KR20180058529A - Dielectric wave guide device and method for fabricating the same - Google Patents

Abstract

Disclosed are a dielectric waveguide device and a manufacturing method thereof. The dielectric waveguide device includes a device characteristic control unit formed in a preset region of the outer side of a dielectric waveguide. The device characteristic control unit includes a dielectric exposure part to expose a dielectric of the dielectric waveguide, an inner conductive part and an outer conductive part electrically isolated from each other by the dielectric exposure part, and a conductive connection part for connecting the inner and outer conductive parts. According to the configuration, since a filter characteristic can be controlled afterwards in the dielectric waveguide device which is already manufactured, various types of dielectric waveguides, which cannot be manufactured by a semiconductor process, can be manufactured to have a high quality factor and uniform characteristics.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a dielectric waveguide device,

The present invention relates to a waveguide, and more particularly, to a dielectric waveguide element in which a waveguide is filled with a dielectric and a method of manufacturing the same.

With the spread of mobile communication devices, it has become necessary to use a millimeter band frequency higher than the currently used frequency band. As a result, a new type of transmission line is required to transmit electric energy or signals of a high millimeter band frequency, and a wave guide provides such a function.

The waveguide can be implemented with various types of filters by coupling the resonators to each other. The dielectric waveguide filter means a filter which functions to extract and filter only a desired frequency while the waveguide is filled with a dielectric.

1 is a perspective view of an example of a dielectric waveguide filter according to the prior art. In the dielectric waveguide filter as shown in FIG. 1, the dielectric waveguide resonator is electromagnetically coupled to each other through a coupling portion, which is a structure that controls the coupling amount between the resonators.

On the other hand, since the millimeter band waveguide filter conventionally requires a precise process, it is mainly manufactured using a semiconductor process. However, in the case of a waveguide filter fabricated by a semiconductor process, it is difficult to realize a filter with a thickness of 0.8 mm or more due to a process limitation.

On the other hand, when the waveguide filter is fabricated using a mold or an instrument, rather than a semiconductor process, it is possible to design a waveguide filter having a height higher than 0.8 mm, thereby improving the filter loss.

Table 1 shows the change in characteristics of the dielectric waveguide single resonator with respect to the height of the resonator. In Table 1, the Q value increases from 1013 to 1282 when the height of the resonator increases from 0.8 mm to 1.4 mm.

fair Semiconductor process Manufacturing process Height [mm] 0.8 1.4 Q 1013 1282

However, when a dielectric waveguide is fabricated by a fabrication process, the dimensional tolerance is large, so that it is difficult to obtain uniform characteristics when applied to the millimeter band. 2 is a view schematically showing a planar shape of a dielectric waveguide filter fabricated by a fabrication process.

Table 2 is a table showing the frequency variation according to the dimension, and Table 3 is a table showing the frequency variation according to the dielectric constant. In Table 2, it can be seen that a frequency variation of about 300 MHz occurs according to a dimensional tolerance of 0.1 mm, and a frequency change of about 100 MHz occurs due to a minute change in the dielectric permittivity caused by the manufacturing method or manufacturing environment in Table 3 .

Dimensions [mm] Frequency [GHz] 2.4 27.2838 2.5 27.5744 2.6 27.9344

The permittivity [e _r ] Frequency [GHz] 11.6 27.4950 11.7 27.6175 11.8 27.7375

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems of the prior art, and it is an object of the present invention to provide a dielectric waveguide device formed at a height that can not be manufactured by a semiconductor process, The purpose.

In order to achieve the above object, a dielectric waveguide device according to the present invention includes a device characteristic adjusting unit formed on a predetermined area of an outer surface of a dielectric waveguide device, wherein the device characteristic adjusting unit includes a dielectric exposed unit, And an electrically conductive connection portion that selectively connects the inner conductive portion and the outer conductive portion.

According to such a configuration, it is possible to posteriorly adjust the device characteristics in the already manufactured dielectric waveguide device, and thus various types of dielectric waveguides which can not be manufactured by the semiconductor process are manufactured with excellent quality factor and uniform characteristics .

In this case, the dielectric waveguide element may be a dielectric waveguide filter including a plurality of dielectric waveguide resonators, and a dielectric waveguide coupling portion coupling the dielectric waveguide resonators to each other.

Further, the element characteristic adjusting section may be formed on a plane perpendicular to the electric field direction in the waveguide. According to this configuration, the characteristics of the dielectric waveguide element can be controlled by adjusting the capacitor component in the waveguide.

Further, the inner conductive portion may be formed in a plurality of predetermined portions. With this configuration, it becomes possible to perform device characteristic adjustment in a wider range.

