KR20180023365A - power module - Google Patents

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Publication number
KR20180023365A
KR20180023365A KR1020160108545A KR20160108545A KR20180023365A KR 20180023365 A KR20180023365 A KR 20180023365A KR 1020160108545 A KR1020160108545 A KR 1020160108545A KR 20160108545 A KR20160108545 A KR 20160108545A KR 20180023365 A KR20180023365 A KR 20180023365A
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South Korea
Prior art keywords
terminal
metal member
power
power semiconductor
power module
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KR1020160108545A
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Korean (ko)
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KR101897639B1 (en
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이주환
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현대오트론 주식회사
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Publication of KR20180023365A publication Critical patent/KR20180023365A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

According to an aspect of the present invention, there is provided a semiconductor device comprising: a first metal member including a first terminal electrically connected to a power source; One or more first power semiconductors mounted on one side of the first metal member; A second metal member disposed on the first power semiconductor and including a second terminal electrically connected to the load; One or more second power semiconductors mounted on a surface of the second metal member opposite to a surface corresponding to the first power semiconductor; And a third metal member disposed on an upper surface of the second power semiconductor and including a third terminal electrically connected to the power source, wherein the first terminal, the second terminal, A second metal member, and a third metal member, each of which corresponds to a portion integral with the first metal member, the second metal member, and the third metal member, respectively.

Description

A power module {power module}

The present invention relates to a power module manufactured by packaging a power semiconductor mounted on a metal plate, and more particularly, to a power module that can effectively solve a thermal problem generated when a plurality of power semiconductors are packaged Is about the power module.

Generally, a power module is controlled by a pulse width modulation (PMW) signal as a switching element for supplying current to an external load driven from a power source to a high power. As the amount of power required for the power system is increased, the amount of heat generated by the power module is increased, and the heat radiation characteristic becomes important. In order to improve the heat dissipation characteristics, heat sinks, heat dissipation pads, and the like have appeared, which increases the size of the power module. Korean Patent Laid-Open Publication No. 2016-0050282 discloses a structure of a power module using a substrate and a spacer for connecting a pair of power semiconductors. However, the power module has a complicated structure and a special bonding process is used to bond various terminals to the copper material used for the power module, thereby increasing the manufacturing cost of the power module.

It is an object of the present invention to provide a power module having a heat dissipation structure that can solve a problem of heat generation occurring when a plurality of power semiconductors are packaged and fabricated more simply and effectively. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a semiconductor device comprising: a first metal member including a first terminal electrically connected to a power source; One or more first power semiconductors mounted on one side of the first metal member; A second metal member disposed on the first power semiconductor and including a second terminal electrically connected to the load; One or more second power semiconductors mounted on a surface of the second metal member opposite to a surface corresponding to the first power semiconductor; And a third metal member disposed on an upper surface of the second power semiconductor and including a third terminal electrically connected to the power source, wherein at least one of the first terminal, the second terminal, and the third terminal Are each a part integral with the first metal member, the second metal member and the third metal member, respectively.

The first terminal and the third terminal may extend in a first direction, and the second terminal may extend in a second direction different from the first direction.

The first terminal and the third terminal may have different heights and may be staggered.

At least one of the first terminal and the third terminal may be bent at a predetermined angle with respect to a direction perpendicular to the first direction, and may extend in a first direction.

Wherein at least one first diode is mounted on a surface of the first metal member on which the first power semiconductor is mounted and one or more second diodes are mounted on a surface of the second metal member on which the second power semiconductor is mounted .

The first signal terminal connected to the first power semiconductor and the second signal terminal connected to the second power semiconductor may be disposed in opposite directions to each other, 1 terminal and the third terminal.

A spacer that can electrically connect the first power semiconductor and the second metal member may be disposed between the first power semiconductor and the second metal member.

The second metal member may also be in the form of a hollow plate, for example comprising a passage through which fluid may pass.

