KR20180060311A - Organic light emitting display device - Google Patents

Abstract

According to an embodiment of the present invention, an organic light emitting display device which can minimize a defect from occurring by out-gassing, and can improve reliability. The organic light emitting display device comprises: a display region; a non-display region outside the display region; a thin film transistor positioned in the display region; a protection layer positioned on the non-display region and the thin film transistor; a first electrode positioned on the protection layer, and connected to the thin film transistor; a bank layer arranged on one side of the first electrode, and exposing a part of the first electrode; a light emitting unit positioned on the first electrode; and a second electrode positioned on the light emitting unit, wherein the protection layer positioned on the non-display region includes a plurality of holes.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light-

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light emitting diode (OLED) display, and more particularly, to an organic light emitting diode (OLED) display capable of minimizing occurrence of defects caused by out-gassing and improving reliability.

The organic light emitting diode (OLED) is a self-luminous display device in which electrons and holes are injected into the light emitting layer from an anode for injecting electrons and an anode for injecting holes, And emits light when an exciton in which injected electrons and holes are coupled falls from an excited state to a ground state.

The organic light emitting display device is classified into a top emission type, a bottom emission type, and a dual emission type depending on a direction in which light is emitted, and a passive matrix type Matrix) and an active matrix (active matrix).

Unlike a liquid crystal display (LCD), an organic light emitting display does not require a separate light source and can be manufactured in a light and thin shape. In addition, the organic light emitting display device is not only advantageous from the viewpoint of power consumption by low voltage driving, but also has excellent color reproduction, response speed, viewing angle, and contrast ratio (CR) and is being studied as a next generation display device.

The organic light emitting display device is vulnerable to moisture or oxygen, and when moisture or oxygen penetrates into the organic light emitting display device, the metal electrode of the organic light emitting display device is oxidized, or the organic light emitting layer is deteriorated and pixel shrinkage or black spots dark spot) and various other defects such as poor image quality and reduced life.

The defective pixel shrinkage is a defect in which the interface between the metal electrode and the organic light emitting layer is oxidized or altered due to the infiltration of moisture, thereby changing to darkness from the edge of the pixel, and the defective black spot is deteriorated by the long- The defects can seriously affect the reliability of the OLED display.

Further, the performance of the organic light emitting diode display may be deteriorated due to out-gassing occurring in a plurality of organic layers disposed adjacent to the light emitting portion of the OLED display.

Particularly, when the organic light emitting display device is continuously exposed to UV (Ultra Violet) in a manufacturing process such as a curing process, out-gassing occurs in the organic light emitting display device, As the light emitting portion is damaged, defects such as image shrinkage or black spots may occur.

Accordingly, the inventor of the present invention invented an organic light emitting display device capable of minimizing occurrence of defects due to out-gassing and improving reliability.

A problem to be solved according to an embodiment of the present invention is that the protective layer on the planarization layer of the non-display area is configured to have a plurality of holes to minimize the occurrence of defects due to out-gassing, And an object thereof is to provide a light emitting display device.

The solutions according to the embodiments of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

In order to solve the above-described problems, it is an object of the present invention to provide an organic light emitting diode display having a plurality of holes on a planarization layer of a non-display area, thereby minimizing the occurrence of defects caused by out-gassing, Device is provided.

An OLED display according to an embodiment of the present invention includes a display region, a non-display region outside the display region, a thin film transistor in the display region, a protective layer on the thin film transistor and the non-display region, A bank layer disposed on one side of the first electrode and exposing a part of the first electrode; a bank layer formed on the light emitting section on the first electrode and a bank layer on the second electrode on the light emitting section; And the protective layer in the non-display area includes a plurality of holes.

In another aspect, there is provided an organic light emitting display comprising a substrate having a display region and a non-display region, a thin film transistor on the substrate, a first electrode, a second electrode on the thin film transistor, and a light emitting portion between the first electrode and the second electrode A device, comprising: a lower planarization layer on a thin film transistor in a non-display area; and a protection layer having a plurality of holes on the lower planarization layer, wherein outgassing of the lower planarization layer through a plurality of holes in the protection layer out-gassing may be evacuated.

The details of other embodiments are included in the detailed description and drawings.

The organic light emitting display according to an embodiment of the present invention is configured such that the protective layer on the lower planarization layer in the non-display area has a plurality of holes, and the outgassing of the lower planarization layer out-gassing can be easily discharged, thereby minimizing the out-gassing residue inside the OLED display.

In addition, since the out-gassing can be discharged through the plurality of holes provided in the protective layer, the organic light emitting display according to the embodiment of the present invention can prevent out- And the reliability of the organic light emitting display device can be improved.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

The scope of the claims is not limited by the matters described in the contents of the invention, as the contents of the invention described in the problems, the solutions to the problems and the effects to be solved do not specify essential features of the claims.

