KR20190065766A - Dielectric wave guide device and method for fabricating the same - Google Patents

Abstract

Disclosed are a dielectric waveguide device and a manufacturing method thereof. The dielectric waveguide device includes a plurality of device characteristic adjusting portions formed in a predetermined area of an outer surface of the dielectric waveguide device. The device characteristic adjusting portion includes a dielectric exposed portion, in which the dielectric of the dielectric waveguide is exposed, an inner conductive portion and an outer conductive portion electrically isolated by the dielectric exposed portion, and a conductive connection portion for selectively connecting the inner conductive portions which are different and respectively formed in the plurality of device characteristic adjusting portions. According to the configuration, the device characteristics in an already-manufactured dielectric waveguide device can be adjusted posteriorly such that various types of dielectric waveguides which cannot be manufactured by a semiconductor process are manufactured to have an excellent quality factor and uniform characteristics.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a dielectric waveguide device,

The present invention relates to a waveguide, and more particularly, to a dielectric waveguide element in which a waveguide is filled with a dielectric and a method of manufacturing the same.

With the spread of mobile communication devices, it has become necessary to use a millimeter band frequency higher than the currently used frequency band. As a result, a new type of transmission line is required to transmit electric energy or signals of a high millimeter band frequency, and a wave guide provides such a function.

The waveguide can be implemented with various types of filters by coupling the resonators to each other. The dielectric waveguide filter means a filter which functions to extract and filter only a desired frequency while the waveguide is filled with a dielectric.

1 is a perspective view of an example of a dielectric waveguide filter according to the prior art. In the dielectric waveguide filter as shown in FIG. 1, the dielectric waveguide resonator is electromagnetically coupled to each other through a coupling portion, which is a structure that controls the coupling amount between the resonators.

On the other hand, since the millimeter band waveguide filter conventionally requires a precise process, it is mainly manufactured using a semiconductor process. However, in the case of a waveguide filter fabricated by a semiconductor process, it is difficult to implement a filter with a thickness of 0.8 mm or more due to a process limitation.

On the other hand, when the waveguide filter is fabricated using a mold or an instrument, rather than a semiconductor process, it is possible to design a waveguide filter having a height higher than 0.8 mm, thereby improving the filter loss.

Table 1 shows the change in characteristics of the dielectric waveguide single resonator with respect to the height of the resonator. In Table 1, the Q value increases from 1013 to 1282 when the height of the resonator increases from 0.8 mm to 1.4 mm.

fair Semiconductor process Manufacturing process Height [mm] 0.8 1.4 Q 1013 1282

However, when a dielectric waveguide is fabricated by a fabrication process, the dimensional tolerance is large, so that it is difficult to obtain uniform characteristics when applied to the millimeter band. Table 2 is a table showing the frequency variation according to the dimension, and Table 3 is a table showing the frequency variation according to the dielectric constant.

In Table 2, it can be seen that a frequency variation of about 300 MHz occurs according to a dimensional tolerance of 0.1 mm, and a frequency change of about 100 MHz occurs due to a minute change in the dielectric permittivity caused by the manufacturing method or manufacturing environment in Table 3 .

Dimensions [mm] Frequency [GHz] 2.4 27.2838 2.5 27.5744 2.6 27.9344

The permittivity [e _r ] Frequency [GHz] 11.6 27.4950 11.7 27.6175 11.8 27.7375

Further, in the conventional dielectric waveguide filter, the transmission line zero is formed using a metal line formed by silver plating or the like. Since the transmission line zero point has a fixed attenuation characteristic, There is a difficulty in tuning.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a dielectric waveguide device which is formed at a height that can not be manufactured by a semiconductor process and which has a high quality factor and can be tuned even when a tolerance is generated, And a method for producing the same.

