KR20180013480A - Organic Light Emitting Display Device - Google Patents

Abstract

An organic light emitting display device according to an embodiment of the present invention includes a flexible substrate including a pixel region, a thin film transistor on the substrate, a protective layer on the thin film transistor, an organic light emitting element on the protective layer, and a structure. The structure is made of a black material. The maximum thickness of the structure is not less than 2 μm and not more than 3 μm. An angle from the end of the pixel region to a region having the maximum thickness of the structure is not less than 10 degrees and not more than 20 degrees. So, the external visibility of the organic light emitting display device can be improved.

Description

[0001] The present invention relates to an organic light emitting display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light emitting display, and more particularly, to an organic light emitting display capable of minimizing external light reflection and minimizing defects during a manufacturing process.

As the era of information age approaches, the field of flat panel display that visually displays electrical information signals is rapidly developing, and studies are being continued to develop performance such as thinning, light weight, and low power consumption for various display devices.

Typical display devices include a liquid crystal display device (LCD), a plasma display panel device (PDP), a field emission display device (FED), an electro-wetting device Display device (EWD), and organic light emitting display device (OLED).

The organic light emitting display device is a self light emitting display device, unlike a liquid crystal display device, which does not require a separate light source, and can be manufactured in a thin and lightweight form. In addition, the organic light emitting display device is advantageous not only in terms of power consumption by low voltage driving, but also in terms of color implementation, response speed, viewing angle, and contrast ratio (CR).

An organic light emitting display device is provided with an emission layer (EML) using organic materials between two electrodes made of an anode and a cathode. When holes in the anode are injected into the light emitting layer and electrons in the cathode are injected into the light emitting layer, injected electrons and holes recombine to form excitons in the light emitting layer to generate light. At this time, the light emitting layer includes a host material and a dopant material, and uses the interaction of the two materials. In this case, the host generates excitons from electrons and holes and transfers energy to the dopant. The dopant is a dye organic material to which a small amount of energy is added, and receives energy from the host to convert the light into light.

In the organic light emitting diode display, an injection layer or a transport layer is disposed between the anode and the light emitting layer and between the cathode and the light emitting layer to allow holes and electrons to smoothly move from the anode and the cathode to the light emitting layer.

In the organic light emitting display device including the light emitting layer using the organic material, the organic light emitting display device is encapsulated and sealed by using glass, metal, or film, To prevent oxidation of the light emitting layer and the electrode, and to protect the organic light emitting display device from mechanical or physical impact externally applied thereto.

[Prior Art Literature]

[Patent Literature]

One. [White organic light emitting device] (Patent Application No. 10-2007-0053472)

The organic light emitting display includes an anode, a cathode, and an organic light emitting device that emits light, including a light emitting layer. Each pixel region of the organic light emitting device is divided and defined through a bank.

A bank included in a conventional organic light emitting display is formed of a transparent organic material, polyimide. However, when the organic light emitting diode display is used from the outside, external light is reflected from the surface of the metal disposed under the bank through the transparent bank, thereby lowering the visibility of the organic light emitting diode display.

In order to manufacture an OLED display device, a fine metal mask (FMM), which is a deposition mask, is used to form a light emitting portion including a light emitting layer between electrodes. At this time, in order to prevent damage that may occur when the deposition mask disposed on the upper part of the bank comes into contact with the bank and to maintain a certain distance between the bank and the deposition mask, a spacer formed of polyimide as a transparent organic material do. However, the spacers disposed above the banks of the organic light emitting display cause defects in the deposition of the light emitting layer due to the remnants of the spacers caused by the load of the deposition mask due to the repeated manufacturing process.

The inventors of the present invention have recognized the above-mentioned problems and invented an organic light emitting display device having a new structure capable of minimizing external light reflection of the organic light emitting display device by improving the banks constituting the organic light emitting display device.

In addition, the inventors of the present invention invented an organic light emitting display in which the defects in the manufacturing process can be minimized by improving the bank and spacer structures of the OLED display.

The solutions according to the embodiments of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

An organic light emitting display according to an embodiment of the present invention includes a flexible substrate including a pixel region, a thin film transistor on the substrate, a protective layer on the thin film transistor, an organic light emitting element on the protective layer, The maximum thickness of the structure is not less than 2 占 퐉 and not more than 3 占 퐉 and the angle from the end of the pixel region to the maximum thickness of the structure is not less than 10 占 and less than 20 占.

