KR20170080140A - Flexible display device, and method for fabricating the same - Google Patents

Abstract

The present invention provides a flexible display device capable of preventing damage to a surface film of a base film or damage of a thin film transistor caused by a laser generated during a process of separating a base film and an auxiliary substrate, and a method of manufacturing the same. A flexible display device according to an embodiment of the present invention includes a base film, a display region including thin film transistors disposed on a first side of the base film, and a non-display region including pads disposed on at least one side of the display region And an engraved pattern is provided on a second surface of the base film that is opposite to the first surface.

Description

[0001] FLEXIBLE DISPLAY DEVICE, AND METHOD FOR FABRICATING THE SAME [0002]

Embodiments of the present invention relate to a flexible display device and a method of manufacturing the same.

Background of the Invention As the age of the information society develops, the importance of flat panel display devices (FPDs) having excellent characteristics such as thinning, lightening, and low power consumption is increasing. Examples of the flat panel display include a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting display (OLED). Recently, Electrophoretic display devices (EPD) are also widely used.

Among them, liquid crystal display devices and organic light emitting display devices including thin film transistors are excellent in resolution, color display, image quality, and are widely commercialized as display devices for televisions, notebooks, tablet computers, or desktop computers. Such liquid crystal display devices and organic light emitting display devices are also being developed as flexible display devices.

Conventional flexible display panels include a base film, a buffer layer, a thin film transistor, and an organic light emitting element. The base film is provided on the auxiliary substrate and may be a flexible plastic film. A buffer layer is provided on the base film, and a thin film transistor is provided on the buffer layer. The organic light emitting element is provided on the thin film transistor, and is electrically connected to the thin film transistor. Such a conventional flexible display panel can be manufactured by sequentially forming a base film, a buffer layer, a thin film transistor and an organic light emitting element on an auxiliary substrate, and then separating the base film and the auxiliary substrate using a laser.

However, in the conventional flexible display device, the surface of the base film may be damaged in the process of separating the base film and the auxiliary substrate, or the thin film transistor may be damaged by the laser. As a result, the reliability of the flexible display panel may be deteriorated.

The present invention provides a flexible display device capable of preventing damage to a surface film of a base film or damage of a thin film transistor caused by a laser generated during a process of separating a base film and an auxiliary substrate, and a method of manufacturing the same.

A flexible display device according to an embodiment of the present invention includes a base film, a display region including thin film transistors disposed on a first side of the base film, and a non-display region including pads disposed on at least one side of the display region And an engraved pattern is provided on a second surface of the base film that is opposite to the first surface.

A method of manufacturing a flexible display device according to an embodiment of the present invention includes the steps of: patterning a sacrificial layer on an auxiliary substrate; forming a base film to cover the sacrificial layer on the auxiliary substrate; And separating the auxiliary substrate and the base film by using a laser so that the opposite surface of the base film has an engraved pattern on the second surface.

The embodiment of the present invention is provided with the engraved pattern on the second surface which is the opposite side of the first surface of the base film provided with the thin film transistor. This engraved pattern may be provided by a patterned sacrificial layer on the auxiliary substrate in the process of forming the base film. The embodiment of the present invention can prevent the surface damage of the base film or the damage of the thin film transistor due to the laser generated in the process of separating the base film from the auxiliary substrate.

In addition to the effects of the present invention mentioned above, other features and advantages of the present invention will be described below, or may be apparent to those skilled in the art from the description and the description.

1 is a perspective view showing a flexible display device according to an embodiment of the present invention;
Fig. 2 is a plan view showing a display region and a non-display region, a gate driver, a source drive IC, a flexible film, a circuit board, and a timing control portion of the first substrate of Fig.
3 is a plan view showing pixels of a display area according to an embodiment of the present invention.
4 is a cross-sectional view showing an example of I-I 'of FIG. 2;
5 is a cross-sectional view showing an example of II-II 'of FIG. 3;
6 is a flow chart showing a method of manufacturing a flexible display device according to an embodiment of the present invention.
7A to 7F are cross-sectional views illustrating a method of manufacturing a flexible display device according to an embodiment of the present invention.

The meaning of the terms described herein should be understood as follows.

