KR20180060464A - Sensing device - Google Patents

Abstract

The present invention relates to a sensing apparatus. A sensor package according to an embodiment of the present invention comprises: a substrate; a housing disposed on the substrate, and including an inlet, an outlet, and a reception space; a gas sensor disposed in the reception space of the housing; and a dust sensor disposed within the reception space of the housing. The gas sensor senses gas contained in air introduced through the inlet of the housing, and the dust sensor senses an amount of dust contained in the air in which convection is generated by being heated by discharge heat of the gas sensor.

Description

[0001] SENSING DEVICE [0002]

The present invention relates to a sensing device, and more particularly, to a sensing device including a dust sensor for sensing dust contained in air in which convection is generated by heat emitted from a gas sensor.

Generally, a dust sensor is a device for detecting the number of minute dust or condensation nucleus floating. The optical dust sensor includes side scattered light and near infrared scattered light.

The principle of the optical dust sensor is that the scattered light pattern is changed according to the particle size when the light is irradiated to the particles, and the scattered light amount is detected according to the variation of the scattered light pattern as described above to convert the concentration of dust .

These optical dust sensors have a separate heater for air convection. The optical dust sensor requires air convection for fine dust separation, and accordingly, a separate heater is provided in the sensor.

On the other hand, the gas sensor is an electronic device that measures the change in electrical conductivity (resistance) caused by an electron exchange reaction of gas components adsorbed on the surface of an oxide semiconductor, which is a gas sensor, to determine the presence or concentration of the gas.

At this time, the sensor of the gas sensor uses an oxide semiconductor sensing material or a catalyst. In order to detect the gas, the gas sensor is operated at a proper temperature of several hundreds degrees with the heater being heated. have.

However, the dust sensor and the gas sensor as described above are applied as separate sensors, respectively, and thus there is a problem that spatial and wasted costs are incurred for realizing the composite sensor.

In the embodiment of the present invention, a sensor device in which a dust sensor and a gas sensor are combined is provided.

Further, in the embodiment of the present invention, there is provided a sensor device in which a heater necessary for air convection in a dust sensor and a heater necessary for heating a sensed object in a gas sensor are shared.

In addition, in the embodiment of the present invention, a sensor device is provided which enables the air convection necessary for the operation of the dust sensor to be performed by using the discharge heat of the gas sensor.

Further, in the embodiment according to the present invention, a sensor device including a gas sensor composed of a composite array is provided.

It is to be understood that the technical objectives to be achieved by the embodiments are not limited to the technical matters mentioned above and that other technical subjects not mentioned are apparent to those skilled in the art to which the embodiments proposed from the following description belong, It can be understood.

A sensor package according to an embodiment of the present invention includes: a substrate; A housing disposed on the substrate, the housing including an inlet, an outlet and an accommodation space; A gas sensor disposed in the housing space of the housing; And a dust sensor disposed in a housing space of the housing, wherein the gas sensor senses gas contained in air introduced through an inlet of the housing, And detects the amount of dust contained in the air heated by convection.

Further, the gas sensor is disposed in an adjacent area of the inlet of the housing.

The dust sensor includes a light emitting portion for emitting light and a light receiving portion for collecting light generated in the light emitting portion.

In addition, the gas sensor generates a rising airflow so that the air moves to a dust detection area formed between the light emitting part and the light receiving part in the accommodation space.

The gas sensor may further include a first gas sensor having a first sensing temperature and a second gas sensor having a second sensing temperature higher than the first sensing temperature, Sensor is located closer to the inlet side than the sensor.

The integrated gas sensor further includes an integrated current device disposed on the substrate and connected in common with the first and second gas sensors, and an integrated control device disposed on the substrate and commonly connected to the first and second gas sensors.

The gas sensor includes a sensor substrate, a sensing electrode and a heater electrode disposed on the sensor substrate, a sensing material disposed on the sensing electrode and the heater electrode, and a sensor disposed on the sensor substrate, And an upper pad connected to the heater electrode.

Further, the sensor substrate includes a ceramic substrate.

In addition, the sensor substrate includes a membrane including at least one of a silicon oxide film and a silicon nitride film.

The gas sensor further includes a lower pad disposed below the sensor substrate, and a connection portion that penetrates the sensor substrate and electrically connects the upper pad and the lower pad.

The sensing object may be divided into a plurality of sensing regions by dividing voids passing through the sensing object, and the heater electrodes are disposed in common on the plurality of sensing regions.

The heater electrode may include a first heating portion disposed on the first sensing region separated by the divisional voids and a second heating portion disposed on the second sensing region separated by the divisional void, The resistance value of the first heating unit is different from the resistance value of the second heating unit.

In addition, at least one of the length, thickness, and line width of the first heating portion is different from at least one of the length, the thickness, and the line width of the second heating portion.

The first heating unit is disposed nearer to the inlet than the second heating unit, and the temperature of the first heating unit is lower than the temperature of the second heating unit.

The sensor package according to the embodiment includes a substrate; A housing disposed on the substrate, the housing including an inlet, an outlet and an accommodation space; And a gas sensor and a dust sensor disposed together in the housing space of the housing, wherein the gas sensor is disposed adjacent to the inlet in the housing space of the housing, and the dust sensor comprises: The air introduced through the inlet of the housing moves upwards through the upward flow generated by the discharge heat of the gas sensor.

The dust sensor includes a light emitting portion for generating light, a light receiving portion for collecting light generated in the light emitting portion, and a lens for integrating the light into the light receiving portion.

The gas sensor is divided into a plurality of gas sensing regions having different sensing temperatures, and the temperature of the sensing region disposed closest to the inlet among the plurality of gas sensing regions is the lowest.

In the embodiment of the present invention, conventionally, the dust sensor and the gas sensor, which are separately provided, are integrated into one module, so that not only the dust amount but also the gas concentration can be measured in one sensor device.

In addition, according to the embodiment of the present invention, by arranging the gas sensor in the housing in which the dust sensor is disposed, the spatial waste in which the plurality of sensors are arranged can be solved, and the volume of the product can be minimized.

Further, according to the embodiment of the present invention, since the heater provided in the gas sensor enables the air convection necessary for the operation of the dust sensor to be performed, the heater required for the dust sensor can be eliminated, .

FIG. 2 is a bottom view of the sensor device of FIG. 1 according to the first embodiment of the present invention, and FIG. 3 is a cross-sectional view of the sensor device according to the second embodiment of the present invention. 1 is a bottom view incorporating the sensor device of Fig. 1 according to an embodiment. Fig.
FIG. 4 is a sectional view of the gas sensor according to the first embodiment of the present invention shown in FIG. 1, and FIG. 5 is a plan view of the gas sensor shown in FIG.
FIG. 6 is a sectional view of a gas sensor according to a second embodiment of the present invention shown in FIG. 1. FIG.
FIG. 7 is a cross-sectional view of a gas sensor according to a third embodiment of the present invention shown in FIG. 1. FIG.
FIG. 8 is a cross-sectional view of a gas sensor according to a fourth embodiment of the present invention shown in FIG. 1. FIG.
FIG. 9 is a sectional view of a gas sensor according to a fifth embodiment of the present invention shown in FIG. 1. FIG.
FIG. 10 is a sectional view of a gas sensor according to a sixth embodiment of the present invention shown in FIG. 1. FIG.
FIG. 11 is a cross-sectional view of a gas sensor according to a seventh embodiment of the present invention shown in FIG. 1. FIG.
12 is a cross-sectional view of a gas sensor according to an eighth embodiment of the present invention shown in FIG.
13 is a plan view of the gas sensor in Fig.
Fig. 14 is a view showing a first modified structure of the gas senes shown in Fig. 13. Fig.
Fig. 15 is a view showing a second modified structure of the gas senes shown in Fig. 13. Fig.
16 is a view showing an example of the resistance change of the heater electrode according to the embodiment of the present invention.
17 is a graph showing the relative adsorption amount according to the detected water temperature of the gas sensor.
18 is a layout diagram of a gas sensor according to another embodiment of the present invention.

Hereinafter, the configuration and operation according to the present invention will be described in detail with reference to the accompanying drawings. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description with reference to the accompanying drawings, the same reference numerals denote the same elements regardless of the reference numerals, and redundant description thereof will be omitted. The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size. Hereinafter, embodiments will be described with reference to the accompanying drawings.

FIG. 2 is a bottom view of the sensor device of FIG. 1 according to the first embodiment of the present invention, and FIG. 3 is a cross-sectional view of the sensor device according to the second embodiment of the present invention. 1 is a bottom view incorporating the sensor device of Fig. 1 according to an embodiment. Fig.

Referring to Fig. 1, the sensor device 1 comprises a substrate 10 and housings 20, 30. The housing 20 and 30 are disposed on the substrate 10 and include a first case 20 in which a dust sensor and a gas sensor are disposed and a second case 20 disposed on the first case 20, And a second case (30) covering the upper region of the second housing (20).