An organic light emitting display according to an embodiment of the present invention includes a flexible substrate including a pixel region, a thin film transistor on the substrate, a protective layer on the thin film transistor, an organic light emitting element on the protective layer, The structure is composed of a black material, and the structure is composed of a single layer including a bank layer for partitioning a pixel region and a spacer for preventing damage to the organic light emitting element by a mask for forming an organic light emitting element.

The OLED display according to an exemplary embodiment of the present invention includes a substrate for an organic light emitting display and an integrated structure including a material for minimizing surface reflection and improving outdoor visibility on the substrate and the integrated structure includes a bank and a spacer Thickness, and sidewall angles are implemented with a specific causal relationship to achieve a specific optical density.

The OLED display device including the black material structure according to the exemplary embodiment of the present invention can provide an organic light emitting display device having improved external visibility by preventing external light from being reflected from the metal surface under the banks when the OLED display device is used from outside have.

The organic light emitting display device including the structure in which the bank and the spacer are integrated according to the embodiment of the present invention can provide an organic light emitting display device capable of minimizing defects due to the spacers in the manufacturing process of the organic light emitting display device.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

The scope of the claims is not limited by the matters described in the contents of the invention, as the contents of the invention described in the problems, the solutions to the problems and the effects to be solved do not specify essential features of the claims.

1 is a schematic plan view of an OLED display according to an embodiment of the present invention.
2 is a cross-sectional view illustrating a pixel included in a display region of an OLED display according to an exemplary embodiment of the present invention.
3 is a cross-sectional view illustrating a deposition mask and a structure in detail in the process of manufacturing an organic light emitting display according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. Where the terms "comprises", "having", "done", and the like are used in this specification, other portions may be added unless "only" is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

1 is a schematic plan view of an OLED display 100 according to an embodiment of the present invention.

1, an organic light emitting display 100 according to the present invention includes a thin film transistor (TFT) and a display area (A / A) in which a pixel 111 that emits light is disposed, And a circuit area (C / A) in which a circuit part connected to the pixel is disposed in the outer part of the display area A / A.

A display area A / A of the OLED display 100 includes a plurality of pixels 111 and a plurality of data lines 114 transmitting externally generated data signals to the pixels 111, A plurality of gate lines 112 are disposed. The detailed structure of the pixel 111 will be described with reference to FIG.

A circuit region C / A of the organic light emitting diode display 100 includes components related to various circuits for transmitting externally generated signals to the pixels 111 through a plurality of gate lines 112 and data lines 114 A circuit portion 118 is disposed.

The components associated with the circuit may include, for example, a data driver or a gate driver.

A digital video signal input from the outside of the data driver is converted into an analog video signal by using the gamma voltage generated by the gamma voltage generator. The converted video signal is transmitted to a plurality of pixels 111 through a plurality of data lines 114.

The gate driver includes a plurality of shift registers, and each shift register is connected to each gate line 112. The gate driver receives a gate start pulse (GSP) and a plurality of clock signals from a data driver and shifts the gate start pulse sequentially to each gate line 112 Thereby activating a plurality of connected pixels 111.

Components for encapsulation are disposed on the front surface of the substrate 110 in order to block the inflow of moisture or oxygen from the outside of the OLED display 100 to prevent oxidation of the light emitting layer and the electrodes.

2 is a schematic cross-sectional view illustrating a pixel included in a display area A / A of an OLED display according to an embodiment of the present invention, Sectional view.

Referring to FIG. 2, the OLED display 200 includes a substrate 210, a thin film transistor 220, and an organic light emitting diode 240.

The substrate 210 serves to support and protect the components of the organic light emitting diode display 200 disposed thereon. Recently, a plastic substrate such as a polyimide having a flexible characteristic is applied to various display devices.

On the substrate 210, a buffer layer 212 for preventing moisture, oxygen, and the like from penetrating from the outside of the substrate 210 is disposed. The buffer layer 212 may be formed of a single layer or a plurality of layers of silicon oxide (SiOx) or silicon nitride (SiNx). However, the buffer layer 212 may be omitted depending on the structure and characteristics of the OLED display 200 have.

The thin film transistor 220 disposed on the buffer layer 212 includes a gate electrode 222, a source electrode 224, a drain electrode 226, and a semiconductor layer 228.

