KR20180025018A - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

The present invention provides an organic light emitting display device which reduces a bezel and prevents a defect, and a manufacturing method thereof. The organic light emitting display device comprises: a first substrate having a display region and a non-display region; a second substrate arranged to face the first substrate; a dam arranged between the second substrate and the non-display region of the first substrate; and a first sacrificial layer arranged between the first substrate and the dam. The dam and the end of the first substrate are overlapped.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting diode (OLED) display device,

The present invention relates to an organic light emitting display and a method of manufacturing the same.

In recent years, the importance of display devices has been increasing with the development of multimedia. In response to this, flat panel display devices such as liquid crystal display devices, plasma display devices, and organic light emitting display devices have been commercialized. Among such flat panel display devices, liquid crystal display devices and organic light emitting display devices are widely used in a variety of fields such as a notebook computer, a television, a tablet computer, a monitor, a smart phone, a portable display device, a portable information device, and the like due to their excellent characteristics such as thinness, light weight, And is widely used as a display device of a display device.

The OLED display has a structure in which a light emitting layer is provided between a cathode for injecting electrons and an anode for injecting holes, and electrons generated from the cathode and holes generated from the anode When the injected electrons and holes are injected into the light emitting layer, an exciton is generated by the excited electrons and holes, and the generated excitons are emitted from the excited state to the ground state, to be.

The organic light emitting display includes a first substrate and a second substrate bonded together. The first substrate and the second substrate are bonded together by a side sealing process using a sealant. At this time, in the course of attaching the first substrate and the second substrate, the sealant may be pressed and the sealant may spread out from the first and second substrates. If the sealant spreads to the outside of the organic light emitting diode display, the organic light emitting display may be defective and the reliability may be reduced. Therefore, in order to prevent the sealant from spreading to the outside of the organic light emitting display device, the conventional organic light emitting display device disposes the sealant inside the first and second substrates while leaving a margin. However, when a margin is left inside the first and second substrates, a bezel, which is a non-display region of the organic light emitting display, is increased. In addition, when the first substrate is pressed by an external impact, the first substrate may be bent while causing damage to the second substrate, which may cause defects.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an organic light emitting display device and a method of manufacturing the same that can reduce a bezel and prevent defects.

According to an aspect of the present invention, there is provided a display device including a first substrate having a display region and a non-display region, a second substrate disposed to face the first substrate, a non-display region of the first substrate, And a first sacrificial layer disposed between the first substrate and the dam, wherein the end of the first substrate and the dam overlap with each other, and a method of manufacturing the same.

According to the present invention, in the organic light emitting diode display according to an exemplary embodiment, since the dam is disposed at the outermost portion of the first and second substrates without a margin, a narrow bezel can be implemented, There is an effect that the actual screen is widened in the product.

In addition, in the organic light emitting diode display according to an exemplary embodiment of the present invention, since the dam is disposed at the outermost portion of the first and second substrates, the first and second substrates can be prevented from being bent by pressing the outer frame portion.

In addition, the organic light emitting diode display according to an exemplary embodiment of the present invention can prevent the occurrence of scratch defects on the first and second substrates, thereby improving reliability.

In addition, the organic light emitting display device according to an exemplary embodiment of the present invention can prevent the material constituting the dam from contaminating the substrate or the equipment used in the scribing process by disposing the sacrificial layer between the substrate and the dam.

The effects obtained in the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description .

1 is a perspective view illustrating an organic light emitting display according to an exemplary embodiment of the present invention.
2 is a plan view showing a display region and a non-display region, a gate driver, a source drive IC, a flexible film, a circuit board, and a timing control portion of the first substrate of FIG.
3 is a cross-sectional view of an OLED display according to an exemplary embodiment of the present invention.
4 is a cross-sectional view of an OLED display according to another example of the present invention.
5A to 5E are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an exemplary embodiment of the present invention.

The meaning of the terms described herein should be understood as follows.

