KR20170141230A - Method for measuring deposition rate and deposition rate control system - Google Patents

Method for measuring deposition rate and deposition rate control system Download PDF

Info

Publication number
KR20170141230A
KR20170141230A KR1020177034155A KR20177034155A KR20170141230A KR 20170141230 A KR20170141230 A KR 20170141230A KR 1020177034155 A KR1020177034155 A KR 1020177034155A KR 20177034155 A KR20177034155 A KR 20177034155A KR 20170141230 A KR20170141230 A KR 20170141230A
Authority
KR
South Korea
Prior art keywords
deposition rate
measurement
measuring
deposition
control system
Prior art date
Application number
KR1020177034155A
Other languages
Korean (ko)
Other versions
KR101950959B1 (en
Inventor
요제 마누엘 디이게츠-캄포
하이케 란드그라프
토마스 코흐
슈테판 반게르트
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20170141230A publication Critical patent/KR20170141230A/en
Application granted granted Critical
Publication of KR101950959B1 publication Critical patent/KR101950959B1/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B21/00—Systems involving sampling of the variable controlled
    • G05B21/02—Systems involving sampling of the variable controlled electric

Abstract

A method 100 for measuring the deposition rate of vaporized material is described. The method includes measuring 110 a deposition rate with a time interval T between a first measurement M1 and a second measurement M2 and adjusting the time interval T according to the measured deposition rate 120 ). The deposition rate control system 200 is also described. The deposition rate control system includes a deposition rate measurement assembly 210 for measuring the deposition rate of the evaporated material and a controller 220 coupled to the deposition rate measurement assembly 210 and the evaporation source 300, And to provide a signal to the deposition rate measurement assembly 210.

Description

Method for measuring deposition rate and deposition rate control system

[0001] The present disclosure relates to a method for controlling the deposition rate of evaporated material, a deposition rate control system and a source of evaporation for evaporation of the material. This disclosure is particularly directed to a method and a control system for controlling the deposition rate of vaporized organic materials.

[0002] Organic evaporators are tools for the production of organic light-emitting diodes (OLEDs). OLEDs are special types of light emitting diodes in which the light emitting layer comprises a thin film of certain organic compounds. OLEDs (organic light emitting diodes) are used in the manufacture of television screens, computer monitors, mobile phones, other hand-held devices, etc. for displaying information. OLEDs can also be used for general spatial illumination. The range of possible colors, brightness, and viewing angle with OLED displays is greater than that of conventional LCD displays, because OLED pixels emit light directly and do not carry a back light. Therefore, the energy consumption of OLED displays is significantly less than the energy consumption of conventional LCD displays. In addition, the fact that OLEDs can be fabricated on flexible substrates causes additional applications.

[0003] The functionality of the OLED depends on the coating thickness of the organic material. This thickness should be within a predetermined range. Therefore, in the manufacture of OLEDs, the deposition rate at which coating with the organic material is performed is controlled to be within a predetermined tolerance range. In other words, the deposition rate of the organic evaporator must be thoroughly controlled in the production process.

[0004] Thus, for OLED applications as well as for other evaporation processes, high accuracy of the deposition rate over a relatively long period of time is required. There are a plurality of measurement systems for measuring the deposition rate of the available evaporators. However, these measurement systems suffer from insufficient accuracy and / or insufficient stability over a desired period of time.

[0005] Accordingly, there is a continuing need to provide improved deposition rate measurement methods, deposition rate control systems, evaporators and deposition apparatuses.

[0006] In view of the above, there is provided a method for measuring the deposition rate of a vaporized material, a deposition rate control system, an evaporation source, and a deposition apparatus, in accordance with independent claims. Further advantages, features, aspects and details are apparent from the dependent claims, the description and the drawings.

[0007] According to one aspect of the present disclosure, a method is provided for measuring the deposition rate of a vaporized material. The method includes measuring the deposition rate at a time interval between the first measurement and the second measurement and adjusting the time interval according to the measured deposition rate.

[0008] According to another aspect of the present disclosure, a deposition rate control system is provided. The deposition rate control system includes a deposition rate measurement assembly for measuring the deposition rate of the evaporated material, a controller coupled to the deposition rate measurement assembly, and an evaporation source, wherein the controller is configured to provide a control signal to the deposition rate measurement assembly. In particular, the controller is configured to execute the program code, and upon execution of the program code, a method for measuring the deposition rate of the evaporated material is performed in accordance with embodiments described herein.

[0009] According to a further aspect of the present disclosure, a source of evaporation for evaporation of material is provided. The evaporation source is the evaporation furnace - the evaporation furnace is configured to evaporate the material; The distribution pipe-distribution pipe having one or more outlets provided along the length of the distribution pipe to provide vaporized material to the substrate at a deposition rate, the distribution pipe being in fluid communication with the evaporation crucible; And a deposition rate control system according to embodiments described herein.

[0010] According to yet another aspect of the present disclosure, there is provided a deposition apparatus for applying a material to a substrate in a vacuum chamber at a uniform deposition rate. The deposition apparatus includes at least one evaporation source in accordance with the embodiments described herein.

[0011] The present disclosure is also directed to an apparatus for performing the disclosed methods, including apparatus portions for performing the methods. The method may be performed by hardware components, by a computer programmed by appropriate software, by any combination of the two, or in any other manner. In addition, the present disclosure also relates to methods of operation of the apparatus described. This includes a method for performing all the respective functions of the device.