The semiconductor layer 228 has a higher mobility than amorphous silicon or amorphous silicon and has low energy consumption and excellent reliability and can be applied to polycrystalline silicon ) Or an oxide semiconductor such as ZnO (Zinc Oxide) or IGZO (Indium-Gallium-Zinc Oxide), which is excellent in mobility and uniformity characteristics, but the present invention is not limited thereto. The semiconductor layer 228 may include a source region including a p-type or an n-type impurity, a drain region, and a channel between the two regions, a source region adjacent to the channel, And a low concentration doped region may be included between the drain regions.

 The gate insulating layer 231 is an insulating film composed of a single layer or a plurality of layers of silicon oxide (SiOx) or silicon nitride (SiNx), and is arranged such that a current flowing in the semiconductor layer 228 does not flow to the gate electrode 222. [

The gate electrode 222 is connected to the gate line and serves as a switch or a valve of the thin film transistor 220 through an electric signal transmitted from the outside. The gate electrode 222 may include a conductive metal such as copper (Cu), aluminum (Al), molybdenum (Mo), chrome (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and the like, or a single layer or multiple layers thereof. no.

The source electrode 224 and the drain electrode 226 are connected to the data line so that an electric signal transmitted from the outside is transmitted from the thin film transistor 220 to the organic light emitting diode 240. The source electrode 224 and the drain electrode 226 may be formed of a conductive metal such as copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium Ni, and neodymium (Nd), an alloy thereof, a single layer, or a multilayer structure. However, the present invention is not limited thereto.

An interlayer insulating layer 233 is disposed between the gate electrode 222 and the source electrode 224 and the drain electrode 226 in order to insulate the gate electrode 222 from the source electrode 224 and the drain electrode 226 .

A passivation layer 235 composed of an inorganic insulating film such as silicon oxide (SiOx) or silicon nitride (SiNx) is disposed on the top of the thin film transistor 220 to prevent unnecessary electrical connection between the elements of the thin film transistor 220 Contamination or damage from the outside can be prevented.

And may be classified into an inverted staggered structure and a coplanar structure depending on the positions of the constituent elements of the thin film transistor 220. In the thin film transistor of the inverted staggered structure, the gate electrode is located on the opposite side of the source electrode and the drain electrode with respect to the semiconductor layer. 2, the thin film transistor 220 of the coplanar structure has the gate electrode 222 positioned on the same side as the source electrode 224 and the drain electrode 226 with respect to the semiconductor layer 228.

Although the thin film transistor 220 is shown as a coplanar structure in FIG. 2, the thin film transistor may have an inverted staggered structure.

Also, for convenience of explanation, only the driving thin film transistor among various thin film transistors that can be included in the organic light emitting display device is shown, but a switching thin film transistor, a capacitor, and the like may be included in the organic light emitting display device.

And protects the thin film transistor 220 and alleviates the level difference caused by the thin film transistor 220. The parasitic capacitance generated between the thin film transistor 220 and the gate line and the data line and between the organic light emitting elements 240 The planarization layer 237 may be disposed on the top of the thin film transistor 220 to reduce parasitic capacitance. At this time, the planarization layer 237 may be formed of organic materials such as polyimide, photo acryl, and benzocyclobutene (BCB).

The organic light emitting diode 240 disposed on the planarization layer 237 includes an anode 242, a light emitting portion 244, and a cathode 246.

The anode 242 may be disposed on the planarization layer 237. The anode 242 serves to supply holes to the light emitting portion 244 and may be electrically connected to the thin film transistor 220 through a contact hole in the planarization layer 237. [

The anode 242 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), or the like, which is a transparent conductive material, but the present invention is not limited thereto.

When the organic light emitting diode display 200 is in the top emission mode in which the cathode 246 is disposed, the anode 242 can emit light emitted from the light emitting portion 244 to the anode 242 So that the cathode 246 can be more smoothly emitted in the upward direction in which the cathode 246 is disposed. Further, a two-layer structure in which a transparent conductive layer composed of a transparent conductive material and a reflective layer are sequentially stacked, or a three-layer structure in which a transparent conductive layer, a reflective layer, and a transparent conductive layer are sequentially stacked. The reflective layer may be silver (Ag) or an alloy containing silver.

A structure 251 disposed on the anode 242 and the planarization layer 237 is formed by dividing a pixel area (P / A) that actually emits light, similar to a bank in a conventional organic light emitting display, Can be defined.

A pixel for emitting light in the organic light emitting diode display 200 includes a sub pixel emitting one color, and each sub pixel may emit light of a different color.

