KR20180005962A - Cleaning apparatus of wafer - Google Patents

Cleaning apparatus of wafer Download PDF

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Publication number
KR20180005962A
KR20180005962A KR1020160086347A KR20160086347A KR20180005962A KR 20180005962 A KR20180005962 A KR 20180005962A KR 1020160086347 A KR1020160086347 A KR 1020160086347A KR 20160086347 A KR20160086347 A KR 20160086347A KR 20180005962 A KR20180005962 A KR 20180005962A
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steam
wafer
pure water
ipa
supplying
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KR1020160086347A
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Korean (ko)
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김대희
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주식회사 지엠텍
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Publication of KR20180005962A publication Critical patent/KR20180005962A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention relates to a wafer cleaning apparatus using isopropyl alcohol (IPA). More specifically, the present invention relates to a wafer cleaning apparatus to prevent a pattern from collapsing due to the surface tension of a cleaning solution by supplying IPA to clean the pattern surface of a wafer when the wafer is preheated by supplying steam to the wafer. A cleaning apparatus of the present invention, which supplies IPA to the pattern surface of a wafer, includes a spin chuck for holding the wafer; an IPA supply means for supplying IPA to the pattern surface of the wafer; and a steam supplying means for supplying steam to the back surface of the pattern surface to preheat the wafer.

Description

웨이퍼 세정장치{CLEANING APPARATUS OF WAFER}[0001] CLEANING APPARATUS OF WAFER [0002]

본 발명은 IPA(이소프로필알코올)를 이용하여 웨이퍼를 세정하는 장치에 관한 것으로서, 보다 상세하게는 웨이퍼에 스팀을 공급하여 예열한 상태에서 웨이퍼의 패턴면에 IPA를 공급하여 세정함으로써 세정액의 표면장력에 의한 패턴의 붕괴를 방지할 수 있는 웨이퍼 세정장치에 관한 것이다. More particularly, the present invention relates to an apparatus for cleaning a wafer using IPA (isopropyl alcohol), more specifically, by supplying IPA to a pattern surface of a wafer while supplying steam to the wafer and preheating the wafer, The present invention relates to a wafer cleaning apparatus capable of preventing collapse of a pattern caused by a wafer.

기존의 반도체 제조 공정에 있어서 습식세정의 건조는 현재 패턴 붕괴(Pattern Leaning or Collapse)를 방지하기 위하여 가온된 IPA(60℃~80℃)를 사용하여 건조하거나 초임계 CO2(Super Critical CO2, SCCO2)를 사용하여 기판을 건조하고 있다. 그러나 SCCO2는 고비용의 건조방식이라 극히 제한적으로 사용되고 있으며, 일반적으로는, 선폭 20nm 이하의 패턴이 형성된 기판을 세척하기 위하여, 특히 STI 공정과 스토리지 노드(Storage Node) 공정에서는 가온된 IPA 건조방법이 적용되고 있다.Drying of the wet scrubbing is the current pattern collapse (Pattern Leaning or Collapse) by drying or supercritical using an IPA (60 ℃ ~ 80 ℃) was warmed in order to prevent CO 2 (Super Critical CO 2 in the conventional semiconductor fabrication process, SCCO 2 ) is used to dry the substrate. However, since SCCO 2 is used in a very limited manner due to the high cost of drying method, generally, in order to clean a substrate having a pattern with a line width of 20 nm or less, a heated IPA drying method is used in a STI process and a storage node process .

패턴의 붕괴 메커니즘은 다음과 같이 설명할 수 있다. 도 1을 참조하면, 건조 공정 중에 σmax > σcrit의 조건이 형성될 때, 즉, 건조시 패턴이 받는 스트레스가 임계 스트레스보다 클 때, 패턴의 붕괴가 발생한다.The collapse mechanism of the pattern can be explained as follows. Referring to FIG. 1, when the condition of .sigma.max> .sigma.crit is formed during the drying process, that is, when the stress of the pattern during drying is larger than the critical stress, pattern collapse occurs.

