KR20180006373A - 코어-셸 나노플레이트릿 필름 및 이를 사용하는 디스플레이 디바이스 - Google Patents

코어-셸 나노플레이트릿 필름 및 이를 사용하는 디스플레이 디바이스 Download PDF

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KR20180006373A
KR20180006373A KR1020177030879A KR20177030879A KR20180006373A KR 20180006373 A KR20180006373 A KR 20180006373A KR 1020177030879 A KR1020177030879 A KR 1020177030879A KR 20177030879 A KR20177030879 A KR 20177030879A KR 20180006373 A KR20180006373 A KR 20180006373A
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film
light
shell
precursor
core
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아드리앙 외끌랭
브리스 나달
끌로에 그라종
베누아 말레
엠마뉘엘 륄리에
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넥스닷
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3428—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3431—Selenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3432—Tellurides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Luminescent Compositions (AREA)
  • Liquid Crystal (AREA)
  • Planar Illumination Modules (AREA)
  • Nanotechnology (AREA)
  • Led Device Packages (AREA)
KR1020177030879A 2015-03-27 2016-03-25 코어-셸 나노플레이트릿 필름 및 이를 사용하는 디스플레이 디바이스 Withdrawn KR20180006373A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562139159P 2015-03-27 2015-03-27
US62/139,159 2015-03-27
EP15177407.2 2015-07-17
EP15177407.2A EP3072944A3 (en) 2015-03-27 2015-07-17 Core-shell nanoplatelets film and display device using the same
PCT/EP2016/056705 WO2016156266A1 (en) 2015-03-27 2016-03-25 Core-shell nanoplatelets film and display device using the same

Publications (1)

Publication Number Publication Date
KR20180006373A true KR20180006373A (ko) 2018-01-17

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KR1020177030879A Withdrawn KR20180006373A (ko) 2015-03-27 2016-03-25 코어-셸 나노플레이트릿 필름 및 이를 사용하는 디스플레이 디바이스

Country Status (6)

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US (1) US20180107065A1 (enExample)
EP (2) EP3072944A3 (enExample)
JP (1) JP2018512495A (enExample)
KR (1) KR20180006373A (enExample)
CN (1) CN107810250B (enExample)
WO (1) WO2016156266A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220030753A (ko) * 2020-09-03 2022-03-11 단국대학교 산학협력단 CdSe 나노플레이틀릿 제조 방법 및 이를 이용한 방사선 측정기

