KR20170074466A - Slurry composition for poly silicon film polishing - Google Patents

Abstract

The present invention relates to a slurry composition for polishing a polysilicon film, wherein a slurry composition for polishing a polysilicon film according to an embodiment of the present invention comprises a quaternary ammonium base compound; Amine compounds; Organic acids; And abrasive grains, wherein at least one characteristic selected from the group consisting of abrasive grain size, composition pH and composition electric conductivity is stably maintained until after 24 hours.

Description

TECHNICAL FIELD [0001] The present invention relates to a slurry composition for polishing a polysilicon film,

The present invention relates to a slurry composition for polishing a polysilicon film, and more particularly, to a slurry composition for polishing a polysilicon film that is excellent in dispersion stability, pH stability, and electrical conductivity stability.

As the semiconductor devices are diversified and highly integrated, a finer pattern forming technique is used, thereby complicating the surface structure of the semiconductor device and increasing the step difference of the surface films. A chemical mechanical polishing (CMP) process is used as a planarization technique for removing a step in a specific film formed on a substrate in manufacturing a semiconductor device. The abrasive grains used in such a planarization technique are generally obtained by dispersing various kinds of abrasive grains in a dispersion medium such as water in accordance with the kind of the substrate to be polished and the processing speed required in the planarization technique. These abrasive grains have poor dispersion stability in the dispersion medium depending on the kind and size thereof. For example, in the case of cerium oxide particles, they have a relatively large specific gravity. Therefore, cerium oxide particles are dispersed in a dispersion medium to prepare a polishing slurry When cerium oxide particles are dispersed uniformly for a while after the production, cerium oxide particles start to disperse in a relatively short period of time and precipitate, causing agglomeration of the particles to increase their particle diameters and to enlarge the particle size distribution. , The processing speed changes with time, and the surface of the substrate is damaged. Therefore, there is a demand for a polishing slurry composition that does not damage the surface to be polished, has excellent dispersion stability, and does not cause two-layer separation, aggregation, sedimentation, and viscosity change.

Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a slurry composition for polishing a polysilicon film which is excellent in dispersion stability, pH stability and electrical conductivity stability and is easy to store and store.

However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to one embodiment of the present invention, a quaternary ammonium base compound; Amine compounds; Organic acids; And at least one characteristic selected from the group consisting of abrasive grain size, composition pH, and composition electric conductivity is stably maintained until after 24 hours, wherein the slurry composition for polishing a polysilicon film to provide.

The abrasive grains may have a size change ratio of the abrasive grains of not more than 5% at 60 캜 according to the following formula:

[expression]

Change ratio (%) = [(abrasive particle size after 24 hours - initial abrasive grain size) / initial abrasive grain size] x 100

The slurry composition for polishing a polysilicon film may have a pH change of less than or equal to 0.5 at room temperature.

The slurry composition for polishing a polysilicon film may have a change in electric conductivity at room temperature of not more than 200 mu s / cm.

The quaternary ammonium base compound may include quaternary amines, choline, salts thereof, or derivatives thereof.

The quaternary amine, a salt thereof or a derivative thereof may be at least one selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetraisopropylammonium hydroxide, tetracyclopropylammonium hydroxide, tetra Tetrabutylammonium hydroxide, butylammonium hydroxide, tetraisobutylammonium hydroxide, tetrapentylammonium hydroxide, tetracyclopentylammonium hydroxide, tetrahexylammonium hydroxide, tetracyclohexylammonium hydroxide, tetramethylammonium chloride, tetra Butyl ammonium chloride, trimethyl benzyl ammonium chloride, triethyl benzyl ammonium chloride, tributyl benzyl ammonium chloride, trioctyl methyl ammonium chloride, trimethyldodecyl ammonium chloride, N-lauryl pyridinium chloride, dimethyl pyrrolidinium At least one selected from the group consisting of boron trichloride, tridecyl ammonium bromide, tetraethyl ammonium bromide, tetra-n-butyl ammonium bromide, and dimethylpyrrolidinium bromide .