상술한 패턴 붕괴를 방지하기 위해서는 σmax를 감소시켜야 하고, 이를 구현하기 위해서는 기판에 남아있는 세척액의 표면장력(Surface Tension, γ)을 감소시키거나 접촉각(Contact Angle,θ)을 90°에 근접하게 만들어야 한다. 이를 위한 방법으로서, 앞에서도 언급했듯이 현재 20nm 이하의 장치에서는 가온된 IPA 건조기를 기판의 건조에 사용하고 있으며 상온의 기판에 70℃이상의 IPA를 공급하여 상온의 N2를 이용하고 있다. 그러나 상온의 기판에 IPA를 공급하므로 건조공정이 시작될 때 순간적인 IPA의 온도는 냉각되어 가열된 IPA의 효과를 보지 못하고 중심부 지역에 패턴의 붕괴가 빈번하게 발생하고 있다. In order to prevent the above-described pattern collapse, it is necessary to reduce σmax. To realize this, it is necessary to reduce the surface tension (γ) of the cleaning liquid remaining on the substrate or make the contact angle (θ) do. As a method for this, as already mentioned, in the devices of 20 nm or less, a heated IPA dryer is used for drying the substrate, and N 2 at room temperature is supplied by supplying IPA at 70 ° C or more to a room temperature substrate. However, since the IPA is supplied to the substrate at room temperature, the instantaneous IPA temperature is cooled when the drying process is started, so that the effect of the heated IPA is not observed and the pattern collapse frequently occurs in the central region.

본 발명은 상술한 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은 웨이퍼에 스팀을 공급하여 예열한 상태에서 웨이퍼의 패턴면에 IPA를 공급하여 세정함으로써 세정액의 표면장력에 의한 패턴의 붕괴를 방지할 수 있는 웨이퍼 세정장치를 제공함에 있다. The present invention has been conceived to solve the problems described above, and it is an object of the present invention to provide an apparatus and a method for cleaning a wafer by supplying IPA to a pattern surface of a wafer while supplying steam to the wafer, And a wafer cleaning apparatus capable of preventing a wafer from being deteriorated.

위와 같은 기술적 과제를 해결하기 위하여 본 발명은 웨이퍼의 패턴면에 IPA(이소프로필알코올)를 공급하여 세정하는 장치에 있어서, 상기 웨이퍼를 고정하는 스핀척; 상기 웨이퍼의 패턴면에 IPA를 공급하는 IPA공급수단; 및 상기 웨이퍼를 예열하기 위하여 상기 패턴면의 이면에 스팀을 공급하는 스팀공급수단;을 포함한다. According to an aspect of the present invention, there is provided an apparatus for cleaning a wafer by supplying IPA (isopropyl alcohol) to a pattern surface of the wafer, the apparatus comprising: a spin chuck for holding the wafer; IPA supply means for supplying IPA to the pattern surface of the wafer; And a steam supply means for supplying steam to the back surface of the pattern surface to preheat the wafer.

또한 상기 스팀공급수단은, 순수를 공급하는 순수공급부; 상기 순수를 가열하여 스팀을 생성하는 스팀생성부; 및 상기 스핀척에 고정된 웨이퍼의 하부에 스팀을 분사하는 스팀분사부;를 포함하는 것이 바람직하다. The steam supply unit may include a pure water supply unit for supplying pure water; A steam generator for heating the pure water to generate steam; And a steam spraying unit spraying steam to a lower portion of the wafer fixed to the spin chuck.

또한 상기 스팀생성부는, 열전도성 재질의 몸체; 상기 몸체를 가열하는 히터; 상기 몸체의 외주면에 감겨지며, 순수 또는 스팀의 유로가 되는 순수 공급관; 및 상기 몸체가 내장되는 커버;를 포함하는 것이 바람직하다. The steam generating unit may include: a body of a thermally conductive material; A heater for heating the body; A pure water supply pipe which is wound on the outer peripheral surface of the body and serves as a pure water or steam flow path; And a cover in which the body is embedded.

또한 상기 몸체는 원기둥형태로 형성되는 것이 바람직하다. Further, the body is preferably formed in a cylindrical shape.

또한 상기 몸체의 외주면에는 나선형태의 그루브가 형성되는 것이 바람직하다.Further, it is preferable that a spiral groove is formed on the outer peripheral surface of the body.

