KR20170119182A - Uv dicing film for semiconductor package having surface resistance - Google Patents

Uv dicing film for semiconductor package having surface resistance Download PDF

Info

Publication number
KR20170119182A
KR20170119182A KR1020160047026A KR20160047026A KR20170119182A KR 20170119182 A KR20170119182 A KR 20170119182A KR 1020160047026 A KR1020160047026 A KR 1020160047026A KR 20160047026 A KR20160047026 A KR 20160047026A KR 20170119182 A KR20170119182 A KR 20170119182A
Authority
KR
South Korea
Prior art keywords
sensitive adhesive
pressure
adhesive layer
film
layer
Prior art date
Application number
KR1020160047026A
Other languages
Korean (ko)
Inventor
김영욱
이정우
류효곤
Original Assignee
도레이첨단소재 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도레이첨단소재 주식회사 filed Critical 도레이첨단소재 주식회사
Priority to KR1020160047026A priority Critical patent/KR20170119182A/en
Publication of KR20170119182A publication Critical patent/KR20170119182A/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/40—Adhesives in the form of films or foils characterised by release liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

Abstract

The present invention relates to a UV curable dicing film for a semiconductor package having a surface resistance characteristic.
In the dicing film of the present invention, the pressure-sensitive adhesive layer and the releasing layer for protecting the pressure-sensitive adhesive are sequentially laminated on at least one surface of the base film layer, and the pressure-sensitive adhesive layer is formed of an acrylic resin, a polyisocyanate-based curing agent, a phenylglyoxylate-based photoinitiator, By incorporating an antistatic additive and curing by thermal curing or energy ray forwarding, the wafer pattern short-circuiting phenomenon due to the generation of static electricity does not occur in the pick-up process during the semiconductor packaging process to which the wafer is applied, , Excellent pick-up properties after UV irradiation, and minimization of static electricity generation.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a UV curable dicing film for a semiconductor package,

The present invention relates to a UV curable dicing film for a semiconductor package having a surface resistance characteristic, and more particularly, to a UV curable dicing film for a semiconductor package having a surface resistance characteristic, A photoresist composition containing a polyisocyanate-based curing agent, a phenylglyoxylate-based photoinitiator and an optimal amount of an ionic antistatic additive and curing by thermal curing or energy ray casting, Curing type dicing film for a semiconductor package having a surface resistance characteristic that does not cause a short-circuit phenomenon, does not cause peeling failure when adhered to a wafer, has excellent pick-up properties after UV irradiation, and minimizes the generation of static electricity.

With the recent advances in IT technology, chipmakers are increasingly using thinner wafers and thinner wafers are becoming thinner and thinner. These changes in production are mainly driven by mobile computing and wireless communications such as flash memory and multi-chip memory devices.

Among the factors that have the greatest influence on the yield in a process using a thin wafer is a pick-up process for picking up wafer dicing and diced chips. In addition, due to the characteristics of the semiconductor product itself, it is a very weak element for electrostatic discharge, so it is generated in all processes from the production stage to the handling stage and has a great influence on the yield of the process.

In recent years, packaging devices have become more complex, such as packages containing more than one chip or die, making yield problems more relevant to the overall packaging process. Process steps have become much more complex than ever before, including more back grinding to thin the wafer below 100 μm, stress removal steps, new wire bonding technology for multilevel chips, testing steps and thinner packaging form factors. In addition, these processes become more complex and interrelated as the die becomes thinner and the package has more functionality in a smaller footprint. In addition, the shape of the pattern formed on the die becomes complicated and thin, so that the device is broken due to the generation of fine static electricity, thereby increasing the defect rate and lowering the overall productivity.

Therefore, a dicing film having a surface resistance characteristic is required in order to reduce the occurrence rate of defects in a thin wafer application and a fine precision pattern of a die.

Recently, the use of thin wafer dicing has increased and additional issues have been emerging that affect device yield, such as wafer thickness reduction, use of die-attach films (DAF), and increased emphasis on die strength.

