KR20170136747A - Biosensor and manufacturing of the same - Google Patents

Abstract

The present invention relates to a biosensor and a manufacturing method thereof. According to an embodiment of the present invention, the biosensor comprises: a substrate; a first group formed in a first region on an upper portion of the substrate to analyze a target substance contained in a liquid in a living body; and a second group formed in a second region different from the first region on the upper portion of the substrate to analyze a target substance contained in a liquid in a living body. Each of the first and second groups can comprise: at least one sub-cell analyzing the target substance through the liquid in the living body; a gate com electrically connected to the sub-cell; a bias pad electrically connected to the sub-cell; and a readout pad outputting an electric signal of the target substance analyzed in the sub-cell. According to the present invention, it is possible to measure voltage-current characteristics for a saturated region together with a linear region by inspecting the target substance using a thin film transistor.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a biosensor,

The present invention relates to a biosensor and a method of manufacturing the same, and more particularly, to a biosensor having improved measurement sensitivity and accuracy and a method of manufacturing the same.

Measuring the concentration of clinically relevant substances is important for diagnosis and health care. In particular, the measurement of the concentrations of target substances such as glucose, ketone, creatine, lactate, triglyceride, fructose, alcohol, bilirubin, NAD (P) It can be an important factor in management.

A method of using an electrochemical biosensor as a method for accurately, promptly, and economically measuring the concentration of a clinically meaningful substance in a living body fluid is widely used.

However, the conventional biosensor is composed of an electrode, a biochemical reaction reagent substance, and an electrode, and the characteristics of current and voltage are measured by a change in resistance value through an electrochemical reaction. Accordingly, the measurement result is obtained by detecting the current and voltage characteristics by using the slope value of the resistance and confirming the result of the biochemical reaction. Therefore, there is a problem in that the reliability and sensitivity are low and the reliability is low.

In addition, a conventional biosensor includes only a biochemical reagent material corresponding to a target substance so as to be inspected for one target substance. Therefore, different types of biosensors must be used to carry out the tests for other substances, and the types thereof are various. Therefore, there is a problem that a suitable biosensor must be found and used in order to inspect various target substances.

Korean Patent Publication No. 10-2008-0076434 (2008.08.20)

SUMMARY OF THE INVENTION The present invention provides a biosensor capable of increasing the sensitivity and accuracy of a substance to be measured and a method of manufacturing the same.

Another object of the present invention is to provide a biosensor capable of performing a plurality of tests through one biosensor and a method of manufacturing the same.

A biosensor according to an embodiment of the present invention includes: a substrate; A first group formed in a first region above the substrate for analyzing a target substance contained in a liquid in the living body; And a second group formed on a second region different from the first region on the substrate, for analyzing a target substance contained in the liquid in the living body, wherein each of the first and second groups comprises: One or more subcells for analyzing the substance of interest through the liquid in the container; A gate electrode electrically connected to the sub-cell; A bias pad electrically connected to the sub-cell; And a lead-out pad for outputting an electric signal of a target substance analyzed in the sub-cell.

The in-vivo fluid injected through the injection port may be supplied to the first group and the second group. The in-vivo fluid injected through the injection port may be supplied to the first group and the second group.

Or a first injection port formed in the first region on the substrate, into which liquid in the living body is injected; And a second injection port formed in a second region on the substrate and through which a liquid in the living body is injected, wherein liquid in the living body injected into the first injection port is supplied to the first group, The liquid in vivo can be supplied to the second group.

And each of the one or more sub-cells comprises: a gate electrode disposed on the substrate; A semiconductor active layer disposed on the gate electrode; A drain electrode disposed on the semiconductor active layer and electrically connected to the semiconductor active layer; A source electrode which is disposed on the semiconductor active layer and is electrically connected to the semiconductor active layer and is electrically insulated from the drain electrode; A lower electrode disposed on the drain electrode and the source electrode and electrically connected to the source electrode; A reaction reagent layer disposed on the lower electrode and reacting with the supplied in vivo liquid to output an electric signal; And an upper electrode disposed on the reaction reagent layer.

According to another aspect of the present invention, there is provided a biosensor comprising: a substrate; And at least one sub-cell disposed on the substrate, wherein each of the one or more sub-cells includes: a thin film transistor section disposed on the substrate; And a biosensing unit disposed on the thin film transistor unit and outputting an electrical signal through an electrochemical reaction with the supplied liquid in the living body, wherein the thin film transistor unit is capable of processing the electrical signal output from the biosensing unit have.