The word " first, "" second," and the like, used to distinguish one element from another, are to be understood to include plural representations unless the context clearly dictates otherwise. The scope of the right should not be limited by these terms. It should be understood that the terms "comprises" or "having" does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof. It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, Means any combination of items that can be presented from more than one. The term "on" means not only when a configuration is formed directly on top of another configuration, but also when a third configuration is interposed between these configurations.

Hereinafter, preferred embodiments of the organic light emitting diode display and the method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals are used to denote like elements throughout the drawings, even if they are shown on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

FIG. 1 is a perspective view illustrating an organic light emitting display according to an exemplary embodiment of the present invention. FIG. 2 is a cross-sectional view illustrating a display region and a non-display region, a gate driver, a source drive IC, a flexible film, And a timing control unit. 1 and 2, the X axis represents a direction parallel to the gate lines, the Y axis represents a direction parallel to the data lines, and the Z axis represents the height direction of the organic light emitting display device.

1 and 2, an organic light emitting diode display according to an exemplary embodiment of the present invention includes a display panel 100, a gate driver 200, a source driver integrated circuit (IC) 310 A flexible film 330, a circuit board 350, and a timing control unit 400. [

The display panel 100 includes a first substrate 110 and a second substrate 120. Gate lines, data lines and pixels are formed on one surface of the first substrate 110 facing the second substrate 120. The pixels include a plurality of sub-pixels, and a plurality of sub-pixels are formed in the intersecting regions of the gate lines and the data lines.

Each of the plurality of sub-pixels may include at least one thin film transistor and an organic light emitting element. Each of the plurality of sub-pixels is supplied with the data voltage through the data line when at least one thin film transistor is turned on by the gate signal of the gate line. Each of the plurality of sub-pixels controls the current flowing to the organic light emitting element according to the data voltage to emit the organic light emitting element at a predetermined brightness.

The display panel 100 may be divided into a display area DA for displaying an image and a non-display area NDA for not displaying an image, as shown in Fig. Gate lines, data lines, and pixels may be formed in the display area DA. The gate driver 200 and the pads may be formed in the non-display area NDA.

The gate driver 200 supplies gate signals to the gate lines according to a gate control signal input from the timing controller 400. The gate driver 200 may be formed in a non-display area NDA on one side or both sides of the display area DA of the display panel 100 in a gate driver in panel (GIP) manner. Alternatively, the gate driver 200 may be formed of a driving chip, mounted on a flexible film, and mounted on a non-display area NDA on one side or both sides of the display area DA of the display panel 100 by TAB (tape automated bonding) As shown in FIG.

The source driver IC 310 receives the digital video data and the source control signal from the timing controller 400. The source driver IC 310 converts the digital video data into analog data voltages according to the source control signal and supplies the analog data voltages to the data lines. When the source drive IC 310 is manufactured as a driving chip, the source drive IC 310 may be mounted on the flexible film 330 using a chip on film (COF) method or a chip on plastic (COP) method.

Pads such as data pads may be formed in the non-display area NDA of the display panel 100. [ Wires connecting the pads to the source drive IC 310 and wirings connecting the pads and the wirings of the circuit board 350 may be formed on the flexible film 330. The flexible film 330 is attached to the pads using an anisotropic conducting film, whereby the pads and the wirings of the flexible film 330 can be connected.

remind The circuit board 350 may be attached to the flexible films 330. The circuit board 350 may be implemented with a plurality of circuits implemented with driving chips. For example, the timing controller 400 may be mounted on the circuit board 350. The circuit board 350 may be a printed circuit board or a flexible printed circuit board.

remind The timing controller 400 receives digital video data and a timing signal from an external system board through a cable of the circuit board 350. The timing controller 400 generates a gate control signal for controlling the operation timing of the gate driver 200 and a source control signal for controlling the source driver ICs 310 based on the timing signal. The timing controller 400 supplies a gate control signal to the gate driver 200 and a source control signal to the source driver ICs 310. [

3 is a cross-sectional view of an OLED display according to an exemplary embodiment of the present invention. This is a view schematically showing a cross section of I-I shown in Fig.