The ability to clean the DAF and silicon cleanly provides a significant advantage of lasers over traditional dicing methods for processing thin wafers, as DAF is an essential addition to the process. In fact, this maintains die planarity during die attach, but the purpose of lamination is to insert more chips into a thinner package, thus also providing a die attach layer.

Generally, the thickness of the DAF is about 10 to 40 mu m and attached to the thin wafer after back grinding and stress relief before dicing. A reasonable choice depends on the cost, which is much simpler and cheaper than applying a tape to a diced device by applying a uniform tape across the wafer.

The dicing pressure sensitive adhesive used in the step of picking up the DAF, which is laminated with the wafer, generally uses a UV-curable and non-UV pressure-sensitive adhesive. The UV curable dicing pressure- The adhesive strength is maintained high before the UV irradiation, so that the adhesion between the wafer and the adhesive film due to the excellent interface adhesion with the adhesive does not cause defective peeling or lamination failure during the laminating operation and does not cause problems such as chip fly and crack in the dicing process .

In addition, since the adhesive strength of the pressure-sensitive adhesive layer after UV irradiation is lower than that of the non-UV dicing pressure-sensitive adhesive, excellent pick-up properties are exhibited, which is widely used in the assembly process. However, the UV irradiation process other than the basic process is additionally required. There is a problem that the pick-up property is affected by the light amount difference depending on the use time.

In addition, in order to reduce the thickness of the semiconductor package, the thickness of the wafer becomes thinner and the pattern becomes complicated, so that the influence of static electricity generated upon pick-up becomes large.

In addition, the non-UV curing (thermosetting) dicing pressure-sensitive adhesive can shorten the process because a UV irradiation process is unnecessary, but peeling failure and lamination failure may occur due to low interfacial adhesion with an adhesive during wafer lamination. In particular, when picking up a thin film of 1 mil or less, defects due to die cracks occur, and when pick-up properties are improved by adjusting the adhesive force, there is a problem of falling off from the wafer ring, thereby causing serious quality problems in the semiconductor process.

BACKGROUND ART [0002] Dicing films used for cutting a semiconductor member such as a semiconductor wafer or a package in a process of manufacturing a semiconductor device have recently become more compact and thinner, and when the thickness precision of the dicing film is uneven, There is a difference in the method of contact of the dicing blade in the step of singling, which causes a problem of cracking of the semiconductor wafer. In addition, if the precision of the thickness of the film is uneven, there is a problem that cut residuals of the semiconductor member, cuttings or dirt residue at the time of dicing are generated and adhere to the semiconductor elements. Particularly, if the rotational speed of the dicing blade is increased in order to improve the chip decline of the wafer, the problem of the occurrence of the write-through occurs remarkably. Further, after the semiconductor member is bonded and diced, the dicing film is expanded to widen the gap of the semiconductor member. However, if there is not enough toughness in the substrate, there arises a problem that the dicing film is broken at the time of expansion. Therefore, there is a demand for a dicing film which can suppress substrate residue at the time of dicing and does not break the substrate at the time of expansion.

However, when the dicing tape is charged in a manufacturing process of a semiconductor chip or the like, there arises a problem that a product breakdown or work defects occur. For example, when the separator is peeled off from the dicing tape or when the dicing tape comes into contact with the blade during dicing, the dicing tape is likely to be charged. Further, the dicing tape may be charged when the dicing tape is separated from the suction table after the dicing, or when the chip or package is picked up.

Accordingly, Japanese Patent Laid-Open Publication No. 2010-077862 discloses a pressure-sensitive adhesive layer containing an antistatic layer composed of a resin composition containing 10 to 45 parts by mass of an antistatic resin containing a polyether and a pressure-sensitive adhesive layer containing a base polymer having a radiation- An antistatic type adhesive tape for semiconductor processing is proposed, and it is reported that the dicing tape can suppress the electrification by the antistatic layer.