FIG. 1 is a diagram showing a schematic structure of an organic light emitting diode display according to an embodiment of the present invention. Referring to FIG.
2 is a schematic circuit diagram of an OLED display according to an embodiment of the present invention.
3 is a circuit diagram of a sub-pixel of an organic light emitting display according to an embodiment of the present invention.
4 is a plan view illustrating an organic light emitting display according to an exemplary embodiment of the present invention.
5 is a cross-sectional view taken along the line A-A 'in FIG. 4 of the OLED display according to the embodiment of the present invention.
6 is an enlarged view of a cross-sectional structure of FIG. 5B of an OLED display according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. Where the terms "comprises", "having", "done", and the like are used in this specification, other portions may be added unless "only" is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description. In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

Also, the first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, the present invention will be described in detail with reference to the drawings.

FIG. 1 is a diagram showing a schematic structure of an organic light emitting diode display according to an embodiment of the present invention. Referring to FIG.

1, an OLED display 100 according to an exemplary embodiment of the present invention includes an image processing unit 11, a timing controller 12, a data driver 13, a gate driver 14, 15).

The image processing unit 11 outputs a data enable signal DE together with a data signal DATA supplied from the outside. The image processing unit 11 can output at least one of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal in addition to the data enable signal DE. The image processing unit 11 is formed on the system circuit board in the form of an IC (Integrated Circuit).

The timing controller 12 receives a data signal DATA from a video processor 11 in addition to a data enable signal DE or a driving signal including a vertical synchronizing signal, a horizontal synchronizing signal and a clock signal.

The timing control unit 12 generates a gate timing control signal GDC for controlling the operation timing of the gate driving unit 14 and a data timing control signal DDC for controlling the operation timing of the data driving unit 13, . The timing control section 12 is formed on the control circuit board in the form of an IC.

The data driver 13 samples and latches the data signal DATA supplied from the timing controller 12 in response to the data timing control signal DDC supplied from the timing controller 12 and converts the sampled data signal into a gamma reference voltage . The data driver 13 outputs the data signal DATA through the plurality of data lines DL1 to DLn. The data driver 13 is formed on the data circuit board in the form of an IC.

The gate driver 14 outputs a gate signal in response to the gate timing control signal GDC supplied from the timing controller 12. [ The gate driver 14 outputs a gate signal through the plurality of gate lines GL1 to GLm. The gate driver 14 may be formed on the gate circuit board in the form of an IC or may be formed on the display panel 15 in a gate in panel (GIP) manner.

The display panel 15 displays an image corresponding to the data signal DATA and the gate signal supplied from the data driver 13 and the gate driver 14. The display panel 15 includes a plurality of sub-pixels SP for displaying an image.

According to the structure of the OLED display 100, the plurality of sub-pixels SP includes a red sub-pixel, a green sub-pixel and a blue sub-pixel, or a white sub-pixel, a red sub- Pixel. In addition, the sub-pixels SP may have one or more different emission areas depending on the emission characteristics.

The OLED display 100 according to the exemplary embodiment of the present invention may be applied to a display device such as a TV, a mobile device, a tablet PC, a monitor, a laptop computer, a vehicle display device, And the like. Or a wearable display device, a foldable display device, and a rollable display device.

2 is a schematic circuit diagram of an OLED display according to an embodiment of the present invention.

3 is a circuit diagram of a sub-pixel of an organic light emitting display according to an embodiment of the present invention.

2, a switching transistor SW, a driving transistor DR, a capacitor Cst, and a compensation circuit CC are connected to one sub-pixel of the OLED display 100 according to an exemplary embodiment of the present invention. And an organic light emitting diode (OLED). The organic light emitting diode OLED operates to emit light in accordance with the driving current generated by the driving transistor DR.

The switching transistor SW is operated so that the data signal supplied through the first data line DL1 is stored as a data voltage in the capacitor Cst in response to the gate signal supplied through the first gate line GL1a. The driving transistor DR operates so that a driving current flows between the high potential power supply wiring VDD and the low potential power supply wiring VGND in accordance with the data voltage stored in the capacitor Cst.

The compensation circuit CC is a circuit for compensating the threshold voltage and the like of the driving transistor DR. The compensation circuit CC consists of one or more thin film transistors and a capacitor. The reference line VREF may be a line for transmitting the initialization voltage of the compensation circuit CC to the data driver. The configuration of the compensation circuit CC may be variously configured according to the compensation method, and one compensation circuit will be exemplarily described with reference to FIG. 3 herein.

As shown in Fig. 3, the compensation circuit CC includes a sensing transistor ST and a reference line VREF. The sensing transistor ST is connected between a source line of the driving transistor DR and an anode electrode of the organic light emitting diode OLED (hereinafter referred to as a sensing node). The sensing transistor ST operates to supply the initialization voltage (or sensing voltage) transmitted through the reference line VREF to the sensing node or to sense the voltage or current of the sensing node.

