storage area And the first organic barrier layer 120a is formed on the bottom surface and the side surface of the first organic barrier layer 120a in a storage area of the first inorganic barrier layer 110a.

A second inorganic barrier layer 110b is formed on the first inorganic barrier layer 110a formed on the upper portion of the first organic barrier layer 120a and the inner side surface 101b of the substrate 101, And a second organic barrier layer 120b is formed on the second inorganic barrier layer 110b.

At this time, the second organic barrier layer 120b is also formed in a structure in which the side surface and the bottom surface are surrounded by the second inorganic barrier layer 110b.

The third inorganic barrier layer 110c is formed on the second inorganic barrier layer 120b and the second inorganic barrier layer 110b formed on the inner side of the side surface 101b of the substrate 101, The third organic barrier layer 120c is formed on the upper surface of the third inorganic barrier layer 110c such that the side surfaces and the bottom surface are surrounded by the third inorganic barrier layer 110c.

At this time, the first to third inorganic barrier layers 110a, 110b and 110c are also formed on the upper surface of the side 101b of the substrate 101. At this time, the third organic barrier layer 120c and the side surfaces of the substrate 101 It is preferable that the third inorganic barrier layer 110c formed on the third inorganic barrier layer 110b and the third inorganic barrier layer 110c formed on the third inorganic barrier layer 110b are formed in the same plane. (110d) is further formed.

The driving thin film transistor DTr and the organic light emitting diode E of the flexible OLED 100 are formed on the fourth inorganic barrier layer 110d.

It can be seen that the bezel region B of the flexible OLED 100 according to the first embodiment of the present invention is narrower than the bezel region A of the first flexible OLED 100 shown in FIG.

In detail, the barrier layer 140 is formed by alternately repeating the inorganic barrier layers 110a, 110b, 110c and 110d and the organic barrier layers 120a, 120b and 120c on the flat substrate 101 The organic barrier layers 120a, 120b, and 120c formed on the inorganic barrier layers 110a, 110b, 110c, and 110d are formed on the inorganic barrier layers 110a, 110b, 110c, In order to be formed on the inorganic barrier layers 110a, 110b, 110c, and 110d having a good flatness, the inorganic barrier layers 120a, 120b, As shown in FIG.

Therefore, the driving TFT DTr and the organic light emitting diode E formed on the barrier layer 140 are further recessed inwardly from the edge of the substrate 101, so that the effective light emission The inorganic barrier layers 110a, 110b, 110c, and 110d and the organic barrier layers 120a, 120b, and 120c are formed by being recessed inward from the edge of the substrate 101 A bezel region (A in Fig. 2) which is a non-emission region forming a step is increased.

On the other hand, the flexible OLED 100 according to the first embodiment of the present invention includes inorganic barrier layers 110a, 110b, 110c, and 110d in a storage region C including a bottom surface 101a and a side surface 101b of the substrate 101, The inorganic barrier layers 110a, 110b, 110c, and 110d formed on the organic barrier layers 120a, 120b, and 120c are stacked alternately and repeatedly with the organic barrier layers 120a, 120b, The organic barrier layers 120a, 120b and 120c formed on the inorganic barrier layers 110a, 110b, 110c and 110d are not formed along the step of the organic barrier layers 120a, 120b and 120c, It is not necessary to be formed by being recessed inwardly from the end of the organic barrier layers 120a, 120b, and 120c located in the region A 'shown in FIG.

Accordingly, the bezel region B of the flexible OLED 100 according to the first embodiment of the present invention can be formed narrower than the bezel region A of FIG. 1 and the second flexible OLED 100.

In the first embodiment of the present invention, the first to fourth inorganic barrier layers 110a, 110b, 110c and 110d and the first to third organic barrier layers 120a, 120b and 120c are alternately repeatedly laminated, The barrier layer 140 may include at least one organic barrier layer 120a, 120b and 120c and at least one inorganic barrier layer 110a, 110b, 110c, and 110d ) Can be alternately laminated and formed.

