KR20170122360A - Organic light emitting display device and method for manufacturing the same - Google Patents

Abstract

The present invention provides an organic light emitting display device including an organic light emitting layer having a uniform film thickness, and a manufacturing method thereof. According to an embodiment of the present invention, the organic light emitting display device comprises: a substrate; a thin film transistor disposed on the substrate, and including an active layer, a gate electrode, a source electrode, and a drain electrode; a first pixel electrode electrically connected to any one of the source electrode and the drain electrode, and including the same material as the gate electrode; a first pixel defining film covering an edge of the first pixel electrode, and including a first opening exposing an upper surface of the first pixel electrode; and a second pixel defining film disposed on the first pixel defining film, and including a second opening exposing the upper surface of the first pixel electrode. The width of the second opening is greater than the width of the first opening.

Description

[0001] The present invention relates to an organic light emitting display device and a method of manufacturing the same,

Embodiments of the present invention relate to an organic light emitting display and a method of manufacturing the same.

The organic light emitting display includes a hole injecting electrode, an electron injecting electrode, and an organic light emitting element including an organic light emitting layer formed therebetween, wherein holes injected from the hole injecting electrode and electrons injected from the electron injecting electrode are injected into the organic light emitting layer Emitting display device in which excitons generated by coupling drop from an excited state to a ground state to generate light.

Since the organic light emitting display device, which is a self-emission type display device, does not require a separate light source, it can be driven at a low voltage and can be configured as a lightweight and thin type. Since the viewing angle, contrast, And applications ranging from personal portable devices such as cellular phones to televisions (TVs). In recent years, organic light emitting display devices have been applied not only to rectangular shapes but also various shapes such as circular or elliptical shapes.

Recently, an organic light emitting layer is formed by a wet coating method such as inkjet, but the thickness of the organic light emitting layer is uneven.

Embodiments of the present invention provide an organic light emitting display including an organic light emitting layer having a uniform film thickness and a method of manufacturing the same.

One embodiment of the present invention provides a semiconductor device comprising: a substrate; A thin film transistor disposed on the substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; A first pixel electrode electrically connected to one of the source electrode and the drain electrode and including the same material as the gate electrode; A first pixel defining layer covering an edge of the first pixel electrode and including a first opening exposing an upper surface of the first pixel electrode; And a second pixel defining layer disposed on the first pixel defining layer and including a second opening exposing an upper surface of the first pixel electrode, wherein a width of the second opening is smaller than a width of the first opening Width of the organic light emitting display device.

In one embodiment of the present invention, the first pixel defining layer may include an insulating material of an inorganic material, and the second pixel defining layer may include an insulating material of an organic material.

In one embodiment of the present invention, the thin film transistor includes: a gate insulating film interposed between the active layer and the gate electrode; And an interlayer insulating layer interposed between the gate electrode and the source electrode and the drain electrode, wherein the interlayer insulating layer includes the same material as the first pixel defining layer.

According to an embodiment of the present invention, there is provided a liquid crystal display device including a storage capacitor having a first storage electrode, a dielectric layer, and a second storage electrode sequentially stacked, wherein the dielectric layer includes the same material as the first pixel defining layer .

In one embodiment of the present invention, the first storage electrode includes the same material as the gate electrode, and the second storage electrode includes the same material as the source electrode and the drain electrode.

In one embodiment of the present invention, the second thickness of the dielectric layer may be smaller than the first thickness of the first pixel defining layer.

In one embodiment of the present invention, an intermediate layer including an organic light emitting layer disposed on the first pixel electrode; And a counter electrode disposed on the intermediate layer.

In an embodiment of the present invention, the third thickness of the intermediate layer may be smaller than the first thickness of the first pixel defining layer.

In one embodiment of the present invention, the intermediate layer may be in non-contact with the second pixel defining layer.

The pixel electrode may further include a second pixel electrode disposed between the first pixel electrode and the intermediate layer and including the same material as the source electrode and the drain electrode.

In one embodiment of the present invention, the first thickness of the first pixel defining layer may be greater than the fifth thickness plus the third thickness of the intermediate layer and the fourth thickness of the second pixel electrode.