In order to achieve the above object, a dielectric waveguide device according to the present invention includes a plurality of device characteristic adjusting portions formed in a predetermined area on an outer surface of a dielectric waveguide device, wherein the device characteristic adjusting portion includes: a dielectric exposed portion in which a dielectric of the dielectric waveguide is exposed; An internal conductive portion electrically isolated by the dielectric exposed portion and an external conductive portion, and the conductive connection portion selectively connects the different internal conductive portions formed in the plurality of element characteristic adjusting portions, respectively.

According to such a configuration, it is possible to posteriorly adjust the device characteristics in the already manufactured dielectric waveguide device, and thus various types of dielectric waveguides which can not be manufactured by the semiconductor process are manufactured with excellent quality factor and uniform characteristics .

In this case, the dielectric waveguide element may be a dielectric waveguide filter including a plurality of dielectric waveguide resonators, and a dielectric waveguide coupling portion coupling the dielectric waveguide resonators to each other. According to this configuration, the transmission zero characteristic of the dielectric waveguide can be changed to control the attenuation characteristics of the filter.

In addition, the element characteristic adjusting section may be formed on a plane perpendicular to the electric field direction in the waveguide, and in particular, the element characteristic adjusting section may be formed in the dielectric waveguide resonator section. According to this structure, the phase difference is generated in the resonance portion of the dielectric waveguide filter, and the attenuation characteristic can be adjusted.

At this time, the conductive connection portion may connect the element characteristic adjusting portions formed in the outer dielectric waveguide resonators, which are located on the outermost side of the plurality of dielectric waveguide resonators, to each other.

The conductive connection portion may include an element characteristic adjusting portion formed in one of the plurality of outer dielectric waveguide resonators located at the outermost one of the plurality of dielectric waveguide resonators and an element characteristic adjusting portion formed in one of the inner dielectric waveguide resonators, The adjustment parts can be connected to each other.

Further, the element characteristic adjusting section may be formed in the dielectric waveguide coupling section.

Further, the conductive connection portion can selectively connect between different internal conductive portions by means of wires.

At this time, the conductive connection portion may be formed in a plurality of predetermined connections, and the distance between the conductive connection portion and the waveguide may be set according to the characteristics of the dielectric waveguide device set in advance.

According to another aspect of the present invention, there is provided a method of fabricating a dielectric waveguide device including a plurality of device characteristics adjusting portions in which a dielectric region surrounding an inner conductive region is formed in a predetermined region of an outer surface of a dielectric waveguide, Forming a dielectric exposed region in which a dielectric of a dielectric waveguide is exposed in a predetermined region of a conductive film formed on an outer surface of the element; And a conductive connection step.

According to the present invention, it is possible to postpone the device characteristics in the already manufactured dielectric waveguide device, so that various types of dielectric waveguides which can not be manufactured by the semiconductor process are manufactured with excellent quality factor and uniform characteristics .

In addition, the transmission zero characteristic of the dielectric waveguide filter can be changed to control the attenuation characteristics of the filter.

In addition, it is possible to adjust the attenuation characteristic by generating a phase difference in the resonance portion of the dielectric waveguide filter.

1 is a perspective view of an example of a dielectric waveguide filter according to the prior art;
2 is a perspective view of a dielectric waveguide filter according to an embodiment of the present invention;
3 is a plan view of the dielectric waveguide filter of Fig.
Figure 4 illustrates examples of structures for adjusting the amount of coupling between dielectric waveguides.
5 and 6 are a perspective view and a plan view, respectively, of the dielectric waveguide device of FIG. 2 prior to connection of the conductive connection.
Figs. 7 and 8 are graphs showing the frequency characteristics of the dielectric waveguide filter of Figs. 5 and 2, respectively. Fig.
Figs. 9 and 10 are a dielectric waveguide filter perspective view and a plan view, respectively, in the case where the conductive connection portion performs selective connection different from Fig. 2; Fig.
11 is a graph showing the frequency characteristics of the dielectric waveguide filter of Fig.
FIGS. 12 to 14 and FIGS. 15 to 17 are a perspective view, a plan view, and a frequency characteristic graph of two dielectric waveguide filters each having a plurality of connections between different element characteristic adjusting portions. FIG.
Figs. 18 and 19 are schematic views showing examples in which the height of the bonding wire from the dielectric waveguide is 0.1 mm and 0.7 mm, respectively. Fig.
20 is a graph showing frequency characteristics of dielectric waveguides varying with different heights;