Further, the element characteristic adjusting section may be formed in the dielectric waveguide resonator section. According to such a configuration, the element characteristic adjuster can adjust the resonant frequency of the dielectric waveguide resonator.

Further, the device characteristic adjusting section may be formed in the dielectric waveguide coupling section. According to such a configuration, the element characteristic adjusting section can adjust the coupling degree (coupling) of the dielectric waveguide coupling section.

The conductive connection portion may selectively connect the inner conductive portion and the outer conductive portion by a wire and may selectively connect the inner conductive portion and the outer conductive portion by removing a conductive region connected between the inner conductive portion and the outer conductive portion. According to such a configuration, the selective connection method of the inner conductive portion and the outer conductive portion can be variously selected according to the use environment or the manufacturing environment.

According to another aspect of the present invention, there is provided a method of manufacturing a dielectric waveguide device, comprising: forming a dielectric exposed region in which a dielectric of a dielectric waveguide is exposed in a predetermined region of a conductive film formed on an outer surface of a dielectric waveguide; And a conductive connection step for selectively connecting an outer conductive region electrically isolated by the region.

At this time, the conductive connection step includes measuring a characteristic of the waveguide element in which the dielectric exposed region is formed, and selectively connecting the inner conductive region and the outer conductive region according to the characteristics of the measured dielectric waveguide element.

According to the present invention, filter characteristics can be adjusted afterwards in a dielectric waveguide filter that has already been manufactured, so that the filter can be manufactured to have a height that can not be manufactured by a semiconductor process, do.

In addition, the characteristics of the dielectric waveguide filter can be controlled by adjusting the capacitor component in the waveguide.

Further, it becomes possible to perform device characteristic adjustment in a wider range.

In addition, the device characteristic adjuster can adjust the resonance frequency of the dielectric waveguide resonator.

In addition, the device characteristic control unit can control the coupling degree of the dielectric waveguide coupling unit.

In addition, the method of selectively connecting the inner conductive portion and the outer conductive portion can be variously selected depending on the use environment and the manufacturing environment.

1 is a perspective view of an example of a dielectric waveguide filter according to the prior art;
2 is a schematic view showing a planar shape of a dielectric waveguide filter fabricated by a mold method;
3 is a perspective view of a dielectric waveguide filter according to an embodiment of the present invention.
Figs. 4 to 6 are a front view, a side view, and a rear view, respectively, of the dielectric waveguide filter of Fig. 3; Fig.
Figure 7 illustrates examples of structures for adjusting the amount of coupling between dielectric waveguides.
8 is a more detailed plan view of the element characteristic adjusting section of FIG. 3; FIG.
Figs. 9-12 illustrate various embodiments of the inner conductive portion, respectively; Figs.
13 shows an example in which a conductive connection portion selectively connects an internal conductive portion and an external conductive portion by disconnection of a conductive connection portion implemented with a conductive film;
FIG. 14 is a schematic flow chart for performing a method of manufacturing a dielectric waveguide filter according to an embodiment of the present invention. FIG.
15 is a graph showing the frequency characteristics in the case where all of the conductive connection portions are connected in Table 4;
FIG. 16 is a graph showing frequency characteristics when all three conductive connections are connected in a device characteristic adjusting unit formed in the dielectric waveguide coupling unit of FIG. 3;

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

FIG. 3 is a perspective view of a dielectric waveguide filter according to an embodiment of the present invention, and FIGS. 4 to 6 are a front view, a side view, and a rear view, respectively, of the dielectric waveguide filter of FIG. 3, the dielectric waveguide filter 100 includes a plurality of dielectric waveguide resonators 110, a dielectric waveguide coupling unit 120 coupling the dielectric waveguide resonator units 110 to each other, and a dielectric waveguide filter unit 120 formed on a predetermined area of the outer surface of the dielectric waveguide filter. And a device characteristic adjusting unit 130.

3, the dielectric waveguide coupling unit 120 is a structure capable of controlling the coupling between the dielectric waveguide resonator units 110. The dielectric waveguide coupling unit 120 controls the area of the dielectric material as shown in FIG. 3, The dielectric waveguide resonator 110 can be formed in any other form capable of adjusting the amount of coupling between the dielectric waveguide resonator units 110 by forming a metallic body in the form of a plate or a via in the dielectric body. 7 is a diagram showing examples of structures for adjusting the coupling amount between dielectric waveguides.

According to this configuration, since the tuning structure is implemented in the dielectric waveguide filter, the filter characteristics can be adjusted afterwards in the dielectric waveguide filter manufactured in advance, so that various types of dielectric waveguides, which can not be manufactured by the semiconductor process, So that it can be manufactured with excellent and uniform characteristics.