Preferably, the first case 20 may be a housing body that provides a space for mounting the gas sensor and the dust sensor, and the second case 30 may be formed by sealing the inner housing space of the housing body from the outside It may be a housing cover.

The substrate 10 is mounted with various components or elements constituting the sensor device 1 and is provided for holding and supporting the dust sensor and the gas sensor of the sensor device 1. [

Such a substrate 10 may have a flat plate structure. At this time, the substrate 10 may be a printed circuit board (PCB). Here, the substrate 10 may be embodied as a single substrate, or alternatively, may be embodied as a multilayer substrate in which a plurality of substrates are sequentially stacked.

That is, the substrate 10 is a supporting substrate of the sensor device 1 in which a single pattern is formed. The substrate 10 may be an insulating layer on which any circuit pattern of the multilayer substrate having a plurality of lamination structures is formed.

The substrate 10 may be a thermosetting or thermoplastic polymer substrate, a ceramic substrate, an organic-inorganic composite substrate, or a glass fiber impregnated substrate. When a polymer resin is included, the substrate 10 may include an epoxy insulating resin. Based resin and a polyimide-based resin.

That is, the substrate 10 is a plate on which an electric circuit capable of changing the wiring is knitted, and may include all of the printed circuit board, the wiring board, and the insulating substrate made of an insulating material capable of forming a conductor pattern on the surface of the insulating substrate .

The substrate 10 may be rigid or flexible. For example, the substrate 10 may comprise glass or plastic. In detail, the substrate 10 may include chemically reinforced / semi-tempered glass such as soda lime glass or aluminosilicate glass, or may include polyimide (PI), polyethylene terephthalate (PET) , Propylene glycol (PPG) polycarbonate (PC), or the like, or may include sapphire.

In addition, the substrate 10 may include an optically isotropic film. For example, the substrate 10 may include a cyclic olefin copolymer (COC), a cyclic olefin polymer (COP), a polycarbonate (PC), a light polymethyl methacrylate (PMMA), or the like.

In addition, the substrate 10 may be curved with a partially curved surface. That is, the substrate 10 may be partially flat and partially curved with a curved surface. In detail, the end of the substrate 10 may have a curved surface or be curved or curved with a surface having random curvature.

In addition, the substrate 10 may be a flexible substrate having a flexible property. In addition, the substrate 10 may be a curved or bended substrate. At this time, the substrate 10 can express the electric wiring connecting the circuit components based on the circuit design with the wiring diagram, and reproduce the electric conductor on the insulating material. Further, it is possible to form wiring for mounting electric components and connecting them in a circuit, and mechanically fixing components other than the electrical connection function of the components.

A circuit pattern (not shown) is formed on the substrate 10. The circuit pattern is electrically connected to a gas sensor or a dust sensor mounted on the substrate 10.

The circuit pattern may be formed by a conventional manufacturing process of a printed circuit board, such as an additive process, a subtractive process, a modified semi- additive process (MSAP), or a semi-additive process (SAP) A detailed description thereof will be omitted. The circuit pattern may generally include at least one of a surface treatment plated layer of silver, gold and tin in copper.

A control element 11 is disposed on the substrate 10.

The control element 11 may be an element for controlling the operation of the dust sensor and the gas sensor. The control element 11 may include a driving element for supplying a driving signal required for driving the dust sensor and the gas sensor and a processing element for processing the signal obtained from the dust sensor and the gas sensor.

On the substrate 10, housings 20 and 30 are disposed. The housing (20, 30) is provided therein with an accommodation space for accommodating the gas sensor and the dust sensor. The housings 20 and 30 form a shielding film for preventing external light from entering into the receiving space.

The housing (20, 30) is provided with an inlet (31) for introducing air from the outside into a housing space inside the housing (20, 30) And an outlet 32 for discharging the gas to the atmosphere.

That is, a first hole corresponding to the inlet 31 and a second hole corresponding to the outlet 32 are formed in the housing 20, 30. At this time, the inlet / outlet section of the first hole and the second hole may be determined by the position of the gas sensor disposed inside the housing (20, 30).

In other words, a gas sensor and a dust sensor are mounted in the housing space inside the housing (20, 30). A first hole is formed on one side of the housing (20, 30), and a second hole is formed on the other side of the housing (20, 30). At this time, one of the first hole and the second hole is located adjacent to the arrangement region of the gas sensor, and the other is located adjacent to the dust sensor than the gas sensor.

Here, a hole disposed adjacent to the gas sensor may be the inlet 31, and a hole disposed adjacent to the dust sensor may be the outlet 32.

That is, the principle of gas measurement and dust measurement in the sensor device 1 is such that air introduced through the inlet 31 is preferentially supplied to the gas sensor. The gas sensor detects the gas concentration contained in the introduced air.

At this time, a rising air stream is generated by the heat of the joule of the heater included in the gas sensor (that is, the heat emitted from the gas sensor) The dust sensor detects the dust contained in the air raised by the gas sensor. Then, the air continuously rising by the upward airflow is discharged to the outside through the outlet 32 do.

The first case 20 and the second case 30 constituting the housings 20 and 30 may be formed of a material that prevents external electromagnetic noise from flowing into the first case 20 and the second case 30.

Preferably, the first case 20 and the second case 30 are formed of a conductive resin that blocks anion discharge, battery dust-discharge high-voltage discharge, and plasma high-voltage discharge, and stabilizes the operation of the gas sensor and the dust sensor .

The first case (20) includes a first region in which a gas sensor is mounted and a second region in which a dust sensor is mounted.

The first region may be a region adjacent to the inlet 31 so that the gas sensor 26 is disposed in an area adjacent to the inlet 31 so that the gas sensor 26, And detects the gas contained in the air.

A light emitting portion arrangement space 24 in which the light emitting portion 25 of the dust sensor is disposed and a light receiving portion arrangement space 21 in which the light receiving portion 22 is disposed are included in the second region of the first case 20 do.

The light emitting unit arrangement space 25 allows the light emitted from the light emitting unit 25 installed inside to be provided to the dust detection area. At this time, the light emitting unit arrangement space 25 is formed at a predetermined angle with respect to the main surface of the substrate 10. The reason why the light emitting unit disposing space 25 is formed at a predetermined angle is to maximize the light travel distance within a minimum space. The light emitting unit arrangement space 25 guides the light flow while providing the light travel path such that the light generated from the light emitting unit 25 is provided to the dust detection area.

The light emitting portion 25 is disposed in the light emitting portion arrangement space 25. The light emitting unit 25 may be an infrared LED.

The light receiving portion arrangement space 21 allows the light receiving portion 22 provided therein to provide scattered light in the dust detection region. At this time, the light receiving unit arrangement space 21 is formed to be inclined at a predetermined angle with respect to the main surface of the substrate 10. At this time, the light receiving unit arrangement space 21 is formed to be inclined at a predetermined angle in order to maximize the moving distance of the light within a minimum space. The light receiving unit arrangement space 21 guides the light flow while providing the scattered light in the dust detection area to the light receiving unit 22.

A light receiving unit 22 and a lens 23 are disposed in the light receiving unit arrangement space 21. The light receiving unit 22 can receive light scattered in the dust detecting area and convert the optical signal into an electric signal . At this time, a lens 23 for accumulating scattered light to the light receiving portion 22 may be disposed at the entrance of the light receiving portion disposing space 21.

The principle of the dust sensor is that the light emitted from the light emitting part 25 is provided to the dust detection area. At this time, in the dust detection area, there is air raised by convection by the gas sensor 26. The scattered light is generated by the particles (dust) contained in the air, and the light scattered by the dust is accumulated by the lens 23 and is supplied to the light receiving part 22. [ The light receiving unit 22 receives the scattered light and provides the control device 11 with information on the amount of the received scattered light. Then, the control element 11 measures the amount of dust according to the light amount of the scattered light.

The gas sensor 26 is disposed in an area adjacent to the inlet 31 of the housing 20 or 30 so that the concentration of the gas contained in the air introduced through the inlet 31 .

At this time, the gas sensor 26 is provided therein with a heater (to be described later), and the detected object (to be described later) is heated by the heater. The heating temperature of the sensing object depends on the type of gas detected by the gas sensor 26. The heating temperature of the sensed object will be described in more detail below.

The gas sensor 26 generates a rising air current by generating heat of joule of the heater for heating the inside of the sensor, thereby raising the air containing particles in the receiving space. The raised air is discharged to the outside of the housing (20, 30) through the outlet (32) after moving to the dust detection area.

Referring to FIGS. 2 and 3, the gas sensor 26 may be mounted on the substrate 10 by a flip-chip method, or alternatively may be mounted on the substrate 10 by a wire bonding method.

FIG. 2 is a view showing a gas sensor 26 mounted by a flip chip method, and FIG. 3 is a view showing a gas sensor 26 mounted by a wire bonding method.

Referring to FIG. 2, a circuit pattern (not shown) electrically connected to the gas sensor 26 is disposed on a top surface of the substrate 10 at a position where the gas sensor 26 is to be mounted.