It should be noted that the first to fourth inorganic barrier layers 110a, 110b, 110c and 110d are also formed on the upper surface of the substrate 101 side surface in the drawings and the description so far, And the first to third organic barrier layers 120a and 120b may be formed so that the side surfaces 101b of the substrate 101 are formed with the first to fourth inorganic barrier layers 110a, 110b, 110c, and 110d and the first to third organic barrier layers 120a and 120b , And 120c.

- Second Embodiment -

5 is a cross-sectional view schematically showing a flexible OLED according to a second embodiment of the present invention.

In order to avoid redundant explanations, the same parts as those of the first embodiment described above are denoted by the same reference numerals, and only the characteristic contents described above in the second embodiment will be described.

As shown, the flexible OLED 100 according to the second embodiment of the present invention has a structure in which the substrate 101 on which the driving thin film transistor DTr and the organic light emitting diode E are formed is encapsulated by the protective film 130, Encapsulation.

At this time, a barrier layer 140 is formed on the substrate 101 to prevent moisture and oxygen from penetrating into the flexible OLED 100. The edge of the barrier layer 140 is sealed by the barrier 150, do.

The substrate 101 made of a flexible glass substrate or a plastic material has a disadvantage in that external moisture or oxygen can easily permeate and external oxygen and moisture are introduced into the flexible OLED 100 ).

When oxygen and moisture are introduced into the flexible OLED 100 as described above, the electrode layer is oxidized and corroded due to electroluminescence. In such a case, the risk of current leakage and short circuit is increased and a pixel defect occurs There is a problem that the lifetime of the display device itself is lowered.

 A barrier layer 140 may be formed between the substrate 101 and the organic electroluminescent diode E to prevent oxygen and moisture from flowing into the organic electroluminescent diode E through the barrier layer 140, As shown in Fig.

At this time, the barrier layer 140 is preferably composed of a plurality of layers in which at least one layer of the inorganic insulating materials 110a, 110b, 110c, and 110d and at least one layer of the organic insulating materials 120a, 120b, and 120c are alternately stacked The flexible OLED 100 according to the second embodiment of the present invention has a structure in which the barrier layer 140 includes the first to fourth inorganic barrier layers 110a, 110b, 110c and 110d and the first to third organic barrier layers 120a , 120b and 120c.

Here, the first to fourth inorganic barrier layers 110a, 110b, 110c, and 110d serve to prevent penetration of oxygen and moisture, and the first to third organic barrier layers 120a, 120b, And the fourth inorganic barrier layer 110a, 110b, 110c, and 110d.

The first to fourth inorganic barrier layers 110a, 110b, 110c and 110d may be formed of silicon oxide (SiO2), silicon nitride (SixNy), silicon oxynitride (SiON), aluminum oxide (AlOx) TIO and ZnO. The first to third organic barrier layers 120a, 120b and 120c may be a monomer or a polymer thin film. Examples of the monomer include an acrylate monomer, a phenylacetylene phenylacetylene, diamine and dianhydride, siloxane, silane, parylene and the like can be used.

As the polymer thin film, an olefin-based polymer (polyethylene, polypropylene), polyethylene terephthalate (PET), fluororesin, polysiloxane, or the like can be used.

Therefore, the flexible OLED 100 according to the second embodiment of the present invention can prevent the substrate 101 from being deformed by the barrier layer 140 even though the substrate 101 is made of a flexible glass substrate or plastic, Thereby preventing moisture and oxygen from penetrating into the flexible OLED 100 from the outside.

Accordingly, oxidation and corrosion of the electrode layer can be prevented from occurring due to oxygen or water flowing into the flexible OLED 100, and the emission characteristics of the organic light emitting layer (113 in FIG. 1) (113 in FIG. 1) is shortened.

Further, it is possible to prevent current leakage and short circuit from occurring, and it is possible to prevent a pixel defect from occurring. Thereby preventing the problem of unevenness in luminance and image characteristics.