The word " first, "" second," and the like, used to distinguish one element from another, are to be understood to include plural representations unless the context clearly dictates otherwise. The scope of the right should not be limited by these terms. It should be understood that the terms "comprises" or "having" does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof. It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, Means any combination of items that can be presented from more than one. The term "on" means not only when a configuration is formed directly on top of another configuration, but also when a third configuration is interposed between these configurations.

Hereinafter, preferred embodiments of the flexible display device and the manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals are used to denote like elements throughout the drawings, even if they are shown on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

1 is a perspective view showing a flexible display device according to an embodiment of the present invention. 2 is a plan view showing a display region and a non-display region, a gate driver, a source drive IC, a flexible film, a circuit board, and a timing control portion of the first substrate of FIG. 3 is a plan view showing pixels of a display area according to an embodiment of the present invention.

In Fig. 1, the X axis represents the direction parallel to the gate lines, the Y axis represents the direction parallel to the data lines, and the Z axis represents the height direction of the flexible display device. The configuration not shown in the perspective view of FIG. 1 and the plan view of FIG. 2 is shown by a dotted line. Hereinafter, a flexible display device according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3. FIG.

1 to 3, a flexible display device according to an embodiment of the present invention includes a flexible display panel 100, a gate driver 200, an integrated circuit (IC) 310 A flexible film 330, a circuit board 350, and a timing control unit 400. [

The flexible display panel 100 includes a display area DA and a non-display area NDA. In the display area DA of the flexible display panel 100, gate lines, data lines, and pixels are formed. The pixels P of the display area NA include a plurality of light emitting areas RE, GE, and BE, and the light emitting areas RE, GE, and BE are formed in intersecting areas of the gate lines and the data lines. do. The display area DA displays an image by the pixels P. [ In the present invention, each of the pixels P includes a red light emitting region RE, a green light emitting region GE, and a blue light emitting region BE. However, the present invention is not limited thereto. That is, each of the pixels P may further include a white light emitting region as well as a red light emitting region RE, a green light emitting region GE, and a blue light emitting region BE. Banks are disposed between the light emitting regions RE, GE, and BE. The light emitting regions RE, GE, and BE are partitioned by the banks. The non-display area NDA is disposed at the edge of the display area DA. The non-display area NDA may include a gate driver 200 and pads.

The flexible display panel 100 includes a protective film 120, a base film 110, and an upper film 190. The protective film 120 may be attached to the second side of the base film 110 to protect and support the base film 110. The base film 110 may be a flexible plastic film such as polyimide. The top film 190 may be a protection film when the display panel 110 is implemented in a bottom emission manner and may be a polyimide It may be a plastic film that is flexible as well.

The gate driver 200 supplies gate signals to the gate lines according to a gate control signal input from the timing controller 400. 1, the gate driver 200 is formed in a gate driver in panel (GIP) manner on one side of the display area DA of the flexible display panel 100, but the present invention is not limited thereto. That is, the gate driver 200 may be formed on the outside of both sides of the display area DA of the flexible display panel 100 by a GIP method, or may be formed of a driving chip, mounted on a flexible film, Or may be attached to the flexible display panel 100 in a similar manner.

The source drive IC 310 receives the digital video data and the source control signal from the timing controller 400. The source driver IC 310 converts the digital video data into analog data voltages according to the source control signal and supplies the analog data voltages to the data lines. When the source drive IC 310 is manufactured as a driving chip, the source drive IC 310 may be mounted on the flexible film 330 using a chip on film (COF) method or a chip on plastic (COP) method.

The upper film 190 may be smaller than the base film 110. Therefore, a part of the base film 110 can be exposed without being covered by the upper film 190. [ Pads, such as data pads, are provided on a portion of the exposed base film 110 that is not covered by the top film 190. Wires connecting the pads to the source drive IC 310 and wirings connecting the pads and the wirings of the circuit board 350 may be formed in the flexible film 330. The flexible film 330 is attached to the pads using an anisotropic conducting film, whereby the pads and the wirings of the flexible film 330 can be connected.

The circuit board 350 may be attached to the flexible films 330. The circuit board 350 may be mounted with a plurality of circuits implemented with driving chips. For example, the timing controller 400 may be mounted on the circuit board 350. The circuit board 350 may be a printed circuit board or a flexible printed circuit board.