An embodiment of the present invention includes: forming an active layer of a thin film transistor on a substrate; Forming a gate insulating film covering the active layer, forming a first pixel electrode and a gate electrode of the thin film transistor on the gate insulating film; An interlayer insulating film including an interlayer insulating material covering the first pixel electrode and the gate electrode and a first contact hole exposing a source region and a drain region of the active layer by patterning the interlayer insulating material; Forming a first pixel defining layer including a first opening exposing an upper surface of the pixel electrode; Forming a source electrode and a drain electrode on the interlayer insulating film, the source electrode and the drain electrode being in contact with the source region and the drain region of the active layer through the first contact hole, respectively; And a second pixel defining layer including a second opening exposing an upper surface of the first pixel electrode, wherein the width of the second opening is larger than the width of the first opening, Of the present invention.

In one embodiment of the present invention, the first pixel defining layer may include an insulating material of an inorganic material, and the second pixel defining layer may include an insulating material of an organic material.

The step of forming the interlayer insulating layer may further include forming a second contact hole exposing a part of the first pixel electrode in the interlayer insulating layer, Drain electrode may be electrically connected to the first pixel electrode through the second contact hole.

In one embodiment of the present invention, forming the first pixel electrode and the gate electrode further comprises forming a first storage electrode of the storage capacitor, wherein forming the source electrode and the drain electrode comprises: And forming a second storage electrode of the storage capacitor.

In one embodiment of the present invention, the dielectric layer of the storage capacitor may be a part of the interlayer insulating film, and the first thickness of the first pixel defining layer may be larger than the second thickness of the dielectric layer.

According to an embodiment of the present invention, the method may further include forming an intermediate layer disposed on the first pixel electrode and including an organic light emitting layer; And forming an opposite electrode on the intermediate layer, wherein a third thickness of the intermediate layer may be smaller than a first thickness of the first pixel defining layer.

Forming a second pixel electrode between the first pixel electrode and the intermediate layer in the step of forming the second pixel electrode, May be performed in the same mask process as the forming process.

In one embodiment of the present invention, the first thickness of the first pixel defining layer may be greater than the fifth thickness plus the third thickness of the intermediate layer and the fourth thickness of the second pixel electrode.

Other aspects, features, and advantages will become apparent from the following drawings, claims, and detailed description of the invention.

The organic light emitting display according to embodiments of the present invention and the method of fabricating the same can form an intermediate layer having a uniform film thickness by using a first pixel defining layer including an insulating material of an inorganic material, Can be implemented.

1 is a plan view schematically showing an organic light emitting diode display according to an embodiment of the present invention.
2 is a cross-sectional view taken along line II-II 'of FIG.
3 is a cross-sectional view schematically illustrating an organic light emitting display according to another embodiment of the present invention.
4 to 9 are sectional views sequentially illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention and methods of achieving them will be apparent with reference to the embodiments described in detail below with reference to the drawings. However, the present invention is not limited to the embodiments described below, but may be implemented in various forms.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals refer to like or corresponding components throughout the drawings, and a duplicate description thereof will be omitted .

In the following embodiments, the terms first, second, and the like are used for the purpose of distinguishing one element from another element, not the limitative meaning.

In the following examples, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise.

In the following embodiments, terms such as inclusive or possessive are intended to mean that a feature, or element, described in the specification is present, and does not preclude the possibility that one or more other features or elements may be added.

In the following embodiments, when a part of a film, an area, a component or the like is on or on another part, not only the case where the part is directly on the other part but also another film, area, And the like.

In the drawings, components may be exaggerated or reduced in size for convenience of explanation. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and thus the present invention is not necessarily limited to those shown in the drawings.

If certain embodiments are otherwise feasible, the particular process sequence may be performed differently from the sequence described. For example, two processes that are described in succession may be performed substantially concurrently, and may be performed in the reverse order of the order described.

In the following embodiments, when a film, an area, a component, or the like is referred to as being connected, not only the case where the film, the region, and the components are directly connected but also the case where other films, regions, And indirectly connected. For example, in the present specification, when a film, an area, a component, and the like are electrically connected, not only a case where a film, an area, a component, etc. are directly electrically connected but also another film, And indirectly connected electrically.

1 is a plan view schematically showing an organic light emitting diode display 10 according to an embodiment of the present invention.

Referring to FIG. 1, the OLED display 10 includes a display area DA for displaying an image, and a non-display area NDA adjacent to the display area DA. The display area DA includes a plurality of pixel areas PA, and pixels for emitting predetermined light are formed for each pixel area PA. An image is provided through the light emitted by the plurality of pixels provided in the display area DA.