On the circuit pattern, an electrode 261 constituting the gas sensor 26 is disposed. At this time, the electrode 261 directly contacts the circuit pattern, and is disposed on the circuit pattern.

Accordingly, the gas sensor 26 is mounted on the substrate with the electrode 261 disposed so as to face downward (substrate direction).

3, a circuit pattern (not shown) electrically connected to the gas sensor 26 is formed at a position spaced apart from the upper surface of the substrate 10 by a predetermined distance based on a position where the gas sensor 26 is to be mounted Is disposed.

A gas sensor 26 is disposed on an upper surface of the substrate 10 at a predetermined distance from the circuit pattern. At this time, the gas sensor 26 is mounted on the substrate 10 in a state where the electrode 262 is arranged to face upward.

Accordingly, a connection member 263, one end of which is connected to the electrode 262, and the other end of which is connected to the circuit pattern, is further disposed on the substrate 10.

According to the sensor device of the present invention as described above, dust concentration and gas concentration can be measured in one sensor device by integrating the separately provided dust sensor and gas sensor into one module.

Further, according to the sensor device, the gas sensor is disposed together in the housing in which the dust sensor is disposed, thereby minimizing the volume of the product by solving the spatial waste of arranging the plurality of sensors.

Further, according to the sensor device, it is possible to eliminate the heater required for the dust sensor by making the air convection necessary for the operation of the dust sensor possible by using the heater provided in the gas sensor, thereby reducing the cost of the product.

Hereinafter, the gas sensor 26 provided in the present invention will be described in more detail.

FIG. 4 is a sectional view of the gas sensor according to the first embodiment of the present invention shown in FIG. 1, and FIG. 5 is a plan view of the gas sensor shown in FIG.

4 and 5, the gas sensor 26A includes a substrate 110, an upper pad 120, a lower pad 125, a metal layer 130, a heater electrode 135, a sensing electrode 140, Water 145, a protective layer 150, and a connecting portion 155.

The substrate 110 is a supporting substrate of the gas sensor 26A on which the electrode pads are formed. The substrate 110 includes an insulating plate, and may be a ceramic substrate.

Preferably, the substrate 110 may be a ceramic substrate comprising alumina, silicon oxide (SiO 2), or silicon nitride (SiN).

On the substrate 110, an upper pad 120 is disposed.

The upper pad 120 may be formed by a conventional manufacturing process of a printed circuit board such as an additive process, a subtractive process, an MSAP (Modified Semi Additive Process), and a SAP (Semi Additive Process) And a detailed description thereof will be omitted here.

The upper pads 120 are disposed on the substrate 110 at predetermined intervals.

5, the upper pad 120 may include a first upper electrode pad 121, a second upper electrode pad 122, a third upper electrode pad 123, (Not shown).

The two upper electrode pads of the first to fourth upper electrode pads 121, 122, 123 and 124 are connected to the heater electrode 135 and the remaining two upper electrode pads are connected to the sensing electrode 140 do. In other words, the first upper electrode pad 121 and the second upper electrode pad 122 are sensing electrode pads connected to the sensing electrode 140, and the third upper electrode pad 123 and the fourth upper electrode pad 124 is a heater electrode pad connected to the heater electrode 135. [

At this time, the first to fourth upper electrode pads 121, 122, 123, and 124 may be disposed at four corners of the substrate 110 having a plate shape. That is, the first to fourth upper electrode pads 121, 122, 123, and 124 are disposed on the outer periphery of the upper region of the substrate 110. Accordingly, the side surfaces of the first to fourth upper electrode pads 121, 122, 123, and 124 may be exposed to the outside of the substrate 110.

On the other hand, a lower pad 125 is disposed under the substrate 110.

In other words, the upper pad 120 is disposed on the upper surface of the substrate 110, and the lower pad 125 is disposed on the lower surface of the substrate 110.

The lower pad 125 is an attachment pad for attaching the gas sensor 26A to the substrate 10 of the sensing device. More preferably, the lower pad 125 is a connection pad for electrically connecting the gas sensor 26A and the substrate 10 of the sensing device to each other.

For this, the lower pad 125 may be formed of a conductive material.

In other words, the lower pad 125 may be formed of at least one selected from gold (Au), silver (Ag), platinum (Pt), titanium (Ti), tin (Sn), copper (C) And may be formed of a metal material. The lower pad 125 may be at least one selected from gold (Au), silver (Ag), platinum (Pt), titanium (Ti), tin (Sn), copper (C) And may be formed of a paste or a solder paste containing one metal material. A metal layer 130 is disposed on the surface of the lower pad 125. The metal layer 130 is formed of a metal material that can increase the bonding force of the lower pad 125 while protecting the surface of the lower pad 125. Preferably, the metal layer 130 is formed of at least one metal selected from gold (Au), silver (Ag), platinum (Pt), titanium (Ti), tin (Sn), copper (C) As shown in FIG.

The lower pads 125 are disposed on the lower surface of the substrate 110 at predetermined intervals.

That is, the lower pad 125 may include first to fourth lower electrode pads (not shown).

The first lower electrode pad is electrically connected to the first upper electrode pad 121, the second lower electrode pad is electrically connected to the second upper electrode pad 122, and the third lower electrode pad And the fourth lower electrode pad is electrically connected to the fourth upper electrode pad 124. The fourth upper electrode pad 124 is electrically connected to the third upper electrode pad 123, In this case, the lower pads 125 may be disposed at the lower edge of the substrate 110, like the upper pads 120.

In addition, the metal layer 130 is disposed on the surfaces of the first to fourth lower electrode pads.

The connection part 155 penetrates the substrate 110 and has one end connected to the upper pad 120 and the other end connected to the lower pad 125.

In other words, the connection portion 155 is disposed through the substrate 110, thereby electrically connecting the upper pad 120 and the lower pad 125 to each other.

The connection part 155 may be formed by filling a conductive hole in a through hole (not shown) passing through the substrate 110.

The through-hole may be formed by any one of mechanical, laser, and chemical processing.

When the through holes are formed by machining, a method such as milling, drilling, and routing may be used. In the case where the through holes are formed by laser machining, UV or CO ₂ laser may be used When the substrate 110 is formed by chemical processing, the substrate 110 may be opened using a chemical containing aminosilane, ketones, or the like.

On the other hand, the processing by the laser is a cutting method in which a part of a material is melted and evaporated by concentrating optical energy on the surface to take a desired shape, and complicated formation by a computer program can be easily processed. Difficult composite materials can be processed.

In addition, the processing by the laser can have a cutting diameter of at least 0.005 mm, and has a wide range of thickness that can be processed.

As the laser processing drill, YAG (Yttrium Aluminum Garnet) laser, CO ₂ laser or ultraviolet (UV) laser is preferably used. The YAG laser is a laser capable of processing both the copper foil layer and the insulating layer, and the CO ₂ laser is a laser capable of processing only the insulating layer.

When the through hole is formed, the inside of the through hole is filled with a conductive material to form the connection portion 155. The connection part 155 is formed to electrically connect the upper pad 120 and the lower pad 125 to each other. The conductive material forming the connection part 155 may be any one material selected from among copper (Cu), silver (Ag), tin (Sn), gold (Au), nickel (Ni), and palladium The conductive material filling may be performed by any one of electroless plating, electrolytic plating, screen printing, sputtering, evaporation, ink jetting and dispensing, or a combination thereof.

The connecting portion 155 may be disposed on a side surface of the substrate 110 as will be described later so that the side surface of the connecting portion 155 may be exposed to the outside of the substrate 110.

A heater electrode 135 and a sensing electrode 140 are disposed on the substrate 110 to be connected to the upper pad 120, respectively.

The heater electrode 135 is a resistor which is disposed on the substrate 110 to generate heat and is made of platinum Pt, gold Au, tungsten W, palladium Pd, silicon Si, And a conductive metal oxide, and it is preferable that the metal is formed of platinum (Pt). Since the gas sensor 26A operates at a high temperature (for example, 250 to 300), a structure for raising the temperature is required. Accordingly, the heater electrode 135 is driven by a power source Joule Heat) to raise the temperature of the gas sensing module 100.

At this time, the gas sensing module 100 may be a gas sensing module that senses various types of gas, and the temperature at which the gas sensing module exhibits the optimal sensitivity varies depending on the type of the gas to be sensed.

Therefore, according to the present invention, it is possible to control the heat generated by the heater electrode 135 according to the type of gas to be sensed so that the gas sensor 26A is raised to a specific temperature that can exhibit the optimum sensitivity of the gas sensor 26A do. At this time, the temperature generated by the heater electrode 135 may be adjusted according to the magnitude of the applied power. Further, the width of the heater electrode 135 may be adjusted by changing the width or the length of the heater electrode 135.