At this time, in the structure in which the organic barrier layers 120a, 120b, and 120c and the inorganic barrier layers 110a, 110b, 110c, and 110d are alternately laminated repeatedly, It is preferable that the inorganic barrier layers 110a, 110b, 110c, and 110d completely surround the organic barrier layers 120a, 120b, and 120c because oxygen must be prevented from permeating.

In particular, the flexible OLED 100 according to the second embodiment of the present invention encapsulates the edges of the barrier layer 140 through the barrier ribs 150 to more reliably prevent the infiltration of moisture and oxygen from the outside, The barrier layer 140 prevents the bezel region B 'of the flexible OLED 100 from being widened.

That is, the first inorganic barrier layer 110a is formed on the substrate 101 and the barrier rib 150 is formed on the first inorganic barrier layer 110a with the edge of the substrate 101 therebetween.

Therefore, the storage region D of the barrier layer 140 by the barrier ribs 150 is defined on the substrate 101. [

The first organic barrier layer 120a is formed on the first inorganic barrier layer 110a in the partition wall 150 on the substrate 101. The lower surface of the first organic barrier layer 120a is formed by a first inorganic barrier layer 120a, And the side surface of the first organic barrier layer 120a is configured to surround the barrier ribs 150. The first organic barrier layer 120a may be formed of a material having a high thermal conductivity.

At this time, the barrier ribs 150 may be made of an organic material or a metal and an inorganic material, and the organic material may be a thermosetting resin or a UV curable resin.

The inorganic material may be formed of a silicon oxide film (SiO2), silicon nitride (SixNy), silicon oxynitride film (SiON), aluminum oxide (AlOx), aluminum nitride (AlO), TIO, ZnO, May be a substance having fine particles.

In this case, as the material having the refined glass microparticles, K2O, Fe2O3, Sb2O3, ZnO, P2O5, V2O5, TiO2, Al2O3, WO3, SnO, PbO, MgO, CaO, BaO, Li2O, Na2O, B2O3, TeO2, SiO2, Ru2O , Rb2O, Rh2O, CuO, and Bi2O3.

The second inorganic barrier layer 110b is formed on the first organic barrier layer 120a and the second inorganic barrier layer 110b is formed on the upper surface of the first organic barrier layer 120a and the inner surface of the barrier 150 Respectively.

The second organic barrier layer 120b is formed on the second inorganic barrier layer 110b and the second inorganic barrier layer 120b has a structure in which the side surfaces and the bottom surface are surrounded by the second inorganic barrier layer 110b. .

A third inorganic barrier layer 110c is formed on the second inorganic barrier layer 110b formed on the upper portion of the second organic barrier layer 120b and the inner surface of the barrier 150, A third organic barrier layer 120c is formed on the layer 110c.

At this time, the third organic barrier layer 120c is also formed by the third inorganic barrier layer 110c so as to surround the side surface and the bottom surface.

At this time, the second inorganic barrier layer 110b and the third inorganic barrier layer 110c are formed on the upper portion of the barrier rib 150. At this time, the third inorganic barrier layer 120c and the third inorganic barrier layer The layer 110c preferably has the same plane and a fourth inorganic barrier layer 110d is further formed on the third organic barrier layer 120c and the third inorganic barrier layer 110c.

The driving thin film transistor DTr and the organic light emitting diode E of the flexible OLED 100 are formed on the fourth inorganic barrier layer 110d.

It can be seen that the bezel region B 'of the flexible OLED 100 according to the second embodiment of the present invention becomes narrower than the bezel region A of the first flexible OLED 100 and the first flexible OLED 100'.

In detail, the barrier layer 140 is formed by alternately repeating the inorganic barrier layers 110a, 110b, 110c and 110d and the organic barrier layers 120a, 120b and 120c on the flat substrate 101 The organic barrier layers 120a, 120b, and 120c formed on the inorganic barrier layers 110a, 110b, 110c, and 110d are formed on the inorganic barrier layers 110a, 110b, 110c, In order to be formed on the inorganic barrier layers 110a, 110b, 110c, and 110d having a good flatness, the inorganic barrier layers 120a, 120b, As shown in FIG.

