KR20170101550A

KR20170101550A - Probe block and method for manufacturing the same

Info

Publication number: KR20170101550A
Application number: KR1020160024219A
Authority: KR
Inventors: 안윤태; 고기돈
Original assignee: (주) 루켄테크놀러지스
Priority date: 2016-02-29
Filing date: 2016-02-29
Publication date: 2017-09-06
Also published as: KR101816703B1

Abstract

According to the present invention, suggested is a probe block. The probe block according to an embodiment of the present invention includes: an upper guide film which includes a plurality of first holes vertically penetrated; a lower guide film which includes a plurality of second holes vertically penetrated at positions corresponding to the plurality of first holes; at least one guide unit which is located between the upper and lower guide films and includes a plurality of third holes vertically penetrated; and a plurality of probe pins mounted by passing through the first holes, the second holes, and the third holes. A plurality of ground holes vertically penetrated are formed on the upper guide film, the lower guide film, and the guide unit. A plurality of ground parts made of conductive materials are formed in the ground holes. Accordingly, the present invention can reduce noise generated due to a fast test signal.

Description

[0001] PROBE BLOCK AND METHOD FOR MANUFACTURING THE SAME [0002]

The present invention relates to a probe block and a manufacturing method thereof.

Generally, a probe block is manufactured by electrically connecting a wafer and a semiconductor device inspection equipment in order to test the performance during or after fabrication of the semiconductor device, and transmitting the electrical signal of the semiconductor device inspection equipment onto the semiconductor die, And transmits a signal returning from the semiconductor die to the semiconductor device testing equipment.

In this connection, Korean Patent Registration No. 1305390 (name: a needle mounting block for a probe card) includes a mounting plate on which an insertion groove is formed and a needle fixed to the mounting plate. The needle is electrically connected to the pad of the semiconductor element And a probe unit inserted into the insertion groove and supporting the probe unit, wherein the insertion unit is formed with a contact end for applying an adhesive force to one side in a state where the insertion unit is inserted into the insertion groove, The insertion groove has a needle mounting block for a probe card in which an inclined surface is formed at a predetermined angle on a first contact surface which is a surface which is in contact with an opposite side surface of the close contact end.

In the conventional probe block, there is a problem that noise is generated due to narrowing of the interval of the probe pins according to the narrow pitch of pads of semiconductor devices. Particularly, such noise is more severely generated as the transmission speed of the inspection current is increased, and there is a problem that loss of the inspection current and reliability at the time of inspection are greatly lowered.

It is an object of the present invention to provide a probe block capable of reducing the occurrence of noise caused by an increase in test signal.

According to a first aspect of the present invention, there is provided a probe block comprising: an upper guide film having a plurality of first holes vertically penetrated; A lower guide film having a plurality of second holes vertically penetrated at positions corresponding to the plurality of first holes; At least one guide portion positioned between the upper and lower guide films and having a plurality of third holes vertically penetrated therethrough; And a plurality of probe pins mounted through the first hole, the second hole, and the third hole, wherein the upper guide film, the lower guide film, and the guide portion are formed with a plurality of ground holes vertically penetrated, And a plurality of ground portions made of a conductive material in the holes.

According to a second aspect of the present invention, there is provided a method of manufacturing a probe block, comprising: fabricating an upper guide film; Fabricating a lower guide film; Fabricating a guide portion; Layering a lower guide film and a guide portion, forming a conductive material in a ground hole formed in the lower guide film and the guide portion; Inserting a probe pin into the stacked lower guide film and the guide portion; Stacking an upper guide film on the guide part; And filling the ground hole formed in the upper guide film with a conductive material to form a ground portion.

According to a third aspect of the present invention, there is provided a probe card comprising: a probe block; a main printed circuit board electrically connected to the probe block; and a probe block disposed on the main printed circuit board and electrically connecting the probe block and the main printed circuit board Wherein the main printed circuit board includes a plurality of second ground portions made of a conductive material, the interposer is made of a conductive material, and the third printed circuit board includes a third grounding portion connecting the ground portion of the probe block and the second grounding portion, And a ground portion.

According to the above-mentioned problem solving means of the present invention, it is possible to greatly improve the effect of reducing the generation of noise as the test signal increases as a plurality of ground portions are formed in the probe block.