Referring to FIG. 3, an organic light emitting display according to an embodiment of the present invention includes a display area DA and a non-display area NDA.

The display area DA is composed of a plurality of pixels (not shown) formed in each of the pixel regions intersecting with a plurality of gate lines (not shown) and a plurality of data lines (not shown). The display area DA may include a thin film transistor T, a passivation layer PAS, a planarization layer PAC, an organic light emitting element OLED, a bank BNK, a sealing layer INC , A filler layer (FL), a color filter (CF), a light shielding layer (BM), and a second substrate (120).

Although glass is mainly used for the first substrate 110, transparent plastic such as polyimide which can be bent or rolled can be used. When polyimide is used as the material of the first substrate 110, polyimide excellent in heat resistance that can withstand high temperatures can be used, considering that a high-temperature deposition process is performed on the first substrate 110 .

A buffer layer (not shown) may be additionally provided on the first substrate 110. The buffer layer may be provided on the entire upper surface of the first substrate 110. The buffer layer functions to prevent water from penetrating into the display panel 100 from the first substrate 110, which is vulnerable to moisture permeation. The buffer layer also functions to prevent impurities such as metal ions from being diffused from the first substrate 110 to penetrate the active layer ACT of the thin film transistor T. [ The buffer layer may be formed of an inorganic insulating material, for example, silicon dioxide (SiNx), silicon nitride (SiNx), silicon oxynitride (SiON), or a multilayer thereof.

The thin film transistor T is disposed on the first substrate 110. The thin film transistor T according to an example includes an active layer ACT, a gate insulating film GI, a gate electrode GE, a source electrode SE and a drain electrode DE.

The active layer ACT is provided on the first substrate 110 disposed in the display area DA. The active layer ACT is disposed so as to overlap with the gate electrode GE. The active layer ACT has a first end region A1 located on the side of the source electrode SE and a second end region A2 located on the side of the drain electrode DE and a second end region A2 located between the first end region A1 and the second end region A2. And a region A3. The central region A3 is made of a semiconductor material not doped with a dopant, and the one-end region A1 and the other-end region A2 may be made of a semiconductor material doped with a dopant.

The gate insulating film GI is provided on the active layer ACT. The gate insulating film GI functions to insulate the active layer ACT from the gate electrode GE. The gate insulating film GI covers the active layer ACT and may be formed on the entire surface of the display area DA. The gate insulating film GI may be formed of an inorganic insulating material, for example, silicon dioxide (SiNx), silicon nitride (SiNx), silicon oxynitride (SiON), or a multilayer thereof.

remind The gate electrode GE is provided on the gate insulating film GI. The gate electrode GE overlaps the central region A3 of the active layer ACT with the gate insulating film GI therebetween. The gate electrode GE may be formed of a metal such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) But is not limited to, a single layer or a multi-layer made of any one or an alloy thereof.

An interlayer insulating film (not shown) may be additionally provided on the gate electrode GE. The interlayer insulating film may be provided on the entire surface of the display area DA including the gate electrode GE. The interlayer insulating film may be formed of the same inorganic insulating material as the gate insulating film GI, for example, silicon dioxide (SiNx), silicon nitride (SiNx), silicon oxynitride (SiON), or a multilayer thereof.

The protective layer PAS is provided on the gate electrode GE. The protective layer (PAS) functions to protect the thin film transistor (T). The passivation layer (PAS) may be formed of an inorganic insulating material such as silicon dioxide (SiNx), silicon nitride (SiNx), silicon oxynitride (SiON), or a multilayer thereof.

