KR20180032086A - Thin-film depositing apparatus and thin-film depositing method - Google Patents

Abstract

Various embodiments related to a thin-film deposition apparatus and a method thereof are described. According to one embodiment of the present invention, the thin-film deposition apparatus comprises: a vacuum chamber; a rotation jig disposed in the vacuum chamber, and mounting deposited materials to be rotated by a rotation unit; a vaporizer disposed at a lower portion of the rotation jig to evaporate deposition materials; and at least one correction mask disposed on a front surface of the vaporizer to control a transmission amount of the deposition materials so as to be deposited on the deposited materials. The correction mask has at least one transmission unit of which sizes are different so as to control the transmission amount of the deposition materials in accordance with a distance difference between the deposited materials and the vaporizer. In addition, various embodiments can be provided.

Description

[0001] THIN-FILM DEPOSITING APPARATUS AND THIN-FILM DEPOSITING METHOD [0002]

Various embodiments of the present invention are directed to a thin film deposition apparatus and method capable of uniformly depositing a thin film thickness of a deposited material.

In recent years, mobile phones, MP3 players, portable multimedia players (PMPs), tablet PCs, Galaxy tabs, iPads and electronic book terminals and various electronic devices have been provided to users. .

Such an electronic device has a window for protecting the screen of a display device, and adopts a CMF (Color Filled Material) effect that shines the surface of the electronic device like a metallic color and a jewel.

The CMF effect is realized by the printing film method, which is a method of manufacturing a pattern for an optical effect with a resin on a PET film, depositing a multilayer thin film composed of 3 to 5 layers on the patterned resin, A printing film is manufactured through a process of printing a light blocking layer. Such a print film is produced by laminating a transparent window or a cover.

The shiny optical effect (interference, moire) is emitted from the resin pattern layer, and the metallic hue is realized through the multilayer thin film. This thin film can be implemented by a process called E-beam evaporation.

Here, the electron beam evaporation method is a method in which an evaporation material is heated using an electron beam and a pressure inside the vacuum chamber is reduced by a vacuum pump to vaporize the evaporation material to coat the evaporation material.

That is, the electron beam evaporation method is a principle in which an evaporation material is irradiated with an electron beam and heated.

For example, a dome jig is provided in a vacuum chamber, and an evaporation source is disposed in a lower portion of the dome jig. In this state, an evaporation material is disposed inside the dome jig, and the evaporation source applies an electron beam To evaporate the evaporation material.

At this time, there may occur a difference in thickness of the thin film deposited by the position of the deposited material disposed on the dome jig provided in the vacuum chamber.

In the conventional dome jig and evaporation source, there may occur a difference in distance between the evaporated material disposed on the dome-shaped jig and the evaporation source, that is, the evaporated material disposed at the center position of the dome jig is disposed at the greatest distance from the evaporation source, The evaporation material disposed at the edge position of the evaporation source can be disposed at the closest distance from the evaporation source. In this state, when the evaporation source injects the evaporation material, the deposited material disposed at the farthest distance has a thin thickness and the deposited material disposed at the closest distance has a thick thickness.

In other words, in the conventional dome jig and the evaporation source, the thickness of the thin film was varied due to the difference in distance from the evaporation source of the evaporation material disposed according to the loading position. As a result, the defect rate of the product was increased.

As a result, there is a demand for a device capable of preventing the thickness deviation of the deposited material from occurring.

Accordingly, in various embodiments of the present invention, in order to control the amount of permeation of the evaporation material in accordance with the difference in distance between the evaporated material and the evaporation source (e.g., crucible) in the vacuum chamber, The present invention also provides a thin film deposition apparatus and method that can prevent the occurrence of defects in a product while preventing the generation of foreign substances in the vacuum chamber while ensuring uniformity of the thickness of the deposited material.

According to various embodiments of the present invention, a thin film deposition apparatus includes: a vacuum chamber; A rotary jig provided in the vacuum chamber, the rotary jig mounted with the objects to be deposited and rotated by the rotary unit; An evaporation source provided at a lower portion of the rotary jig to vaporize the evaporation material; And at least one correction mask disposed on the front surface of the evaporation source and adjusting the amount of permeation of the deposition material to deposit the deposition material on the deposition material.

And the correction mask may include at least one transmissive portion having a different size to control the amount of the evaporation material depending on the difference in distance between the evaporation material and the evaporation source.

According to various embodiments of the present invention, a thin film deposition method includes the steps of mounting a deposition material on a rotary jig provided in a vacuum chamber; Heating the evaporation source provided at the lower portion of the rotary jig to vaporize the evaporation material in the evaporation source in the vacuum chamber; Wherein the correction mask which transmits the evaporation material to the correction mask disposed on the front surface of the evaporation source and the correction mask which forms the at least one transmissive portion of the different size has a transmission amount of the evaporation material according to a difference in distance between the evaporation material and the evaporation source And depositing the controlled deposition material on the deposited material.

According to various embodiments of the present invention, for example, there is a method of controlling the amount of deposition of the evaporation material on the front surface of the evaporation source provided in the vacuum chamber by varying the size of the evaporation source (e.g., crucible) (For example, a through hole) of the substrate to form a correction mask, thereby ensuring the uniformity of the thickness of the film to be deposited in the vapor deposition step, as well as lowering the defective rate of the product. It is possible to improve the production amount. In addition, since the correction mask is disposed on the front surface of the evaporation source, replacement and cleaning operations are facilitated when the correction mask is replaced, and maintenance and repair costs of the product can be reduced and foreign matter generation can be prevented.

1 is a perspective view showing a configuration of a thin film deposition apparatus according to various embodiments of the present invention.
2 is a perspective view illustrating the structure of a thin film deposition apparatus according to various embodiments of the present invention.
3 is a perspective view showing an operation state of a correction mask in the structure of a thin film deposition apparatus according to various embodiments of the present invention.
4 is a side cross-sectional view showing an operating state of a correction mask in the structure of a thin film deposition apparatus according to various embodiments of the present invention.
5 is a flowchart illustrating a method of forming a thin film of a material to be deposited using a thin film deposition apparatus according to various embodiments of the present invention.
6 is a perspective view showing a print film produced by a thin film deposition apparatus according to various embodiments of the present invention.
7 is a view showing a state where a print film produced by a thin film deposition apparatus according to various embodiments of the present invention is applied to a cover of an electronic apparatus.
8 is a perspective view showing another embodiment of the correction mask in the construction of the thin film deposition apparatus according to various embodiments of the present invention.
9 is a perspective view showing another embodiment of the correction mask in the construction of the thin film deposition apparatus according to various embodiments of the present invention.
10 is a perspective view showing still another embodiment of the correction mask in the construction of the thin film deposition apparatus according to various embodiments of the present invention.
11 is a perspective view showing another embodiment of the correction mask in the construction of the thin film deposition apparatus according to various embodiments of the present invention.
12 is a perspective view showing still another embodiment of the correction mask in the construction of the thin film deposition apparatus according to various embodiments of the present invention.
13 is a plan view showing another embodiment of the correction mask in the construction of the thin film deposition apparatus according to various embodiments of the present invention.

Various embodiments of the invention will now be described with reference to the accompanying drawings. It should be understood, however, that the description herein is not intended to limit the invention to the particular embodiments, but includes various modifications, equivalents, and / or alternatives of the embodiments of the invention . In connection with the description of the drawings, like reference numerals may be used for similar components.

In the present invention, the expression "having," " having, "" comprising," Quot ;, and does not exclude the presence of additional features.

In the present invention, the expression "A or B," "at least one of A or / and B," or "one or more of A and / or B," etc. may include all possible combinations of the listed items . For example, "A or B," "at least one of A and B," or "at least one of A or B" includes (1) at least one A, (2) Or (3) at least one A and at least one B all together.