또한 상기 순수 공급관은 상기 그루부에 장착되도록 나선형태로 형성되며, 일단은 순수가 유입되는 유입구가 형성되고, 타단은 스팀이 유출되는 유출구가 형성되는 것이 바람직하다. In addition, the pure water supply pipe may be formed in a spiral shape to be mounted on the grooved portion, and one end may be formed with an inlet through which pure water flows, and the other end may have an outlet through which steam flows.

또한 상기 커버와 몸체 사이에는 보온재가 더 구비되는 것이 바람직하다. Further, it is preferable that a heat insulating material is further provided between the cover and the body.

또한 상기 스팀분사부는 상기 스팀생성부에서 생성된 스팀과 캐리어가스를 혼합하여 분사하는 것이 바람직하다. Preferably, the steam injector mixes the steam generated by the steam generator with the carrier gas and injects the mixture.

본 발명에 따르면, 웨이퍼에 스팀을 공급하여 예열한 상태에서 웨이퍼의 패턴면에 IPA를 공급하여 세정함으로써 세정액의 표면장력에 의한 패턴의 붕괴를 방지할 수 있는 효과가 있다. According to the present invention, IPA is supplied to the pattern surface of the wafer in a state in which the wafer is preheated by supplying steam, thereby preventing the pattern from collapsing due to the surface tension of the cleaning liquid.

또한 웨이퍼에 예열을 위한 스팀을 효과적으로 공급할 수 있다. It is also possible to effectively supply the wafer with steam for preheating.

도 1은 종래기술에 있어, 세척 공정 중에 웨이퍼상에 형성된 패턴의 붕괴 과정을 설명하는 모식도이다.
도 2는 본 발명에 의한 일 실시예를 도시한 것이다.
도 3은 도 2에 도시된 실시예의 스팀공급수단을 도시한 것이다.
도 4 및 도 5는 도 3에 도시된 실시예의 스팀생성부를 도시한 것이다. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram illustrating a process of collapsing a pattern formed on a wafer during a cleaning process in the prior art; FIG.
2 shows an embodiment according to the present invention.
Fig. 3 shows the steam supply means of the embodiment shown in Fig.
4 and 5 show the steam generator of the embodiment shown in FIG.

이하, 첨부된 도면을 참조하여 본 발명에 의한 실시예의 구성 및 작용을 구체적으로 설명한다. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a configuration and an operation of an embodiment according to the present invention will be described in detail with reference to the accompanying drawings.

도 2를 참조하면, 본 발명에 의한 웨이퍼 세정장치(1)는 스핀척(10)과 IPA공급수단(20)과 스팀공급수단을 포함한다. Referring to FIG. 2, the wafer cleaning apparatus 1 according to the present invention includes a spin chuck 10, an IPA supply means 20, and a steam supply means.

상기 스핀척(10)의 상면에는 복수개의 지지대(12)가 형성되어 웨이퍼(W)를 패턴이 형성된 면(패턴면)이 위로 향하도록 지지하고 지지대(12)에 지지된 웨이퍼(W)를 클램프(13)에 의해 고정한 상태에서 회전시키는 구성요소이다. 상기 클램프는 공지의 수단이다. 따라서 상기 웨이퍼(W)는 지지대(12)에 지지되기 때문에 스핀척(10)의 상면에서 일정한 간극이 형성되도록 부상되어 지지된다. 상기 스핀척(10)은 하부에 구비된 스핀들(11)에 의해 회전된다. A plurality of supports 12 are formed on the upper surface of the spin chuck 10 so as to support the wafer W such that a surface on which a pattern is formed faces upward and a wafer W supported by the support base 12 is clamped (13) in a fixed state. The clamp is a known means. Therefore, the wafer W is supported by the support table 12, and thus supported on the spin chuck 10 so as to form a certain gap therebetween. The spin chuck 10 is rotated by a spindle 11 provided at a lower portion thereof.