The non-display area NDA may be arranged to surround the display area DA and may include a scan driver (not shown) and a data driver (not shown) for transmitting a predetermined signal to a plurality of pixels provided in the display area DA And the like.

Although the non-display area NDA surrounds the display area in FIG. 1, the present invention is not limited thereto. As another embodiment, the non-display area NDA may be disposed on one side of the display area to reduce an area where an image is not displayed, i.e., a dead area.

2 is a cross-sectional view taken along line II-II 'of FIG.

2, an organic light emitting diode display 10 according to an exemplary embodiment of the present invention includes a substrate 100, a thin film transistor (TFT), a first pixel electrode 135, a first pixel defining layer 143, And a second pixel defining layer 107 may be included.

The substrate 100 may be formed of not only a glass substrate but also a plastic substrate including PET (polyethylene terephthalate), PEN (polyethylenenaphthalate), and polyimide. According to one embodiment, the substrate 100 may comprise a substrate 100 of a flexible material. Here, the substrate 100 of flexible material refers to a substrate that is bent, bent, and folded or spun. The flexible substrate 100 may be made of ultra-thin glass, metal, or plastic.

A buffer layer 101 may be further provided on the substrate 100 to block the smoothness of the substrate 100 and the penetration of impurity elements from the substrate 100. The buffer layer 101 may be a single layer or a plurality of layers of silicon nitride and / or silicon oxide. A thin film transistor (TFT) may be disposed on the display region DA of the buffer layer 101. [ A barrier layer (not shown) may be further disposed between the substrate 100 and the buffer layer 101, and the buffer layer 101 may be omitted if necessary.

The thin film transistor TFT may function as a part of a driving circuit portion for driving the organic light emitting element OLED. The driving circuit unit may further include a storage capacitor Cst and a wiring (not shown) in addition to the thin film transistor TFT.

The thin film transistor TFT includes an active layer 121 disposed on the buffer layer 101, a gate electrode 131 disposed on at least a part of the active layer 121, a source electrode 152 to which a data signal is applied, And a drain electrode 151 electrically connected to the pixel electrode 135. A gate insulating layer 103 is disposed between the active layer 121 and the gate electrode 131 and a gate electrode 131 and a source electrode 152 and the drain electrode 151 may be disposed.

The active layer 121 includes a semiconductor material and may include, for example, amorphous silicon or poly crystalline silicon. However, the present invention is not limited thereto, and the active layer 121 according to another embodiment may include an organic semiconductor material or an oxide semiconductor material.

The gate electrode 131 may be connected to a gate wiring (not shown) for applying an on / off signal to the thin film transistor TFT, and may be made of a low resistance metal material. For example, the gate electrode 131 may be formed of a metal such as Al, Pt, Pd, Ag, Mg, Au, Ni, Ne, Layered or multi-layered with at least one metal selected from iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) .

In another embodiment, the gate electrode 131 may be formed as a multilayer including a lower layer (not shown) containing a transparent conductive oxide and an upper layer (not shown) containing a low resistance metal. At this time, the lower layer (not shown) may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In ₂ O ₃ ) , Indium gallium oxide (IGO), and aluminum zinc oxide (AZO) may be included in the transparent conductive oxide. The top layer (not shown) may comprise a low resistance metal material as described above.

The source electrode 152 and the drain electrode 151 may be a single film or a multilayer film made of a conductive material having a good conductivity and may be formed through a first contact hole Cnt1 penetrating the gate insulating film 103 and the interlayer insulating film 105 And may be connected to the source region and the drain region of the active layer 121, respectively. The source electrode 152 and the drain electrode 151 may be formed of a metal such as Al, Pt, Pd, Ag, Mg, Au, Ni, , At least one metal selected from the group consisting of neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten Or may be formed as a single layer or multiple layers.

The thin film transistor (TFT) according to one embodiment is a top gate type in which the gate electrode 131 is disposed on the upper portion of the active layer 121, but the present invention is not limited thereto, (TFT) may be a bottom gate type in which the gate electrode 131 is disposed under the active layer 121. [

The gate insulating film 103 and the interlayer insulating film 105 may be a single film or a multiple film composed of an inorganic material such as silicon oxide (SiO ₂ ), silicon nitride (SiN _x ), silicon oxynitride (SiON) (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), tantalum oxide (Ta ₂ O ₅ ), hafnium oxide (HfO ₂ ), and / or zinc oxide (ZrO ₂ ).

