KR20170101647A - Shield device of electromagnetic interference and method of fabricating the same - Google Patents

Abstract

The present invention relates to an electromagnetic wave shielding apparatus including a molding member for shielding an electromagnetic wave, and a manufacturing method thereof. The electromagnetic wave shielding apparatus according to an embodiment of the present invention comprises: a molding member surrounding at least one electronic component mounted on a substrate; and a shielding member including a first conductive film, a second conductive film, a third conductive film, and a fourth conductive film, which are sequentially stacked to surround the molding member, wherein the first conductive film is thinner than the second conductive film.

Description

TECHNICAL FIELD [0001] The present invention relates to an electromagnetic wave shielding device and a method of manufacturing the same,

An embodiment relates to an electromagnetic wave shielding apparatus.

2. Description of the Related Art A large number of electronic devices are incorporated and functioned in widely used mobile communication terminals, PDAs (Personal Digital Assistants), mobile communication terminals such as smart phones, communication equipment, and various media players, and electronic devices include a printed circuit board PCB). ≪ / RTI >

In particular, an RF (Radio Frequency) integrated module is exposed to electromagnetic interference and an abnormal function is caused in an electronic device constituting an integrated module by electromagnetic interference. Such electromagnetic interference is called EMI (Electromagnetic Interference), and is unnecessarily Radiated Emission (RE) or Conducted Emission (CE) from an electronic device, thereby affecting the function of an adjacent electronic device. As a result, the circuit function is deteriorated and malfunction of the device occurs.

Generally, CE (conduction emission) is an electromagnetic noise generated mainly at 30MHz or less, and is transmitted through a medium such as a signal line or a power line. RE (radiated emission) is an electromagnetic noise generated mainly at 30 MHz or more, and is radiated to the atmosphere, and has a wider radiation range than CE.

In order to solve the above-described problems, a metal can for shielding electromagnetic waves can be used. However, the metal can covers a plurality of electronic elements mounted on the substrate individually, and it is difficult to apply it to various modules because the height of the metal can, the material of the metal can, and the thickness of the metal can must be considered. Furthermore, there is a problem that complete electromagnetic wave shielding is difficult due to the gap between the metal can and the printed circuit board.

An embodiment provides an electromagnetic wave shielding apparatus including a molding member for electromagnetic wave shielding and a method of manufacturing the same.

The electromagnetic shielding apparatus of the embodiment includes: a molding member for enclosing at least one electronic element mounted on a substrate; And a shielding member including a first conductive film, a second conductive film, a third conductive film, and a fourth conductive film stacked in order to surround the molding member, wherein the thickness of the first conductive film is larger than that of the second conductive film thin.

The electromagnetic wave shielding apparatus of the embodiment and its manufacturing method have the following effects.

First, the first conductive film which is in direct contact with the molding member of the electromagnetic wave shielding device is thinner than the second conductive film which is a seed layer of the third conductive film, so that the adhesion between the shielding member and the molding member is improved.

Secondly, the shielding member is formed so as to cover at least one side of the substrate, so that the electronic element mounted on the substrate is completely sealed by the substrate, the molding member and the shielding member. Therefore, the electromagnetic wave shielding function can be improved.

1 is a cross-sectional view of an electromagnetic wave shielding apparatus according to an embodiment of the present invention.
2 is a photograph showing a blister formed on the molding member.
3 is a cross-sectional view of an electromagnetic wave shielding apparatus according to another embodiment of the present invention.
4 is a graph showing the electromagnetic wave shielding of the present invention.
5A to 5F are cross-sectional views illustrating a method of manufacturing an electromagnetic wave shielding apparatus according to an embodiment of the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the embodiments of the present invention are not intended to be limited to the specific embodiments but include all modifications, equivalents, and alternatives falling within the spirit and scope of the embodiments.

Terms including ordinals, such as first, second, etc., may be used to describe various elements, but the elements are not limited to these terms. The terms are used for the purpose of distinguishing one component from another. For example, without departing from the scope of the embodiments, the second component may be referred to as a first component, and similarly, the first component may also be referred to as a second component. And / or < / RTI > includes any combination of a plurality of related listed items or any of a plurality of related listed items.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the embodiments of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

In the description of the embodiments, when an element is described as being formed "on or under" another element, the upper or lower (lower) (on or under) all include that the two components are in direct contact with each other or that one or more other components are indirectly formed between the two components. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one component.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings, wherein like or corresponding elements are denoted by the same reference numerals, and redundant description thereof will be omitted.

Hereinafter, an electromagnetic wave shielding apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view of an electromagnetic wave shielding apparatus according to an embodiment of the present invention.