The choline, its salt or a derivative thereof may be selected from the group consisting of choline hydroxide, choline fluoride, choline chloride, choline base, choline bromide, Choline iodide, choline dihydrogen citrate, choline bitartrate, choline bicarbonate, choline citrate, choline ascorbate, Choline borate, choline theophyllinate, choline gluconate, acetylcholine chloride, acetylcholine bromide, and methacholine chloride. And at least one selected from the group consisting of

The amine compound may be at least one selected from the group consisting of propylamine, dibutylamine, tributylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, butylamine, ethanolamine, isopropylamine, diethanolamine, Propylene (AMP), 2,2-dimethyl-1,3-diaminopropane, hexamethylene diamine, 3-methylaminopropylamine, 3 Dimethylamino propylamine, 4-dimethylaminobutylamine, 2-diethylamino-2-methyl-1-propanol, 1-amino- Amino-2-propanol, 3-dimethylamino-1-propanol, 2-dimethylamino-1-ethanol, 2- ethylamino- N-propyldiethanolamine, N-isopropyldiethanolamine, N- (2-methylpropyl) diethanolamine, N-butyldiethane Amine, N-butyl ethanolamine, N-cyclohexyl diethanolamine, 2- (dimethylamino) ethanol, 2-diethylaminoethanol, 2-dipropylaminoethanol, 2-methyl-1-propanol, 2- [bis (2-hydroxyethyl) Amino-2-methyl-1-propanol, tris (hydroxymethyl) aminomethane, triisopropanolamine and 5- Dimethylaminopentylamine, and dimethylaminopentylamine.

The quaternary ammonium base compound and the amine compound may each be 0.01 wt% to 5 wt% of the slurry composition for polishing the polysilicon film.

The organic acid is at least one selected from the group consisting of citric acid, acetic acid, adipic acid, lactic acid, phthalic acid, gluconic acid, glycolic acid, propionic acid, oxalic acid, succinic acid, malonic acid, malic acid, tartaric acid, maleic acid, picolinic acid, nicotinic acid, isonicotinic acid, But are not limited to, adipic acid, adipic acid, adipic acid, fumaric acid, isophthalic acid, terephthalic acid, itaconic acid, mandelic acid, phenylacetic acid, 1-naphthoic acid , 2-naphthoic acid, 1,2,3,4-butanetetracarboxylic acid and glutamic acid.

The organic acid may be 0.01 wt% to 5 wt% of the slurry composition for polishing the polysilicon film.

Wherein the abrasive particles comprise at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic substance or an inorganic substance, and the metal oxide in a colloidal state, and the metal oxide is at least one selected from the group consisting of silica, ceria, zirconia, alumina, At least one selected from the group consisting of titania, barium titania, germania, manganese, and magnesia.

And the average particle size of the abrasive grains is 10 nm to 300 nm.

The abrasive grains may be 0.1 wt% to 10 wt% of the slurry composition for polishing the polysilicon film.

The pH of the slurry composition for polishing the polysilicon film may be 9 to 12.

The slurry composition for polishing a polysilicon film may have a polishing selectivity of 10 to 500 for a polysilicon film to an oxide film.

The slurry composition for polishing a polysilicon film according to an embodiment of the present invention is characterized in that the characteristics of the abrasive grain size, the composition pH and the composition electric conductivity are stably maintained and the dispersion stability, the pH stability and the electric conductivity stability And is easy to store and store. Further, by including the quaternary ammonium base compound and the amine compound, a high polishing rate of the polysilicon film in the alkali region and an excellent polishing selectivity of the polysilicon film to the oxide film can be realized.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. In addition, terms used in this specification are terms used to appropriately express the preferred embodiments of the present invention, which may vary depending on the user, the intention of the operator, or the practice of the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification. Like reference symbols in the drawings denote like elements.

