KR20170109335A - Apparatus for growing grystal having auxiliary heat source member - Google Patents

Apparatus for growing grystal having auxiliary heat source member Download PDF

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Publication number
KR20170109335A
KR20170109335A KR1020160033327A KR20160033327A KR20170109335A KR 20170109335 A KR20170109335 A KR 20170109335A KR 1020160033327 A KR1020160033327 A KR 1020160033327A KR 20160033327 A KR20160033327 A KR 20160033327A KR 20170109335 A KR20170109335 A KR 20170109335A
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South Korea
Prior art keywords
crucible
heat
inner crucible
auxiliary
present
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KR1020160033327A
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Korean (ko)
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KR101785038B1 (en
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윤영권
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에스엠엔티 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/145—Carbon only, e.g. carbon black, graphite
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/62—Heating elements specially adapted for furnaces
    • H05B3/66—Supports or mountings for heaters on or in the wall or roof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
    • H05B2203/004—Heaters using a particular layout for the resistive material or resistive elements using zigzag layout

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention relates to a crystal growth device including a sub heating part. The device includes: a furnace (100), a plurality of internal crucibles (200); a main heating part (300), and a temperature sensor (400). According to the present invention, the internal crucibles (200) are arranged in a line in the furnace (100), and advisably used to melt materials and grow crystals from seed crystals. According to the present invention, the main heating part (300) is placed on the outer front and rear sides of each of the internal crucibles (200) to heat the internal crucibles (200). According to the present invention, the temperature sensor (400) is extended from the outside of the furnace (100) to the inside of the same to measure the temperature of the furnace (100) and the internal crucibles (200). The present invention more includes a sub heating part (500) placed on the left or right side of the internal crucibles (200), on which the main heating part (300) is not placed.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal growth apparatus having a supplementary heating unit,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal growth apparatus, and more particularly, to a crystal growth apparatus having a supplementary heating unit to maintain a thermal balance inside a growth furnace.

The present invention can be applied to an apparatus for growing various crystals. However, in order to explain the superiority of the present invention, the characteristics of the present invention will be described by taking as an example a sapphire single crystal growing apparatus which requires high temperature control.

In the case of the conventional sapphire growth method, in order to cope with an increase in demand, it has been essential to increase the crystal size in a productivity improvement method aiming at mass production. However, in order to grow large crystals, it is necessary to extend the crystal growth time and the cooling time, so that the production time is prolonged. As a result, the productivity as expected can not be improved. In order to secure the crystal quality, Technology development is required.

In order to overcome these problems and improve the productivity, a method of growing a plurality of single crystals at the same time by increasing the utilization ratio of the material by making the shape of the crystal square.

Korean Patent No. 10-1196445 is a prior art relating to securing temperature uniformity in the longitudinal direction by blocking the radiation of heat directly from the heating element when a plurality of crucibles are placed in a single thermostat. Specifically, in order to make the temperature in the horizontal direction of the crucible uniform, a plurality of heating elements are arranged in a divided state on the outside of the thermosensitive body so as to be independently operated. The heating element includes a plurality of side heating elements which are disposed on both sides of the outer wall of the thermosensitive body and connected to one electrode, and a connection heating element which connects the side heating elements from above.

However, when a plurality of crucibles are arranged in a single thermosensitive body, the temperature distribution on the right and left sides is different depending on the position of the crucible. In other words, the temperature distribution of the crucibles located in the inside of the crucibles arranged in a row is the same, but the distribution of the temperature in the right and left of the crucibles in the outer periphery of the row arrangement is changed, so that quality dispersion occurs, A problem that can not be avoided has arisen.

Korean Registered Patent No. 10-1196445 (Registration date: October 25, 2012)

The crystal growth apparatus provided with the auxiliary heating unit according to the present invention has the following problems.

First, the problem is that a plurality of internal crucibles have the same temperature distribution. In particular, the temperature distribution of each inner crucible disposed at the outer end of the row arrangement is the same as that of the other inner crucibles.

Second, it is an object of the present invention to provide a crystal growth apparatus and method for growing a single crystal of excellent quality and uniform quality grown in all crucibles.

Third, an economical and efficient sapphire single crystal growing apparatus and a growth method using the same are provided to improve the yield and increase productivity by arranging a plurality of crucibles in a growth furnace and simultaneously growing a plurality of sapphire single crystals.

The present invention has been made in view of the above problems, and it is an object of the present invention to provide an apparatus and method for controlling the same.

The present invention relates to a crystal growth apparatus provided with an auxiliary heating unit, comprising: a furnace; A plurality of internal crucibles arranged in line in the furnace, the raw materials melting and allowing the crystal to grow from the seed crystals; A main heating unit disposed on an outer front surface and a rear surface of each of the inner crucibles to heat the inner crucible; And a temperature sensor extending from the outside of the furnace to the inside to measure the temperature inside the furnace and the temperature inside the crucible.

