KR20170076184A - Array Substrate For Display Device And Method Of Fabricating The Same - Google Patents
Array Substrate For Display Device And Method Of Fabricating The Same Download PDFInfo
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- KR20170076184A KR20170076184A KR1020150186140A KR20150186140A KR20170076184A KR 20170076184 A KR20170076184 A KR 20170076184A KR 1020150186140 A KR1020150186140 A KR 1020150186140A KR 20150186140 A KR20150186140 A KR 20150186140A KR 20170076184 A KR20170076184 A KR 20170076184A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- H01L27/323—
-
- H01L27/3248—
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Human Computer Interaction (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
A thin film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode disposed on the light shielding layer and having a thickness different from that of the light shielding layer and the data wiring, Wherein a light shielding layer of the first metal layer and a portion of the data wiring and a remaining portion of the data wiring of the first and second metal layers are simultaneously formed by using a transflective mask to reduce the number of exposure masks Manufacturing cost and manufacturing time are reduced, cutting of the active layer by the step is prevented, and resistance of the data wiring is reduced.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device, and more particularly, to an array substrate for a display device including a data line and a light-shielding layer having different thicknesses, and a manufacturing method thereof.
In view of the information age, the display field has also been rapidly developed. As a flat panel display device (FPD) having the advantages of thinning, light weight, and low power consumption in response to the information age, ), A plasma display panel device (PDP), an organic light emitting diode (OLED) display device, and a field emission display device (FED) cathode ray tube (CRT).
Recently, a touch display device (or a touch screen) having a touch panel mounted on a display panel has been spotlighted.
The touch display device is used as an output means for displaying an image and is used as an input means for inputting a user's command by touching a specific portion of the displayed image. The touch panel is operated in accordance with a position information detection method, Method, an infrared method, and an ultrasonic method.
That is, when the user touches the touch panel while viewing the image displayed on the display panel, the touch panel can detect the position information of the corresponding part and compare the detected position information with the position information of the image to recognize the user's command.
In recent years, in order to make a portable terminal such as a smart phone, a tablet PC, and the like slimmer, electrodes and wiring constituting the touch panel are connected to the substrate of the display panel (In-cell type) touch display device in which the touch panel is formed and integrated with the touch panel.
Such an insensitive-type touch display device will be described with reference to the drawings.
1 is a cross-sectional view of a conventional array substrate for an in-cell type touch display device.
1, the conventional array substrate for an in-cell type touch display device includes a
Specifically, a
An
A
A
The
A
A
A
A fourth
A
Here, the
The
A conventional in-cell type touch display device including such an array substrate can operate by dividing one frame into a display period and a touch period. During the display period, a common voltage is applied to the
In the conventional array substrate for an in-cell type touch display device, the
In order to prevent the
The thickness of the dielectric layer between the
Such a limitation has a problem in that the number of exposure masks used in the fabrication of the conventional array substrate for an in-cell type touch display device increases.
For example, in a conventional array substrate for an in-cell type touch display device, a first mask for the light-
SUMMARY OF THE INVENTION The present invention has been made in order to solve such a problem, and it is an object of the present invention to provide a method of manufacturing a semiconductor device, which comprises forming a data wiring and a light shielding layer simultaneously, and simultaneously forming a source electrode, a drain electrode, And an object of the present invention is to provide an array substrate for a touch display device and a method of manufacturing the same.
According to the present invention, the light-shielding layer of the first metal layer, the data wiring part and the remaining part of the data wiring of the first and second metal layers are simultaneously formed by using the transflective mask, whereby the number of exposure masks is reduced, Another object of the present invention is to provide an array substrate for a touch display device in which breakage of an active layer due to a stepped portion is prevented and resistance of a data line is reduced.
In order to solve the above problems, the present invention provides a light-emitting device comprising a substrate, a light-shielding layer and a data wiring disposed on the substrate and having different thicknesses from each other, and an active layer, a gate electrode, And a thin film transistor including a drain electrode.
The first portion of the data line overlapping the active layer has the first thickness, and the second portion of the data line spaced apart from the active layer has the first thickness and the second thickness, Lt; RTI ID = 0.0 > 1 < / RTI > thick.
The first portion of the data wiring is made of a single layer of the first metal material, and the second portion of the data wiring is formed of a single layer of the first metal material, A first metal layer of a metal material and a second metal layer of a second metal material.
The etch selectivity of the second metal material to the first metal material may be at least 10: 1.