The terms "first," "second," "first," or "second," etc. used in the present invention may be used to denote various components, regardless of their order and / or importance, But is used to distinguish it from other components and does not limit the components. For example, the first user equipment and the second user equipment may represent different user equipment, regardless of order or importance. For example, without departing from the scope of the invention described in the present invention, the first component can be named as the second component, and similarly, the second component can also be named as the first component.

(Or functionally or communicatively) coupled with / to "another component (eg, a second component), or a component (eg, a second component) Quot; connected to ", it is to be understood that any such element may be directly connected to the other element or may be connected through another element (e.g., a third element). On the other hand, when it is mentioned that a component (e.g., a first component) is "directly connected" or "directly connected" to another component (e.g., a second component) It can be understood that there is no other component (e.g., a third component) between other components.

The phrase " configured to be used "as used in the present invention means that, depending on the situation, for example," having the capacity to, To be designed to, "" adapted to, "" made to, "or" capable of ". The term " configured to (or set up) "may not necessarily mean" specifically designed to "in hardware. Instead, in some situations, the expression "configured to" may mean that the device can "do " with other devices or components. For example, a processor configured (or configured) to perform the phrases "A, B, and C" may be implemented by executing one or more software programs stored in a memory device or a dedicated processor (e.g., an embedded processor) , And a generic-purpose processor (e.g., a CPU or an application processor) capable of performing the corresponding operations.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the other embodiments. The singular expressions may include plural expressions unless the context clearly dictates otherwise. Terms used herein, including technical or scientific terms, may have the same meaning as commonly understood by one of ordinary skill in the art. The general predefined terms used in the present invention can be interpreted in the same or similar meaning as the contextual meanings of the related art, and, unless expressly defined in the present invention, mean ideal or overly formal meanings . In some cases, the terms defined in the present invention can not be construed as excluding the embodiments of the present invention.

Electronic devices in accordance with various embodiments of the present invention may include, for example, a smartphone, a tablet personal computer, a mobile phone, a video phone, an e-book reader, A desktop personal computer, a laptop personal computer, a netbook computer, a workstation, a server, a personal digital assistant (PDA), a portable multimedia player (PMP) A medical device, a camera, or a wearable device. According to various embodiments, the wearable device may be of the accessory type (e.g., a watch, a ring, a bracelet, a bracelet, a necklace, a pair of glasses, a contact lens or a head-mounted-device (HMD) (E. G., Electronic apparel), a body attachment type (e. G., A skin pad or tattoo), or a bioimplantable type (e.g., implantable circuit).

In some embodiments, the electronic device may be a home appliance. Home appliances include, for example, televisions, digital video disc (DVD) players, audio, refrigerators, air conditioners, vacuum cleaners, ovens, microwaves, washing machines, air cleaners, set- Such as a home automation control panel, a security control panel, a TV box such as Samsung HomeSync ^TM , Apple TV ^TM or Google TV ^TM , a game console such as Xbox ^TM and PlayStation ^TM , , An electronic key, a camcorder, or an electronic frame.

In an alternative embodiment, the electronic device may be any of a variety of medical devices (e.g., various portable medical measurement devices such as a blood glucose meter, a heart rate meter, a blood pressure meter, or a body temperature meter), magnetic resonance angiography (MRA) Navigation systems, global navigation satellite systems (GNSS), event data recorders (EDRs), flight data recorders (FDRs), infotainment (infotainment) systems, ) Automotive electronic equipment (eg marine navigation systems, gyro compass, etc.), avionics, security devices, head units for vehicles, industrial or home robots, automatic teller's machines (ATMs) Point of sale, or internet of things (eg, light bulbs, various sensors, electrical or gas meters, sprinkler devices, fire alarms, thermostats, street lights, Of the emitter (toaster), exercise equipment, hot water tank, a heater, boiler, etc.) may include at least one.

According to some embodiments, the electronic device is a piece of furniture or a part of a building / structure, an electronic board, an electronic signature receiving device, a projector, Water, electricity, gas, or radio wave measuring instruments, etc.). In various embodiments, the electronic device may be a combination of one or more of the various devices described above. An electronic device according to some embodiments may be a flexible electronic device. In addition, the electronic device according to the embodiment of the present invention is not limited to the above-described devices, and may include a new electronic device according to technological advancement.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An electronic apparatus according to various embodiments will now be described with reference to the accompanying drawings. In the present invention, the term user may refer to a person using an electronic device or an apparatus using an electronic device (e.g., an artificial intelligence electronic device).

Such an electronic device is provided with a display, and a window and a cover can be provided to protect the display and the electronic device from the surface. For example, a printing film can be formed to provide a metal-like color and a glittering effect on the window and the cover. The printing film has a film layer (PET film), a resin pattern layer and a resin pattern layer A vapor deposition layer formed on the surface, a color printing layer provided on the back surface of the vapor deposition layer, and a light blocking layer provided on the back surface of the color printing layer. The printing film on which such a multilayer thin film layer is formed can be produced by laminating to a window or a cover. Thus, the glittering optical effect of the window and cover can be realized through the multilayer thin film layer of the print film.

In this embodiment, the above-mentioned printing film will be described by way of example, but not limited to, a window and a cover of the above-described electronic device. That is, it can be applied to a variety of products other than electronic devices, in order to realize a metal-like color and a shiny effect like a jewel. Hereinafter, a printing film applied to a window and a cover of an electronic apparatus will be described in this embodiment.

The construction of the thin film deposition apparatus 10 according to various embodiments of the present invention will be described in detail as follows.

1 is a perspective view showing a configuration of a thin film deposition apparatus 10 according to various embodiments of the present invention.

1, the thin film deposition apparatus 10 includes a vacuum chamber 20, a rotary jig 30, a rotation unit 40, an evaporation source 50, a heating unit 21, and at least one correction mask 60, And the vacuum chamber 20 can be depressurized using a vacuum pump. For example, the pressure inside the vacuum chamber 20 can be reduced to a level of one-tenth of the atmospheric pressure. The vacuum chamber 20 may include a rotary jig 30, a rotary unit 40, an evaporation source 50, a heating unit 21, and a correction mask 60.

The rotary jig 30 may be installed in the vacuum chamber 20 so as to rotate by the rotation unit 40 while mounting the objects to be deposited 11.

The evaporation source 50 is heated by the heating device 21 to decompress the internal pressure of the vacuum chamber 20 to vaporize the evaporation materials A1, A2, A3, As shown in FIG.

The heating device 21 may be installed in the vacuum chamber 20 to heat the evaporation source 50.

The correction mask 60 may be disposed on the front surface of the evaporation source 50 so as to adjust the amount of the deposition materials A1, A2, and A3 to be deposited on the objects 11 to be deposited.

For example, the correction mask 60 may have a different size to control the permeation amount of the evaporation materials A1, A2, and A3 depending on the difference in distance between the evaporation material 11 and the evaporation source 50. For example, By forming at least one transmissive portion 70, not only the thin film thickness of the material to be deposited 11 can be uniformly deposited, the defective rate of the product caused by the unevenness of the thin film thickness can be reduced, It is possible to prevent the generation of foreign matter

The at least one transmissive portion 70 may include a through hole having a different size to transmit the deposition materials A1, A2, and A3.

In addition, the vacuum chamber 20 may include a vacuum pump, a vacuum gauge, a gas injector, a gas analyzer, an ion generator, and a deposition material heating apparatus.

The rotary jig 30 may include a dome shape or a dish shape. For example, many objects to be deposited 11 can be mounted in the dome-shaped rotary jig 30 at a time. In this embodiment, the rotary jig 30 may have a shape other than a dome shape or a dish shape. That is, the present invention can be applied variously as long as it is capable of mounting many objects to be deposited 11 on the rotary jig 30 at a time.

