KR20170128022A - Substrate and light emitting device having the same - Google Patents

Abstract

An embodiment of the present invention relates to a substrate, a light emitting device, a backlight unit, and a lighting system. According to an embodiment of the present invention, the substrate comprises: a growth substrate having an uneven structure on an upper part; a first semiconductor layer covering the uneven structure on the growth substrate; and a reflection part located on the first semiconductor layer, including a first layer and a second layer alternating 7 to 30 pairs, and having a refractive index of 2.14 or more. Therefore, light emitting efficiency and internal quantum efficiency are improved as well as reliability can be improved.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate,

Embodiments relate to a substrate, a light emitting device, a backlight unit, and a lighting system.

A light emitting diode (LED) is one of light emitting devices that emits light when current is applied. The light emitting diode is capable of emitting light with high efficiency at a low voltage, thus providing excellent energy saving effect.

Nitride semiconductors have attracted great interest in the development of optical devices and high output electronic devices due to their high thermal stability and wide band gap energy. Particularly, ultraviolet (UV) light emitting elements, blue light emitting elements, green light emitting elements, and red light emitting elements using nitride semiconductors are commercially available and widely used.

The wavelength of the light emitted from the light emitting device may be internally lost depending on the material of the semiconductor layer, the material of the lower substrate, or the structure of the lower substrate, There has been a problem that the efficiency is lowered.

Embodiments can provide a substrate and a light emitting device having the same that can improve a light emitting efficiency by reflecting a target wavelength.

Embodiments can provide a substrate capable of improving internal quantum efficiency and a light emitting device having the same.

Embodiments can provide a substrate having a full width at a half maximum (FWHM) of 20 nm or less as a target wavelength to be reflected, and a light emitting device having the substrate.

The embodiment can provide a light emitting device having a half width of 20 nm or less and having a reflectance of 70% or more and improving the reliability.

A substrate according to an embodiment includes a growth substrate having a concave-convex structure on an upper portion thereof; A first semiconductor layer covering the concave-convex structure on the growth substrate; And a reflective portion disposed on the first semiconductor layer and having a refractive index of 2.14 or more including first and second layers alternating from 7 to 30 pairs to improve luminous efficiency and internal quantum efficiency as well as improve reliability .

The light emitting device according to the embodiment includes: the substrate; A partition wall including a recess disposed on the substrate; And a light emitting structure disposed on the substrate, the light emitting structure including a light emitting structure disposed in the recess, thereby improving not only luminous efficiency and internal quantum efficiency but also reliability.

The embodiment can improve the luminous efficiency by including a reflection part that reflects a target wavelength of a critical angle or less in the light proceeding to the growth substrate.

Embodiments can provide a substrate capable of improving internal quantum efficiency by including a reflector that reflects a target wavelength of a critical angle or less in light traveling to a growth substrate, and a light emitting device having the substrate.

The embodiment has a half-width (FWHM) of the reflected target wavelength of 20 nm or less and has a reflectance of 70% or more so that the reliability can be improved.

The light emitting device of the embodiment may include a reflector that reflects a target wavelength of a critical angle or less in light traveling from the light emitting structure to the substrate, thereby improving the light emitting efficiency.

The light emitting device of the embodiment includes a reflection portion that reflects a target wavelength of a critical angle or less in light traveling in the substrate direction, thereby improving the internal quantum efficiency.

The light emitting device of the embodiment has a half wavelength (FWHM) with a target wavelength of 20 nm or less reflected from the reflector and can have a reflectance of 70% or more. Therefore, the light emitting device of the embodiment can improve the reliability of realizing light of a specific wavelength.

The light emitting device of another embodiment can directly grow the light emitting structure on the substrate to omit a separate structure for joining the light emitting structure and the substrate, thereby simplifying the manufacturing process and reducing the manufacturing cost.