The array substrate for a display includes a common wiring line spaced apart from the source electrode and the drain electrode, a planarization layer disposed over the thin film transistor and the common wiring line and having an opening corresponding to the drain electrode, A common electrode disposed on the planarization layer; a first protection layer disposed on the common electrode and including a first contact hole exposing the common wiring; and a second protection layer disposed on the first protection layer, And a pixel electrode connected to the drain electrode, the pixel electrode being disposed on the first passivation layer and connected to the common electrode.
The source electrode, the drain electrode, and the common wiring may be formed of the same layer and the same material, and the connection pattern and the pixel electrode may be formed of the same layer and the same material.
The first protection layer may further include a second contact hole exposing the common electrode and a third contact hole exposing the drain electrode, and the connection pattern may be connected to the common electrode through the second contact hole And the pixel electrode may be connected to the drain electrode through the third contact hole.
In addition, the source electrode and the drain electrode may be in side contact with both ends of the active layer, and the source electrode may be connected to the data line.
According to another aspect of the present invention, there is provided a method of manufacturing a thin film transistor, comprising: forming a light-shielding layer and a data line having different thicknesses on a substrate; forming a thin film transistor including an active layer, a gate electrode, a source electrode and a drain electrode on the light- The present invention also provides a method of manufacturing an array substrate for a display device.
The step of forming the light shielding layer and the data line may include sequentially forming first and second metal material layers having first and second thicknesses on the substrate, The second metal material layer is exposed on the second metal material layer in a region corresponding to the light shielding layer and the data wiring outside and a third thickness is formed in a region corresponding to the data wiring spaced apart from the active layer Forming a first photoresist pattern having a fourth thickness smaller than the third thickness in an area corresponding to the light shielding layer and the data line immediately below the active layer; Forming a light shielding layer pattern and a data wiring pattern by etching the second metal material layer and the first metal material layer using a mask as a mask, Shielding layer pattern and the data wiring pattern are exposed in an area corresponding to the data line spaced from the active layer, and in a region corresponding to the light-shielding layer and the data line immediately below the active layer, Forming a second photoresist pattern having a fifth thickness by etching the light shielding layer pattern and the data wiring pattern using the second photoresist pattern as an etching mask to form the light shielding layer and the data wiring Step < / RTI >
Also, the etch selectivity of the second layer of metal material to the first layer of metal material may be at least 10: 1.
The manufacturing method of the array substrate for a display device according to the present invention includes the steps of: forming a common wiring line spaced apart from the source electrode and the drain electrode; Forming a planarization layer having an opening corresponding to the drain electrode on the thin film transistor and the common wiring; forming a common electrode on the planarization layer; exposing the common wiring to an upper portion of the common electrode; Forming a first passivation layer including a first contact hole, a pixel electrode connected to the drain electrode on the first passivation layer, and a second electrode connected to the common electrode, To form a connection pattern that is connected to the first terminal.
According to the present invention, the data wiring and the light shielding layer are formed at the same time, and the source electrode, the drain electrode, and the common wiring are simultaneously formed of the same layer and the same material, thereby reducing the number of exposure masks and reducing manufacturing cost and manufacturing time.
According to the present invention, the light-shielding layer of the first metal layer, the data wiring part and the remaining part of the data wiring of the first and second metal layers are simultaneously formed by using the transflective mask, whereby the number of exposure masks is reduced, The cutoff of the active layer due to the stepped portion is prevented, and the resistance of the data line is reduced.
1 is a cross-sectional view of a conventional array substrate for an in-cell type touch display device.
2 is a sectional view of an array substrate for a self-capacitance type in-cell type touch display device according to a first embodiment of the present invention.
3 is a plan view of a self-capacitance type in-cell type touch display device according to a second embodiment of the present invention.
4 is a sectional view of an array substrate for a self-capacitance type in-cell type touch display device according to a second embodiment of the present invention.
5A to 5M are cross-sectional views for explaining a manufacturing method of an array substrate for a self-capacitance type in-cell type touch display device according to a second embodiment of the present invention.
Hereinafter, an array substrate for a display device and a method of manufacturing the same according to the present invention will be described with reference to the accompanying drawings, taking an in-cell type touch display device as an example.
2 is a cross-sectional view of an array substrate for an in-cell type touch display device of the self-capacitance type according to the first embodiment of the present invention.
2, an array substrate for a self-capacitance type in-cell type touch display device according to the first embodiment of the present invention includes a
A
The
The
The light-
An
The
A
A
At this time, the
The
Here, the
A
The
The
A
The
The
That is, the
The
Here, the
The
As described above, in the array substrate for an in-cell type touch display device of the self-capacitance type according to the first embodiment of the present invention, the light-
However, in the array substrate for an in-cell type touch display device of the self-capacitance type according to the first embodiment of the present invention, when the thin film transistor T includes the
Since the high-temperature heat treatment process proceeds after formation of the light-
Accordingly, the light-
In another embodiment, in order to prevent disconnection of the active layer, the light-shielding layer and the data wiring under the active layer are formed of a single layer of the first metal layer, and the data wiring spaced apart from the active layer is formed of the first and second metal layers It can be formed as a double layer, which will be described with reference to the drawings.