Therefore, the driving TFT DTr and the organic light emitting diode E formed on the barrier layer 140 are further recessed inwardly from the edge of the substrate 101, so that the effective light emission The inorganic barrier layers 110a, 110b, 110c, and 110d and the organic barrier layers 120a, 120b, and 120c are formed by being recessed inward from the edge of the substrate 101 A bezel region (A in Fig. 2) which is a non-emission region forming a step is increased.

In contrast, the flexible OLED 100 according to the second embodiment of the present invention includes inorganic barrier layers 110a, 110b, and 110c in a storage region D defined by barrier ribs 150 formed along the edge of the substrate 101, The inorganic barrier layers 110a, 110b, 110c, and 110d formed on the organic barrier layers 120a, 120b, and 120c are stacked alternately and repeatedly, The organic barrier layers 120a, 120b and 120c formed on the inorganic barrier layers 110a, 110b, 110c and 110d are not formed along the step of the organic barrier layers 120a, 120b and 120c, It is not necessary to be formed by being recessed inwardly from the ends of the organic barrier layers 120a, 120b, and 120c located at the bottom by the area A 'shown in FIG.

As a result, the bezel area B 'of the flexible OLED 100 according to the second embodiment of the present invention can be formed narrower than the bezel area A of FIG. 1 and the second flexible OLED 100 .

Here, in the second embodiment of the present invention, the first to fourth inorganic barrier layers 110a, 110b, 110c and 110d and the first to third organic barrier layers 120a, 120b and 120c are alternately repeatedly laminated, The barrier layer 140 may include at least one organic barrier layer 120a, 120b and 120c and at least one inorganic barrier layer 110a, 110b, 110c, and 110d ) Can be alternately laminated and formed.

In the drawings and the description above, the first to fourth inorganic barrier layers 110a, 110b, 110c, and 110d are also formed on the barrier ribs 150, or the barrier ribs 150 may be formed to have a higher height, The barrier ribs 150 may cover the first to fourth inorganic barrier layers 110a, 110b, 110c and 110d and the first to third organic barrier layers 120a, 120b and 120c.

In the second embodiment of the present invention, the partition 150 is formed on the first inorganic barrier layer 110a. However, the partition 150 may be formed on the substrate 101, It is also possible that the barrier layer 110a is formed along the bottom surface of the substrate 101 and the inner surface of the partition 150.

The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the present invention.

100: OLED, 101: substrate
110a, 110b, 110c, 110d: inorganic barrier layer
111: first electrode, 113: organic light emitting layer, 115: second electrode
120a, 120b, 120c: organic barrier layer, 130a, 130b, 130c: protective film
DTr: driving thin film transistor, P: pixel region

Claims (13)