The source electrode SE and the drain electrode DE are provided on the protective layer PAS so as to be spaced apart from each other. The protective layer PAS is provided with a first contact hole CNT1 for exposing a part of the one end area A1 of the active layer ACT and a second contact hole CNT2 for exposing a part of the other end area A2 of the active layer ACT. . The source electrode SE is connected to the first end region A1 of the active layer ACT via the first contact hole CNT1 and the drain electrode DE is connected to the active layer ACT through the second contact hole CNT2. And the other end area A2.

The structure of the thin film transistor T is not limited to the example described above, and can be variously modified to a known structure that can be easily practiced by those skilled in the art.

The planarization layer (PAC) is provided on the protective layer (PAS). The planarizing layer (PAC) functions to flatten the top of the protective layer (PAS). The planarization layer (PAC) may be formed of an organic insulating material such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, ), But the present invention is not limited thereto.

The organic light emitting device OLED is provided on the thin film transistor T. The organic light emitting device OLED includes a first electrode (AND), an organic light emitting layer (EL), and a second electrode (CAT).

remind The first electrode (AND) is provided on the planarization layer (PAC). The first electrode AND is connected to the drain electrode DE of the thin film transistor T through the third contact hole CNT3 provided in the planarization layer PAC. The first electrode (AND) according to an exemplary embodiment is formed of a transparent conductive material such as ITO, IZO, ZnO, or In2O3 having a large work function value, and thus can serve as an anode.

The organic light emitting layer (EL) is provided on the first electrode (AND). The organic light emitting layer EL is provided in the individual pixel region defined by the bank BNK. The organic light emitting layer EL according to an exemplary embodiment may include a hole transporting layer, an organic light emitting layer, and an electron transporting layer. Furthermore, the organic light emitting layer (EL) may further include at least one functional layer for improving the luminous efficiency and / or lifetime of the light emitting layer.

The second electrode (CAT) is provided on the organic light emitting layer (EL). The second electrode CAT may be formed in an electrode shape that is common to all pixels without being divided into pixel regions. That is, the second electrode CAT may be provided not only on the organic light emitting layer EL but also on the bank BNK. When the voltage is applied to the second electrode (CAT) together with the first electrode (AND), holes and electrons move to the light emitting layer through the hole transporting layer and the electron transporting layer, respectively. The second electrode CAT may function as a cathode of the organic light emitting display device and may be formed of an opaque metal material composed of Li, Ca, LiF / Ca, LiF / Al, Al, Mg, have.

The bank BNK is provided on the planarization layer PAC. The banks BNK are provided between adjacent first electrodes (AND), and partition the first electrodes (AND). The banks BNK can electrically isolate the first electrodes (AND) adjacent to each other. The bank BNK may be formed of an organic insulating material such as a polyimide resin, an acryl resin, a benzocyclobutene (BCB), or the like, but is not limited thereto.

The encapsulation layer INC is disposed entirely on the second electrode CAT. The encapsulation layer (INC) prevents penetration of water or the like that may flow from the outside, thereby preventing deterioration of the organic light emitting layer (EL). The sealing layer (INC) may be made of a metal such as copper (Cu) and aluminum (Al) or an alloy thereof, but not necessarily, various materials known in the art can be used.

The filling layer FL is filled in the space between the first substrate 110 and the second substrate 120 and the filling layer FL is not spread out of the organic light emitting display device by the dam DAM. The filling layer FL is disposed between the first substrate 110 and the second substrate 120 to prevent light loss and increase the adhesion between the first substrate 110 and the second substrate 120. [

The color filter CF is disposed between the sealing layer INC and the second substrate 120. The color filter CF is disposed on the organic light emitting layer EL to change the color of white light emitted from the organic light emitting layer EL. At this time, the color filter CF may be composed of a red color filter, a green color filter, and a blue color filter.

The light blocking layer BM is disposed between the sealing layer INC and the second substrate 120. The light shielding layer BM is disposed on the side of the color filter CF so as not to overlap with the organic light emitting layer EL to prevent light from leaking into the non-display area NDA.