1 is a cross-sectional view showing a substrate of a semiconductor device according to an embodiment.
2 is a cross-sectional view showing the reflection portion of FIG.
3 is a cross-sectional view illustrating the light traveling direction of the substrate according to the embodiment.
Figs. 4 and 5 are diagrams showing half-widths (FWHM) of reflected light of? / 4 and 3? / 4.
6 is a cross-sectional view illustrating a light emitting device including a substrate according to an embodiment.
7 is a cross-sectional view showing a light emitting device of another embodiment.
8 is a view showing a backlight unit including the light emitting device of the embodiment.
9 is a diagram showing an illumination system including the light emitting device of the embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

FIG. 1 is a cross-sectional view illustrating a substrate of a semiconductor device according to an embodiment, FIG. 2 is a cross-sectional view illustrating a reflection portion of FIG. 1, FIG. 3 is a cross- And Fig. 5 is a diagram showing a half-width (FWHM) of reflected light of? / 4 and 3? / 4.

1 to 5, a substrate 100 of a semiconductor device according to an embodiment includes a growth substrate 101, a first semiconductor layer 110, a reflective portion 120, and a second semiconductor layer 130, . ≪ / RTI > The substrate 100 of the embodiment can improve the light emitting efficiency and the internal quantum efficiency by reflecting a target wavelength of 70% or more, and the reflected target wavelength can have a half-width (FWHM) of 20 nm or less to improve the reliability. For this, the substrate 100 of the embodiment has a structure in which the first and second layers 121a to 121g and 123a to 123g having different refractive indexes are formed on the growth substrate 101 having the concavo- And may include the alternating reflective portion 120.

The growth substrate 101 may be formed of a material having excellent thermal conductivity. The growth substrate 101 may be a conductive substrate or an insulating substrate. For example, the growth substrate 101 may use at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ O ₃ . The concavo-convex structure 101P may be formed on the substrate 101, but the present invention is not limited thereto.

The embodiment may be a sapphire (Al ₂ O ₃ ) substrate having the uneven structure 101P. For example, the growth substrate 101 may be a patterned sapphire substrate (PSS). The growth substrate 101 may have a refractive index of 2.14 or less.

The first semiconductor layer 110 may be disposed on the growth substrate 101. The first semiconductor layer 110 may be disposed on the concave-convex structure 101P. The first semiconductor layer 110 may cover the uneven structure 101P. The upper surface of the first semiconductor layer 110 may be disposed above the protruding upper end of the concavoconvex structure 101P. The distance d between the upper surface of the first semiconductor layer 110 and the protruding end of the concave-convex structure 101P may be 5 탆 or more, but is not limited thereto. The first semiconductor layer 110 may be formed of at least one of Group III-V or Group II-VI compound semiconductor such as GaN, AlN, InN, InGaN, AlGaN, InAlGaN and AlInN.

The reflective portion 120 may be disposed on the first semiconductor layer 110. The reflective portion 120 may reflect a target wavelength of a critical angle or less in the light traveling to the growth substrate 101. Here, the target wavelength reflected from the reflection unit 120 may have a peak wavelength at 470 nm to 490 nm, or may include a peak wavelength at 510 nm to 530 nm, but the present invention is not limited thereto. For example, the target wavelength may be an ultraviolet wavelength and an infrared wavelength.

The reflection part 120 may be extracted to the outside through the side of the reflection part 120 or the growth substrate 101 through the destructive interference of light having a critical angle in the light propagating to the growth substrate 101. The reflection unit 120 may induce total reflection of light traveling to the growth substrate 101 and may be extracted to the outside through the side of the reflection unit 120 or the growth substrate 101. That is, the reflection unit 120 removes the residual photons inside the substrate 100, thereby improving the light efficiency degradation caused by the residual photons and improving the thermal energy conversion.