The switching transistor SW has a gate electrode connected to the first gate line GL1a and a first electrode connected to the first data line DL1 and a second electrode connected to the gate electrode of the driving transistor DR .

The driving transistor DR has a gate electrode connected to the second electrode of the switching transistor SW and a first electrode connected to the first power supply line VDD and a second electrode connected to the anode electrode of the organic light emitting diode OLED. Lt; / RTI >

In the capacitor Cst, the first electrode is connected to the gate electrode of the driving transistor DR, and the second electrode is connected to the anode electrode of the organic light emitting diode OLED.

In the organic light emitting diode OLED, the anode electrode is connected to the second electrode of the driving transistor DR and the cathode electrode is connected to the second power supply line VGND.

The sensing transistor ST has a gate electrode connected to the first gate line GL1b, a first electrode connected to the reference line VREF, a second electrode of the driving transistor DR, which is a sensing node, The second electrode is connected to the anode electrode of the OLED.

For example, the operating time of the sensing transistor ST may be similar to, or the same as, or different from the switching transistor SW depending on the compensation algorithm (or the configuration of the compensation circuit). The reference line VREF may be connected to the data driver. In this case, the data driver can sense the sensing node of the sub-pixel during the non-display period of the real time image, or the N frame (N is an integer of 1 or more) and generate the sensing result.

In addition, the compensation target according to the sensing result may be a digital data signal, an analog data signal, gamma, or the like. The compensation circuit for generating the compensation signal (or the compensation voltage) based on the sensing result may be implemented in the interior of the data driver, in the timing controller, or in a separate circuit.

3, a sub-pixel of a 3T (Capacitor) structure including a switching transistor SW, a driving transistor DR, a capacitor Cst, an organic light emitting diode OLED, and a sensing transistor ST is referred to as a However, when the compensation circuit CC is added, it can be variously configured as 3T2C, 4T2C, 5T1C, 6T1C, 6T2C, 7T1C, and the like.

The thin film transistors (TFT) such as the switching transistor SW, the driving transistor DR and the sensing transistor ST may be formed of amorphous silicon (a-Si), polycrystalline silicon (poly-Si) And may be variously implemented based on a semiconductor layer made of an oxide semiconductor or an organic material.

4 is a plan view illustrating an organic light emitting display according to an exemplary embodiment of the present invention.

4, the display panel 15 of the OLED display 100 according to the embodiment of the present invention includes a display region 16 and a non-display region 17 located outside the display region 16, .

More specifically, the first substrate 110 of the display panel 15 includes a display region 16 in which a plurality of sub-pixels SP are formed, a first gate driver 14a, a second gate driver 14b, And a non-display area 17 in which the upper power supply wiring VDD, the lower potential power supply wiring VGND, the reference line VREF, and the pad unit 18 are formed.

The pad portion 18 is formed in the non-display region 17 on the upper outer side of the first substrate 110. [ The pad portion 18 is a pad region electrically connected to the external circuit board. The pad portion 18 is connected to, for example, a data circuit board on which the data driver is mounted or a control circuit board on which the timing controller is mounted.

The first gate driver 14a and the second gate driver 14b are gate drivers formed on the display panel 15 in a gate in panel (GIP) And outputs a gate signal to the control signal SP. The first gate driver 14a is formed in the non-display area 17 on the left side of the display area 16 and supplies a gate signal to the display area 16, And the gate signal is supplied to the display region 16 in the non-display region 17 on the right side.

The power supply wiring of the OLED display 100 according to the embodiment of the present invention includes a high potential power supply line VDD, a low potential power supply line VGND, and a reference line VREF, Display region 17 between the pad portion 18 and the display region 16 on the upper side of the display region 16. [

More specifically, the high-potential power supply line VDD is a line for transmitting a high-potential power supplied from the outside, such as a power supply unit, to the sub-pixels SP formed in the display region 16 through the pad unit 18.

The low potential power supply line VGND is connected to a line for transmitting a low potential power (or ground power) supplied from the outside such as a power supply unit to the sub pixels SP formed in the display region 16 through the pad portion 18 to be.

The reference line VREF transfers the initialization voltage (or sensing voltage) supplied from the outside such as a power supply unit to the sub pixels SP formed in the display region 16 through the pad unit 18, To the driving unit.

The power supply wiring, that is, the high-potential power supply line VDD, the low-potential power supply line VGND, and the reference line VREF according to the embodiment of the present invention is not necessarily limited to the arrangement structure shown in FIG. 4, And may be arranged in various numbers. That is, the power supply wiring may be configured to include at least one of the high potential power supply wiring VDD, the low potential power supply wiring VGND, and the reference line VREF.

5 is a cross-sectional view taken along the line A-A 'in FIG. 4 of the OLED display according to the embodiment of the present invention.