A substrate having a bottom surface and four sides of the bottom surface bent upwardly and defining a receiving area therein;
A lower encapsulation layer formed by alternately stacking at least one organic film and at least one inorganic film in the accommodating area;
A driving thin film transistor and an organic light emitting diode formed on the lower sealing layer;
An upper encapsulation layer covering the driving thin film transistor and the organic light emitting diode
/ RTI >
Wherein the at least one organic film comprises a first organic film,
Wherein the at least one inorganic film includes a first inorganic film that surrounds a side surface and a bottom surface of the first organic film under the first organic film and a second inorganic film that covers an upper surface of the first organic film above the first organic film And the organic EL device is a flexible organic electroluminescent device.
Claims [1]
A partition wall formed around the four edges of the substrate;
A lower encapsulation layer formed by alternately stacking at least one organic film and at least one inorganic film in the partition wall;
A driving thin film transistor and an organic light emitting diode formed on the lower sealing layer;
An upper encapsulation layer covering the driving thin film transistor and the organic light emitting diode
/ RTI >
Wherein the at least one organic film comprises a first organic film,
Wherein the at least one inorganic film includes a first inorganic film that surrounds a side surface and a bottom surface of the first organic film under the first organic film and a second inorganic film that covers an upper surface of the first organic film above the first organic film And the organic EL device is a flexible organic electroluminescent device.
3. The method according to one of claims 1 and 2,
Wherein the at least one inorganic film has a structure surrounding the at least one organic film.
The method according to claim 1,
Wherein the at least one inorganic film is formed along a bottom surface of the substrate and a side surface of the substrate, and the at least one organic film is formed on the at least one inorganic film corresponding to a bottom surface of the substrate.
3. The method of claim 2,
Wherein the at least one inorganic film is formed along an inner surface of the partition, and the at least one organic film is formed on the at least one inorganic film corresponding to a bottom surface of the substrate.
A substrate having a bottom surface and four sides of the bottom surface bent upwardly and defining a receiving area therein;
A lower encapsulation layer formed by alternately stacking at least one organic film and at least one inorganic film in the accommodating area;
A driving thin film transistor and an organic light emitting diode formed on the lower sealing layer;
An upper encapsulation layer covering the driving thin film transistor and the organic light emitting diode
/ RTI >
Wherein the at least one inorganic film is composed of first to fourth inorganic films, the at least one organic film is composed of first to third organic films, and the first inorganic film is formed on the bottom surface of the substrate and the inside surface Wherein the first inorganic film is formed along the inner surface of the upper surface of the first organic film and the side surface of the substrate, and the second inorganic film is formed along the inner surface of the side surface of the substrate, The third inorganic film is formed along the upper surface of the second organic film and the inner side surface of the side surface of the substrate, and the third organic film is formed by the second inorganic film, Wherein a side face and a bottom face are surrounded by the third inorganic film and the fourth inorganic film is positioned on the third organic film and the third inorganic film.
Claims [1]
A partition wall formed around the four edges of the substrate;
A lower encapsulation layer formed by alternately stacking at least one organic film and at least one inorganic film in the partition wall;
A driving thin film transistor and an organic light emitting diode formed on the lower sealing layer;
An upper encapsulation layer covering the driving thin film transistor and the organic light emitting diode
/ RTI >
Wherein the at least one inorganic film is composed of first to fourth inorganic films, the at least one organic film is composed of first to third organic films, the first inorganic film is formed on the substrate, Wherein the first inorganic film is formed on the upper surface of the first organic film and the inner surface of the partition wall, and the second inorganic film is formed along the inner surface of the partition wall, 2 organic film is disposed on the side surface and the bottom surface by the second inorganic film and the third inorganic film is formed along the upper surface of the second organic film and the inner surface of the partition wall, And the fourth inorganic film is located on the third organic film and the third inorganic film.
The method according to claim 6,
Wherein the first to fourth inorganic films are formed on an upper side of the substrate, and the third inorganic film and the third organic film formed on the side surface of the substrate are flush with each other.
8. The method of claim 7,
Wherein the first to fourth inorganic films are formed on the barrier ribs, and the third inorganic film and the third organic film formed on the barrier ribs are flush with each other.
3. The method according to one of claims 1 and 2,
Wherein the at least one inorganic film is formed of one selected from the group consisting of a silicon oxide film (SiO2), silicon nitride (SixNy), silicon oxynitride film (SiON), aluminum oxide (AlOx), aluminum nitride (AlO) Acrylate monomer, phenylacetylene, diamine and dianhydride, siloxane, silane, parylene, olefin-based polymer (polyethylene, polypropylene ), A polyethylene terephthalate (PET), a fluororesin (fluororesin), and a polysiloxane.
3. The method according to one of claims 1 and 2,
Wherein the substrate is made of one selected from a flexible glass substrate or plastic.
3. The method according to one of claims 1 and 2,
Wherein the driving thin film transistor includes a semiconductor layer, a gate electrode, a source and a drain electrode.
13. The method of claim 12,
Wherein the organic light emitting diode includes a first electrode connected to the driving thin film transistor, an organic light emitting layer, and a second electrode.

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