BRIEF DESCRIPTION OF THE DRAWINGS [0012] A more particular description, as summarized above, may be made with reference to the embodiments, in order that the recited features of the present disclosure described herein may be understood in detail. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings relate to embodiments of the present disclosure and are described below:
1 shows a block diagram illustrating a method for measuring the deposition rate of a vaporized material, in accordance with embodiments described herein;
Figure 2 shows a schematic diagram of a deposition rate control system according to embodiments described herein;
Figure 3 shows a schematic diagram of a deposition rate control system according to embodiments described herein;
4 shows a schematic diagram of a deposition rate control system according to embodiments described herein;
Figure 5 shows a schematic diagram for measuring the deposition rate according to embodiments of the method for measuring the deposition rate, as described herein;
Figures 6A and 6B respectively show a block diagram illustrating embodiments of a method for measuring the deposition rate of a vaporized material, as described herein;
Figure 7a shows a schematic view of a measurement assembly in a first state, according to embodiments described herein;
Figure 7b shows a schematic side view of a measurement assembly in a second state, in accordance with embodiments described herein;
Figures 8A and 8B show schematic side views of an evaporation source according to embodiments described herein; And
Figure 9 shows a schematic plan view of a deposition apparatus for applying material to a substrate in a vacuum chamber, in accordance with embodiments described herein.

[0013] Reference will now be made in detail to various embodiments of the present disclosure, and one or more examples of various embodiments are illustrated in the drawings. In the following description of the drawings, like reference numerals refer to like components. In the following, only the differences for the individual embodiments are described. Each example is provided in the description of the present disclosure and is not intended as a limitation of the present disclosure. Additionally, features that are illustrated or described as part of one embodiment may be used with other embodiments or with other embodiments to produce yet another additional embodiment. The description is intended to include such variations and modifications.

[0014] In the present disclosure, the expression "oscillation crystal for measuring the deposition rate" refers to the mass of material deposited on the oscillation crystal per unit area by measuring the frequency change of an oscillation crystal resonator Can be understood as oscillation crystals for measuring fluctuations. In particular, in this disclosure, an oscillating crystal can be understood as a quartz crystal resonator. More specifically, the "oscillation crystal for measuring the deposition rate" can be understood as a quartz crystal microbalance (QCM).

[0015] In this disclosure, the expression "accuracy of deposition rate" relates to the actual deposition rate from the preselected target deposition rate, e.g., the deviation of the measured deposition rate. For example, the smaller the deviation of the measured actual deposition rate from the preselected target deposition rate, the higher the accuracy of the deposition rate.

[0016] 1, a method 100 for measuring the rate of deposition of a vaporized material, according to embodiments described herein, includes depositing a layer of material (e.g., (110) of measuring the deposition rate, and adjusting (120) the time interval according to the measured deposition rate. In particular, the dependence of the deposition rate measured may be a function of the deposition rate. For example, the first and / or second measurements may be performed for 5 minutes or less, especially 3 minutes or less, more particularly 1 minute or less. According to embodiments that may be combined with other embodiments described herein, the time interval T between the first measurement and the second measurement may be 50 minutes or less, especially 35 minutes or less, more particularly 20 minutes Or less. Thus, by adjusting the time interval between two measurements according to a function of the deposition rate, the measurement accuracy of the deposition rate can be increased. In particular, by adjusting the time interval between two measurements according to the function of the deposition rate, the lifetime of the deposition measurement device can be extended. In particular, the exposure of the measuring device for measuring the deposition rate of the vaporized material to the vaporized material can be minimized, which may be beneficial for the overall life of the measuring device.

[0017]  According to embodiments that may be combined with other embodiments described herein, during the initial adjustment of the preselected target deposition rate, the time interval [Delta] T between the first measurement and the second measurement may be adjusted to a preselected target deposition rate May be shorter compared to the time interval? T between the first measurement and the second measurement at the time of arrival. For example, during the initial adjustment of the preselected target deposition rate, the time interval T between the first measurement and the second measurement may be 10 minutes or less, especially 5 minutes or less, more particularly 3 minutes or less. When the preselected target deposition rate is reached, the time interval T between the first measurement and the second measurement is set to a lower limit of 10 minutes, in particular a lower limit of 20 minutes, more particularly a lower limit of 30 minutes and an upper limit of 35 minutes, Min, more particularly an upper limit of 50 minutes. In particular, if the preselected target deposition rate is reached, the time interval T between the first measurement and the second measurement may be 40 minutes.

[0018] According to embodiments that may be combined with other embodiments described herein, the measured deposition rate may be a function of the slope of the deposition rate, a Boolean decision as to whether the deposition rate is within a predetermined range, A polynomial function of the difference between the deposited deposition rate and the nominal / set value of the predetermined deposition rate, and the oscillation function of the measured deposition rate. Thus, by adjusting the time interval [Delta] T between the two measurements based on a function of the deposition rate, the measurement accuracy of the deposition rate can be increased. In addition, the exposure of the measuring device for measuring the deposition rate of the evaporated material to the evaporated material can be minimized, which may be beneficial for the overall life of the measuring device.

[0019] According to embodiments which may be combined with other embodiments described herein, the time interval between the first measurement and the second measurement may be adjusted according to the deviation of the measured slope of the deposition rate from the preselected slope of the deposition rate . In particular, when a deviation of the measured slope from a preselected slope of the deposition rate of less than 5%, especially less than 3%, more particularly less than 1.5%, for example 1% or less, is detected, Can be increased. Thus, if a deviation of the measured slope from a preselected slope of the deposition rate of greater than 5%, especially greater than 3%, more particularly greater than 1%, such as 1.5%, is detected, the time interval between the first and second measurements Can be reduced.

[0020] According to embodiments that may be combined with other embodiments described herein, the time interval between the first measurement and the second measurement may be adjusted based on the Boolean determination. For example, the time interval between the first measurement and the second measurement may be reduced if the deviation of the measured deposition rate from the preselected target deposition rate is above the preselected deposition rate upper limit or below the preselected deposition rate lower limit. For example, the pre-selected deposition rate upper limit may be + 3% or less, especially + 2% or less, more particularly + 1% or less of the target deposition rate 190. In particular, the preselected deposition rate upper limit may be 1.5%. The deposition rate lower limit may be -3% or less (e.g., -2.5%), especially -2% or less (e.g., -1.5%), more particularly -1% or less of the target deposition rate 190 , 0.75%). In particular, the preselected deposition rate lower limit may be -1.5%.