Further, according to the dicing film disclosed in Japanese Laid-Open Patent Application No. 2015-162561, a dicing film having a base material and a pressure-sensitive adhesive layer provided on the base material is characterized in that it contains 3 to 30 wt% or less of an antistatic agent A dicing film is proposed. Further, an intermediate layer is provided between the substrate and the pressure-sensitive adhesive layer, and the intermediate layer does not substantially contain the antistatic agent.

However, the above-described problems still occur in the semiconductor package process in which the wafer is subjected to the short circuit phenomenon of the wafer pattern due to the generation of static electricity in the pick-up process, resulting in peeling failure when adhered to the wafer.

The present inventors have made efforts to solve the problems of the conventional dicing film. As a result, the present inventors have found that a pressure sensitive adhesive layer and a release layer for protecting the pressure sensitive adhesive are sequentially laminated on at least one surface of a base film layer, and an optimal amount of an ionic antistatic additive The present invention has been accomplished by confirming the result of minimizing the generation of static electricity with excellent pick-up properties after UV irradiation by curing by thermal curing or energy ray casting.

It is an object of the present invention to provide a UV curable dicing film for semiconductor having surface resistance characteristics.

In order to attain the above object, the present invention provides a thermosetting acrylic resin composition comprising 3 to 30 parts by weight of a polyisocyanate-based curing agent, 0.5 to 10 parts by weight of a phenylglyoxylate-based photoinitiator, Curable dicing resin for a semiconductor package having a surface resistivity characteristic in which a pressure-sensitive adhesive composition comprising an antistatic additive and 5 to 10 parts by weight of a pressure-sensitive adhesive composition is laminated on the pressure-sensitive adhesive layer side, Film.

In the dicing film of the present invention, the thickness of the base film layer is preferably 10 to 300 mu m.

In the dicing film of the present invention, the pressure-sensitive adhesive layer has a peel force of 100 to 200 g / inch before UV irradiation, a peel force after UV irradiation of 1 to 20 g / inch and a surface resistance property of 1 x 10 < . At this time, the thickness of the pressure-sensitive adhesive layer is preferably 3 to 50 mu m.

In the dicing film of the present invention, the releasing layer for protecting the pressure-sensitive adhesive preferably has a peeling strength with the pressure-sensitive adhesive layer of 0.5 to 5 g / inch.

According to the above configuration, the UV curable dicing film for a semiconductor package of the present invention adds surface resistance characteristics to the pressure sensitive adhesive layer to minimize static electricity that can be generated during pick-up in a semiconductor assembly process, thereby improving process stability and process yield The conventional problems can be solved simply.

Therefore, in the UV curable dicing film for semiconductor package having the surface resistance characteristic of the present invention, the wafer pattern short-circuit due to the generation of static electricity does not occur in the pick-up process during the semiconductor packaging process using the wafer, And has excellent pick-up properties after UV irradiation, and the generation of static electricity can be minimized.

1 is a schematic cross-sectional view of a UV curable dicing film for a semiconductor package of the present invention.

Hereinafter, the present invention will be described in detail.

1 is a schematic cross-sectional view of a UV curable dicing film for a semiconductor package according to the present invention, which comprises a pressure-sensitive adhesive layer 2 on at least one surface of a base film layer 1 and a pressure-sensitive adhesive release layer 3 for protecting the surface of the pressure- Are sequentially stacked.

More specifically, the present invention relates to a method for manufacturing a semiconductor device,

Sensitive adhesive composition comprising 3 to 30 parts by weight of a polyisocyanate curing agent, 0.5 to 10 parts by weight of a phenylglyoxylate photoinitiator and 5 to 10 parts by weight of an ionic antistatic additive based on 100 parts by weight of the thermosetting acrylic resin, The pressure-sensitive adhesive layer 2 and the pressure-

A UV curable dicing film for a semiconductor package having a surface resistance characteristic, wherein a pressure-sensitive adhesive release layer (3) is laminated on the pressure-sensitive adhesive layer (2)

Hereinafter, the features of the floor will be described in detail.