It is preferable that the present invention further includes an auxiliary heating unit disposed on the left and right sides of the outer crucible disposed at both ends of the row arrangement, where the main heating unit is not disposed.

The auxiliary heating portion according to the present invention is preferably a dummy crucible.

The dummy crucible according to the present invention is provided in the same size as the inner crucible or smaller than the inner crucible, and the same raw material as the inner crucible is preferably charged.

The auxiliary heat generating part according to the present invention is provided with a high temperature heating element, and the high temperature heating element is preferably any one of molybdenum, tungsten, tantalum and graphite.

The auxiliary heating unit according to the present invention is provided as an auxiliary electric heater and the heating value of the auxiliary electric heater is preferably smaller than the heating value of the electric heater of the heating unit.

It is preferable that the auxiliary electric heater according to the present invention has a lower cross sectional area than the upper portion and a smaller cross sectional area toward the upper portion.

The auxiliary electric heater according to the present invention is preferably formed in a corrugated structure.

The crystal growth apparatus having the auxiliary heating unit according to the present invention has the following effects.

First, there is an effect that a separate auxiliary heating portion is provided in the inner crucible disposed at the outer end of the row arrangement to uniform the temperature distribution of all the inner crucibles.

Second, it has the effect of improving the yield by homogenizing the quality of all the internal crucibles.

Third, regardless of the number of inner crucibles, it can be applied only to the inner crucible disposed at the outer end, which is very economical and efficient.

 The effects of the present invention are not limited to those mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

1 and 2 are a plan view and a front view of the prior art relating to an inner crucible arranged in a line.
3 and 4 are a plan view and a front view showing a dummy crucible embodiment according to the present invention.
5 and 6 are a front view and a side view showing an embodiment of an auxiliary electric heater according to the present invention.
7 is a front view and a side view of an auxiliary electric heater according to the present invention.
Fig. 8 is a schematic view showing the constitution and use of tilting (tilting) in the annealing heat insulating means according to the present invention.
Fig. 9 is a schematic view showing the construction and use of slipping (sliding) in the annealing and heat insulating means according to the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Wherever possible, the same or similar parts are denoted using the same reference numerals in the drawings.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular forms as used herein include plural forms as long as the phrases do not expressly express the opposite meaning thereto.

Means that a particular feature, region, integer, step, operation, element and / or component is specified and that other specific features, regions, integers, steps, operations, elements, components, and / It does not exclude the existence or addition of a group.

All terms including technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Predefined terms are further interpreted as having a meaning consistent with the relevant technical literature and the present disclosure, and are not to be construed as ideal or very formal meanings unless defined otherwise.

1 and 2 are a plan view and a front view of the prior art relating to an inner crucible arranged in a line. FIG. 1 and FIG. 2 show the construction of a plurality of conventional sapphire single crystal growing apparatuses. The temperature distribution in the upper and lower portions of the crucible is uniformly distributed by the heater. However, In the case of the crucibles 1 and 6 located at both ends of the arrangement, the temperature distribution on the right and left sides greatly differs. This is because the crucible 2 is disposed on the right side of the crucible 1 in Fig. 1 as a heat generating element, but no heat generating element is disposed on the left side of the crucible 1. 1, the crucible 5 is disposed as a heat generating element, but the right side of the crucible 6 is not provided with any heat generating element. Therefore, when the crystal grows, the crucibles 1,6 exhibit a different shape from the crucibles 2 to 5, and thus the crystal quality of the crucibles 1 and 6 is lowered and the yield is significantly lowered.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

The present invention includes a furnace 100, a plurality of inner crucibles 200, a main heating unit 300, and a temperature sensor 400, which are provided with auxiliary heating units.

The inner crucible 200 according to the present invention is arranged in a row in the furnace 100, and melts the raw material and grows crystals from the seed crystal.

The main heating unit 300 according to the present invention is preferably disposed on the outer front and rear surfaces of the inner crucible 200 to heat the inner crucible 200. It is also possible that the main heating unit 300 is connected to the top surface heating unit disposed on the outer front surface or the rear surface.

The temperature sensor 400 according to the present invention preferably extends from the outside of the furnace 100 to the inside to measure the temperature inside the furnace 100 and the temperature of the internal crucible 200.

It is further preferable that the auxiliary heating unit 500 disposed on the left side or the right side of the outer crucible 200 disposed at both ends of the row arrangement without the main heating unit 300 disposed therein.

As an embodiment of the auxiliary heating unit 500 according to the present invention, it is preferable that the dummy crucible 510 is a dummy crucible. 3 and 4 are a plan view and a front view showing an embodiment of a dummy crucible according to the present invention.

