KR20180011982A - Organic light emitting display device - Google Patents

Abstract

According to an embodiment of the present invention, an organic light emitting display device can improve an aperture ratio while minimizing reflection due to external light. The organic light emitting display device comprises: a thin film transistor on a substrate; a first bank layer and a planarization layer for covering the thin film transistor; a first electrode on the planarization layer, and connected to the thin film transistor; a second bank layer on the first bank layer; a light emitting unit including an organic material layer and an organic light emitting layer on the first electrode; and a second electrode on the light emitting unit, wherein the first bank layer is composed of the same material with the planarization layer on the same layer, and the second bank layer includes a black pigment.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light-

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light emitting display, and more particularly, to an organic light emitting display in which reflection by external light is minimized and an aperture ratio can be improved.

The organic light emitting diode (OLED) is a self-luminous display device in which holes and electrons are injected into the light emitting layer from an anode for injecting holes and an electrode for injecting electrons, respectively, And emits light when an exciton in which injected holes and electrons are coupled falls from an excited state to a ground state.

The organic light emitting display device is classified into a top emission type, a bottom emission type, and a dual emission type depending on a direction in which light is emitted, and a passive matrix type Matrix) and an active matrix (active matrix).

Unlike a liquid crystal display (LCD), an organic light emitting display does not require a separate light source and can be manufactured in a light and thin shape. In addition, the organic light emitting display device is not only advantageous from the viewpoint of power consumption by low voltage driving, but also has excellent color reproduction, response speed, viewing angle, and contrast ratio (CR) and is being studied as a next generation display device.

The organic light emitting display includes an organic light emitting device including a plurality of organic light emitting layers emitting light of different colors between two electrodes. For example, the organic light emitting layer may include a red light emitting layer for emitting red light, a green light emitting layer for emitting green light, and a blue light emitting layer for emitting blue light, which are separated into red subpixels, green subpixels, and blue subpixels, respectively . Each of the light emitting layers may be pattern-deposited using a mask that is opened per sub-pixel, for example, a fine metal mask (FMM).

The organic light emitting display includes a bank layer for defining each sub-pixel, and the bank layer of the organic light emitting display may be made of a transparent material. The light transmitted from the outside through the transparent bank layer is reflected by the metal under the bank layer, and the reflection due to the external light of the organic light emitting display device is increased.

The inventor of the present invention has recognized the above-mentioned problems and invented an organic light emitting display device in which the aperture ratio can be improved while minimizing reflection due to external light.

A further object of the present invention is to provide an organic light emitting diode (OLED) display device capable of minimizing the reflection of external light and improving the aperture ratio by improving the structure of the bank layer of the OLED display.

The solutions according to the embodiments of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

There is provided an organic light emitting display device capable of minimizing reflection due to external light and improving the aperture ratio in order to solve the above problems.

The organic light emitting diode display according to the embodiment of the present invention includes: A planarization layer covering the thin film transistor and the thin film transistor on the substrate; a first bank connected to the first bank layer and the planarization layer and connected to the thin film transistor; a second bank layer on the first bank layer; A light emitting portion including an organic material layer and an organic light emitting layer, and a second electrode on the light emitting portion, wherein the first bank layer is made of the same material in the same layer as the planarizing layer, and the second bank layer includes black pigment .

According to another aspect of the present invention, an organic light emitting diode display including an organic light emitting layer between a first electrode and a second electrode on a substrate includes a thin film transistor on the substrate, Includes a bank layer of a material comprising black pigment on a second area of the planarization layer, the first area having a first thickness and a second area having a second thickness greater than the first thickness, The brightness of the surface reflection due to external light is minimized compared to the existing structure, and outdoor visibility can be improved.

The details of other embodiments are included in the detailed description and drawings.

According to the OLED display device of the present invention, the bank layer may include a first bank layer made of the same material in the same layer as the planarization layer on the thin film transistor, and a second bank layer disposed on the first bank layer, Bank layer so as to minimize reflection caused by external light to reduce the surface reflection luminance, thereby improving outdoor visibility of the organic light emitting display device.

According to the OLED display device of the present invention, the bank layer may include a first bank layer made of the same material in the same layer as the planarization layer on the thin film transistor, and a second bank layer disposed on the first bank layer, And the bank layer, so that the optical density of the bank layer can be improved, so that it is possible to provide an organic light emitting display device capable of minimizing reflection due to external light.

According to the OLED display device of the present invention, at least a portion of the first electrode is formed to be positioned on the sloped surface of the first bank layer, thereby increasing the width of the emission region of the organic light emitting display device, The aperture ratio can be improved.

According to the organic light emitting diode display according to the embodiment of the present invention, the first bank layer and the planarization layer are simultaneously patterned by a halftone process, thereby simplifying the manufacturing process of the OLED display.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

The scope of the claims is not limited by the matters described in the contents of the invention, as the contents of the invention described in the problems, the solutions to the problems and the effects to be solved do not specify essential features of the claims.

FIG. 1 is a cross-sectional view illustrating an organic light emitting diode display according to an exemplary embodiment of the present invention. Referring to FIG.
2 is a cross-sectional view of a light emitting unit of an organic light emitting display according to an embodiment of the present invention.
3 is a view illustrating a reflection luminance measurement method of an OLED display according to an embodiment of the present invention.
4 is a cross-sectional view of an organic light emitting display according to another embodiment of the present invention.
5A to 5E are views for explaining a method of manufacturing an OLED display according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. Where the terms "comprises", "having", "done", and the like are used in this specification, other portions may be added unless "only" is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description. In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

Also, the first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, the present invention will be described in detail with reference to the drawings.

FIG. 1 is a cross-sectional view illustrating an organic light emitting diode display according to an exemplary embodiment of the present invention. Referring to FIG.

1, an OLED display 100 according to an exemplary embodiment of the present invention includes a substrate 110, a thin film transistor 120 and a first electrode 140 disposed on the substrate 110, And a light emitting unit 150 disposed between the second electrode 160 and a plurality of organic layers and an organic light emitting layer.

The OLED display 100 includes a plurality of sub pixels. The sub-pixel is a minimum unit area in which the actual light is emitted. In addition, a plurality of sub-pixels may be gathered to form a minimum group capable of expressing white light. For example, three sub-pixels may be a group, and red sub-pixels, green sub- Of the population. Alternatively, the four sub-pixels may be a group, and the red sub-pixel, the green sub-pixel, the blue sub-pixel, and the white sub-pixel may form a group. However, the present invention is not limited thereto, and various sub-pixel designs are possible. In FIG. 1, only one sub-pixel among a plurality of sub-pixels of the organic light emitting display device 100 is shown for convenience of explanation.