Throughout the specification, when an element is referred to as "comprising ", it means that it can include other elements as well, without excluding other elements unless specifically stated otherwise.

Hereinafter, the slurry composition for polishing a polysilicon film of the present invention will be described in detail with reference to examples and drawings. However, the present invention is not limited to these embodiments and drawings.

According to one embodiment of the present invention, a quaternary ammonium base compound; Amine compounds; Organic acids; And at least one characteristic selected from the group consisting of abrasive grain size, composition pH, and composition electric conductivity is stably maintained until after 24 hours, wherein the slurry composition for polishing a polysilicon film to provide.

The slurry composition for polishing a polysilicon film according to an embodiment of the present invention is characterized in that the characteristics of the abrasive grain size, the composition pH and the composition electric conductivity are stably maintained and the dispersion stability, the pH stability and the electric conductivity stability And is easy to store and store. Further, by including the quaternary ammonium base compound and the amine compound, a high polishing rate of the polysilicon film in the alkali region and an excellent polishing selectivity of the polysilicon film to the oxide film can be realized.

The abrasive grains may have a size change ratio of the abrasive grains of not more than 5% at 60 캜 according to the following formula:

[expression]

Change ratio (%) = [(abrasive particle size after 24 hours - initial abrasive grain size) / initial abrasive grain size] x 100

When the rate of change of the size of the abrasive grains is more than 5%, the abrasive grains are not uniformly dispersed in the slurry composition for polishing the polysilicon film, and the grains may precipitate and agglomerate. As the agglomeration of the abrasive grains increases, the grain size of the abrasive grains increases and the particle size distribution becomes wider. The process of breaking the polycrystals into single crystals and the process of breaking the agglomerated secondary particles into smaller secondary or primary particles Many micro scratches can occur.

The slurry composition for polishing a polysilicon film may have a pH change of less than or equal to 0.5 at room temperature. If the pH change of the slurry composition for polishing the polysilicon film exceeds 0.5, the agglomeration of the abrasive grains of the slurry composition for polishing the polysilicon film or the dissociation of the grains into the composition results in an increase in the secondary particle size, The suppressing effect is lowered, and the polishing ability may not be sufficiently exhibited.

The slurry composition for polishing a polysilicon film may have a change in electric conductivity at room temperature of not more than 200 mu s / cm. When the electrical conductivity change of the slurry composition for polishing a polysilicon film is more than 200 mu s / cm, the particles of the slurry composition for polishing the polysilicon film may agglomerate and the polishing ability may not be sufficiently exhibited.

In the present invention, the quaternary ammonium base compound and the amine compound can serve as a pH adjusting agent, and when the quaternary ammonium base compound and the amine compound are included, a high polishing rate of the polysilicon film can be realized.

The quaternary ammonium base compound may include, for example, a quaternary amine, choline, a salt thereof, or a derivative thereof.

The quaternary amine, a salt thereof or a derivative thereof may be, for example, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetraisopropylammonium hydroxide, tetracyclopropylammonium hydroxide For example, sodium hydroxide, potassium hydroxide, sodium hydroxide, sodium hydroxide, potassium hydroxide, sodium hydroxide, potassium hydroxide, sodium hydroxide, potassium hydroxide, Ammonium chloride, tetrabutylammonium chloride, trimethylbenzylammonium chloride, triethylbenzylammonium chloride, tributylbenzylammonium chloride, trioctylmethylammonium chloride, trimethyldodecylammonium chloride, N-laurylpyridinium chloride, dimethyl At least one selected from the group consisting of ruthenium chloride, trimethylammonium bromide, trimethylammonium bromide, tetraethylammonium bromide, tetra-n-butylammonium bromide, and dimethylpyrrolidinium bromide Lt; / RTI >

The choline, its salt or a derivative thereof may be, for example, selected from the group consisting of choline hydroxide, choline fluoride, choline chloride, choline base, choline bromide ), Choline iodide, choline dihydrogen citrate, choline bitartrate, choline bicarbonate, choline citrate, choline ascorbic acid, Choline chloride, choline ascorbate, choline borate, choline theophyllinate, choline gluconate, acetylcholine chloride, acetylcholine bromide, and methacholine chloride methacholine chloride, and the like.