5, an OLED display 100 according to an exemplary embodiment of the present invention includes a substrate 110, a thin film transistor 120 disposed on the substrate 110, a first electrode 140, A second electrode 150 and an organic light emitting diode 145 disposed between the first electrode 140 and the second electrode 150 and having a plurality of organic layers and a light emitting portion 145 formed of an organic light emitting layer (EML) (OLED).

The OLED display 100 includes a plurality of sub pixels (SPs). The sub-pixel is a minimum unit area in which the actual light is emitted. In addition, a plurality of sub-pixels may be gathered to form a minimum group capable of expressing white light. For example, three sub-pixels may be a group, and red sub-pixels, green sub- Of the population. However, the present invention is not limited thereto, and various sub-pixel designs are possible. In FIG. 5, only one sub-pixel of the plurality of sub-pixels of the organic light emitting display 100 is illustrated for convenience of explanation.

The OLED display 100 according to the embodiment of the present invention includes a display area DA 16 including the plurality of sub pixels SP and a non-display area NDA , 17).

The display area DA 16 includes an organic light emitting diode OLED having a thin film transistor 120 and a light emitting part 145 on the thin film transistor 120. The non-display area NDA 17 is a gate- A second gate driver 14b of a gate in panel (GIP) scheme and a low potential power wiring contact VGND contact electrically connected to the first electrode 140 and the low potential power supply line VGND .

Referring to FIG. 5, the substrate 110 is formed of an insulating material for supporting various components of the OLED display 100. The substrate 110 may be formed of not only glass but also a flexible substrate having a flexible property. Examples of the substrate 110 include plastic such as PET (polyethylene terephthalate), PEN (polyethylene naphthalate), and polyimide A substrate or the like.

A buffer layer 115 may be formed on the substrate 110 to block penetration of impurities from the substrate 110 and from the outside and to protect various components of the organic light emitting display 100. The buffer layer 115 may be formed as a single layer or a multilayer structure of, for example, a silicon oxide film (SiOx) or a silicon nitride film (SiNx). The buffer layer 115 may be omitted depending on the structure and characteristics of the organic light emitting diode display 200.

A thin film transistor 120 including a semiconductor layer 121, a gate electrode 123, a first source and drain electrode 125, and a second source and drain electrode 129 is formed on the buffer layer 115.

Specifically, a semiconductor layer 121 is formed on the substrate 110, and a gate insulating layer 122 is formed on the semiconductor layer 121 to insulate the semiconductor layer 121 from the gate electrode 123.

An interlayer insulating layer 124 for insulating the gate electrode 123 and the first source and drain electrodes 125 is formed on the gate electrode 123.

On the interlayer insulating layer 124, first source and drain electrodes 125, which are in contact with the semiconductor layer 121, respectively, are formed. The first source and drain electrodes 125 are electrically connected to the semiconductor layer 121 through contact holes provided in the interlayer insulating layer 124.

The semiconductor layer 121 may be formed of an amorphous silicon (a-Si), a polycrystalline silicon (poly-Si), an oxide semiconductor, an organic semiconductor, or the like. When the semiconductor layer 121 is made of an oxide semiconductor, it may be made of any one of indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), indium zinc oxide (IZO), and indium tin zinc oxide But is not limited thereto.

The gate insulating layer 122 may be formed of a single layer or a multilayer structure made of an inorganic insulating material such as a silicon oxide film (SiOx), a silicon nitride film (SiNx), or the like.

The gate electrode 123 performs a function of transmitting a gate signal to the thin film transistor 120 and includes at least one of aluminum (Al), molybdenum (Mo), titanium (Ti), and copper (Cu) And may be formed of a single layer or a multilayer structure of the metal or an alloy thereof.

The first source and drain electrodes 125 serve to transmit an external electrical signal from the thin film transistor 120 to the light emitting unit 145. The first source and drain electrodes 125 may be formed of at least one of aluminum (Al), molybdenum (Mo), titanium (Ti), and copper (Cu), or an alloy thereof. Layer structure or a multi-layer structure.

A first planarization layer 126 is formed on the first source and drain electrodes 125. The first planarization layer 126 functions to flatten the upper surface of the thin film transistor 120. The first planarization layer 126 may be composed of a single layer or a plurality of layers, and may be formed of an organic material. For example, the first planarization layer 126 may be formed of any one of polyimide and photoacryl.

A second source and drain electrode 129 is formed on the first planarization layer 126. The second source and drain electrodes 129 are electrically connected to the first source and drain electrodes 125 through the contact holes formed in the first planarization layer 126 and electrically transmit external electrical signals to the light- 145).

The second source and drain electrodes 129 may be formed of at least one of aluminum (Al), molybdenum (Mo), titanium (Ti), and copper (Cu), or an alloy thereof. Layer structure or a multi-layer structure.

A protective layer 127 is formed on the second source and drain electrodes 129. The protective layer 127 is formed to cover the second source and drain electrodes 129 and protects the thin film transistor 120. The protective layer 127 may be formed of an inorganic insulating material and may be formed of a single layer or a multilayer structure of an inorganic insulating material such as a silicon oxide film (SiOx), a silicon nitride film (SiNx), or the like.