The thin film transistor portion may include one or more TFTs.

The thin film transistor unit may include: a gate electrode disposed on the substrate; A semiconductor active layer disposed on the gate electrode; A drain electrode disposed on the semiconductor active layer and electrically connected to the semiconductor active layer; And a source electrode electrically connected to the semiconductor active layer and electrically insulated from the drain electrode, the source electrode being disposed on the semiconductor active layer.

The biosensor may include a lower electrode disposed on the drain electrode and the source electrode and electrically connected to the source electrode. A reaction reagent layer disposed on the lower electrode and reacting with the supplied in vivo liquid to output an electric signal; And an upper electrode disposed on the reaction reagent layer.

The insulating layer may further include an insulating layer covering the drain electrode and the source electrode and disposed below the lower electrode and electrically insulating the drain electrode from the source electrode and the lower electrode, And a via hole for electrically connecting the upper electrode and the lower electrode.

The semiconductor device may further include an insulating layer interposed between the gate electrode and the semiconductor active layer, and may further include an inorganic or organic insulating film interposed between the lower electrode and the reaction reagent layer.

At least one of the drain electrode, the source electrode and the upper electrode may be a discontinuous or alloy containing at least one of Au, Ag, Al, Al-Nd, Al-Cu, Mo, Ti, .

According to another aspect of the present invention, there is provided a method of fabricating a biosensor, including: forming a gate electrode in a region above a substrate; Forming a first insulating layer to cover the gate electrode; Forming a semiconductor active layer on the first insulating layer; Forming a drain electrode and a source electrode on the semiconductor active layer; Forming a second insulating layer on the drain electrode and the source electrode; Forming a lower electrode on the second insulating layer; Forming a third insulating layer on the lower electrode; Forming a reaction reagent layer on the third insulating layer to react with the liquid in vivo to output an electric signal; And forming an upper electrode on the reaction reagent layer, wherein the drain electrode and the source electrode are electrically insulated from each other.

And forming a via hole to expose the source electrode after forming the second insulating layer, wherein the lower electrode may be electrically connected to the source electrode through the via hole.

According to the present invention, a voltage-current characteristic can be measured with respect to a saturation region together with a linear region by inspecting a target material using a thin film transistor. In addition, various output values can be obtained according to the gate voltage and the source voltage of the transistor, and not only the gate voltage-drain current value but also the drain voltage-drain current value can be obtained, and various voltage-current characteristics can be analyzed. Therefore, accurate analysis of the target substance is possible.

The quadrangular-shaped biosensor can be divided into four parts, and different analyzes can be performed in the respective areas. Thus, four tests can be simultaneously performed on the target substance using one biosensor.

1 is a view illustrating a biosensor and an analyzer according to an embodiment of the present invention.
2 is a view illustrating a biosensor according to an embodiment of the present invention.
3 is a cross-sectional view illustrating a sub-cell of a biosensor according to an embodiment of the present invention.
4 is a view for explaining a method of manufacturing a subcell of a biosensor according to an embodiment of the present invention.
5 is a cross-sectional view taken along the cutting line AA 'in FIG. 4 (k).
6 is a view showing various embodiments of a circuit diagram constituting a sub-cell of the biosensor according to the present invention.

Preferred embodiments of the present invention will be described more specifically with reference to the accompanying drawings.

FIG. 1 is a view showing a biosensor and analyzer according to an embodiment of the present invention, and FIG. 2 is a view illustrating a biosensor according to an embodiment of the present invention.

1 and 2, a biosensor 100 according to an exemplary embodiment of the present invention includes a subcell 110, a lead-out pad 120, an offset pad 130, a gate com 140, (150), a blood inlet (160), and a substrate (170).

The subcell 110, the lead-out pad 120, the offset pad 130, the gate com 140, the bias pad 150 and the blood injection port 160 are respectively disposed on the substrate 170. The first to fourth groups G1 to G4 are divided into groups G1 to G4 on the substrate 170 and the sub-cell 110, the lead-out pad 120, the offset pad 130, A comb pad 140, a bias pad 150, and a blood injection port 160 may be disposed. Here, the first to fourth groups G1 to G4 are independent of each other.