The timing controller 400 receives digital video data and timing signals from an external system board (not shown). The timing controller 400 generates a gate control signal for controlling the operation timing of the gate driver 200 and a source control signal for controlling the source driver ICs 310 based on the timing signal. The timing controller 400 supplies a gate control signal to the gate driver 200 and a source control signal to the source driver ICs 310. [

Although the flexible display device according to the embodiment of the present invention has been described as being implemented with an organic light emitting display, it may be implemented as a liquid crystal display (LCD) or an electrophoresis display It is possible.

4 is a cross-sectional view showing an example of I-I 'of FIG. 5 is a cross-sectional view showing an example of II-II 'of FIG. 4 is a cross-sectional view showing a cross section of the display area DA and the non-display area NDA shown in Fig. FIG. 5 is a cross-sectional view showing a cross section of the light emitting regions RE and GE and the non-light emitting region NEA of the display region DA shown in FIG.

4 and 5, the flexible display panel 100 includes a display area DA and a non-display area NDA. The display area DA of the flexible display panel 100 includes light emitting areas RE and GE and a non-light emitting area NEA. The light emitting regions RE and GE may be provided with organic light emitting devices OLEDs and color filters RC and GC. The non-light emitting region NEA may be provided with banks 170 for partitioning the thin film transistors T and the light emitting regions RE and GE. The non-display area NDA is disposed at the edge of the display area DA. In this non-display area NDA, pads 160 may be provided.

More specifically, the flexible display panel 100 includes a protective film 120, a base film 110, a buffer layer 130, a thin film transistor T, a passivation layer PAS, a planarization layer PAC, an organic light emitting diode OLED, An encapsulating layer 180, and an upper film 190.

The protective film 120 is attached to the second surface 110b of the base film 110. [ The protective film 120 protects and supports the base film 110. For example, the protective film 120 may be a PET (polyethylene terephthalate) film or a PC (poly carbonate) film, but is not limited thereto.

The base film 110 is provided on the protective film 120. On the first surface 110a of the base film 110, a thin film transistor T and pads 160 are provided. The engraved patterns 112 are formed on the second surface 110b which is the opposite side of the first surface 110a of the base film 110. [ Although one engraved pattern 112 is shown in the drawing, at least one engraved pattern 112 may be provided on the entire second face 110b of the base film 110 corresponding to the non-display area NDA . The engraved patterns 112 are recessed from the second surface 110b of the base film 110 in the upward direction (Z-axis direction) in which the pads 160 are provided. The engraved patterns 112 are arranged at positions corresponding to the non-display area NDA. Therefore, the thickness of the base film 110 in the non-display area NDA is thinner than the thickness of the base film 110 in the display area DA. The engraved patterns 112 are arranged at positions corresponding to the non-emission areas NEA among the display areas NA. The engraved patterns 112 are arranged at positions corresponding to the thin film transistors T. Therefore, the thickness of the base film 110 in the non-emission region NEA is thinner than the thickness of the base film 110 in the emission regions RE and GE.

The base film 110 may be a flexible plastic film. For example, the base film 110 may include a cellulose resin such as TAC (triacetyl cellulose) or DAC (diacetyl cellulose), a cycloolefin polymer (COP) such as Norbornene derivatives, a cycloolefin copolymer (COC) Polyolefin, polyvinyl alcohol (PVA), polyether sulfone (PES), polyetheretherketone (PEEK), polyetheretherketone (PEEK) such as acrylic resin such as poly (methylmethacrylate), polycarbonate, polyethylene (PE) (Polyimide), a polysulfone (PSF), a fluoride resin, or the like, such as polyethylene terephthalate (PET), polyetherimide (PEI), polyethylenenaphthalate (PEN) The base film 110 will be described later in detail with reference to FIGS. 6 and 7A to 7F.

In addition, an adhesive member 125 is provided between the base film 110 and the protective film 120. The adhesive member 125 is provided between the second surface 110b of the base film 110 and the protective film 120 to bond the base film 110 and the protective film 120 together. The adhesive member 125 is filled between the engraved patterns 122 and the protective film 120 to bond the base film 110 and the protective film 120. For example, the adhesive member 125 may be a transparent adhesive such as an OCA (optically clear adhesive) or a transparent adhesive such as an OCR (optically clear resin), but is not limited thereto.