The non-display area NDA is provided outside the display area DA, and a driving part for applying a signal to the display area DA is disposed. The non-display area NDA includes first and second substrates 110 and 120, a protective layer PAS, a dam DAM, a sacrificial layer SL, and a side sealing member (not shown). At this time, the first and second substrates 110 and 120 and the passivation layer PAS extend from the display area DA. The planarizing layer PAC, the first electrode AND, the second electrode CAT, the sealing layer INC, the filling layer FL and the light shielding layer BM extend in the display area DA, May be provided up to the display area NDA, but may not necessarily be arranged in the display area DA. Therefore, only the dam (DAM), the sacrificial layer (SL), and the side sealing member (not shown) will be described in the following description, and redundant description of the same constitution will be omitted.

The dam (DAM) is disposed between the first substrate 110 and the second substrate 120. The dam DAM may have a frame shape surrounding the display area DA and the dam DAM may prevent the filling layer FL from spreading out of the OLED display. The dam (DAM) attaches the first substrate 110 and the second substrate 120 together. The DAM may be a sealant, and the first substrate 110 and the second substrate 120 may be bonded together by a side sealing process using a sealant. have. In order to prevent the sealant from spreading to the outside of the first and second substrates 110 and 120 during the process of attaching the first and second substrates 110 and 120, And the second substrate (110, 120). That is, in the conventional organic light emitting diode display, a bezel region other than the region where the dam (DAM) is disposed in the non-display region NDA is provided for the margin. However, the organic light emitting display according to an exemplary embodiment of the present invention is not provided with a bezel region provided for margin in the non-display region NDA. That is, the dam (DAM) of the organic light emitting display according to an exemplary embodiment of the present invention is disposed at the outermost portion of the first substrate 110 and the second substrate 120. A dam (DAM) of an organic light emitting diode display according to an exemplary embodiment of the present invention includes a first substrate 110 and a second substrate 120, a first substrate 110 and a second substrate 120, That is, it does not deviate from the side. That is, the end of the dam (DAM) of the organic light emitting display according to an exemplary embodiment of the present invention coincides with the end of the first and second substrates 110 and 120. Accordingly, since the non-display area NDA of the OLED display according to the exemplary embodiment of the present invention is reduced compared to the OLED display of the related art, a narrow bezel can be realized, There is an effect that the actual screen is widened in the size product. In addition, since the dam (DAM) is disposed at the outermost portion of the first and second substrates 110 and 120 in the organic light emitting display device according to an exemplary embodiment of the present invention, the first and second substrates 110, and 120 can be prevented from being bent. Accordingly, the organic light emitting diode display according to an exemplary embodiment of the present invention can prevent scratches from occurring on the first and second substrates 110 and 120, thereby improving reliability.

The sacrificial layer SL is disposed at the outermost portion of the organic light emitting display device and the sacrificial layer SL is provided between the first and second substrates 110 and 120 and the dam DAM. The sacrificial layer (SL) may have a frame shape together with a dam (DAM). The sacrificial layer (SL) may be formed into a liquid using a polymer, or an adhesive tape may be used. The sacrificial layer SL may be made of an organic material, and may be made of, for example, silicon oxide such as amorphous silicon or silicon nitride. When the sacrificial layer SL is made of an organic material, the sacrificial layer SL has a width smaller than the width of the dam DAM because moisture can penetrate into the organic light emitting display from the outside. The sacrificial layer SL is provided so as to overlap with the outer end of the dam DAM and is not provided in the display area DA but is disposed at the outermost portion of the first and second substrates 110 and 120. The sacrificial layer SL loses the adhesive force due to ultraviolet curing or laser irradiation and thus the sacrificial layer SL is formed in the process of removing the bezel regions of the first and second substrates 110 and 120 So that the materials constituting the first and second substrates 110 and 120 and the dam (DAM) can be easily separated. In addition, the sacrificial layer SL can prevent the first and second substrates 110 and 120 and the equipment for removing the bezel area from being contaminated by the material constituting the dam (DAM).

