KR101744875B1 - Organic light emitting diodes - Google Patents

Abstract

The present invention relates to an organic light emitting device, and more particularly, to an organic light emitting device for preventing penetration of moisture and oxygen from the outside.
A feature of the present invention is that a passivation layer is formed on an organic light emitting diode, and the substrate and the encapsulation substrate are encapsulated through an adhesive layer composed of first to third adhesive layers.
As a result, it is possible to prevent moisture and oxygen from penetrating into the organic light emitting diode from the outside, thereby preventing oxidization and corrosion of the electrode layer, preventing current leakage and short circuit, Can be prevented.

Description

[0001] The present invention relates to organic light emitting diodes

The present invention relates to an organic light emitting device, and more particularly, to an organic light emitting device for preventing penetration of moisture and oxygen from the outside.

Until recently, CRT (cathode ray tube) was mainly used as a display device. However, a flat panel display device such as a plasma display panel (PDP), a liquid crystal display device (LCD), and an organic light emitting diode (OLED) Have been widely studied and used.

Among the above flat panel display devices, an organic light emitting element (hereinafter referred to as OLED) is a self-light emitting element, and a backlight used in a liquid crystal display device which is a non-light emitting element is not required.

In addition, it has a better viewing angle and contrast ratio than liquid crystal display devices, is advantageous in terms of power consumption, can be driven by DC low voltage, has a fast response speed, is resistant to external impacts due to its solid internal components, It has advantages.

Particularly, since the manufacturing process is simple, it is advantageous in that the production cost can be saved more than the conventional liquid crystal display device.

The OLED is a self-luminous element that emits light through the organic electroluminescent diode, and the organic electroluminescent diode emits light through the organic electroluminescent phenomenon.

OLEDs having such characteristics are largely divided into a passive matrix type and an active matrix type. In a passive matrix type, a device is formed in a matrix form while crossing signal lines, whereas an active matrix type is a pixel A thin film transistor which is a switching element for on / off switching, a driving thin film transistor for flowing a current, and a capacitor for holding a voltage for one frame in a driving thin film transistor are provided for each pixel.

In recent years, passive matrix type has many limitations such as resolution, power consumption and lifetime, and active matrix type OLED capable of realizing high resolution and large screen is actively being studied.

1 schematically shows a cross section of a general active matrix type OLED, wherein the OLED is a bottom emission type.

1, the OLED 10 includes a first substrate 1 and a second substrate 3 facing the first substrate 1, and the first and second substrates 1, And the marginal portion of the sealing member 20 is sealed and bonded together through a seal pattern 20.

In more detail, a driving thin film transistor DTr is formed for each pixel region on the first substrate 1, a first electrode 11 connected to each driving thin film transistor DTr, An organic light emitting layer 13 that emits light of a specific color is formed on the upper portion of the organic light emitting layer 11 and a second electrode 15 is formed on the organic light emitting layer 13.

The organic light emitting layer 13 displays red, green, and blue colors. As a general method, separate organic materials 13a, 13b, and 13c emitting red, green, and blue light are patterned and used for each pixel.

The first and second electrodes 11 and 15 and the organic light emitting layer 13 formed therebetween form an organic light emitting diode. At this time, the OLED 10 having such a structure constitutes the first electrode 11 as the anode and the second electrode 15 as the cathode.

Recently, organic light emitting diodes (OLEDs) are very sensitive to moisture and oxygen. Therefore, encapsulation of OLEDs 10 for protecting organic light emitting diodes from moisture and oxygen in the air has been actively studied.

Here, when oxygen or moisture flows into the OLED 10, the electrode layer is oxidized and corroded. In such a case, the risk of current leakage and short-circuiting increases and a pixel defect occurs. As a result, There is a problem that the lifetime of the battery is reduced.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is a first object of the present invention to effectively encapsulate an OLED.

It is a third object of the present invention to prevent oxidization and corrosion of the electrode layer and to prevent current leakage and short circuit from occurring. It is a third object of the present invention to prevent the occurrence of pixel defects and life span reduction.

According to an aspect of the present invention, there is provided a liquid crystal display comprising: a first substrate on which a driving thin film transistor and an organic light emitting diode are formed; An adhesive layer formed on the organic light emitting diode and covering the entire surface of the first substrate, the adhesive layer including first and second adhesive layers; And a second substrate bonded to the first substrate through the adhesive layer.