[0021] According to embodiments which may be combined with the other embodiments described herein, the time interval between the first measurement and the second measurement is determined by a polynomial function of the difference between the measured deposition rate and the nominal / set value of the preselected deposition rate As shown in FIG. For example, if a deviation of a polynomial function for a measured deposition rate from a preselected target deposition rate of less than 5%, especially less than 3% (e.g., 1.5% or less), more particularly less than 1% The time interval between the first measurement and the second measurement can be increased. Thus, if a deviation of the polynomial function for a measured deposition rate from a preselected target deposition rate of greater than 5%, especially greater than 3%, more particularly greater than 1% (e.g., 1.5% or greater) The time interval between the first measurement and the second measurement can be reduced.

[0022] According to embodiments that may be combined with other embodiments described herein, the time interval between the first measurement and the second measurement may be adjusted based on the oscillation function of the measured deposition rate. For example, if a deviation of the oscillation function for a measured deposition rate from a preselected target deposition rate of less than 5%, especially less than 3% (e.g., 1.5% or less), more particularly less than 1% The time interval between the first measurement and the second measurement can be increased. Thus, if a deviation of the oscillation function for a measured deposition rate from a preselected target deposition rate of greater than 5%, especially greater than 3%, more particularly greater than 1% (e.g., 1.5% or greater) is detected, The time interval between the first measurement and the second measurement can be reduced.

[0023] FIG. 2 shows a schematic diagram of a deposition rate control system 200 according to embodiments described herein. The deposition rate control system 200 includes a deposition rate measurement assembly 210 for measuring the deposition rate of the evaporated material and a controller 220 connected to the deposition rate measurement assembly 210 and the evaporation source 300. In accordance with the embodiments described herein, the controller 220 may be configured to provide a control signal to the deposition rate measurement assembly 210. In particular, the controller 220 may be configured to execute the program code, and upon execution of the program code, a method for measuring the deposition rate in accordance with the embodiments described herein is performed.

[0024] For example, the control signal provided from the controller 220 to the deposition rate measurement assembly 210 may be for adjusting the time interval between the first measurement and the second measurement of the deposition rate. In particular, depending on the deposition rate measured, the time interval between the first measurement and the second measurement can be increased or decreased. For example, if the measured deposition rate is determined to meet a preselected criterion, such as a stability criterion, the time interval between the first measurement and the second measurement may be increased. Thus, if it is determined that the measured deposition rate does not meet a preselected criterion, such as a stability criterion, the time interval between the first measurement and the second measurement may be increased.

[0025] 2, the deposition rate measurement assembly 210 may measure the actual deposition rate 199, according to embodiments that may be combined with other embodiments described herein. The measured actual deposition rate 199 data is transmitted from the deposition rate measurement assembly 210 to the controller 220. In accordance with the measured actual deposition rate 199, the controller 220 controls the first control signal 125 for controlling the evaporation source 300 to adjust the deposition rate, e.g., heating the heating elements provided to the deposition source And / or a signal for cooling the cooling-elements provided to the deposition source. According to embodiments that may be combined with other embodiments described herein, controller 220 may include a closed-loop control (PID) controller including at least one proportional-integral-derivative (PID) controller for controlling the deposition rate -loop control). Also, in accordance with the measured actual deposition rate 199, the controller 220 may determine the deposition rate between two measurements of the deposition rate, e. G., The first measurement M1 and the second measurement < A second control signal 121 for adjusting the time interval [Delta] T between the deposition rate measurement assembly M2 and the deposition rate measurement assembly 210 may be provided. Thus, by providing a deposition rate control system comprising a controller configured to provide a control signal to a deposition rate measurement assembly, the exposure of the measurement device for measuring the deposition rate of the vaporized material to the vaporized material is minimized . This may be beneficial for the overall life of the measuring device.

[0026] 3, preselected values for the deposition rate (dm / dt) may be used to control the deposition rate control system 200. For example, as shown in FIG. 3, ≪ / RTI > Particularly, the target deposition rate 190, the deposition rate upper limit 191, and the deposition rate lower limit 192 may be selected. 3, if the measured actual deposition rate 199 is within the deposition rate upper limit 191 and the deposition rate lower limit 192, then the actual deposition rate 199 measured is the deposition rate of the selected deposition Rate accuracy criterion can be determined. According to embodiments that may be combined with other embodiments described herein, the deposition rate upper limit 191 may be less than + 3% of the target deposition rate 190, particularly less than +2% of the target deposition rate 190 % Or less (e.g. 1.5% or less), more particularly + 1% or less of the target deposition rate 190. The deposition rate lower limit 192 is -3% or less (e.g., -2.5%) of the target deposition rate 190, especially -2% or less (e.g., -1.5%) of the target deposition rate 190, And more particularly -1% or less (e.g., -0.75%) of the target deposition rate 190.

[0027] 4, by way of embodiments that may be combined with other embodiments described herein, control signals provided by the controller 220 to the deposition rate measurement assembly 210, such as the second The control signal 121 may be for adjusting the time interval T between the first measurement M1 of the deposition rate and the second measurement M2. As exemplarily shown in FIG. 4, the first measurement M1 may be performed during a first time period. The deposition rate measurement data of the actual deposition rate 199 may be transmitted from the deposition rate measurement assembly 210 to the controller 220. Depending on the actual deposition rate 199 measured in the first measurement M1, the time interval? T between the first measurement M1 and the subsequent measurement, e.g. the second measurement M2, can be determined. For example, if it is determined that the measured deposition rate meets the selected deposition rate accuracy criterion, the time interval? T between the first measurement M1 and the subsequent measurement, such as the second measurement M2, may be increased. For example, the time interval [Delta] T between the first measurement M1 and the subsequent measurement can be increased in comparison to a preset value of the time interval between the two measurements, especially two subsequent measurements.