The buffer layer 130 is provided on the first surface 110a of the base film 110. [ The buffer layer 130 prevents moisture from penetrating into the flexible display panel 100 from the base film 110, which is vulnerable to moisture permeation, to deteriorate characteristics of the thin film transistors T. In addition, the buffer layer 130 prevents impurities such as metal ions from being diffused from the base film 110 to penetrate the active layer ACT. For this purpose, the buffer layer 130 may include at least one inorganic film. The buffer layer 130 may be, for example, silicon dioxide (SiON), silicon nitride (SiNx), silicon oxynitride (SiON), or a multilayer thereof.

The thin film transistor T is provided on the first surface 110a of the base film 110. [ The thin film transistor T is provided in the display area DA of the base film 110. [ The thin film transistor T includes an active layer ACT, a gate insulating film GI, a gate electrode GE, an interlayer insulating film ILD, a source electrode SE and a drain electrode DE.

The active layer (ACT) is provided on the buffer layer (130). The active layer ACT has a first end region A1 located on the side of the source electrode SE and a second end region A2 located on the side of the drain electrode DE and a second end region A2 located between the first end region A1 and the second end region A2. And a region A3. The central region A3 is made of a semiconductor material not doped with a dopant, and the one-end region A1 and the other-end region A2 may be made of a semiconductor material doped with a dopant.

A gate insulating film GI is provided on the active layer ACT. The gate insulating film GI functions to insulate the active layer ACT from the gate electrode GE. The gate insulating film GI covers the active layer ACT and is formed on the entire surface of the display area DA. The gate insulating film GI may be formed of an inorganic film, for example, silicon dioxide (SiNx), silicon nitride (SiNx), silicon oxynitride (SiON), or a multilayer thereof.

The gate electrode GE is provided on the gate insulating film GI. The gate electrode GE overlaps the central region A3 of the active layer ACT with the gate insulating film GI therebetween. The gate electrode GE may be formed of a metal such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) But is not limited to, a single layer or a multi-layer made of any one or an alloy thereof.

An interlayer insulating film ILD is provided on the gate electrode GE. The interlayer insulating film ILD covers the gate electrode GE and may be provided on the entire surface of the base film 110. The interlayer insulating film ILD may be formed of the same inorganic film as the gate insulating film GI, for example, silicon dioxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiON) Do not.

The source electrode SE and the drain electrode DE are disposed apart from each other on the interlayer insulating film ILD. The first contact hole CNT1 for exposing a part of the one end region A1 of the active layer ACT and the part of the other end region A2 of the active layer ACT are formed in the gate insulating film GI and the interlayer insulating film ILD, And a second contact hole CNT2 for exposing the second contact hole. The source electrode SE is connected to the first end region A1 of the active layer ACT via the first contact hole CNT1 and the drain electrode DE is connected to the active layer ACT through the second contact hole CNT2. And the other end area A2. For example, the source electrode SE and the drain electrode DE may be formed of a metal such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium And copper (Cu), or an alloy thereof. However, the present invention is not limited thereto.

The configuration of the thin film transistor T is not limited to the example described above, and can be variously modified to a known configuration that can be easily practiced by those skilled in the art.

When the source electrode SE and the drain electrode DE are provided in the display region NA, pads 160 may be provided in the non-display region NDA. The pads 160 may be the same material as the source electrode SE and the drain electrode DE. On the pads 160, the flexible film 330, which is electrically connected to the circuit board 350 and has the source drive IC 310 mounted thereon, may be attached.

A passivation layer (PAS) is provided on the thin film transistor (T). The passivation layer (PAS) functions to protect the thin film transistor (T). The passivation layer (PAS) may be formed of an inorganic film, for example, silicon dioxide (SiNx), silicon nitride (SiNx), silicon oxynitride (SiON), or a multilayer thereof.

Color filters (RC, GC) are provided on the passivation layer (PAS). The color filters RC and GC are provided in the light emitting regions RE and GE on the base substrate 110 so as not to overlap with the thin film transistor T. [ The color filters RC and GC are used to implement color in the flexible display panel 100. For example, light emitted from the organic light emitting diode OLED passes through the color filters RC and GC, and is emitted to the bottom. The red color filter RC disposed in the red light emitting region RE and the green color filter GC disposed in the green light emitting region GE are shown in the drawing of the present invention. That is, the flexible display panel 100 may further include a blue color filter disposed in the blue light emission region and a white color filter disposed in the white light emission region.