The buffer layer 101, the gate insulating film 103 and the interlayer insulating film 105 can extend not only to the display area DA but also to a part of the non-display area NDA. According to one embodiment, the buffer layer 101, the gate insulating film 103, and the interlayer insulating film 105 may be disposed on the remaining region except the outermost edge region of the substrate 100.

A first pixel electrode 135 electrically connected to the thin film transistor TFT may be disposed on the gate insulating film 103 through a second contact hole Cnt2 included in the interlayer insulating film 105. [ The first pixel electrode 135 may be electrically connected to one of the source electrode 152 and the drain electrode 151. The first pixel electrode 135 according to one embodiment is electrically connected to the drain electrode 151 but the present invention is not limited thereto and the first pixel electrode 135 according to another embodiment may include the source electrode 152, As shown in FIG.

The first pixel electrode 135 is disposed on the same layer as the gate electrode 131 and may include the same material. The first pixel electrode 135 may be formed of a metal such as aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W), and copper (Cu).

In another embodiment, the first pixel electrode 135 may be formed of a material having a high work function, and may be indium tin oxide (ITO; indium tin oxide, indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In ₂ O ₃ ), indium gallium oxide (IGO) And at least one of the transparent conductive oxides selected from the group including zinc oxide (AZO). Unlike the gate electrode 131, the first pixel electrode 135 may be formed only by a lower layer (not shown) of the gate electrode 131, and the upper layer (not shown) may be removed. In the present invention, there is no limitation on the back emission or the front emission, but the following description will focus on the case where the first pixel electrode 135 is the front emission for convenience of explanation.

The first pixel defining layer 143 may cover the edge of the first pixel electrode 135 and may include a first opening A 1 exposing the top surface of the first pixel electrode 135. The first pixel defining layer 143 covers the edge region of the first pixel electrode 135 and isolates the first pixel electrode 135 and the counter electrode 175 from each other. On the other hand, the first pixel defining layer 143 may include an insulating material of an inorganic material. The first pixel defining layer 143 may include the same material as the interlayer insulating layer 105 and may be formed of a material such as silicon oxide (SiO ₂ ), silicon nitride (SiN _x ), silicon oxynitride (SiON) (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), tantalum oxide (Ta ₂ O ₅ ), hafnium oxide (HfO ₂ ), and / or zinc oxide (ZrO ₂ ).

The second pixel defining layer 107 may be disposed on the first pixel defining layer 143 and may include a second opening A 2 exposing the upper surface of the first pixel defining layer 143. The second pixel defining layer 107 may be a photosensitive organic layer including an insulating material of an organic material, and may include, for example, polyimide (PI). The second opening A2 may be disposed to overlap with the first opening A1 of the first pixel defining layer 143 to expose the upper surface of the first pixel electrode 135. [ The width W2 of the second opening A2 may be larger than the width W1 of the first opening A1. Accordingly, the second pixel defining layer 107 can expose the edge of the first pixel defining layer 143. [ In other words, the first pixel defining layer 143 protrudes from the second pixel defining layer 107 toward the first pixel electrode 135 through the second opening A2 having a width wider than the first opening A1 Structure.

Meanwhile, an intermediate layer 165 including an organic light emitting layer may be disposed on the exposed upper surface of the first pixel electrode 135.

The intermediate layer 165 may include a hole injection layer in addition to the intermediate layer 165 between the first pixel electrode 135 and the counter electrode 175, At least one of a hole transport layer, an electron transport layer, and an electron injection layer may be further disposed. According to one embodiment, other various functional layers may be disposed between the first pixel electrode 135 and the counter electrode 175 in addition to the above-described layers.

The intermediate layer 165 may be formed through a printing method such as inkjet, nozzle, or the like. At this time, the third thickness d3 of the intermediate layer 165 may be smaller than the first thickness d1 of the first pixel defining layer 143. In other words, the intermediate layer 165 may be in contact with the first pixel defining layer 143 including the insulating material of the inorganic material, but not the second pixel defining layer 107 including the insulating material of the organic material.