For example, red light may be emitted in the first pixel, green light may be emitted in the second pixel, and blue light may be emitted in the third sub-pixel. As described above, one pixel can be formed by combining sub-pixels emitting light of different colors.

When the conventional organic light emitting display is used from the outside, external light is reflected from the surface of the metal disposed under the bank through the transparent bank, and the visibility of the organic light emitting display is deteriorated.

The organic light emitting diode display 200 according to the exemplary embodiment of the present invention includes a material used in the structure 251 as a black material capable of minimizing reflection of external light.

Hereinafter, the structure 251 will be described in which a photoresist is formed on the anode 242 and then a structure 251 is formed by photolithography.

Photoresist refers to a photosensitive resin capable of obtaining a pattern by changing the solubility in a developer by the action of light. The photoresist can be classified into a positive photoresist and a negative photoresist. The positive photoresist can obtain a pattern by increasing the solubility of the exposed portion in the developer and removing the exposed portion in the developing process. Then, the negative photoresist is greatly reduced in the solubility of the exposed portion in the developing solution, and the unexposed portion is removed in the developing step, thereby obtaining a pattern.

The photoresist for forming the structure 251 included in the organic light emitting diode display 200 according to the embodiment of the present invention is made of a material whose reflection of external light is minimized.

The photoresist for forming the structure 251 may be formed of a material containing a black pigment, which is a black material. The photoresist may be organic and may include photosensitive compounds comprising at least one of a polymer, a monomer, and a photoinitiator.

As to the reaction mechanism, the photoresist before exposure has a form in which black pigment is dispersed in a photosensitive compound. After exposure, the photoinitiator contained in the photosensitive compound generates radicals by light. The monomer has a double bond and reacts with the radical of the photoinitiator to cross-link. As a result, a photoresist having a high molecular weight is formed after exposure, so that it is not dissolved by the developer. Thereafter, in the step of developing using the developer, the portion that is not dissolved by the developer becomes the structure 251, and the portion dissolved by the developer is removed. The photoresist forming the structure 251 may be referred to as a negative photoresist.

To improve crosslinking after exposure, the photoinitiator may include imine-based. The imine series can be, for example, oxime or oxime ester. Oxime or oxime ester is a long wavelength photoinitiator that can improve cross-linking. The long wavelength here refers to more than 365 nm. The light source used in the exposure is a high-pressure mercury lamp and has a plurality of wavelengths. The multiple wavelengths may be G-line at 436 nm, H-line at 405 nm, and I-line at 365 nm. Among them, the photolithography process is performed using an I-line of 365 nm or more.

Since oxime or oxime ester can minimize the byproducts generated after exposure, it is possible to minimize the impurities generated by reaction of the byproducts with other molecules in the baking process, which is a subsequent process after crosslinking. Since the oxime or oxime ester is used together with the black pigment, the structure 251 having a high light shielding effect can be provided. Alternatively, the photoinitiator may be composed of an oxime or oxime ester, which further contains acetophenone.

For example, the oxime can be represented by the following formula (1).

[Chemical Formula 1]

Here, R and R 'may be any of an alkyl group having 1 to 15 carbon atoms or a phenyl group.

For example, the oxime ester can be represented by the following formula (2).

(2)

Wherein R is an aryl group and R 'may be one of an alkyl group having 1 to 15 carbon atoms or a phenyl group.

The monomer may comprise six functional groups, for example DPHA (DiPentaerythritol HexaAcrylate). This DPHA has a double bond and can be rapidly cured by light after crosslinking. Therefore, the photoresist for forming the structure 251 can be formed as a rigid film, and the developing performance is improved, thereby preventing the film from being lost even in a developing process in which the concentration of the developing solution is high.

The polymer includes a cardo-based polymer. The cadoline-based polymer has excellent heat resistance and compatibility with pigments, and is excellent in solubility. The polymer may further include an epoxy acrylate. Thus, the polymers comprising cadose series and epoxy acrylates serve to improve dispersibility by allowing black pigments to be well dispersed within the polymer. The dispersibility refers to the uniformity of the photoresist, and as the dispersibility improves, the uniform structure 251 can be formed.

For example, a cardo-based polymer can be represented by the following formula (3).

(3)

The developing solution may be, for example, TMAH (TetraMethlymmonium Hydroxide) or KOH (Potassium Hydroxide).