In addition, the probe block of the present invention is located in the hole into which the probe pin is inserted and has the effect of minimizing wear and deformation due to repetitive contact, including the wear prevention portion having the same strength as the probe block.

1 is a partial cross-sectional view of a probe block according to a first embodiment of the present invention.
2 is a partial cross-sectional view of a probe block according to a second embodiment of the present invention.
3 is a partial plan view of a probe block according to a second embodiment of the present invention.
4 is a flowchart illustrating a method of manufacturing a probe block according to an embodiment of the present invention.
5 is a cross-sectional view of a probe card according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It should be understood, however, that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, the same reference numbers are used throughout the specification to refer to the same or like parts.

Throughout this specification, when a part is referred to as being "connected" to another part, it is not limited to a case where it is "directly connected" but also includes the case where it is "electrically connected" do.

Throughout this specification, when a member is " on " another member, it includes not only when the member is in contact with the other member, but also when there is another member between the two members.

Throughout this specification, when an element is referred to as "including " an element, it is understood that the element may include other elements as well, without departing from the other elements unless specifically stated otherwise. The terms "about "," substantially ", etc. used to the extent that they are used throughout the specification are intended to be taken to mean the approximation of the manufacturing and material tolerances inherent in the stated sense, Accurate or absolute numbers are used to help prevent unauthorized exploitation by unauthorized intruders of the referenced disclosure. The word " step (or step) "or" step "used to the extent that it is used throughout the specification does not mean" step for.

FIG. 1 is a partial cross-sectional view of a probe block according to a first embodiment of the present invention, FIG. 2 is a partial cross-sectional view of a probe block according to a second embodiment of the present invention, FIG. 4 is a flowchart illustrating a method of manufacturing a probe block according to an embodiment of the present invention, and FIG. 5 is a cross-sectional view of a probe card according to an embodiment of the present invention.

First, a probe block 10 (hereinafter referred to as 'the present probe block 10') according to an embodiment of the present invention will be described with reference to FIG.

The probe block 10 includes an upper guide film 100, a lower guide film 200, a guide portion 300, and a plurality of probe pins 400.

The probe pin 400 contacts the semiconductor element and can transfer an electrical signal transmitted from the semiconductor element testing apparatus onto the semiconductor element. Illustratively, the probe pin 400 comprises tungsten and gold, and may be Teflon coated on the outer surface. Accordingly, the probe pin 400 is excellent in electrical conductivity and excellent in insulating property.

5, a plurality of probe pins 400 receives an electric signal of an external inspection apparatus from the main printed circuit board 20, transmits the electric signal to the semiconductor device, receives a signal coming back from the semiconductor device It can be transferred to the main printed circuit board 20. In addition, the probe pin 400 and the main printed circuit board 20 may be electrically connected through the interposer 30.

The probe block 10 includes an upper guide film 100 provided with a plurality of first holes 110 that are vertically penetrated and a plurality of second holes 110 vertically penetrated at positions corresponding to the plurality of first holes 110, And a lower guide film 200 having a hole 210 therein. In addition, the upper guide film 100 and the lower guide film 200 may be arranged at a predetermined interval in the vertical direction.

At this time, the upper and lower guide films 200 may be polyimide films.

The upper guide film 100 includes a first conductive film 130 located on the front surface excluding the first hole 110 and the lower guide film 200 is positioned on the front surface excluding the second hole 210 The second conductive layer 230 may include a second conductive layer 230. The above-described front surface may mean the entire surface exposed to the outside.

The first and second conductive films 130 and 230 may be a conductive material. At this time, the conductive material may include at least one of Au, Pt, Ag, HgCu 2 H, Pb, Sn, Ni, and Fe Zn, and may include at least one of Au and Ni .

The probe block 10 may include at least one guide part 300 positioned between the upper and lower guide films 200 and having a plurality of third holes 310 vertically penetrated. For example, as shown in FIG. 1, two guide units 300 may be provided between the upper and lower guide films 100 and 200, but not limited thereto, two or more guide units 300 may be disposed . Further, the guide portion 300 may be a wafer containing silicon.

The guide portion 300 may include an insulating layer 340 disposed on the front surface and a third conductive layer 330 disposed on the front surface of the insulating layer 340. At this time, the insulating film 340 may be SiO, but it is not limited thereto and may be a material having an insulating property. In addition, the third conductive layer 330 may be a conductive material, and may be the same material as the first and second conductive layers 130 and 230 described above.