The organic light emitting display according to the comparative example of the present invention includes only a pixel defining layer including an insulating material of an organic material. In the case of a pixel defining layer containing an insulating material of an organic material, the surface energy differs from that of the intermediate layer. At this time, if the intermediate layer is formed by a printing method such as an ink jet or a nozzle, a phenomenon that the intermediate layer rises along the surface of the sidewall of the pixel defining layer occurs, and there is a problem that the intermediate layer material can not be overflowed or a uniform film thickness can not be maintained .

Meanwhile, the OLED display 10 according to an embodiment of the present invention includes a first pixel defining layer 143 including an insulating material of an inorganic material, and a second pixel defining layer 107 including an insulating material of an organic material And the intermediate layer 165 is not in contact with the second pixel defining layer 107, it is possible to prevent the overflow failure of the intermediate layer 165 material. In particular, since the first pixel defining layer 143 includes an insulating material of inorganic material having a surface energy similar to that of the intermediate layer 165, it is possible to prevent the intermediate layer 165 from rising along the sidewalls of the pixel defining layer, Lt; RTI ID = 0.0 > 165 < / RTI >

In this case, depending on the type of the organic light emitting layer included in the organic light emitting device OLED, the organic light emitting device OLED may be formed of a material selected from the group consisting of mullite, And blue light, respectively. However, the present invention is not limited thereto, and a plurality of organic light emitting layers may be disposed in one organic light emitting diode (OLED). For example, a plurality of organic light emitting layers emitting red, green, and blue light may be vertically stacked or mixed to form white light. In this case, a color conversion layer or a color filter may be further provided for converting the emitted white light into a predetermined color. The red, green, and blue colors are illustrative, and combinations of colors for emitting white light are not limited thereto.

The counter electrode 175 is disposed on the intermediate layer 165, and the counter electrode 175 may be formed of various conductive materials. For example, the counter electrode 175 may include at least one selected from the group consisting of lithium (Li), calcium (Ca), lithium fluoride (LiF), aluminum (Al), magnesium (Mg) And may be formed as a single layer or multiple layers. In the case of the bottom emission type, the counter electrode 175 may be a reflective electrode, and in the case of a top emission type, the counter electrode 175 may be a light-transmitting electrode.

The OLED display 10 may further include a storage capacitor Cst having a first storage electrode 133, a dielectric layer 141 and a second storage electrode 153 sequentially stacked.

The first storage electrode 133 may be disposed on the same layer as the gate electrode 131 and may be disposed on the gate insulating layer 103 and may include the same material as the gate electrode 131 and the pixel electrode 135 .

The second storage electrode 153 may be disposed on the same layer as the source electrode 152 and the drain electrode 151 and may be disposed on the interlayer insulating film 105 and may be the same as the source electrode 152 and the drain electrode 151 ≪ / RTI >

The dielectric layer 141 interposed between the first storage electrode 133 and the second storage electrode 153 may include the same material as the first pixel defining layer 143 and the interlayer insulating layer 105. In one embodiment, the second thickness d2 of the dielectric layer 141 may be equal to the first thickness d1 of the first pixel defining layer 143. However, the present invention is not limited to this, and the capacitance of the storage capacitor Cst is determined by the first thickness d1 of the dielectric layer 141, so that the second thickness d2 of the dielectric layer 141 is smaller than the second thickness d2, May be less than the first thickness (d1) of the first portion (143).

3 is a cross-sectional view schematically showing an organic light emitting diode display 10 according to another embodiment of the present invention.

3, an OLED display 10 according to another exemplary embodiment of the present invention includes a substrate 100, a thin film transistor (TFT), a first pixel electrode 135, a second pixel electrode 155, A pixel defining layer 143 and a second pixel defining layer 107. Other elements of the present invention are the same as those of the first embodiment except for the second pixel electrode 155, so that a duplicate description will be omitted. Like reference numerals refer to like elements throughout the drawings.

The substrate 100 may be formed of not only a glass substrate but also a plastic substrate including PET (polyethylene terephthalate), PEN (polyethylenenaphthalate), and polyimide.

The thin film transistor TFT may function as a part of a driving circuit portion for driving the organic light emitting element OLED. The driving circuit unit may further include a storage capacitor Cst and a wiring (not shown) in addition to the thin film transistor TFT. The thin film transistor (TFT) may include an active layer 121, a gate electrode 131, a source electrode 152, and a drain electrode 151.