The amine compound may be, for example, a primary amine such as propylamine, dibutylamine, tributylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, butylamine, ethanolamine, isopropyl Amine, diethanolamine, triethanolamine, dipropylamine, preethylenetetramine, 2-amino-2-methyl-1-propanol (AMP), 2,2- , 3-methylaminopropylamine, 3- (dimethylamino) propylamine, 3- (diethylamino) propylamine, 4-dimethylaminobutylamine, 2- Amino-2-propanol, 1-dimethylamino-2-propanol, 3-dimethylamino-1-propanol, 2- Propanol, N-methyldiethanolamine, N-propyldiethanolamine, N-isopropyldiethanolamine, N- (2-methylpropyl) di N-cyclohexyldiethanolamine, N-cyclohexyldiethanolamine, 2- (dimethylamino) ethanol, 2-diethylaminoethanol, 2-dipropylaminoethanol, 2-butylamino Amino-2-pentanol, 2- [bis (2-hydroxyethyl) amino] -2-methyl-1-propanol, 2-t-butylaminoethanol, 2- Amino-2-methyl-1-propanol, tris (hydroxymethyl) amino] -2-propanol, Methane, tri-isopropanolamine, and 5-dimethylaminopentylamine.

The quaternary ammonium base compound and the amine compound may be added in an amount to adjust the pH of the slurry composition for polishing a polysilicon film of the present invention, and the pH of the slurry composition for polishing the polysilicon film is preferably from 9 to 12, Area. In the case of the slurry composition for polishing a polysilicon film of the prior art, there was a problem in stability due to a change in physical properties with a decrease in pH over time with time. However, in the case of the slurry composition for polishing a polysilicon film of the present invention, There is little change in pH over time. In order to ensure such pH stability, the quaternary ammonium base compound and the amine compound are preferably added in an amount of 0.01 wt% to 5 wt%, respectively, in the slurry composition for polishing the polysilicon film. If the quaternary ammonium base compound and amine compound are less than 0.01% by weight in the slurry composition for polishing the polysilicon film, desired abrasive grains are agglomerated to cause problems in dispersion stability and pH stability, and in the case of more than 5% The surface defects of the polished film can be increased.

The organic acid is at least one selected from the group consisting of citric acid, acetic acid, adipic acid, lactic acid, phthalic acid, gluconic acid, glycolic acid, propionic acid, oxalic acid, succinic acid, malonic acid, malic acid, tartaric acid, maleic acid, picolinic acid, nicotinic acid, isonicotinic acid, But are not limited to, adipic acid, adipic acid, adipic acid, fumaric acid, isophthalic acid, terephthalic acid, itaconic acid, mandelic acid, phenylacetic acid, 1-naphthoic acid , 2-naphthoic acid, 1,2,3,4-butanetetracarboxylic acid and glutamic acid.

The organic acid may be 0.01 wt% to 5 wt% of the slurry composition for polishing the polysilicon film. If the organic acid is less than 0.01% by weight in the slurry composition for polishing the polysilicon film, it may exhibit low polishing characteristics for the polysilicon film, and if it exceeds 5% by weight, surface defects may be increased.

Wherein the abrasive particles comprise at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic substance or an inorganic substance, and the metal oxide in a colloidal state, and the metal oxide is at least one selected from the group consisting of silica, ceria, zirconia, alumina, At least one selected from the group consisting of titania, barium titania, germania, manganese, and magnesia. Preferably, a metal oxide in a colloidal state can be used.