The structure 251 can be constituted of a material containing black pigment and a photosensitive compound to constitute a uniform film having improved dispersibility and to improve the developing property and prevent the film from being lost even in a developing process in which the concentration of the developing solution is high Therefore, the structure 251 can be formed in which the light shielding property is improved and the reflection by external light can be minimized.

Since the structure 251 is made of a material containing black pigment and a photosensitive compound, the reflection due to external light is reduced, so that the organic light emitting display 200 having improved reflection brightness can be provided.

The volume resistivity of the structure 251 can be made to be 1 × ^{10 15} Ω · cm or more. The higher the volume resistivity, the smaller the leakage current. Since the organic layers constituting the light emitting portion 244 constitute a common layer, when a current is applied in order to drive a specific sub-pixel, the leakage current flows through the organic layer such as the hole injection layer or the hole transport layer to other neighboring sub- Flowing phenomenon. This leakage current causes other unintended sub-pixels to emit light, resulting in color mixture between the sub-pixels and lowering the luminance. Therefore, when the volume resistivity is 1 x 10 < ¹⁵ > Ω · cm or more, it is possible to prevent color mixing and reduction in luminance between sub-pixels due to a leakage current. The volume resistivity can be measured, for example, with an Ultra High Resistance Meter R8340A.

When the structure 251 is made of a material containing black pigments and a photosensitive compound, the reflection brightness at 30 degrees of the reflection angle when the incident angle of external light is 45 degrees can be 30 nit or less. Thus, reflection by external light is improved, Can be reduced. The reflection brightness of the structure 251 can be measured by DMS803. Here, the reflection luminance may include the reflection luminance on the right and left sides of the organic light emitting display device. Therefore, when the left-right reflection luminance is 45 degrees at the incident angle of the external light, the reflection angle may be 30 degrees or less at 30 degrees. Accordingly, it is possible to improve the visual perception characteristic in the lateral direction of the organic light emitting diode display 200 according to the embodiment of the present invention.

The structure 251 defines a pixel region P / A in which light is actually emitted and defines a pixel thereon and forms a light emitting portion 244 of the organic light emitting diode 240 by using a fine metal mask (FMM) ) Is used.

In order to prevent damages that can be generated by contact between the bank and the deposition mask (FMM), and to maintain a predetermined distance between the banks and the deposition mask, the organic light emitting diode displays a transparent organic material such as polyimide, A spacer consisting of one of a photo acryl, a benzocyclobutene (BCB), and the like is disposed. However, the organic light emitting diode display of the present invention includes a structure 251 in which the banks and the spacers used in the organic light emitting diode display are integrated.

The organic light emitting diode display 200 according to the exemplary embodiment of the present invention may be configured such that a structure using a black material is formed by integrating a bank and a spacer so that a spacer disposed over the bank of the organic light emitting display is repeated It is possible to improve defects that are generated during the deposition of the light emitting layer by the remnants of the spacer generated due to the load of the deposition mask.

The detailed structure of the deposition mask and structure 251 is described in more detail in FIG.

A light emitting portion 244 is disposed between the anode 242 and the cathode 246. The light emitting portion 244 may emit light and may include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and the like. Accordingly, some save elements may be omitted.

The hole injecting layer and the hole transporting layer are disposed between the anode 242 and the light emitting layer to smoothly move the holes from the anode 242 to the light emitting layer.

The hole injection layer is disposed on the anode 242, and serves to smoothly inject holes. The hole injection layer may be formed by, for example, HAT-CN (dipyrazino [2,3-f: 2 ', 3'-h] quinoxaline-2,3,6,7,10.11-hexacarbonitrile), CuPc NPD (N, N'-bis (naphthalene-1-yl) -N, N'-bis (phenyl) -2,2'-dimethylbenzidine).

The hole transporting layer is disposed on the hole injecting layer and serves to smoothly transfer holes to the light emitting layer. The hole transporting layer may be formed of, for example, NPD (N, N'-bis (naphthalene-1-yl) -N, N'- TAD (2,2 ', 7,7'-tetrakis (N, N-dimethylamino) -9,9-spirofluorene) - (3-methylphenyl) -N, N'- , And MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenylamino) -triphenylamine).