The evaporation source 50 may include any one of iridium, platinum, molybdenum, tungsten, tantalum, copper, silicon oxide, silicon nitride, silicon carbide, zirconium oxide, aluminum oxide and graphite, May be made of an alloy including at least two of iridium, platinum, molybdenum, tungsten, tantalum, copper, silicon oxide, silicon nitride, silicon carbide, zirconium oxide, aluminum oxide and graphite. The evaporation source 50 may be made of other metal materials other than the above-described iridium, platinum, molybdenum, tungsten, tantalum, copper, silicon oxide, silicon nitride, silicon carbide, zirconium oxide, aluminum oxide and graphite.

The heating device 21 for heating the evaporation source 50 may include any one of resistance heating, induction heating, and electron beam heating. In the present embodiment, the heating device 21 is exemplified by resistance heating, induction heating, and electron beam heating, but is not limited thereto. That is, the heating device 21 may be variously used as long as it is a device for heating the evaporation source 50.

The objects to be deposited 11 may be included as a print film 400. The print film 400 may be formed by depositing a thin film and then laminating the thus formed print film on the window and cover 500 of the electronic device (CMF) effect that shines the surface of an electronic device like a metal-like color and jewels.

Hereinafter, the assembly of the thin film deposition apparatus 10 according to various embodiments of the present invention will be described with reference to FIG.

1, the thin film deposition apparatus 10 includes, for example, a vacuum chamber 20, a rotary jig 30, an evaporation source 50, a heating device 21, and a correction mask 60, The vacuum chamber 20 may include a vacuum pump, a vacuum gauge, a gas injector, a gas analyzer, an ion generator, and a deposition material heating apparatus.

A rotary part 40 is provided in the vacuum chamber 20 and the rotary part 40 can rotate the rotary jig 30. [ The rotary jig 30 is installed on the upper portion of the vacuum chamber 20 and can be rotated by the rotation unit 40. An evaporation source 50 may be provided below the rotary jig 30 and a correction mask 60 may be disposed on the entire surface of the evaporation source 50. [

The correction mask 60 will be described in more detail with reference to FIGS. 2 to 4. FIG.

2 is a perspective view showing a structure of a correction mask 60 in the structure of a thin film deposition apparatus according to various embodiments of the present invention, and FIG. 3 is a perspective view illustrating a structure of a correction mask 60 in a structure of a thin film deposition apparatus according to various embodiments of the present invention. FIG. 4 is a side cross-sectional view showing an operating state of the correction mask 60 in the structure of the thin film deposition apparatus according to various embodiments of the present invention.

Referring to FIG. 2, the correction mask 60 includes first, second and third regions R1, R2, and R3, wherein the first region R1 includes at least one second, At least one first transmitting portion 61 may be formed larger than the first transmitting portions 61 and 62. The second region R2 may form at least one second transmissive portion 62 formed to be smaller than the at least one first transmissive portion 61. The third region R3 may form a third transmissive portion 63 that is smaller than the at least one first transmissive portion 61 and is formed to be larger than the at least one second transmissive portion 62. [

The correction mask may further include a plurality of regions other than the first, second, and third regions. For example, the correction mask may comprise a fourth region formed by selecting any one of the first, second and third transmissive portions, and wherein the correction mask further comprises one of the first, second and third transmissive portions And a fifth region and a sixth region that are selectively formed. Thus, the correction mask may comprise at least one region forming a transmissive portion of various sizes.

3 and 4, the material to be deposited 11 includes first, second and third objects to be deposited 11a, 11b and 11c, And the second deposited material (11b) is disposed around the periphery of the edge of the rotary jig, and the distance between the second evaporated material (11b) and the evaporation source is different from that of the evaporation source And the third deposited material 11c may be disposed in the rotary jig and disposed between the first and second deposited materials.

The at least one first transmissive portion 61 may be disposed on the front surface of the evaporation source 50 and the at least one second transmissive portion 62 may be provided to increase the transmittance of the evaporation material A1. And the distance L1 between the first deposited material 11a and the evaporation source 50 can be increased. For example, the at least one first transmissive portion 61 may have a large difference in distance between the first deposited material 11a and the evaporation source 50, And the evaporation source 50 may be farther from the evaporation source 50 than the second and third transmissive portions 62 and 63 due to the large amount of the evaporation material A1. Accordingly, the at least one first transmissive portion 61 transmits a large amount of the evaporation material A1, thereby increasing the deposition rate of the evaporation material A1 in the first evaporation material 11a.

The at least one second transmissive portion 62 is formed to be smaller than the first at least one first transmissive portion 61 to reduce the transmittance of the evaporation material A2 and the second evaporated material 11b, The distance difference L2 between the evaporation sources 50 can be reduced. For example, the at least one second transmissive portion 62 may be formed to have a smaller difference L2 between the evaporation material 11 and the evaporation source 50 than the size of the at least one first transmissive portion And the deposition rate of the deposition material (A2) can be lowered. Therefore, the second deposited material 11b disposed close to the evaporation source forms a thin film thickness by a smaller amount of the evaporation material than the first transmissive portion, and the thin film thickness is smaller than the thickness of the evaporated material deposited through the first transmissive portion 61 It is possible to uniformly match the thickness of the thin film of the deposition material 11a. That is, the at least one second transmissive portion 62 can reduce the deposition of the evaporated material A2 and reduce the deposition rate of the second evaporated material 11b. The thickness of the second deposited material 11b deposited through the at least one second transmissive portion 62 and deposited through the at least one first transmissive portion 62 may be different from the thickness of the second deposited material 11b deposited through the at least one second transmissive portion 62, The first deposited material 11a on which the material A1 is deposited may have the same thickness.

The at least one third transmissive portion 63 may be formed so that the transmittance of the evaporation material A3 is lower than that of the first transmissive portion 61 and higher than the transmissivity of the second transmissive portion 62, The distance L3 between the evaporation material 11c and the evaporation source 50 may be smaller than the distance between the first transmissive portion 61 and the second transmissive portion 62, For example, the transmissivity of the at least one third transmissive portion 63 may be formed at a middle level of the transmissivity of the first and second transmissive portions 61 and 62. 4, the third deposited material 11c is disposed between the first and second deposited materials (the first and second deposited materials) disposed in the rotary jig 30 to receive the deposition material A3 of the at least one third transmission portion 63 11a and 11b.

The first, second and third deposited materials 11a, 11b and 11c arranged in the rotary jig 30 are arranged in the first, second and third transmitting portions 61, 62 and 63, respectively, The thickness of the thin film can be made the same.

For example, the rotary jig 30 is rotated by the rotation unit 40, and the first, second and third transmission units 61, 62 and 63 of the correction mask 60 are connected to the evaporation source The thickness of the first, second and third deposited materials 11a, 11b and 11c can be uniformly controlled by adjusting the transmittance of the deposition material of the first,

The operation of the thin film deposition apparatus 10 according to various embodiments of the present invention will be described in detail as follows.

First, as shown in FIG. 4, the material to be deposited 11 can be attached to the dome-shaped rotary jig 30. FIG. For example, the first, second and third deposited materials 11a, 11b, and 11c can be sequentially attached from the center of the rotary jig 30 to the outer circumference. At this time, the first, second and third deposited materials 11a, 11b and 11c can be attached using a magnet (not shown) provided in the rotary jig 30. [ In this state, the rotary jig (30) can be rotated by the rotary part (40). The evaporation source 50 provided at the lower portion of the rotary jig 30 may be heated using the heating device 21 and the evaporation material of the evaporation source 50 may be vaporized in the vacuum chamber 20.

At this time, the evaporation source 50 can produce an evaporation material by using the E-beam evaporation method.