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

FIG. 2 is a perspective view of a dielectric waveguide filter according to an embodiment of the present invention, and FIG. 3 is a plan view of the dielectric waveguide filter of FIG. 2. Referring to FIG. 2, the dielectric waveguide filter 100 includes a plurality of dielectric waveguide resonators 110, a dielectric waveguide coupling unit 120 coupling the dielectric waveguide resonator units 110 to each other, And a conductive connection part 140 connecting between the device characteristic adjusting part 130 and the different device characteristic adjusting part 130.

2, the dielectric waveguide coupling unit 120 refers to a structure that can control the coupling between the dielectric waveguide resonator units 110. The dielectric waveguide coupling unit 120 controls the area of the dielectric material as shown in FIG. 2, A metal body in the form of a plate or a via may be formed in the dielectric body as in the cross-sectional view and may be realized in any other form capable of adjusting the coupling amount between the dielectric waveguide resonance units 110. 4 is a diagram showing examples of structures for adjusting the coupling amount between dielectric waveguides.

According to this structure, since the tuning structure is implemented in the dielectric waveguide filter, the device characteristics can be adjusted afterwards in the dielectric waveguide device that has already been manufactured, so that various types of dielectric waveguides, which can not be manufactured by the semiconductor process, So that it can be manufactured with excellent and uniform characteristics.

The device characteristic adjusting unit 130 may be formed on a surface perpendicular to the electric field direction in the waveguide and may be formed on the dielectric waveguide resonator unit 110 or on the dielectric waveguide unit 120. 5 and 6, it can be seen that the device characteristic adjusting unit 130 is formed on the upper side of the dielectric waveguide resonator 110 and the dielectric waveguide coupling unit 120, respectively. 5 and 6 are a perspective view and a plan view of the dielectric waveguide device of FIG. 2 before connection of the conductive connection, respectively.

The conductive connection portion 140 selectively connects the different internal conductive portions 134 formed in the plurality of element characteristic adjusting portions 130, respectively. 5 and 6, the device characteristic adjuster 130 further includes a dielectric exposed portion 132 where the dielectric of the dielectric waveguide is exposed, an internal conductive portion 134 electrically isolated from each other by the dielectric exposed portion 132, And an outer conductive portion 136 is shown. At this time, the conductive connection part 140 can selectively connect between the different internal conductive parts 132 by a wire.

Figs. 7 and 8 are graphs showing the frequency characteristics of the dielectric waveguide filter of Figs. 5 and 2, respectively. In FIG. 8, an example is shown in which the attenuation characteristics are adjusted by generating a phase difference in the resonator portion 110 using a bonding wire. In the circle of FIG. 8, it can be seen that a transmission zero, which did not exist in FIG. 7, is generated.

FIGS. 9 and 10 are a dielectric waveguide filter perspective view and a plan view, respectively, in the case where the conductive connection portion performs selective connection different from FIG. 2, and FIG. 11 is a graph showing the frequency characteristics of the dielectric waveguide filter of FIG. Unlike FIG. 8, it can be seen that two transmission zeroes are generated in FIG.

At this time, the conductive connection part 140 can connect the element characteristic adjusting parts 130 formed in the two dielectric waveguide resonator parts 110-1 and 110-4 located at the outermost side of the plurality of dielectric waveguide resonator parts 110 to each other have. 9 shows an example in which the conductive connection part 140 is connected to the element characteristic adjusting parts 130 formed on the outermost two resonator parts 110-1 and 110-4 of the four dielectric waveguide resonator parts 110, Can be confirmed.