In this case, the adhesive layer may further include a third adhesive layer on the second adhesive layer, and a silicon oxide layer (SiO2), silicon nitride (SixNy), silicon oxynitride (SiON) , Aluminum oxide (AlOx), aluminum nitride (Alon), TIO, and a passivation layer made of an inorganic material such as ZnO.

The second adhesive layer may be formed of a metal material of at least one of inorganic materials such as gallium (Ga), calcium (Ca), barium (Ba), strontium (Sr), silicon (Si), and magnesium And an inorganic filler composed of at least one inorganic material selected from the group consisting of silicon nitride (SiON), silicon nitride (SiON), silicon oxynitride (SiON), aluminum oxide (AlOx), aluminum nitride 2 The adhesive layer may be formed of an acrylate monomer, a phenylacetylene, a diamine, a dianhydride, a siloxane, a silane, a parylene, an olefinic polymer and an organic filler composed of at least one organic material selected from polyethylene terephthalate (PET), fluororesin, and polysiloxane.

The content of the metal material or the inorganic filler is 5 to 30%, and the thickness of the second adhesive layer is 5 to 15 탆.

At this time, the first and third adhesive layers each have a thickness of 3 to 10 mu m.

As described above, according to the present invention, a passivation layer is formed on an organic light emitting diode, and the substrate and the encapsulation substrate are encapsulated through an adhesive layer composed of first to third adhesive layers, It is possible to prevent water and oxygen from penetrating into the organic electroluminescent diode, thereby preventing oxidization and corrosion of the electrode layer, preventing current leakage and short circuit, There is an effect that it is possible to prevent the occurrence of a reduction in life span.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 schematically shows a cross-section of a general active matrix type OLED;
2 schematically shows a cross-section of an OLED according to a first embodiment of the present invention.
3 schematically shows a cross-section of an OLED according to a second embodiment of the present invention.
4 is a cross-sectional view illustrating a part of a dual panel type OLED according to a second embodiment of the present invention;

Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings.

- First Embodiment -

2 is a schematic cross-sectional view of an OLED according to a first embodiment of the present invention.

Prior to the description, the OLED 100 is divided into a top emission type and a bottom emission type according to the transmission direction of the emitted light. The bottom emission type has high stability and high degree of freedom in the process, Studies on the bottom emission type are being actively carried out. Hereinafter, the present invention will be described by way of an example of a bottom emission type.

The OLED 100 according to the present invention includes a substrate 101 on which a driving and switching thin film transistor DTr (not shown) and an organic light emitting diode E are formed, an encapsulation substrate 102 for encapsulation ).

A semiconductor layer 103 is formed on the pixel region P on the substrate 101. The semiconductor layer 103 is made of silicon and has a central portion including an active region 103a and a channel region 103b. And source and drain regions 103b and 103c doped with impurities at a high concentration on both sides thereof.

A gate insulating layer 105 is formed on the semiconductor layer 103.

The gate electrode 107 is formed on the gate insulating film 203 in correspondence with the active region 103a of the semiconductor layer 103 and a gate wiring extending in one direction although not shown in the drawing.

The first interlayer insulating film 109a and the gate insulating film 105 under the first interlayer insulating film 109a are formed on the entire upper surface of the gate electrode 107 and the gate wiring (not shown) And first and second semiconductor layer contact holes 111a and 111b respectively exposing the source and drain regions 103b and 103c located on both sides of the first and second semiconductor layer contact holes 103a and 103a.

Next, upper portions of the first interlayer insulating film 109a including the first and second semiconductor layer contact holes 111a and 111b are separated from each other by a source exposed through the first and second semiconductor layer contact holes 111a and 111b, And source and drain electrodes 113 and 115 which are in contact with the drain regions 103b and 103c, respectively.

And a drain contact hole 117 exposing the drain electrode 115 to the upper portion of the first interlayer insulating film 109a exposed between the source and drain electrodes 113 and 115 and the two electrodes 113 and 115, An insulating film 109b is formed.

At this time, the semiconductor layer 103 including the source and drain electrodes 113 and 115 and the source and drain regions 103b and 103c contacting the electrodes 113 and 115 and the gate electrode 103 formed on the semiconductor layer 103 (107) constitute a driving thin film transistor (DTr).

On the other hand, although not shown in the drawing, data lines (not shown) are formed which cross the gate wiring (not shown) and define the pixel region P. The switching thin film transistor (not shown) has the same structure as the driving thin film transistor DTr and is connected to the driving thin film transistor DTr.