Since the electron beam evaporation method is a principle that irradiates the evaporation material with an electron beam and heats the evaporation material 50, the evaporation source 50 containing the evaporation material is cooled using water from the outside. At this time, A gradient (temperature gradient) may occur. A diffusion profile of the evaporation material (a profile shape in which more evaporation material diffuses and distributes from the higher temperature portion) is produced by the temperature gradient (temperature gradient) generated in the evaporation source 50.

That is, in the electron beam evaporation method, the deposition material of the evaporation source 50 is heated using an electron beam, and the deposition material is vaporized by reducing the internal pressure of the vacuum chamber 20 by a vacuum pump (not shown) (11) to form a thin film.

For example, the correction mask 60 disposed on the front surface of the evaporation source 50 transmits the evaporation material vaporized and raised, and the correction mask 60 (see FIG. 1), which forms the at least one transmissive portion 70 of the different size, And the deposition material is deposited on the material to be deposited 11 to form a thin film.

The at least one first transmissive portion 61 formed on the correction mask 60 may be formed on the first deposited material 11a and the evaporation source 50 when the vaporized deposition material transmits the correction mask 60. [ The second transmissive portion 62 may be formed larger than the second transmissive portion 62 in order to increase the transmissivity of the evaporation material. Accordingly, a large amount of evaporation material (A1) is transmitted through the at least one first transmission portion (61), and the first deposited material (11a) disposed at the center of the rotary jig (30) is coated to form a thin film .

The second objects to be deposited 11b attached to the outer periphery of the rotary jig 30 may be coated with the deposition material that is transmitted through the at least one second transmission portion 62 to form a thin film. For example, since the distance L2 between the second evaporated material 11b attached to the outer periphery of the rotary jig 30 and the evaporation source 50 is close to that of the evaporation source 50, the transmittance of the evaporation material must be lowered, The second transmissive portion 62 may be formed to be smaller than the size of the at least one first transmissive portion 61. As described above, a small amount of the evaporated material is transmitted by the at least one second transparent portion 62 and a small amount of the evaporated material A2 is coated on the second deposited material 11b to form a thin film can do.

The third deposited material 11c attached to the rotating jig 30 may be deposited by the deposition material A3 transmitted through the at least one third transmission portion 63. [ The transmittance of the evaporation material (A3) may be lower than the first transmissive portion (61) and higher than the second transmissive portion (62). That is, the third material to be deposited 11c may be disposed at a position smaller than the distance between the first transmitting portions 61 and larger than the distance L3 between the second transmitting portions 62. Therefore, the third transmitting portion 63 is smaller than the first transmitting portion 61 and is larger than the second transmitting portion 62, so that the amount of the deposition material A3 can be controlled. In other words, the at least one third transmission portion 63 can transmit the amount of permeation of the evaporation material A3 to a medium amount of the permeation amount of the first and second transmission portions 61, 63.

According to various embodiments of the present invention, the thin film deposition apparatus includes a vacuum chamber; A rotary jig provided in the vacuum chamber, the rotary jig mounted with the objects to be deposited and rotated by the rotary unit; An evaporation source provided at a lower portion of the rotary jig to vaporize the evaporation material; And at least one correction mask disposed on a front surface of the evaporation source and configured to adjust a permeation amount of the evaporation material to deposit the evaporation material on the evaporation material, At least one transmissive portion of different sizes may be formed to control the amount of permeation of the deposition material.

According to various embodiments of the present invention, the vacuum chamber may include a vacuum pump, a vacuum gauge, a gas injector, a gas analyzer, an ion generator, and a deposition material heating apparatus.

According to various embodiments of the present invention, the evaporation source comprises any one of iridium, platinum, molybdenum, tungsten, tantalum, copper, silicon oxide, silicon nitride, silicon carbide, zirconium oxide, aluminum oxide and graphite, The evaporation source may be made of an alloy containing at least two of iridium, platinum, molybdenum, tungsten, tantalum, copper, silicon oxide, silicon nitride, silicon carbide, zirconium oxide, aluminum oxide and graphite.

According to various embodiments of the present invention, the vacuum chamber further includes a heating device for heating the evaporation source, and the heating device may include any one of resistance heating, induction heating, and electron beam heating.

According to various embodiments of the present invention, the transmissive portion may be formed as a transmissive hole having a different size.

According to various embodiments of the present invention, the deposited material may be included as a printing film.

According to various embodiments of the present invention, the correction mask comprises a first region defining at least one first transmissive portion; A second region forming at least one second transmissive portion formed to be smaller than the at least one first transmissive portion; And a third region that is smaller than the at least one first transmissive portion and forms a third transmissive portion that is larger than the at least one second transmissive portion.

According to various embodiments of the present invention, the material to be deposited is disposed at the center of the rotary jig, and is provided at a position where a distance difference from the evaporation source is largely changed. A second deposited material disposed around the periphery of the rotary jig and provided at a position where a distance difference from the evaporation source is small; And a third deposited material disposed in the rotary jig, the third deposited material disposed between the first and second deposited objects.

According to various embodiments of the present invention, the at least one first transmissive portion is formed to be larger than the size of the at least one second transmissive portion to increase the transmittance of the evaporation material, and the at least one first transmissive portion is formed between the first evaporated material and the evaporation source Wherein the at least one second transmissive portion is formed to be smaller in size than the first at least one first transmissive portion to lower the transmittance of the evaporation material, Wherein the at least one third transmissive portion has a transmittance lower than that of the first transmissive portion and higher than a transmittance ratio of the second transmissive portion, and the at least one third transmissive portion has a transmittance lower than that of the first transmissive portion, Is formed to be smaller than the distance difference of the first transmitting portion and larger than the distance difference of the second transmitting portion Can.

The thin film forming process of the material to be deposited 11 using the thin film deposition apparatus 10 according to various embodiments of the present invention will be described in detail as follows.

5 is a flowchart showing a method of forming a thin film of the material to be deposited 11 using the thin film deposition apparatus 10 according to various embodiments of the present invention.

A method of forming a thin film on the deposited material 11 will be described with reference to FIG. First, the deposited material 11 can be mounted on the rotary jig 30 provided in the vacuum chamber 20. (S1)

The material to be deposited 11 can be sequentially mounted from the center of the rotary jig 30 to the outer periphery. in this condition. The rotary jig 30 can be rotated by the rotary part 40.

The deposition material of the evaporation source 50 may be vaporized in the vacuum chamber 20 by heating the evaporation source 50 provided at the lower portion of the rotary jig 30 from the step S1.

For example, when the evaporation source 50 is heated, the evaporation material may be vaporized and raised in the vacuum chamber 20 in a vacuum state.

From S2, the deposition material rising to the correction mask 60 disposed on the front surface of the evaporation source 50 can be transmitted. The correction mask 60 having at least one transmissive portion 70 of different sizes adjusts the amount of the evaporation material to be permeated according to a difference in distance between the evaporation material 11 and the evaporation source 50 The controlled deposition material may be deposited on the deposited material 11. (S3)

The first region R1 may include at least one first transmissive portion 61 formed in the correction mask 60 during the deposition of the deposition material through the correction mask 60, The first transmitting portion 61 can transmit the evaporation material A1. And a second region (R2) in which at least one second transmissive portion (62) formed to be smaller than the at least one first transmissive portion (61) is formed in the correction mask (60), and the at least one second transmissive portion (62) may transmit the deposition material (A2), and the correction mask (60) may have a third mask (60) formed on the third mask And a third region R3 formed with a transmissive portion 63. The third transmissive portion 63 can transmit the evaporation material A3.