1, the electromagnetic wave shielding apparatus of the embodiment of the present invention includes a first conductive film 20a, a second conductive film 20b, a third conductive film 20b, and a third conductive film 20b, which are sequentially stacked so as to surround the molding member 15 and the molding member 15, A shielding member 20 including a first conductive layer 20c and a fourth conductive layer 20d and the electromagnetic shielding device may be disposed to completely enclose the electronic elements 10a and 10b mounted on the substrate 10. [ Particularly, the electromagnetic wave shielding device is a structure that encloses a plurality of electronic elements 10a and 10b at a time.

The substrate 10 may be selected from a PCB (Printed Circuit Board), an LTCC (Low Temperature Co-fired ceramic), and the like, on which electronic circuits including wiring and the like are formed. The LTCC is formed by using a method of co-firing ceramic and metal at a temperature of 800 ° C to 1000 ° C. A green sheet having a structure in which a glass having low melting point and a ceramic are mixed is coated with silver, And can be formed by printing a conductive paste such as copper. In the LTCC as described above, a passive element such as a capacitor, a resistor, an inductor, or the like is formed, which enables high integration and slimness reduction.

The electronic devices 10a and 10b mounted on the substrate 10 may be connected to wirings formed on the substrate 10 and driven.

A plurality of electronic devices 10a and 10b are mounted on the substrate 10 to form an integrated module and a radio frequency integrated module (hereinafter, referred to as " RF ") integrated module used for a tracking system device, a voltage controlled oscillator, Are exposed to severe radio interference. Such electromagnetic interference generates electromagnetic interference (EMI) of the electronic devices 10a and 10b constituting the integrated module. Thus, the circuit function of the substrate 10 may be deteriorated or malfunction of the apparatus may occur and reliability may be deteriorated.

Therefore, the electromagnetic wave shielding apparatus according to the present invention can surround the electronic devices 10a and 10b to prevent electromagnetic interference. The electromagnetic wave shielding device may include a molding member 15 and a shielding member 20.

The molding member 15 protects the electronic devices 10a and 10b from external impact and can prevent a short circuit of the electronic devices 10a and 10b and the bonding region to which the substrate 1 is fixed. The molding member 15 may be formed to completely enclose the plurality of electronic devices 10a and 10b. The molding member 15 may be formed on the entire surface of the substrate 10 except for the antenna

The molding member 15 may include a synthetic resin material such as epoxy or silicone. For example, the molding member 15 may be an epoxy molding compound (EMC). The material of the molding member 15 is not limited thereto. The molding member 15 may be formed by a dam & fill molding method, a transfer molding method, or the like.

The upper surface of the molding member 15 includes the uneven pattern 15a to improve the bonding force and the fixing force between the shield member 20 and the molding member 15. [ The concavo-convex pattern 15a may be formed through a surface treatment of the molding member 15 using an ion beam, a plasma or the like, but is not limited thereto.

The roughness average (Ra) of the uneven pattern 15a is preferably 5 占 퐉 or less. This is because the molding member 15 may partially expose the electronic devices 10a and 10b if the average roughness of the uneven pattern 15a is too large. To prevent this, the molding member 15 should have a very thick thickness. That is, since the thickness of the electromagnetic wave shielding apparatus is increased, it is difficult to reduce the thickness of the electromagnetic wave shielding apparatus.

The shielding member 20 includes first, second, third and fourth conductive films 20a, 20b, 20c and 20d, and the first, second, third and fourth conductive films 20a, 20b, 20c, and 20d may in turn enclose the molding member 15. At this time, the first and second conductive films 20a and 20b may be formed along the uneven pattern 15a.

The first conductive layer 20a is provided to improve the bonding force between the shielding member 20 and the molding member 15. The first conductive layer 20a and the shielding member 20 are in direct contact with each other. The first conductive layer 20a may be formed by a sputtering method or may be formed using a cylindrical sputtering apparatus so as to be formed on a side surface of the molding member 15. [ At this time, the thickness d1 of the first conductive film 20a is thinner than the thickness d2 of the second conductive film 20b.

The second conductive layer 20b may be formed by a sputtering method, an electroless plating method, or the like. When the second conductive film 20b is formed by a sputtering method, the second conductive film 20b may be formed on the entire surface of the first conductive film 20a by using a cylindrical sputtering apparatus as described above .