In the organic light emitting diode display 100 according to the embodiment of the present invention, the substrate 110 is formed of an insulating material for supporting various components of the OLED display 100. For example, the substrate 110 may be formed of not only glass but also plastic substrates such as PET (PolyEthylene Terephthalate), PEN (PolyEthylene Naphthalate), and polyimide. When the organic light emitting display is a flexible organic light emitting display, the substrate 110 may be made of a flexible material such as plastic. Further, when the organic light emitting device which is easy to be flexibly applied is applied to a vehicle lighting device or an automotive display, freedom in designing and designing a vehicle lighting device in accordance with the structure of the vehicle or the shape of the exterior Can be secured.

A buffer layer 131 may be formed on the substrate 110 to prevent penetration of impure elements from the substrate 110 and to protect the various components of the OLED display 100 from penetration. The buffer layer 131 may be formed of, for example, a single layer or a plurality of layers of a silicon oxide film (SiOx) or a silicon nitride film (SiNx), but is not limited thereto. The buffer layer 131 may be omitted depending on the structure and characteristics of the OLED display 100.

A thin film transistor 120 including a semiconductor layer 122, a gate electrode 121, a source electrode 123, and a drain electrode 124 is formed on the buffer layer 131.

Specifically, a semiconductor layer 122 is formed on the substrate 110, and a gate insulating layer 132 is formed on the semiconductor layer 122 to insulate the semiconductor layer 122 from the gate electrode 121. An interlayer insulating layer 133 for insulating the gate electrode 121 and the source electrode 123 and the drain electrode 124 is formed on the gate electrode 121. A source electrode 123 and a drain electrode 124 which are in contact with the semiconductor layer 122 are formed on the interlayer insulating layer 133, respectively. The source electrode 123 or the drain electrode 124 is electrically connected to the semiconductor layer 122 through the contact hole.

The semiconductor layer 122 may be formed of an amorphous silicon (a-Si), a polycrystalline silicon (poly-Si), an oxide semiconductor, an organic semiconductor, or the like. When the semiconductor layer 122 is made of an oxide semiconductor, it may be made of any one of indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), indium zinc oxide (IZO), and indium tin zinc oxide , But is not limited thereto.

The gate insulating layer 132 may be formed of a single layer or a multi-layer structure made of an inorganic insulating material such as a silicon oxide (SiOx), a silicon nitride (SiNx), or the like, but is not limited thereto.

The gate electrode 121 functions to transfer a gate signal to the thin film transistor 120 and is formed of at least one metal or alloy of aluminum (Al), molybdenum (Mo), titanium (Ti), and copper And may be formed of a single layer or a multilayer structure of the metal or the material, but is not limited thereto.

The source electrode 123 and the drain electrode 124 serve to transmit an external electrical signal from the thin film transistor 120 to the light emitting unit 150. The source electrode 123 and the drain electrode 124 may be made of at least one metal or alloy of aluminum (Al), molybdenum (Mo), titanium (Ti), copper (Cu) Or a multi-layer structure, but is not limited thereto.

Only the driving thin film transistor 120 connected to the first electrode 140 among the various thin film transistors that can be included in the OLED display 100 is shown in the present specification for convenience of explanation. Each sub-pixel may further include a switching thin film transistor, a capacitor, and the like.

A protective layer 170 is formed on the thin film transistor 120. The protective layer 170 may be made of an inorganic insulating material. For example, the protective layer 170 may be formed of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or the like, but is not limited thereto.

A planarization layer 134 is formed on the passivation layer 170. The planarization layer 134 functions to planarize components such as the thin film transistor 120 on the substrate 110. The planarization layer 134 may be composed of a single layer or a plurality of layers, and may be formed of an organic material. For example, the planarizing layer 134 may be made of polyimide, photoacryl, or benzocyclobutene (BCB), but is not limited thereto. The passivation layer 170 and the planarization layer 134 include contact holes 135 for electrically connecting the thin film transistor 120 and the first electrode 140 in each sub-pixel.

1, the planarization layer 134 of the organic light emitting diode display 100 according to the exemplary embodiment of the present invention includes a first region R1 having a first thickness A and a second region R1 having a first thickness A, And a second region R2 having a second thickness B that is greater than the first thickness R2. The first thickness A may be the thickness from the upper surface of the protective layer 170 to the lower surface of the first electrode 140. The second thickness B may be the thickness from the upper surface of the protective layer 170 to the lower surface of the second bank layer 145.

The organic light emitting diode display 100 according to the exemplary embodiment of the present invention includes a light emitting region EA and a non-light emitting region NEA, and the first region R1 of the planarization layer 134 includes a light emitting region EA And the second region R2 may be positioned to correspond to the non-emission region NEA. More specifically, the planarization layer 134 has a first thickness A in the first region R1 and a second thickness B in the second region R2 that is greater than the first thickness A The planarization layer 134 may be formed thicker in the non-emission region NEA than in the emission region EA.

The first region R1 of the planarization layer 134 corresponding to the emission region EA of the organic light emitting diode display 100 according to the exemplary embodiment of the present invention may include a planarization layer 134 corresponding to the non- Is located between the second region (R2) of the substrate (134). The second region R2 of the planarization layer 134 may serve as the first bank layer 134b defining the light emitting region EA of the OLED display 100. [

The planarization layer 134, which also includes a first region R1 having a first thickness A and a second region R2 having a second thickness B greater than the first thickness A, And may be formed through a halftone process using a halftone mask. A halftone mask is a mask having a light shielding portion, a light projecting portion, and a semi-light projecting portion, wherein the light shielding portion is a portion shielding light, the light transmitting portion is a portion transmitting light, Part. When such a halftone mask is used, patterns different in height can be formed by differently applying the amounts of light.

That is, the first bank layer 134b included in the planarization layer 134 may be formed of the same material in the same layer as the planarization layer region 134a, and patterned simultaneously through a halftone process. The first bank layer 134b of the planarization layer 134 may be formed of one of polyimide, photo acryl or benzocyclobutene (BCB) in the same manner as the planarization layer region 134a.