The at least one first transmissive portion 61 formed in the correction mask 60 is formed to have a size larger than the size of the at least one second transmissive portion 62 to increase the transmittance of the evaporation material A1, The difference L1 between the first evaporation material 11a and the evaporation source 50 can be increased. At this time, since the distance L1 between the first deposited material 11a and the evaporation source 50 is large, the transmittance of the deposited material A1 is May be larger than the size of the at least one second transmission portion (62). Accordingly, a large amount of evaporation material (A1) is transmitted through the at least one first transmission portion (61), and the first deposited material (11a) disposed at the center of the rotary jig (30) is coated to form a thin film .

The at least one second transmissive portion 62 is formed to be smaller than the size of the at least one first transmissive portion 61 so as to lower the transmittance of the evaporation material A2 and the second evaporated material 11b, The distance difference L2 between the first and second electrodes 50 can be reduced. For example, the second objects to be deposited 11b attached to the outer periphery of the rotary jig 30 are coated with the evaporation material A2 that is transmitted through the at least one second transmission portion 62, . That is, since the distance between the evaporated material 11 and the evaporation source 50 attached to the outer periphery of the rotary jig 30 is set so as to lower the transmittance of the evaporated material A2, The transmissive portion 62 may be formed to be smaller than the size of the first at least one first transmissive portion 61. As described above, a small amount of the evaporation material (A2) is transmitted by the at least one second transmission portion (62) and a small amount of the evaporation material transmitted through the second transmission portion (62) coats the second evaporation material (11b) can do.

The at least one third transmission portion 63 is formed so that the transmittance of the evaporation material A3 is lower than the transmittance of the first transmissive portion 61 and higher than the transmittance of the second transmissive portion 62, The distance difference L3 between the evaporation material 11c and the evaporation source 50 may be smaller than the distance difference of the first transmissive portion 61 and larger than the distance difference of the second transmissive portion. For example, a third material to be deposited 11c adhered to the rotary jig 30 is deposited by the deposition material A3 that has been transmitted through the at least one third transmission portion 63. The transmittance of the transparent evaporation material A3 may be lower than the first transmissive portion 61 and higher than the second transmissive portion 62. That is, the distance L3 between the third evaporation material 11c attached to the rotary jig 30 and the evaporation source 50 is smaller than the distance difference L1 between the first transmissive portion 61 and the second transmissive portion 61, The third transmissive portion 63 is formed to be smaller than the first transmissive portion 61 and larger than the second transmissive portion 62 so that the deposition material (A3) can be controlled. In other words, the at least one third transmitting portion 63 can transmit the amount of permeation of the evaporation material A3 to a medium amount of the permeation amount of the first and second transmitting portions 61 and 62.

Thus, the thin film deposition apparatus 10 can uniformly form a thin film by depositing a deposition material on the first, second and third deposition targets 11a, 11b, and 11c mounted on the rotary jig 30. [ The first, second, and third deposited matter 11a, 11b, and 11c may be formed of a printing film 400 (shown in FIG. 6). The printing film 400 can be formed in a plurality of laminated structures. For example, the plurality of laminated structures include a silver film layer (PET film), a resin pattern layer on the surface, a vapor deposition layer, a color printing layer provided on the back side of the vapor deposition layer, and a light blocking layer provided on the back side of the color printing layer Lt; / RTI > A display portion (not shown) of the electronic device may be provided on the back surface of the light blocking layer.

6) may be laminated to a window (not shown) and a cover 500 (shown in Fig. 7) of the electronic device, and the print film 400 (shown in Fig. A display portion of an electronic device may be provided on the back surface of the monolayer. The display unit may be one of a touch panel, an LCD, and an organic light emitting diode (OLED).

 For example, the print film 400 (shown in FIG. 6) may be laminated to the window and cover 500 (shown in FIG. 7) to implement the effect of glittering the appearance of the electronic device as a metal- . That is, the shiny optical effect (interference, moire) is emitted from the resin pattern layer formed on the window and the cover 500, and the hue of metal feeling can be realized through a plurality of thin film layers.

According to various embodiments of the present invention, a thin film deposition method includes the steps of mounting a deposition material on a rotary jig provided in a vacuum chamber; Heating the evaporation source provided at the lower portion of the rotary jig to vaporize the evaporation material in the evaporation source in the vacuum chamber; Wherein the correction mask which transmits the evaporation material to the correction mask disposed on the front surface of the evaporation source and the correction mask which forms the at least one transmissive portion of the different size has a transmission amount of the evaporation material according to a difference in distance between the evaporation material and the evaporation source And depositing the controlled deposition material on the deposited material.

According to various embodiments of the present invention, the deposition mask may include a first region in which at least one first transmissive portion is formed in the correction mask during the deposition of the deposition material, wherein the at least one first transmissive portion And a second region through which the deposition material is transmitted and which has at least one second transmissive portion formed in the correction mask smaller than the at least one first transmissive portion and wherein the at least one second transmissive portion transmits Wherein the correction mask includes a third region smaller than the at least one first transmissive portion and forming a third transmissive portion larger than the at least one second transmissive portion, the third transmissive portion being capable of transmitting the deposition material have.

According to various embodiments of the present invention, in the process of adjusting the amount of permeation of the deposition material, the at least one first transmissive portion is larger than the size of the at least one second transmissive portion to increase the transmittance of the evaporation material Wherein the at least one second transmissive portion is formed to have a size smaller than the size of the at least one first transmissive portion so as to lower the transmissivity of the evaporation material, Wherein the at least one third transmissive portion has a transmittance lower than a transmittance of the first transmissive portion and higher than a transmittance ratio of the second transmissive portion so that the transmittance of the evaporated material is higher than that of the second transmissive portion, Wherein a difference in distance between the evaporation material and the evaporation source is smaller than a difference in distance between the evaporation source and the evaporation source, It can be formed larger than a distance difference between the second transmission portion.

The structure of the thin film deposition apparatus 10 (shown in FIG. 1) according to various other embodiments of the present invention will be described in detail as follows.

8 is a perspective view showing another embodiment of the correction mask 60 in the structure of the thin film deposition apparatus 10 according to various embodiments of the present invention.

The thin film deposition apparatus 10 may be configured to be similar or identical in configuration to at least a part of the thin film deposition apparatus described above.

In addition, the thin film deposition apparatus 10 may include a vacuum chamber, a rotary jig, a rotary part, an evaporation source, a heating device, and a correction mask. The vacuum chamber, the rotary jig, the rotary part, the evaporation source, and the heating device are the same as those shown in FIG. 1 of the previous embodiment, and a detailed description thereof will be omitted

As shown in FIG. 8, the correction mask 60 may include a mask rotation unit 80 for rotating the correction mask. The mask rotating unit 80 can rotate the substrate 11 (shown in FIG. 1) while revolving around the evaporation source 50 (shown in FIG. 1) for uniform deposition of the evaporation material B1 The correction mask 60 may be rotated to implement the effect that the mask 60 has.

The mask rotation unit 80 may include first and second gear units 81 and 82a and a rotation motor 82. [ The first gear portion 81 may be formed around the outer periphery of the correction mask 60 so as to be engaged with the second gear portion 82a described later.

The rotation motor 82 includes a second gear portion 82a that meshes with the first gear portion 81 and rotates the second gear portion 82a and rotates the first gear portion 81 So that the correction mask 60 can be rotated.

The best method for uniform deposition of the thin film on the deposited material 11 (shown in FIG. 1) is to rotate the target material while revolving around the evaporation source 50 (shown in FIG. 1). However, the conventional deposited material can not be rotated only in the revolving direction, and therefore, there is a disadvantage in that uniformity of deposition of the deposited material on the deposited material is deteriorated. In addition, in order to rotate the deposition material, rotating parts for rotating the rotary jig with the deposition material are required, which increases manufacturing cost of the thin film deposition device, thereby increasing the manufacturing cost of the product.