The refractive index of the reflective portion 120 may be 2.14 or more. For example, the refractive index of the reflective portion 120 may be 2.14 to 3.17. The substrate 100 may have a refractive index that decreases from the reflective portion 120 toward the growth substrate 101. That is, since the substrate 100 has a refractive index that is lowered toward the growth substrate 101, the wavelengths other than the target wavelength and the extraction efficiency of the residual photons can be improved. The reflective portion 120 may include first and second layers 121a to 121g and 123a to 123g alternating with 7 to 30 pairs. The first and second layers 121a to 121g and 123a to 123g may have refractive indices different from each other. The reflective portion 120 may include first and second layers 121a to 121g and 123a to 123g for reflecting a target wavelength, thereby improving light extraction efficiency of a target wavelength.

When the refractive index of the reflective portion 120 is less than 2.14, the crystallinity may be deteriorated and the refractive index difference between the first semiconductor layer 110 and the second semiconductor layer 130 And it may be difficult to improve the conversion of heat energy by the photons remaining inside. For example, when the first semiconductor layer 110 is GaN, the refractive index of the first semiconductor layer 110 may be 2.45.

When the refractive index of the reflective portion 120 is greater than 3.17, the crystallinity may be degraded. Due to the difference in refractive index between the adjacent first semiconductor layer 110 or the second semiconductor layer 130, Lt; RTI ID = 0.0 > photons < / RTI > remaining internally.

When the first and second layers 121a to 121g and 123a to 123g are less than 7 pairs, the reflectance of the target wavelength may be lowered. When the first and second layers 121a to 121g and 123a to 123g are more than 30 pairs, the reflectance may be high, but the wavelengths outside the target wavelength may be reflected and the external extraction of the residual photons may be degraded.

The first and second layers 121a to 121g and 123a to 123g may have refractive indices different from each other. For example, the first and second layers 121a to 121g and 123a to 123g may include GaN, AlN, AlGaN, but are not limited thereto. For example, the first layers 121a to 121g may be GaN, and the second layers 123a to 123g may be Al _x Ga _1-x N (0 <x? 1).

For example, when the reflector 120 of the first embodiment reflects a blue wavelength having a peak wavelength at 470 nm to 490 nm, the thickness of each of the first layers 121a to 121g may be 48 nm to 150 nm, The thickness of each of the second layers 123a to 123g may be 50 nm to 155 nm. Here, _x of Al _x Ga _1-x N of the second layers 123a to 123g may be 0.3. The thickness of each of the first layers 121a to 121g may be thinner than the thickness of each of the second layers 123a to 123g. As shown in FIGS. 4 and 5, the half width (FWHM) of the reflected blue wavelength may become thicker as the thickness of each of the first and second layers 121a to 121g and 123a to 123g of the embodiment is thinner. 4 is a graph showing the relationship between the thickness of each of the first layers 121a to 121g and the thickness of the second layer 123a, 5 shows a case where the thickness of each of the first layers 121a to 121g is 150 nm and the thickness of each of the second layers 123a to 123g is 155 nm, Target wavelength. The embodiment may implement a blue wavelength having a half width (FWHM) of 20 nm or less by adjusting the thickness of the first and second layers 121a to 121g and 123a to 123g.

When the reflective portion 120 of the second embodiment reflects a blue wavelength having a peak wavelength at 470 nm to 490 nm, the thickness of each of the first layers 121a to 121g may be 48 nm to 150 nm, The thickness of each of the second layers 123a to 123g may be 54 nm to 170 nm. Here, AlN of the second layers 123a to 123g may be used. The thickness of each of the first layers 121a to 121g may be thinner than the thickness of each of the second layers 123a to 123g. As the thickness of each of the first and second layers 121a to 121g and 123a to 123g is thinner, the half width (FWHM) of the reflected blue wavelength may be thicker. A blue wavelength having a half width (FWHM) of 20 nm or less can be realized by adjusting the thickness of the first and second layers 121a to 121g and 123a to 123g. The difference in thickness between the first and second layers 121a to 121g and 123a to 123g may be larger as the difference in refractive index between the first and second layers 121a to 121g and 123a to 123g is greater, no.