The device characteristic adjusting unit 130 is formed on a plane perpendicular to the electric field direction in the waveguide, and controls the characteristics of the dielectric waveguide filter by controlling the capacitor component in the waveguide. In the dielectric waveguide structure as shown in FIG. 3, the electric field in the waveguide is applied from the lower side to the upper side, and accordingly, it can be seen that the device characteristic control unit 130 is formed on the waveguide in FIG.

The element characteristic adjusting unit 130 may be formed in the dielectric waveguide resonator 110 to adjust the resonance frequency of the dielectric waveguide resonator 110 or may be formed in the dielectric waveguide coupling unit 120 and may be formed in the dielectric waveguide coupling unit 120 (Coupling). In FIG. 4, it can be seen that the element characteristic adjusting unit 130 is formed on the upper side of the dielectric waveguide resonator 110 and the dielectric waveguide coupling unit 120, respectively.

FIG. 8 is a diagram showing a more detailed plan view of the element characteristic adjusting unit 130 of FIG. 8, the element characteristic adjusting unit 130 further includes a dielectric exposed portion 132 in which a dielectric of the dielectric waveguide is exposed, an internal conductive portion 134 electrically isolated from each other by the dielectric exposed portion 132, And a conductive connection portion 138 for selectively connecting the inner conductive portion 134 and the outer conductive portion 136. [

The inner conductive portion 134 and the outer conductive portion 136 may be provided in the dielectric waveguide filter 100 in a separate structure. However, in the process of forming the dielectric exposed portion 132, the conductive film formed on the outer surface of the waveguide is removed in a predetermined form The dielectric waveguide conductive film formed according to the present invention.

At this time, although the inner conductive part 134 may be formed in one shape, it is common that a plurality of the inner conductive parts 134 are formed, and the number of the inner conductive parts 134 may be variously selected as needed.

As the number of the internal conductive parts 134 increases, the tuning range is widened. However, as the number of the internal conductive parts 134 increases, a fine process is required as the number of the internal conductive parts 134 increases, and the width of the exposed dielectric area is widened.

In FIG. 8, the shape of the inner conductive part 134 is implemented in a rectangular shape, but the shape and size of the inner conductive part 134 may be variously implemented. 9 to 12 are views showing various embodiments of the inner conductive portion 134, respectively.

FIGS. 9 and 10 show an example in which a rectangular internal conductive portion is continuously formed in the transverse direction, and FIGS. 9 and 10 show examples in which six and three internal conductive portions are formed, respectively.

Figs. 11 and 12 show an example in which small-size figures are continuously formed inside a large-size graphic object, and Figs. 11 and 12 show examples in which the inner conductive parts are formed in a square and a circle, respectively.

8, the conductive connection portion 138 can selectively connect the inner conductive portion 134 and the outer conductive portion 136 through the wire material. However, the inner conductive portion 134 and the outer conductive portion 136 may be connected to each other, The inner conductive portion 134 and the outer conductive portion 136 may be selectively connected to each other by removing the conductive region already connected between the inner conductive portion 134 and the outer conductive portion 136. [

13 is a view showing an example in which the conductive connection portion 138 selectively connects the internal conductive portion 134 and the external conductive portion 136 by disconnecting the conductive connection portion 138 embodied by the conductive film.

13 shows that the conductive connection portion 138 is narrower than the internal conductive portion 134. In this case, for the selective connection of the internal conductive portion 134 and the external conductive portion 136, the conductive connection portion 138 Can be more easily removed.

In addition, the conductive connection portion 138 may be implemented in various other ways in which the external conductive portion 136 of the internal conductive portion 134 can be selectively connected. The conductive connection portion 138 may have various configurations .

14 is a schematic flow chart for performing a method of manufacturing a dielectric waveguide filter according to an embodiment of the present invention. The dielectric waveguide filter manufacturing method shown in FIG. 14 includes a plurality of dielectric waveguide resonators, a dielectric waveguide coupling unit coupling the dielectric waveguide resonators to each other, and a dielectric region surrounding the inner conductive region in a predetermined area of the outer surface of the dielectric waveguide And a device characteristic adjusting section.

14, a dielectric exposed region in which a dielectric of a dielectric waveguide is exposed is formed in a predetermined region of a conductive film formed on an outer surface of the dielectric waveguide filter (S110). Next, the dielectric waveguide filter having the dielectric exposed region is bonded to the product (PCB) (S120), and the characteristics of the dielectric waveguide filter are measured (S130).