The dielectric constant of the first bank layer 134b of the planarization layer 134 of the OLED display 100 according to the embodiment of the present invention should be set in consideration of the leakage current to the adjacent sub-pixels. The leakage current is formed by a common layer such that the organic layers constituting the light emitting portion 150 correspond to a plurality of sub-pixels. Accordingly, when a current is applied to drive a specific sub-pixel, a common organic layer such as a hole injection layer or a hole transport layer A current flows to other sub-pixels adjacent to each other. This leakage current causes other unintended sub-pixels to emit light, resulting in color mixture between the sub-pixels and lowering the luminance. Therefore, the first bank layer 134b of the planarization layer 134 of the OLED display 100 according to the embodiment of the present invention should be formed of a material having a low dielectric constant, and specifically, 7 C / m2 (Coulomb / m2) Or less of the dielectric constant.

A first electrode 140 is formed on the planarization layer 134. The first electrode 140 may be an anode and is formed of a conductive material having a relatively large work function to supply holes to the organic light emitting layer of the light emitting portion 150. The first electrode 140 is electrically connected to the thin film transistor 120 through the contact hole 135 formed in the passivation layer 170 and the planarization layer 134. The first electrode 140 is electrically connected to the source of the thin film transistor 120, And may be electrically connected to the electrode 123. Also, the first electrode 140 is spaced apart from each sub-pixel. The first electrode 140 is formed of a transparent conductive material and may be formed of a material such as indium tin oxide (ITO), indium zinc oxide (IZO), or the like. It does not.

When the OLED display 100 according to the exemplary embodiment of the present invention is a top emission type, the light emitted from the organic light emitting layer of the light emitting unit 150 is reflected by the first electrode 140, A reflective layer made of a material such as aluminum (Al) or silver (Ag) having excellent reflection efficiency may be further formed on the upper or lower portion of the first electrode 140 so as to be emitted upward. .

For example, the first electrode 140 may have a two-layer structure in which a transparent conductive layer formed of a transparent conductive material and a reflective layer are sequentially stacked, or a three-layer structure in which a transparent conductive layer, a reflective layer, and a transparent conductive layer are sequentially stacked. The reflective layer may be silver (Ag) or an alloy containing silver, for example silver (Ag) or APC (Ag / Pd / Cu).

In the description of the embodiment of the present invention, the top emission means a method in which light emitted from the organic emission layer 153 is emitted in the direction of the second electrode 160, and a bottom emission (bottom emission) Refers to a method in which light is emitted in the direction of the first electrode 140, which is opposite to the direction of the upper light emitting method.

1, at least a portion of the first electrode 140 of the OLED display 100 according to the exemplary embodiment of the present invention is positioned on an inclined surface of the first bank layer 134b of the planarization layer 134 . In the conventional organic light emitting display, the first electrode is located under the bank layer, and the light emitting region of the OLED display device is limited to the width of the first electrode exposed under the bank layer. In contrast, when at least a portion of the first electrode 140 is positioned on the sloped surface of the first bank layer 134b as described above, the width of the first electrode 140 can be widened compared to the conventional structure, The width of the light emitting region (EA) of the device can be increased, so that the aperture ratio of the organic light emitting display device can be improved.

In the conventional OLED display device, since the bank layer is formed of a transparent material, the first electrode 140 including a layer made of a metal material, which is positioned below the bank layer and transmitted by the transparent bank layer, . Therefore, the OLED display 100 has a problem that reflection by external light is generated. When the organic light emitting diode display 100 is applied to a display device for a vehicle, it is difficult to apply the organic light emitting display device 100 to a vehicle display device due to reflection by external light. Therefore, in order to minimize reflection of external light of the OLED display, the second bank layer 145 of the organic light emitting diode display 100 according to the embodiment of the present invention should be made of a material that minimizes reflection of external light .

Referring to FIG. 1, a second region R2, that is, a first bank layer 134b having a second thickness B of the planarization layer 134 of the OLED display 100 according to an exemplary embodiment of the present invention, A second bank layer 145 including a black pigment may be disposed on the second bank layer 145. [ That is, the photoresist for forming the second bank layer 145 may be made of a material containing black pigment. Black pigments may be composed of organic or inorganic materials.

The black pigments may be composed of carbon-based or metal oxide. And, the photoresist may comprise photosensitive compounds comprising at least one of a polymer, a monomer, and a photoinitiator. And, the photoresist may include a solvent for dispersing the photosensitive compound.

As for the reaction mechanism, the photoresist before exposure has a form in which black pigment is dispersed in a photosensitive compound by a solvent. The solvent of the photoresist can be removed in a vacuum drying process or a curing process. After the exposure, the photoinitiator contained in the photosensitive compound generates radicals by light. The monomer contained in the photoresist has a double bond, and reacts with the radical of the photoinitiator to cross-link. As a result, a photoresist having a high molecular weight is formed after exposure, so that it is not dissolved by the developer. Then, in the step of developing using the developing solution, the portion which is not dissolved by the developing solution becomes the second bank layer 145, and the dissolved portion is removed by the developing solution. Therefore, the photoresist for forming the second bank layer 145 may be referred to as a negative photoresist.

And, in order to improve the crosslinking after exposure, the photoinitiator included in the photoresist may include an imine-based photoinitiator. The imine-based photoinitiator may comprise, for example, at least one of oxime and oxime ester. Oxime or oxime ester is a long wavelength photoinitiator that can improve cross-linking. The long wavelength here refers to more than 365 nm. The light source used in the exposure is a high-pressure mercury lamp and has a plurality of wavelengths. The multiple wavelengths may be G-line at 436 nm, H-line at 405 nm, and I-line at 365 nm. Among them, the photolithography process is performed using an I-line of 365 nm or more.

Since oxime or oxime ester can minimize the byproducts generated after exposure, it is possible to minimize the impurities generated by reaction of the by-products with other molecules in the baking process, which is a subsequent process after crosslinking. Since oxime or oxime ester is used together with black pigment, the second bank layer 145 having a high light-shielding property can be formed. Alternatively, it may be constituted by further containing acetophenone in the oxime or oxime ester as a photoinitiator.

For example, the oxime can be represented by the following formula (1).

Here, R and R 'may be any one of an alkyl group having 1 to 15 carbon atoms or a phenyl group.

For example, the oxime ester can be represented by the following formula (2).

Wherein R is an aryl group and R 'may be one of an alkyl group having 1 to 15 carbon atoms or a phenyl group.

The monomer may comprise six functional groups, for example DPHA (DiPentaerythritol HexaAcrylate). This DPHA has a double bond and can be rapidly cured by light after crosslinking. Therefore, the photoresist for forming the second bank layer 145 can be formed as a rigid film, and the developing performance is improved, thereby preventing the film from being lost even in a developing process in which the concentration of the developing solution is high.