When the reflector 120 of the third embodiment reflects a green wavelength having a peak wavelength at 510 nm to 530 nm, the thickness of each of the first layers 121a to 121g may be 52 nm to 160 nm, The thickness of each of the second layers 123a to 123g may be 54 nm to 170 nm. Here, _x of Al _x Ga _1-x N of the second layers 123a to 123g may be 0.3. The thickness of each of the first layers 121a to 121g may be thinner than the thickness of each of the second layers 123a to 123g. As the thickness of each of the first and second layers 121a to 121g and 123a to 123g is thinner, the half width (FWHM) of the reflected green wavelength may be thicker. A green wavelength having a half width (FWHM) of 20 nm or less can be realized by controlling the thickness of the first and second layers 121a to 121g and 123a to 123g.

When the reflector 120 of the fourth embodiment reflects a green wavelength having a peak wavelength at 510 nm to 530 nm, the thickness of each of the first layers 121a to 121g may be 52 nm to 160 nm, The thickness of each of the second layers 123a to 123g may be 59 nm to 180 nm. Here, AlN of the second layers 123a to 123g may be used. The thickness of each of the first layers 121a to 121g may be thinner than the thickness of each of the second layers 123a to 123g. As the thickness of each of the first and second layers 121a to 121g and 123a to 123g is thinner, the half width (FWHM) of the reflected green wavelength may be thicker. A green wavelength having a half width (FWHM) of 20 nm or less can be realized by controlling the thickness of the first and second layers 121a to 121g and 123a to 123g. The difference in thickness between the first and second layers 121a to 121g and 123a to 123g may be larger as the difference in refractive index between the first and second layers 121a to 121g and 123a to 123g is greater, no.

The second semiconductor layer 130 may be disposed on the reflective portion 120. The second semiconductor layer 130 may be in direct contact with the reflective portion 120. The second semiconductor layer 130 may be formed of at least one of Group III-V or Group II-VI compound semiconductor such as GaN, AlN, InN, InGaN, AlGaN, InAlGaN and AlInN. Although the embodiment has a structure in which the second semiconductor layer 130 is disposed on the reflective portion 120, the present invention is not limited thereto. For example, the second semiconductor layer 130 may be omitted.

The embodiment can improve the luminous efficiency by including the reflection unit 120 that reflects a target wavelength below a critical angle in the light traveling to the growth substrate 101.

Embodiments can provide a substrate that can improve the internal quantum efficiency by including a reflection portion 120 that reflects a target wavelength of a critical angle or less in light traveling to a growth substrate 101 and a light emitting device having the same.

The embodiment has a half-width (FWHM) of the reflected target wavelength of 20 nm or less and has a reflectance of 70% or more so that the reliability can be improved.

6 is a cross-sectional view illustrating a light emitting device including a substrate according to an embodiment.

As shown in FIG. 6, the light emitting device 200 of the embodiment may include the substrate 100. The substrate 100 may employ the technical features of FIGS.

The light emitting device 200 may include a barrier 170 having a recess and a light emitting structure 150 disposed in a recess of the barrier 170.

The barrier rib 170 may include at least one of a light-transmitting material, a reflective material, and an insulating material. The barrier rib 170 may be a resin-based insulating material. For example, the barrier ribs 170 may be formed of at least one of a resin material such as polyphthalamide (PPA), an epoxy or a silicon material, and silicon (Si). The barrier rib 170 may be square, for example, but is not limited thereto. The shape of the top view of the barrier ribs 170 may be circular or polygonal.

The light emitting structure 150 includes a first conductive semiconductor layer 151. An active layer 153, and a second conductivity type semiconductor layer 155.