(1) The base film layer

In the dicing film of the present invention, the base film layer 1 may include a low-density polyolefin, a medium-density polyolefin, a high-density polyolefin film and the like, and may improve burr characteristics in the dicing process, A cross-linked film and a composite processed film of the above-mentioned films can be used to improve the problem that the film is not shrunk again after stretching in the stretching and shrinking process.

In the case of dicing, the base film layer 1 is generally subjected to surface treatment such as corona and plasma in order to increase adhesion with the pressure-sensitive adhesive layer on the base film layer 1. In this case, the surface tension is preferably not less than 50 dyne It is more than 60dyne.

According to a preferred embodiment of the present invention, the thickness of the base film layer 1 is 10 to 300 占 퐉, preferably 50 to 200 占 퐉, more preferably 70 to 150 占 퐉, and most preferably 80 to 110 占 퐉 .

(2) Pressure-sensitive adhesive layer

In the dicing film of the present invention, the pressure-sensitive adhesive layer (2) formed on one side of the base film layer (1) is of the UV curing type and the thickness of the pressure sensitive adhesive layer is not particularly limited; however, Preferably 3 to 50 占 퐉, more preferably 5 to 40 占 퐉, and most preferably 10 to 30 占 퐉 in order to prevent defects.

The pressure-sensitive adhesive layer (2) for the die-picking of the present invention is made of a thermosetting resin, a polyisocyanate-based curing agent, a phenylglyoxylate-based photoinitiator and an ionic antistatic additive, wherein the thermosetting resin is an epoxy resin, A thermosetting acrylic resin, a phenol resin and the like can be used, and an epoxy resin can be preferably used. As a preferable example of the epoxy resin, bisphenol A type, bisphenol F type, cresol novolak type, phenol, novolak type epoxy resin and the like are used And it is also possible to use a mixture of a plurality of epoxy resins in order to improve adhesion to a wafer and heat resistance in a semiconductor process.

As another preferred example, the thermosetting acrylic resin is used in the embodiment of the present invention.

The curing agent used in the pressure-sensitive adhesive layer (2) of the present invention is not limited to a particular kind, but a polyisocyanate curing agent is preferably used.

The content of the curing agent may vary depending on the concentration of the curing agent. The content of the curing agent is preferably 3 to 30 parts by weight based on 100 parts by weight of the acrylic resin, which is an example of the thermosetting resin. If the content of the curing agent is less than 3 parts by weight, cross-linking may not be sufficiently carried out and the surface may be transferred. If the amount of the curing agent is more than 30 parts by weight, an excess amount of the curing agent may exceed the functional group of the acrylic pressure- sensitive adhesive.

The curable compound contained in the pressure-sensitive adhesive layer (2) of the present invention is a photoinitiator used for initiating curing by energy ray, such as benzophenone, chitosan, alpha hydroxy ketone, alpha amino ketone, phenylglyoxylate , An acrylphosphine-based system, or the like is used. At this time, the photoinitiator may be used alone, or two or more kinds of photoinitiators may be used depending on the efficiency and characteristics of the photoinitiator for the purpose of forming a uniform cross-linked structure depending on the thickness of the pressure-sensitive adhesive layer,

In this case, the content of the photoinitiator may be 0.5 to 10 parts by weight, preferably 1 to 5 parts by weight, based on 100 parts by weight of the thermosetting acrylic resin.

Further, the pressure-sensitive adhesive layer (2) of the present invention contains an ionic compound or a lithium salt as an antistatic agent and an ionic compound as a compound having a benzotriazole group.

That is, an ionic antistatic additive is used. At this time, the ionic compound is excellent in compatibility with the solvent used in the pressure-sensitive adhesive layer, and the ionic antistatic additive is added in an optimal amount to obtain a concentration of 1 x 10 & Sensitive adhesive layer exhibiting a low surface resistance value can be formed.