The abrasive grains may be 0.1 wt% to 10 wt% of the slurry composition for polishing the polysilicon film. When the abrasive grains are less than 0.1 wt% in the slurry composition for polishing the polysilicon film, the polishing rate of the polysilicon film is decreased. When the abrasive grains are more than 10 wt%, scratches are likely to occur in the polysilicon film due to abrasive grains.

And the average particle size of the abrasive grains is 10 nm to 300 nm. If the abrasive grains are less than 10 nm, there is a problem that the polishing rate is lowered and there is a problem that the selection ratio is difficult to implement. When the abrasive grains are more than 300 nm, it is difficult to control the surface defects, the polishing rate and the selection ratio.

The abrasive grains may include those prepared by the liquid phase method. The liquid phase method includes a sol-gel method in which an abrasive particle precursor is caused to undergo a chemical reaction in an aqueous solution and crystals are grown to obtain fine particles, a coprecipitation method in which abrasive particle ions are precipitated in an aqueous solution, A hydrothermal synthesis method such as a hydrothermal synthesis method.

The slurry composition for polishing a polysilicon film may have a polishing selectivity of 10 to 500 for a polysilicon film to an oxide film. The polishing rate of the polysilicon film to the oxide film is high and the semiconductor substrate can be uniformly polished.

The polysilicon film polishing slurry composition may have a polysilicon film polishing rate of 1,000 A / min to 5,000 A / min, and an oxide film polishing rate of 10 A / min to 100 A / min.

In addition, the slurry composition for polishing a polysilicon film may include water or a water solvent containing the water as a medium for dissolving or dispersing the respective components described above.

The slurry composition for polishing a polysilicon film of the present invention is excellent in dispersion stability and good in redispersibility and does not cause separation of two layers, aggregation, sedimentation and viscosity change, and is easy to store and store. Particularly, Scratches and residual particles that can cause fatal defects can be reduced.

Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the following examples are for illustrative purposes only and are not intended to limit the scope of the present invention.

[Example 1]

2% by weight of citric acid was added to ultrapure water and mixed at a high speed. 1% by weight of tetramethylammonium hydroxide (TMAH) was added as a quaternary ammonium base compound, and 2-amino- Propanol (AMP-95) was added thereto to adjust the pH to 10, and 5 wt% of colloidal silica was added thereto at a high speed to prepare a slurry composition having a particle size of 60 nm.

[Example 2]

0.2% by weight of citric acid was added to ultrapure water and mixed at a high speed. 0.1% by weight of tetramethylammonium hydroxide (TMAH) was added as a quaternary ammonium base compound, AMP-95 was added as a primary amine, Then, 0.5 wt% of colloidal silica was added and mixed at a high speed to prepare a slurry composition having a particle size of 60 nm.

[Example 3]

A slurry composition was prepared in the same manner as in Example 2 except that AMP-95 was added so that the pH was 10.5.

[Example 4]

The slurry composition was prepared in the same manner as in Example 2, except that AMP-95 was added so as to have a pH of 11.

[Example 5]

A slurry composition was prepared in the same manner as in Example 2, except that 0.08% by weight of tetramethylammonium hydroxide (TMAH) was added as quaternary ammonium base compound and AMP-95 was added to adjust the pH to 10.5.

[Example 6]

A slurry composition was prepared in the same manner as in Example 2, except that 0.05 wt% tetramethylammonium hydroxide (TMAH) was added as quaternary ammonium base compound and AMP-95 was added to adjust the pH to 10.5.

[Example 7]

A slurry composition was prepared in the same manner as in Example 2, except that 0.1 wt% of choline hydroxide was added instead of tetramethylammonium hydroxide (TMAH) as the quaternary ammonium base compound and AMP-95 was added so that the pH was 10 Respectively.

[Example 8]

A slurry composition was prepared in the same manner as in Example 2, except that 0.1 wt% of choline hydroxide was added instead of tetramethylammonium hydroxide (TMAH) as a quaternary ammonium base compound and AMP-95 was added to adjust the pH to 10.5 Respectively.