The first conductive semiconductor layer 151 may be formed of a compound semiconductor such as a Group 3-Group-5 or a Group-6-Group, and may be doped with a first conductive-type dopant. For example, the first conductive semiconductor layer 151 may include a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? can do. The first conductive semiconductor layer 151 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP. When the first conductive semiconductor layer 151 is an n-type semiconductor layer, it may include Si, Ge, Sn, Se, and Te as an n-type dopant, but is not limited thereto. The first conductive semiconductor layer 151 may be formed by a chemical vapor deposition (CVD) method, a molecular beam epitaxy (MBE) method, a sputtering method, or a vapor phase epitaxy (HVPE) method . The first conductive semiconductor layer 151 may be formed by depositing a silane containing an n-type impurity such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ) Gas (SiH ₄ ) may be implanted and formed.

Electrons injected through the first conductive type semiconductor layer 151 and holes injected through the second conductive type semiconductor layer 155 formed after the first and the second conductive type semiconductor layers 155 and 155 collide with each other to form an energy band unique to the active layer Which emits light having an energy determined by &lt; RTI ID = 0.0 &gt;

The active layer 153 may be formed of at least one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure. For example, the active layer 153 may be formed of a multiple quantum well structure by injecting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) But is not limited thereto. The active layer 153 may include a well layer / barrier layer structure. For example, the well layer / barrier layer structure may be formed of one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) But are not limited thereto. The well layer may be formed of a material having a band gap lower than the band gap of the barrier layer.

The second conductive semiconductor layer 155 may be formed of a compound semiconductor such as a Group III-V or Group VI, and may be doped with a second conductive type dopant. For example, the second conductive semiconductor layer 155 may include a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? can do. The second conductive semiconductor layer 155 may be formed of any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP. When the second conductive type semiconductor layer 155 is a p-type semiconductor layer, the second conductive type dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant. The second conductive type semiconductor layer 155 is Bisei containing trimethyl gallium gas (TMGa), ammonia gas (NH _3), p-type impurity such as nitrogen gas (N _2), and magnesium (Mg) into the chamber butyl bicyclo The p-type GaN layer may be formed by implanting pentadienyl magnesium (EtCp ₂ Mg) {Mg (C ₂ H ₅ C ₅ H ₄ ) ₂ }, but the present invention is not limited thereto.

In the light emitting device 200 of the embodiment, a bonding layer 140 may be disposed between the light emitting structure 150 and the substrate 100. The bonding layer 140 may directly contact the bottom of the first conductive semiconductor layer 151 of the light emitting structure 150. The bonding layer 140 may be used as a barrier metal or a bonding metal and the material may be selected from the group consisting of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, But it is not limited thereto. For example, the bonding layer 140 may include benzocyclobutene (BCB), SU-8, acrylic or organic materials having a transmittance of 70% or more, inorganic materials such as SOG, or combinations thereof.

The light emitting device 200 of the embodiment may include a reflector 120 that reflects a target wavelength of a critical angle or less in the light traveling from the light emitting structure 150 to the substrate 100 to improve luminous efficiency.

The light emitting device 200 of the embodiment may include a reflection unit 120 that reflects a target wavelength of a critical angle or less in the light traveling in the direction of the substrate 100 to improve internal quantum efficiency.

The light emitting device 200 of the embodiment has a half-width (FWHM) of 20 nm or less and a reflectance of 70% or more at a target wavelength reflected from the reflector 120. Therefore, the light emitting device 200 of the embodiment can improve the reliability of realizing light of a specific wavelength.

7 is a cross-sectional view showing a light emitting device of another embodiment.

As shown in FIG. 7, the light emitting device 300 of another embodiment may include the substrate 100. The substrate 100 may employ the technical features of FIGS.

The light emitting device 300 may include a barrier 170 having a recess and a light emitting structure 350 disposed in a recess of the barrier 170.

The barrier ribs 170 may adopt the technical features of the light emitting device 200 of the embodiment of FIG.

The light emitting structure 350 includes a first conductive semiconductor layer 351. An active layer 353 and a second conductivity type semiconductor layer 355. [ The structure of each of the light emitting structures 350 may employ the technical features of the light emitting device 200 of the embodiment of FIG.