At this time, the heater electrode 135 electrically connects the heater electrode disposed under the sensing object and the upper pad 120 to each other. At this time, the thickness of the portion of the heater electrode 135 disposed below the sensing object is thinner than the thickness of the portion of the heater electrode 135 connected to the upper pad 120. That is, the heater electrode 135 has a different thickness from a portion disposed on the substrate 110 and a portion disposed below the sensing object. As a result, the thickness of the heater electrode 135 gradually becomes thinner toward the position where the sensing object 145 is disposed, so that the heater electrode 135 at the portion where the sensing object 145 is disposed is positioned at a different position Is set to be lower than the resistance of the heater electrode of the disposed portion.

Accordingly, the heater electrode 135 disposed below the sensing object generates a higher temperature than the heater electrode of the other sensing object 145 to heat the sensing object 145.

The sensing electrode 140 may include a first sensing electrode 140A and a second sensing electrode 140B spaced apart from each other at a predetermined interval. The first sensing electrode 140A may be an electrode having a negative characteristic and the second sensing electrode 140B may be a positive electrode.

The sensing material 145 may be composed of a metal oxide on the sensing electrode 140, and the resistance of the metal oxide may be changed due to adsorption of the gas. In addition, the sensing object 145 may be disposed on the heater electrode 135 as well as the sensing electrode 140. The sensing electrode 140 measures a resistance change due to the gas adsorbed on the sensing object 145.

The sensing electrode 140 may be formed of gold (Au) or platinum (Pt). The sensing electrode 140 may be directly disposed on the substrate 110.

At this time, the sensing electrode 140 is electrically connected to the upper pad 120 and senses gas vaporized by the heater electrode 135 at a portion where the sensing object 145 is disposed.

That is, a portion of the sensing electrode 140 disposed under the sensing object is covered with the sensing object 145, and thereby senses gas vaporized by the heater electrode 135.

The sensing material 145 may include at least one of metal oxides (MxOy), gold nanoparticles, graphene, carbon nanotubes, fullerene, and molybdenum disulfide (MoS2) have. For example, the metal oxide (MxOy) may be at least one selected from the group consisting of tungsten oxide (WOx), tin oxide (SnOx), zinc oxide (ZnOx), indium oxide (InOx), titanium oxide (TiOx), gallium oxide (GaOx) and cobalt oxide ) May be combined at a certain ratio, but the present invention is not limited thereto. In another embodiment, the metal oxide (MxOy) is at least one metal selected from platinum (Pt), gold (Au), tungsten (W), rhodium (Rh) and palladium (Pd) And may further comprise a metal oxide (MxOy) as auxiliary particles.

At this time, the metal oxide (MxOy) may be nanoparticles having an average diameter ranging from 1 nm to 500 nm. The metal oxide may be a thin film having a columnar structure formed of nano pillars.

The contact force of the nanoparticles with the sensing electrode 140 can be greatly improved and the change in electrical resistance due to the gas contacted to the sensing object 145 can be more sensitively checked. Also, since the nanoparticles have large surface area and large electrical change due to external influences, the operating temperature of the gas sensor 26A can be greatly reduced.

A protective layer 150 is formed on the substrate 110.

The passivation layer 150 covers the upper pad 120, the heater electrode 135 and the sensing electrode 140 disposed on the substrate 110.

The protective layer 150 may be formed on a region other than the sensing object 145 disposed on the sensing electrode 140, that is, a portion of the sensing electrode 140 not covered by the sensing object 145, The upper electrode 120, and the upper surface of the substrate 110. The heater electrode 135 is formed on the upper surface of the substrate 110,

At this time, the protective layer 150 may be a layer formed of glass or oxide, and preferably has a low thermal conductivity to prevent the heat generated from the heater electrode 135 from being emitted to the outside. .

Although the upper pad 120 and the connecting portion 155 are shown to have a rectangular shape in the drawing, the upper pad 120 and the connecting portion 155 may have a rectangular shape only But may have any one of a circular shape, an elliptical shape, a fan shape, and a polygonal shape.

FIG. 6 is a sectional view of a gas sensor according to a second embodiment of the present invention shown in FIG. 1. FIG.

6, the gas sensor 26B includes a substrate 110, an intermediate layer 115, an upper pad 120, a lower pad 125, a metal layer 130, a heater electrode 135, a sensing electrode 140, A sensing material 145, a protective layer 150, and a connection part 155. [

Here, the structure of the gas sensor 26B except for the intermediate layer 115 is the same as the structure of the gas sensor 26A described with reference to FIG. 4, and a description thereof will be omitted.

In the gas sensor 26B, an intermediate layer 115 may be disposed on the substrate 110.

The intermediate layer 115 is formed of a material having a low thermal conductivity so that heat generated by the heater electrode 135 is not emitted to the outside. In other words, the intermediate layer 115 functions as a heat insulating portion to prevent heat generated in the heater electrode 135 from being emitted to the outside.

For this purpose, the intermediate layer 115 may be disposed under the heater electrode 135. Preferably, the intermediate layer 115 may be disposed in a sensing region (an area where the sensing object 145 rises) of the upper region of the substrate 110.

The heater electrode 135 is disposed on the intermediate layer 115 disposed in the sensing region of the substrate 110. That is, an area of the upper portion of the substrate 110 where the intermediate layer 115 is disposed may be a sensing area, and an area excluding the area where the intermediate layer 115 is disposed (in other words, May be a peripheral region.

At this time, the thickness of the portion of the heater electrode 135 disposed on the intermediate layer 115 may be thinner than the thickness of the portion of the heater electrode 135 connected to the upper pad 120. That is, the heater electrode 135 may have a thickness different from that of the portion disposed on the substrate 110 and a portion disposed on the intermediate layer 115. As a result, the thickness of the heater electrode 135 gradually becomes thinner toward the position where the sensing object 145 is disposed, so that the heater electrode 135 at the portion where the sensing object 145 is disposed is positioned at a different position Is set to be lower than the resistance of the heater electrode of the disposed portion. In addition, the heater electrodes 135 may have different densities at the portions disposed in the sensing object 145, and thus the resistance values may vary according to the regions.

Therefore, the heater electrode 135 disposed on the intermediate layer 115 generates a higher temperature than the heater electrode of the other portion to heat the detected object 145.

The intermediate layer 115 may be a layer formed of glass or an oxide and is preferably formed of a material having a low thermal conductivity to prevent heat generated from the heater electrode 135 from being emitted to the outside. .

FIG. 7 is a cross-sectional view of a gas sensor according to a third embodiment of the present invention shown in FIG. 1. FIG.

Here, the structure of the gas sensor 26C shown in FIG. 7 other than the gap 160 formed in the substrate is the same as that of the gas sensor 26A described in FIG. 6, Is omitted.

A cavity 160 is formed in the substrate 110. The gap 160 is disposed around the sensing area.

Preferably, the gap 160 is formed from the upper surface of the protective layer 150 to the lower surface of the substrate 110. The gap 160 surrounds the sensing region to prevent heat transfer between the sensing region and the surrounding region.

Here, the sensing region may be a region in which the intermediate layer 115 is disposed. As described above, when the intermediate layer 115 is provided, the sensing region is defined as a peripheral region of the intermediate layer 125. However, when the intermediate layer 125 is not provided, 145). Hereinafter, the case where the intermediate layer 115 is formed will be described.

Accordingly, the air gap 160 is disposed in the peripheral region of the intermediate layer 115. At this time, if the gap 160 is formed over the entire area of the substrate 110 and the protective layer 150, the coupling strength between the sensing region including the intermediate layer 115 and the peripheral region is weakened .

Accordingly, the gap 160 may include a plurality of unit voids surrounding the circumferential region spaced apart from the intermediate layer 115 by a predetermined distance. In addition, a portion of the substrate 110 between the plurality of unit voids is not removed, thereby improving the connection strength between the sensing region and the peripheral region.

The gap 160 is formed not only through the substrate 110 but also through the protective layer 150 disposed on the substrate 110 together with the substrate 110. Therefore, a heat shielding region is formed by the gap 160 from the region of the protection layer 150 to the region of the substrate 110. Wherein the heat blocking region blocks heat transfer between the sensing region and the peripheral region so that heat generated in the sensing region is not transmitted to the sensing region, .

The gap 160 may be formed by opening the substrate 110 and the protective layer 150 by any one of mechanical, laser, and chemical processing.

As described above, according to the embodiment of the present invention, by forming a plurality of voids in the periphery of the sensed object, the external heat transmitted to the sensed object can be blocked, and accordingly, It is possible to improve the operational reliability of the sensor by eliminating the occurrence of the gas sensing error phenomenon.

In addition, according to the embodiment of the present invention, since the heat of the sensed object is not emitted to the outside by the gap, the sensed object can be maintained at a high temperature at all times, and the power consumption for maintaining the sensed object at a constant temperature Can be minimized.

FIG. 8 is a cross-sectional view of a gas sensor according to a fourth embodiment of the present invention shown in FIG. 1. FIG.

8, the gas sensor 26D includes a substrate 110, an intermediate layer 115, an upper pad 120, a lower pad 125, a metal layer 130, a heater electrode 135, a sensing electrode 140 ), A detection substance 145, a protective layer 150, and a connection portion 155A.