In general, the second conductive layer 20b functions as a seed layer for forming the third conductive layer 20c. Therefore, in order to form the third conductive film 20c to a sufficient thickness on the second conductive film 20b and prevent the film characteristic of the third conductive film 20c from being degraded, the second conductive film 20b is formed, There is a limit in reducing the thickness (d2)

However, when the second conductive film 20b is in direct contact with the molding member 15, the adhesion of the molding member 15 may be reduced due to the thickness d2 of the second conductive film 20b. In this case, during the reflow process for electrical connection between the electronic elements 10a and 10b and the wiring (not shown) of the substrate 10, the interface between the second conductive film 20b and the molding member 15 This can cause problems.

2 is a photograph showing a blister formed on the molding member.

The interface between the molding member 15 and the shielding member 20 is extinguished at a reflow process at about 260 ° and a blister may be generated on the surface of the molding member 15 as shown in FIG. In this way, the electromagnetic wave shielding function can be deteriorated.

On the other hand, in the present invention, the first conductive film 20a having a thickness d1 thinner than the thickness d2 of the second conductive film 20b is disposed between the molding member 15 and the second conductive film 20b , The adhesion between the shielding member 20 and the molding member 15 can be improved. Furthermore, the first conductive film 20a having a small thickness d1 can be uniformly formed along the concave-convex pattern 15a of the molding member 15. [ Accordingly, the area of the shielding member 20 and the molding member 15 which are in close contact with each other through the uneven pattern 15a increases, so that the bonding force can be further improved.

Furthermore, the first conductive layer 20a functions as a seed layer of the second conductive layer 20b, so that the anchoring energy of the second conductive layer 20b can be improved. Therefore, the third conductive film 20c can be uniformly formed on the second conductive film 20b.

The first conductive layer 20a may include nickel (Ni), nickel chrome (NiCr), and the second conductive layer 20b may include copper (Cu). In this case, the materials of the first and second conductive films 20a and 20b are not limited thereto. When the first conductive layer 20a is formed of nickel (Ni) or nickel chromium (NiCr) as described above, the thickness d1 of the first conductive layer 20a may be in the range of 0.1 탆 to 0.5 탆, When the second conductive film 20b is formed of copper, the thickness d2 of the second conductive film 20b may be 0.6 탆 to 1 탆.

The third conductive film 20c has a thickness larger than that of the first and second conductive films 20a and 20b and can substantially block electromagnetic waves generated in the electronic devices 10a and 10b. The third conductive layer 20c may be formed on the surface of the second conductive layer 20b by using an electroplating method and the third conductive layer 20c may include copper.

The third conductive film 20c may be formed to cover the concave-convex pattern 15a of the molding member 15 so that the surface of the fourth conductive film 20d, which will be described later, is flat. For this, the third conductive film 20c may have a thickness greater than that of the first and second conductive films 20a and 20b.

For example, when the thickness of the third conductive film 20c is too small, the electromagnetic wave shielding function of the third conductive film 20c is lowered. If the thickness of the third conductive film 20c is too thick, The volume of the electromagnetic shielding device is increased and the size of the module can be increased. Therefore, the thickness of the third conductive film 20c may be 2.5 占 퐉 to 2.8 占 퐉.

The fourth conductive layer 20d may be formed using an electroplating method. The fourth conductive film 20d may be formed at the outermost portion of the shielding member 20 to prevent discoloration and oxidation of the shielding member 20. [ For this purpose, the fourth conductive layer 20d may be formed of a stable metal having a low reactivity. For example, the fourth conductive layer 20d may include nickel (Ni) having a high corrosion resistance . The thickness of the fourth conductive film 20d may be 0.6 탆 to 1 탆, but is not limited thereto.

In the electromagnetic wave shielding apparatus of the present invention as described above, the adhesion between the molding member 15 and the shielding member 20 can be improved. The molding member 15 and the shielding member 20 are integrally formed with an antenna for radiating radio waves of the electronic devices 10a and 10b, It may be formed so as to surround the entire surface of the substrate 10 except for the same transmitting portion. The shielding member 20 exposes the transmitting portion and is formed to cover at least one side of the substrate 10 so that the electronic elements 10a and 10b are connected to the substrate 10, the molding member 15 and the shielding member 20 ). ≪ / RTI >

3 is a cross-sectional view of an electromagnetic wave shielding apparatus according to another embodiment of the present invention.

As shown in Fig. 3, the uneven pattern 15a may be formed not only on the upper surface of the molding member 15, but also on the side surface of the molding member 15 as well. In this case, since the first and second conductive films 20a and 20b are also formed along the concavo-convex pattern 15a on the upper surface and the side surface, the area where the molding member 15 and the shield member 20 are closely contacted further increases The bonding force can be further improved.

4 is a graph showing the electromagnetic wave shielding of the present invention.