The light emitting structure 350 may be formed on the second semiconductor layer 130. For example, the first conductive semiconductor layer 351 may be grown on the second semiconductor layer 130. Specifically, the second semiconductor layer 130 may be formed of at least one of Group III-V or Group II-VI compound semiconductor such as GaN, AlN, InN, InGaN, AlGaN, InAlGaN and AlInN. For example, the second semiconductor layer 130 may be GaN, and the first conductive semiconductor layer 351 may be GaN including a first conductive dopant. However, the present invention is not limited thereto.

As another example, the light emitting structure 350 may be formed on the reflective portion 120. For example, the first conductive semiconductor layer 351 may be grown on the reflective portion 120. Specifically, the second semiconductor layer 130 may be omitted, and the uppermost layer of the reflective portion 120 may be a Group III-V or Group IIB compound semiconductor such as GaN, AlN, InN, InGaN, AlGaN, InAlGaN , And AlInN. For example, the uppermost layer of the reflective portion 120 may be GaN, and the first conductive semiconductor layer 351 may be GaN including a first conductive dopant. However, the present invention is not limited thereto.

The light emitting device 300 of another embodiment may be manufactured by directly growing the light emitting structure 350 on the substrate 100 to omit a separate structure for joining the light emitting structure 350 and the substrate 100, Cost can be reduced.

The light emitting device 300 of another embodiment may include a reflector 120 that reflects a target wavelength of a critical angle or less in the light traveling from the light emitting structure 350 to the substrate 100 to improve luminous efficiency.

The light emitting device 300 of another embodiment may include a reflection unit 120 that reflects a target wavelength of a critical angle or less in the light traveling in the direction of the substrate 100, thereby improving internal quantum efficiency.

The light emitting device 300 of another embodiment may have a half-width (FWHM) of 20 nm or less and a reflectance of 70% or more at a target wavelength reflected from the reflector 120. Therefore, the light emitting device 300 of the embodiment can improve the reliability of realizing light of a specific wavelength.

8 is a view showing a backlight unit including the light emitting device of the embodiment.

8 is a perspective view showing the backlight unit of the embodiment.

8, the liquid crystal display device 1100 includes a liquid crystal display panel 1110, a backlight unit for providing light to the liquid crystal display panel 1110, a guide panel 1180, an upper cover 1120, And a bottom cover 1130.

The liquid crystal display panel 1110 may include an upper substrate 1113 and a lower substrate 1111. The liquid crystal display panel 1110 may include a liquid crystal layer (not shown) between the upper substrate 1113 and the lower substrate 1111 and may be connected to the lower substrate 1111 A printed circuit board (not shown) that provides a signal, and may include a polarizing sheet.

In the liquid crystal display panel 1110, liquid crystal cells constituting a pixel unit are arranged in a matrix form, and liquid crystal cells control an optical transmittance according to image signal information transmitted from a driving PCB, thereby displaying an image.

In the lower substrate 1111, a plurality of gate lines and a plurality of data lines may be arranged in a matrix, and a thin film transistor (TFT) may be arranged in a crossing region between the gate lines and the data lines.

The upper substrate 1113 may include a color filter, but is not limited thereto.

The upper cover 1120 may be disposed on the upper edge of the liquid crystal display panel 1110 and may be coupled to the guide panel 1180.

The bottom cover 1130 may have an open top surface. The bottom cover 1130 may be fastened to the guide panel 1180. For example, the bottom cover 1130 may be fastened to the guide panel 1180 by a hook fastening structure, a screw fastening structure, or the like.

The guide panel 1180 may have a rectangular frame shape. The guide panel 1180 may support or accommodate the liquid crystal display panel 1110 and the backlight unit. To this end, the guide panel 1180 may include a stepped structure, a protruding structure, and a groove structure.

The backlight unit may include a light guide plate 1140, a light source unit, optical sheets 1150, and a reflective sheet 1160.