[0028] Thus, according to embodiments that may be combined with other embodiments described herein, the time interval between the second measurement M2 and the subsequent measurement, e.g., the third measurement, Can be determined according to the deposition rate (199). For example, if it is determined that the measured deposition rate of the second measurement M2 is more accurate than the measured deposition rate of the first measurement M1, then the time interval between the second measurement M2 and the subsequent measurement may be increased . Conversely, if it is determined that the measured deposition rate of the second measurement M2 is less accurate than the measured deposition rate of the first measurement M1, then the time interval between the second measurement M2 and the subsequent measurement may be reduced have.

[0029]  In FIG. 5, an exemplary schematic diagram for measuring the deposition rate using a method for measuring the deposition rate in accordance with the embodiments described herein is shown. Specifically, in FIG. 5, an exemplary actual deposition rate 199 [dm / dt] is plotted according to time t. 5 also shows exemplary target deposition rates 190, exemplary deposition rate upper limit 191, and exemplary deposition rate lower limit 192. [ As illustrated by way of example in FIG. 5, the exemplary actual deposition rate 199 may vary with time t. In an ideal case, the actual deposition rate 199 is constant over time and corresponds to the pre-selected target deposition rate 190. However, in practice, the actual deposition rate 199 can oscillate near the preselected target deposition rate 190, as illustrated by way of example in FIG. Thus, the time interval between the first measurement and the second measurement can be adjusted according to the measured deposition rate.

[0030] For example, the measured deposition rate may be characterized for a preselected criterion, such as a stability criterion, and the time interval between the measurement and the subsequent measurement for which the preselected criterion should be evaluated may be adjusted according to the result of the evaluation. For example, if the measured actual deposition rate 199 of the measurement is estimated to be more accurate than the measured actual deposition rate 199 of the previous measurement, the time interval at which the subsequent measurement is performed can be increased. In particular, as exemplarily shown in Fig. 5, the measured deposition rate of the second measurement M2 is determined to be more accurate as compared to the first measurement M1, so that a subsequent third measurement may be made at a first time interval Gt; T2) < / RTI > that is increased compared to the first time interval < RTI ID = 0.0 > Thus, as illustrated illustratively in FIG. 5, if the measured actual deposition rate 199 of the measurement is less accurate than in the previous measurement, the time interval over which subsequent measurements are performed can be reduced. In particular, as illustrated in FIG. 5, the measured deposition rate of the fourth measurement M4 is determined to be less accurate compared to the third measurement M3, so that the subsequent fifth measurement M5 is the third Is performed with a reduced fourth time interval T4 compared to the time interval T3.

[0031] According to embodiments of the method 100 for measuring the deposition rate of a vaporized material, which may be combined with other embodiments described herein, the method 100 may include, by way of example, As shown, the method may include, between the first measurement and the second measurement, shielding the deposition rate measurement device from the evaporated material (130). For example, the shielding step 130 may include a deposition rate measurement device 211 and a measurement outlet (not shown) for providing the vaporized material to the deposition rate measurement device 211, as exemplarily shown in FIGS. 7A and 7B 230 to move the shutter 213. Thus, the deposition rate measuring device can be protected from evaporated material between measurements, which can be advantageous for the overall lifetime of the deposition rate measuring device.

[0032] According to embodiments of the method 100 for measuring the deposition rate of a vaporized material, which may be combined with other embodiments described herein, the method 100 further comprises, between the first measurement and the second measurement, And cleaning 140 the deposition rate measurement device 211 of the deposited material. In particular, the cleaning step 140 may include evaporating the deposited material on the deposition rate measuring device 211. [ For example, the step of evaporating the material deposited on the deposition rate measuring device 211 can be performed by heating the deposition rate measuring device. Thus, by cleaning the deposition rate measurement device between measurements, the overall lifetime of the deposition rate measurement device can be extended.

[0033] 7A and 7B, schematic views of a measurement assembly of a deposition rate control system are shown in accordance with the embodiments described herein. In particular, in accordance with embodiments described herein, a deposition rate measurement assembly 210 for measuring the deposition rate of vaporized material includes a deposition rate measurement device 211 (e.g., a deposition rate measurement device) including oscillation crystals 212 for measuring the deposition rate ). 7A and 7B, the deposition rate measuring device 211 may include a holder 250 through which the oscillating crystals 212 may be arranged. The holder 250 can include a measurement aperture 122 that can be configured and arranged such that the evaporated material can be deposited on the oscillating crystal 212 for measuring the deposition rate of the evaporated material.

[0034] According to embodiments that may be combined with other embodiments described herein, a deposition rate measurement assembly 210 may be used to provide vaporized material to the deposition rate measurement device 211, and in particular to the oscillation crystal 212 And a shutter 213 for shutting off the evaporated material provided from the measurement outlet 230. Referring to Figures 7A and 7B illustratively, the shutter 213 may be configured to be movable, e.g., linearly, from a first state of the shutter to a second state of the shutter, i.e., Possible shutter. Alternatively, the shutter may be configured to pivot from a first state to a second state. 7A, the first state of the shutter is such that the shutter 213 is in an open state (not shown) that does not block the measurement outlet 230 for providing the vaporized material to the oscillating crystal 212. For example, Lt; / RTI > 7B, the second state of the shutter 213 is such that the shutter 213 is closed so that the oscillating crystal 212 is protected from evaporated material provided through the measurement outlet 230 The measurement outlet 230 may be blocked.

[0035] By providing a shutter in the measurement assembly, the measuring device, and in particular the oscillating crystal, can be protected from evaporated material between deposition rate measurements, which can be advantageous for the overall lifetime of the deposition rate measuring device. Also, by shielding the deposition rate measuring device from the vaporized material using a shutter between the first measurement and the second measurement, the adverse effects of heat provided by the vaporized material on the measurement device can be reduced or even eliminated. For example, by shielding the deposition rate measuring device using a shutter in accordance with the embodiments described herein, the quality, accuracy, and stability of the deposition rate measuring device can be increased.