The gas sensor 26D shown in Fig. 8 has the same configuration except for the gas sensor shown in Fig. 7 and the connecting portion 155A. Accordingly, a detailed description of other components except for the connection portion 155A will be omitted.

The connection part 155A passes through the substrate 110 and has one end connected to the upper pad 120 and the other end connected to the lower pad 125. [

In other words, the connection portion 155A is disposed through the substrate 110, thereby electrically connecting the upper pad 120 and the lower pad 125 to each other.

The connection portion 155A may be formed by filling a conductive hole in a through hole (not shown) passing through the substrate 110. [

At this time, the through hole may be formed in the outer portion of the substrate 110. In other words, the through holes may be formed in the edge regions of the substrate 110, respectively. Therefore, the through hole is formed on the outer surface of the substrate 110 and exposed to the outside of the substrate 110.

Accordingly, the connection part 155A may be formed on the outer edge of the substrate 110, and may be disposed on an edge of the substrate 110, respectively. Accordingly, a part of the connection portion 155A is exposed to the outside of the substrate 110. [ At this time, the exposed portion is the upper surface or the lower surface of the connection portion 155A.

The upper pad 120 includes a first upper pad 121, a second upper pad 122, a third upper pad 123, and a fourth upper pad 124.

The two upper pads of the first through fourth upper pads 121, 122, 123 and 124 are connected to the heater electrode 135 and the remaining two upper pads are connected to the sensing electrode 140. In other words, the first upper pad 121 and the second upper pad 122 are sensing pads connected to the sensing electrode 140, and the third upper pad 123 and the fourth upper pad 124 are connected to the heater electrode (135).

The first to fourth upper pads 121, 122, 123, and 124 may be disposed at four corners of the substrate 110 having a plate shape. That is, the first to fourth upper pads 121, 122, 123, and 124 are disposed in the outer portion of the upper region of the substrate 110. Accordingly, the side surfaces of the first to fourth upper pads 121, 122, 123, and 124 may be exposed to the outside of the substrate 110.

As described above, the penetrating electrode such as the connecting portion 155A is disposed in the outer frame portion of the substrate so that a part of the penetrating electrode is exposed to the outside, so that the area ratio of the entire penetrating electrode can be reduced, It is possible to reduce the amount of the conductive material or the conductive paste used.

Meanwhile, the gas sensor 26 may have a membrane structure or a bridge structure rather than an integrated substrate structure as shown in FIGS.

FIG. 9 is a sectional view of a gas sensor according to a fifth embodiment of the present invention shown in FIG. 1. FIG.

The gas sensor 26E shown in Fig. 9 has a one-layer membrane structure.

9, the gas sensor 26E includes a substrate 210, an electrode pad 220, a heater electrode 235, a sensing electrode 240, and a sensing material 245.

The substrate 210 has a structure in which an insulating plate 211, a first silicon oxide thin film 212, a silicon nitride thin film 213, and a second silicon oxide thin film 213 are sequentially stacked.

The insulating plate 211 may be a silicon substrate used in a general semiconductor process and may be formed of a material such as aluminum oxide (Al ₂ O ₃ ), magnesium oxide (MgO), quartz, gallium-nitrogen (GaN) GaAs) doped substrate may be used.

Meanwhile, a lower region of the insulating plate 211 corresponding to a region where the heater electrode 235 and the sensing electrode 240 are disposed is etched and removed.

At this time, when the insulating plate 211 is etched, a dry etching process using a photoresist pattern may be used.

The first silicon oxide thin film 212, the silicon nitride thin film 213 and the second silicon oxide thin film 214 form a membrane and are sequentially stacked on the insulating plate 211.

The membrane serves as an etch stop layer when etching the lower region of the insulating plate 211 and serves as a support for the sensing electrode 240 and the heater electrode 235. The membrane may be formed of a silicon oxide thin film or a silicon nitride thin film or may be a laminated structure of a silicon oxide thin film and a silicon nitride thin film to prevent deformation of the device due to heat generation when the heater electrode 235 is heated. .

In this figure, a membrane is shown formed by a laminated structure of a first silicon oxide thin film 212, a silicon nitride thin film 213 and a second silicon oxide thin film 214, and thus the membrane is oxidized It is preferable to form the silicon thin film and the silicon nitride thin film having the elongation stress with the structure shown in Fig. Of course, the membrane may consist of only one of these thin films.

The membrane may be formed by a method such as thermal oxidation, sputtering or chemical vapor deposition

An electrode pad 220 is disposed on the second silicon oxide thin film 214. As described above, the electrode pad 220 may include a plurality of electrode pads, and preferably four electrode pads.

A heater electrode 235 and a sensing electrode 240 are disposed on the second silicon oxide thin film 214, respectively.

A sensing material 245 is disposed on the second silicon oxide thin film 214 to cover the sensing electrode 240.

In addition, the lower region of the insulating plate 211 is removed by etching as described above. 7 and 8, a gap (not shown) may be formed in the insulation plate 211, and the gap may be formed between the first silicon oxide thin film 212, the silicon nitride thin film 213 And the second oxide silicon thin film 214 and may be connected to the lower region of the removed insulating plate 211. [

FIG. 10 is a sectional view of a gas sensor according to a sixth embodiment of the present invention shown in FIG. 1. FIG.

The gas sensor 26F shown in Fig. 10 has a two-layer membrane structure.

10, the gas sensor 26 includes a substrate 310, a protective layer 315, an electrode pad 320, a heater electrode 335, a sensing electrode 340, and a sensing material 345.

The substrate 310 has a structure in which an insulating plate 311, a first silicon oxide thin film 312, a silicon nitride thin film 313, and a second silicon oxide thin film 313 are sequentially stacked.

The insulating plate 311 may be a silicon substrate used in a general semiconductor process and may be made of aluminum oxide (Al ₂ O ₃ ), magnesium oxide (MgO), quartz, gallium-nitrogen (GaN) GaAs) doped substrate may be used.

Meanwhile, a lower region of the insulating plate 311 corresponding to a region where the heater electrode 335 and the sensing electrode 340 are disposed is etched and removed.

At this time, when the insulating plate 311 is etched, a dry etching process using a photoresist pattern may be used.

The first silicon oxide thin film 312, the silicon nitride thin film 313 and the second silicon oxide thin film 314 form a membrane and are sequentially stacked on the insulating plate 311.

The membrane serves as an etch stop layer when etching the lower region of the insulating plate 311 and serves as a support for the sensing electrode 340 and the heater electrode 335. In addition, the membrane is provided to prevent the deformation of the device due to heat generated when the heater electrode 335 is heated. The membrane may be formed of a silicon oxide thin film or a silicon nitride thin film, or may be a laminated structure of a silicon oxide thin film and a silicon nitride thin film .

The membrane may be formed by a method such as thermal oxidation, sputtering or chemical vapor deposition

An electrode pad 320 is disposed on the second silicon oxide thin film 314.

The electrode pad 220 may include a plurality of electrode pads as described above. The electrode pad 320 disposed on the second silicon oxide thin film 314 is an electrode pad connected to the heater electrode 335.

A heater electrode 335 is disposed on the second silicon oxide thin film 314.

A protective layer 315 is disposed on the second silicon oxide thin film 314 to cover the heater electrode 335.

A sensing electrode 340 and an electrode pad 320 electrically connected to the sensing electrode 340 are disposed on the passivation layer 315.

A sensing material 335 is disposed on the protective layer 315 to cover the sensing electrode 340.

FIG. 11 is a cross-sectional view of a gas sensor according to a seventh embodiment of the present invention shown in FIG. 1. FIG.

The gas sensor 26 shown in Fig. 11 has a bridge structure.

11, the gas sensor 26G includes a substrate 410, an electrode pad 420, a heater electrode 435, a sensing electrode 440, a protective layer 415, a bridge portion 470, 445).

The substrate 410 has a structure in which an insulating plate 411, a first silicon oxide thin film 412, a silicon nitride thin film 413, and a second silicon oxide thin film 413 are sequentially stacked.

The insulating plate 411 may be a silicon substrate used in a general semiconductor process and may be made of aluminum oxide (Al2O3), magnesium oxide (MgO), quartz, gallium-nitrogen (GaN) A doped substrate may also be used.

On the other hand, the upper region of the insulating plate 411 corresponding to the region where the heater electrode 435 and the sensing electrode 440 are disposed is etched and removed.

At this time, when the insulating plate 411 is etched, a dry etching process using a photoresist pattern may be used.

The first silicon oxide thin film 412, the silicon nitride thin film 413 and the second silicon oxide thin film 414 form a membrane and are sequentially stacked on the insulating plate 411.

The membrane serves as a support for the sensing electrode 440 and the heater electrode 435. In addition, the membrane is used to prevent deformation of the device due to heat generated when the heater electrode 435 is heated. The membrane may be formed of a silicon oxide thin film or a silicon nitride thin film, or may be a laminated structure of a silicon oxide thin film and a silicon nitride thin film .