The light source unit may include a circuit board 201 and a light emitting unit 200. The light emitting unit 200 may employ the technical features of the light emitting device of FIGS. However, the present invention is not limited to this, and a direct-type backlight unit in which a plurality of light emitting elements are disposed directly under the liquid crystal display panel 1110 Lt; / RTI &gt;

The backlight unit of the embodiment may include a plurality of light emitting elements connected in parallel or series-parallel to improve the lighting failure.

9 is a diagram showing an illumination system including the light emitting device of the embodiment.

9, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, a socket 2800, . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device according to an embodiment of the present invention.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250. The light source module 2200 may include a light emitting unit including light emitting devices connected in parallel or series and parallel, and the light emitting unit may employ the technical features of the light emitting units of FIGS.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide holes 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted. The guide hole 2310 corresponds to the substrate of the light source unit 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 closes the receiving hole 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in a receiving hole 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500. The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension portion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the extension portion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800 .

The light emitting device according to the embodiment can be applied not only to the lighting device but also to an indicating device, a lamp, a streetlight, a vehicle lighting device, a vehicle display device, a smart watch, and the like, but is not limited thereto.

The light emitting device including the substrate according to the embodiment can be applied to a medical device, a lighting unit, a pointing device, a lamp, a streetlight, a vehicle lighting device, a vehicle display device, a smart watch, but is not limited thereto.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

100: substrate
101P: concave and convex structure
101: growth substrate
110: first semiconductor layer
120:
121a to 121g:
123a to 123g: second layer
130: second semiconductor layer
200: light emitting element
150, 350: light emitting structure

Claims (13)

A growth substrate having a concave-convex structure on the top;
A first semiconductor layer covering the concave-convex structure on the growth substrate; And
And a reflective portion disposed on the first semiconductor layer and having a refractive index of 2.14 or greater, the first and second layers being 7 to 30 pairs alternating.
The method according to claim 1,
Wherein the reflective portion reflects a target wavelength, the target wavelength is at least one of a wavelength having a peak at 470 nm to 490 nm, a wavelength having a peak at 510 nm to 530 nm, an ultraviolet wavelength and an infrared wavelength.
The method according to claim 1,
Wherein each of the first and second layers comprises any one of GaN, AlN, and AlGaN.
The method according to claim 1,
And the refractive index of the reflective portion is 2.14 to 3.17.
The method according to claim 1,
The reflector reflects a blue wavelength having a peak wavelength at 470 nm to 490 nm,
Wherein the first layer is GaN, the second layer is Al _x Ga _1-x N (0 < x &lt; _{= 1} )
The thickness of each of the first layers is 48 nm to 150 nm,
And each of the second layers has a thickness of 50 nm to 170 nm.
The method according to claim 1,
The reflector reflects a green wavelength having a peak wavelength at 510 nm to 530 nm,
Wherein the first layer is GaN, the second layer is Al _x Ga _1-x N (0 < x &lt; _{= 1} )
The thickness of each of the first layers is 52 nm to 160 nm,
And each of the second layers has a thickness of 54 nm to 180 nm.
The method according to claim 1,
And the reflector has a reflectance of 70% or more.
The method according to claim 1,
Wherein an upper surface of the first semiconductor layer is disposed above a projected upper end of the concave-convex structure.
9. The method of claim 8,
Wherein a distance between an upper surface of the first semiconductor layer and a protruding upper end of the concave-convex structure is 5 占 퐉 or more.
The method according to claim 1,
And a second semiconductor layer disposed over the reflective portion.
11. A semiconductor device comprising: a substrate according to any one of claims 1 to 10;
A partition wall including a recess disposed on the substrate; And
And a light emitting structure disposed on the substrate and disposed in the recess.
12. The method of claim 11,
And a bonding layer disposed between the substrate and the light emitting structure.
12. The method of claim 11,
Wherein the light emitting structure includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer,
Wherein the first doped semiconductor layer is grown on the substrate and is in direct contact with the substrate.

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