상기 IPA공급수단(20)은 상기 웨이퍼(W)의 패턴면을 세정하기 위하여 상기 웨이퍼(W)가 상기 스핀척(10)에 고정된 상태로 회전할 때 상기 웨이퍼(W)의 패턴면에 IPA를 공급하는 구성요소이다. 통상 IPA는 60~80℃로 가온된 상태로 공급된다. The IPA supply means 20 applies IPA (polyvinylidene fluoride) to the pattern surface of the wafer W when the wafer W is rotated in a state fixed to the spin chuck 10 to clean the pattern surface of the wafer W. [ . Normally, IPA is supplied in a heated state at 60 to 80 ° C.

상기 스팀공급수단은 상기 웨이퍼(W)의 하면(패턴면의 반대면)에 공급되어 웨이퍼(W)를 예열하기 위한 구성요소이다. 도시된 바와 같이, 상기 스팀공급수단은 스팀분사부(40)를 포함하는데, 상기 스팀분사부(40)는 상기 스핀척(10)의 상면과 웨이퍼(W) 사이의 간극에 위치되며, 후술하는 스팀생성부(도 4의 '420')에서 공급된 스팀은 유로(L)를 통해 스팀분사부(40)에 공급한다. The steam supply means is a component for preheating the wafer W by being supplied to the lower surface (the surface opposite to the pattern surface) of the wafer W. As shown in the drawing, the steam supplying unit includes a steam injecting unit 40. The steam injecting unit 40 is located in a gap between the upper surface of the spin chuck 10 and the wafer W, The steam supplied from the steam generator (420 'in FIG. 4) is supplied to the steam sprayer 40 through the flow path L.

한편, 스핀척(10)의 회전으로 IPA나 수분 등이 주변으로 비산되는 것을 방지하기 위하여 스핀척(10)은 쉴드(30)에 의해 감싸져 있다. On the other hand, the spin chuck 10 is enclosed by a shield 30 to prevent IPA, moisture, and the like from scattering to the surroundings by rotation of the spin chuck 10.

도 3을 참조하여 본 실시예(1)에 의한 스팀공급수단(400)을 구체적으로 설명한다. The steam supply means 400 according to the embodiment (1) will be described in detail with reference to Fig.

상기 스핀공급수단(400)은 순수공급부(410)와 스팀생성부(420)와 스팀분사부(40)를 포함한다. The spin supply unit 400 includes a pure water supply unit 410, a steam generator 420, and a steam sprayer 40.

상기 순수공급부(410)에서 공급된 순수는 순수 매뉴얼 밸브(411)와 순수 오토밸브(412)를 통해 스팀생성부(420)로 전달된다. 또한 순수공급부(410)와 스팀생성부(420) 사이에는 유량계(413)를 구비하여 정량공급할 수 있다. Pure water supplied from the pure water supply unit 410 is transferred to the steam generator 420 through the pure manual valve 411 and the pure water valve 412. Further, a flow meter 413 may be provided between the pure water supply unit 410 and the steam generating unit 420 to supply a predetermined amount.

이와 같이 순수가 스팀생성부(420)로 전달되고, 스팀생성부(420)는 순수를 가열하여 스팀을 생성하고, 생성된 스팀은 체크밸브(415)를 통해 스팀분사부(40)로 전달한다. The pure water is delivered to the steam generator 420 and the steam generator 420 generates pure steam to generate steam and transmits the generated steam to the steam sprayer 40 through the check valve 415 .

한편, 스팀생성부(420)에서 생성된 스팀을 스팀분사부(40)를 통해 웨이퍼(W)의 하면에 분사할 때 분사압이 낮을 수 있다. 이를 보완하기 위하여 캐리어가스를 혼합하여 공급한다. On the other hand, when the steam generated by the steam generator 420 is sprayed onto the lower surface of the wafer W through the steam sprayer 40, the injection pressure may be low. In order to compensate for this, a carrier gas is mixed and supplied.