The conductive connection unit 140 includes a device characteristic adjusting unit 130 formed on one of two dielectric waveguide resonator units 110-1 and 110-4 located on the outermost side of the plurality of dielectric waveguide resonator units 110, The element characteristic adjusting unit 130 formed in the dielectric waveguide resonator units 110-2 and 110-3 located between the two outer dielectric waveguide resonators 110-1 and 110-4 can be connected to each other. 2, the conductive connection unit 140 includes a plurality of dielectric waveguide resonator units 110 each having a resonance unit 110-1 and an inner resonance unit 110-3, ) Are connected to each other.

The conductive connection portion 140 may be formed in a plurality of predetermined connections. At this time, the conductive connection portion 140 to be connected may be variously selected depending on the required filter characteristics. FIGS. 12 to 14 and FIGS. 15 to 17 are graphs of a perspective view, a plan view, and a frequency characteristic of two dielectric waveguide filters having a plurality of connections between different device characteristic adjusters, respectively.

Although two bonding wires are used in both FIG. 12 and FIG. 15, there is a difference in the connection position of one of the two bonding wires. The difference in frequency characteristics due to such difference can be confirmed in FIG. 14 and FIG. Table 4 shows the frequency characteristics of the bonding wires according to their connection positions and number of connections.

connect Org 1-3 1-4 1-4_2 1-3, 1-4 Tz1 [GHz] None 25.2 25.5 24.9 Tz2 [GHz] None 31.56 33.8 32.8 31.23

In Table 4, Org denotes the state of FIG. 5 in which the bonding wires are not connected, 1-3 denotes the bonding wire connection state shown in FIG. 2, 1-4 denotes the bonding wire connection state shown in FIG. 9, 15, and reference numerals 1-3 and 1-4 denote the bonding wire connection states shown in FIG. 12, respectively.

7, 8, 11, 17 and 14, which are graphs of frequency characteristics corresponding to the connection states of Figs. 5, 2, 9, 15 and 12, (Transmission Zero), which is the x-coordinate value of the points indicated by Rej1 and Rej2 in each graph.

In addition, the distance between the conductive connection portion 140 and the waveguide can be set according to the characteristics of the dielectric waveguide device set in advance. That is, the attenuation characteristics of the dielectric waveguide filter can be adjusted by adjusting the height of the bonding wire.

FIGS. 18 and 19 are schematic views showing examples in which the height of the bonding wire from the dielectric waveguide is 0.1 mm and 0.7 mm, respectively, and FIG. 20 shows the frequency characteristics of the dielectric waveguide varying with different heights Graph. In FIG. 20, frequency characteristics of the dielectric waveguide depending on the bonding wire can be confirmed. In FIG. 20, it can be seen that as the height of the wire increases, the frequency of the generated transmission zero becomes larger.

Wire height
[mm] 0.1 0.2 0.3 0.5 0.7 Tz
[GHz] 32.26 33.8 34.56 35.44 35.63

H0, H3, H5 and H7 in Fig. 20, Tz is the frequency value of the transmission zero corresponding to the wire height, and Fig. 20 H, H2, H3, H5, and H7, respectively.

In summary, the present invention relates to a method and apparatus for creating and adjusting a transmission zero pole by connecting a bonding wire between the pad on the top of the ceramic filter and the pad to provide a phase difference between the ceramic cavities connected to the bonding wire . According to the present invention, it is possible to improve the attenuation characteristics of adjacent bands and adjust the attenuation characteristics according to the length and the quantity of the bonding wires.

Although the present invention has been described in terms of some preferred embodiments, the scope of the present invention should not be limited thereby but should be modified and improved in accordance with the above-described embodiments.