Wherein the first terminal is electrically coupled to a collector of the first power semiconductor and the third terminal is electrically coupled to an emitter of the second power semiconductor, The emitter of the first power semiconductor and the collector of the second power semiconductor.

Further, a fourth metal member is disposed on the opposite surface of the first metal member, on which the first power semiconductor is mounted, with a first electrical insulator interposed therebetween, and the fourth metal member is arranged to correspond to the second power semiconductor of the third metal member And a fifth metal member may be disposed on the opposite side of the second electrical insulator.

At least one of the first electric insulator and the second electric insulator may include Al 2 O 3 or AlN.

According to the embodiment of the present invention, a part of the metal member on which the power semiconductor is mounted is used as a power source terminal, so that the metal member can simultaneously function as the heat radiation pad and the power source terminal. Therefore, the floating inductance can be reduced while having a smaller size than the conventional one, and the power module capable of improving the switching efficiency can be economically manufactured. Of course, the scope of the present invention is not limited by these effects.

1 is a plan view of a power module according to a first embodiment of the present invention.
2 is an exploded view of the power module of FIG.
3 is a cross-sectional view of a portion cut along the line A-A 'in FIG.
4 shows a heat dissipation region of a power module according to the first embodiment of the present invention.
5 is a cross-sectional view of a power module according to a second embodiment of the present invention.
6 is a diagram illustrating a case where power modules according to an embodiment of the present invention are connected in parallel.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, in the figures the elements are turned over so that the elements depicted as being on the top surface of the other elements are oriented on the bottom surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

FIG. 1 is a plan view of a power module according to a first embodiment of the present invention, and FIG. 2 is an exploded view of the power module of FIG. 1, which is divided into components. 3 is a cross-sectional view taken along the line A-A 'in FIG.

1 to 3, a power module 100 according to an embodiment of the present invention includes a first metal member 102 including a first terminal 102a electrically connected to a power source (not shown) A first power semiconductor 108 mounted on one side of the first metallic member 102 and a second terminal 104a disposed on top of the first power semiconductor 108 and electrically connected to a load (not shown) A second power semiconductor 118 mounted on a surface of the second metal member 104 opposite to the surface corresponding to the first power semiconductor 108, And a third metal member 106 disposed on an upper surface of the first metal member 118 and including a third terminal 106a electrically connected to the power source (not shown).

The first to third metal members 102, 104, and 106 may have a plate shape or a plate shape made of a metal material having excellent electrical conductivity and heat dissipation characteristics. Typically, copper (including pure copper and copper alloy) may be used as the metal material.

For example, the power source described above may be an electric storage medium such as a battery, and the load may be a motor. In this case, the power module 100 may function as a switch element that receives power for driving the motor from the battery and supplies the power to the motor.

The metal members 102, 104, and 106 according to the present embodiment are formed such that the terminals 102a, 104a, and 106a electrically connected to the power source or the load do not exist separately from the metal members 102, 104, and 106, As a part of the member.

Referring to FIG. 2, a first terminal 102a connected to a positive electrode of a power source is formed at one end of the first metal member 102 so as to protrude in a specific direction. That is, the first terminal 102a is physically integrated with the first metal member 102 and corresponds to a part of the first metal member 102. [

Similarly, the third terminal 106a connected to the cathode (-) of the power source and the second terminal 104a connected to the load are also connected to the third metal member 106 and the second metal member 104, .

1 and 3, the first terminal 102a and the third terminal 106a extend in the first direction (-y direction), and the second terminal 104a extends in the second direction (y direction) Lt; / RTI > The first terminal 102a and the third terminal 106a have different heights in the thickness direction (z direction) of the power module 100 and are arranged to be offset from each other in the (x) direction.