[Comparative Example 1]

0.2% by weight of citric acid was added to ultrapure water and mixed at high speed. Potassium hydroxide (KOH) was added as a primary amine without adding tetramethylammonium hydroxide (TMAH) as a quaternary ammonium base compound to adjust the pH to 10.5 After appropriately, 5 wt% of colloidal silica was added and mixed at a high speed to prepare a slurry composition having a particle size of 60 nm.

[Comparative Example 2]

Ammonia (NH ₄ OH) was added to 0.18 wt% tetramethylammonium hydroxide (TMAH) as a quaternary ammonium base compound and the pH was adjusted to 10.8 instead of potassium hydroxide (KOH) as a primary amine, and colloidal silica 0.5 A slurry composition was prepared in the same manner as in Comparative Example 1 except that the weight% was added.

[Comparative Example 3]

A slurry composition was prepared in the same manner as in Comparative Example 2, except that ammonia (NH ₄ OH) was added to adjust the pH to 10.5.

[Comparative Example 4]

A slurry composition was prepared in the same manner as in Comparative Example 2, except that ammonia (NH ₄ OH) was added to adjust the pH to 10.2.

[Comparative Example 5]

A slurry composition was prepared in the same manner as in Comparative Example 2, except that potassium hydroxide (KOH) was added so as to have a pH of 10.

[Comparative Example 6]

A slurry composition was prepared in the same manner as in Comparative Example 2, except that potassium hydroxide (KOH) was added so as to have a pH of 10.5.

[Comparative Example 7]

A slurry composition was prepared in the same manner as in Comparative Example 2, except that potassium hydroxide (KOH) was added so as to have a pH of 11.

The following Table 1 shows the contents of the slurry compositions of Examples 1 to 8 and Comparative Examples 1 to 7 of the present invention.

Silica
(weight%) Citric acid
(weight%) Quaternary ammonium
compound
(weight%) Primary amine
(weight%) Example 1 5.0 2.0 TMAH 1.0 AMP Example 2 0.5 0.2 TMAH 0.1 AMP Example 3 0.5 0.2 TMAH 0.1 AMP Example 4 0.5 0.2 TMAH 0.1 AMP Example 5 0.5 0.2 TMAH 0.08 AMP Example 6 0.5 0.2 TMAH 0.05 AMP Example 7 0.5 0.2 Choline 0.1 AMP Example 8 0.5 0.2 Choline 0.1 AMP Comparative Example 1 5.0 0.2 - KOH Comparative Example 2 0.5 0.2 TMAH 0.1 NH ₄ OH Comparative Example 3 0.5 0.2 TMAH 0.1 NH ₄ OH Comparative Example 4 0.5 0.2 TMAH 0.1 NH ₄ OH Comparative Example 5 0.5 0.2 TMAH 0.1 KOH Comparative Example 6 0.5 0.2 TMAH 0.1 KOH Comparative Example 7 0.5 0.2 TMAH 0.1 KOH

[Assessment Methods]

35 ml of each of the slurry compositions of Examples 1 to 8 and Comparative Examples 1 to 7 of the present invention was placed in a 40 ml vial and placed in a 60 占 폚 bath. After 24 hours, the pH and the abrasive grain size variation of the slurry composition were measured Respectively. The abrasive grains were prepared by diluting 2 ml of the slurry composition in beaker with 100 ml of ultrapure water to measure the abrasive grain size.

Table 2 shows the pH, abrasive particle size, pH of the slurry composition and abrasive particle size of the initial slurry composition of the slurry compositions of Examples 1 to 8 and Comparative Examples 1 to 7 of the present invention.