Therefore, the correction mask 60 disposed on the front surface of the evaporation source 50 (shown in Fig. 1) is rotated by the mask rotation unit, not by rotating the rotation jig 30 (shown in Fig. 1) ; Fig. 1) can rotate while revolving around the evaporation source. Accordingly, the correction mask 60 having the rotating asymmetric transmission portion can improve the deposition uniformity of the evaporation material B1 and does not require rotating parts for rotating the rotary jig, thereby reducing the manufacturing cost of the thin film deposition apparatus And the manufacturing cost of the deposited material can be reduced.

According to various embodiments of the present invention, the correction mask may further include a mask rotation unit for rotating the correction mask, and the mask rotation unit may be configured to rotate the substrate relative to the evaporation source for evaporation uniformity The correction mask may be rotated to implement the effect.

According to various embodiments of the present invention, the mask rotating portion may include: a first gear portion formed around an outer periphery of the correction mask; And a second gear portion meshed with the first gear portion, and a rotation motor for rotating the second gear portion and rotating the first gear portion to rotate the correction mask.

The configuration of the thin film deposition apparatus 10 (shown in FIG. 1) according to various other embodiments of the present invention will be described in detail as follows.

9 is a perspective view showing another embodiment of the correction mask in the construction of the thin film deposition apparatus according to various embodiments of the present invention.

The thin film deposition apparatus 10 may be configured to be similar or identical in configuration to at least a part of the thin film deposition apparatus described above.

In addition, the thin film deposition apparatus 10 may include a vacuum chamber, a rotary jig, a rotary part, an evaporation source, a heating device, and a correction mask. The vacuum chamber, the rotary jig, the rotary part, the evaporation source, and the heating device are the same as those shown in FIG. 1 of the previous embodiment, and a detailed description thereof will be omitted

9, the correction mask 100 includes a first correction mask 110 forming at least one first transmissive portion 111 having a different size and a second correction mask 110 forming at least one second transmissive portion 121, Lt; RTI ID = 0.0 > 120 < / RTI >

The second correction mask 120 may be stacked on the front surface of the first correction mask 110. The second correction mask 120 may be formed to have the same size so that the size of the at least one first transmissive portion 111 and the at least one second transmissive portion 121 coincide with each other, 120 may form the at least one second transmissive portion 121 of a size different from the size of the at least one first transmissive portion 111.

One conventional calibration mask (not shown) has a disadvantage in that it can not provide uniform deposition of the thin film if the diffusion profiles between the deposition materials are different or different from each other.

In order to overcome this disadvantage, first and second correction masks 30 (shown in Fig. 1) are disposed on the front surface of the evaporation source 130 in a laminated manner. In this state, the deposition material C1 of the evaporation source 130, It may pass through the first correction mask 110 and then through the second correction mask 120. The deposition material C1 having passed through the first and second correction masks 110 and 120 can form a thin film more uniformly on the deposition target 11 (shown in FIG. 1) Can be adjusted. For example, when titanium dioxide (TiO2), silicon dioxide (SiO2) is deposited on a deposition material, the first correction mask 110 is used to deposit the silicon dioxide (TiO2) The second correction mask 120 may be further provided on the entire surface of the first correction mask 110 to compensate for the difference in the diffusion profile of silicon dioxide (SiO2)

The diffusion profile refers to a profile shape in which more deposition material is diffused and distributed from a portion having a higher temperature.

Therefore, the titanium dioxide (TiO2) and the silicon dioxide (SiO2) have different diffusion profiles due to their different materials. Therefore, the first and second correction masks 110 and 120 are required to compensate for the difference in the diffusion profile.

According to various embodiments of the present invention, the correction mask comprises: a first correction mask defining at least one first transmissive portion of different sizes; And a second correction mask disposed in lamination on the front surface of the first correction mask and forming at least one second transmissive portion of the same size or different size as the first transmissive portions to be opposed to the first transmissive portions can do.

The structure of the thin film deposition apparatus 10 (shown in FIG. 1) according to still another embodiment of the present invention will be described in detail as follows.

10 is a perspective view showing another embodiment of the correction mask 200 in the structure of the thin film deposition apparatus 10 according to various embodiments of the present invention.

As shown in FIG. 10, the correction mask 200 includes first and second correction masks 210 and 220, the first correction mask 210 forms first transmission portions 211 of different sizes The second correction mask 220 may be disposed on the entire surface of the first correction mask 210 in a stacked manner and may form a circular second transmission portion 221.

For example, the second correction mask 220 may include a donut shape.

When the donut-shaped second correction mask 220 is stacked on the entire surface of the first correction mask 210, the second correction mask 220 is disposed around the periphery of the first correction mask 210 . The first transmissive portions 211 formed on the outer periphery of the first correction mask 210 face the second correction mask 220 and the second transmissive portions 221 are formed in the circular transmissive portion 221, The first transmissive portions 211 may be formed. In this state, the evaporation material C1 having passed through the first transmissive portion 211 may be deposited on the evaporation material 11 (shown in FIG. 1) through the circular second transmissive portion 221 as it is.

The first and second correction masks 210 and 220 are stacked on the entire surface of the evaporation source 230. In this state, when the evaporation material C1 of the evaporation source 230 is vaporized, After the material C1 passes through the first transmissive portion 211 of the first correction mask 210 and passes through the circular second transmissive portion 221 as it is and is deposited on the deposition material, The evaporation material C1 that has passed through the first transmissive portion 211 formed on the outer side of the second correction mask 220 is blocked by the second correction mask 220 and can not be transmitted. As described above, the first and second correction masks 210 and 220 can compensate for the difference in the diffusion profile between the evaporation materials 230 by controlling the amount of the evaporation material C1 to be permeated

According to various embodiments of the present invention, the second correction mask may be formed in a donut shape.

According to various embodiments of the present invention, the second transmissive portion may include a circular or hemispherical shape.

The structure of the thin film deposition apparatus 10 (shown in FIG. 1) according to still another embodiment of the present invention will be described in detail as follows.

11 is a perspective view showing another embodiment of the correction mask 300 in the structure of the thin film deposition apparatus according to various embodiments of the present invention.

As shown in FIG. 11, the correction mask 300 includes first and second correction masks 310 and 320, and the first correction mask 310 includes first, second, and third transmission portions 311 The second correction mask 320 may be disposed on the entire surface of the first correction mask 310 and may form a hemispherical transmission portion 321. [

When the second correction mask 320 is stacked on the entire surface of the first correction mask 310, the hemispherical transmission portion 321 of the second correction mask 320 is shifted to the first correction mask 310 The first and second transmissive portions 312 and 313 may be disposed on the first transmissive portion 311 and the remaining second and third transmissive portions 312 and 313 may face the remaining portion of the first correction mask 310.

For example, the first correction mask 310 may include first, second, and third regions R1, R2, and R3, wherein the first region R1 includes at least one second, At least one first transmitting portion 311 may be formed larger than the three transmitting portions 312 and 313. The second region R2 may form at least one second transmissive portion 312 formed to be smaller than the at least one first transmissive portion 311 and the third region R3 may form at least one second transmissive portion 312, Transmitting portion 313 that is smaller than the first transmitting portion 311 and is formed to be larger than the at least one second transmitting portion 312 can be formed.

11, the hemispherical transmissive portion of the second correction mask 320 is disposed above the first transmissive portion 311 of the first correction mask 310, and the remaining portion of the second correction mask 320 is blocked May be disposed on top of the second, third transmissive portions 312, 313 of the first correction mask 310.