[0036] 7B, according to embodiments that may be combined with other embodiments described herein, the shutter 213 may include a thermal protective shield (not shown) for protecting the oscillating crystal 212 from evaporated material 216). 7B, the thermal protection shield 216 may be arranged on the side of the shutter 213 facing the measurement outlet 230. As shown in FIG. In particular, the thermal protection shield 216 may be configured to reflect the thermal energy provided by the evaporated material provided through the measurement outlet 230. According to embodiments that may be combined with other embodiments described herein, the thermal protection shield 216 may be a plate, e.g., sheet metal. Alternatively, the thermal protection shield 216 may comprise two or more plates, such as sheet metal, that may be spaced apart from each other by a gap of, for example, 0.1 mm or more. For example, the sheet metal may have a thickness of from 0.1 mm to 3.0 mm. In particular, the thermal protection shield is made of at least one material selected from the group consisting of iron or non-ferrous materials such as copper (Cu), aluminum (Al), copper alloys, aluminum alloys, brass, iron, titanium It includes one material.

[0037] Thus, a measurement assembly comprising a thermal protective shield according to embodiments described herein may be advantageous to protect the oscillating crystal from the temperature, e.g., heat, of the evaporated material, especially when the shutter is closed. In particular, if the deposition rate measurement device is shielded from the vaporized material between two measurements, the deposition rate measurement device can be cooled. Thus, the overall lifetime of the deposition rate measuring device can be extended.

[0038] According to embodiments that may be combined with other embodiments described herein, the deposition rate measurement assembly 210 may include a deposition rate measurement device 211, as exemplarily shown in FIGS. 7A and 7B, And at least one heating element 214 for heating to a temperature at which the material deposited on the deposition rate measuring device 211 is vaporized. In particular, the heating element 214 may be arranged in the holder 250, for example, next to or near the oscillating crystal 212. The heating element 214 may be configured to heat the oscillating crystal and / or the holder. Thus, the deposition rate measurement device can be cleaned in-situ between the two measurements. This may be beneficial for the overall lifetime of the deposition rate measurement device and the achievable measurement accuracy.

[0039] According to embodiments that may be combined with other embodiments described herein, the deposition rate measurement assembly 210 may include a heat exchanger 232. In particular, the heat exchanger may be arranged in the holder, e.g., next to or near the oscillating crystal and / or next to or near the heating element 214. The heat exchanger 232 may be configured to exchange heat with the oscillating crystal and / or the holder 120 and / or the heating element 214. For example, the heat exchanger may include tubes and a cooling fluid may be provided through the tubes. The cooling fluid may be a liquid, such as water, or a gas, such as air. Additionally or alternatively, the heat exchanger may include one or more Peltier elements (s). Thus, by providing the heat exchanger 232 to the measurement assembly, the adverse effects of high temperature on the quality, accuracy, and stability of the deposition rate measurement can be reduced or even eliminated. In particular, providing a heat exchanger in a measurement assembly may be advantageous, for example, to cool the measuring device after the measuring device has been cleaned by heating to evaporate the material deposited from the deposition rate measuring device, between the first and second measurements Can be advantageous.

[0040]  7b, the deposition rate measurement assembly 210 may be used to determine the temperature of the deposition rate measurement device 211, in particular, the temperature of the oscillation crystal (i. E. 212) and / or a temperature sensor (217) for measuring the temperature of the holder (250). By providing a temperature sensor 217 to the deposition rate measurement assembly 210, information about the temperature of the measurement assembly can be obtained such that a threshold temperature that tends to be measured incorrectly by the oscillation crystal can be detected. Therefore, when the critical temperature of the deposition rate measuring device 211 is detected by the temperature sensor, an appropriate reaction can be started, for example, cooling can be started by using a heat exchanger.

[0041] According to embodiments that may be combined with other embodiments described herein, the deposition rate measurement assembly 210 may include a temperature control system 210 for controlling the temperature of the oscillating crystal 212 and / . ≪ / RTI > In particular, the temperature control system may include one or more of a temperature sensor 217, a heat exchanger 232, a heating element 214, and a sensor controller 233. Sensor controller 233 may be coupled to temperature sensor 217 to receive data measured by temperature sensor 217, The sensor controller 233 may also be connected to the heat exchanger 232 to control the temperature of the holder 250 and / or the oscillating crystal 212. The sensor controller 233 can also be connected to the heating element 214 to control the heating temperature of the holder 250 and / or the oscillating crystal 212, for example during a cleaning as described herein.

[0042] 8A and 8B show schematic side views of an evaporation source 300 in accordance with embodiments as described herein. According to embodiments, the evaporation source 300 comprises an evaporation crucible 310, and the evaporation crucible is configured to evaporate a material, such as an organic material. The evaporation source 300 also includes a dispensing pipe 320 having one or more outlets 322 provided along the length of the dispensing pipe for providing the material to be vaporized, . According to embodiments, the distribution pipe 320 is in fluid communication with the evaporation crucible 310, for example, via a vapor conduit 332, as illustrated by way of example in FIG. 8B. Steam conduit 332 may be provided to the distribution pipe 320 at a central portion of the distribution pipe, or at another position between the lower end of the distribution pipe and the upper end of the distribution pipe. The evaporation source 300 in accordance with the embodiments described herein also includes a deposition rate measurement assembly 210 in accordance with the embodiments described herein. 8A and 8B, according to embodiments that may be combined with other embodiments described herein, an evaporation source 300 may include a deposition rate measurement assembly 210 and an evaporation source (not shown) 300 coupled to the controller 220. As described herein, the controller 220 may provide the first control signal 125 to the evaporation source 300 to adjust the deposition rate. The controller may also provide a second control signal 121 to the deposition rate measurement assembly 210 to adjust the time interval [Delta] T between the two measurements. Thus, an evaporation source 300 is provided that can be measured and controlled with high accuracy in deposition rates.