Early After 24 hours pH
stability Dispersion
stability pH Particle size
(nm) conductivity
(/ / Cm) pH Particle size
(nm) conductivity
(/ / Cm) Example 1 10.0 57.2 14580 9.9 58.2 14640 ○ ○ Example 2 10.0 56.9 2462 9.9 57.1 2472 ○ ○ Example 3 10.5 55.6 2573 10.6 56.2 2588 ○ ○ Example 4 11.0 58.7 2621 11.0 59.1 2630 ○ ○ Example 5 10.5 59.2 2315 10.4 59.3 2331 ○ ○ Example 6 10.5 57.8 2285 10.4 59.2 2305 ○ ○ Example 7 10.0 56.7 2396 10.1 59.7 2400 ○ ○ Example 8 10.5 58.1 2468 10.5 58.2 2487 ○ ○ Comparative Example 1 10.5 56.9 2965 9.6 132.4 3215 × × Comparative Example 2 10.8 57.6 2835 Flocculation × × Comparative Example 3 10.5 57.9 2784 Flocculation × × Comparative Example 4 10.2 56.5 2723 Flocculation × × Comparative Example 5 10.0 56.9 3012 9.6 57.9 3225 × ○ Comparative Example 6 10.5 57.6 3107 10.1 58.4 3334 × ○ Comparative Example 7 11.0 56.9 3211 10.4 57.7 3500 × ○

It can be seen that the polishing slurry compositions of Examples 1 to 8 of the present invention have a slight change in pH and a small change in abrasive grain size and electric conductivity. It can be seen that the slurry composition of Comparative Example 1 has a large pH change and a particle size change of more than two times. Particularly, the slurry compositions of Comparative Examples 2 to 4 showed serious agglomeration, and the slurry compositions of Comparative Examples 5 to 7 exhibited a slight change in the size of the abrasive grains, but the pH stability was large and the pH stability was drastically decreased. It can be seen that the electrical conductivity changes of the polishing slurry compositions of Examples 1 to 7 were 60 / / cm or less, but in Comparative Examples 1 and 5 to 7, the change in electric conductivity was found to be more than 200 / / cm have. Accordingly, it can be seen that the slurry composition for polishing a polysilicon film of the present invention has excellent stability with little change in abrasive grain size, composition pH and composition electric conductivity.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be determined by the equivalents of the appended claims, as well as the appended claims.

Claims (16)