FIG. 3 is a plan view of a self-capacitance type in-cell type touch display device according to a second embodiment of the present invention, and FIG. 4 is a cross-
3, the self-capacitance type in-cell type touch display apparatus according to the second embodiment of the present invention includes a
The
Although not shown, the
The driving
The driving
4, an array substrate for an in-cell type touch display device of the self-capacitance type according to the second embodiment of the present invention includes a
A
The
The
The
That is, the light-
As described above, since the light-
The
The
An
The
In particular, since the light-
A
Here, the
The
A
Here, the
As described above, in the array substrate for an in-cell type touch display device of the self-capacitance type according to the second embodiment of the present invention, the
The
A manufacturing method of the array substrate according to the second embodiment will be described with reference to the drawings.
5A to 5M are cross-sectional views for explaining a manufacturing method of an array substrate for a self-capacitance type Insel-type touch display device according to a second embodiment of the present invention.
5A, a first
The first
At this time, the first mask includes a semi-transmissive region A including ultraviolet rays, a blocking region C blocking ultraviolet rays, and a semi-transmissive region B having a transmissivity with respect to ultraviolet rays larger than that of the transmissive region, And the transmissive mask may correspond to an area where the transmissive area A is not formed with the light shielding layer 222 (FIG. 4) and the data line (FIG. 4) 224, The
Then, the photoresist layer is exposed by irradiating ultraviolet rays through the semi-transparent mask, and the exposed photoresist layer is developed to form the
Accordingly, the
5B, the second
For example, the second
The
The
The
For example, the
The
As described above, after the first and second metal material layers 260 and 262 are continuously formed on the
Therefore, the step difference S between the light-
A
Since the light-
A
An interlayer insulating
As shown in FIG. 5I, a metal material layer (not shown) is formed on the
At this time, the
The
A first
In the second embodiment, the
As shown in FIG. 5K, a common electrode material layer (not shown) is formed on the
A second
As shown in FIG. 5M, a pixel electrode material layer (not shown) is formed on the
At this time, the
That is, the
The
The
As described above, in the array substrate for an in-cell type touch display device of the self-capacitance type according to the second embodiment of the present invention, the
The thickness of the insulating layer between the
The
In the first and second embodiments, the data wiring and the light shielding layer formed on the substrate having different thicknesses are applied to the array substrate for the in-cell type touch display device. However, The data wiring and the light shielding layer having a thin thickness and the portion not overlapped with the active layer overlapping with the layer can be applied to an array substrate for a liquid crystal display device or an array substrate for an organic light emitting diode display device, The cutting of the active layer after the crystallization process is prevented by the portion having a thin thickness of the data wiring and the light shielding layer and the wiring resistance is reduced by the portion having the thick thickness of the data wiring and the light shielding layer, Delay can be prevented.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It can be understood that
110: touch display panel 120: substrate
222: shielding layer 224: data wiring
T: thin film transistor 140: common wiring
144: planarization layer 146: common electrode
150: pixel electrode
Claims (12)
A light-shielding layer and a data line disposed on the substrate and having different thicknesses;
A thin film transistor arranged on the light shielding layer and including an active layer, a gate electrode, a source electrode and a drain electrode,
And a plurality of pixel electrodes.
Wherein the light-shielding layer has a first thickness,
Wherein a first portion of the data line overlapping the active layer has the first thickness and a second portion spaced apart from the active layer corresponds to a sum of the first thickness and a second thickness greater than the first thickness And a thickness of the first substrate.
Wherein the light-shielding layer comprises a single layer of a first metal material,
Wherein the first portion of the data line comprises a single layer of the first metal material and the second portion of the data line comprises a first metal layer of the first metal material and a second layer of a second metal layer of the second metal material, And a plurality of pixel electrodes.
Wherein the etch selectivity of the second metal material to the first metal material is at least 10: 1.
A common wiring line spaced apart from the source electrode and the drain electrode;
A planarization layer disposed on the thin film transistor and the common wiring and having an opening corresponding to the drain electrode;
A common electrode disposed on the planarization layer;
A first protection layer disposed on the common electrode and including a first contact hole exposing the common wiring;
A connection pattern disposed on the first protection layer and connected to the common electrode and connected to the common wiring through the first contact hole;
A pixel electrode disposed on the first passivation layer and connected to the drain electrode,
Further comprising: a substrate;
Wherein the source electrode, the drain electrode, and the common wiring are formed of the same layer and the same material,
Wherein the connection pattern and the pixel electrode are made of the same layer and the same material.