And, the polymer of the photoresist includes a cardo-based polymer. The cadoline-based polymer has excellent heat resistance and compatibility with pigments, and is excellent in solubility. The polymer of the photoresist may further include an epoxy acrylate. Thus, polymers of photoresists, including cadmium series or epoxy acrylates, serve to improve dispersibility by allowing black pigments to be well dispersed within the polymer. The dispersibility refers to the uniformity of the photoresist. As the dispersibility improves, the uniform second bank layer 145 can be formed.

For example, a polymer of the cadmium series can be represented by the following formula (3).

The developing solution may be, for example, TMAH (TetraMethlymmonium Hydroxide) or KOH (Potassium Hydroxide).

In addition, since the second bank layer 145 includes black pigments, the optical density (OD) indicating the degree of blocking of light is increased. As the optical density increases, the reflection due to external light can be minimized. However, if the optical density is excessively high, the dielectric constant increases and leakage current may occur in the adjacent sub-pixels. Therefore, the optical density of the second bank layer 145 should preferably be 4 or less Do.

In addition, the second bank layer 145 is made of a material including black pigments, so that when the incident angle of the incident light is 45 degrees, the reflection brightness at 30 degrees of the reflection angle can be 30 nits or less. Therefore, the reflection by the external light can be improved and the reflection brightness can be reduced. The reflection brightness of the second bank layer 145 is measured by DMS803. Here, the reflection luminance may include the reflection luminance on the right and left sides of the organic light emitting display device. That is, the left-right reflection luminance may be 30 nit or less at an angle of reflection of 30 degrees when the incident angle of incident light is 45 degrees. When the organic light emitting display device is applied to a display device for a vehicle, a display device in which reflection by external light is minimized can be provided. Since the reflection of the external light of the organic light emitting display device can be minimized, it is possible to improve the visibility characteristics in the lateral direction of the organic light emitting display device.

In the case of the bank layer including black pigments, the taper characteristics of the bank layer during the forming process are poor, so that patterning is not easy and it is difficult to increase the optical density. However, in the OLED display 100 according to the embodiment of the present invention, the first bank layer 134b made of the same material is formed in the same layer as the planarization layer 134, and the first bank layer 134b formed on the first bank layer 134b The second bank layer 145 is made of a material including black pigments to provide an organic light emitting display device capable of forming a bank layer having an improved optical density and minimizing a leakage current.

1, the width of the lower end portion of the second bank layer 145 is set to a width of the second region B having the second thickness B of the planarization layer 134 so that the bank layers of the multi- R2, that is, the width of the upper end of the first bank layer 134b.

The light emitting portion 150 is formed on the first electrode 140, the first bank layer 134b, and the second bank layer 145. The light emitting unit 150 may include various organic layers as needed, and may include a plurality of organic light emitting layers. The organic layer may include at least one hole injection layer 151, a hole transport layer 152, and an electron transport layer 154. The plurality of organic layers included in the light emitting portion 150 may have a common layer structure so as to correspond to both the red sub-pixel R, the green sub-pixel G, and the blue sub-pixel B.

A second electrode 160 is formed on the light emitting portion 150. The second electrode 160 may be a cathode and may be formed of a conductive material having a low work function because electrons must be supplied to the organic light emitting layer of the light emitting portion. More specifically, the second electrode 160 may be a metal material such as magnesium (Mg), silver-magnesium (Ag), or the like, but is not limited thereto.

When the OLED display 100 according to the exemplary embodiment of the present invention is a top emission type, the second electrode 160 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO) (ITO), zinc oxide (ZnO), and tin oxide (TiO) based transparent conductive oxide, but the present invention is not limited thereto.

That is, in the OLED display 100 according to the embodiment of the present invention, the planarization layer 134 on the thin film transistor has a first region R1 having a first thickness A and a second region R1 having a larger thickness than the first thickness A. And a second region R2 having a thickness of 2 and having a bank layer 145 made of a material containing black pigments on the second region R2 of the planarization layer 134 Thereby minimizing reflection due to external light compared to the existing structure, thereby reducing the surface reflection luminance, thereby improving the outdoor visibility of the OLED display. The organic light emitting display 100 according to the embodiment of the present invention is formed such that at least a part of the first electrode 140 is positioned on an inclined surface of the second region R2, The aperture ratio of the organic light emitting display device can be improved by increasing the width of the organic light emitting diode (EA). In the OLED display 100 according to the exemplary embodiment of the present invention, the planarization layer 134 may be formed through a halftone process and the first bank layer 134b may be simultaneously formed. The manufacturing process can be simplified.

2 is a cross-sectional view of a light emitting unit of an organic light emitting display according to an embodiment of the present invention.

The light emitting unit 150 of the OLED display 100 according to the embodiment of the present invention will be described in more detail with reference to FIG.

2, the light emitting unit 150 of the OLED display 100 according to the exemplary embodiment of the present invention includes a hole injection layer 151 (HIL) disposed on the first electrode 140, A first hole transport layer 152a and a second hole transport layer 152b disposed on the first hole transport layer 152a and the second hole transport layer 152b disposed on the hole injection layer 151, The red light emitting layer 153a, the green light emitting layer 153b, and the blue light emitting layer 153c disposed on the first HTL, the third HTL, and the HTLs 152a, 152b, and 152c, And an electron transport layer (ETL) 154 disposed on the organic light emitting layer.

The first electrode 140 is disposed on the planarization layer 134 so as to correspond to each of the red sub pixel region R, the green sub pixel region G and the blue sub pixel region B defined on the substrate.

The hole injection layer 151 Is disposed on the first electrode 140 as a common layer so as to correspond to both the red sub pixel region R, the green sub pixel region G and the blue sub pixel region B.

The hole injection layer 151 may function to smooth the injection of holes and may be formed of HATCN (1,4,5,8,9,11-hexaazatriphenylene-hexanitrile), CuPc (cupper phthalocyanine), PEDOT (poly , 4) -ethylenedioxythiophene, PANI (polyaniline) and NPD (N, N-diphenylbenzidine), TPD (N, N'- -benzidine), α-NPB (Bis [N- (1-naphthyl) -N-phenyl] benzidine), TDAPB (1,3,5-tris (4-diphenylaminophenyl) benzene), TCTA -9-yl) triphenylamine, spiro-TAD (2,2 ', 7,7'-Tetrakis (N, N-diphenylamino) -9,9-spirobifluorene) and CBP -yl) biphenyl), but the present invention is not limited thereto.

The hole injection layer 151 may be formed by doping a p-type dopant into the material of the first hole transport layer 152a. In this case, the hole injection layer 151 and the second hole transport layer 152a can be formed in a continuous process in one process equipment. The p-type dopant may include, but is not limited to, F4-TCNQ (2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinidimethane).