In this state, when the deposition material E1 of the evaporation source 330 is vaporized, the deposition material E1 passes through the first transmission portion 311 of the first correction mask 310, (Shown in FIG. 1) mounted on the rotary jig 30 (shown in FIG. 1) through the hemispherical transmission portion 321 of the substrate 30 (see FIG. At this time, the clogged portion of the second correction mask 320 can not transmit the evaporation material E1.

Here, a mask rotation unit 340 for rotating the second correction mask 320 may be provided on the side of the second correction mask 320. The mask rotation unit 340 may include first and second gear units 341 and 342a and a rotation motor 342. [ The first gear portion 341 may be formed around the outer periphery of the second correction mask 320 so as to be engaged with the second gear portion 342a described later. The rotation motor 342 includes a second gear portion 342a that meshes with the first gear portion 341 and rotates the second gear portion 342a and rotates the first gear portion 341 The second correction mask 320 can be rotated.

When the second correction mask 320 is rotated by the mask rotation unit 340, the hemispherical transmission unit 321 of the second correction mask 320 rotates together with the hemispherical transmission unit 321, May be disposed on the upper surface of the second and third transmissive portions 312 and 313 of the first correction mask 310. When the evaporation material E1 of the evaporation source 330 is vaporized in this state, the evaporation material E1 passes through the second and third transmission portions 312 and 313 of the first correction mask 310, 2 (see FIG. 1) mounted on the rotary jig 30 (shown in FIG. 1) through the hemispherical transmission portion 321 of the correction mask 320 as shown in FIG.

The first and second correction masks 310 and 320 are disposed on the front surface of the evaporation source 330 in such a manner that when the evaporation material E1 of the evaporation source 330 is vaporized, After the material E1 passes through the first transmissive portion 311 of the first correction mask 310 and then passes through the hemispherical transmissive portion 321 of the second correction mask 320 to be deposited on the deposited material, The evaporation material E1 that has passed through the second and third transmissive portions 312 and 313 of the first correction mask 310 can not penetrate the clogged portion of the second correction mask 320. [ When the second and third transmitting portions 312 and 313 of the first correction mask 310 are selected, the mask rotation unit 340 is driven to rotate the second correction mask 320, The hemispherical transmissive portion 321 of the second correction mask 320 rotates the second and third transmissive portions 312 of the first correction mask 310 while rotating the hemispherical transmissive portion 321 of the second correction mask 320 according to the rotation of the first correction mask 320, Lt; RTI ID = 0.0 > 313 < / RTI > In this state, the evaporation material E1 may pass through the hemispherical transmission portion 321 after passing through the second and third transmission portions 312 and 313. At this time, even when the evaporation material E1 passes through the first transmission portion 311 of the first correction mask 310, it can not be transmitted through the clogged portion of the second correction mask 320. [

Accordingly, the first and second correction masks 300 selectively reduce the permeation of the evaporation material E1 of the evaporation source 330, thereby reducing the defective rate of the product while ensuring the uniformity of the film thickness of the evaporation material

According to various embodiments of the present invention, the second correction mask forms a hemispherical transmission portion, the second correction mask is rotated with the second correction mask, and the hemispherical transmission portion is rotated to form the first correction mask And a mask rotating unit for selectively controlling the size and the number of the at least one first transmitting portion.

The structure of the thin film deposition apparatus 10 (shown in FIG. 1) according to still another embodiment of the present invention will be described in detail as follows.

FIG. 12 is a perspective view showing still another embodiment of the correction mask 400 in the structure of the thin film deposition apparatus according to various embodiments of the present invention, and FIG. 13 is a cross- Is a plan view showing another embodiment of the mask 400

12 and 13, the correction mask 400 includes a transmissive portion 401 (including a transmissive portion 401a) 401b having different transmissive widths 401a and 401b to control the transmissive amount of the evaporation material Fl according to a difference in distance between evaporation sources, ) Can be formed.

The transmissive portion 401 may include one through hole. For example, the transmissive portion 401 is not formed in the correction mask 400 in a plurality of holes, but may be formed in one.

The first, second, and third transmission widths can be formed in the single transmissive portion 401. For example, in the portion where the deposition rate is high, the narrow first transmission width 401a is formed to reduce the permeation amount of the deposition material F1, and the low deposition rate is the permeation amount of the deposition material F1 The second transmission width 401b may be formed to be larger than the second transmission width 401b. A third transmission width 401c is formed between the portion having a high deposition rate and the portion having a low deposition rate so as to be made wider from the portion having a higher deposition rate to the portion having a lower deposition rate so as to make the deposition rate of the deposition subject uniform. . The portion having a high deposition rate and the portion having a low deposition rate may be connected to each other.

" 의 형상을 포함하여 이루어질 수 있다. 상기 투과부(401)는 상기 "

" 의 형상이외에 다른 형상도 적용될 수 있다.The transmissive portion 401 is a "

"The transmissive portion 401 may include the shape of the"

Other shapes than the shape of the "shape "

In this state, when the deposition material F1 of the evaporation source is vaporized, the deposition material F1 passes through the transmission portion 401 of the correction mask 400 and is mounted to the rotary jig 30 (shown in FIG. 1) (FIG. 1) deposited on the substrate. Since the deposition rate of the deposited material is high when the distance between the material to be deposited of the rotating jig and the correction mask 400 is high, the deposition material F1 may reduce the permeation amount of the deposition material F1 Can pass through the narrow first transmission width 401a of the transmissive portion 401. [ For example, when the distance between the material to be deposited and the transparent portion 401 is close to that of the material to be deposited, the deposition material F1 of the evaporation source is directly deposited on the material to be deposited. Accordingly, the correction mask 400 may have a narrower first transmission width 401a to reduce the deposition amount of the deposition material while reducing the transmission amount of the deposition material F1.

Here, when the distance between the material to be deposited of the rotary jig and the correction mask 400 is large, the deposition material F1 must transmit a large amount to increase the deposition rate, It can pass. For example, since the deposition rate of the deposition material F1 is low in the deposition material at a distance between the deposition target and the transmission unit 401, the transmission unit 401 can measure the amount of the deposition material F1 The second transmissive width 401b can be made wider.

Accordingly, the correction mask 400 may be arranged such that a first transmission width 401a narrowed to reduce the amount of the deposition material is disposed near the distance between the deposition material of the rotary jig and the correction mask 400, The second permeation width 401b formed to increase the permeation amount of the evaporation material at a distance between the transmissive portion 401 and the transmissive portion 401 is reduced or decreased by increasing or decreasing the deposition rate of the evaporation material F1 So that uniformity of the thickness of the deposited material can be ensured.

Here, the third transmission width 401c may be formed between the first and second transmission widths 401a and 401b, and the third transmission width 401c may be formed so as to be wider from a higher deposition rate to a lower one.

The third transmission width 401c is a ratio of the permeation amount of the evaporation material F1 passing between the first and second transmission widths 401a and 401b or between the high deposition rate portion and the low deposition rate portion Can be adjusted. Therefore, the deposition material having passed through the third transmission width 401c can be uniformly deposited on the deposition material attached between the center of the rotary jig and the outer periphery.

Therefore, the correction mask 400 forms a single transmissive portion 401 having different transmission widths, so that the evaporation material F1 of the evaporation source passes through the transmissive portion and the permeability of the evaporation material F1 So that the defect rate of the product can be lowered while ensuring the uniformity of the thickness of the deposited material.

According to various embodiments of the present invention, the correction mask may form a transmissive portion including different transmission widths to control the amount of permeation of the evaporation material depending on the difference in distance between the evaporation sources.

According to various embodiments of the present invention, the transmissive portion includes one through hole, and a portion having a high deposition rate of the material to be deposited forms a narrow first transmission width to reduce the transmission amount, And a portion having a low deposition rate is formed to have a second transmittance width that is broadly formed to increase the transmittance. In order to uniformize the deposition rate of the deposited material between the high and low portions of the deposition material, It is possible to form a third transmission width which is wider as it goes from the lower portion to the lower portion.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. Will be apparent to those of ordinary skill in the art.