Micro Cavity means that light of a specific wavelength is amplified by constructive interference because light is repeatedly reflected between two layers separated by an optical length. Since the wavelength of light emitted when the organic light emitting diode display 200 emits different light for each sub-pixel is different, a resonance distance should be set for each wavelength of light emitted from each sub-pixel in order to realize a micro cavity . In the organic light emitting diode display 200, the thickness of the hole transport layer may be differently adjusted to set the resonance distance for each sub-pixel to be different.

The light emitting layer is disposed on the hole transporting layer and can emit light of a specific color including a substance capable of emitting light of a specific color. In this case, the light emitting material may be formed using a phosphor or a fluorescent material.

A host material comprising CBP (4,4'-bis (carbazol-9-yl) biphenyl) or mCP (1,3-bis (carbazol-9-yl) benzene) , Acetylacetonate iridium, bis (1-phenylisoquinoline) acetylacetonate iridium, PQIr acac bis (1-phenylquinoline) acetylacetonate iridium, PQIr tris (1-phenylquinoline) iridium and PtOEP (octaethylporphyrin platinum A phosphorescent material, and a dopant. Or a fluorescent material containing PBD: Eu (DBM) 3 (Phen) or Perylene.

A phosphorescent material including a dopant material such as Ir complex including a host material including CBP or mCP and containing Ir (ppy) ₃ (tris (2-phenylpyridine) iridium) . Further, it may be made of a fluorescent material containing Alq ₃ (tris (8-hydroxyquinolino) aluminum).

When the light-emitting layer emits blue light, a dopant including a host material including CBP or mCP and containing FIrPic (bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) iridium) (4,4'-bis (2,2-diphenyl-ethen-1-yl) biphenyl), DSA (1-4-di- [4- (N, N-di-phenyl) amino] styryl-benzene, PFO (polyfluorene) polymer and PPV (polyphenylenevinylene) polymer.

The electron transporting layer and the electron injecting layer are disposed between the light emitting layer and the cathode 246, and smooth the movement of electrons from the cathode 246 to the light emitting layer.

The electron transporting layer is disposed on the light emitting layer and serves to transfer electrons from the electron injecting layer to the light emitting layer. The electron transport layer may be formed of, for example, Liq (8-hydroxyquinolinolato-lithium), PBD (2- (4-biphenyl) -5- (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and BAlq (4-biphenyl) (bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum).

The electron injection layer is an organic layer which is disposed on the electron transporting layer and smoothly injects electrons from the cathode 246. The electron injection layer is BaF2, LiF, NaCl, CsF, Li 2 O , and may be a metallic inorganic compound such as BaO, HAT-CN (dipyrazino [ 2,3-f: 2 ', 3'-h] quinoxaline-2, 3,6,7,10.11-hexacarbonitrile), CuPc (phthalocyanine), and NPD (N, N'-bis (naphthalene- , And the like.

The cathode 246 is disposed on the light emitting portion 244 and serves to supply electrons to the light emitting portion 244. The cathode 246 may be formed of a metal material such as magnesium (Mg), silver-magnesium (Ag: Mg) or the like, which is a conductive material having a low work function, but is not limited thereto.

The cathode 246 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITO) Zinc oxide (ITZO), zinc oxide (ZnO), and tin oxide (TiO 2).

A protective layer 248 for preventing contamination or damage from the outside of the organic light emitting diode 240 may be disposed on the cathode 246. The organic light emitting diode 240 may include a single layer or multiple layers of organic or inorganic materials. no.

3 is a cross-sectional view illustrating the deposition mask 353 and the structure 351 in detail in the process of manufacturing the organic light emitting diode display according to the embodiment of the present invention.

3 is a detailed view of the structure 251 of the OLED display 200 according to the embodiment of the present invention shown in FIG. 2, The detailed description thereof will be omitted.

3, the structure 351 and the deposition mask 360, which are disposed on the planarization layer 337 and the anode 342 of the organic light emitting diode, and the deposition mask 360 are disposed to be in contact with and supported by each other in the manufacturing process of the organic light emitting diode Thereby forming a light emitting portion of the organic light emitting element.

In the fabrication process of the organic light emitting diode display, the deposition mask 360 deposits the light emitting units on a pixel or sub-pixel basis. The deposition mask 360 is formed by passing an organic material through a mask sheet 362 made of a metal material through a mask hole 364 formed at a position corresponding to a pixel area P / Emitting portion constituting the light-emitting element is formed. In order to minimize defects in the deposition of the light emitting layer due to the residues of the spacer generated due to the load of the deposition mask in the manufacturing process in which the deposition mask is repeated in the manufacturing process of the organic light emitting diode display, It can be arranged to be supported on the structure 351 so as to solve such a problem.