In the drawing, the switching thin film transistor (not shown) and the driving thin film transistor DTr are shown as an example of a top gate type in which the semiconductor layer 103 is a polysilicon semiconductor layer. As a variation thereof, It may be formed as a bottom gate type of impurity amorphous silicon.

The first electrode 211 is connected to the drain electrode 110b of the driving thin film transistor DTr and is formed in a region for substantially displaying an image on the second interlayer insulating film 109b. 211 are made of, for example, a material having a relatively high work function value, and function as a component constituting the organic electroluminescent diode (E).

The first electrode 211 is formed for each pixel region P and a bank 119 is located between the first electrodes 211 formed for each pixel region P.

That is, the first electrodes 211 are formed in a structure in which the banks 119 are divided into the pixel regions P with the boundaries of the respective pixel regions P being separated.

An organic light emitting layer 213 is formed on the first electrode 211.

Here, the organic light emitting layer 213 may be a single layer made of a light emitting material. In order to increase the light emitting efficiency, a hole injection layer, a hole transport layer, an emitting material layer, , An electron transport layer (electron transport layer), and an electron injection layer (electron injection layer).

The organic light emitting layer 213 may emit red (R), green (G), and blue (B) colors. In general, (B) a separate organic material emitting a color is used in a pattern.

A second electrode 215, which is a cathode, is formed on the organic light emitting layer 213.

In this case, the second electrode 215 may be made of an opaque conductive material. For example, the second electrode 215 may be made of a metal material having a relatively low work function value such as aluminum (Al), an aluminum alloy (AlNd), silver (Ag) , Gold (Au), and aluminum magnesium alloy (AlMg).

Accordingly, the light emitted from the organic light emitting layer 213 is driven by the lower light emitting method, which is emitted toward the transparent first electrode 211.

When a predetermined voltage is applied to the first electrode 211 and the second electrode 215 in accordance with a selected color signal, the OLED 100 emits light from the holes injected from the first electrode 211 and the holes injected from the second electrode 215 The provided electrons are transported to the organic light emitting layer 213 to form an exciton. When the excitons transit from the excited state to the ground state, light is emitted and emitted in the form of visible light.

At this time, the emitted light passes through the transparent first electrode 215 and exits to the outside, so that the OLED 100 realizes an arbitrary image.

A passivation layer 130 in the form of a thin film is formed on the driving TFT DTr and the organic light emitting diode E and an encapsulation substrate 102 is formed on the passivation layer 130 Thus, the substrate 101 and the in-cap substrate 102 are bonded to each other through the adhesive layer 200 having adhesive properties.

Thereby, the OLED 100 is encapsulated.

At this time, the passivation layer 130 protects the driving thin film transistor DTr and the organic electroluminescent diode E formed on the substrate 101 by preventing external moisture from penetrating into the organic electroluminescent diode E, , And is formed on the substrate 101 to surround the organic electroluminescent diode (E).

Here, the passivation layer 130 may be formed of an inorganic material such as a silicon oxide film (SiO2), silicon nitride (SixNy), silicon oxynitride (SiON), aluminum oxide (AlOx), aluminum nitride have.

In the OLED 100 of the present invention, the adhesive layer 200 is divided into a first adhesive layer 210 and a second adhesive layer 220. The first adhesive layer 210 and the second adhesive layer 220 are all formed of a monomer or a polymer thin film And the like.

Examples of the monomer include acrylate monomer, phenylacetylene, diamine, dianhydride, siloxane, silane, and parylene. As the polymer thin film, an olefin-based polymer (polyethylene, polypropylene), polyethylene terephthalate (PET), fluororesin, polysiloxane, or the like can be used.

In particular, the second adhesive layer 220 of the present invention may be formed of a material such as gallium (Ga), calcium (Ca), barium Ba, strontium (Sr), silicon (Si), and magnesium (Mg) (SiON), silicon oxynitride (SiON), aluminum oxide (AlOx), aluminum nitride (Alon), TIO, ZnO, and the like And an inorganic filler composed of an inorganic material of the inorganic filler.

Alternatively, the inorganic filler may be mixed with an organic filler. The organic filler may be an acrylate monomer, phenylacetylene, diamine, dianhydride, siloxane, Silane, parylene, polyethylene, polypropylene, polyethylene terephthalate (PET), fluororesin, polysiloxane, and the like can be used.

Here, the content of the metal material 230 or the inorganic filler contained in the adhesive layer 200 is preferably 5 to 30%, and the thickness of the second adhesive layer 220 is preferably 5 to 15 μm.