Quaternary ammonium base compounds;
Amine compounds;
Organic acids; And
Abrasive particles;
Lt; / RTI >
Wherein at least one of the characteristics selected from the group consisting of abrasive grain size, composition pH, and composition electric conductivity is stably maintained until after 24 hours.
The method according to claim 1,
Wherein the abrasive grains have a size change ratio of the abrasive grains of not more than 5% at 60 캜 according to the following formula:
[expression]
Change ratio (%) = [(abrasive particle size after 24 hours - initial abrasive grain size) / initial abrasive grain size] x 100
The method according to claim 1,
Wherein the slurry composition for polishing a polysilicon film has a pH change of 0.5 or less at room temperature.
The method according to claim 1,
Wherein the slurry composition for polishing a polysilicon film has a change in electric conductivity at room temperature of 占 200 占 퐏 / cm or less.
The method according to claim 1,
Wherein the quaternary ammonium base compound comprises a quaternary amine, choline, a salt thereof, or a derivative thereof.
6. The method of claim 5,
The quaternary amine, a salt thereof or a derivative thereof may be at least one selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetraisopropylammonium hydroxide, tetracyclopropylammonium hydroxide, tetra Tetrabutylammonium hydroxide, butylammonium hydroxide, tetraisobutylammonium hydroxide, tetrapentylammonium hydroxide, tetracyclopentylammonium hydroxide, tetrahexylammonium hydroxide, tetracyclohexylammonium hydroxide, tetramethylammonium chloride, tetra Butyl ammonium chloride, trimethyl benzyl ammonium chloride, triethyl benzyl ammonium chloride, tributyl benzyl ammonium chloride, trioctyl methyl ammonium chloride, trimethyldodecyl ammonium chloride, N-lauryl pyridinium chloride, dimethyl pyrrolidinium At least one selected from the group consisting of boron trichloride, trimethyl ammonium bromide, tetraethyl ammonium bromide, tetra-n-butyl ammonium bromide, and dimethyl pyrrolidinium bromide By weight based on the total weight of the slurry composition.
6. The method of claim 5,
The choline, its salt or a derivative thereof may be selected from the group consisting of choline hydroxide, choline fluoride, choline chloride, choline base, choline bromide, Choline iodide, choline dihydrogen citrate, choline bitartrate, choline bicarbonate, choline citrate, choline ascorbate, Choline borate, choline theophyllinate, choline gluconate, acetylcholine chloride, acetylcholine bromide, and methacholine chloride. Wherein the polysilicon film comprises at least one selected from the group consisting of polysilicon film polishing slurry Lee composition.
The method according to claim 1,
The amine compound may be at least one selected from the group consisting of propylamine, dibutylamine, tributylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, butylamine, ethanolamine, isopropylamine, diethanolamine, Propylene (AMP), 2,2-dimethyl-1,3-diaminopropane, hexamethylene diamine, 3-methylaminopropylamine, 3 Dimethylamino propylamine, 4-dimethylaminobutylamine, 2-diethylamino-2-methyl-1-propanol, 1-amino- Amino-2-propanol, 3-dimethylamino-1-propanol, 2-dimethylamino-1-ethanol, 2- ethylamino- N-propyldiethanolamine, N-isopropyldiethanolamine, N- (2-methylpropyl) diethanolamine, N-butyl diethanol Amine, N-butyl ethanolamine, N-cyclohexyl diethanolamine, 2- (dimethylamino) ethanol, 2-diethylaminoethanol, 2-dipropylaminoethanol, 2-methyl-1-propanol, 2- [bis (2-hydroxyethyl) Amino-2-methyl-1-propanol, tris (hydroxymethyl) aminomethane, triisopropanolamine and 5- Dimethylaminopentylamine, and dimethylaminopentylamine. The slurry composition for polishing a polysilicon film according to claim 1,
The method according to claim 1,
Wherein each of the quaternary ammonium base compound and the amine compound is 0.01 wt% to 5 wt% of the slurry composition for polishing a polysilicon film.
The method according to claim 1,
The organic acid is at least one selected from the group consisting of citric acid, acetic acid, adipic acid, lactic acid, phthalic acid, gluconic acid, glycolic acid, propionic acid, oxalic acid, succinic acid, malonic acid, malic acid, tartaric acid, maleic acid, picolinic acid, nicotinic acid, isonicotinic acid, But are not limited to, adipic acid, adipic acid, adipic acid, fumaric acid, isophthalic acid, terephthalic acid, itaconic acid, mandelic acid, phenylacetic acid, 1-naphthoic acid , 2-naphthoic acid, 1,2,3,4-butanetetracarboxylic acid, and glutamic acid. 2. The slurry composition for polishing a polysilicon film according to claim 1,
The method according to claim 1,
Wherein the organic acid is 0.01 wt% to 5 wt% of the slurry composition for polishing the polysilicon film.
The method according to claim 1,
The above-
At least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic or inorganic material, and a metal oxide in a colloidal state,
Wherein the metal oxide comprises at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, manganese, and magnesia.
The method according to claim 1,
Wherein the average particle size of the abrasive grains is 10 nm to 300 nm.
The method according to claim 1,
Wherein the abrasive grains are 0.1 wt% to 10 wt% of the slurry composition for polishing the polysilicon film.
The method according to claim 1,
Wherein the pH of the slurry composition for polishing a polysilicon film is in the range of 9 to 12.
The method according to claim 1,
Wherein the polishing slurry composition for polishing a polysilicon film has a polishing selectivity of a polysilicon film to an oxide film of 10 to 500.