Finally, an external conductive region electrically isolated by the internal conductive region and the dielectric region is selectively connected (S140). At this time, the connection between the inner conductive region and the outer conductive region may be definitively performed by a preset tuning range, or may be performed gradually with repeated measurement of the device characteristics.

Table 4 is a table in which a frequency control range according to five selective connection of the conductive connection part 138 in the element characteristic adjusting part 130 formed in the dielectric waveguide resonator part 110 of FIG. 3 is recorded. Table 4 shows that the frequency control range increases by 0.2 GHz every time the number of connections of the conductive connection increases by one.

Number of conductive connections Frequency adjustment range [GHz] One 0.6 2 0.8 3 One 4 1.2 5 1.4

15 is a graph showing the frequency characteristics when all five conductive connection portions 138 are connected in Table 4. [ It can be seen that the blue line on the left side is formed below 1.4 GHz as compared with the red line on the right side in FIG. 15, which indicates that the resonance frequency is 1.4 Hz As shown in FIG.

FIG. 16 is a diagram showing frequency characteristics when all three conductive connection parts 138 are connected in the element characteristic adjusting part 130 formed in the dielectric waveguide coupling part 120 of FIG. In FIG. 16, it can be seen that the right lower part of the center line has almost no change, but the left lower part is formed below 120 MHz, which is lower than the case of not connected (right side) It means expanding.

Although the present invention has been described in terms of some preferred embodiments, the scope of the present invention should not be limited thereby but should be modified and improved in accordance with the above-described embodiments.

100: dielectric waveguide filter
110: dielectric waveguide resonance part
120: dielectric waveguide coupling portion
130:
132: dielectric exposed portion
134: internal conductive part
136: outer conductive part
138:

Claims (17)

And a device characteristic adjusting section formed in a predetermined area on the outer surface of the dielectric waveguide, wherein the device characteristic adjusting section
A dielectric exposed portion in which a dielectric of the dielectric waveguide is exposed;
An inner conductive portion and an outer conductive portion electrically isolated by the dielectric exposed portion; And
And a conductive connection portion for selectively connecting the inner conductive portion and the outer conductive portion.
The dielectric waveguide device according to claim 1,
A plurality of dielectric waveguide resonators; And
And a dielectric waveguide coupling unit coupling the dielectric waveguide resonators to each other.
The method according to claim 1,
And the device characteristic adjusting unit is formed on a plane perpendicular to an electric field direction in the waveguide.
The method of claim 3,
Wherein the inner conductive parts are formed in a plurality of predetermined configurations.
The method of claim 4,
Wherein the device characteristic adjusting unit is formed in the dielectric waveguide resonator.
The method of claim 4,
And the device characteristic adjusting unit is formed in the dielectric waveguide coupling unit.
The method of claim 4,
Wherein the conductive connection portion selectively connects the inner conductive portion and the outer conductive portion by a wire.
The method of claim 4,
Wherein the conductive connection portion selectively connects the inner conductive portion and the outer conductive portion by removing a conductive region connected between the inner conductive portion and the outer conductive portion.
A method of manufacturing a dielectric waveguide device including a device characteristic adjusting section in which a dielectric region surrounding an inner conductive region is formed in a predetermined region on an outer surface of a dielectric waveguide,
Preparing a dielectric waveguide element in a state where a dielectric exposed region in which a dielectric of the dielectric waveguide is exposed is formed in a predetermined area of a conductive film formed on an outer surface of the dielectric waveguide element; And
And a conductive connection step for selectively connecting the inner conductive region and the outer conductive region electrically isolated by the dielectric region.
[Claim 11] The dielectric waveguide device according to claim 9,
A plurality of dielectric waveguide resonators; And
And a dielectric waveguide coupling unit coupling the dielectric waveguide resonators to each other.
The method of claim 9,
Wherein the dielectric exposed region forming step forms the dielectric exposed region on a plane perpendicular to an electric field direction in the waveguide.
The method of claim 11,
Wherein the dielectric exposed region forming step forms a plurality of internal conductive regions in advance.
The method of claim 12,
Wherein the dielectric exposed region is formed in the dielectric waveguide resonator.
The method of claim 12,
Wherein the dielectric exposed region is formed in the dielectric waveguide coupling portion.
The method of claim 12,
Wherein the conductive connection step selectively connects the inner conductive region and the outer conductive region with a wire.
The method of claim 12,
Wherein the conductive connection step selectively connects the inner conductive region and the outer conductive region by removing a conductive region connected between the inner conductive region and the outer conductive region.
10. The method of claim 9,
Measuring a characteristic of the waveguide element in which the dielectric exposed region is formed,
And selectively connecting the inner conductive region and the outer conductive region according to the measured characteristics of the dielectric waveguide device.

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