따라서 스팀생성부(420)의 일측에는 캐리어가스 공급부(430)와, 상기 캐리어가스를 가열하는 히터(450)와, 상기 캐리어가스를 스팀분사부(40)에 혼합 분사하게 하는 체크밸브(435)를 포함한다. 상기 캐리어 가스공급부(430)와 히터(450) 사이에는 캐리어가스 매뉴얼 밸브(431)와, 캐리어가스 오토밸브(432)와, 가스 필터(433)와 유량계(434)가 구비된다. 본 실시예에서는 캐리어가스를 질소(N2)가스로 구성한다. A heater 450 for heating the carrier gas and a check valve 435 for mixing and discharging the carrier gas to the steam spraying unit 40. The check valve 435 is provided at one side of the steam generating unit 420, . A carrier gas manual valve 431, a carrier gas auto valve 432, a gas filter 433, and a flow meter 434 are provided between the carrier gas supply unit 430 and the heater 450. In this embodiment, the carrier gas is composed of nitrogen (N 2 ) gas.

도 4 및 도 5를 참조하여 본 발명에 의한 스팀생성부(420)를 설명한다. The steam generator 420 according to the present invention will be described with reference to FIGS. 4 and 5. FIG.

도시된 바와 같이, 스팀생성부(420)는 히터(422)를 구비한 몸체(421)와, 순수공급관(423)과, 보온재(424)와 커버(425)를 포함한다. The steam generating unit 420 includes a body 421 having a heater 422, a pure water supply pipe 423, a heat insulating material 424, and a cover 425.

상기 몸체(421)는 원기둥형태로 형성되는데, 히터(422)가 몸체(421)의 두께부분에 삽입되어 고르게 열전달되어 몸체(421) 전체가 일정한 온도를 유지한다. The body 421 is formed in a cylindrical shape. The heater 422 is inserted into the thickness of the body 421 and uniformly heat-transferred to maintain the entire body 421 at a constant temperature.

특히, 상기 몸체(421)의 외주면에는 나선형태의 그루브(groove, 421a)가 형성되어 있고 순수공급관()90423도 역시 나선형태로 감겨져 있다. 따라서 상기 몸체(421)를 회전하게 되면 나선형태의 순수 공급관(423)을 외주면에 형성된 그루브(421a)에 장착할 수 있게 된다. 이 상태에서 상기 히터를 작동시켜 몸체를 가열하게 되면 순수공급관(421a)에 열이 전달되어 순수 공급관(421a)내에서 흐르고 있는 순수를 가열하여 스팀을 형성할 수 있는 것이다. In particular, a spiral groove 421a is formed on the outer circumferential surface of the body 421, and a pure water supply pipe 90423 is also wound in a spiral shape. Accordingly, when the body 421 is rotated, the pure water supply pipe 423 in the form of a spiral can be mounted on the groove 421a formed on the outer circumferential surface. In this state, when the heater is operated to heat the body, heat is transmitted to the pure water supply pipe 421a, and pure water flowing in the pure water supply pipe 421a is heated to form steam.

상기 순수공급관(421a)은 일단에 순수 공급부(도 2의 '410')와 연결되어 순수가 유입되는 유입구(423a)가 형성되고, 타단은 스팀이 유출되어 스팀분사부(40)와 연결되는 유출구(423b)가 형성되어 있다. The pure water supply pipe 421a has an inlet 423a connected to the pure water supply unit 410 'in FIG. 2 at one end thereof and an outlet 423a connected to the steam injection unit 40 at the other end thereof. (Not shown).

한편, 상기 순수 공급관(423)이 감겨진 몸체(()421의 외측에는 내부가 중공된 원통형의 보온재(424)가 구비되어 열손실을 최소화할 수 있다. 상기 보온재(424)의 상부와 하부에는 각각 상부보온재(42a)와 하부보온재(424b)가 구비되어 열손실을 최소화한다. On the other hand, a cylindrical heat insulator 424 having a hollow inside is provided on the outer side of the body 421 on which the pure water supply pipe 423 is wound, so that heat loss can be minimized. The upper and lower insulating members 42a and 424b are provided to minimize heat loss.