A second planarization layer 130 is formed on the protective layer 127. The second planarization layer 130 functions to planarize the second source and drain electrodes 129 and the protective layer 127. The second planarization layer 130 may be composed of a single layer or a plurality of layers, and may be formed of an organic material. In addition, the second planarization layer 130 may be formed of any one of polyimide and photo acryl.

The second planarization layer 130 includes an anode contact hole 135 for electrically connecting the thin film transistor 120 to the first electrode 140 in each sub-pixel.

The organic light emitting diode display 100 according to the embodiment of the present invention may be configured to include at least one planarization layer on the top or bottom of the passivation layer 127. [

5, an OLED display 100 according to an exemplary embodiment of the present invention includes a first planarization layer 126 and a second planarization layer 126, which are a lower planarization layer 126 and a second planarization layer 126, And a second planarization layer 130, which is an upper planarization layer, located on the second planarization layer 130.

When such a double-layered planarization layer is applied, second source and drain electrodes 129 are additionally disposed on top of the first source and drain electrodes 125, and first and second source and drain electrodes 125, And the drain electrode 129 are electrically connected to each other, the resistance of the source and drain electrodes and the wiring can be lowered. Further, since the interval between the electrodes and the wiring can be minimized, the arrangement and design of the electrodes and the wiring can be facilitated.

Only the driving transistor 120 electrically connected to the first electrode 140 among the various thin film transistors that may be included in the organic light emitting diode display 100 are illustrated for convenience of explanation. Each sub-pixel may further include a switching transistor, a capacitor, and the like.

The first electrode 140 is formed on the second planarization layer 130. The first electrode 140 may be an anode and is formed of a conductive material having a relatively high work function value to supply a hole to the organic light emitting layer EML of the light emitting portion 145. The first electrode 140 is electrically connected to the thin film transistor 120 through the anode contact hole 135 provided in the second planarization layer 130 and is electrically connected to the second source and the drain of the thin film transistor 120, Drain electrode 129, as shown in FIG. In addition, the first electrodes 140 are spaced apart from one another by the sub-pixels. The first electrode 140 is formed of a transparent conductive material and may be formed of a material such as indium tin oxide (ITO), indium zinc oxide (IZO), or the like.

When the OLED display 100 according to the exemplary embodiment of the present invention is the top emission type, the light emitted from the organic emission layer EML of the emission part 145 is reflected by the first electrode 140 A reflective layer made of a metal material such as aluminum (Al) or silver (Ag) having excellent reflection efficiency is formed on the upper or lower portion of the first electrode 140 so as to be more smoothly emitted upward. May be additionally formed.

For example, the first electrode 140 may have a two-layer structure in which a transparent conductive layer formed of a transparent conductive material and a reflective layer are sequentially stacked, or a three-layer structure in which a transparent conductive layer, a reflective layer, and a transparent conductive layer are sequentially stacked. The reflective layer may be silver (Ag) or an alloy containing silver, for example silver (Ag) or APC (Ag / Pd / Cu).

In describing an embodiment of the present invention, the top emission means a method in which light emitted from the organic light emitting layer (EML) of the light emitting portion 145 is emitted in the direction of the second electrode 150, Bottom emission refers to a method in which light is emitted in the direction of the first electrode 140, which is opposite to the top emission type.

In the OLED display 100 according to the present embodiment, the light emitted from the organic emission layer EML of the emission part 145 is emitted to the second electrode 150 in the direction of the top emission Organic light emitting display device.

A bank layer 155 is formed on the first electrode 140. The bank layer 155 separates adjacent sub-pixels and is disposed on one side of the first electrode 140 to expose a part of the first electrode 240.

The bank layer 155 may be made of an organic material. For example, the bank layer 155 may be made of polyimide, acryl, or benzocyclobutene (BCB) resin, but is not limited thereto.

In order to minimize the reflection by the external light of the OLED display 100, the bank layer 155 may be made of a material whose reflection of external light is minimized. For example, the bank layer 155 of the OLED display 100 according to the embodiment of the present invention may include a black pigment. That is, the photoresist for forming the bank layer 155 may be made of a material containing black pigment. Black pigments may be composed of organic or inorganic materials.

The black pigments may be composed of carbon-based or metal oxide. And, the photoresist may include photosensitive compounds comprising at least one of a polymer, a monomer, and a photoinitiator. And, the photoresist may include a solvent for dispersing the photosensitive compound.

Spacers 160 are formed on the bank layer 155. The spacers 160 may be formed by a process of depositing a plurality of organic layers or organic light emitting layers EML in the light emitting portion 145 constituting the organic light emitting diode OLED or a defect caused by a mask in the process of forming the second electrode 150 Can be prevented. The spacers 160 may be omitted according to the manufacturing method of the OLED display.