The metal material 230 or the inorganic filler may be a material of a pollution source such as moisture and gas which may be formed due to defects such as pinehole, grain boundary, crack of the adhesive layer 200 made of an organic material, It is possible to improve the resistance characteristic to these by blocking the transmission passage.

Particularly, the metal material 230 or the inorganic filler has a high absorption rate of oxygen and moisture, so that even if moisture and oxygen are introduced into the adhesive layer 200 from outside, the metal material 230 or the inorganic filler in the second adhesive layer 220 .

Therefore, the OLED 100 according to the present invention can prevent a contaminant such as moisture or gas from penetrating from the outside into the OLED 100 through the adhesive layer 200, and in particular, the second adhesive layer 220 It is possible to prevent the contaminants from flowing into the adhesive layer 200 through the metal material 230 or the inorganic filler contained in the adhesive layer 200.

Even if a contaminant source flows into the adhesive layer 200, a contamination source can be prevented from penetrating into the driving thin film transistor DTr and the organic light emitting diode E through the passivation layer 130.

That is, the organic light emitting diode (E) of the OLED 100 according to the present invention primarily defends a source of contamination from the outside by the adhesive layer 200, and further, by the passivation layer 130, Can be secondarily defended.

In the OLED 100 of the present invention, since the adhesive layer 200 is formed between the organic electroluminescent diode E and the in-cap substrate 102, the conventional seal pattern 20 can be omitted.

By omitting the seal pattern (20 in FIG. 1), there is a problem that a contaminant such as moisture or gas penetrates into the OLED 100 from the outside by the seal pattern (20 in FIG. 1) made of a polymer material Can be prevented.

The OLED 100 according to the present invention does not cause the pressing of the OLED 100 by the adhesive layer 200 and the passivation layer 130 even when pressure is applied from outside, It is possible to prevent a crack from occurring in the first and second electrodes 211 and 215 or the driving thin film transistor DTr.

Therefore, it is possible to prevent the occurrence of defects such as a defect in a dark spot, thereby preventing a problem of non-uniformity of luminance and image characteristics.

The substrate 101 may be formed of glass, plastic material, stainless steel, or the like, and the in-cap substrate 102 may be formed of glass, metal foil, or the like. have.

In this case, the OLED 100 according to the present invention can form the in-cap substrate 102 with a small thickness compared with the case where the in-cap substrate 102 is formed of a metal foil to form the second substrate with glass, Can be reduced.

In addition, the durability of the OLED 100 itself can be improved, and the heat dissipation characteristics of the OLED 100 can be improved, even though the thickness of the OLED 100 is reduced.

As described above, the OLED 100 according to the present invention includes the passivation layer 130 formed on the driving thin film transistor DTr and the organic light emitting diode E, and the substrate 101 and the in- The organic electroluminescent light emitting diode E can be protected from external pollutants for a second time by encapsulating the organic electroluminescent light emitting diode E through the organic light emitting diode 200.

- Second Embodiment -

3 is a schematic cross-sectional view of an OLED according to a second embodiment of the present invention.

In order to avoid redundant description, the same parts as those of the first embodiment described above are denoted by the same reference numerals, and only the characteristic contents described above in the second embodiment will be described.

The OLED 300 according to the present invention includes a substrate 101 on which a driving and switching thin film transistor DTr (not shown) and an organic light emitting diode E are formed, an encapsulation substrate 102 for encapsulation ).

The driving thin film transistor DTr includes a semiconductor layer 103 composed of an active region 103a and source and drain regions 103b and 103 and a gate electrode 107 and source and drain electrodes 113 and 115 And includes a gate insulating film 105 and first and second interlayer insulating films 109a and 109b and first and second semiconductor layer contact holes 111a and 111b and a drain contact hole 117. [

The first electrode 211 is connected to the drain electrode 115 of the driving thin film transistor DTr and is formed in a region substantially displaying an image on the second interlayer insulating film 109b. For example, is made of a material having a relatively high work function value, and functions as a constituent element of the organic electroluminescent diode E.

The first electrode 211 is formed for each pixel region P and the bank 119 is located between the first electrodes 211 formed for each pixel region P. [

An organic light emitting layer 213 is formed on the first electrode 211. The organic light emitting layer 213 may be a single layer made of a light emitting material and may be a hole injection layer A hole transport layer, a light emitting material layer, an electron transport layer, and an electron injection layer.