[0043] According to embodiments that may be combined with other embodiments described herein, the distribution pipe 320 may be a elongated cube that includes a heating element 315, as illustrated by example in Figure 8A . The evaporation crucible 310 may be a reservoir for the material to be evaporated, e.g., an organic material, using the heating unit 325. For example, a heating unit 325 may be provided in the enclosure of the evaporation crucible 310. According to embodiments that may be combined with other embodiments described herein, the distribution pipe 320 may provide a line source. For example, as illustrated in FIG. 8B, a plurality of outlets 322, such as nozzles, may be arranged along at least one line. According to an alternative embodiment (not shown), one elongated opening, e.g. a slit, extending along at least one line may be provided. According to some embodiments that may be combined with other embodiments described herein, the line source may extend essentially vertically.

[0044] According to some embodiments, which may be combined with other embodiments described herein, the length of the distribution pipe 320 may correspond to the height of the substrate on which the material is to be deposited within the deposition apparatus. Alternatively, the length of the distribution pipe 320 may be longer than the height of the substrate on which the material is to be deposited, e.g., at least 10% or even 20%. Thus, uniform deposition at the upper end of the substrate and / or at the lower end of the substrate can be provided. For example, the length of the distribution pipe 320 may be 1.3 m or more, such as 2.5 m or more.

[0045] According to embodiments that may be combined with other embodiments described herein, the evaporation crucible 310 may be provided at the lower end of the distribution pipe 320, as exemplarily shown in FIG. 8A. Materials, such as organic materials, can be evaporated in the evaporation crucible 310. The vaporized material may enter the dispensing pipe 320 at the lowermost portion of the dispensing pipe and may be sideways essentially through the plurality of outlets 322 of the dispensing pipe 320, Can be informed. 8b, the deposition rate measurement assembly 210 according to the embodiments described herein may be provided at an upper portion of the distribution pipe 320, for example, at the upper end of the distribution pipe 320. As shown in FIG.

[0046] 8B, according to embodiments that may be combined with other embodiments described herein, the measurement outlet 230 is connected to a wall of the distribution pipe 320, such as the back side 224A of the distribution pipe As shown in FIG. Alternatively, the measurement outlet 230 may be provided in the top wall 224C of the distribution pipe 320. [ The evaporated material may be provided to the deposition rate measurement assembly 210 from the interior of the distribution pipe 320 through the measurement outlet 230, as illustrated by arrow 231 in FIG. 8B. According to embodiments that may be combined with other embodiments described herein, the measurement outlet 230 may have an opening of 0.5 mm to 4 mm. The measurement outlet 230 may include a nozzle. For example, the nozzle may include an adjustable aperture for adjusting the flow of evaporated material provided to the deposition rate measurement assembly 210. Particularly, the nozzle has a lower limit of 1/70 of the total flow provided by the evaporation source, in particular a lower limit of 1/60 of the total flow provided by the evaporation source, more particularly 1/50 of the total flow provided by the evaporation source The upper limit of 1/40 of the total flow provided by the evaporation source, in particular the upper limit of 1/30 of the total flow provided by the evaporation source, more particularly the upper limit of 1/25 of the total flow provided by the evaporation source RTI ID = 0.0 > a < / RTI > For example, the nozzle may be configured to provide a measured flow of 1/54 of the total flow provided by the evaporation source.

[0047] Figure 9 shows a schematic plan view of a deposition apparatus 400 for applying material to a substrate 444 in a vacuum chamber 410 in accordance with embodiments as described herein. According to embodiments that may be combined with other embodiments described herein, an evaporation source 300 may be provided within the vacuum chamber 410, e.g., on a track, such as a linear guide 420 or on a looped track have. The track or linear guide 420 may be configured for translational movement of the evaporation source 300. Thus, in accordance with embodiments that may be combined with other embodiments described herein, a drive for translational motion may be provided to the evaporation source (not shown) in the track and / or linear guide 420 in the vacuum chamber < (Not shown). A first valve 405, e.g., a gate valve, may be provided to enable a vacuum seal to an adjacent vacuum chamber (not shown in FIG. 9). The first valve may be open for transfer of the substrate 444 or the mask 432 into or out of the vacuum chamber 410.

[0048] According to some embodiments, which may be combined with other embodiments described herein, a further vacuum chamber, such as a maintenance vacuum chamber 411, as exemplarily shown in Figure 9, May be provided near the vacuum chamber 410. Accordingly, the vacuum chamber 410 and the maintenance vacuum chamber 411 can be connected using the second valve 407. [ The second valve 407 may be configured to open and close a vacuum seal between the vacuum chamber 410 and the maintenance vacuum chamber 411. While the second valve 407 is in the open state, the evaporation source 300 can be transferred to the maintenance vacuum chamber 411. Thereafter, to provide a vacuum seal between the vacuum chamber 410 and the maintenance vacuum chamber 411, the second valve 407 may be closed. When the second valve 407 is closed the maintenance vacuum chamber 411 may be vented and may be opened for maintenance of the evaporation source 300 without breaking the vacuum in the vacuum chamber 410. [ .

[0049] As illustrated illustratively in FIG. 9, the two substrates may be supported on respective transfer tracks within the vacuum chamber 410. Also, two tracks may be provided for providing masks thereon. Thus, during the coating, the substrate 444 may be masked by respective masks. For example, a mask may be provided in the mask frame 431 for holding the mask 432 at a predetermined position.