At this time, the optimal content of the ionic antistatic additive is suitably in the range of 5 to 10 parts by weight based on 100 parts by weight of the thermosetting resin. If the amount of the ionic antistatic additive is less than 5 parts by weight, sufficient antistatic properties can not be obtained. Therefore, a process failure due to the generation of static electricity occurs in the die pick-up process during the semiconductor package assembly processing step. , The adhesive strength can be increased when peeling off after UV curing.

Further, the pressure-sensitive adhesive layer (2) has a peeling force before UV irradiation of 100 to 200 g / inch and satisfies the physical properties of peeling force after UV irradiation of 1 to 20 g / inch. At this time, if the peeling force is higher than 200 g / inch, the surface of the adhesive layer may be damaged when the film is removed. If the peeling force after UV irradiation is higher than 20 g / inch, peeling failure may occur in the die pick-up process.

 (3) release layer for protecting the adhesive (3)

The UV curable dicing film for semiconductor having the surface resistivity characteristic of the present invention is applied to the release-treated surface of the release layer for protecting the pressure-sensitive adhesive (3) with a pressure-sensitive adhesive resin composition prepared in a solution state with an organic solvent excellent in solubility with resin.

Accordingly, the release layer 3 for protecting the pressure-sensitive adhesive of the present invention has a peeling force with respect to the pressure-sensitive adhesive layer 2 of 0.5 to 5 g / inch.

As the coating method, gravure coating method, bar coating method, spray coating method, spin coating method, air knife coating method, roll coating method, blade coating method, gate roll coating method and die coating method can be used .

As the drying method, there is a method of performing thermal drying by a hot air drying furnace or the like. The drying temperature is not particularly limited, but is preferably 100 to 200 ° C, and the drying time is preferably 10 seconds to 5 minutes.

At this time, the thickness of the release layer 3 for protecting the pressure-sensitive adhesive is preferably 35 to 50 mu m, and if the thickness is less than 35 mu m, the base film tears due to the depth of the punching knife during punching operation. There is a problem in that it is separated from the adhesive layer by the angle of the base film when passing through the guide roll in the punching step.

Then, a UV-curable dicing film is prepared by laminating a polyolipid-based film having excellent properties on stretching and shrinking processes on the dried adhesive surface.

The UV curing type dicing film having the structure prepared in the above process was mounted on a punching machine to remove the release layer, and after primary punching in the form of a die bonding adhesive, the outer area was removed. One side was diced and the diameter of the die bonding adhesive Second punching is performed with larger punching knife.

After the second punching, if the outer region of the punching circle is removed, finally the UV curing type dicing integrated film is completed.

The UV-curable dicing film of the present invention thus produced is fixed on the wafer through the joints and the wafer ring while the release layer 3 for protecting the adhesive is removed, diced into a chip size and then picked up. Then, To complete the die bonding process.

Hereinafter, the present invention will be described in detail with reference to examples.

This is for further illustrating the present invention, and the scope of the present invention is not limited to these examples.

< Example  1>

10 g of the polyisocyanate-based curing agent, 1 g of the phenylglyoxylate-based photoinitiator and 5 g of the anionic antistatic additive were mixed with 100 g of the acrylic polymer and stirred for about 1 hour. After stirring, the pressure-sensitive adhesive composition was applied to a silicon-based release film (RPK201, manufactured by Toray Industries, Ltd.) having a thickness of 38 탆 in a thickness of 20 탆 and dried in a drier at 120 캜 for about 3 minutes, followed by laminating with a polyol- And further irradiated with ultraviolet rays to prepare a dicing film.

< Example  2>

10 g of the polyisocyanate curing agent, 1 g of the phenylglyoxylate-based photoinitiator and 7 g of the anion-based antistatic additive were mixed with 100 g of the acrylic polymer and stirred for about 1 hour. After stirring, the pressure-sensitive adhesive composition was applied to a silicon-based release film (RPK201, manufactured by Toray Industries, Inc.) having a thickness of 38 탆 in a thickness of 20 탆 and dried in a dryer at 120 캜 for about 3 minutes, followed by laminating with a polyol- Was irradiated with ultraviolet rays to prepare a dicing film.