A planarizing layer (PAC) is provided on the passivation layer (PAS). The planarization layer (PAC) covers the thin film transistor (T) and the color filters (RC, GC). The planarization layer PAC functions to flatten the upper portion of the base substrate 110 on which the thin film transistor T and the color filters RC and GC are provided. For example, it may include, but is not limited to, acryl resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, and the like A third contact hole CNT3 is formed in the planarization layer PAC and the passivation layer PAS to expose the drain electrode DE of the thin film transistor T. The third contact hole CNT3 is formed through the third contact hole CNT3, (DE) and the anode electrode (AND) are connected.

The organic light emitting device OLED is connected to the thin film transistor T. The organic light emitting device OLED is provided on the thin film transistor T and the color filters RC and GC. The organic light emitting device OLED includes an anode electrode (AND), an organic light emitting layer (EL), and a cathode electrode (CAT).

The anode electrode AND is connected to the drain electrode DE of the thin film transistor T through the third contact hole CNT3 provided in the passivation layer PAS and the planarization layer PAC. The anode electrode (AND) may be a transparent conductive material having a relatively large work function value, for example, indium-tin-oxide (ITO) or indium-zinc-oxide (IZO). Also, the anode electrode (AND) may be composed of at least two layers including a metal material having excellent reflection efficiency, for example, aluminum (Al), silver (Ag), APC (Ag; Pb; Cu)

The banks 170 are provided between adjacent anode electrodes (AND). The banks 170 electrically isolate the adjacent anode electrodes (AND). The bank 170 covers one side of the anode electrode AND. The bank 170 is disposed in the non-emission area NEA of the display area DA. The banks 170 are disposed to correspond to the engraved patterns 112 provided on the second surface 110b of the base film 110. [ The bank 170 according to an embodiment of the present invention may be a black bank including a light absorbing material. For example, the bank 170 may include an organic film including a black pigment such as carbon black, for example, a polyimide resin, an acryl resin, a benzocyclobutene (BCB) But it is not limited thereto.

When a conventional bank without a light absorbing material is applied, external light incident from the outside into the display panel is reflected by the cathode electrode (CAT) and is emitted to the outside of the display panel, so that the outdoor visibility of the display panel is lowered Problems can arise. However, when the bank 170 including the light absorbing material is applied, external light incident from the outside and reflected light reflected by the cathode electrode (CAT) are all absorbed, so that outdoor visibility of the display panel can be improved .

The organic light emitting layer (EL) is provided on the anode electrode (AND). The organic light emitting layer EL may include a hole transporting layer, an organic light emitting layer, and an electron transporting layer. Furthermore, the organic light emitting layer (EL) may further include at least one functional layer for improving the luminous efficiency and / or lifetime of the light emitting layer.

The cathode electrode (CAT) is provided on the organic light emitting layer (EL) and the bank (170). When a voltage is applied to the anode electrode (AND) and the cathode electrode (CAT), holes and electrons move to the organic light emitting layer (EL) through the hole transporting layer and the electron transporting layer, respectively.

The sealing layer 180 is provided on the thin film transistor T and the organic light emitting element OLED. The sealing layer 180 covers the thin film transistor T and the organic light emitting diode OLED. The sealing layer 180 functions to protect the thin film transistor T and the organic light emitting diode OLED from external impact and to prevent water from penetrating into the flexible display panel 100.

An upper film 190 is provided on the sealing layer 180. The upper film 190 may be a protection film when the flexible display panel 100 is implemented by a bottom emission method and may be a polyimide film when implemented by a top emission method. And the like. However, the present invention is not limited thereto, and the upper film 190 may be a metal layer for protecting the thin film transistor T and the organic light emitting diode OLED from external impact and preventing moisture from penetrating.

The embodiment of the present invention includes the engraved patterns 112 on the second surface 110b which is the opposite side of the first surface 110a of the base film 110 on which the thin film transistor T is provided. These engraved patterns 112 may be provided by a sacrificial layer patterned on the auxiliary substrate in the process of forming the base film 110. Since the engraved patterns 112 provided on the second surface 110b of the base film 110 are disposed so as to correspond to the non-display area NDA, the embodiment of the present invention can separate the base film 110 from the auxiliary substrate It is possible to prevent the surface of the base film 110 from being damaged.