The structure 351 preferably has optical density (OD) of 3 or more and 5 or less, which indicates the degree of blocking of light. At this time, the optical density (OD) is measured by an OD meter. The optical density of the structure 351 may vary depending on the thickness of the structure 351. The optical density of the structure 351 may be set to a value of approximately 2.0 탆 or more and 3.0 탆 or less as shown in Table 1 below.

Optical density Thickness (㎛) 3.3 2.0 4.1 2.5 4.9 3.0

The structure 351 should be made of a material having a high step coverage. Step coverage refers to the deposition of uniform thickness films on the bottom and walls of trenches and holes, such as reverse tapers. The taper angle of the structure 351 may be appropriately configured so that the layers included in the organic light emitting device to be formed on the structure 351 may be uniformly formed.

The structure 351 according to the embodiment of the present invention is formed by depositing a layer 351 having a largest thickness in a tapered area (T / A) and a structure 351 inclined from the end of the pixel area P / And a flat area (F / A) arranged to be held in contact with the mask 360.

The width and the width of the flat region F / A may vary depending on the deposition mask 360 and the pixel region P / A of the organic light emitting device.

The taper angle of the inclined region T / A of the structure 351 is set so that the deposition mask 360 disposed in contact with the optical density of the structure 351 on the structure 351 in the manufacturing process stably The thickness of the structure 351 should be set to an optimal value.

At this time, the taper angle is an angle from an end of the structure 351 contacting the pixel region P / A to an end of the flat region F / A having the largest thickness value of the structure 351, As shown in [Table 2], it can be configured to have a value of about 10.0 degrees to 20.0 degrees.

Thickness (㎛) Angle (º) 2.0 12.5 2.5 15.5 3.0 18.5

An organic light emitting display according to an embodiment of the present invention includes a flexible substrate including a pixel region, a thin film transistor on the substrate, a protective layer on the thin film transistor, an organic light emitting element on the protective layer, The maximum thickness of the structure is not less than 2 占 퐉 and not more than 3 占 퐉 and the angle from the end of the pixel region to the maximum thickness of the structure is not less than 10 占 and less than 20 占.

In the OLED display according to the embodiment of the present invention, the optical density of the structure is 3 or more and 5 or less.

The organic light emitting display according to an embodiment of the present invention contacts a mask for forming an organic light emitting device in a region having a maximum thickness of the structure.

The structure of the organic light emitting diode display according to the embodiment of the present invention divides the pixel region and prevents the organic light emitting diode from being damaged by the mask.

In the structure of the organic light emitting display according to the embodiment of the present invention, the region in contact with the mask is a flat region.

The structure of the organic light emitting diode display according to the embodiment of the present invention is composed of a polymer including a cardo-based polymer and an epoxy acrylate

The structure of the OLED display according to an embodiment of the present invention further includes a monomer including six functional groups.

The structure of the OLED display according to an embodiment of the present invention further includes a photoinitiator including one of oxime and oxime ester.

An organic light emitting display according to an embodiment of the present invention includes a flexible substrate including a pixel region, a thin film transistor on the substrate, a protective layer on the thin film transistor, an organic light emitting element on the protective layer, The structure is composed of a black material, and the structure is composed of a single layer including a bank layer for partitioning a pixel region and a spacer for preventing damage to the organic light emitting element by a mask for forming an organic light emitting element.

In the OLED display according to the embodiment of the present invention, the optical density of the structure is 3 or more and 5 or less.

The maximum thickness of the structure of the organic light emitting diode display according to the embodiment of the present invention has a value of 2 탆 or more and 3 탆 or less and an angle from the end of the pixel region to the maximum thickness of the structure is 10 ° or more, Respectively.

The OLED display according to an embodiment of the present invention makes contact with a mask in a region having a maximum thickness of the structure.

In the structure of the organic light emitting display according to the embodiment of the present invention, the region in contact with the mask is a flat region.

The structure of the organic light emitting diode display according to the embodiment of the present invention is composed of a polymer including a cardo-based polymer and an epoxy acrylate

The structure of the OLED display according to an embodiment of the present invention further includes a monomer including six functional groups.

The structure of the OLED display according to an embodiment of the present invention further includes a photoinitiator including one of oxime and oxime ester.