The organic light emitting layer 213 may emit red (R), green (G), and blue (B) colors. In general, (B) a separate organic material emitting a color is used in a pattern.

A second electrode 215, which is a cathode, is formed on the organic light emitting layer 213.

In this case, the second electrode 215 may be made of an opaque conductive material. For example, the second electrode 215 may be made of a metal material having a relatively low work function value such as aluminum (Al), an aluminum alloy (AlNd), silver (Ag) , Gold (Au), and aluminum magnesium alloy (AlMg). Accordingly, the light emitted from the organic light emitting layer 213 is driven by the lower light emitting method, which is emitted toward the transparent first electrode 211.

When a predetermined voltage is applied to the first electrode 211 and the second electrode 215 in accordance with a selected color signal, the OLED 300 emits the positive holes injected from the first electrode 211 and the holes injected from the second electrode 215 The provided electrons are transported to the organic light emitting layer 213 to form an exciton. When the excitons transit from the excited state to the ground state, light is emitted and emitted in the form of visible light.

At this time, the emitted light passes through the transparent first electrode 211 and exits to the outside, so that the OLED 300 realizes an arbitrary image.

A passivation layer 130 in the form of a thin film is formed on the driving thin film transistor DTr and the organic electroluminescent diode E and an encapsulation substrate 102 is provided on the passivation layer 130, (101) and the in-substrate (102) are bonded to each other through an adhesive layer (200) having adhesive properties.

Thereby, the OLED 300 is encapsulated.

At this time, the passivation layer 130 protects the driving thin film transistor DTr and the organic electroluminescent diode E formed on the substrate 101 by preventing external moisture from penetrating into the organic electroluminescent diode E, , And is formed on the substrate 101 to surround the organic electroluminescent diode (E).

Here, the passivation layer 130 may be formed of an inorganic material such as a silicon oxide film (SiO2), silicon nitride (SixNy), silicon oxynitride (SiON), aluminum oxide (AlOx), aluminum nitride have.

The adhesive layer 200 is formed by sequentially forming first to third adhesive layers 210, 220 and 240. The first to third adhesive layers 210, 220 and 240 are all formed of a monomer or a polymer thin film And the like.

Examples of the monomer include acrylate monomer, phenylacetylene, diamine, dianhydride, siloxane, silane, and parylene. As the polymer thin film, an olefin-based polymer (polyethylene, polypropylene), polyethylene terephthalate (PET), fluororesin, polysiloxane, or the like can be used.

In particular, the adhesive layer 200 according to the second embodiment of the present invention includes a second adhesive layer 220 interposed between the first and third adhesive layers 210 and 240, and a gallium (Ga) , A metal material 230 made of an inorganic material such as calcium (Ca), barium (Ba), strontium (Sr), silicon (Si) and magnesium (Mg) ), An inorganic oxide filler comprising an inorganic material such as silicon oxide nitride (SiON), aluminum oxide (AlOx), aluminum nitride (AlO), TIO, ZnO and the like.

Alternatively, the inorganic filler may be mixed with an organic filler. The organic filler may be an acrylate monomer, phenylacetylene, diamine, dianhydride, siloxane, Silane, parylene, polyethylene, polypropylene, polyethylene terephthalate (PET), fluororesin, polysiloxane, and the like can be used.

Here, the content of the metal material 230 or the inorganic filler contained in the second adhesive layer 220 is preferably 5 to 30%, and the thickness of the second adhesive layer 200 is preferably 5 to 15 μm.

The thickness of the first and third adhesive layers 210 and 240 is preferably 3 to 10 mu m.

The metal material 230 or the inorganic filler may be a material of a pollution source such as moisture and gas which may be formed due to defects such as pinehole, grain boundary, crack of the adhesive layer 200 made of an organic material, It is possible to improve the resistance characteristic to these by blocking the transmission passage.

In particular, the metal material 230 or the inorganic filler has a high absorption rate of oxygen and moisture, so that even if moisture and oxygen are introduced into the adhesive layer 200 from the outside, the metal material 230 or the inorganic filler is absorbed by the metal material 230 or the inorganic filler.

Therefore, the OLED 300 according to the present invention can prevent a contaminant such as moisture or gas from penetrating into the OLED 300 from the outside through the adhesive layer 200, It is possible to prevent the contaminants from flowing into the adhesive layer 200 through the inorganic filler 230 or the inorganic filler.

Even if a contaminant source flows into the adhesive layer 200, a contamination source can be prevented from penetrating into the driving thin film transistor DTr and the organic light emitting diode E through the passivation layer 130.