In addition, the probe pin 400 may be mounted through the first hole 110, the second hole 210, and the third hole 310. In addition, the first hole 110 and the second hole 210 may be smaller than the third hole 310.

Specifically, the probe pin 400 is inserted after the lower guide film 200 and the guide portion 300 are laminated, and the upper guide film 100 is laminated on the upper surface of the guide portion 300, 400 may be fixed.

The upper guide film 100, the lower guide film 200 and the guide part 300 are provided with a plurality of ground holes 120, 220 and 320 which are vertically penetrated. In the ground holes 120, 220 and 320, A ground portion 500 made of a conductive material may be formed.

A plurality of first ground holes 120 are formed in the upper guide film 100 and upper and lower holes are formed in the lower guide film 200 at positions corresponding to the first ground holes 120, A plurality of second ground holes 220 are formed in the guide portion 300 and a plurality of third ground holes 220 are formed at the positions corresponding to the first and second ground holes 120 and 220, 320 are formed. Illustratively, the ground 500 may be electrically connected to the ground of the interposer.

The grounding part 500 may be formed by filling the first to third grounding holes 120, 220 and 320 with a conductive material. At this time, the ground unit 500 may be the same material as the first to third conductive films 130, 230, and 330, but is not limited thereto and may be a conductive material.

Accordingly, the effect of reducing the noise generated as the test signal of the probe pin 400 is increased due to the grounding part 500 can be greatly improved.

Referring to FIG. 1, the upper guide film 100 includes a first waveguide part 140 located on at least an inner surface of the first hole 110 and formed of a material having the same hardness as that of the probe pin 400 can do. However, the present invention is not limited thereto, and the first waveguide 140 may be extended to the upper surface or the lower surface of the upper guide film 100.

The lower guide film 200 may include a second waveguide 240 positioned on at least an inner surface of the second hole 210 and formed of a material having the same hardness as that of the probe pin 400. However, the present invention is not limited thereto, and the second waveguide 240 may be extended to the upper surface or the lower surface of the lower guide film 200.

For example, the first and second waveguide units 140 and 240 may be the same material as the probe pin 400.

That is, the first and second waveguide portions 140 and 240 are located on at least inner surfaces of the first and second holes 110 and 210, which are in contact with the probe pin 400, It is possible to minimize deformation.

The probe pin 400, the upper and lower guide films 200, and the guide unit 300 may be manufactured through a MEMS (Micro Electro Mechanical System) process.

A probe block 10 according to a second embodiment of the present invention will be described with reference to Figs. 2 and 3. Fig.

The probe block 10 according to the second embodiment of the present invention includes resistors, capacitors, and resistors that connect the first and the second waveguide portions 140 and 140 and the adjacent first waveguide portion 140, And an electronic device 600 having at least one of the transistors.

For example, the first probe pin 410 may be in contact with the first labyrinth branch 140, and the second probe pin 420 may be in contact with the adjacent first labyrinth branch 140. Also, the resistor may be electrically connected to the first and second probe pins 410 and 420, and one end of the capacitor may be connected to the resistor and the other end of the capacitor may be connected to the adjacent grounding unit 500.

Accordingly, when the electronic device 600 is an RC circuit or a resistor, noise of a test signal, which is a very high frequency signal transmitted to the probe pin, can be removed. In addition, when the electronic device 600 is a transistor, the first and second probe pins 410 and 420 can be selectively controlled to supply an electric signal.

The probe block 10 may further include an insulating layer 150 disposed between the electronic device 600 and the upper film guide 100. Thus, the electronic device 600 can stably control the electric signal.

A method of manufacturing the probe block 10 according to an embodiment of the present invention will be described with reference to FIG.

In step S110, the upper guide film 100 can be manufactured.

Step S110 includes preparing a film of a thin film (S111), forming a first hole 110 and a first ground hole 120 through which one end of the probe pin 400 is inserted into the film S112), and forming a conductive material on the entire surface of the film except for the first hole (S113).

Illustratively, the step of forming the first hole 110 and the first ground hole 120 comprises the steps of applying a photoresist on top of the film to form a photoresist layer, Patterning the photoresist layer with a mask corresponding to the shape of the first ground hole 110 and the first ground hole 120, forming a hole through the etching process, and removing the photoresist, The detailed description will be omitted.

The step of forming the conductive material (S113) may include, but is not limited to, depositing a conductive material on the film through a plating process.