또한 상기 보온재(442)는 내부가 중공되고 하부가 밀봉된 커버(425)에 장착된다. 상기 커버(425)는 원통형으로서 하부는 밀봉되어 있으나 상부는 개방되어 있고, 상기 커버(425)의 상부에는 상부커버(425a)로 밀봉한다. 상기 상부보온재(424a)와 상부커버(425a)에는 히터 삽입공이 형성된다. Further, the heat insulating material 442 is mounted on a cover 425 whose inside is hollow and whose bottom is sealed. The cover 425 is cylindrical and its lower portion is sealed, but the upper portion is open, and the upper portion of the cover 425 is sealed with an upper cover 425a. A heater inserting hole is formed in the upper insulating member 424a and the upper cover 425a.

이하에서는 본 발명에 의한 실시예의 작동상태를 설명한다. Hereinafter, an operation state of the embodiment according to the present invention will be described.

도 2를 참조하면, 본 발명의 첫 번째 단계에서는 웨이퍼(W)의 하부에 구비되는 스팀분사부(40)에 스팀을 공급하여 상기 웨이퍼(W)를 예열한된다. 상기 스팀은 스팀 분사부(40)를 통하여 웨이퍼(W)의 하부, 즉, 웨이퍼의 양면 중에 패턴이 형성되지 않은 면으로 공급된다. 스팀 분사부(40)에 의하여 스팀이 분사되면서 온도 센서(미도시)에 의하며 웨이퍼의 온도가 감지되면서 웨이퍼의 온도가 조절될 수 있다.Referring to FIG. 2, in the first step of the present invention, steam is supplied to the steam spraying unit 40 provided at the lower part of the wafer W to preheat the wafer W. The steam is supplied to the lower surface of the wafer W, that is, the surface of the wafer on which no pattern is formed, through the steam jetting unit 40. Steam is injected by the steam injector 40, and the temperature of the wafer is sensed by a temperature sensor (not shown) and the temperature of the wafer can be adjusted.

상기 스팀의 온도는 150~200℃인 것이 바람직하다. 스팀의 온도가 150℃에 이르지 못하면 효과적인 웨이퍼의 예열이 수행되지 않아 패턴이 무너질 가능성이 있으며, 200℃를 초과하는 경우에는, 통상적으로 불소수지로 이루어진 스핀척이 변형될 우려가 있다.The temperature of the steam is preferably 150 to 200 ° C. If the temperature of the steam does not reach 150 ° C, the wafer may not be effectively preheated and the pattern may collapse. If the temperature exceeds 200 ° C, the spin chuck made of fluororesin may be deformed.

스팀이 분사, 공급됨에 따라 웨이퍼가 예열되고, 이때, 웨이퍼는 추후 단계에서 웨이퍼의 패턴 형성 면에 공급되는 IPA의 온도와 거의 동일하거나 유사한 온도까지 예열된다. 바람직하게는 패턴 형성 면에 공급되는 IPA의 온도와 ±5℃인 온도까지 예열되어야 한다. 예를 들어, 웨이퍼의 패턴 형성 면에 공급되는 IPA는 웨이퍼의 패턴이 붕괴되는 현상을 막기 위하여 70℃ 정도로 가온된 상태로 공급되고, 이 경우, 웨이퍼는 공급되는 스팀에 의하여 65 내지 75℃의 온도로 예열되는 것이 바람직하다. 예열된 웨이퍼의 온도가 65℃ 미만인 경우에는, 패턴의 붕괴를 막기에 불충분하다. 한편, 예열된 웨이퍼의 온도가 75℃를 초과하는 경우에는, 공급되는 IPA가 공급되는 동시에 순간적으로 기화되어 워터마크(Watermark)가 발생하거나 패턴이 붕괴될 가능성이 높아지는 문제점이 있다.As the steam is injected and supplied, the wafer is preheated, and the wafer is preheated to a temperature approximately equal to or similar to the temperature of the IPA supplied to the patterned surface of the wafer at a later stage. Preferably, the temperature of the IPA supplied to the pattern forming surface should be preheated to a temperature of +/- 5 占 폚. For example, IPA supplied to the pattern forming surface of the wafer is supplied in a state of being heated to about 70 캜 so as to prevent the pattern of the wafer from collapsing. In this case, the wafer is heated at a temperature of 65 to 75 캜 . If the temperature of the preheated wafer is less than 65 캜, it is insufficient to prevent the collapse of the pattern. On the other hand, when the temperature of the preheated wafer exceeds 75 캜, there is a problem that the supplied IPA is supplied and instantaneously vaporized to cause a watermark or a pattern to collapse.