The OLED display according to an exemplary embodiment of the present invention includes a first sacrificial layer SL1 and a second sacrificial layer SL2.

The first sacrificial layer (SL1) is disposed on the first substrate (110). One side of the first sacrificial layer SL1 is in contact with the first substrate 110, and the other side is in contact with the dam DAM. One end of the first sacrificial layer SL1 facing the outside of the organic light emitting display is aligned with the end of the first substrate 110. [ In addition, one end of the first sacrificial layer SL1 coincides with the end of the dam DAM facing the outside of the organic light emitting display device. The first sacrificial layer SL1 is disposed such that the other end of the first sacrificial layer SL1 facing the inside of the organic light emitting display device can contact the dam DAM and does not leave the dam DAM.

The second sacrificial layer (SL2) is disposed on the second substrate (120). One side of the second sacrificial layer SL2 is in contact with the second substrate 120, and the other side is in contact with the dam DAM. The second sacrificial layer SL2 has one end facing the outside of the organic light emitting display device aligned with the end of the second substrate 120. [ One end of the second sacrificial layer SL2 coincides with the end of the dam DAM facing the outside of the organic light emitting display device. The second sacrificial layer SL2 is disposed such that the other end of the second sacrificial layer SL2 facing the inside of the organic light emitting display device can contact the dam DAM and does not leave the dam DAM.

The side sealing members (not shown) are disposed on the sides of the first substrate 110 and the second substrate 120. The side sealing members are disposed to cover the side surfaces of the first and second substrates 110 and 120 for side shielding with the light sources of the first and second substrates 110 and 120. The side sealing member may be composed of a thermosetting or photocurable resin.

In the organic light emitting diode display according to an embodiment of the present invention, since a dam (DAM) is disposed without margin at the outermost portions of the first and second substrates 110 and 120, a narrow bezel It is possible to enhance the aesthetics and the effect of widening the actual screen size of products of similar size. In addition, since the dam (DAM) is disposed at the outermost portion of the first and second substrates 110 and 120 in the organic light emitting display device according to an exemplary embodiment of the present invention, the first and second substrates 110, and 120 can be prevented from being bent. Accordingly, the organic light emitting diode display according to an exemplary embodiment of the present invention can prevent scratches from occurring on the first and second substrates 110 and 120, thereby improving reliability.

4 is a cross-sectional view of an OLED display according to another example of the present invention. This is a view schematically showing a section of II-II shown in Fig. This is a modification of the configuration of the first substrate 110, the dam (DAM), and the first sacrificial layer (SL1) in the organic light emitting display according to the example shown in Fig. Accordingly, only the first substrate 110, the dam (DAM), and the first sacrificial layer SL1 will be described in the following description, and redundant description of the same constitution will be omitted.

Referring to FIG. 4, the first substrate 110 of the OLED display according to another exemplary embodiment of the present invention is larger than the second substrate 120. Therefore, in the organic light emitting display according to another example of the present invention, the end of the first substrate 110 protrudes from the end of the second substrate 120. A plurality of pads (not shown) are provided on the protruding first substrate 110, and a flexible film 330 on which the source drive integrated circuit 310 is mounted is attached.

The dam (DAM) is disposed between the first substrate 110 and the second substrate 120. The dam (DAM) of the organic light emitting diode display according to another exemplary embodiment of the present invention has an end corresponding to an end of the second substrate 120 and does not coincide with an end of the first substrate 110. The first sacrificial layer SL1 between the first substrate 110 and the dam (DAM) is not provided because the first substrate 110 according to another example of the present invention is not cut by the scribing process.

Although not shown, side sealing members (not shown) are disposed on the sides of the first substrate 110 and the second substrate 120 of the OLED display according to another exemplary embodiment of the present invention. The side sealing members are disposed to cover the side surfaces of the first and second substrates 110 and 120 for side shielding with the light sources of the first and second substrates 110 and 120. The side sealing member may be composed of a thermosetting or photocurable resin.