Step S110 may include forming a first waveguide portion 140 having the same hardness as that of the probe pin 400 on the inner surface of the first hole 110. [ Illustratively, the first waveguide portion 140 may be formed by plating, but is not limited thereto.

In addition, step S110 may further include forming an insulating layer 150 on the upper guide film 100 (S114). The insulating layer 150 is a structure for forming the electronic device 600 described later.

In step S120, the lower guide film 200 can be manufactured, and the upper guide film 100 may be manufactured.

In more detail, step S120 includes preparing a film of a thin film (S121), a plurality of second holes 210 and a plurality of second ground holes 220 into which the ends of the probe pins 400 are inserted, And forming a conductive material on the entire surface of the film except for the second hole 210 (S123).

Step S120 may include forming a second semi-insulating portion 240 having the same hardness as the probe pin 400 on the inner surface of the second hole 210 (S124). Illustratively, the second semiconductive portion 240 can be formed through a plating process, but is not limited thereto.

In step S130, the guide portion 300 can be manufactured.

Step S130 includes preparing a wafer S131, forming a third hole 310 and a third ground hole 320 in which the probe pin 400 is inserted into the wafer S132, Forming an insulating film 340 (S133), and forming a conductive material on the entire surface of the insulating film 340 (S134).

Illustratively, forming the conductive material (S134) may, but is not limited to, deposit a conductive material on the wafer through a plating process. The insulating film 340 may be a thermally oxidized film formed by calculating a wafer.

In step S140, the lower guide film 200 and the guide part 300 may be laminated, and a conductive material may be formed in the ground hole formed in the lower guide film 200 and the guide part 300. [

In detail, when the lower guide film 200 and the guide 300 are stacked, a conductive material may be formed in the second ground hole 220 and the third ground hole 320, which are in communication with each other. At this time, the conductive material may be the same material as the first to third conductive films 130, 230, and 330 described above.

In step S150, the probe pin 400 can be inserted into the stacked lower guide film 200 and the guide part 300. [

The probe pin 400 may be inserted and fixed in the second hole 210 of the lower guide film 200 and the third hole 310 of the guide part 300 in step S150.

In step S160, the upper guide film 100 may be laminated on the guide part 300. [

In step S170, the grounding hole formed in the upper guide film 100 may be filled with a conductive material to form the grounding part 500.

The grounding part 500 is formed by stacking the upper guide film 100 on the upper part of the guide part 300, The first ground hole 120 of the film 100 may be filled with a conductive material so that the conductive material located in the first through third ground holes 120, have. At this time, the conductive material may be the same material as the first to third conductive films 130, 230, and 330 described above.

The electronic device 600 connecting the probe pin 400 and the probe pin 400 adjacent to the probe pin 400 is provided on the insulating layer 150 formed on the upper guide film 100 in step S180, Can be formed. At this time, the electronic device 600 may not be directly connected to the probe pin 400, but may be connected to the first and second waveguide units 140 and 240 described above.

The electronic device 600 described above may include at least one of a resistor, a capacitor, and a transistor.

By forming the electronic device 600 on the insulating layer 150, the test signal transmitted through the probe pin 400 can be controlled. For example, by forming the resistor and the capacitor to form the RC circuit, the noise of the test signal can be drastically reduced, and the test signal flowing through the two probe pins 400 can be switched by forming the transistor.

A probe card 1 according to an embodiment of the present invention will be described with reference to FIG.

The probe card 1 may be a device that makes one-to-one contact with a plurality of pads on a wafer and transfers the electrical signal transmitted from the semiconductor testing device to the semiconductor die on the wafer.

The probe card 1 includes a probe block 10, a main printed circuit board 20, and an interposer 30.

The main printed circuit board 20 may receive an external test signal, output an electrical signal, and be electrically connected to the interposer 30. [

The interposer 30 is located above the probe block 10 and the main printed circuit board 20 and can electrically connect the probe block 10 and the main printed circuit board 20. Illustratively, the interposer 30 may include a circuit pattern in which one side contacts the probe pin 400 and the other side contacts a connection portion of the main printed circuit board 20. [

5, the main printed circuit board 20 includes a plurality of second ground portions 21 made of a conductive material, the interposer 30 is made of a conductive material, And a third grounding part 31 connecting the ground 11 and the second grounding part 21 of the main printed circuit board 20. Accordingly, the ground portion, the second ground portion, and the third ground portion 11, 21, 31 can be electrically connected to each other.