It is preferable that the dummy crucible 510 be disposed outside the outer crucible disposed at both ends and then use the same thermal conductor as the heat sink used for the inner crucible 200 so that the temperature gradients of the upper and lower adjacent crucibles can be realized in the same manner . The heat conductor removes the heat from the bottom of the crucible so that the temperature gradient occurs naturally from the bottom to the top of the crucible.

The dummy crucible 510 according to the present invention is provided in the same size as the inner crucible or smaller than the inner crucible, and the same raw material as the inner crucible is preferably charged. The dummy crucible 510 plays a role of having the same temperature gradient and temperature distribution as the inner crucible disposed at the center of the inner crucible disposed at the outer periphery. That is, if the role of the dummy crucible can be sufficiently carried out, the smaller the dummy crucible, the smaller the size of the entire furnace, and the smaller the amount of the raw material to be charged into the crucible.

The auxiliary heating part 500 according to the present invention is provided with a high temperature heating element (not shown), and the high temperature heating element is preferably any one of molybdenum, tungsten, tantalum and graphite. The high temperature heating element according to the present invention is an object disposed after being externally applied with heat and emitting high temperature heat. The shape of the crucible is not limited, but is preferably similar to the inner crucible. The high temperature means a temperature similar to the temperature that the inner crucible emits.

It is preferable that the auxiliary heating unit 500 according to the present invention is an auxiliary electric heater 520 and the heating value of the auxiliary electric heater is less than the heating value of the electric heater of the main heating unit 300. 5, it is preferable that the auxiliary electric heater 520 generates heat supplementarily only by the amount of heat generated by the crucible 2 disposed on the right side of the crucible 1, so that it is preferable that the amount of heat generated by the auxiliary heaters 520 is smaller than that generated by the main heat generating unit 300.

5 and 6 are a front view and a side view showing an embodiment of an auxiliary electric heater according to the present invention. 5, the left and right temperature distributions of the crucibles 1 and 6 having different temperature distributions can be controlled similarly to the crucibles 2 to 4 by using the electric heater 520 as the auxiliary heat generating portion. Therefore, the quality of crystals is complemented, and sapphire growth of homogeneous quality throughout the crucible is possible. At this time, it is preferable that the electric heater 520 is controlled in a similar manner to the temperature distribution of the crucibles 2 to 4 by using a separate optical thermometer, and is preferably smaller than the calorific value of the electric heater used in the heat generator 200. It is also preferable to use a separate optical pyrometer to control the temperature distribution similar to that of the crucible 2 to 4.

As shown in FIG. 7, the electric heater 520 according to the present invention preferably has a structure in which the cross-sectional area of the lower portion is larger than that of the upper portion, and the cross-sectional area becomes smaller toward the upper portion.

The auxiliary electric heater 520 is designed such that the vertical electric resistance of the auxiliary electric heater 520 is different from that of the auxiliary electric heater 520 so that the upper and lower temperature gradients of the adjacent inner crucible can be equalized. The design of the resistance value for realizing the upper and lower temperature gradients of the auxiliary electric heater 520 is preferably such that the cross-sectional area of the lower side is increased and the cross-sectional area thereof is decreased toward the upper side. According to this design, it is possible to generate the same temperature gradient as that of the adjacent inner crucible because the heat value increases and the temperature rises from the lower part to the upper part.

The auxiliary electric heater 520 according to the present invention is preferably formed in a corrugated structure. This is to maximize the heat dissipation area to deliver the desired heat quantity.

It is also necessary to provide an annealing and heat insulating means capable of effectively preventing the cooling of the lower portion of the crucible and simultaneously removing the stress by annealing in order to remove the stress existing in the grown single crystal through cooling and gradual cooling of the lower portion of the inner crucible .

In the present invention, cooling means (600) installed to extend downward from the bottom of the inner crucible to prevent complete melting of the seed crystal and to perform crystal growth by temperature difference between the upper and lower portions of the inner crucible; And an annealing and insulating means (700) for removing the temperature difference between the cooling water stage and the inner crucible by intercepting the cooling flow while releasing the crystal growth to the lower part of the bottom of the inner crucible of the cooling means in the annealing step, It is preferable to additionally provide this.

The annealing insulation means 700 according to the present invention comprises: a side support 710 surrounding the cooling means; And a heat flow cut-off portion (720) on the top of the side support portion and slidable (sliding) or tilting (tilting) in accordance with the upward and downward movement of the cooling means, It is desirable to block the heat flow by the blocking portion.