[0050] According to some embodiments that may be combined with other embodiments described herein, the substrate 444 may be supported by a substrate support 426, which may be connected to the alignment unit 412. The alignment unit 412 may adjust the position of the substrate 444 with respect to the mask 432. As illustrated illustratively in FIG. 9, the substrate support 426 may be coupled to the alignment unit 412. Thus, the substrate can be moved relative to the mask 432 to provide proper alignment between the substrate and the mask during deposition of materials that may be advantageous for manufacturing high quality displays. Alternatively or additionally, a mask frame 431, which holds the mask 432 and / or the mask 432, may be connected to the alignment unit 412. Thus, the mask 432 can be positioned relative to the substrate 444, or both the mask 432 and the substrate 444 can be positioned relative to each other.

[0051] 9, the linear guide 420 may provide a direction of translational movement of the evaporation source 300. As shown in FIG. On either side of the evaporation source 300, a mask 432 may be provided. The masks may extend essentially parallel to the direction of translation. In addition, the substrates on opposite sides of the evaporation source 300 may also extend essentially parallel to the direction of translational motion. The evaporation source 300 provided in the vacuum chamber 410 of the deposition apparatus 400 includes a support 302 that can be configured for translational movement along the linear guide 420, . For example, the support 302 may support two evaporation crucibles and two distribution pipes 320 provided on the evaporation crucible 310. Thus, the vapor produced in the evaporation crucible can move upwards and out of one or more outlets of the distribution pipe.

[0052] As illustrated illustratively in FIG. 9, a deposition source having two or more distribution pipes may be provided. For example, two or more distribution pipes may be designed in a triangular shape. The triangular shape of the distribution pipe 320 may be advantageous if two or more distribution pipes are arranged side by side. In particular, the triangular shape of the distribution pipe 320 makes it possible to bring the outlets for the evaporated material of neighboring distribution pipes as close to one another as possible. This makes it possible to achieve an improved mixing of different materials from different distribution pipes, for example in the case of simultaneous evaporation of two, three or even more different materials.

[0053] Thus, methods for measuring the rate of deposition of a material to be vaporized, a deposition rate control system, an evaporation source, and a deposition apparatus, in accordance with embodiments described herein, provide improved deposition rate measurement and / or improved deposition rate control to provide. This can be advantageous for manufacturing high quality displays, such as high quality OLED manufacturing.

Claims (15)

A method (100) for measuring a deposition rate of a vaporized material,
Measuring (110) the deposition rate at a time interval between the first measurement and the second measurement, and
And adjusting (120) the time interval according to the measured deposition rate.
A method (100) for measuring the deposition rate of a vaporized material. The method according to claim 1,
Wherein the dependence of the measured deposition rate is a function of the deposition rate,
A method (100) for measuring the deposition rate of a vaporized material. 3. The method according to claim 1 or 2,
Wherein the function of the measured deposition rate is determined by a slope of the deposition rate, a Boolean decision that the deposition rate is within a predetermined range, a difference between the measured deposition rate and a nominal / set value of a predetermined deposition rate And an oscillation function of the measured deposition rate,
A method (100) for measuring the deposition rate of a vaporized material. 4. The method according to any one of claims 1 to 3,
(130) shielding the deposition rate measurement device from the vaporized material, between the first measurement and the second measurement.
A method (100) for measuring the deposition rate of a vaporized material. 5. The method of claim 4,
The shielding step 130 comprises moving the shutter 213 between the deposition rate measurement device 211 and the measurement outlet 230 for providing vaporized material to the deposition rate measurement device 211 ,
A method (100) for measuring the deposition rate of a vaporized material. 6. The method according to any one of claims 1 to 5,
Further comprising: (140) cleaning the deposition rate measurement device (211) from the deposited material between the first measurement and the second measurement,
A method (100) for measuring the deposition rate of a vaporized material. The method according to claim 6,
The cleaning step (140) comprises evaporating the deposited material from the deposition rate measuring device (211).
A method (100) for measuring the deposition rate of a vaporized material. 8. The method of claim 7,
The step of evaporating the deposited material from the deposition rate measuring device (211) is performed by heating the deposition rate measuring device.
A method (100) for measuring the deposition rate of a vaporized material. As the deposition rate control system (200)
A deposition rate measurement assembly 210 for measuring the deposition rate of the evaporated material, and
And a controller (220) coupled to the deposition rate measurement assembly (210) and the evaporation source (300)
The controller is configured to provide a control signal to the deposition rate measurement assembly 210,
Wherein the controller is configured to execute the program code and wherein, when executing the program code, the method according to any one of claims 1 to 8 is performed,
A deposition rate control system (200). 10. The method of claim 9,
The controller (220) includes closed loop control including at least one proportional-integral-derivative (PID) controller for controlling the deposition rate.
A deposition rate control system (200). 11. The method according to claim 9 or 10,
The deposition rate measurement assembly (210) includes a deposition rate measurement device (211) including an oscillation crystal (212) for measuring the deposition rate.
A deposition rate control system (200). 12. The method according to any one of claims 9 to 11,
The deposition rate measurement assembly 210 includes a shutter for shielding the deposition rate measurement device 211 from vaporized material provided from a measurement outlet 230 for providing vaporized material to the deposition rate measurement device 211 213, in particular a movable shutter,
A deposition rate control system (200). 13. The method according to any one of claims 9 to 12,
The deposition rate measurement assembly 210 includes at least one heating element 214 for heating the deposition rate measurement device 211 to a temperature at which the material deposited on the deposition rate measurement device 211 is vaporized doing,
A deposition rate control system (200). As a source of evaporation (300) for evaporation of material,
Evaporative Crucible 310 - The evaporative crucible is configured to evaporate the material;
Dispense Pipe 320: The dispense pipe 320 has one or more outlets provided along the length of the dispense pipe to provide vaporized material to the substrate at a deposition rate, A fluid communication with the evaporation crucible (310); And
A deposition rate control system (200) according to any one of claims 9 to 13,
Evaporation source (300) for evaporation of material. A deposition apparatus (400) for applying a material to a substrate (444) in a vacuum chamber (410) at a deposition rate,
An apparatus (100) comprising at least one evaporation source (300) according to claim 14,
A deposition apparatus (400).
KR1020177034155A 2015-06-17 2015-06-17 Method for measuring deposition rate and deposition rate control system KR101950959B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2015/063636 WO2016202387A1 (en) 2015-06-17 2015-06-17 Method for measuring a deposition rate and deposition rate control system