< Comparative Example  1>

10 g of the polyisocyanate-based curing agent, 1 g of the phenylglyoxylate-based photoinitiator and 0.1 g of the anion-based antistatic additive were mixed with 100 g of the acrylic polymer and stirred for about 1 hour. After stirring, the pressure-sensitive adhesive composition was applied to a silicon-based release film (RPK201, manufactured by Toray Industries, Ltd.) having a thickness of 38 탆 in a thickness of 20 탆 and dried in a drier at 120 캜 for about 3 minutes, followed by laminating with a polyol- And further irradiated with ultraviolet rays to prepare a dicing film.

< Comparative Example  2>

10 g of the polyisocyanate curing agent, 1 g of the phenylglyoxylate-based photoinitiator and 1 g of the anion-based antistatic additive were mixed with 100 g of the acrylic polymer and stirred for about 1 hour. After stirring, the pressure-sensitive adhesive composition was applied to a silicon-based release film (RPK201, manufactured by Toray Industries, Inc.) having a thickness of 38 탆 in a thickness of 20 탆 and dried in a drier at 120 캜 for about 3 minutes, followed by laminating with a polyol- Was irradiated with ultraviolet rays to prepare a dicing film.

< Comparative Example  3>

10 g of the polyisocyanate curing agent, 1 g of the phenylglyoxylate photoinitiator and 3 g of the anion-based antistatic additive were mixed with 100 g of the acrylic polymer and stirred for about 1 hour. After stirring, the pressure-sensitive adhesive composition was applied to a silicon-based release film (RPK201, manufactured by Toray Industries, Inc.) having a thickness of 38 탆 in a thickness of 20 탆 and dried in a dryer at 120 캜 for about 3 minutes, followed by laminating with a polyol- Was irradiated with ultraviolet rays to prepare a dicing film.

< Comparative Example  4>

10 g of the polyisocyanate curing agent, 1 g of the phenylglyoxylate-based photoinitiator and 15 g of the anion-based antistatic additive were mixed with 100 g of the acrylic polymer and stirred for about 1 hour. After stirring, the pressure-sensitive adhesive composition was applied to a silicon-based release film (RPK201, manufactured by Toray Industries, Inc.) having a thickness of 38 탆 in a thickness of 20 탆 and dried in a dryer at 120 캜 for about 3 minutes, followed by laminating with a polyol- Was irradiated with ultraviolet rays to prepare a dicing film.

Figure pat00001

As shown in Table 1, the anionic antistatic additive used in Comparative Examples 1 to 3 had a good adhesive strength of the pressure-sensitive adhesive, but it was difficult to expect the antistatic effect required, In the pick-up process, a process failure due to the generation of static electricity continues to occur. The content of the anion-based antistatic additive used in Comparative Example 4 had a good level of antistatic property but a high adhesive strength, so that the surface of the adhesive layer was damaged when the film was removed.

On the other hand, in Examples 1 and 2, good adhesion and anti-static properties were ensured before and after UV irradiation, thereby confirming adhesion and surface resistance characteristics.

As described above, the present invention provides a UV curable dicing film for a semiconductor package having a pressure sensitive adhesive layer and a release layer for protecting the pressure sensitive adhesive layer sequentially laminated on one side of a base film layer.

The dicing film of the present invention contains the optimal amount of the ionic antistatic additive in the pressure-sensitive adhesive layer and is cured by thermosetting or energy ray casting, whereby the wafer pattern shot by the generation of static electricity in the pick- No phenomenon occurs, peeling failure does not occur when adhering to the wafer, excellent pick-up properties after UV irradiation, and generation of static electricity can be minimized.

It is to be understood that the present invention is not limited to the above embodiments and various changes and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention.