Vacuum chamber: 20 rotation jig: 30
Evaporation source: 50, 410 correction mask: 60, 100, 200, 300, 400
Transmission section: 70, 401 Heating device: 21
Deposition materials: A1, A2, A3, B1, C1, D1, E1
Deposited material: 11 First deposited material: 11a
Second deposited material: 11b Third deposited material: 11c
The first area R1
Second area: R2 Third area: R3
First transmitting portion: 61 Second transmitting portion: 62
Third Transmission Portion: 63 Mask Rotation Portion: 80
Printed film: 400 Electronic device cover: 500
First, second and third transmission widths 401a, 401b and 401c

Claims (20)

In the thin film deposition apparatus,
A vacuum chamber;
A rotary jig provided in the vacuum chamber, the rotary jig mounted with the objects to be deposited and rotated by the rotary unit;
An evaporation source provided at a lower portion of the rotary jig to vaporize the evaporation material; And
And at least one correction mask disposed on the front surface of the evaporation source and adjusting the amount of permeation of the deposition material to deposit the deposition material on the deposition material.
Wherein the correction mask forms at least one transmissive portion of different sizes to control the amount of permeation of the evaporation material depending on a difference in distance between the evaporation material and the evaporation source.
The thin film deposition apparatus according to claim 1, wherein the vacuum chamber comprises a vacuum pump, a vacuum gauge, a gas introducing device, a gas analyzer, an ion generating device, and a deposition material heating device.
The method according to claim 1, wherein the evaporation source comprises any one of iridium, platinum, molybdenum, tungsten, tantalum, copper, silicon oxide, silicon nitride, silicon carbide, zirconium oxide, aluminum oxide,
Wherein the evaporation source is made of an alloy including at least two of iridium, platinum, molybdenum, tungsten, tantalum, copper, silicon oxide, silicon nitride, silicon carbide, zirconium oxide, aluminum oxide and graphite.
2. The apparatus of claim 1, wherein the vacuum chamber further comprises a heating device for heating the evaporation source,
Wherein the heating device comprises any one of resistance heating, induction heating, and electron beam heating.
The thin film deposition apparatus according to claim 1, wherein the transmissive portion comprises a through hole having a different size.
The thin film deposition apparatus according to claim 1, wherein the deposited material is contained as a printing film.
The lithographic apparatus of claim 1, wherein the correction mask comprises: a first region defining at least one first transmissive portion;
A second region forming at least one second transmissive portion formed to be smaller than the at least one first transmissive portion; And
And a third region that is smaller than the at least one first transmissive portion and forms a third transmissive portion that is larger than the at least one second transmissive portion.
The apparatus according to claim 1, wherein the material to be deposited is disposed at a center of the rotary jig and provided at a position where a distance difference from the evaporation source is largely changed.
A second deposited material disposed around the periphery of the rotary jig and provided at a position where a distance difference from the evaporation source is small; And
And a third deposited material disposed in the rotary jig and disposed between the first and second deposited material.
9. The method of claim 8, wherein the at least one first transmissive portion is formed to be larger than the size of the at least one second transmissive portion to increase the transmittance of the evaporation material, and the difference in distance between the first evaporated material and the evaporation source Form large
Wherein the at least one second transmissive portion is formed to be smaller than the size of the at least one first transmissive portion so as to lower the transmittance of the evaporation material and the difference in distance between the second evaporated material and the evaporation source is small,
Wherein the at least one third transmissive portion has a transmittance lower than that of the first transmissive portions and higher than a transmissivity ratio of the second transmissive portions and a difference in distance between the third evaporated material and the evaporation source, 1 < / RTI > transmissive portions and smaller than the distance difference of the second transmissive portions.
The apparatus of claim 1, wherein the correction mask further comprises a mask rotation unit for rotating the correction mask,
Wherein the mask rotating unit rotates the correction mask so as to realize the effect that the evaporation material can rotate while revolving with respect to the evaporation source for uniformity of deposition.
The apparatus of claim 10, wherein the mask rotation unit comprises: a first gear unit formed around an outer periphery of the correction mask; And
And a rotary motor that includes a second gear portion that meshes with the first gear portion and rotates the second gear portion and rotates the first gear portion to rotate the correction mask. Deposition apparatus.
The lithographic apparatus of claim 1, wherein the correction mask comprises: a first correction mask defining at least one first transmissive portion of different sizes; And
And a second correction mask disposed in a stack on the front surface of the first correction mask and forming at least one second transmissive portion of the same size or different size as the first transmissive portions to be opposed to the first transmissive portions, And the thin film deposition apparatus.
The thin film deposition apparatus as claimed in claim 12, wherein the second correction mask is formed in a donut shape.
The thin film deposition apparatus of claim 12, wherein the second transmissive portion comprises a circular or hemispherical shape.
13. The method of claim 12, wherein the second correction mask forms a hemispherical transmissive portion,
The second correction mask may include a mask rotating unit that rotates the second correction mask and rotates the hemispherical transmission unit to selectively adjust the size and number of the at least one first transmission unit formed in the first correction mask Wherein the thin film deposition apparatus comprises:
The thin film deposition apparatus according to claim 1, wherein the correction mask forms transmissive portions having different transmission widths in order to control a transmission amount of the evaporation material according to a difference in distance between the evaporation sources.
17. The method of claim 16, wherein the transmissive portion comprises one transmissive hole,
Wherein a portion having a high deposition rate of the material to be deposited forms a narrow first transmission width to reduce the transmission amount and a portion having a low deposition rate of the material to be deposited forms a second wide transmission width to increase the transmission amount,
Wherein a third transmissive width is formed between the high and low portions of the deposition material so as to increase the deposition rate of the deposited material from the high deposition rate to the low deposition rate, .
In the thin film deposition method,
The process of mounting the evaporation material on the rotary jig provided in the vacuum chamber
Heating the evaporation source provided at the lower portion of the rotary jig to vaporize the evaporation material in the evaporation source in the vacuum chamber;
Wherein the correction mask which transmits the evaporation material to the correction mask disposed on the front surface of the evaporation source and the correction mask which forms the at least one transmissive portion of the different size has a transmission amount of the evaporation material according to a difference in distance between the evaporation material and the evaporation source And depositing the controlled deposition material on the deposition material.
19. The method of claim 18, wherein the deposition mask comprises a first region in which at least one first transmissive portion is formed in the correction mask during the deposition of the deposition material, wherein the at least one first transmissive portion Permeable,
And a second region formed in the correction mask with at least one second transmissive portion formed to be smaller than the at least one first transmissive portion, wherein the at least one second transmissive portion transmits the evaporation material,
Wherein the correction mask includes a third region smaller than the at least one first transmissive portion and forming a third transmissive portion larger than the at least one second transmissive portion, the third transmissive portion transmitting the deposition material Lt; / RTI >
19. The method of claim 18, wherein the at least one first transmissive portion is formed to have a size larger than the size of the at least one second transmissive portion to increase the transmittance of the evaporation material, A difference in distance between the material to be deposited and the evaporation source is greatly increased
Wherein the at least one second transmissive portion is formed to be smaller than the size of the first at least one first transmissive portion so as to lower the transmittance of the evaporation material and the difference in distance between the evaporated material and the evaporation source is small,
Wherein the at least one third transmissive portion has a transmittance lower than that of the first transmissive portion and higher than a transmittance ratio of the second transmissive portion so that a difference in distance between the object to be deposited and the evaporation source is reduced, Wherein the distance between the first transmission portion and the second transmission portion is smaller than the difference between the first transmission portion and the second transmission portion.

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