The first pixel electrode 135 is disposed on the same layer as the gate electrode 131 and may include the same material. The first pixel defining layer 143 may cover the edge of the first pixel electrode 135 and may include a first opening A 1 exposing the top surface of the first pixel electrode 135. The second pixel defining layer 107 may be disposed on the first pixel defining layer 143 and may include a second opening A 2 exposing the upper surface of the first pixel defining layer 143.

The second pixel electrode 155 is disposed between the first pixel electrode 135 and the intermediate layer 165 and may include the same material as the source electrode 152 and the drain electrode 151. The second pixel electrode 155 may be formed of, for example, aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium ) Or at least one metal selected from iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) As shown in FIG.

The first thickness d1 of the first pixel defining layer 143 may be greater than the thickness of the second pixel defining layer 107 of the intermediate layer 165. In this case, The third thickness d3 of the intermediate layer 165 and the fourth thickness d4 of the second pixel electrode 155 may be greater than the fifth thickness d3 + d4. The second thickness d2 of the dielectric layer 141 may be smaller than the first thickness d1 of the first pixel defining layer 143 in order to secure a sufficient capacity of the storage capacitor Cst.

The organic light emitting diode display 10 according to another embodiment of the present invention further includes the second pixel electrode 155 on the first pixel electrode 135, The surface of the first pixel electrode 135 damaged by the first pixel electrode 135 can be flattened. Therefore, the thickness of the intermediate layer 165 disposed over the second pixel electrode 155 can be more uniformly maintained.

Hereinafter, a method of manufacturing the OLED display 10 will be described with reference to FIGS. 4 to 9, focusing on the case where the second pixel electrode 155 is included for convenience of description.

4 to 9 are sectional views sequentially illustrating a method of manufacturing the organic light emitting diode display 10 according to an embodiment of the present invention.

Referring to FIG. 4, an active layer 121 of a thin film transistor (TFT) may be formed on a substrate 100. A buffer layer 101 may be further provided on the substrate 100 to block the smoothness of the substrate 100 and the penetration of impurity elements from the substrate 100. The active layer 121 includes a semiconductor material and may include, for example, amorphous silicon or poly crystalline silicon. However, the present invention is not limited thereto, and the active layer 121 according to another embodiment may include an organic semiconductor material or an oxide semiconductor material.

5, a gate insulating layer 103 and a first conductive material (not shown) are sequentially formed to cover the active layer 121, and then the first conductive material is patterned to form the first pixel electrode 135, Thereby forming the gate electrode 131 of the thin film transistor TFT. On the other hand, the first storage electrode 133 of the storage capacitor Cst can also be formed in the same process.

The first conductive material (not shown) may be formed of a metal such as aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten Or may be formed in multiple layers.

In another embodiment, the first conductive material (not shown) may be formed as a multilayer including a lower layer (not shown) comprising a transparent conductive oxide and an upper layer (not shown) including a low resistance metal. At this time, the lower layer (not shown) may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In ₂ O ₃ ) , Indium gallium oxide (IGO), and aluminum zinc oxide (AZO) may be included in the transparent conductive oxide. The top layer (not shown) may comprise a low resistance metal material as described above. At this time, the patterned gate electrode 131 may include both an upper layer (not shown) and a lower layer (not shown), but the first pixel electrode 135 is formed by removing the upper layer (not shown) .

Referring to FIG. 6, an interlayer insulating material (not shown) covering the first pixel electrode 135, the gate electrode 131, and the first storage electrode 133 is formed. Insulating material (not shown) may makil single film or multiple consisting of inorganic materials such as silicon oxide (SiO _2), silicon nitride (SiN _x), silicon oxynitride (SiON), aluminum oxide (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), tantalum oxide (Ta ₂ O ₅ ), hafnium oxide (HfO ₂ ), and / or zinc oxide (ZrO ₂ ).

Thereafter, an interlayer insulating layer 105 including a first contact hole Cnt1 exposing both sides of the active layer 121, that is, a source region and a drain region, may be formed by patterning an interlayer insulating material (not shown). At the same time, the first pixel defining layer 143 including the first opening A1 for exposing the upper surface of the first pixel electrode 135 can be formed. The interlayer insulating layer 105 and the first pixel defining layer 143 are formed by the same process and may include the same material. In addition, the first contact hole Cnt1 and the first opening A1 can be formed by the same mask process. At this time, the interlayer insulating material formed on the first storage electrode 133 may function as the dielectric layer 141.