The second electrode 150 is formed on the light emitting portion 145 and the first electrode 140. The second electrode 150 may be a cathode and may be formed of a conductive material having a low work function since electrons must be supplied to the organic light emitting layer EML of the light emitting portion 145. More specifically, the second electrode 150 may be a metal material such as magnesium (Mg), silver-magnesium (Ag: Mg), or the like.

When the OLED display 100 according to the embodiment of the present invention is a top emission type, the second electrode 150 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO) ), Indium tin zinc oxide (ITZO), zinc oxide (ZnO), and tin oxide (TiO) based transparent conductive oxide.

A light emitting portion 145 is formed between the first electrode 140 and the second electrode 150. The light emitting portion 145 may include various organic layers as necessary, and may include an organic light emitting layer (EML). The organic material layer may include at least one hole transport layer (HTL) and an electron transport layer (ETL), and may include a hole injection layer (HIL), an electron injection layer (EIL), a hole blocking layer (HBL) ), And the like.

The organic light emitting layer EML included in the light emitting portion 145 may include a red light emitting layer configured to correspond to a red sub pixel, a green light emitting layer configured to correspond to a green sub pixel, and a blue light emitting layer configured to correspond to a blue sub pixel.

5, the non-display area NDA 17 of the OLED display 100 according to the exemplary embodiment of the present invention includes a gate-in- And a low potential power supply wiring contact VGND contact electrically connected to the first electrode 140 and the low potential power supply wiring VGND.

The second gate driver 14b, i.e., the gate-in-panel (GIP), may comprise various circuits for generating a gate voltage. For example, the gate-in-panel (GIP) may include a shift register, a level shifter, etc., and may include circuitry including a plurality of thin film transistors and circuitry interconnecting the circuits have.

5, an OLED display 100 according to an embodiment of the present invention includes a protective layer 127 having a plurality of holes 128 on a first planarization layer 126 in a non-display area NDA, ). ≪ / RTI > The plurality of holes 128 provided in the passivation layer 127 may be located on a GIP (Gate In Panel) of the non-display area NDA.

At least one hole 128 provided in the protective layer 127 of the non-display area NDA is formed by out-gassing generated in the first planarization layer 126 located under the protective layer 127 It can serve as a passage for facilitating the discharge.

5, an OLED display 100 according to an exemplary embodiment of the present invention includes a first electrode 140 having a plurality of holes 141 on a second planarization layer 130 in a non-display region NDA, (140). ≪ / RTI >

At least one hole 141 provided in the first electrode 140 of the non-display area NDA is formed in the first planarization layer 126 and the second planarization layer 126 located under the protection layer 127, Out-gassing occurring in the second planarization layer 130 positioned in the second planarization layer 130 can be easily discharged.

5, a plurality of holes 128 provided in the protection layer 127 in the non-display area NDA are overlapped with a plurality of holes 141 provided in the first electrode 140, . That is, at least one of the plurality of holes 141 provided in the first electrode 140 of the non-display area NDA is formed to be completely overlapped with the hole 128 provided in the protective layer 127, A straight path through the layer 126 and the second planarization layer 130 may be formed so that out-gassing discharge occurring in the OLED may occur more easily.

5, in the non-display area NDA, the bank layer 155 may be configured to include at least one hole 156 that exposes a plurality of holes 141 of the first electrode 140 have. That is, the bank layer 155 formed on the first electrode 140 in the non-display area NDA is formed to cover at least a part of the plurality of holes 141 provided in the first electrode 140, And at least one hole 156 for exposing a plurality of holes 141 of the one electrode 140. [

At least one hole 156 provided in the bank layer 155 in the non-display area NDA exposes the plurality of holes 141 of the first electrode 140 located under the bank layer 155, The outgassing generated from the first planarization layer 126 located under the protection layer 127 and the second planarization layer 130 located under the first electrode 140 can be easily discharged It can serve as a passageway.

A protective layer located between the lower planarization layer and the upper planarization layer in the non-display area is formed so as to cover the lower planarization layer, and the organic layer formed in the manufacturing process such as a planarization layer or a curing process after the formation of the bank layer Out-gassing in the light-emitting display device is blocked by the protective layer and is not smoothly discharged to the outside.

Accordingly, when out-gassing which is not discharged in the organic light emitting display device moves to the light emitting part 145 of the display area and penetrates, the light emitting part is damaged by out-gassing , Image quality defects such as pixel shrinkage or black spots, and life degradation may occur.

The organic light emitting diode display 100 according to the exemplary embodiment of the present invention may be configured such that the protective layer 127 formed on the first planarization layer 126 in the non-display area NDA includes a plurality of holes 128, The first electrode 140 formed on the second planarization layer 130 includes a plurality of holes 141 overlapping the plurality of holes 128 provided in the passivation layer 127 and the first electrode 140 The bank layer 155 formed on the organic light emitting display device includes at least one hole 156 exposing a plurality of holes 141 formed in the first electrode 140, Out-gassing can be easily discharged through the holes.