Referring to FIG. 3, the first terminal 102a may have a shape in which a portion of the first metal member 102 is bent in the (z) direction and then elongated in the -y direction. In this manner, The third terminal 106a may have a shape in which a portion of the third metal member 106 is bent in the (-z) direction and then elongated in the (-y) direction. However, this is merely an example, and the first and third terminals 102a and 106a may be configured to extend in the same plane from the first and third metal members 102 and 106 without the bending described above.

A first power semiconductor 108 is mounted on one side of the first metal member 102. At this time, the first diode 110 may be mounted on the side of the first power semiconductor 108 on the same surface. A second diode 116 may be disposed on a side of the second power semiconductor 118 on one side of the second metal member 104 on which the second power semiconductor 118 is mounted.

The power semiconductors 108 and 118 include a field effect transistor (FET), a metal oxide semiconductor FET (MOSFET), and insulated gate bipolar transistor (IGBT) semiconductor devices. For example, power MOSFET devices can have a double-diffused metal oxide semiconductor (DMOS) structure, unlike conventional MOSFETs, with high-voltage, high-current operation.

Referring to FIG. 3, the first and second power semiconductors 108 and 118 may be bonded to the first and second metal members 102 and 104 by adhesive layers 140 and 142. For example, when adhered by soldering, the adhesive layers 140 and 142 become solder layers. However, the present invention is not limited thereto, and adhesion can be performed using an electrically conductive adhesive.

Referring to FIG. 2, a spacer 112 electrically connecting the first power semiconductor 108 to the second metal member 104 is stacked on the first power semiconductor 108. For example, the spacer 112 may be bonded to the first power semiconductor 108 by an adhesive layer 141.

 The first power semiconductor 108 and the second metal member 104 are spaced apart from each other by the thickness of the spacer 112 via the spacer 112 and are electrically connected to each other.

The spacer 112 electrically connects the first power semiconductor 108 to the second metal member 104 and has a predetermined thickness so as to bond the wire to the first power semiconductor 108 of the subsequent process Can be easily performed.

The spacer 112 may be a material having electrical conductivity, and may include a metal material.

Optionally, if the first diode 110 is disposed on the side of the first power semiconductor 108, the spacer 112 is also stacked on top of the first diode 110. In this case, the first power semiconductor 108 and the first diode 110 are electrically connected to the second metal member 104 by the spacers 112.

The third metal member 106 disposed on top of the power semiconductor 118 may also be bonded together by a layer of adhesive layer 143. [

1 and 2, first and second signal terminals 126 and 128, which apply a signal to the gates of the first power semiconductor 108 and the second power semiconductor 118, For example, wire bonding, to the gate terminals of the first power semiconductor 108 and the second power semiconductor 118, respectively.

At this time, the first signal terminal 126 may be arranged to extend in the (-x) direction, and the second signal terminal 128 may be arranged in the (x) direction opposite thereto.

The first signal terminal 126 and the second signal terminal 128 are disposed between the first terminal 102a and the second terminal 104a or between the third terminal 106a and the second terminal 104a .

The first terminal 102a is electrically connected to the collector of the first power semiconductor 108 and the third terminal 106a is electrically connected to the emitter of the second power semiconductor 118. [ . While the second terminal 104a is connected to the emitter of the first power semiconductor 108 and the collector of the second power semiconductor 118. [

The power module 100 according to the present embodiment is constructed such that a metal member on which a power semiconductor is mounted is connected to a collector and / or an emitter of the power semiconductor and a heat radiation pad for discharging high heat generated during driving of the power semiconductor to the outside And serves as a power supply terminal at the same time.

That is, since the first to third terminals 102a, 104a, and 106a serving as power terminals correspond to a part of the first to third metal members 102, 104, and 106, respectively, To the power semiconductor.