The first hole transporting layer 152a is disposed on the hole injection layer 151 as a common layer so as to correspond to both the red sub pixel region R, the green sub pixel region G and the blue sub pixel region B. The first hole transporting layer 152a serves to smooth the transport of holes and may be formed by using NPD (N, N-dinaphthyl-N, N'-diphenylbenzidine), TPD (N, N'- (N, N-diphenylamino) -9,9-spirobifluorene) and MTDATA (4,4 '-tetrakis , 4 "-Tris (N-3-methylphenyl-N-phenylamino) -triphenylamine).

And the second hole transporting layer 152b is disposed on the first hole transporting layer 152a of the red sub pixel region R. [ And the third hole transporting layer 152c is disposed on the first hole transporting layer 152a of the green sub pixel region (G).

The second hole transport layer 152b and the third hole transport layer 152c function to smoothly transfer holes from the hole injection layer 151 to the red light emitting layer 153a and the green light emitting layer 153b, respectively.

In addition, the thicknesses of the second hole transporting layer 152b and the third hole transporting layer 152c may form an optical distance of a microcavity. The thickness of each of the second hole transporting layer 152b and the third hole transporting layer 152c is set such that the red light emitting layer 153a forms a micro cavity structure between the first electrode 140 and the second electrode 160 And the green light emitting layer 153b may be formed to form a micro cavity structure between the first electrode 140 and the second electrode 160. In the red sub pixel region R and the green sub pixel region G, The efficiency of the OLED display 100 can be improved by forming the optical distance of the cavity.

And the red light emitting layer 153a is disposed on the second hole transporting layer 152b of the red sub pixel region R. [ The red light emitting layer 153a may include a light emitting material that emits red light, and the light emitting material may be formed using a phosphor or a fluorescent material.

More specifically, the red light emitting layer 153a may include a host material including CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl) benzene), Ir (btp) (acetylacetonate) iridium (III)), Ir (piq) 2 (acac) (bis (1-phenylisoquinoline) (acetylacetonate) iridium A phosphorescent material containing a dopant including at least one of Ir (piq) 3 (tris (1-phenylquinoline) iridium (III)) and PtOEP (octaethylporphyrin platinum) (Phen) or perylene, but the present invention is not limited thereto.

And the green light emitting layer 153b is disposed on the third hole transporting layer 152c of the green sub pixel region G. [ The green light emitting layer 153b may include a light emitting material that emits green light, and the light emitting material may be formed using a phosphor or a fluorescent material.

More specifically, the green light emitting layer 153b may include a host material including CBP or mCP, and may be formed of Ir (ppy) 3 (tris (2-phenylpyridine) iridium (III)) or Ir (ppy) and a phosphorescent material including a dopant material such as an iridium complex containing bis (2-phenylpyridine) (acetylacetonate) iridium (III). Alternatively, Alq3 (tris (8-hydroxyquinolino) aluminum But the present invention is not limited thereto.

And the blue light emitting layer 153c is disposed on the first hole transporting layer 152a of the blue sub pixel region Bp. The blue light emitting layer 153c may include a light emitting material that emits blue light, and the light emitting material may be formed using a phosphor or a fluorescent material.

More specifically, the blue light-emitting layer 153c may include a host material including CBP or mCP, and may be selected from the group consisting of FIrPic (bis (3,5) -difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) iridium (4,4'-bis [4-di-p-tolylamino) stryl) biphenyl), DSA (1-4-di- But is not limited to, a fluorescent material containing any one of [4- (N, N-di-phenyl) amino] styryl-benzene, PFO (polyfluorene) polymer and PPV (polyphenylenevinylene) polymer.

The electron transporting layer 154 includes a red light emitting layer 153a, a green light emitting layer 153b and a blue light emitting layer 153c so as to correspond to both the red sub pixel region R, the green sub pixel region G and the blue sub pixel region B, .

The electron transporting layer 154 may serve to transport and inject electrons, and the thickness of the electron transporting layer 154 may be controlled in consideration of the electron transporting property.

The electron transporting layer 154 serves to smooth the transport of electrons and may be formed of Liq (8-hydroxyquinolinolato-lithium), Alq3 (tris (8-hydroxyquinolinato) aluminum), PBD 4-tert-butylphenyl) -1,3,4oxadiazole, TAZ (3- (4-biphenyl) 4-phenyl-5-tert-butylphenyl-1,2,4- triazole), spiro- 2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum), but the present invention is not limited thereto.

Further, an electron injection layer (EIL) may be further formed on the electron transport layer 154.

The electron injection layer (EIL) may be made of metal inorganic compounds such as BaF2, LiF, NaCl, CsF, Li2O, and BaO, but is not limited thereto.

Here, the structure is not limited according to the embodiment of the present invention, and the structure of the hole injection layer 151, the first hole transporting layer 152a, the second hole transporting layer 152b, the third hole transporting layer 153c, (154) may be omitted. The formation of at least one of the hole injection layer 151, the first hole transporting layer 152a, the second hole transporting layer 152b, the third hole transporting layer 153c and the electron transporting layer 154 It is possible.

The second electrode 160 is arranged on the electron transporting layer 154 so as to correspond to both the red sub pixel region R, the green sub pixel region G and the blue sub pixel region B.

The capping layer may be disposed on the second electrode 160. The capping layer serves to improve the light extracting effect of the OLED display device and includes a first hole transporting layer 152a, an electron transporting layer 154, a red light emitting layer 153a, a green light emitting layer 153b, and a blue light emitting layer 153c host Or < / RTI > The capping layer may be omitted depending on the structure or characteristics of the OLED display 100.

The organic light emitting layer 153 of the OLED display 100 according to the embodiment of the present invention may include at least one phosphorescent material. More specifically, the organic light emitting layer 153 includes a red light emitting layer 153a for emitting red light located in the red sub-pixel R, a green light emitting layer 153b for emitting green light located in the green sub- And a blue light emitting layer 153c for emitting blue light located in the blue sub-pixel B, as shown in FIG. The red light emitting layer 153a and the green light emitting layer 153b each include a phosphorescent material and the blue light emitting layer 153c and the green light emitting layer 153c include phosphorescent materials. ), Or the red light emitting layer 153a, the green light emitting layer 153b, and the blue light emitting layer 153c may all include a phosphorescent material.