That is, in the organic light emitting display according to the embodiment of the present invention, the protective layer on the lower planarization layer in the non-display area is configured to have a plurality of holes, and the holes of the lower planarization layer Out-gassing can be easily discharged, so that the residual of out-gassing inside the organic light emitting display can be minimized.

In addition, since the out-gassing can be discharged through the plurality of holes provided in the protective layer, the organic light emitting display according to the embodiment of the present invention can prevent out- And the reliability of the organic light emitting display device can be improved.

6 is an enlarged view of a cross-sectional structure of FIG. 5B of an OLED display according to an embodiment of the present invention.

6, the width W1 of the hole 128 provided in the passivation layer 127 in the non-display area NDA of the organic light emitting diode display 100 according to the exemplary embodiment of the present invention is smaller than the width W1 of the first electrode 140 and the width W2 of the hole 141 provided in the first through fourth holes 140, 140, respectively. That is, a plurality of holes 128 formed in the passivation layer 127 formed on the first planarization layer 126 are formed on the first electrode 140 formed on the second planarization layer 130, Outgassing generated in the first planarization layer 126 as the lower planarization layer is formed by the hole 128 and the first electrode 140 provided in the protection layer 127, So that it can be discharged more easily.

Since the width W1 of the hole 128 provided in the protective layer 127 is larger than the width W2 of the hole 141 formed in the first electrode 140, The number of the holes 128 may be less than the number of the holes 141 provided in the first electrode 140.

6, the width W3 of the at least one hole 156 provided in the bank layer 155 is greater than the width W1 of the hole 128 of the protective layer 127 and the width W1 of the first electrode 140, The width W2 of the hole 141 of the light-emitting element. The hole 156 provided in the bank layer 155 is formed to be larger than the hole 128 of the protective layer 127 and the hole 141 of the first electrode 140 so that the out- Can be easily achieved.

That is, in the organic light emitting display according to the embodiment of the present invention, the protective layer on the lower planarization layer in the non-display area is configured to have a plurality of holes, and the holes of the lower planarization layer Out-gassing can be easily discharged, so that the residual of out-gassing inside the organic light emitting display can be minimized.

In addition, since the out-gassing can be discharged through the plurality of holes provided in the protective layer, the organic light emitting display according to the embodiment of the present invention can prevent out- And the reliability of the organic light emitting display device can be improved.

An organic light emitting display according to an embodiment of the present invention can be described as follows.

An OLED display according to an embodiment of the present invention includes a display region, a non-display region outside the display region, a thin film transistor in the display region, a protective layer on the thin film transistor and the non-display region, A bank layer disposed on one side of the first electrode and exposing a part of the first electrode; a bank layer formed on the light emitting section on the first electrode and a bank layer on the second electrode on the light emitting section; And the protective layer in the non-display area includes a plurality of holes. Therefore, since the out-gassing can be discharged through the plurality of holes provided in the protective layer, the organic light emitting display according to the embodiment of the present invention can cause out- And the reliability of the organic light emitting display device can be improved.

According to another aspect of the present invention, in the non-display region, the first electrode may include a plurality of holes.

According to still another aspect of the present invention, in the non-display area, the plurality of holes of the protective layer may overlap at least a part of the plurality of holes of the first electrode.

According to another aspect of the present invention, in the non-display region, the bank layer may include at least one hole exposing a plurality of holes of the first electrode.

According to another aspect of the present invention, the width of the hole of the protective layer may be larger than the width of the hole of the first electrode.

According to another aspect of the present invention, the number of holes in the protective layer may be smaller than the number of holes in the first electrode.

According to another aspect of the present invention, the protective layer may be formed of any one of a silicon oxide film (SiOx) and a silicon nitride film (SiNx).

According to another aspect of the present invention, the plurality of holes provided in the protective layer may be on a GIP (Gate In Panel) of the non-display area.

According to another aspect of the present invention, at least one planarization layer may be further provided on the top or bottom of the protective layer.

According to another aspect of the present invention, the light emitting portion may include an organic light emitting layer, at least one hole transporting layer, and an electron transporting layer.

According to another aspect of the present invention, the organic light emitting layer may include a red light emitting layer of a red sub-pixel, a green light emitting layer of a green sub-pixel, and a blue light emitting layer of a blue sub-pixel.

In another aspect, the organic light emitting display device includes a substrate having a display region and a non-display region, a thin film transistor on the substrate, a first electrode and a second electrode on the thin film transistor, and a light emitting portion between the first electrode and the second electrode A device, comprising: a lower planarization layer on a thin film transistor in a non-display area; and a protection layer having a plurality of holes on the lower planarization layer, wherein outgassing of the lower planarization layer through a plurality of holes in the protection layer out-gassing may be evacuated. Therefore, in the organic light emitting diode display according to the embodiment of the present invention, the protective layer on the lower planarization layer in the non-display area is configured to have a plurality of holes, and the holes of the lower planarization layer Out-gassing can be easily discharged, so that the residual of out-gassing inside the organic light emitting display can be minimized.