Each of the first to fourth groups G1 to G4 may perform an inspection on a target material, and may perform an inspection on each of different target materials. That is, blood in a liquid in vivo such as blood will be described as an example to perform an inspection on a target substance. When the blood extracted from the human body is inserted into the blood inlet 160, the blood is supplied to each of the subcells 110 and analyzed in the subcell 110.

For this, one blood injection port 160 may be disposed at the center of the biosensor 100, or one blood injection port 160 may be disposed in each of the groups G1 to G4. 2 shows that the blood injection ports 160 are disposed at both the center of the biosensor 100 and the respective groups G1 to G4, the blood injection port 160 can be selectively arranged. When only one blood injection port 160 is disposed at the center of the biosensor 100, the blood supplied to the central blood injection port 160 is dispersed and supplied to the respective groups G1 to G4. When the blood injection ports 160 are arranged for each group G1 to G4, four blood injection ports 160 are arranged and blood can be supplied to the respective blood injection ports 160 for analysis. Accordingly, when the blood injection ports 160 are arranged in each group G1 to G4, only a part of the four groups G1 to G4 is selectively analyzed.

When blood is supplied to each of the groups G1 to G4, the biosensor 100 is inserted into the biosensor insertion port 230 of the analyzer 200. When power is supplied to the biosensor 100, ), And the result of the analysis may be displayed on the display unit 210 of the analyzer 200. An input unit 220 may be provided under the display unit 210. The user may enter information for analysis.

The user inputs the biosensor 100 to the biosensor insertion port 230 so as to direct the group (for example, the first group G1) to be analyzed out of the first to fourth groups G1 to G4 to the analyzer 200 Once inserted, the analyzer 200 may supply power to the group. The user may insert the biosensor 100 into the analyzer 200 such that the biosensor 100 is separated and rotated by the analyzer 200 and the other group is directed to the analyzer 200. [ The analysis can be performed.

A plurality of subcells 110 are disposed in each of the groups G1 to G4. An actual analysis of the blood supplied through the blood inlet 160 may be performed in each subcell 110. That is, the blood supplied through the blood inlet 160 is supplied to each subcell 110, and analysis is performed in each subcell 110. For example, in the first group G1, 12 sub-cells 110 may be arranged in the first group G1, and each sub-cell 110 may be analyzed ). Accordingly, the analysis result of each sub cell 110 can be statistically processed and the analysis result can be derived. By analyzing using the plurality of sub-cells 110, the accuracy of the analysis result on the target substance can be improved. Here, the number of sub-cells 110 included in each of the groups G1 to G4 may be changed as needed.

Each subcell 110 is electrically connected to a readout pad 120 and may be powered from the analyzer 200 through a leadout pad 120. For this, the lead-out pad 120 may be disposed on the edge side of the substrate 170.

In addition, each of the sub-cells 110 may be electrically connected to the gate com 140 and the bias pad 150. The power applied from the analyzer 200 can be applied to the biosensor 100 through the lead-out pad 120, the gate com 140 and the bias pad 150, The analysis of the target substance can be performed in the subcell 110 of FIG. At this time, one gate com (140) and one bias pad (150) may be provided on one side of the plurality of sub cells (110), and offset pads (130) on the opposite side may be provided. The electrical connections of the sub-cell 110, the lead-out pad 120, the gate com 140, and the bias pad 150 will be described later.

FIG. 3 is a cross-sectional view illustrating a sub-cell of a biosensor according to an embodiment of the present invention, and FIG. 4 is a view illustrating a method of manufacturing a sub-cell of a biosensor according to an embodiment of the present invention.

3 and 4, a detailed configuration of the sub-cell 110 and a method of manufacturing the sub-cell 110 will be described. A substrate 170 may be disposed at a lower portion of the substrate 170, and each structure of the sub-cell 110 may be stacked over the substrate 170. The sub-cell 110 includes a thin film transistor unit 110a and a biosensing unit 110b. The thin film transistor portion 110a includes a gate electrode 23, a first insulating layer 25, a semiconductor active layer 27, a drain electrode 29, a source electrode 31 and a second insulating layer 33 And the biosensor 110b includes a lower electrode 35, a third insulating layer 37, a reaction reagent layer 39, and an upper electrode 41.