The organic light emitting diode display 100 according to the exemplary embodiment of the present invention may be applied to a display device such as a TV, a mobile, a tablet PC, a monitor, a laptop computer, A display device including a lighting device, and the like. Or a wearable display device, a foldable display device, and a rollable display device.

3 is a view illustrating a reflection luminance measurement method of an OLED display according to an embodiment of the present invention.

3, when the 400 Knit light is incident on the OLED display 100 at 45 degrees (the incident light is represented by "X" in FIG. 3) Refers to the brightness of the reflected light. This reflection luminance is measured with a DMS803 instrument. The reflection brightness of the organic light emitting diode display 100 of FIG. 1 measured by using this equipment will be described. For example, the reflection brightness is 300 nit at a reflection angle of 30 degrees at an incident angle of 45 degrees at 400 Knit. When the reflection luminance is 300 nits or more, there arises a problem that the left and right visibility characteristics of the organic light emitting diode display 100 are deteriorated due to reflection by external light. Therefore, in order to minimize the reflection of external light by the OLED display 100, the bank layer should be formed of a material that does not reflect light transmitted from the outside. Accordingly, the inventors of the present invention have conducted various experiments to improve the material of the bank layer.

The inventors of the present invention constructed the bank layer with a material containing black pigments in order to minimize reflection of external light through various experiments.

1, in the case of the organic light emitting diode display 100 according to the embodiment of the present invention, the planarization layer 134 on the thin film transistor has a first region R1 having a first thickness A And a second region R2 having a second thickness B that is greater than the first thickness A and a second region R2 having a second thickness R2 greater than the first thickness A and including black pigment on the second region R2 of the planarization layer 134 And the bank layer 145 made of a material. When the incident angle of the light incident on the OLED display 100 is 45 degrees, the reflection brightness at 30 degrees of the reflection angle can be set to 30 nit or less. Accordingly, the organic light emitting diode display 100 according to the embodiment of the present invention can minimize the reflection due to external light compared to the conventional structure, thereby reducing the surface reflection luminance, thereby improving the outdoor visibility of the OLED display.

4 is a cross-sectional view of an organic light emitting display according to another embodiment of the present invention.

In the description of the organic light emitting diode display 200 according to another embodiment of the present invention, the same or corresponding elements in the previous embodiments will not be described in detail.

4, an OLED display 200 according to another embodiment of the present invention includes a substrate 210, a thin film transistor 220 disposed on the substrate 210, and a first electrode 240 And a light emitting unit 250 disposed between the first electrode 260 and the second electrode 260 and including a plurality of organic layers and an organic light emitting layer.

A buffer layer 231 may be formed on the substrate 210 to block penetration of impure elements from the substrate 210 and to protect the various components of the organic light emitting display device 200.

A thin film transistor 220 including a semiconductor layer 222, a gate insulating layer 232, a gate electrode 221, an interlayer insulating layer 233, a source electrode 223, and a drain electrode 224 is formed on the buffer layer 231, . A protective layer 270 is formed on the thin film transistor 220.

A planarization layer 234 is formed on the protective layer 270. The planarization layer 234 functions to planarize components such as the thin film transistor 220 on the substrate 210. For example, the planarization layer 234 may comprise, but is not limited to, polyimide, photoacryl, or benzocyclobutene (BCB).

4, the planarization layer 234 of the organic light emitting diode display 200 according to another embodiment of the present invention includes a first region R1 having a first thickness A and a second region R1 having a first thickness A, And a second region R2 having a second thickness B that is greater than the first thickness R2.

That is, the organic light emitting diode display 200 according to another embodiment of the present invention may include a light emitting region EA and a non-light emitting region NEA, and the first region R1 of the planarization layer 234 may include Emitting region EA, and the second region R2 may be positioned to correspond to the non-emitting region NEA. More specifically, since the planarization layer 234 has a first thickness A in the first region R1 and a second thickness B in the second region R2, Emitting region NEA than in the light-emitting region EA. The second region R2 of the planarization layer 234 may serve as a first bank layer 234b defining the light emitting region EA of the OLED display 200. [

A first electrode 240 is formed on the planarization layer 234. The first electrode 240 may be an anode and may be formed of a conductive material having a relatively large work function to supply holes to the organic light emitting layer of the light emitting unit 150. The first electrode 240 may be electrically connected to the thin film transistor 220 through a contact hole 235 formed in the passivation layer 270 and the planarization layer 234.

The second region R2 having the second thickness B of the planarization layer 234 of the organic light emitting diode display 200 according to another embodiment of the present invention or the first bank layer 234b may include black pigment and a second bank layer 245 made of a material including a black pigment. That is, the photoresist for forming the second bank layer 245 may be formed of a material containing a black pigment. The black pigments may be organic or inorganic.

Referring to FIG. 4, in the case of the organic light emitting diode display 200 according to another embodiment of the present invention, it may be configured to further include a spacer 246 on a part of the second bank layer 245. The spacer 246 may be made of a transparent material, and the transparent material may be one of polyimide, photo acryl, and benzocyclobutene (BCB).

In addition, the spacer 246 may include a black pigment in the same manner as the second bank layer 245 to reduce reflection by external light. In this case, the second bank layer 245 and the spacer 246 may be simultaneously patterned through a halftone process. That is, when the spacer 246 is formed of the same material as the second bank layer 245, the second bank layer 245 and the spacer 246 can be simultaneously formed through a halftone process, The manufacturing process of the display device can be simplified.

The light emitting portion 250 is formed on the first electrode 240, the first bank layer 234b, the second bank layer 245, and the spacer 246. The light emitting unit 250 may include various organic layers as necessary, and may include a plurality of organic light emitting layers.

A second electrode 260 is formed on the light emitting portion 250. The second electrode 260 may be a cathode and is formed of a conductive material having a low work function since electrons must be supplied to the organic light emitting layer of the light emitting portion.

That is, the OLED display 200 according to another embodiment of the present invention is configured such that the planarization layer 234 on the thin film transistor has a first region R1 having a first thickness A and a second region R1 having a first thickness A A second bank layer 245 made of a material containing black pigments on the second region R2 of the planarization layer 234 and including a second region R2 having a second thickness B, And the spacer 246 on the second bank layer 245. By minimizing reflection due to external light compared to the conventional structure, it is possible to reduce the surface reflection luminance, thereby improving the outdoor visibility of the OLED display.

The organic light emitting diode display 200 according to another embodiment of the present invention may form the first bank layer 134b while forming the planarization layer 134 through a halftone process. When the spacer 246 on the second bank layer 245 is made of the same material as that of the second bank layer 245, the second bank layer 245 and the spacer 246 are formed through a halftone process. The manufacturing process of the organic light emitting display device can be simplified.