8 is characterized in that a cooling means 600 composed of a heat conductor 610 and a heat exchanger 620 is located vertically below the crucible 200 and an annealing heat insulating means 700 is provided on the side of the cooling means 600 When the cooling means 600 is in contact with the crucible 200, the heat flow blocking portion 720 at the upper end of the side supporting portion 710 is inclined to be supported by the heat conductor 610. When the cooling means 600 is lowered vertically downward from the crucible 200 in the annealing step after the completion of the crystal growth, the heat flow cut-off portion 720 of the annealing heat insulating means 700 inclined Is tilted naturally by gravity and returns to a horizontal state to block the upper end of the cooling means 600 to block radiant heat or heat flow between the crucible 200 and the heat conductor 610.

9 is characterized in that a cooling means 600 composed of a heat conductor 610 and a heat exchanger 620 is located vertically below the crucible 200 and an annealing and heat insulating means 700 is provided on the side of the cooling means 600 When the cooling means 600 is in contact with the crucible 200, a vertical plane of the triangular heat flow blocking portion 720 is held in contact with the heat conductor 610. FIG. In the case where the cooling means 600 is lowered vertically downward from the crucible 200 in the annealing step after the completion of the crystal growth after the completion of the crystal growth, 720 slip naturally by sliding gravity and adhere to each other to block the upper end portion of the cooling means 600 to block radiant heat or heat flow between the crucible 200 and the heat conductor 610.

The material of the annealing and heat insulating means according to the present invention is preferably a high melting point metal, an alloy thereof, or a graphite, graphite fiber or a composite thereof.

While the present invention has been particularly shown and described with reference to specific embodiments thereof, those skilled in the art will appreciate that such specific embodiments are merely preferred embodiments and that the scope of the present invention is not limited thereto will be. Accordingly, the actual scope of the present invention will be defined by the appended claims and their equivalents.

100: Furnace 200: Crucible
300: heating part 400: temperature sensor
500: auxiliary heating part 510: dummy crucible
520: electric heater 600: cooling means
700: Annealing heat insulating means 710: Side support
720: Heat flow cut-

Claims (8)

Furnace;
A plurality of internal crucibles arranged in series in the furnace, the raw materials melting and allowing the crystals to grow from the seed crystals;
A main heating unit disposed on an outer front surface and a rear surface of each of the inner crucibles to heat the inner crucible; And
And a temperature sensor extending from the outside of the furnace to the inside to measure the temperature inside the furnace and the temperature of the internal crucible,
Further comprising an auxiliary heat generating unit disposed on the left and right sides of the outer side of the inner crucible disposed at both ends of the row arrangement in which the main heat generating unit is not disposed. The method according to claim 1,
Wherein the auxiliary heating unit is a dummy crucible. The method of claim 2, wherein the dummy crucible
The inner crucible is the same size as the inner crucible or smaller than the inner crucible,
Wherein the same raw material as the inner crucible is charged. The method according to claim 1,
The auxiliary heating unit may be a high temperature heating element,
Wherein the high temperature heating element is one of molybdenum, tungsten, tantalum, and graphite. The method according to claim 1,
The auxiliary heat generating portion is provided as an auxiliary electric heater,
Wherein the heating value of the auxiliary electric heater is smaller than the heating value of the electric heater of the heating unit. The method of claim 5,
Wherein the auxiliary electric heater has a lower cross sectional area than that of the upper portion and has a smaller cross sectional area toward the upper portion. The method of claim 6,
Wherein the auxiliary electric heater is formed in a wrinkled structure. The method according to claim 1,
Cooling means installed to extend from the bottom of the inner crucible to the bottom to prevent complete melting of the seed crystal and to perform crystal growth by the temperature difference between the upper and lower portions of the inner crucible; And an annealing heat insulating means for removing the temperature difference between the upper end of the inner crucible and the lower crucible by interrupting the cooling and releasing the heat flow between the cooling end and the inner crucible, Respectively,
The annealing heat insulating means includes: a side support portion surrounding the cooling means; And a heat flow cutoff portion which slides or tilts according to the upward and downward movement of the cooling means. The heat cutoff portion cuts off heat flow by the heat cutoff portion when the cooling means falls,
Characterized in that the material of the annealing and heat insulating means is a high melting point metal, an alloy thereof, graphite, graphite fiber or a composite material thereof.
KR1020160033327A 2016-03-21 2016-03-21 Apparatus for growing grystal having auxiliary heat source member KR101785038B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109898136A (en) * 2019-04-03 2019-06-18 贝民贤 Multiple Sapphire Crystal Growth device and growing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101136143B1 (en) * 2009-09-05 2012-04-17 주식회사 크리스텍 Method and Apparatus for Growing Sapphire Single Crystal
KR101196445B1 (en) * 2012-05-03 2012-11-01 주식회사 크리스텍 Apparatus for Growing Sapphire Crystal and Method for Growing Sapphire Crystal Using the Same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109898136A (en) * 2019-04-03 2019-06-18 贝民贤 Multiple Sapphire Crystal Growth device and growing method

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