A method of manufacturing the thin film transistor unit 110a will be described with reference to the drawings shown in FIGS. 4A to 4F. Next, the biosensing unit 110b ) Will be described with reference to the drawings shown in Figs. 4 (g) to 4 (k).

A blood injection port 160 may be formed on one side of the substrate 170 and a blood transfer path 162 extending from the blood injection port 160 may be formed as shown in Figure 4 (a) . The reaction reagent contacting portion 164 may be formed at the end of the blood flow path 162 so that the reaction reagent contacting portion 164 is perpendicular to the blood transfer path 162 to facilitate contact with the reaction reagent layer 39. [ And a plurality of concavo-convex structures may be formed in order to increase the contact area with the reaction reagent layer 39. At this time, the blood injection port 160, the blood transfer path 162, and the reaction reagent contacting portion 164 may have the shape of a groove having a predetermined depth on the upper surface of the substrate 170.

3 and 4 (b), the gate electrode 23 is arranged to cover a part of the upper part of the substrate 170. The gate electrode 23 is formed at a position spaced apart from the blood injection port 160 formed on the substrate 170 do. At this time, the planar shape of the gate electrode 23 may be formed to have a length in one direction adjacent to the sides of the substrate 170, and may have a shape extending partially in a direction perpendicular to the longitudinal direction. The gate electrode 23 may be a single layer or an alloy including any one or more of Al, Al-Nd, Al-Cu, Mo, Ti, Ta and Cr.

A first insulating layer 25 may be formed to cover the upper portion of the gate electrode 23. The first insulating layer 25 may be formed to cover a part of the gate electrode 23, as shown in FIGS. 3 and 4 (c). At this time, the first insulating layer 25 covers a portion extending in the vertical direction in the longitudinal direction of the gate electrode 23, and does not cover the portion where the gate electrode 23 is formed in the longitudinal direction. The first insulating layer 25 is formed at a position spaced apart from the reaction reagent contacting portion 164 and covers most of the substrate 170 on which the blood injection port 160 is not formed.

At this time, the first insulating layer 25 may be provided to electrically isolate the gate electrode 23 from other electrodes, and may include SiO ₂ or the like.

The semiconductor active layer 27 is formed on the first insulating layer 25 in a state where the first insulating layer 25 is disposed. The semiconductor active layer 27 is formed so as to cover only a part of the first insulating layer 25 at the upper portion of the middle gate electrode 23 on the first insulating layer 25. At this time, the semiconductor active layer 27 is not required to cover the entire gate electrode 23 covered by the first insulating layer 25, and as shown in FIG. 4 (d) .

The semiconductor active layer 27 may include at least one of amorphous silicon, low-temperature polycrystalline silicon, and an oxide semiconductor. At this time, the oxide semiconductor may be a compound of two or more of In, GaN, Zn and O.

4 (e), the drain electrode 29 and the source electrode 31 are formed so as to cover the upper part of the semiconductor active layer 27. As shown in FIG. The drain electrode 29 and the source electrode 31 include the same material and are formed so as to cover a part of the upper surface and the side surface of the semiconductor active layer 27, respectively.

At this time, the drain electrode 29 and the source electrode 31 can be formed using one electrode member. That is, the electrode member is formed at a position spaced apart from the first insulating layer 25 in the longitudinal direction perpendicular to the gate electrode 23, and extends in the direction perpendicular to the longitudinal direction of the electrode member to cover the semiconductor active layer 27 . Accordingly, the electrode member may have a shape such as "a" as shown in Fig. 4 (e).

The electrode member disposed on the semiconductor active layer 27 is then etched to separate the drain electrode 29 and the source electrode 31 so that the drain electrode 29 and the source electrode 31 are separated and electrically isolated . As described above, the drain electrode 29 and the source electrode 31 are etched and separated, so that a predetermined groove can be formed on the semiconductor active layer 27 in FIG.

The drain electrode 29 and the source electrode 31 are disposed using the same electrode member and the drain electrode 29 and the source electrode 31 are formed of Al, Al-Nd, Al-Cu, Mo, Ti, Ta And Cr, and may be a single layer or a multi-layer.