On the second silicon oxide thin film 414, an electrode pad 420 is disposed. The electrode pad 420 may include a plurality of electrode pads, and preferably four electrode pads.

A heater electrode 435 and a sensing electrode 440 are disposed on the second silicon oxide thin film 414, respectively.

A protective layer 415 is formed on the second silicon oxide thin film 414 to cover the heater electrode 435.

A sensing material 445 is disposed on the second silicon oxide thin film 414 to cover the protective layer 415 and the sensing electrode 440.

In addition, a bridge portion 470 including a bridge for floating the region where the detection object 445 is formed is formed on the substrate 410.

On the other hand, in order to generate the upward flow in the housings 20 and 30 by the heat radiated from the gas sensor 26, the amount of heat in the gas sensor 26 must be secured to some extent.

At this time, when the gas sensor 26 detects only one gas, it may not be possible to generate sufficient discharge heat for generating the upward flow. Accordingly, in the present invention, a gas sensor having an array structure capable of sensing a plurality of different gases is applied to detect a plurality of different gases through the array gas sensor, and sufficient heat emission for generating the upward flow .

In the meantime, in the present invention, it is possible to provide a sensor for sensing a plurality of different gases by using one gas sensor 26, and alternatively, a plurality of gas sensors 26 may be arranged in an array manner, A sensor device for sensing other gases may also be provided.

12 is a cross-sectional view of a gas sensor according to an eighth embodiment of the present invention shown in FIG.

Referring to FIG. 12, the gas sensor 26H includes a substrate 510, an upper pad 520, a lower pad 525, a metal layer 530, a heater electrode 535, a sensing electrode 540, , A protective layer 550, and a connection portion 555

And, the gas sensor 26H includes a dividing gap 570. [

The dividing void 570 is formed through the sensing object 545 and the substrate 510 and is disposed at a position where the sensing object 545 is formed.

However, the divided cavity 570 may have a non-penetrating shape. In addition, the divided cavity 570 may have a through-hole shape, and the divided cavity 570 may have a non- The material may be filled. This will be described in more detail below.

Meanwhile, the substrate 510, the upper pad 520, the lower pad 525, the metal layer 530, the heater electrode 535, the sensing electrode 540, the sensing material 545, the protection layer 550, The basic structure of the optical fiber 555 has already been described with reference to FIG. 4, so a detailed description thereof will be omitted.

The number of the upper pads 520 is determined by the number of sensing areas separated by the sensing object 545 to be described later.

For example, when the sensing object 545 is divided into a first sensing area and a second sensing area, the upper pad 520 is connected to a pair of sensing electrodes 540 disposed in the first sensing area A pair of first upper pads, a pair of second upper pads connected to a pair of sensing electrodes 540 disposed in the second sensing region, and a pair of second upper pads connected to the first sensing region and the second sensing region, And a pair of third upper pads connected to the electrodes.

That is, when the sensing object 545 is divided into the first and second sensing areas, the upper pad 520 includes a first upper pad 520a, a second upper pad 520b, a third upper pad 520c, A fourth upper pad 520d, a fifth upper pad 520e, and a sixth upper pad 520f.

The two upper pads of the first through sixth upper pads 520a, 520b, 520c, 520d, 520e and 520f are heater electrode pads connected to one heater electrode, And the other two upper pads are second sensing electrode pads connected to the sensing electrodes disposed in the second sensing area.

At this time, the heater electrode 535 in the present invention may be a common heater electrode 535. That is, the sensing object 545 in the present invention is divided into a plurality of sensing areas. The sensing electrodes 540 are disposed in the plurality of sensing areas.

Here, in the general gas sensor structure, the heater electrodes 535 are disposed independently in the plurality of sensing regions together with the sensing electrodes 540 disposed in the plurality of sensing regions.

However, in the present invention, one common heater electrode 535 is disposed in the plurality of sensing regions as described above. Hereinafter, the heater electrode 535 will be described as a common heater electrode 535.

At this time, the common heater electrode 535 is disposed on the first sensing region and the second sensing region, and both ends are connected to the upper pad 520.

The common heater electrode 535 includes a first heating portion disposed on the first sensing region and a second heating portion disposed on the second sensing region. The first heating unit and the second heating unit are connected to each other, and both ends of the first and second heating units are connected to the pair of upper pads 520.

Meanwhile, as described above, the gas sensing module is different in temperature conditions required depending on the type of gas to be sensed. The common heater electrode 535 generates heat commonly to the first sensing region and the second sensing region, which require different temperature conditions.

At this time, if the resistance conditions of the first heating portion formed in the first sensing region and the second heating portion formed in the second sensing region are the same, only the same gas in the first sensing region and the second sensing region Can be detected.

Therefore, in the present invention, the resistance value of the first heating portion and the resistance value of the second heating portion are different from each other, and the heat generated by the first heating portion and the heat generated by the second heating portion So that the heat generated in the parts is different from each other.

At this time, the resistance value is changed according to the density change of the common heater electrode 535 according to an embodiment of the present invention. In other words, the density of the first heating portion of the common heater electrode 535 differs from the density of the second heating portion, so that the resistance value of the first heating portion and the resistance value of the second heating portion are different from each other.

That is, in the present invention, a plurality of different gases are sensed by using one identical sensing object. The common heater electrode 535 may change the resistance value of the common heater electrode 535 through the density change as described above, and may apply different temperatures to the same sensing object. At this time, the resistance value of the heater electrode 535 can be changed by a method such as a density change, a material change, a line width, a line thickness, and a length of an electrode line.

Here, the density may mean a length. That is, the length of the first heating portion disposed in the first region of the sensing object 545 is different from the length of the second heating portion disposed in the second region. More specifically, the length of the heater electrode disposed in the first heating unit may be longer than the length of the heater electrode disposed in the second heating unit.

For example, the sensing material disposed on the first sensing area of the common heater electrode 535 may have a temperature of 200 ° C, and the sensing material disposed on the second sensing area may have a temperature of 250 ° C Lt; / RTI >

That is, in the present invention, the density of the electrodes disposed on the respective sensing regions is made different from that of one common heater electrode 535, so that the detected substances on the respective sensing regions under different voltage .

At this time, the sensing electrodes 540 are respectively disposed on the sensing regions separated by the sensing object 545. 13, when the sensing area is divided into the first sensing area A1 and the second sensing area A2, the sensing electrode 540 is formed on the first sensing area A1 A pair of first sensing electrodes 540a and 540b disposed on the second sensing area A2 and a pair of second sensing electrodes 540c and 540d disposed on the second sensing area A2.

The pair of first sensing electrodes 540a and 540b and the pair of second sensing electrodes 540c and 540d are covered with the same sensing material 545 and the common heater electrode 535 And detects the vaporized gas.

At this time, the temperature of the sensed object disposed on the first sensing area A1 and the sensed object disposed on the second sensing area A1 are changed in accordance with the change in resistance according to the density change of the common heater electrode 535 Temperatures are different. Accordingly, the first sensing electrodes 540a and 540b are covered by the sensing material having the first temperature, and the second sensing electrodes 540c and 540d are covered with the sensing material having the second temperature different from the first temperature. . More specifically, the sensing object 545 includes a first portion disposed on the first sensing region and a second portion disposed on the second sensing region, wherein the temperature of the first portion and the temperature of the second portion The temperature of the part is different.

Accordingly, since the temperatures of the detected substances 545 are different from each other, the degrees of reactivity of the gases in the respective regions are also different from each other. Each of the pair of first sensing electrodes 540a and 540b and the pair of second sensing electrodes 540c and 540d may be formed by a gas vaporized at different temperatures in the first sensing area and the second sensing area Different gases can be detected corresponding to the degree of reactivity of the detected substance.

The sensing material 545 may include at least one of metal oxide, gold nanoparticle, graphene, carbon nanotube, fullerene, and molybdenum disulfide (MoS2). For example, the metal oxide may be selected from the group consisting of tungsten oxide (WOx), tin oxide (SnOx), zinc oxide (ZnOx), indium oxide (InOx), titanium oxide (TiOx), gallium oxide (GaOx) and cobalt oxide Or more may be combined at a certain ratio, but the present invention is not limited thereto. In another embodiment, the metal oxide is platinum (Pt), gold (Au), tungsten (W), rhodium (Rh) and palladium (Pd) of the at least one metal or aluminum oxide (Al ₂ O ₃₎ such as The metal oxide may further be included as auxiliary particles. At this time, the metal oxide may be nanoparticles having an average diameter ranging from 1 nm to 500 nm. The metal oxide may be a thin film having a columnar structure formed of nano pillars.

And, the sensing object 545 includes the dividing space 570. The divided voids 570 are formed to divide the sensing object 545 into a plurality of sensing regions. The dividing air gap 570 penetrates the sensing object 545. At this time, the width of the divided void 570 is smaller than the width of the detected object 545 at the position where the divided void 570 is formed. Specifically, the dividing void 570 divides the sensing object 545 with a distance of 80 to 95% of the length of a center line passing through the center of the sensing area, Area. In other words, the dividing gap 570 has a distance of 80 to 95% of the length of the center line passing through the center point of the sensing object 545, and divides the sensing object 545 into a plurality of sensing areas.