100: dielectric waveguide filter
110: dielectric waveguide resonance part
120: dielectric waveguide coupling portion
130:
132: dielectric exposed portion
134: internal conductive part
136: outer conductive part
140:

Claims (20)

A plurality of device characteristic adjusting units formed on a predetermined area of an outer surface of the dielectric waveguide; And
And a conductive connection portion for selectively connecting the plurality of device characteristic adjusting portions, wherein the device characteristic adjusting portion comprises:
A dielectric exposed portion in which a dielectric of the dielectric waveguide is exposed; And
An inner conductive portion electrically isolated by the dielectric exposed portion and an outer conductive portion,
Wherein the conductive connection portion selectively connects between different internal conductive portions formed in the plurality of device characteristic adjusting portions.
The dielectric waveguide device according to claim 1,
A plurality of dielectric waveguide resonators; And
And a dielectric waveguide coupling unit coupling the dielectric waveguide resonators to each other.
The method according to claim 1,
And the device characteristic adjusting unit is formed on a plane perpendicular to an electric field direction in the waveguide.
The method of claim 3,
And the device characteristic adjusting unit is formed in a resonance part of the dielectric waveguide.
The method of claim 4,
Wherein the conductive connection portion connects device characteristic adjusters formed in different outer dielectric waveguide resonators located at the outermost ones of the plurality of dielectric waveguide resonators.
The method of claim 4,
Wherein the conductive connection portion includes an element characteristic adjusting portion formed in one of different outer dielectric waveguide resonators located at the outermost one of the plurality of dielectric waveguide resonator portions and an element characteristic adjusting portion formed in an inner dielectric waveguide resonator portion located between the outer dielectric waveguide resonator portion And the characteristic adjusting portions are connected to each other.
The method of claim 3,
And the device characteristic adjusting unit is formed at a coupling portion of the dielectric waveguide.
The method of claim 3,
Wherein the conductive connection portion selectively connects the different internal conductive portions with a wire.
The method of claim 8,
Wherein the conductive connection portions are formed in a plurality of predetermined configurations.
The method of claim 8,
Wherein a distance between the conductive connection portion and the waveguide is set according to a predetermined characteristic of the dielectric waveguide device.
A method for manufacturing a dielectric waveguide device including a plurality of device characteristic adjusting portions in which a dielectric region surrounding an inner conductive region is formed in a predetermined area on an outer surface of a dielectric waveguide,
Forming a dielectric exposed region in which a dielectric of the dielectric waveguide is exposed in a predetermined region of a conductive film formed on an outer surface of the dielectric waveguide element; And
And a conductive coupling step of selectively connecting the plurality of internal conductive regions formed in the plurality of device characteristic adjusting units to each other.
[12] The method of claim 11,
A plurality of dielectric waveguide resonators; And
And a dielectric waveguide coupling unit coupling the dielectric waveguide resonators to each other.
The method of claim 11,
Wherein the dielectric exposed region forming step forms the dielectric exposed region on a plane perpendicular to an electric field direction in the waveguide.
14. The method of claim 13,
Wherein the dielectric exposed region is formed in the dielectric waveguide resonator.
15. The method of claim 14,
Wherein the conductive connection step connects the element characteristic adjusting units formed in the outer dielectric waveguide resonator units located at the outermost ones of the plurality of dielectric waveguide resonators to each other.
15. The method of claim 14,
The conductive connection step may include a device characteristic adjusting unit formed in one of the plurality of outer dielectric waveguide resonator units located at the outermost one of the plurality of dielectric waveguide resonator units and an inner dielectric waveguide resonator unit formed between the outer dielectric waveguide resonator unit and the inner dielectric waveguide resonator unit And the device characteristic adjusting portions are connected to each other.
14. The method of claim 13,
Wherein the dielectric exposed region is formed in the dielectric waveguide coupling portion.
14. The method of claim 13,
Wherein the conductive connection step selectively connects the different internal conductive parts with a wire.
19. The method of claim 18,
Wherein the conductive connection step comprises forming a plurality of connection of the wires in advance.
19. The method of claim 18,
Wherein a distance between the wire and the waveguide is set according to a predetermined characteristic of the dielectric waveguide device.

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