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105189671A (zh) * 2013-04-10 2015-12-23 威士伯采购公司 耐酸气涂层
CN105950151A (zh) * 2016-05-06 2016-09-21 京东方科技集团股份有限公司 一种热注入法合成的量子点及其合成方法、合成系统
JP6878915B2 (ja) * 2017-01-26 2021-06-02 東洋インキＳｃホールディングス株式会社 量子ドットおよび量子ドット含有組成物
CN110945661A (zh) * 2017-06-02 2020-03-31 奈科斯多特股份公司 光色转换层与具有其的显示设备
US10642139B2 (en) * 2017-06-02 2020-05-05 Nexdot Illumination source comprising nanoplatelets and display apparatus having the same
PL3630917T4 (pl) * 2017-06-02 2022-11-28 Nexdot Równomiernie zamknięte nanocząstki i ich zastosowania
EP3630919A1 (en) * 2017-09-22 2020-04-08 Nexdot Metastable aggregate and uses thereof
US10816939B1 (en) 2018-05-07 2020-10-27 Zane Coleman Method of illuminating an environment using an angularly varying light emitting device and an imager
US11184967B2 (en) 2018-05-07 2021-11-23 Zane Coleman Angularly varying light emitting device with an imager
RU2685669C1 (ru) * 2018-08-01 2019-04-22 федеральное государственное бюджетное образовательное учреждение высшего образования "Алтайский государственный университет" Способ получения коллоидных квантовых точек селенида цинка в оболочке хитозана
WO2020099284A1 (en) 2018-11-14 2020-05-22 Merck Patent Gmbh Nanoparticle
EP3739019B1 (en) * 2019-04-17 2024-04-03 Samsung Electronics Co., Ltd. Nanoplatelet
EP4107557A1 (en) * 2020-02-21 2022-12-28 Nexdot Colourless blue filter for glass container
US12031075B2 (en) * 2020-09-02 2024-07-09 The Regents Of The University Of California Systems and methods for quantum dot on nanoplatelet heterostructures with tunable emission in the shortwave infrared
CN112635695B (zh) * 2020-12-21 2023-07-21 深圳扑浪创新科技有限公司 一种量子点发光层及其制备方法和应用
CN115000276B (zh) * 2022-04-28 2025-01-10 南通大学 一种半导体纳米片白光led的制备方法
CN116590019B (zh) * 2023-05-05 2024-04-30 浙江工业大学 一种颜色可调与窄发光的片状纳米晶、其可控组装结构及试纸条和应用
CN118994691B (zh) * 2024-10-23 2025-04-01 宁波长阳科技股份有限公司 一种量子点/纳米片掺杂的涂布反射膜及其制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398700B (zh) * 2009-12-30 2013-06-11 Au Optronics Corp 使用量子點螢光粉之顯示裝置及其製造方法
KR101683270B1 (ko) * 2010-03-31 2016-12-21 삼성전자 주식회사 백색 발광 다이오드를 포함하는 액정 디스플레이 장치
US8702277B2 (en) * 2010-07-12 2014-04-22 Samsung Electronics Co., Ltd. White light emitting diode and liquid crystal display including the same
US8654064B2 (en) * 2010-10-18 2014-02-18 Samsung Display Co., Ltd. Backlight having blue light emitting diodes and method of driving same
WO2012078340A1 (en) * 2010-12-08 2012-06-14 The Board Of Trustees Of The University Of Illinois Reliable nanofet biosensor process with high-k dielectric
WO2013057270A1 (en) * 2011-10-19 2013-04-25 Solarwell Improved biomarkers and use thereof
US9159872B2 (en) * 2011-11-09 2015-10-13 Pacific Light Technologies Corp. Semiconductor structure having nanocrystalline core and nanocrystalline shell
WO2013162646A1 (en) * 2012-04-22 2013-10-31 Qd Vision, Inc. Coated semiconductor nanocrystals and products including same
WO2013078247A1 (en) * 2011-11-22 2013-05-30 Qd Vision, Inc. Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same
US9446397B2 (en) * 2012-02-03 2016-09-20 Siluria Technologies, Inc. Method for isolation of nanomaterials
KR101319728B1 (ko) * 2012-03-16 2013-10-18 세종대학교산학협력단 마이크로 캡슐형 양자점- 고분자 복합체, 상기 복합체의 제조 방법, 상기 복합체를 포함하는 발광다이오드 패키지, 및 상기 발광다이오드 패키지의 제조방법
CN104302572B (zh) * 2012-03-19 2018-02-02 奈科斯多特股份公司 包含各向异性平胶体半导体纳米晶体的发光设备及其制造方法
WO2014024068A2 (en) * 2012-08-06 2014-02-13 Koninklijke Philips N.V. Highly stable qds-composites for solid state lighting and the method of making them through initiator-free polymerization
CN104755585A (zh) * 2012-10-25 2015-07-01 皇家飞利浦有限公司 用于硅酮中的量子点的基于pdms的配体
EP2912140B1 (en) * 2012-10-25 2019-11-06 Lumileds Holding B.V. Pdms-based ligands for quantum dots in silicones
EP3087164A4 (en) * 2013-12-23 2017-07-12 The Texas A&M University System Nanosheet compositions and their use in lubricants and polishing slurries
WO2015108477A1 (en) * 2014-01-16 2015-07-23 Flatfrog Laboratories Ab Touch-sensing quantum dot lcd panel
CN103852817B (zh) * 2014-03-14 2016-05-11 宁波激智科技股份有限公司 一种应用于背光模组的量子点膜

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220030753A (ko) * 2020-09-03 2022-03-11 단국대학교 산학협력단 CdSe 나노플레이틀릿 제조 방법 및 이를 이용한 방사선 측정기

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EP3072944A3 (en) 2016-10-12
JP2018512495A (ja) 2018-05-17
EP3072944A2 (en) 2016-09-28
CN107810250B (zh) 2020-10-16
EP3274421A1 (en) 2018-01-31
WO2016156266A1 (en) 2016-10-06
CN107810250A (zh) 2018-03-16
US20180107065A1 (en) 2018-04-19

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