As shown in FIG. 4, when the module does not include the electromagnetic wave shielding device, the module generates four peaks including the original signal. However, when the electromagnetic wave shielding apparatus is provided, the module can generate only the original signal (one peak). And, one peak can be transmitted through the antenna exposed by the electromagnetic wave shielding device as described above.

Hereinafter, a method for manufacturing an electromagnetic wave shielding apparatus according to an embodiment of the present invention will be described in detail.

5A to 5F are cross-sectional views illustrating a method of manufacturing an electromagnetic wave shielding apparatus according to an embodiment of the present invention.

The molding member 15 is formed on the substrate 10 so as to enclose the electronic devices 10a and 10b disposed on the substrate 10 as shown in FIG. Not shown. The molding member 15 may be formed on the entire surface of the substrate 10 except for the antenna of the module. Then, as shown in Fig. 5B, a concave-convex pattern 15a is formed on the surface of the molding member 15 by using an ion beam and plasma. The concave-convex pattern 15a can be formed on the side surface of the molding member 15 though not shown.

The first conductive layer 20a is formed to surround the molding member 15, as shown in FIG. The first conductive layer 20a may be formed by a sputtering method or may be formed using a cylindrical sputtering apparatus so as to be formed on a side surface of the molding member 15. [ At this time, the first conductive film 20a may be formed along the concave-convex pattern 15a.

5D, a second conductive layer 20b is formed on the surface of the first conductive layer 20a. The second conductive layer 20b may be formed by a sputtering method or an electroless plating method. When the sputtering method is used, the second conductive layer 20b may be formed using a cylindrical sputtering apparatus as described above. . The second conductive film 20b may also be formed along the uneven pattern 15a. At this time, the thickness d2 of the second conductive film 20b is thicker than the thickness d1 of the first conductive film 20a.

For example, the first conductive layer 20a may include nickel (Ni), nickel chromium (NiCr), and the second conductive layer 20b may include copper (Cu). In this case, the materials of the first and second conductive films 20a and 20b are not limited thereto. When the first conductive layer 20a is formed of nickel (Ni) or nickel chromium (NiCr) as described above, the thickness d1 of the first conductive layer 20a may be in the range of 0.1 탆 to 0.5 탆, When the second conductive film 20b is formed of copper, the thickness d2 of the second conductive film 20b may be 0.6 탆 to 1 탆.

As shown in FIG. 5E, the third conductive layer 20c is formed to surround the second conductive layer 20b. The third conductive film 20c substantially blocks electromagnetic waves generated from the electronic devices 10a and 10b and may be formed using an electroplating method.

Then, as shown in FIG. 5F, a fourth conductive layer 20d is formed to surround the third conductive layer 20c. The fourth conductive layer 20d may be formed using an electroplating method. The fourth conductive film 20d may be formed at the outermost portion of the shielding member 20 to prevent discoloration and oxidation of the shielding member 20. [

As described above, the shielding member 20 including the first, second, third and fourth conductive films 20a, 20b, 20c and 20d exposes the antenna as described above, And the electronic devices 10a and 10b may be structured to be completely sealed by the substrate 10, the molding member 15, and the shielding member 20.

Therefore, even when the module including the electromagnetic wave shielding device of the embodiment of the present invention is applied to a high-power product, electromagnetic interference can be effectively prevented and adhesion of the shielding member 20 and the molding member 15 is improved, It is possible to prevent a blister from being generated at the interface between the molding member 15 and the molding member 15. [

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. It will be clear to those who have knowledge.

10: Substrate 10a, 10b: Electronic element
15: molding member 15a: concave / convex pattern
20: shield member 20a: first conductive film
20b: second conductive film 20c: third conductive film
20d: fourth conductive film

Claims (7)

A molding member surrounding at least one electronic component mounted on a substrate; And
And a shielding member including a first conductive film, a second conductive film, a third conductive film, and a fourth conductive film stacked in order to surround the molding member,
And the thickness of the first conductive film is thinner than that of the second conductive film. The method according to claim 1,
Wherein the thickness of the first conductive film is 0.1 占 퐉 to 0.5 占 퐉, and the thickness of the second conductive film is 0.6 占 퐉 to 1 占 퐉. The method according to claim 1,
Wherein the first conductive film comprises nickel or nickel chromium,
And the second conductive film comprises copper. The method according to claim 1,
Wherein the molding member surrounds all of at least one electronic device. The method according to claim 1,
And an uneven pattern formed on at least one interface between the molding member and the shielding member. 6. The method of claim 5,
And the first conductive film and the second conductive film are formed along the concavo-convex pattern on the surface of the molding member. The method according to claim 1,
Wherein the shield member surrounds at least one side of the substrate.

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