The OLED display according to an exemplary embodiment of the present invention includes a substrate for an organic light emitting display and an integrated structure including a material for minimizing surface reflection and improving outdoor visibility on the substrate and the integrated structure includes a bank and a spacer Thickness, and sidewall angles are implemented with a specific causal relationship to achieve a specific optical density.

The specific optical density of the structure of the organic light emitting display according to the embodiment of the present invention is 3 or more and 5 or less.

The specific causal relationship of the organic light emitting display according to the embodiment of the present invention is that the structure has a maximum thickness of 2 탆 or more and 3 탆 or less and an angle of 10 ° or more from the end of the structure to the maximum thickness , And has a value of 20 degrees or less.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

100, 200: organic light emitting display
110, 210: substrate
112: gate line 114: data line
111: pixel 118:
212: buffer layer 220: thin film transistor
222: gate electrode 224: source electrode
226: drain electrode 228: semiconductor layer
231: Gate insulating layer 233: Interlayer insulating layer
235: passivation layer 237, 337: planarization layer
240: organic light emitting element
242, 342: anode 244:
246: cathode 248: protective layer
251, 351: Structure
360: deposition mask
362: mask sheet 364: mask hole
A / A: display area
C / B: Circuit area
P / A: pixel area
T / A: Inclined area
F / A: flat area

Claims (19)

A flexible substrate including a pixel region;
A thin film transistor on the flexible substrate;
A protective layer on the thin film transistor; And
And an organic light emitting device and a structure on the protective layer,
Wherein the structure has a maximum thickness of 2 탆 or more and 3 탆 or less and the angle from the end of the pixel area to the maximum thickness of the structure is 10 이상 to 20 값 Emitting device. The organic light emitting display according to claim 1, wherein the optical density of the structure has a value of 3 or more and 5 or less. The OLED display according to claim 1, wherein the structure contacts a mask for forming an organic light emitting device in a region having a maximum thickness of the structure. The organic light emitting diode display according to claim 3, wherein the structure divides the pixel region and prevents damage of the organic light emitting element by the mask. The organic light emitting diode display according to claim 3, wherein the region of the structure contacting the mask is a flat region, The OLED display of claim 1, wherein the structure comprises a polymer comprising a cardo-based polymer and an epoxy acrylate. The OLED display of claim 1, wherein the structure further comprises a monomer having six functional groups. The OLED display of claim 1, wherein the structure further comprises a photoinitiator comprising one of oxime and oxime ester. A flexible substrate including a pixel region;
A thin film transistor on the flexible substrate;
A protective layer on the thin film transistor; And
And an organic light emitting device and a structure on the protective layer,
The structure is made of a black material, and the structure includes a bank layer for partitioning the pixel region, and a spacer for preventing damages of the organic light emitting element by a mask for forming the organic light emitting element. Emitting display device. The organic light emitting display according to claim 9, wherein the optical density of the structure has a value of 3 or more and 5 or less. 10. The structure according to claim 9, wherein the maximum thickness of the structure of the structure is 2 占 퐉 or more and 3 占 퐉 or less, and the angle from the end of the pixel region to the maximum thickness of the structure is 10 占Emitting device. The organic light emitting diode display according to claim 9, wherein the organic light emitting display is in contact with the mask in a region having a maximum thickness of the structure. 13. The organic light emitting display as claimed in claim 12, wherein a region where the mask and the structure contact with each other in the structure is a flat region. 10. The OLED display of claim 9, wherein the structure comprises a polymer comprising a cardo-based polymer and an epoxy acrylate. 10. The OLED display of claim 9, wherein the structure further comprises a monomer comprising six functional groups. 10. The OLED display of claim 9, wherein the structure further comprises a photoinitiator comprising one of oxime and oxime ester. A substrate for an organic light emitting display; And
And an integral structure on the substrate, the integrated structure including a material for minimizing surface reflection and improving outdoor visibility,
The integrated structure is implemented with a specific causal relationship of width, thickness, and sidewall angle to perform a bank and a spacer function together and obtain a specific optical density. The organic light emitting display according to claim 17, wherein the specific optical density of the structure has a value of 3 or more and 5 or less. 19. The method of claim 18, wherein the specific causal relationship is such that the maximum thickness of the structure has a value of 2 탆 or more and 3 탆 or less, and the angle from the end of the structure to the maximum thickness has a value of 10 캜 or more and 20 캜 or less Gt; organic light emitting display device.

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