 Accordingly, the sensing object 545 is divided into the first portion of the first sensing region and the second portion of the second sensing region about the divisional space 570, but the sensing portion 545 of the first portion and the second portion At least some of them are connected to each other.

As described above, in the present invention, the first portion and the second portion of the sensing object 545 are connected to each other so that the common heater electrode 535 is connected to the lower substrate 510 So that the mechanical rigidity can be increased.

As described above, according to the present invention, by providing the gas sensor capable of measuring multi gas using a single heater electrode, it is possible to simultaneously measure a plurality of multi gas due to common use of the heater, The power consumption according to the present invention can be minimized.

Fig. 14 is a view showing a first modified structure of the gas senes shown in Fig. 13. Fig.

14, the portion of the gas sensor 261 where the upper pad 620, the sensing electrode 640, the common heater electrode 635, the sensing object 645, and the dividing air gap 670 are formed It is the same as the example.

14, the detection area of the sensing object 645 is divided into three areas instead of the two areas. Accordingly, the arrangement of the upper pad, the water, the common heater electrode, Which is different from the embodiment.

First, the sensing object 645 is divided into a first sensing area A1, a second sensing area A2, and a third sensing area A3, whereby the dividing space 670 is also divided into the sensing object 645 ) Are divided into three regions.

The upper pad 620 may include a first upper pad 620a, a second upper pad 620b, a third upper pad 620c, a fourth upper pad 620d, a fifth upper pad 620e, 6 upper pad 620f, a seventh upper pad 620g, and an eighth upper pad 620h.

The first upper pad 620a and the second upper pad 620b are connected to the sensing electrodes disposed on the first sensing area A1.

The third upper pad 620c and the fourth upper pad 620d are connected to the sensing electrodes disposed on the second sensing area A2.

The fifth upper pad 620e and the sixth upper pad 620f are connected to the sensing electrodes disposed on the third sensing area A3.

The seventh upper pad 620g and the eighth upper pad 620h are connected to a common heater electrode 635 commonly disposed in the first through third sensing areas.

The sensing electrode 640 may include a first sensing electrode 640a, a second sensing electrode 640b, a third sensing electrode 640c, a fourth sensing electrode 640d, a fifth sensing electrode 640e, 6 sensing electrodes 640f.

The first sensing electrode 640a and the second sensing electrode 640b are disposed on the first sensing area A1. The first sensing electrode 640a and the second sensing electrode 640b are connected to the first upper pad 620a and the second upper pad 620b, respectively.

The third sensing electrode 640c and the fourth sensing electrode 640d are disposed on the second sensing area A2. The third sensing electrode 640c and the fourth sensing electrode 640d are connected to the third upper pad 620c and the fourth upper pad 620d, respectively.

In addition, the fifth sensing electrode 640e and the sixth sensing electrode 640f are disposed on the third sensing area A3. The fifth sensing electrode 640e and the sixth sensing electrode 640f are connected to the fifth upper pad 620e and the sixth upper pad 620f, respectively.

Also, as shown in the figure, the sensed object 645 disposed on each of the sensing areas may be connected to a part of the sensed object. Specifically, the ends of the detections disposed on the respective sensing areas of the sensing object 645 may be connected to each other.

As described above, in the first modification, the sensing object 645 can be divided into three sensing regions, and one common heater electrode 635 can be disposed on each of the sensing regions. The common heater electrode 635 may be divided into first to third portions arranged on the respective sensing regions, and the first to third portions may have different resistances by applying different densities. have.

Fig. 15 is a view showing a second modified structure of the gas sensor shown in Fig. 13. Fig. 15, the portion where the upper pad 720, the sensing electrode 740, the common heater electrode 735, the sensing object 745, and the dividing air gap 770 are formed is the same as that of the previous embodiment .

15, the sensing region of the sensing object 745 is divided into four regions instead of the three regions, so that the arrangement of the upper pad, the water, the common heater electrode, and the shape of the division void 770 are shifted Which is different from the embodiment.

First, the sensing object 745 is divided into a first sensing area A1, a second sensing area A2, a third sensing area A3, and a fourth sensing area A4, 770 also have a shape for separating the sensed object 745 into four regions. Preferably, the dividing void 770 may have a cross shape.

The upper pad 720 may include a first upper pad 720a, a second upper pad 720b, a third upper pad 720c, a fourth upper pad 720d, a fifth upper pad 720e, 6 upper pad 720f, a seventh upper pad 720g, an eighth upper pad 720h, a ninth upper pad 720i and a tenth upper pad 720j.

The first upper pad 720a and the second upper pad 720b are connected to the sensing electrodes disposed on the first sensing area A1.

The third upper pad 720c and the fourth upper pad 720d are connected to the sensing electrodes disposed on the second sensing area A2.

The fifth upper pad 720e and the sixth upper pad 720f are connected to the sensing electrodes disposed on the third sensing area A3.

The seventh upper pad 720g and the eighth upper pad 720h are disposed on the fourth sensing area A4.

The ninth upper pad 720i and the tenth upper pad 720j are connected to a common heater electrode 735 commonly disposed in the first to fourth sensing areas A1 to A4.

The sensing electrode 740 may include a first sensing electrode 740a, a second sensing electrode 740b, a third sensing electrode 740c, a fourth sensing electrode 740d, a fifth sensing electrode 740e, A sixth sensing electrode 740f, a seventh sensing electrode 740g, and an eighth sensing electrode 740h.

The first sensing electrode 740a and the second sensing electrode 740b are disposed on the first sensing area A1. The first sensing electrode 740a and the second sensing electrode 740b are connected to the first upper pad 720a and the second upper pad 720b, respectively.

The third sensing electrode 740c and the fourth sensing electrode 740d are disposed on the second sensing area A2. The third sensing electrode 740c and the fourth sensing electrode 740d are connected to the third upper pad 720c and the fourth upper pad 720d, respectively.

In addition, the fifth sensing electrode 740e and the sixth sensing electrode 740f are disposed on the third sensing region A3. The fifth sensing electrode 740e and the sixth sensing electrode 740f are connected to the fifth upper pad 720e and the sixth upper pad 720f, respectively.

In addition, the seventh sensing electrode 740g and the eighth sensing electrode 740h are disposed on the fourth sensing area A4. The seventh sensing electrode 740g and the eighth sensing electrode 740h are connected to the seventh upper pad 720g and the eighth upper pad 720h, respectively.

In addition, as shown in the figure, the ends of the sensing object 745 disposed on the respective sensing areas may be connected to each other, so that the supporting area S may be formed on the upper substrate.

As described above, in the second modification, the sensing object 745 can be divided into four sensing regions, and one common electrode 735 can be disposed on each sensing region. The common heater electrode 735 may be divided into first to fourth portions disposed on the respective sensing regions, and the first to fourth portions may have different resistances by applying different densities. have.

In the present invention, when the sensing region is divided into four regions, each region may have a different temperature through a change in resistance value of the common heater electrode. For example, .

The first sensing area The second sensing area Third sensing area Fourth sensing area Temperature condition 200 ℃ 250 ℃ 300 ° C 350 ℃ Sensing gas ethanol HCHO toluene Hydrogen

As described above, in the present invention, the sensing object may be divided into four regions, and common heater electrodes having different densities in the divided regions may be disposed.

Thus, a sensing condition that reacts with ethanol in the first sensing region, a sensing condition that reacts with HCHO in the second sensing region, a sensing condition that reacts with toluene in the third sensing region, In the sensing region, a sensing condition that reacts with hydrogen can be formed. Here, the sensing conditions formed in the sensing areas may be changed, and the types of gas sensed in the sensing areas may be changed.

16 is a view showing an example of the resistance change of the heater electrode according to the embodiment of the present invention.

13 to 15, according to the embodiment of the present invention, different resistance values are displayed for each region through the density change (or the length change) of the heater electrode.

Referring to FIG. 16, the heater electrodes 635 and 735 may have the same density in the respective regions.

However, the common heater electrodes 635 and 735 may have different widths and thicknesses of the electrodes disposed in the respective regions. At this time, if the line width or thickness of the common heater electrodes 635 and 735 decreases, the resistance value increases, and when the line width or thickness increases, the resistance value decreases accordingly.

That is, the resistance value is changed by changing the thickness or linewidth of each of the common heater electrodes 635 and 735 to form a sensing condition for reacting with ethanol in the first sensing region, and a sensing condition for reacting to HCHO in the second sensing region. Forming a sensing condition responsive to toluene in the third sensing region, and sensing conditions responsive to hydrogen in the fourth sensing region. Here, the sensing conditions formed in the sensing areas may be changed, and the types of gas sensed in the sensing areas may be changed.