Since the engraved patterns 112 provided on the second surface 110b of the base film 110 are disposed so as to correspond to the non-emissive region NEA, the embodiment of the present invention can separate the base film 110 from the auxiliary substrate 110 It is possible to prevent the damage of the thin film transistor T due to the laser generated in the process. Since the intaglio patterns 112 are not provided in the light emitting regions RE and GE, it is possible to prevent deterioration of optical characteristics such as transmittance and color coordinates of the light emitting regions RE and GE due to the remaining sacrificial layer material .

6 is a flowchart illustrating a method of manufacturing a flexible display device according to an embodiment of the present invention. 7A to 7F are cross-sectional views illustrating a method of manufacturing a flexible display device according to an embodiment of the present invention. This relates to a manufacturing method of a flexible display device according to an embodiment of the present invention shown in Fig. Therefore, the same reference numerals are assigned to the same components, and repetitive descriptions of the repetitive portions in the materials, structures, etc. of the respective components are omitted.

First, the sacrificial layer 107 is patterned on the auxiliary substrate 105 as shown in FIG. 7A. The sacrifice layer 107 may be patterned at a position corresponding to the non-display area NDA and the non-emission area NDA of the display panel. For example, the sacrificial layer 107 may be amorphous silicon. When laser is irradiated to the sacrifice layer 107 in the process of separating the auxiliary substrate 105 and the base film 110, amorphous silicon may be crystallized. Accordingly, the base film 110 and the auxiliary substrate 105 can be separated from each other without surface damage of the base film 110. An inorganic film may be additionally provided between the auxiliary substrate 105 and the sacrificial layer 107 to improve adhesion between the auxiliary substrate 105 and the sacrificial layer 107. For example, the inorganic film may be SiNx (silicon nitride), but is not limited thereto. (S101 in Fig. 6)

Second, a base film 110 is formed on the auxiliary substrate 105 to cover the sacrificial layer 107 as shown in FIG. 7B. For example, the base film 110 may be formed by a slit coating method. In the slit coating method, the liquid material used as the base film 110 is uniformly coated on the auxiliary substrate 105 using a nozzle and then cured to form a flexible film of the thin film. However, the present invention is not limited thereto, and the base film 110 may be formed by a roll coating method or a spin coating method. (S102 in Fig. 6)

Third, thin film transistors T and pads 160 are formed on the first surface 110a of the base film 110 as shown in FIG. 7C. In this case, the thin film transistors T are arranged in the non-emission area NEA of the display panel, and the pads 160 are arranged in the non-display area NDA. First, a buffer layer 130, an active layer (ACT), and a gate insulating film G1 are sequentially formed on the base film 110. Next, the gate electrode GE is formed so as to overlap with the active layer ACT on the gate insulating film GI arranged in the display area DA. Next, an interlayer insulating film (ILD) is formed on the gate electrode GE. Finally, a source electrode SE and a drain electrode DE connected to the active layer ACT through the first and second contact holes CNT1 and CNT2 are formed on the interlayer insulating film ILD, Thereby forming the pads 160 in the region NDA. In this case, the source electrode SE and the drain electrode DE and the pads 160 are simultaneously formed through the same process, and they may be the same material. (S103 in Fig. 6)

Fourth, organic light emitting devices OLED connected to the thin film transistors T are formed as shown in FIG. 7D, and an encapsulation layer 180 covering the organic light emitting devices OLED is formed. A passivation layer (PAS) and a planarization layer (PAC) are sequentially formed on the thin film transistors (T). The node electrode AND is formed on the thin film transistor T and is connected to the drain electrode DE through the third contact hole CNT3 provided in the passivation layer PAS and the planarization layer PAC. A bank B is formed between the adjacent anode electrodes (AND). The organic layer EL is formed on the anode electrode AND. The cathode electrode (CAT) is formed on the organic layer (EL) and the bank (B). The sealing layer 180 is formed so as to cover the thin film transistor T and the organic light emitting element OLED. A front adhesion layer 190 may be additionally formed on the sealing layer 180. Then, the flexible film 330, which is electrically connected to the circuit board 350 on the pads 160 of the non-display area NDA and is mounted with the source drive IC 310, is attached.