The second insulating layer 33 is disposed so as to cover the drain electrode 29, the semiconductor active layer 27 and the source electrode 31 as shown in FIG. 4 (f). The second insulating layer 33 is disposed on the first insulating layer 25 and may have a size equal to or smaller than that of the first insulating layer 25. The second insulating layer 33 can be in contact with the first insulating layer 25 at a position not in contact with the drain electrode 29, the semiconductor active layer 27 and the source electrode 31. [ At this time, the second insulating layer 33 may include the same material as the first insulating layer 25.

As shown in FIG. 4 (g), the second insulating layer 33 may include via holes (H). The via hole H is formed on the source electrode 31 and the source electrode 31 can be exposed by the via hole H. [ The drain electrode 29 may be electrically connected to an external lead-out pad 120 and the source electrode 31 may be electrically connected to a lower electrode 35 to be described later.

Referring to FIG. 4 (h), the lower electrode 35 is disposed on the second insulating layer 33 including the via hole H. The lower electrode 35 is formed on the second insulating layer 33 while filling the via hole H and is electrically connected to the source electrode 31 through the via hole H. [ The lower electrode 35 may have a size smaller than that of the second insulating layer 33 and may not be formed on the drain electrode 29 and the semiconductor active layer 27 as shown in FIG.

In the present embodiment, the lower electrode 35 may be a discontinuous or alloy containing any one or more of Au, Ag, Al, Al-Nd, Al-Cu, Mo, Ti, Ta and Cr, Or may be multi-layered. The lower electrode 35 may be formed by a vacuum deposition method, a photolithography method, a wet etching method, or a dry etching method.

Referring to FIG. 4 (i), a third insulating layer 37 may be formed on the lower electrode 35. The third insulating layer 37 is formed to cover a part of the lower electrode 35 and may be formed of an organic or inorganic insulating film. At this time, since the third insulating layer 37 is smaller than the size of the lower electrode 35, a part of the lower electrode 35 may be exposed on the upper part.

4 (j), a reaction reagent layer 39 may be formed on the third insulating layer 37. [0052] As shown in FIG. The reaction reagent layer 39 is a layer in which a biochemical reaction takes place through contact with a target material and covers the entirety of the third insulating layer 37 and forms the lower electrode 35 so as to be in electrical contact with the exposed lower electrode 35. [ . The reaction reagent layer 39 may have a size larger than that of the first insulating layer 25 so that the reaction reagent contacting portion 164 adjacent to the first insulating layer 25 is also covered. The reaction reagent layer 39 is formed so as to cover the lower electrode 35, the third insulating layer 37, and the reaction reagent contacting portion 164.

Since the reaction reagent layer 39 is formed so as to cover the reaction reagent contacting portion 164, the target substance such as blood supplied through the reaction reagent contacting portion 164 can be in contact with the reaction reagent layer 39, An electrochemical reaction can be performed.

In this embodiment, the reaction reagent layer 39 may be formed by applying the solution itself, or may be formed by an electronic printing method, a nozzle printing method, a silk screen printing method, or the like. The reaction reagent layer 39 thus formed may be formed in the form of a solid, liquid, powder, or gel.

The upper electrode 41 is formed so as to cover the reaction reagent layer 39, as shown in Fig. 4 (k). The upper electrode 41 may have a size smaller than the size of the lower electrode 35, and the common electrode connection portion 41a may extend to one side. The common electrode connection portion 41a may extend from the upper electrode 41 and may be electrically connected to the bias pad 150. [ The upper electrode 41 may be a single layer or an alloy containing at least one of Au, Ag, Al, Al-Nd, Al-Cu, Mo, Ti, Ta and Cr, May be multi-layered.

In this embodiment, the upper electrode 41 may be formed by an electronic printing method, a nozzle printing method, a silk screen printing method, or the like. In the present embodiment, the lower electrode 35 and the upper electrode 41 may be formed of the above-described metal, or a transparent electrode such as ITO may be used.

As described above, since the lower electrode 35, the reaction reagent layer 39, and the upper electrode 41 are formed, the signal generated through the electrochemical reaction in the reaction reagent layer 39 of the biosensor 110b is And may be transmitted to the thin film transistor unit 110a.

In one embodiment of the invention, Fig. 3 may be a sectional view taken along the percutaneous line II 'of Fig. 4 (k).

5 is a cross-sectional view taken along the cutting line AA 'in FIG. 4 (k).