It will be understood by those of ordinary skill in the art that the foregoing description of the embodiments is for illustrative purposes and that those skilled in the art can easily modify the invention without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

10: Probe block
100: upper guide film
110: first hole 120: first ground hole
130: first conductive film 140: first emitter region
150: insulating layer
200: Lower guide film
210: second hole 220: second ground hole
230: second conductive film 240: second abrasion prevention part
300: guide portion
310: third hole 320: third ground hole
330: Third conductive film 340: Insulating film
400: probe pin 500: ground
600: electronic device

Claims

In the probe block,
An upper guide film having a plurality of first holes vertically penetrated therethrough;
A lower guide film having a plurality of second holes vertically penetrated at positions corresponding to the plurality of first holes;
At least one guide portion positioned between the upper and lower guide films and having a plurality of third holes vertically penetrated therethrough; And
And a plurality of probe pins mounted through the first hole, the second hole, and the third hole,
The upper guide film, the lower guide film, and the guide portion are formed with a plurality of ground holes,
And a plurality of ground portions made of a conductive material in the ground holes.

The method according to claim 1,
The guide portion
The insulating film located on the front side and
And a third conductive film located on the entire surface of the insulating film.

The method according to claim 1,
Wherein the upper guide film includes a first conductive film located on the entire surface excluding the first hole,
And the lower guide film includes a second conductive film located on the entire surface excluding the second hole.

The method according to claim 1,
The upper guide film
And a first abrasion preventing portion located on at least an inner surface of the first hole and formed of a material having the same hardness as that of the probe pin,
The lower guide film
And a second abrasion preventing portion located on at least an inner surface of the second hole and formed of a material having the same hardness as that of the probe pin.

5. The method of claim 4,
And a plurality of electronic elements each having at least one of a resistor, a capacitor, and a transistor for connecting the first and the second waveguide portions to a first abrasion preventing portion adjacent to the first and the second waveguide portions.

6. The method of claim 5,
And an insulating layer positioned between the electronic device and the upper film guide portion.

In the method for producing a probe block,
Fabricating an upper guide film;
Fabricating a lower guide film;
Fabricating a guide portion;
Stacking the lower guide film and the guide portion, and forming a conductive material in the ground hole formed in the lower guide film and the guide portion;
Inserting a probe pin into the stacked lower guide film and the guide portion;
Stacking the upper guide film on the guide part; And
And filling a ground hole formed in the upper guide film with a conductive material to form a ground portion.

8. The method of claim 7,
The step of fabricating the upper guide film
And forming an insulating layer on the upper guide film,
And forming an electronic device connecting the probe pin and the probe pin adjacent to the probe pin on the insulating layer.

8. The method of claim 7,
The step of fabricating the upper guide film
Preparing a film of a thin film;
Forming a plurality of first holes and a plurality of first ground holes through which one end of the probe pin is inserted into the film; And
And forming a conductive material on the entire surface of the film except for the first hole.

10. The method of claim 9,
The step of fabricating the upper guide film
And forming a first wear-resistant portion having the same hardness as the probe pin on the inner surface of the first hole.

8. The method of claim 7,
The step of fabricating the lower guide film
Preparing a film of a thin film;
Forming a plurality of second holes and a plurality of second ground holes into which the other end of the probe pin is inserted; And
And plating a conductive material on the entire surface of the film except for the second hole.

12. The method of claim 11,
The step of fabricating the lower guide film
And forming a second wear-resistant portion having the same hardness as the probe pin on the inner surface of the second hole.

8. The method of claim 7,
The step of fabricating the guide portion
Preparing a wafer;
Forming a plurality of third holes and a plurality of third ground holes for inserting the probe pins into the wafer;
Forming an insulating film on a front surface of the wafer; And
And forming a conductive material on the entire surface of the insulating film.

In the probe card,
A probe block according to any one of claims 1 to 6;
A main printed circuit board electrically connected to the probe block; And
And an interposer located above the probe block and the main printed circuit board and electrically connecting the probe block to the main printed circuit board,
Wherein the main printed circuit board includes a plurality of second ground portions made of a conductive material,
Wherein the interposer is made of a conductive material and includes a third grounding portion connecting the grounding portion of the probe block to the second grounding portion.