상기 예열이 완료된 다음에는 웨이퍼의 상부, 즉, 패턴 형성 면에 IPA(이소프로필알코올)를 공급하여 세척 및 건조가 수행된다. IPA는 공급원으로 공급받아 분사노즐을 통하여 웨이퍼의 패턴 형성 면으로 분사된다. 이때, 상기 IPA는 표면장력을 줄이기 위하여 가온된 상태로 공급되고, 통상적으로는 60~80℃의 온도로 공급된다.After the preheating is completed, IPA (isopropyl alcohol) is supplied to the upper part of the wafer, that is, the pattern forming surface, and washing and drying are performed. The IPA is supplied as a source and is injected through the injection nozzle onto the patterned surface of the wafer. At this time, the IPA is supplied in a warmed state in order to reduce surface tension, and is usually supplied at a temperature of 60 to 80 ° C.

상기 방법에 따라 웨이퍼가 세척 및 건조가 수행될 때에, 웨이퍼의 하부에 질소(N2) 기체를 공급하여, 스팀을 이용한 예열시 액화된 미량의 DIW를 건조하는 단계가 추가될 수 있다. 상기 질소 기체는 도시된 바와 같이 스핀척(12)의 내부에 구비된 질소 기체 공급수단(15), 또는 별도로 구비된 공급수단을 통하여 웨이퍼의 하면으로 공급된다.When the wafer is washed and dried according to the above-described method, a step of supplying nitrogen (N 2 ) gas to the lower portion of the wafer and drying the liquefied DIW at the time of preheating using steam may be added. The nitrogen gas is supplied to the lower surface of the wafer through a nitrogen gas supply unit 15 provided inside the spin chuck 12 or a separately provided supply unit as shown in the figure.

IPA의 분사는 패턴 형성 면에 공급되는 IPA의 온도저하를 유발 후 있다. 따라서, 본 발명의 바람직한 실시형태에서, IPA의 온도 저하 및 그에 따른 웨이퍼의 온도 저하를 방지하기 위하여, 상기 세척이 수행되는 동안에, 즉, 상부에 IPA 공급이 중단될 때까지, 웨이퍼의 하면이 가온상태로 유지되는 것이 바람직하다. 가온의 방법으로는 예열에 사용되는 스팀이 IPA 공급이 중단될 때까지 계속 공급되거나, 또는, 웨이퍼 중심부의 온도가 70℃에 도달하면 IPA의 공급을 개시하는 동시에 스팀 공급을 중단하고, 이후 가온된 N2를 건조가 끝날 때까지 공급하는 것도 한가지 방법일 수 있다.The injection of IPA has caused the temperature drop of IPA supplied to the pattern forming surface. Therefore, in a preferred embodiment of the present invention, in order to prevent the temperature drop of the IPA and hence the temperature decrease of the wafer, the lower surface of the wafer is heated during the cleaning, that is, State. In the heating method, the steam used for the preheating is continuously supplied until the IPA supply is stopped, or when the temperature at the center of the wafer reaches 70 DEG C, the supply of the IPA is started and the supply of steam is stopped. It is also possible to supply N 2 until the end of drying.

1: 실시예(웨이퍼 세정장치)
10: 스핀척
11: 스핀들
12: 지지대
13: 클램프
20: IPA공급수단
30: 쉴드
40: 스팀공급부
400: 스팀 공급수단
410: 순수공급부
420: 스팀생성부
421: 몸체
422: 히터
423: 순수 공급관
424: 보온재
425: 커버
430: 캐리어가스공급부
440: 스팀분사부
450: 캐리어가스 히터1: Example (wafer cleaning apparatus)
10: Spin chuck
11: Spindle
12: Support
13: Clamp
20: IPA supply means
30: Shield
40: Steam supply
400: steam supply means
410: Pure supply
420: steam generator
421: Body
422: Heater
423: Pure supply pipe
424: Insulation
425: cover
430: Carrier gas supply part
440: steam jetting section
450: Carrier gas heater

Claims (8)