Fifthly, the base film 110 is separated from the auxiliary substrate 115 and Fig. 7E. The auxiliary substrate 115 and the base film 110 may be separated from each other by using a laser. In this case, the sacrificial layer 107 is irradiated with laser to separate the base film 110 and the auxiliary substrate 105 from each other without surface damage of the base film 110. The engraved patterns 112 are formed on the second surface 110b which is opposite to the first surface 110a of the base film 110 by separating the auxiliary substrate 105 and the base film 110 from each other. (S104 in Fig. 6)

Finally, the protective film 120 is attached to the second surface 110b of the base film 110 by using the adhesive member 125 as shown in FIG. 7F. In this case, the adhesive member 125 is filled between the engraved patterns 112 and the protective film 120 to bond the base film 110 and the protective film 120.

The flexible display panel 100 sequentially forms the base film 110, the thin film transistor T and the organic light emitting diode OLED on the auxiliary substrate 105, Can be manufactured by separating the base film 110 and the auxiliary substrate. In this case, a sacrifice layer 107 is patterned between the auxiliary substrate 105 and the base film 110. When the sacrificial layer 107 is provided between the auxiliary substrate 105 and the base film 110, the damage of the base film 110 by the laser release process can be reduced. The sacrifice layer 107 is patterned at a position corresponding to the non-display area NDA. When the base film 110 and the auxiliary substrate 105 are separated from each other, the sacrificial layer 107 is crystallized and the base film 110 is separated from the auxiliary substrate 105. As the sacrificial layer 107 and the auxiliary substrate 105 are separated from each other, the engraved patterns 112 may be formed on the second surface 110b of the base film 110. [

Since the engraved patterns 112 provided on the second surface 110b of the base film 110 are disposed so as to correspond to the non-display area NDA, the embodiment of the present invention can separate the base film 110 from the auxiliary substrate It is possible to prevent the surface of the base film 110 from being damaged.

Since the engraved patterns 112 provided on the second surface 110b of the base film 110 are disposed so as to correspond to the non-emissive region NEA, the embodiment of the present invention can separate the base film 110 from the auxiliary substrate 110 It is possible to prevent the damage of the thin film transistor T due to the laser generated in the process. Since the intaglio patterns 112 are not provided in the light emitting regions RE and GE, it is possible to prevent deterioration of optical characteristics such as transmittance and color coordinates of the light emitting regions RE and GE due to the remaining sacrificial layer material .

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents. Will be clear to those who have knowledge of. Therefore, the scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be interpreted as being included in the scope of the present invention.

100: Flexible display panel
105: auxiliary substrate 107: sacrificial layer
111: first base film 113: second base film
130: buffer layer 180: sealing layer
190: front adhesive layer 200: gate driver
310: Source drive IC 330: Flexible film
350: circuit board 400: timing control unit
T: Thin film transistor OLED: Organic light emitting element
DA: display area NDA: non-display area
RE, GE: light emitting region NEA: non-light emitting region

Claims (11)

A base film;
A display region including thin film transistors disposed on a first side of the base film; And
And a non-display area including pads disposed on at least one side of the display area,
And an engraved pattern is provided on a second surface of the base film that is opposite to the first surface. The method according to claim 1,
And the engraved pattern is disposed at a position corresponding to the non-display area. The method according to claim 1,
Wherein the thickness of the base film in the non-display area is thinner than the thickness of the base film in the display area. The method according to claim 1,
Wherein the display region is divided into a light emitting region including organic light emitting elements disposed on the thin film transistors and a non-emitting region including banks for partitioning the light emitting region,
And the engraved pattern is disposed at a position corresponding to the non-emission area. 5. The method of claim 4,
Wherein the thickness of the base film in the non-emission region is thinner than the thickness of the base film in the emission region. The method according to claim 4 or 5,
Wherein the thin film transistor is disposed in the non-emission region. The method according to claim 1,
A protective film disposed on a second side of the base film; And
And a bonding member for bonding the base film and the protective film. 5. The method of claim 4,
A sealing layer provided on the organic light emitting elements and the banks; And
And an upper film provided on the sealing layer. Patterning a sacrificial layer on the auxiliary substrate;
Forming a base film to cover the sacrificial layer on the auxiliary substrate;
Forming thin film transistors and pads on a first side of the base film; And
And separating the auxiliary substrate from the base film using a laser to form an engraved pattern on a second surface opposite to the first surface of the base film. 10. The method of claim 9,
Forming organic light emitting elements connected to the thin film transistor; And
And forming an encapsulation layer on the organic light emitting devices. 10. The method of claim 9,
And attaching a protective film to the second surface of the base film using an adhesive member.

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