According to another aspect of the present invention, in the non-display area, the first electrode on the protective layer may include a plurality of holes.

According to another aspect of the present invention, the width of the hole provided in the protective layer may be larger than the width of the hole provided in the first electrode.

According to another aspect of the present invention, at least one of the holes provided in the first electrode may overlap the hole provided in the protective layer.

According to another aspect of the present invention, a bank layer covering at least a part of a plurality of holes provided in the first electrode may be included.

According to another aspect of the present invention, in the non-display area, the number of holes provided in the protective layer may be smaller than the number of holes provided in the first electrode.

According to another aspect of the present invention, an upper planarization layer may be further included on the protective layer.

According to another aspect of the present invention, the upper planarization layer and the lower planarization layer may be formed of any one of polyimide and photoacryl.

According to another aspect of the present invention, the protective layer may be formed of an inorganic insulating material.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, have. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

11:
12:
13:
14: Gate driver
14a and 14b: GIP (Gate In Panel)
15: Display panel
16: Display area
17: Non-display area
18: Pad portion
100: organic light emitting display
110: substrate
115: buffer layer
120: thin film transistor
121: semiconductor layer
122: gate insulating layer
123: gate electrode
124: interlayer insulating layer
125: first source and drain electrodes
126: first planarization layer
127: protective layer
128: Protective layer hole
129: second source and drain electrodes
130: second planarization layer
135: Anode contact hole
140: first electrode
141: first electrode hole
145:
150: second electrode
155: bank layer
156: bank layer hole
160: Spacer
VGND: Low-potential power wiring
VREF: Reference line
VDD: high-potential power wiring
SP: display pixel

Claims (20)

Display area;
A non-display area outside the display area;
A thin film transistor in the display region;
A protective layer on the thin film transistor and the non-display region,
A first electrode on the protective layer and connected to the thin film transistor;
A bank layer disposed on one side of the first electrode and exposing a part of the first electrode;
A light emitting portion on the first electrode; And
And a second electrode on the light emitting portion,
And the protective layer of the non-display area includes a plurality of holes. The method according to claim 1,
In the non-display region, the first electrode includes a plurality of holes. 3. The method of claim 2,
In the non-display area, a plurality of holes of the protective layer are overlapped with at least a part of the plurality of holes of the first electrode. 3. The method of claim 2,
In the non-display region, the bank layer includes at least one hole exposing a plurality of holes of the first electrode. 3. The method of claim 2,
Wherein a width of the hole of the protective layer is larger than a width of the hole of the first electrode. 3. The method of claim 2,
Wherein the number of holes in the protective layer is smaller than the number of holes in the first electrode. The method according to claim 1,
Wherein the protective layer is made of one of a silicon oxide film (SiOx) and a silicon nitride film (SiNx). The method according to claim 1,
And the plurality of holes provided in the protective layer are on a GIP (Gate In Panel) of the non-display area. The method according to claim 1,
Further comprising at least one planarization layer on or under the protective layer. The method according to claim 1,
Wherein the light emitting portion includes an organic light emitting layer, at least one hole transporting layer, and an electron transporting layer. 11. The method of claim 10,
Wherein the organic light emitting layer includes a red light emitting layer of a red sub-pixel, a green light emitting layer of a green sub-pixel, and a blue light emitting layer of a blue sub-pixel. An organic light emitting display device comprising a substrate having a display region and a non-display region, a thin film transistor on the substrate, a first electrode and a second electrode on the thin film transistor, and a light emitting portion between the first electrode and the second electrode A lower planarization layer on the thin film transistor in the non-display area, and a protection layer having a plurality of holes on the lower planarization layer, wherein the lower planarization layer includes a plurality of holes, The out-gassing of the organic light-emitting device can be discharged. 13. The method of claim 12,
In the non-display region, the first electrode on the protective layer includes a plurality of holes. 14. The method of claim 13,
Wherein a width of a hole provided in the passivation layer is larger than a width of a hole provided in the first electrode. 14. The method of claim 13,
Wherein at least one of holes provided in the first electrode overlaps a hole provided in the passivation layer. 14. The method of claim 13,
And a bank layer covering at least a part of the plurality of holes provided in the first electrode. 14. The method of claim 13,
In the non-display area, the number of holes provided in the passivation layer is smaller than the number of holes provided in the first electrode. 13. The method of claim 12,
And an upper planarization layer on the passivation layer. 19. The method of claim 18,
Wherein the upper planarization layer and the lower planarization layer are formed of one of polyimide and photoacid. 13. The method of claim 12,
Wherein the protective layer is made of an inorganic insulating material.

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