That is, the organic electroluminescent diode E of the OLED 300 of the present invention primarily defends a pollution source from the outside through the adhesive layer 200, and further, by the passivation layer 130, Can be secondarily defended.

In the OLED 300 of the present invention, the adhesive layer 200 is formed between the organic electroluminescent diode E and the in-cap substrate 102, so that the conventional seal pattern 20 can be omitted.

By omitting the seal pattern (20 in FIG. 1), there is a problem that a contaminant such as moisture or gas penetrates into the OLED 300 from the outside by an actual pattern (20 in FIG. 1) made of a polymer material Can be prevented.

In the OLED 300 of the present invention, even if a pressure such as pressing is applied from outside, the OLED 300 is not pressed by the adhesive layer 200 and the passivation layer 130, It is possible to prevent cracks of the first and second electrodes 211 and 215 or the driving thin film transistor DTr from being generated.

Therefore, it is possible to prevent the occurrence of defects such as a defect in a dark spot, thereby preventing a problem of non-uniformity of luminance and image characteristics.

In particular, the OLED 300 of the second embodiment of the present invention encapsulates the substrate 101 and the in-cap substrate 102 through the adhesive layer 200 composed of the first to third adhesive layers 210, 220 and 240, The higher temperature and high humidity reliability can be improved as compared with the OLED (100 in FIG. 2) of the first embodiment of the present invention.

(Example 1)

2, the OLED 100 according to the first embodiment includes a passivation layer 130 and an adhesive layer 200 divided into first to second adhesive layers 210 and 220, It becomes a rule.

The passivation layer 130 is made of an inorganic material and the second adhesive layer 220 includes a metal material 230 or an inorganic filler.

(Example 2)

3, the OLED 300 according to the second embodiment includes the passivation layer 130 and the adhesive layer 200 divided into the first to third adhesive layers 210, 220 and 240, Lt; / RTI >

The passivation layer 130 is made of an inorganic material and the second adhesive layer 220 includes a metal material 230 or an inorganic filler.

At this time, the content of the metal material 230 or the inorganic filler of the second adhesive layer 220 is 5 to 30% based on the weight of the entire second adhesive layer 220.

(Comparative Example)

Although not shown, the OLED of the comparative example encapsulated into an in-cap substrate through a film made of an organic material.

The high-temperature and high-humidity reliability time of OLEDs prepared according to Example 1, Example 2, and Comparative Example was specified, and the results are shown in Table 1 below. In Table 1 below, the high temperature and high humidity reliability time of the OLED shows a period of time until the initial luminance is 97% luminance (i.e., the 3% luminance is decreased).

High temperature and high reliability time Example 1 121hrs Example 2 126hrs Comparative Example 32hrs

As shown in Table 1, it can be seen that the case of Example 2 in which the adhesive layer 200 is divided into the first to third adhesive layers 210, 220 and 240 has the highest high-temperature and high-humidity reliability time, It can be confirmed that the OLED has a reliability three times or more higher than that of the OLED encapsulated through a film made of an organic material at high temperature and high humidity.

As described above, the OLED 300 of the present invention includes the passivation layer 130 formed on the driving thin film transistor DTr and the organic light emitting diode E, and the passivation layer 130 formed on the substrate 101 and the in- The organic electroluminescent diode E can be protected from the external contaminants secondarily by encapsulation through the adhesive layer 200 divided into the first to third adhesive layers 210, 220 and 240.

Also, the adhesive layer 200 of the present invention is applicable to the dual panel type OLED 400 (see FIG. 4).

4 is a cross-sectional view illustrating a part of a dual panel type OLED according to a second embodiment of the present invention.

The region where the driving thin film transistor DTr is formed is referred to as a driving region DA and the region where the auxiliary electrode 317 is formed is referred to as a non-pixel region NP and a region where the organic electroluminescent diode E is formed Emitting region PA.

The OLED 400 includes a first substrate 401 on which the driving thin film transistor DTr is formed and a second substrate 402 on which the organic light emitting diode E is formed facing each other, And the second substrates 401 and 402 are adhered to each other at a predetermined interval.

Here, the driving thin film transistor DTr includes a semiconductor layer (103 in FIG. 3) composed of an active region (103a in FIG. 3), source and drain regions (103b and 103c in FIG. 3) 3), a gate insulating film (105 in FIG. 3), first and second interlayer insulating films (109a and 109b in FIG. 3), first and second semiconductors Layer contact holes (111a and 111b in Fig. 3), and drain contact holes (117 in Fig. 3).