That is, when the sensing area includes the first to fourth sensing areas, the common heater electrodes 635 and 735 may include a first heating part disposed on the first sensing area and a second heating part disposed on the second sensing area, A second heating unit disposed on the third sensing area, and a fourth heating unit disposed on the fourth sensing area.

The first heating unit may have a first width W1 and may be disposed on the first sensing area. The second heating portion may have a second width (W2) larger than the first width (W1) and may be disposed on the second sensing region. The third heating portion may have a third width W3 greater than the first width W1 and the second width W2 and may be disposed on the third sensing region. The fourth heating portion may have a fourth width (W4) larger than the first to third widths (W1, W2, W3).

As described above, the widths of the common heater electrodes 635 and 735 disposed in the respective regions may be differently applied so that the temperature generated in each region has a condition that reacts with the sensing gas.

In addition to the above change in density and line width, the resistance value can be changed by changing the material of the common heater electrodes 635 and 735 disposed in the respective regions. For example, the common heater electrodes 635 and 735 may be composed of platinum (Pt), tungsten (W), and graphene so that the common heater electrodes 635 and 735 on the first sensing area are platinum The common heater electrodes 635 and 735 on the second sensing area are made of tungsten and the common heater electrodes 635 and 735 on the third sensing area are made of graphene.

17 is a graph showing the relative adsorption amount according to the detected water temperature of the gas sensor.

Referring to FIG. 17, a change occurs in the kind and amount of the gas adsorbed according to the temperature of the detected substance.

That is, when the temperature of the sensed product is 100 ° C, the adsorption amount of CO gas is high. When the temperature of the sensed product is 250 ° C, the adsorption amount of alcohol gas is high. When the temperature of the sensed product is 300 ° C, When the temperature of the sensed object is 350 ° C, the adsorption amount of oxygen gas is high. When the temperature of the sensed object is 450 ° C, the adsorption amount of methane gas is high.

Therefore, in the present invention, the temperature on each sensing area of the sensing object changes according to the change of the heater electrode.

18 is a layout diagram of a gas sensor according to another embodiment of the present invention.

Referring to Fig. 18, the sensor device includes a substrate 10 and a housing 20,30. The housing 20 and 30 are disposed on the substrate 10 and include a first case 20 in which a dust sensor and a gas sensor are disposed and a second case 20 disposed on the first case 20, And a second case (30) covering the upper region of the second housing (20).

At this time, a plurality of gas sensors are arranged in an array form in the housing (20, 30). That is, the housing 20, 30 includes a first gas sensor 27A for sensing a first gas, a second gas sensor 27B for sensing a second gas, a third gas sensor 27B for sensing a third gas, A sensor 27C is disposed.

On the other hand, when a gas sensor having a plurality of gas sensor array structures is disposed as described above, a control element for controlling the respective gas sensors is required. At this time, a plurality of ASICs (Application Specific Integrated Circuits) connected to the respective gas sensors have been disposed. That is, when the gas sensor is composed of four gas sensors, four ASICs are required.

However, in the present invention, the plurality of gas sensors can be controlled using one integrated current control device and one integrated microcontroller (MCU) to reduce the product cost.

The integrated current control element controls a current supplied to each of the gas sensors so that the detected water temperature in each of the gas sensors corresponds to the detected gas.

In addition, the integrated MCU includes a signal processing algorithm, and receives signals sensed by the respective gas sensors, and detects gas concentrations according to signals sensed by the respective gas sensors using the signal processing algorithm .

As described above, in another embodiment of the present invention, a plurality of the gas sensors are arranged in an array form. At this time, the temperatures of the sensed objects of the respective gas sensors are different from each other, and thus the types of gases detected by the respective gas sensors are different from each other.

According to the present invention, as described above, a plurality of gas sensors are divided into a plurality of regions to detect a plurality of gas regions, or a plurality of gas sensors are arranged on the substrate in an array form, .

At this time, the temperatures of the detections in the respective gas sensors or the respective sensing areas are different from each other.

 In the present invention, the gas sensor does not perform a simple gas sensing operation but generates heat for air convection of the dust sensor. At this time, the air convection operation changes according to the heat emitted from the plurality of gas sensors.

Accordingly, in the present invention, the temperature of the sensed object of the gas sensor disposed near the inlet 31 is the lowest, and the temperature of the sensed object of the gas sensor disposed farthest from the inlet 31 is the lowest So that the reliability of the air convection operation can be ensured.

In the embodiment of the present invention, conventionally, the dust sensor and the gas sensor, which are separately provided, are integrated into one module, so that not only the dust amount but also the gas concentration can be measured in one sensor device.

In addition, according to the embodiment of the present invention, by arranging the gas sensor in the housing in which the dust sensor is disposed, the spatial waste in which the plurality of sensors are arranged can be solved, and the volume of the product can be minimized.

Further, according to the embodiment of the present invention, since the heater provided in the gas sensor enables the air convection necessary for the operation of the dust sensor to be performed, the heater required for the dust sensor can be eliminated, .

The features, structures, effects, and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

10: substrate
20, 30: housing
22:
23: Lens
25:
26: Gas sensor
110: substrate
120: upper pad
125: Lower pad
130: metal layer
135: heater electrode
140: sensing electrode
145: sensing layer
150: protective layer
155:

Claims (17)

Board;
A housing disposed on the substrate, the housing including an inlet, an outlet and an accommodation space;
A gas sensor disposed in the housing space of the housing; And
And a dust sensor disposed in the housing space of the housing,
The gas sensor comprises:
Sensing the gas contained in the air entering through the inlet of the housing,
In the dust sensor,
And detects the amount of dust contained in the air heated by the discharge heat of the gas sensor
Sensor package. The method according to claim 1,
The gas sensor comprises:
Disposed in an adjacent region of the inlet of the housing
Sensor package. The method according to claim 1,
In the dust sensor,
A light emitting portion for emitting light,
And a light receiving portion for collecting light generated in the light emitting portion
Sensor package. The method of claim 3,
The gas sensor comprises:
A rising air flow is generated so that the air moves to a dust detection area formed between the light emitting part and the light receiving part in the accommodation space
Sensor package. The method according to claim 1,
The gas sensor comprises:
A first gas sensor having a first sensing temperature,
And a second gas sensor having a second sensing temperature higher than the first sensing temperature,
Wherein the first gas sensor comprises:
And a second gas sensor disposed closer to the inlet side than the second gas sensor
Sensor package. 6. The method of claim 5,
An integrated current device disposed on the substrate and connected in common with the first and second gas sensors,
Further comprising an integrated control element disposed on the substrate and in common with the first and second gas sensors
Sensor package. The method according to claim 1,
The gas sensor comprises:
A sensor substrate,
A sensing electrode and a heater electrode disposed on the sensor substrate,
A sensing object disposed on the sensing electrode and the heater electrode,
And a top pad disposed on the sensor substrate and connected to the sensing electrode and the heater electrode,
Sensor package. 8. The method of claim 7,
The sensor substrate includes:
Including a ceramic substrate
Sensor package. 8. The method of claim 7,
The sensor substrate includes:
A silicon oxide film, and a silicon nitride film,
Sensor package. 8. The method of claim 7,
The gas sensor comprises:
A lower pad disposed below the sensor substrate,
Further comprising: a connection portion that penetrates the sensor substrate and electrically connects the upper pad and the lower pad
Sensor package. 11. The method of claim 10,
The sensed product,
A plurality of detection areas divided by a partitioning gap penetrating the detection object,
The heater electrode
A single heater electrode is commonly disposed on the plurality of sensing regions
Sensor package. 12. The method of claim 11,
The heater electrode
A first heating unit disposed on a first sensing area divided by the dividing air gap,
And a second heating portion disposed on a second sensing area separated by the dividing gap,
The resistance value of the first heating unit may be,
And a resistance value of the second heating portion
Sensor package. 13. The method of claim 12,
Wherein at least one of the length, the thickness, and the line width of the first heating unit
Wherein the second heating portion has a length, a thickness, and a line width different from at least one of the length,
Sensor package. 13. The method of claim 12,
The first heating unit may include:
A second heating unit disposed closer to the inlet than the second heating unit,
The temperature of the first heating unit may be,
The temperature of the second heating portion
Sensor package. Board;
A housing disposed on the substrate, the housing including an inlet, an outlet and an accommodation space; And
And a gas sensor and a dust sensor disposed together in the housing space of the housing,
The gas sensor comprises:
In the housing space of the housing, adjacent the inlet,
In the dust sensor,
Respectively, in the housing space of the housing,
The air introduced through the inlet of the housing,
And moves upward through an upward flow generated by the discharge heat of the gas sensor
Sensor package. 16. The method of claim 15,
In the dust sensor,
A light emitting portion for emitting light,
A light receiving unit for collecting light generated in the light emitting unit,
And a lens for integrating the light into the light receiving portion
Sensor package. 16. The method of claim 15,
The gas sensor comprises:
A plurality of gas sensing regions having different sensing temperatures,
Wherein the temperature of the sensing region disposed closest to the inlet among the plurality of gas sensing regions is the lowest
Sensor package.

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