The first thickness d1 of the first pixel defining layer 143 should be greater than the thickness of the intermediate layer 165 and the second pixel electrode 155 to be described later. It should not be too thick. The first thickness d1 of the first pixel defining layer 143 may be greater than the second thickness d2 of the dielectric layer 141. [ The first pixel defining layer 143 and the dielectric layer 141 having different thicknesses can be formed by using a mask including a light control portion such as a halftone or a slit on the same interlayer insulating material. The first thickness d1 of the first pixel defining layer 143 may be the same as the second thickness d2 of the dielectric layer 141. [

Meanwhile, a second contact hole Cnt2 may be formed by patterning the interlayer insulating material (not shown) to expose a part of the upper surface of the first pixel electrode 135 in the interlayer insulating layer 105. [

Referring to FIG. 7, a second conductive material (not shown) is formed on the interlayer insulating film 105. The second conductive material (not shown) may be formed of, for example, aluminum, platinum, palladium, silver, magnesium, gold, neodymium, Nd, Ir, Cr, Li, Ca, Mo, Ti, W, and Cu. And may be formed in multiple layers.

 The second pixel electrode 155, the second storage electrode 153, the source electrode 152, and the drain electrode 151 may be formed by patterning a second conductive material (not shown). The source electrode 152 and the drain electrode 151 can be in contact with the source region and the drain region of the active layer 121 through the first contact hole Cnt1, respectively. In addition, any one of the source electrode 152 and the drain electrode 151 may be electrically connected to the first pixel electrode 135 through the second contact hole Cnt2.

The second pixel electrode 155 may be disposed on the first pixel electrode 135 and may be disposed on the first opening A 1 of the first pixel defining layer 143. The second pixel electrode 155 may function to flatten the surface of the first pixel electrode 135 damaged by an etching process after the first pixel electrode 135 is formed.

Referring to FIG. 8, a second pixel defining layer 107 including a second opening A2 for exposing an upper surface of the first pixel electrode 135 may be formed. Since the second pixel electrode 155 is disposed on the first pixel electrode 135, the second opening A 2 exposes the upper surface of the second pixel electrode 155. The second opening A2 may be formed to overlap with the first opening A1. The center of the second opening A2 may coincide with or be adjacent to the center of the first opening A1 and the width W2 of the second opening A2 is greater than the width W1 of the first opening A1 . Accordingly, the first pixel defining layer 143 may have a protruding structure in which the edge of the first opening A1 is also exposed due to the second opening A2. On the other hand, the second pixel defining layer 107 may be a photosensitive organic layer containing an insulating material of an organic material, and may include, for example, polyimide (PI).

9, an intermediate layer 165 disposed on the first pixel electrode 135 and including an organic light emitting layer is formed, and then an opposite electrode 175 is formed on the intermediate layer 165 to form an organic light emitting device OLED ) Can be formed. The counter electrode 175 may be formed only in the display area DA and not in the non-display area NDA.

The intermediate layer 165 may be disposed on the second pixel electrode 155 because the second pixel electrode 155 is disposed on the first pixel electrode 135 as an example. The first thickness d1 of the first pixel defining layer 143 may be greater than the third thickness d3 of the intermediate layer 165. Specifically, The fourth thickness d4 of the two pixel electrodes 155 may be greater than the fifth thickness d3 + d4.

As described above, the organic light emitting diode display 10 according to one embodiment uses the first pixel defining layer 143 including the insulating material of the inorganic material to form the intermediate layer 165 having a uniform film thickness, High-quality display can be realized without additional process.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: organic light emitting display device.
100: substrate
101: buffer layer
103: Gate insulating film
105: interlayer insulating film
107: second pixel defining film
143: first pixel defining film
141: dielectric layer
121:
131: gate electrode
151: drain electrode
152: source electrode
135: first pixel electrode
155: second pixel electrode
165: Middle layer
175: counter electrode

Claims (19)