Fig. 4 schematically shows the heat radiation area of the power module 100 according to the present embodiment. Referring to FIG. 4, the first and second metal members 102 and 104 on which the first power semiconductor 108 and the second power semiconductor 118 are mounted are made of a metal having excellent heat dissipation characteristics, for example, copper And serves as a heat radiating pad for discharging the heat generated from the first power semiconductor 108 and the second power semiconductor 118 to the outside. Since the third metal member 106 stacked on the second power semiconductor 118 is also in contact with the second power semiconductor 118, the heat generated by the second power semiconductor 118 is dissipated to the outside. .

For example, reference numeral 310 denotes the heat radiation area of the collector of the first power semiconductor 108, and reference numeral 320 denotes the emitter of the first power semiconductor 108 and the emitter of the second power semiconductor 118 And a reference numeral 330 denotes an emitter heat dissipation area of the second power semiconductor 118. The emitter area

In this embodiment, since the first to third metal members 102, 104 and 106 are used as a power supply terminal, the first to third terminals 102a, 104a and 106a also function as heat radiating pads do.

Conventionally, a power supply terminal for supplying power to a power semiconductor is separately manufactured, and then a metal member (or a lead frame) on which the power semiconductor is mounted is bonded to each other using a special bonding technique such as wire bonding or ultrasonic bonding . According to this conventional technique, the power supply terminal merely functions as an electrical connecting member.

However, in the case of this embodiment, since the power terminals (i.e., the first to third terminals) are not separately manufactured and joined, but a part of the metal member serving as the heat radiating pad is used as it is, .

 Compared with a conventional power module that connects terminals, the junction inductance can be drastically reduced as compared with a case where a separate terminal is connected, thereby improving the switching efficiency.

3, on one surface of the first metal member 102 opposite to the surface on which the first power semiconductor 108 is mounted, a fourth metal member 150 (for example, A fifth metal member 156 is disposed on the opposite surface of the one surface of the third metal member 106 opposite to the surface corresponding to the second power semiconductor 118 with the second electrical insulator 154 interposed therebetween .

The fourth and fifth metal members 150 and 156 may be heat dissipation plates made of a metal having excellent thermal conductivity, for example, copper (including a copper alloy).

The first and second electrical insulators 152 and 154 are used for insulation between the metal members. In order to maximize the heat dissipation characteristics, a ceramic material typically having excellent thermal conductivity may be used. As such a ceramic material, for example, Al 2 O 3 , AlN or the like can be used.

Finally, the power module 100 is enclosed in a housing 160 molded by epoxy or other molding compound.

5, a power module 100 according to a second embodiment of the present invention is shown.

Referring to Fig. 5, the second embodiment differs from the first embodiment only in the structure of the second metal member 104, and the other structures are substantially the same. According to the second embodiment, the second metal member 104 is not in the form of a simple plate but in the form of a hollow plate with an empty space 1041 in the middle. The fluid can pass through the hollow space 1041, and the cooling efficiency of the second metal member can be maximized by flowing the cooling medium in the hollow space.

In order to maximize the cooling efficiency, the inner surface of the empty space may have protrusions 1042 to increase the surface area. As another example, it is also possible to form a groove instead of the projection 1042. [

6 is a diagram illustrating a case where power modules according to an embodiment of the present invention are used in parallel. Since the power module according to the embodiment of the present invention has a volume smaller than that of the conventional power module, it is possible to integrate more power modules with a smaller area by increasing the degree of integration of devices when connected in parallel.

In the case of the present invention, the plurality of power semiconductors have a structure in which they are stacked in a direction perpendicular to each other without being disposed laterally on the same plane. In the case where a plurality of power semiconductors are disposed side by side in the same plane as in the prior art, as the number of power semiconductors increases, the area of the plane occupied by the power semiconductors increases, and thus, The area also increases proportionally. Generally, electrical insulators used in power modules are costly ceramics with good thermal conductivity, so cost reduction is possible when the use of these materials is reduced.