3) is formed on the second interlayer insulating film (109b in FIG. 3) by a drain electrode (117 in FIG. 3) through a drain contact hole (117 in FIG. 3) .

An auxiliary electrode 317 is formed on each of the non-pixel regions NA on the second substrate 402 facing the first substrate 401 facing each other. The auxiliary electrode 317 is formed on the second substrate 402 including the auxiliary electrode 317, A first electrode 211 constituting an anode is formed as a component constituting the organic electroluminescent diode E on the front surface of the first electrode layer 402.

Here, the first electrode 211 may be made of indium-tin-oxide (ITO), which is a relatively high work function value.

In the non-pixel region NA above the first electrode 211 on which the auxiliary electrode 317 is formed, a predetermined thickness is formed in the upper portion of the buffer layer 319 and the buffer layer 319 at a boundary portion for each pixel region P A partition wall 321 is formed.

The cross-sectional area of the barrier rib 321 is smaller as the cross-sectional area of the barrier rib 321 is closer to the first electrode 211. The cross-sectional area of the barrier rib 321 increases as the cross- ) Structure.

A driving thin film transistor DTr formed on the first substrate 401 for each pixel region P to supply current to the organic light emitting diode E is formed on one side of the buffer layer 319 on which the barrier ribs 321 are formed, A columnar contact spacer 323 for electrically connecting the organic electroluminescent diodes E formed on the second substrate 402 with each other is formed.

The contact spacer 323 has a tapered shape with a cross-sectional area close to the first electrode 211 and a cross-sectional area that decreases as the distance from the first electrode 211 increases.

An organic emission layer 213 and a second electrode 215 are sequentially formed on the entire surface of the second substrate 402 including the barrier rib 321 and the contact spacer 323.

Since the organic light emitting layer 213 and the second electrode 215 are formed in a structure that is automatically separated for each pixel region P by the barrier ribs 321 without a separate mask process, The material layer 213a and the second electrode material layer 215a may be left in turn.

A passivation layer 130 in the form of a thin film is formed on the organic electroluminescent diode E and an adhesive layer 200 having an adhesive property is disposed on the passivation layer 130, And the second substrate 402 are bonded to each other through the adhesive layer 200 to complete the dual pattern type OLED 400.

At this time, the passivation layer 130 protects the organic electroluminescent diode E formed on the second substrate 402 by preventing external moisture from penetrating into the organic electroluminescent diode E, Is formed on the second substrate (402) surrounding the diode (E).

Here, the passivation layer 130 may be formed of an inorganic material such as a silicon oxide film (SiO2), silicon nitride (SixNy), silicon oxynitride (SiON), aluminum oxide (AlOx), aluminum nitride have.

The adhesive layer 200 is formed by sequentially forming first to third adhesive layers 210, 220 and 240. The first to third adhesive layers 210, 220 and 240 are all formed of a monomer or a polymer thin film And the like.

Examples of the monomer include acrylate monomer, phenylacetylene, diamine, dianhydride, siloxane, silane, and parylene. As the polymer thin film, an olefin-based polymer (polyethylene, polypropylene), polyethylene terephthalate (PET), fluororesin, polysiloxane, or the like can be used.

In particular, the adhesive layer 200 according to the second embodiment of the present invention includes a second adhesive layer 220 interposed between the first and third adhesive layers 210 and 240, and a gallium (Ga) , A metal material 230 made of an inorganic material such as calcium (Ca), barium (Ba), strontium (Sr), silicon (Si) and magnesium (Mg) ), An inorganic oxide filler comprising an inorganic material such as silicon oxide nitride (SiON), aluminum oxide (AlOx), aluminum nitride (AlO), TIO, ZnO and the like.

Alternatively, the inorganic filler may be mixed with an organic filler. The organic filler may be an acrylate monomer, phenylacetylene, diamine, dianhydride, siloxane, Silane, parylene, polyethylene, polypropylene, polyethylene terephthalate (PET), fluororesin, polysiloxane, and the like can be used.

Here, the content of the metal material 230 or the inorganic filler contained in the adhesive layer 200 is preferably 5 to 30%, and the thickness of the second adhesive layer 200 is preferably 5 to 15 μm.

The metal material 230 or the inorganic filler may be a material of a pollution source such as moisture and gas which may be formed due to defects such as pinehole, grain boundary, crack of the adhesive layer 200 made of an organic material, It is possible to improve the resistance characteristic to these by blocking the transmission passage.