Board;
A thin film transistor disposed on the substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode;
A first pixel electrode electrically connected to one of the source electrode and the drain electrode and including the same material as the gate electrode;
A first pixel defining layer covering an edge of the first pixel electrode and including a first opening exposing an upper surface of the first pixel electrode; And
And a second pixel defining layer disposed on the first pixel defining layer and including a second opening exposing an upper surface of the first pixel electrode,
And the width of the second opening is larger than the width of the first opening. The method according to claim 1,
Wherein the first pixel defining layer includes an insulating material of an inorganic material,
Wherein the second pixel defining layer comprises an insulating material of an organic material. The method according to claim 1,
The thin-
A gate insulating film interposed between the active layer and the gate electrode; And
And an interlayer insulating film interposed between the gate electrode and the source electrode and the drain electrode,
Wherein the interlayer insulating layer includes the same material as the first pixel defining layer. The method of claim 3,
And a storage capacitor having a first storage electrode, a dielectric layer, and a second storage electrode which are sequentially stacked,
Wherein the dielectric layer includes the same material as the first pixel defining layer. 5. The method of claim 4,
Wherein the first storage electrode comprises the same material as the gate electrode,
Wherein the second storage electrode comprises the same material as the source electrode and the drain electrode. 5. The method of claim 4,
Wherein the second thickness of the dielectric layer is smaller than the first thickness of the first pixel defining layer. The method according to claim 1,
An intermediate layer disposed on the first pixel electrode and including an organic light emitting layer; And
And an opposing electrode disposed on the intermediate layer. 8. The method of claim 7,
And the third thickness of the intermediate layer is smaller than the first thickness of the first pixel defining layer. 8. The method of claim 7,
Wherein the intermediate layer is not in contact with the second pixel defining layer. 8. The method of claim 7,
And a second pixel electrode disposed between the first pixel electrode and the intermediate layer and including the same material as the source electrode and the drain electrode. 11. The method of claim 10,
Wherein a first thickness of the first pixel defining layer is greater than a fifth thickness plus a third thickness of the intermediate layer and a fourth thickness of the second pixel electrode. Forming an active layer of a thin film transistor on a substrate;
Forming a gate insulating film covering the active layer, forming a first pixel electrode and a gate electrode of the thin film transistor on the gate insulating film;
An interlayer insulating film including an interlayer insulating material covering the first pixel electrode and the gate electrode and a first contact hole exposing a source region and a drain region of the active layer by patterning the interlayer insulating material; Forming a first pixel defining layer including a first opening exposing an upper surface of the pixel electrode;
Forming a source electrode and a drain electrode on the interlayer insulating film, the source electrode and the drain electrode being in contact with the source region and the drain region of the active layer through the first contact hole, respectively; And
And forming a second pixel defining layer including a second opening exposing an upper surface of the first pixel electrode,
Wherein a width of the second opening is larger than a width of the first opening. 13. The method of claim 12,
Wherein the first pixel defining layer includes an insulating material of an inorganic material,
Wherein the second pixel defining layer comprises an insulating material of an organic material. 13. The method of claim 12,
Wherein forming the interlayer insulating film further includes forming a second contact hole exposing a part of the first pixel electrode in the interlayer insulating film,
Wherein one of the source electrode and the drain electrode is electrically connected to the first pixel electrode through the second contact hole. 13. The method of claim 12,
Wherein forming the first pixel electrode and the gate electrode further comprises forming a first storage electrode of the storage capacitor,
Wherein the forming the source electrode and the drain electrode further comprises forming a second storage electrode of the storage capacitor. 16. The method of claim 15,
Wherein a dielectric layer of the storage capacitor is formed as a part of the interlayer insulating film,
Wherein the first thickness of the first pixel defining layer is greater than the second thickness of the dielectric layer. 13. The method of claim 12,
Forming an intermediate layer disposed on the first pixel electrode and including an organic light emitting layer; And
And forming an opposite electrode on the intermediate layer,
Wherein the third thickness of the intermediate layer is smaller than the first thickness of the first pixel defining layer. 18. The method of claim 17,
And forming a second pixel electrode between the first pixel electrode and the intermediate layer,
Wherein the step of forming the second pixel electrode is performed in the same mask process as the step of forming the source electrode and the drain electrode. 19. The method of claim 18,
Wherein a first thickness of the first pixel defining layer is greater than a fifth thickness plus a third thickness of the intermediate layer and a fourth thickness of the second pixel electrode.

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