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187028708A Division KR20180112123A (en) 2015-06-17 2015-06-17 Method for measuring a deposition rate and deposition rate control system

Publications (2)

Publication Number Publication Date
KR20170141230A true KR20170141230A (en) 2017-12-22
KR101950959B1 KR101950959B1 (en) 2019-02-21

Family

ID=53489935

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020177034155A KR101950959B1 (en) 2015-06-17 2015-06-17 Method for measuring deposition rate and deposition rate control system
KR1020187028708A KR20180112123A (en) 2015-06-17 2015-06-17 Method for measuring a deposition rate and deposition rate control system

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020187028708A KR20180112123A (en) 2015-06-17 2015-06-17 Method for measuring a deposition rate and deposition rate control system

Country Status (5)

Country Link
JP (1) JP6411675B2 (en)
KR (2) KR101950959B1 (en)
CN (1) CN107709604A (en)
TW (1) TWI612167B (en)
WO (1) WO2016202387A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112912533B (en) * 2018-11-28 2023-10-24 应用材料公司 Deposition source, deposition apparatus and method for depositing vaporized material
US11823964B2 (en) * 2021-04-16 2023-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030140858A1 (en) * 2001-04-20 2003-07-31 Marcus Michael A. Reusable mass-sensor in manufacture of organic light-emitting devices
US20040133387A1 (en) * 2001-07-12 2004-07-08 Thomas Volkel Monitoring of measuring signal, in particular in automation technology
US20100086681A1 (en) * 2007-03-06 2010-04-08 Tokyo Electron Limited Control device of evaporating apparatus and control method of evaporating apparatus
US20100316788A1 (en) * 2009-06-12 2010-12-16 Applied Materials, Inc. Deposition rate monitor device, evaporator, coating installation, method for applying vapor to a substrate and method of operating a deposition rate monitor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793193B2 (en) * 1990-05-30 1995-10-09 シャープ株式会社 Method of manufacturing thin film EL device
JPH11222670A (en) * 1998-02-06 1999-08-17 Ulvac Corp Film thickness monitor and film forming device using this
JP4706380B2 (en) * 2005-08-04 2011-06-22 ソニー株式会社 Vapor deposition apparatus and vapor deposition method
JP2009185344A (en) * 2008-02-07 2009-08-20 Sony Corp Vapor deposition method, vapor deposition apparatus, and method for manufacturing display device
US8229691B2 (en) * 2008-06-09 2012-07-24 International Business Machines Corporation Method for using real-time APC information for an enhanced lot sampling engine
EP2508645B1 (en) * 2011-04-06 2015-02-25 Applied Materials, Inc. Evaporation system with measurement unit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030140858A1 (en) * 2001-04-20 2003-07-31 Marcus Michael A. Reusable mass-sensor in manufacture of organic light-emitting devices
US20040133387A1 (en) * 2001-07-12 2004-07-08 Thomas Volkel Monitoring of measuring signal, in particular in automation technology
US20100086681A1 (en) * 2007-03-06 2010-04-08 Tokyo Electron Limited Control device of evaporating apparatus and control method of evaporating apparatus
US20100316788A1 (en) * 2009-06-12 2010-12-16 Applied Materials, Inc. Deposition rate monitor device, evaporator, coating installation, method for applying vapor to a substrate and method of operating a deposition rate monitor device

Also Published As

Publication number Publication date
TW201710536A (en) 2017-03-16
JP6411675B2 (en) 2018-10-24
KR101950959B1 (en) 2019-02-21
TWI612167B (en) 2018-01-21
KR20180112123A (en) 2018-10-11
JP2018519415A (en) 2018-07-19
WO2016202387A1 (en) 2016-12-22
CN107709604A (en) 2018-02-16

Similar Documents

Publication Publication Date Title
WO2018077388A1 (en) Measurement assembly for measuring a deposition rate, evaporation source, deposition apparatus, and method therefor
TWI411695B (en) Apparatus and method for deposition organic compounds, and substrate treating facility with the apparatus
KR102082193B1 (en) Measuring assembly for measuring deposition rate and method therefor
JP6647202B2 (en) Deposition arrangement, deposition device, and method of operation thereof
US20100316788A1 (en) Deposition rate monitor device, evaporator, coating installation, method for applying vapor to a substrate and method of operating a deposition rate monitor device
KR101950959B1 (en) Method for measuring deposition rate and deposition rate control system
JP2005064277A (en) Substrate heater and substrate heating method
KR101940602B1 (en) Measurement assembly for measuring deposition rate and method therefor
JP4522141B2 (en) Organic vapor deposition method and organic vapor deposition apparatus
KR102609982B1 (en) Method for preprocessing vibrating crystals for measuring deposition rate, deposition rate measurement device, evaporation source and deposition apparatus
JP6502528B2 (en) Diffusion barrier for oscillating quartz, measuring assembly for measuring deposition rate and method thereof
JP7102418B2 (en) A source for depositing evaporated material on a substrate, a depositor, a method for measuring the vapor pressure of the evaporated material, and a method for determining the evaporation rate of the evaporated material.
KR100978567B1 (en) Chemical Vapor Deposition Apparatus
JP2008274429A (en) Source gas feeding device
JP2009062615A (en) Source gas feeder

Legal Events

Date Code Title Description
A201 Request for examination
AMND Amendment
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
A107 Divisional application of patent
J201 Request for trial against refusal decision
J301 Trial decision

Free format text: TRIAL NUMBER: 2018101004124; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20181004

Effective date: 20190102

S901 Examination by remand of revocation
GRNO Decision to grant (after opposition)