According to embodiments of the present invention, as the plurality of power semiconductors are stacked vertically, the area of the plane occupied by the power semiconductors does not exhibit a substantially large increase even though the number of power semiconductors is increased. Therefore, since the area of the electric insulator for covering such an area is not substantially increased, the use of the expensive ceramics described above can be reduced and cost reduction can be achieved. Even if the area of the electrical insulator excellent in thermal conductivity is not increased, the power semiconductor can be used as a heat radiation pad almost entirely over the metal member to which the power semiconductor is mounted.

It will be apparent to those skilled in the art that various modifications, substitutions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. will be. Therefore, the embodiments disclosed in the present invention and the accompanying drawings are intended to illustrate and not to limit the technical spirit of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments and the accompanying drawings . The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: Power module
102, 104 and 106: first, second and third metal members
102a, 104a, 106a: first, second and third terminals
108, 118: first and second power semiconductors
112, 120: first and second spacers
126, 128: first and second signal terminals

Claims (12)

A first metal member including a first terminal electrically connected to a power source;
One or more first power semiconductors mounted on one side of the first metal member;
A second metal member disposed on the first power semiconductor and including a second terminal electrically connected to the load;
One or more second power semiconductors mounted on a surface of the second metal member opposite to a surface corresponding to the first power semiconductor; And
A third metal member disposed on an upper surface of the second power semiconductor and including a third terminal electrically connected to the power source;
/ RTI >
Wherein at least one of the first terminal, the second terminal and the third terminal corresponds to a part integrally formed with the first metal member, the second metal member and the third metal member,
Power module. The method according to claim 1,
Wherein the first terminal and the third terminal are elongated in a first direction and the second terminal is elongated in a second direction different from the first direction,
Power module. 3. The method of claim 2,
Wherein the first terminal and the third terminal have different heights and are staggered,
Power module. 3. The method of claim 2,
Wherein at least one of the first terminal and the third terminal is bent at a predetermined angle with respect to a direction perpendicular to the first direction and then extends in a first direction,
Power module. The method according to claim 1,
Wherein at least one first diode is mounted on a surface of the first metal member on which the first power semiconductor is mounted,
Wherein one or more second diodes are mounted on a surface of the second metal member on which the second power semiconductor is mounted,
Power module. The method according to claim 1,
Wherein a first signal terminal coupled to the first power semiconductor and a second signal terminal coupled to the second power semiconductor are disposed in opposite directions,
Power module. The method according to claim 6,
Wherein the first signal terminal and the second signal terminal are disposed between the first terminal and the third terminal,
Power module The method according to claim 1,
Wherein a spacer capable of electrically connecting the first power semiconductor and the second metal member is disposed between the first power semiconductor and the second metal member,
Power module. The method according to claim 1,
Wherein the second metal member is in the form of a hollow plate including a passage through which fluid can pass, The method according to claim 1,
Wherein the first terminal is electrically connected to a collector of the first power semiconductor,
The third terminal is electrically coupled to an emitter of the second power semiconductor,
The second terminal being connected to the emitter of the first power semiconductor and the collector of the second power semiconductor,
Power module The method according to claim 1,
A fourth metal member is disposed on the opposite surface of the first metal member on which the first power semiconductor is mounted with a first electrical insulator interposed therebetween,
And a fifth metal member is disposed on a surface of the third metal member opposite to the surface corresponding to the second power semiconductor with a second electrical insulator interposed therebetween.
Power module. 12. The method of claim 11,
Wherein at least one of the first electric insulator and the second electric insulator comprises Al 2 O 3 or AlN,
Power module
KR1020160108545A 2016-08-25 2016-08-25 power module KR101897639B1 (en)

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EP4181192A1 (en) * 2021-11-11 2023-05-17 Shinko Electric Industries Co., Ltd. Semiconductor device

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KR102442951B1 (en) 2022-02-04 2022-09-15 (주)아이에이파워트론 Electrical connection and integrated fixtures in terminals in power modules

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4181192A1 (en) * 2021-11-11 2023-05-17 Shinko Electric Industries Co., Ltd. Semiconductor device

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