5 is a cross-sectional view illustrating a reaction reagent layer 39 formed on the blood flow path 162 of the blood injection port 160. The reaction reagent contacting portion 164 and the reaction reagent layer 39 The contact also has the same cross-sectional shape. The blood flow path 162 may be formed on the substrate 170 through an etching or patterning process (for example, an SU-8 patterning process), and the depth of the blood flow path 162 may be about 10 탆 to 500 탆 . The reaction reagent layer 39 may be directly contacted to a portion of the blood transfer path 162 and the upper portion of the reaction reagent contacting portion 164. Accordingly, a liquid such as blood injected through the blood injection port 160 can generate an electric signal through contact with the reaction reagent layer 39. For this, the reaction reagent layer 39 may be coated with a reagent composition including an enzyme and an electron transfer medium.

The target substance such as blood infiltrated into the reaction reagent layer 39 may be applied between the upper electrode 41 and the lower electrode 35 at the upper end of the thin film transistor portion 110a to be ready for analysis. According to the voltage applied to the gate electrode 140 and the upper electrode 41, the analyzer 200 can read the signal using the current or voltage through the lead-out pad 120.

6 is a view showing various embodiments of a circuit diagram constituting a sub-cell of the biosensor according to the present invention. In other words, each of the drawings shown in FIG. 6 is a view showing various embodiments of the thin film transistor portion 110a of the sub-cell 110 in various modifications.

6 (a) shows that the sub-cell 110 is formed by using the thin film transistor portion 110a in which one TFT is used. The upper electrode 41 and the lower electrode 35 are disposed on the upper and lower sides of the reaction reagent layer 39 and the upper electrode 41 is electrically connected to the bias pad 150 And the lower electrode 35 may be electrically connected to the lead-out pad 120 and the gate capacitor 140 by being connected to the TFT.

6 (b) and 6 (c) show a subcell 110 including a thin film transistor portion 110a having two TFTs. 6 (b), the upper electrode 41 is electrically connected to the first TFT (TFT1), and the first TFT (TFT1) is connected to the input voltage and the lead-out pad 120 And is electrically connected. The upper electrode 41 is electrically connected to the second TFT (TFT2), and the second TFT (TFT2) can be electrically connected to the offset pad 130 for a positive voltage and a reset. The lower electrode 35 may be electrically connected to the bias pad 150.

6C, the upper electrode 41 is electrically connected to the bias pad 150, the lower electrode 35 is connected to the first and second TFTs TFT1 and TFT2, And is electrically connected. The first TFT (TFT1) is electrically connected to the gate com (140) and the lead-out pad (120), and the second TFT (TFT2) is electrically connected to the gate reset and the offset pad (130).

6 (d) and 6 (e) are views showing a subcell 110 including a thin film transistor portion 110a having three TFTs. 6 (d), the upper electrode 41 is electrically connected to the second and third TFTs (TFT2 and TFT3), and the second TFT (TFT2) is electrically connected to the first TFT ). The first TFT (TFT1) may be electrically connected to the gate com 140 and the lead-out pad 120, and the second and third TFTs (TFT2, TFT3) may be electrically connected to the DD voltage. And the second TFT (TFT2) may be electrically connected to the offset pad 130. [ In addition, the lower electrode 35 may be electrically connected to the bias pad 150.

6E shows a subcell 110 in which the lower electrode 35 is electrically connected to the bias pad 150 and the upper electrode 41 is electrically connected to the first and second TFTs TFT1 and TFT2 And can be electrically connected. The first TFT (TFT1) may be electrically connected to the third TFT (TFT3) and the third TFT (TFT3) may be electrically connected to the gate reset and the lead-out pad 120. [ Also, the second TFT (TFT2) may be electrically connected to the (+) voltage and the offset pad 130.

That is, as shown in FIG. 6, the circuit configuration of the thin film transistor unit 110a can be variously changed according to the characteristics of the target material to be analyzed. In the respective groups G1 to G4, the thin film transistor units 110a The sub-cell 110 having the configuration of FIG.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It should be understood that the scope of the present invention is to be understood as the scope of the following claims and their equivalents.