5A to 5E are views for explaining a method of manufacturing an OLED display according to an embodiment of the present invention.

5A, a buffer layer 131 is formed on a substrate 110, and a semiconductor layer 122, a gate insulating layer 132, a gate electrode 121, an interlayer insulating layer 133 The source electrode 123, and the drain electrode 124 are formed. A protective layer 170 is formed on the thin film transistor 120.

Next, referring to FIG. 5B, a planarization layer 134 is formed on the passivation layer 170. The planarization layer 134 may be formed to have a first region R1 having a first thickness A and a second region R2 having a second thickness B greater than the first thickness A have.

More specifically, the first region R1 of the planarization layer 134 may be formed to have a first thickness A and correspond to the light emitting region EA, and the second region R2 of the planarization layer 134 may be formed to correspond to the light emitting region EA. Emitting region NEA having a second thickness B that is larger than the first thickness A and can be formed to correspond to the non-emitting region NEA. That is, the planarization layer 134 may be formed thicker in the non-emission region NEA than in the emission region EA, and the second region R2 of the planarization layer 134 may be formed thicker than the organic And may be the first bank layer 134b of the light emitting display device 100. [

The planarization layer 134, which includes a first region R1 having the first thickness A and a second region R2 having a second thickness B greater than the first thickness A, And may be formed through a halftone process using a halftone mask. That is, the first bank layer 134b of the planarization layer 134 may be formed of the same material in the same layer as the planarization layer region 134a, and patterned simultaneously through a halftone process.

Next, referring to FIG. 5C, a first electrode 140 is formed on the planarization layer region 134a of the planarization layer 134 and a portion of the first bank layer 134b. The first electrode 140 is electrically connected to the thin film transistor 120 of each sub-pixel through a contact hole 135 formed in the passivation layer 170 and the planarization layer 134.

Also, at least a portion of the first electrode 140 may be located on an inclined surface of the first bank layer 134b. The width of the first electrode 140 can be widened compared with the conventional structure when at least a portion of the first electrode 140 is positioned on the sloped surface of the first bank layer 134b, The aperture ratio of the organic light emitting display device can be improved by increasing the width (EA) width.

5d, a second region R2 having a second thickness B of the planarization layer 134, i. E., A material comprising a black pigment, on the first bank layer 134b, The second bank layer 145 is formed. The second bank layer 145 is made of a material including black pigments so that the reflection brightness at an angle of reflection of 30 degrees when the incident angle of incident light is 45 degrees can be made to be 30 nit or less. Therefore, the reflection by the external light can be improved and the reflection brightness can be reduced.

The width of the lower end portion of the second bank layer 145 may be smaller than the width of the upper end portion of the first bank layer 134b of the planarization layer 134 so that the bank layers of the multilayer structure can be stably formed.

Referring to FIG. 5E, a light emitting portion 150 is formed on the first electrode 140, the first bank layer 134b, and the second bank layer 145. Referring to FIG. The light emitting unit 150 may include various organic layers as needed, and may include a plurality of organic light emitting layers. Further, the OLED display 100 according to the embodiment of the present invention is manufactured by forming the second electrode 160 on the light emitting portion 150.

That is, in the OLED display 100 according to the embodiment of the present invention, the planarization layer 134 on the thin film transistor has a first region R1 having a first thickness A and a second region R1 having a larger thickness than the first thickness A. And a second region R2 having a thickness of 2 and having a bank layer 145 made of a material containing black pigments on the second region R2 of the planarization layer 134 Thereby minimizing reflection due to external light compared to the existing structure, thereby reducing the surface reflection luminance, thereby improving the outdoor visibility of the OLED display. The organic light emitting diode display 100 according to the embodiment of the present invention includes a first bank layer made of the same material in the same layer as the planarization layer on the thin film transistor and a second bank layer formed on the first bank layer, It is possible to provide an organic light emitting display device capable of minimizing reflection due to external light since the optical density of the bank layer can be improved. The organic light emitting diode display 100 according to the exemplary embodiment of the present invention is formed such that at least a portion of the first electrode 140 is positioned on an inclined surface of the second region R2, The aperture ratio of the organic light emitting display device can be improved by increasing the width of the area EA. The organic light emitting diode display 100 according to the exemplary embodiment of the present invention can form the first bank layer 134b while forming the planarization layer 134 through a halftone process, The manufacturing process can be simplified.

Therefore, the organic light emitting display according to the embodiment of the present invention includes a first bank layer formed of the same material in the same layer as the planarization layer on the thin film transistor, and a second bank layer formed on the first bank layer, Layer, it is possible to minimize the reflection caused by the external light and reduce the surface reflection luminance, thereby improving the outdoor visibility of the organic light emitting display device.

The organic light emitting diode display according to an embodiment of the present invention includes a first bank layer made of the same material in the same layer as the planarization layer on the thin film transistor and a second bank layer disposed on the first bank layer, It is possible to provide an organic light emitting display device capable of minimizing reflection due to external light since the optical density of the bank layer can be improved.

Also, the organic light emitting display according to the embodiment of the present invention can form at least a part of the first electrode on the inclined surface of the first bank layer, thereby improving the aperture ratio of the OLED display.

In addition, the organic light emitting display according to the embodiment of the present invention may be formed by patterning the first bank layer and the planarization layer simultaneously through a halftone process, thereby simplifying the process of the OLED display.

The organic light emitting display according to embodiments of the present invention can be described as follows.

The organic light emitting diode display according to the embodiment of the present invention includes: A planarization layer covering the thin film transistor and the thin film transistor on the substrate; a first bank connected to the first bank layer and the planarization layer and connected to the thin film transistor; a second bank layer on the first bank layer; A light emitting portion including an organic material layer and an organic light emitting layer, and a second electrode on the light emitting portion, wherein the first bank layer is made of the same material in the same layer as the planarizing layer, and the second bank layer includes black pigment And the bank layer defining the sub-pixel includes a first bank layer made of the same material in the same layer as the planarization layer on the thin film transistor and a second bank layer including black pigment on the first bank layer, The reflection by the light is minimized to reduce the surface reflection luminance, thereby improving the outdoor visibility of the organic light emitting display device. According to an embodiment of the present invention, at least a portion of the first electrode is formed to be positioned on an inclined surface of the first bank layer to increase the width of the light emitting region of the organic light emitting display, Can be improved. The organic light emitting diode display according to an embodiment of the present invention may be formed by simultaneously patterning the first bank layer and the planarization layer by a halftone process, thereby simplifying the manufacturing process of the OLED display.