1: base film layer 2: pressure-sensitive adhesive layer
3: Release film for protecting the adhesive

Claims (6)

On one surface of the base film layer,
Sensitive adhesive composition comprising 3 to 30 parts by weight of a polyisocyanate curing agent, 0.5 to 10 parts by weight of a phenylglyoxylate photoinitiator and 5 to 10 parts by weight of an ionic antistatic additive based on 100 parts by weight of the thermosetting acrylic resin, And a pressure-sensitive adhesive layer
Curable dicing film for a semiconductor package having surface resistivity characteristics in which a pressure-sensitive adhesive release layer is laminated on the pressure-sensitive adhesive layer side. The UV curable dicing film for a semiconductor package according to claim 1, wherein the base film layer has a thickness of 10 to 300 mu m. The UV curable dicing film for semiconductor package according to claim 1, wherein the pressure-sensitive adhesive layer has a peel force of 100 to 200 g / inch before UV irradiation and a peel force of 1 to 20 g / inch after UV irradiation. . According to claim 1, wherein the pressure-sensitive adhesive layer is 1 × 10 10 Ω / UV-curable dicing film for a semiconductor package having a surface resistance of less than sq in. The UV curable dicing film for a semiconductor package according to claim 1, wherein the pressure-sensitive adhesive layer has a thickness of 3 to 50 탆. The UV curable dicing film for a semiconductor package according to claim 1, wherein the releasable layer for protecting the pressure-sensitive adhesive has a peeling force of 0.5 to 5 g / inch with respect to the pressure-sensitive adhesive layer.
KR1020160047026A 2016-04-18 2016-04-18 Uv dicing film for semiconductor package having surface resistance KR20170119182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020160047026A KR20170119182A (en) 2016-04-18 2016-04-18 Uv dicing film for semiconductor package having surface resistance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160047026A KR20170119182A (en) 2016-04-18 2016-04-18 Uv dicing film for semiconductor package having surface resistance

Publications (1)

Publication Number Publication Date
KR20170119182A true KR20170119182A (en) 2017-10-26

Family

ID=60300854

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160047026A KR20170119182A (en) 2016-04-18 2016-04-18 Uv dicing film for semiconductor package having surface resistance

Country Status (1)

Country Link
KR (1) KR20170119182A (en)

Similar Documents

Publication Publication Date Title
TWI618594B (en) Semiconductor wafer manufacturing method and mask integrated surface protection tape therefor
KR101880644B1 (en) Surface protective sheet
KR101017731B1 (en) Adhesive film having dicing sheet and method for manufacturing the same
US10916439B2 (en) Mask-integrated surface protective film
KR102489355B1 (en) Dicing tape, dicing die bond film and method of manufacturing semiconductor device
CN109216211B (en) Dicing tape, dicing die bonding film, and method for manufacturing semiconductor device
JP2005340796A (en) Surface protecting film for semiconductor wafer and protecting method of semiconductor wafer using the protecting film
KR20110036698A (en) Process for production of dicing/die bonding film
KR102391661B1 (en) Semiconductor chip manufacturing method, surface protection tape
TW201933452A (en) Semiconductor chip production method
KR20190138457A (en) Anti- electrostatic discharge die attach film, Manufacturing method thereof and Process of dicing wafer
TWI717654B (en) Manufacturing method of semiconductor chip
CN111004588A (en) Dicing die bonding film
TWI686853B (en) Mask integrated surface protection tape with release liner
KR20170119182A (en) Uv dicing film for semiconductor package having surface resistance
CN108728000B (en) Dicing die bonding film
JP7440633B2 (en) Electronic device manufacturing method
JP7440632B2 (en) Electronic device manufacturing method
JP7176919B2 (en) Dicing die bond film
KR20140085715A (en) UV Dicing Film for Semiconductor Device
JP2004259713A (en) Adhesive film for surface protection of semiconductor wafer and method for protecting semiconductor wafer using the film
CN116134106A (en) Method for manufacturing electronic device
CN116157481A (en) Method for manufacturing electronic device
CN116157486A (en) Adhesive film for back grinding and method for manufacturing electronic device
KR20240005912A (en) Manufacturing method of adhesive film and electronic device for backgrinding