100: Biosensor
110: Subcell
110a: thin film transistor section
23: gate electrode 25: first insulating layer
27: semiconductor active layer 29: drain electrode
31: source electrode 33: second insulating layer
110b:
35: lower electrode 37: third insulating layer
39: reaction reagent layer 41: upper electrode
41a: common electrode connection portion
120: lead-out pad 130: offset pad
140: gate com 150: bias pad
160: blood injection port 162: blood flow path
164: reaction reagent contact portion 170: substrate
200: Analyzer 210: Display
220: input unit 230: biosensor insertion port
G1 to G4: first to fourth groups H:

Claims (12)

Board;
A first group formed in a first region above the substrate for analyzing a target substance contained in a liquid in the living body; And
And a second group formed on a second region different from the first region on the substrate for analyzing a target substance contained in the liquid in the living body,
Wherein each of the first and second groups comprises:
One or more subcells for analyzing a substance of interest through the liquid in vivo;
A gate electrode electrically connected to the sub-cell;
A bias pad electrically connected to the sub-cell; And
And a lead-out pad for outputting an electric signal of a target substance analyzed in the sub-cell. The method according to claim 1,
Further comprising an injection port formed on the substrate for injecting liquid in the living body,
Wherein the in-vivo liquid injected through the injection port is supplied to the first group and the second group. The method according to claim 1,
A first injection port formed in the first region on the substrate and into which liquid in the living body is injected; And
And a second injection port formed in a second region on the substrate and into which liquid in the living body is injected,
Wherein liquid in the living body injected into the first injection port is supplied to the first group, and liquid in the living body injected into the second injection port is supplied to the second group. The method of claim 1, wherein each of the one or more sub-
A gate electrode disposed on the substrate;
A semiconductor active layer disposed on the gate electrode;
A drain electrode disposed on the semiconductor active layer and electrically connected to the semiconductor active layer;
A source electrode which is disposed on the semiconductor active layer and is electrically connected to the semiconductor active layer and is electrically insulated from the drain electrode;
A lower electrode disposed on the drain electrode and the source electrode and electrically connected to the source electrode;
A reaction reagent layer disposed on the lower electrode and reacting with the supplied in vivo liquid to output an electric signal; And
And an upper electrode disposed on the reaction reagent layer. Board; And
And at least one subcell disposed on the substrate,
Each of the one or more sub-
A thin film transistor disposed on the substrate; And
And a biosensing unit disposed on the thin film transistor unit and outputting an electric signal through an electrochemical reaction with the supplied liquid in the living body,
Wherein the thin film transistor unit processes the electrical signal output from the biosensing unit. The method of claim 5,
Wherein the thin film transistor section includes at least one TFT. The thin-film transistor according to claim 5,
A gate electrode disposed on the substrate;
A semiconductor active layer disposed on the gate electrode;
A drain electrode disposed on the semiconductor active layer and electrically connected to the semiconductor active layer; And
And a source electrode that is disposed on the semiconductor active layer and is electrically connected to the semiconductor active layer and is electrically insulated from the drain electrode. 8. The biosensor according to claim 7,
A lower electrode disposed on the drain electrode and the source electrode and electrically connected to the source electrode;
A reaction reagent layer disposed on the lower electrode and reacting with the supplied in vivo liquid to output an electric signal; And
And an upper electrode disposed on the reaction reagent layer. The method according to claim 4 or 8,
Further comprising an insulating layer covering the drain electrode and the source electrode and disposed below the lower electrode and electrically insulating the drain electrode from the source electrode and the lower electrode,
Wherein the insulating layer includes a via hole for electrically connecting the source electrode and the lower electrode. The method according to claim 4 or 8,
Wherein at least one of the drain electrode, the source electrode, and the upper electrode is a discontinuous or alloy including at least one of Au, Ag, Al, Al-Nd, Al-Cu, Mo, Ti, Ta and Cr. Forming a gate electrode in a portion of the upper portion of the substrate;
Forming a first insulating layer to cover the gate electrode;
Forming a semiconductor active layer on the first insulating layer;
Forming a drain electrode and a source electrode on the semiconductor active layer;
Forming a second insulating layer on the drain electrode and the source electrode;
Forming a lower electrode on the second insulating layer;
Forming a third insulating layer on the lower electrode;
Forming a reaction reagent layer on the third insulating layer to react with the liquid in vivo to output an electric signal; And
And forming an upper electrode on the reaction reagent layer,
Wherein the drain electrode and the source electrode are electrically insulated from each other. The method of claim 11,
Further comprising forming a via hole such that the source electrode is exposed after forming the second insulating layer,
And the lower electrode is electrically connected to the source electrode through the via hole.

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