웨이퍼의 패턴면에 IPA(이소프로필알코올)를 공급하여 세정하는 장치에 있어서,
상기 웨이퍼를 고정하는 스핀척;
상기 웨이퍼의 패턴면에 IPA를 공급하는 IPA공급수단; 및
상기 웨이퍼를 예열하기 위하여 상기 패턴면의 이면에 스팀을 공급하는 스팀공급수단;을 포함하는 것을 특징으로 하는 웨이퍼 세정장치.
An apparatus for cleaning by supplying IPA (isopropyl alcohol) to a pattern surface of a wafer,
A spin chuck for holding the wafer;
IPA supply means for supplying IPA to the pattern surface of the wafer; And
And steam supplying means for supplying steam to the back surface of the pattern surface to pre-heat the wafer.
제1항에 있어서,
상기 스팀공급수단은,
순수를 공급하는 순수공급부;
상기 순수를 가열하여 스팀을 생성하는 스팀생성부; 및
상기 스핀척에 고정된 웨이퍼의 하부에 스팀을 분사하는 스팀분사부;를 포함하는 것을 특징으로 하는 웨이퍼 세정장치.
The method according to claim 1,
Wherein the steam supply means comprises:
A pure water supply unit for supplying pure water;
A steam generator for heating the pure water to generate steam; And
And a steam spraying unit for spraying steam to a lower portion of the wafer fixed to the spin chuck.
제2항에 있어서,
상기 스팀생성부는,
열전도성 재질의 몸체;
상기 몸체를 가열하는 히터;
상기 몸체의 외주면에 감겨지며, 순수 또는 스팀의 유로가 되는 순수 공급관; 및
상기 몸체가 내장되는 커버;를 포함하는 것을 특징으로 하는 웨이퍼 세정장치.
3. The method of claim 2,
The steam generator comprises:
A body of thermally conductive material;
A heater for heating the body;
A pure water supply pipe which is wound on the outer peripheral surface of the body and serves as a pure water or steam flow path; And
And a cover on which the body is housed.
제3항에 있어서,
상기 몸체는 원기둥형태로 형성되는 것을 특징으로 하는 웨이퍼 세정장치.
The method of claim 3,
Wherein the body is formed in a cylindrical shape.
제4항에 있어서,
상기 몸체의 외주면에는 나선형태의 그루브가 형성되는 것을 특징으로 하는 웨이퍼 세정장치.
5. The method of claim 4,
And a spiral groove is formed on an outer circumferential surface of the body.
제5항에 있어서,
상기 순수 공급관은 상기 그루부에 장착되도록 나선형태로 형성되며, 일단은 순수가 유입되는 유입구가 형성되고, 타단은 스팀이 유출되는 유출구가 형성되는 것을 특징으로 하는 웨이퍼 세정장치.
6. The method of claim 5,
Wherein the pure water supply pipe is formed in a spiral shape so as to be mounted on the grooved portion and has an inlet port through which pure water flows and an outlet through which the steam flows out at the other end.
제3항에 있어서,
상기 커버와 몸체 사이에는 보온재가 더 구비되는 것을 특징으로 하는 웨이퍼 세정장치.
The method of claim 3,
And a heat insulating material is further provided between the cover and the body.
제2항에 있어서,
상기 스팀분사부는 상기 스팀생성부에서 생성된 스팀과 캐리어가스를 혼합하여 분사하는 것을 특징으로 하는 웨이퍼 세정장치. 3. The method of claim 2,
Wherein the steam injector mixes the steam generated by the steam generator and the carrier gas and injects the mixture.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114618821A (en) * 2021-09-27 2022-06-14 杭州大和江东新材料科技有限公司 Method for cleaning ceramic product for semiconductor atomic layer deposition equipment
KR20240033888A (en) 2022-09-06 2024-03-13 삼성중공업 주식회사 Function chock for a ship

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114618821A (en) * 2021-09-27 2022-06-14 杭州大和江东新材料科技有限公司 Method for cleaning ceramic product for semiconductor atomic layer deposition equipment
KR20240033888A (en) 2022-09-06 2024-03-13 삼성중공업 주식회사 Function chock for a ship

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