FIGS. 5A to 5E are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention. Referring to FIG. Therefore, the same reference numerals are assigned to the same components, and repetitive descriptions of the repetitive portions in the materials, structures, etc. of the respective components are omitted.

Hereinafter, a method of manufacturing an OLED display according to an exemplary embodiment of the present invention will be described.

5A, a thin film transistor T is formed on a display region DA on a first substrate 110 and a protective layer PAS and a planarization layer PAC are formed on the thin film transistor T, , An organic light emitting element layer (OLED), a bank (BNK), and an encapsulation layer (INC). A first sacrificial layer SL1 is formed in a frame shape in a non-display area NDA on the first substrate 110. [

The process of forming the thin film transistor T includes forming the active layer ACT and the gate insulating film GI on the first substrate 110 and forming the gate electrode GE and the protective layer PAS on the gate insulating film GI, The first and second contact holes CNT1 and CNT2 are formed in the passivation layer PAS so that the source and drain electrodes SE and DE are formed on the passivation layer PAS with the first and second contacts, And forming the second electrode layer to be connected to the active layer ACT through the holes CNT1 and CNT2. The thin film transistor T may be formed by various methods known in the art.

Then, a color filter CF and a light-shielding layer BM are formed in the display area DA on the second substrate 120. Then, The second sacrificial layer SL2 is formed in the frame shape in the non-display area NDA on the second substrate 120 and the dam DAM is formed so as to surround the display area DA, Fill the filling layer (FL).

Then, the first substrate 110 and the second substrate 120 are attached to each other, and ultraviolet (UV) or laser is applied to the first sacrificial layer SL1 and the second sacrificial layer SL2, 1 and the second sacrificial layer (SL1, SL2). The first and second sacrificial layers SL1 and SL2 irradiated with the laser are separated from the interface between the first and second substrates 110 and 120 due to the loss of adhesion. Here, an excimer laser may be used as an example of the laser. Further, although not shown in the drawings, an inorganic film such as silicon oxide or silicon nitride and amorphous silicon may be provided between the first and second substrates 110 and 120. [ The first and second sacrificial layers SL1 and SL2 are formed on the first and second substrates 110 and 120 and the first and second sacrificial layers SL1 and SL2 when the inorganic film is separated from the first and second substrates 110 and 120 through a laser release. ) Can be completely removed. As another example, when the laser is irradiated to the first and second sacrificial layers SL1 and SL2, hydrogen distributed in the first sacrificial layer SL1 and the second sacrificial layer SL2 burst, 110, and 120, respectively. The method of separating the first and second substrates 110 and 120 from the first and second sacrificial layers SL1 and SL2 is not limited to the example described above, Various configurations can be adopted.

Then, as shown in FIG. 5B, the non-display area NDA of the second substrate 120 is cut and removed by a scribing process. The scribing process is based on the intermediate point of the second sacrificial layer SL2 for the margin. The second sacrificial layer SL2 is separated from the dam DAM by cutting the second substrate 120 with respect to the intermediate point of the second sacrificial layer SL2, ). The second sacrificial layer SL2 allows the materials constituting the second substrate 120 and the dam (DAM) to be easily separated in the process of removing the non-display area NDA of the second substrate 120. [ Accordingly, in the organic light emitting display according to an exemplary embodiment of the present invention, the second sacrificial layer SL2 is disposed between the second substrate 120 and the dam (DAM) It is possible to prevent contamination of equipment used in the scribing process or the scribing process.

Then, as shown in FIG. 5C, the non-display area NDA of the first substrate 110 is cut and removed by a scribing process. The scribing process is based on the intermediate point of the first sacrificial layer SL1 for the margin. The first sacrificial layer SL1 is separated from the dam DAM by cutting the first substrate 110 with respect to the intermediate point of the first sacrificial layer SL1, ). The first sacrificial layer SL1 allows the materials constituting the dam and the first substrate 110 to be easily separated in the process of removing the non-display area NDA of the first substrate 110. [ Accordingly, in the organic light emitting diode display according to an exemplary embodiment of the present invention, the first sacrificial layer SL1 is disposed between the first substrate 110 and the dam (DAM) It is possible to prevent contamination of the equipment used in the scribing process.