According to another aspect of the present invention, the first bank layer and the planarization layer may be simultaneously formed by a halftone process.

According to another aspect of the present invention, the optical density of the second bank layer may be 4 or less.

According to another aspect of the present invention, the first bank layer may be made of one of polyimide, photo acryl, and benzocyclobutene (BCB).

According to another aspect of the present invention, when the incident angle of the light incident on the organic light emitting display device is 45 degrees, the reflection luminance at 30 degrees of the reflection angle of the organic light emitting display device may be 30 nit or less.

According to another aspect of the present invention, the width of the lower end of the second bank layer may be smaller than the width of the upper end of the first bank layer.

According to another aspect of the present invention, at least a portion of the first electrode may be located on an inclined surface of the first bank layer.

According to another aspect of the present invention, there is further provided a spacer on a partial area of the second bank layer, wherein the spacer may be made of a transparent material.

According to another feature of the invention, the transparent material can be one of polyimide, photo acryl, benzocyclobutene (BCB).

According to another aspect of the present invention, the memory device may further include a spacer located on the second bank layer and made of the same material as the second bank layer.

According to another aspect of the present invention, there is provided an OLED display including an organic light emitting layer between a first electrode and a second electrode, the OLED display including a first region having a first thickness and a second region having a first thickness, And a bank layer made of a material including black pigments on a second area of the planarizing layer, the second area having a large second thickness, so that reflection due to external light is minimized So that the outdoor visibility of the organic light emitting display device can be improved. The organic light emitting display according to an embodiment of the present invention is formed such that at least a portion of the first electrode is positioned on an inclined surface of the second region of the planarization layer to increase the width of the light emitting region of the organic light emitting display, The aperture ratio of the device can be improved. The organic light emitting display according to the embodiment of the present invention can form a planarization layer through a halftone process and simultaneously form a first bank layer, thereby simplifying the manufacturing process of the OLED display.

According to another aspect of the present invention, an organic light emitting display includes a light emitting region and a non-emitting region, wherein the first region corresponds to the light emitting region and the second region corresponds to the non-light emitting region.

According to another aspect of the present invention, the planarization layer may be made of one of polyimide, photo acryl, and benzocyclobutene (BCB).

According to still another aspect of the present invention, at least a part of the first electrode is located on the inclined surface of the second region of the planarization layer, so that the aperture ratio with respect to the existing structure can be improved.

According to still another aspect of the present invention, there is provided a liquid crystal display device, which further includes a spacer on a partial area of the bank layer, wherein the spacer comprises black pigment.

According to another aspect of the present invention, the bank layer and the spacer may be simultaneously formed by a halftone process.

According to another aspect of the present invention, the optical density of the bank layer may be 4 or less.

According to another aspect of the present invention, the dielectric constant of the planarization layer may be 7 C / m < 2 > or less.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, have. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

100: organic light emitting display
110: substrate
120: thin film transistor
121: gate electrode
122: semiconductor layer
123: source electrode
124: drain electrode
131: buffer layer
132: gate insulating layer
133: Interlayer insulating layer
134: planarization layer and first bank layer
135: contact hole
140: first electrode
145: second bank layer
150:
151: Hole injection layer
152: hole transport layer
152a: first hole transporting layer
152b: second hole transporting layer
152c: Third hole transport layer
153: organic light emitting layer
153a: red light emitting layer
153b: green light emitting layer
153c: blue light emitting layer
154: electron transport layer
160: Second electrode
170: protective layer
R: Red sub pixel area
G: green sub pixel area
B: blue sub pixel area

Claims (18)

A thin film transistor on a substrate;
A planarization layer and a first bank layer covering the thin film transistor;
A first electrode on the planarization layer and connected to the thin film transistor;
A second bank layer on the first bank layer;
A light emitting portion including an organic material layer on the first electrode and an organic light emitting layer; And
And a second electrode on the light emitting portion,
Wherein the first bank layer is made of the same material in the same layer as the planarization layer, and the second bank layer includes black pigment. The method according to claim 1,
Wherein the first bank layer and the planarization layer are simultaneously formed by a halftone process. The method according to claim 1,
And the optical density of the second bank layer is 4 or less. The method according to claim 1,
Wherein the first bank layer comprises one of polyimide, photo acryl, and benzocyclobutene (BCB). The method according to claim 1,
Wherein the organic light emitting display device has a reflection angle of 30 nits or less at a reflection angle of 30 degrees when the incident angle of the light incident on the organic light emitting display device is 45 degrees. The method according to claim 1,
And the width of the lower end of the second bank layer is smaller than the width of the upper end of the first bank layer. The method according to claim 1,
Wherein at least a portion of the first electrode is located on an inclined surface of the first bank layer. The method according to claim 1,
Further comprising a spacer on a portion of the second bank layer, wherein the spacer is made of a transparent material. 9. The method of claim 8,
Wherein the transparent material is one of polyimide, photo acryl, and benzocyclobutene (BCB). The method according to claim 1,
And a spacer disposed on the second bank layer and made of the same material as the second bank layer. An organic light emitting diode display comprising an organic light emitting layer between a first electrode and a second electrode on a substrate,
A thin film transistor disposed on the substrate;
A planarization layer on the thin film transistor; And
And a bank layer made of a material including black pigments,
Wherein the planarization layer includes a first region having a first thickness and a second region having a second thickness greater than the first thickness,
Wherein the bank layer is configured to be disposed on the second region of the planarization layer,
An organic light emitting display device improved in outdoor visibility by reducing brightness of surface reflection due to external light compared to existing structure. 12. The method of claim 11,
Wherein the organic light emitting display includes a light emitting region and a non-emitting region,
Wherein the first region is located corresponding to the light emitting region and the second region is located corresponding to the non-emitting region. 13. The method of claim 12,
Wherein the planarization layer comprises one of polyimide, photo acryl, and benzocyclobutene (BCB). 12. The method of claim 11,
Wherein at least a portion of the first electrode is positioned on an inclined surface of the second region of the planarization layer, thereby improving an aperture ratio of the first electrode relative to an existing structure. 12. The method of claim 11,
Further comprising a spacer on a portion of the bank layer,
Wherein the spacer comprises black pigment. 16. The method of claim 15,
Wherein the bank layer and the spacer are simultaneously formed by a halftone process. 12. The method of claim 11,
Wherein an optical density of the bank layer is 4 or less. 12. The method of claim 11,
Wherein the planarization layer has a dielectric constant of 7 C / m 2 or less.

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