In particular, the metal material 230 or the inorganic filler has a high absorption rate of oxygen and moisture, so that even if moisture and oxygen are introduced into the adhesive layer 200 from the outside, the metal material 230 or the inorganic filler is absorbed by the metal material 230 or the inorganic filler.

Here, the content of the metal material 230 or the inorganic filler contained in the second adhesive layer 220 is preferably 5 to 30%, and the thickness of the second adhesive layer 200 is preferably 5 to 15 μm.

The thickness of the first and third adhesive layers 210 and 240 is preferably 3 to 10 mu m.

The second electrode 215 on the contact spacer 323 is exposed by laser patterning the passivation layer 130 and the adhesive layer 200 corresponding to the contact spacer 323 to expose the second electrode 215, And is electrically connected to the connection electrode 140 formed on the first substrate 401.

Accordingly, the dual panel type OLED 400 according to the present invention can prevent the contaminants such as moisture and gas from penetrating from the outside into the inside of the dual panel type OLED 400 through the adhesive layer 200, The metal material 230 or the inorganic filler contained in the adhesive layer 220 can prevent the contaminants from flowing into the adhesive layer 200.

Even if a contaminant source flows into the adhesive layer 200, a contamination source can be prevented from penetrating into the organic light emitting diode E through the passivation layer 130.

That is, the organic electroluminescent diode E of the dual-panel type OLED 400 of the present invention primarily defends a pollution source from the outside through the adhesive layer 200, and the moisture or gas Can be secondarily defended.

The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the present invention.

101: substrate 102: substrate
103: semiconductor layer 103a (active region, 103b, 103c: source and drain regions)
105: gate insulating film, 107: gate electrode, 109a, 109b: first and second interlayer insulating films
111a and 111b: first and second semiconductor layer contact holes, 113: source electrode, 115: drain electrode
117: drain contact hole, 119: bank, 130: passivation layer
211: first electrode, 213: organic light emitting layer, 215: second electrode,
200: adhesive film (220: adhesive layer, 230: metal material, 240a, 240b: first and second protective films)

Claims (8)

A first substrate on which a driving thin film transistor and an organic light emitting diode are formed;
An adhesive layer formed on the organic light emitting diode and covering the entire surface of the first substrate, the adhesive layer including first and second adhesive layers including an organic material;
And a second substrate which is separated from and adhered to the first substrate through the adhesive layer,
/ RTI >
Wherein the first adhesive layer is located between the organic light emitting diode and the second adhesive layer,
Wherein the second adhesive layer further comprises a metal material, an inorganic filler or a filler, and the thickness of the second adhesive layer is thicker than the thickness of the first adhesive layer.

The method according to claim 1,
Wherein the adhesive layer further comprises a third adhesive layer including an organic material on the second adhesive layer, and the thickness of the third adhesive layer is thinner than the thickness of the second adhesive layer.

The method according to claim 1,
A silicon oxide film (SiON), a silicon nitride oxide (SiON), an aluminum oxide (AlOx), an aluminum nitride (AlON), an inorganic material of TIO, ZnO, etc. are formed between the organic light emitting diode and the first adhesive layer. And a passivation layer formed on the organic light emitting layer.
The method according to claim 1,
Wherein the metal material is at least one of gallium (Ga), calcium (Ca), barium (Ba), strontium (Sr), silicon (Si), and magnesium (Mg)
Wherein the inorganic filler comprises at least one of a silicon oxide film (SiO2), silicon nitride (SixNy), silicon oxynitride film (SiON), aluminum oxide (AlOx), aluminum nitride (AlO), TIO and ZnO.

5. The method of claim 4,
The mixed filler may be selected from the group consisting of acrylate monomer, phenylacetylene, diamine, dianhydride, siloxane, silane, parylene, An organic material filler comprising at least one organic material selected from the group consisting of an olefin polymer (polyethylene, polypropylene), polyethylene terephthalate (PET), fluororesin and polysiloxane, and an inorganic filler Light emitting element.

5. The method of claim 4,
Wherein the content of the metal material or the inorganic filler is 5 to 30% based on the weight of the second adhesive layer.

5. The method of claim 4,
And the thickness of the second adhesive layer is 5 to 15 占 퐉.
3. The method of claim 2,
Wherein each of the first and third adhesive layers has a thickness of 3 to 10 占 퐉.

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