Then, as shown in FIG. 5D, a dam (DAM) protruding outside the organic light emitting display device is cut by a grinding process with reference to the ends of the first substrate 110 and the second substrate 120 Remove.

Then, as shown in Fig. 5E, the projected dam DAM is cleaned by the grinding process. The cleaning process can be performed simultaneously with the grinding process. As described above, the OLED display according to the exemplary embodiment of the present invention uses the conventional OLED display, thereby reducing the non-display area (NDA) of the OLED display without adding a new process. The method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention includes a first and a second substrates 110 and 120 and a non-display area NDA in which a dam (DAM) is not formed, It is possible to prevent defects due to contamination, prevent scratch defects due to pressing of the outer frame, and improve reliability.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

110: first substrate 120: second substrate
T: thin film transistor PAS: protective layer
PAC: planarization layer OLED: organic light emitting device layer
BNK: bank INC: encapsulation layer
FL: filling layer CF: color filter
BM: Shading layer DAM: Dam
SL: sacrificial layer

Claims (13)

A first substrate having a display region and a non-display region;
A second substrate disposed to face the first substrate;
A dam disposed between the non-display region of the first substrate and the second substrate; And
And a second sacrificial layer disposed between the second substrate and the dam,
Wherein the side of the second substrate and the dam overlap each other. The method according to claim 1,
Wherein the dam does not deviate from a side surface of the second substrate. The method according to claim 1,
Wherein the dam is disposed at an outermost portion of the first substrate and the second substrate. The method according to claim 1,
And an end of the dam coincides with an end of the second substrate. The method according to claim 1,
And the width of the second sacrificial layer is smaller than the width of the dam. 6. The method of claim 5,
And the second sacrificial layer is disposed at an outermost portion of the first substrate and the second substrate. The method according to claim 6,
Further comprising a first sacrificial layer disposed between the first substrate and the dam, wherein a width of the first sacrificial layer is smaller than a width of the dam. 8. The method of claim 7,
Wherein the first sacrificial layer is disposed at an outermost portion of the first substrate and the second substrate. 9. The method of claim 8,
And a side sealing member surrounding the side surfaces of the first substrate and the second substrate. The method according to claim 6,
And an edge of the first substrate protrudes from an end of the second substrate, and further includes a side sealing member surrounding the sides of the first substrate and the second substrate. The method according to claim 1,
Wherein the second sacrificial layer has a frame shape. Forming a thin film transistor in the display region of the first substrate having a display region and a non-display region;
Forming an organic light emitting device layer to be electrically connected to the thin film transistor;
Forming a color filter in a display area of a second substrate having a display area and a non-display area so as to overlap with the first substrate;
Forming a second sacrificial layer in a non-display area of the second substrate;
Forming a dam on the second sacrificial layer so as to surround the display area;
Forming a first sacrificial layer on the dam opposite the second sacrificial layer;
Attaching the first substrate and the second substrate such that the first sacrificial layer is formed in a non-display area of the first substrate; And
And forming the dam such that an end of the first substrate overlaps with the dam, and the dam does not extend beyond an end of the first substrate. 13. The method of claim 12,
Wherein the step of forming the dam such that the end of the first substrate and the dam are overlapped and the dam is not separated from the end of the first substrate,
Irradiating ultraviolet rays or a laser to the first sacrificial layer and the second sacrificial layer;
Cutting and removing the second substrate through a scribing process based on an intermediate point of the second sacrificial layer;
Cutting and removing the first substrate through a scribing process based on an intermediate point of the first sacrificial layer; And
And grinding and removing the dam protruding from an end of the first substrate and the second substrate.

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