Wherein the first protective layer further includes a second contact hole exposing the common electrode and a third contact hole exposing the drain electrode,
The connection pattern is connected to the common electrode through the second contact hole,
And the pixel electrode is connected to the drain electrode through the third contact hole.
The source electrode and the drain electrode are in side contact with both ends of the active layer,
And the source electrode is connected to the data line.
Forming a thin film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode on the light shielding layer
And a step of forming an array substrate.
Wherein the step of forming the light-shielding layer and the data wiring comprises:
Sequentially forming first and second metallic material layers having first and second thicknesses on the substrate, respectively;
The second metal material layer is exposed on the second metal material layer using a transflective mask in a region corresponding to the light shielding layer and the data wiring outside, Forming a first photoresist pattern having a third thickness in the region and a fourth thickness smaller than the third thickness in a region corresponding to the light shielding layer and the data line immediately below the active layer;
Forming a light shielding layer pattern and a data wiring pattern by etching the second metal material layer and the first metal material layer using the first photoresist pattern as an etching mask;
The first photoresist pattern is ashed to expose the light shielding layer pattern and the data wiring pattern in a region corresponding to the data wiring spaced apart from the active layer, and the light shielding layer and the data wiring Forming a second photoresist pattern having a fifth thickness in a region corresponding to the first photoresist pattern;
Forming the light shielding layer and the data wiring by etching the light shielding layer pattern and the data wiring pattern using the second photoresist pattern as an etching mask
And a step of forming an array substrate.
Wherein the etch selectivity of the second metal material layer to the first metal material layer is at least 10: 1.
Forming a common wiring line spaced apart from the source electrode and the drain electrode;
Forming a planarization layer having an opening corresponding to the drain electrode on the thin film transistor and the common wiring;
Forming a common electrode on the planarization layer;
Forming a first protective layer on the common electrode, the first protective layer including a first contact hole exposing the common wiring;
A pixel electrode connected to the drain electrode on the first passivation layer and a connection pattern connected to the common electrode and connected to the common line through the first contact hole,
And forming a plurality of pixel electrodes on the array substrate.
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190063907A (en) * | 2017-11-30 | 2019-06-10 | 엘지디스플레이 주식회사 | Electroluminescent Display Device |
CN110391343A (en) * | 2018-04-19 | 2019-10-29 | 乐金显示有限公司 | El display device and its manufacturing method |
CN110444564A (en) * | 2018-05-04 | 2019-11-12 | 三星显示有限公司 | Display device and its manufacturing method |
KR20200072615A (en) * | 2018-12-12 | 2020-06-23 | 삼성디스플레이 주식회사 | Display apparatus and method of manufacturing the same |
US11164896B2 (en) * | 2018-04-28 | 2021-11-02 | Wuhan China Star Optoelectronics Technology Co., Ltd | Array substrate and display panel |
US20220140032A1 (en) * | 2020-11-04 | 2022-05-05 | Samsung Display Co., Ltd. | Display device |
-
2015
- 2015-12-24 KR KR1020150186140A patent/KR20170076184A/en unknown
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190063907A (en) * | 2017-11-30 | 2019-06-10 | 엘지디스플레이 주식회사 | Electroluminescent Display Device |
CN110391343A (en) * | 2018-04-19 | 2019-10-29 | 乐金显示有限公司 | El display device and its manufacturing method |
KR20190122073A (en) * | 2018-04-19 | 2019-10-29 | 엘지디스플레이 주식회사 | Electro-Luminescent Display Device and method of fabricating the same |
US11205685B2 (en) | 2018-04-19 | 2021-12-21 | Lg Display Co., Ltd. | Electro-luminescent display device and method of fabricating the same |
US11164896B2 (en) * | 2018-04-28 | 2021-11-02 | Wuhan China Star Optoelectronics Technology Co., Ltd | Array substrate and display panel |
CN110444564A (en) * | 2018-05-04 | 2019-11-12 | 三星显示有限公司 | Display device and its manufacturing method |
US10916617B2 (en) | 2018-05-04 | 2021-02-09 | Samsung Display Co., Ltd. | Display device |
KR20200072615A (en) * | 2018-12-12 | 2020-06-23 | 삼성디스플레이 주식회사 | Display apparatus and method of manufacturing the same |
US20220140032A1 (en) * | 2020-11-04 | 2022-05-05 | Samsung Display Co., Ltd. | Display device |
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