KR102185042B1 - Polishing slurry composition - Google Patents

Abstract

The present invention, abrasive particles; Dispersant; Stabilizers; And a polishing selectivity adjusting agent; wherein the dispersing agent includes an aromatic organic acid including at least one carboxyl group (-COOH), and the polishing selectivity adjusting agent is a first polishing selectivity adjusting agent including an organic acid, an inorganic acid, or both ; And it relates to a slurry composition for polishing containing; a second polishing selectivity control agent comprising an ammonium compound.

Description

Polishing slurry composition {POLISHING SLURRY COMPOSITION}

The present invention relates to a slurry composition for polishing, having a high selectivity and automatic polishing stop function.

In the chemical mechanical polishing (CMP) process, a slurry containing abrasive particles is put on a substrate, and a polishing pad mounted on a polishing device is used. At this time, the abrasive particles mechanically polish the surface under pressure from the polishing apparatus, and chemical components contained in the slurry composition chemically react the surface of the substrate to chemically remove the surface portion of the substrate. In general, there are various types of slurry compositions depending on the type and characteristics of the object to be removed.

The chemical mechanical polishing technique is an essential process for flattening an interlayer insulating film, separating and forming a shallow trench element, and forming a plug and buried metal wiring in a semiconductor device manufacturing process.

As semiconductor devices become denser, finer pattern formation techniques are used, and as the degree of integration and process standards become strict, the need for a highly planarization process of a semiconductor substrate containing various insulating films is increasing. The polishing slurry composition used in the CMP process of a substrate for manufacturing a semiconductor device including an inorganic oxide film such as ITO mainly uses silicon as the abrasive particle, and when ceria is applied, dispersion stability is charged during the polishing process. Since a high polishing rate for the silicon oxide film is generated, it is difficult to implement a selectivity ratio, so there is a technical difficulty in applying it as a CMP slurry for an ITO film.

The present invention is to provide a polishing slurry composition having a high selectivity to a film to be polished, a polishing stop function, and excellent dispersion stability.

However, the problem to be solved by the present invention is not limited to the problems mentioned above, and other problems that are not mentioned will be clearly understood by those skilled in the art from the following description.

According to an embodiment of the present invention, the present invention, abrasive particles; Dispersant; Stabilizers; And a polishing selectivity modifier; Including, wherein the dispersant comprises an aromatic organic acid containing at least one carboxyl group (-COOH), the polishing selectivity control agent is a first polishing selectivity control agent containing an organic acid, an inorganic acid, or both; And it relates to a slurry composition for polishing containing; a second polishing selectivity control agent comprising an ammonium compound.

According to an embodiment of the present invention, the abrasive particles may include at least one selected from the group consisting of a metal oxide, a metal oxide coated with an organic or inorganic material, and a metal oxide in a colloidal state.

According to one embodiment of the present invention, the metal oxide, may be to include at least any one of silica, ceria, zirconia, alumina, titania, barium titania, germania, TKO selected from the group consisting of magnesia, and California.

According to an embodiment of the present invention, the primary particle size of the abrasive particles may be 5 nm to 150 nm, and the secondary particle size of the abrasive particles may be 30 nm to 300 nm.

According to an embodiment of the present invention, the dispersant is contained in an amount of 0.01% to 5% by weight of the slurry composition, and the dispersant is, benzoic acid, phenylacetic acid, naphthoic acid. ), Mandelic acid, Picolinic acid, Dipicolinic acid, Nicotinic acid, Dinicotinic acid, Isonicotinic acid, Quinolinic acid , Anthranilic acid, Fusaric acid, Phthalic acid, Isophthalic acid, Terephthalic acid, Toluic acid, Salicylic acid, Nitrobenzoic acid (nitrobenzoic acid) and pyridine carboxylic acid (Pyridinedicarboxylic acid) may be one containing at least any one selected from the group consisting of.

The stabilizer is included in an amount of 0.001% to 1% by weight of the slurry composition, and the stabilizer is polyethyleneimine (PEI), polypropyleneimine, polyvinylamine, polyallylamine (polyallylamine), polyhexadimethrine, polydimethyl diallyl ammonium (salt)), poly(4-vinylpyridine) (poly(4-vinylpyridine)), polyornithine, Polylysine, polyarginine, poly-L-arginine (PARG), polyhistidine, polyvinyl imidazole, polydiallylamine , Polymethyl diallylamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, polyallyamine hydrochloride ; PAH), poly(vinylpyridine), poly(vinylimidazole), poly-L-lysine (PLL), polyacrylamide, acrylamide derived polymer, quaternary polyamine (quaternary) polyamine), polydimethylamine, polydiallyldimethyl ammonium chloride, poly(dimethylamine-co-epichlorohydrin), poly(methacryloyloxyethyltrimethylammonium chloride), poly(meth) Acryloyloxyethyldimethylbenzyl ammonium chloride), polyamide-amine (polyamide-amin e), diphenylamine-epihydrin-based polymer, dicyandiamide, dicyandiamide, acrylamide, dimethylaminoethyl acrylate ), D-glucosamine derivatives, imino-bis-propylamine, methylimino-bis-propylamine, Laurylimino-bis-propylamine ), pentamethyldiethylenetriamine, pentamethyldipropylenediamine, aminopropyl-1,3-propylenediamine, and aminopropyl-1,4-butylene It may contain at least one selected from the group consisting of diamine (Aminopropyl-1,4-butylenediamine).

According to an embodiment of the present invention, the organic acid is, pimelic acid, malic acid, malonic acid, maleic acid, acetic acid, adipic acid. (adipic acid), oxalic acid, succinic acid, tartaric acid, citric acid, lactic acid, glutaric acid, glycolic acid, Formic acid, fumaric acid, propionic acid, butyric acid, hydroxybutyric acid, aspartic acid, itaconic acid, tricarbalic acid tricarballylic acid), suberic acid, sebacic acid, stearic acid, pyruvic acid, acetoacetic acid, glyoxylic acid, azelaic acid ( azelaic acid), caprylic acid, lauric acid, myristic acid, valeric acid and at least any selected from the group consisting of palmitic acid It may contain one.

According to an embodiment of the present invention, the inorganic acid is hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, perchloric acid, bromic acid, perchloric acid, hydrofluoric acid, iodic acid, nitrous acid, persulfuric acid, sulfurous acid, hyposulfite, boronic acid, iodic acid, phosphoric acid. , Phosphorous acid, hypophosphorous acid, superphosphoric acid, chlorous acid, hypochlorous acid, perchloric acid, bromic acid, hypobromic acid, perbromic acid, hypoiodic acid, periodic acid, hydrogen fluoride, boron trifluoride, tetrafluoroboric acid and phosphorus fluoride It may include at least any one selected from the group consisting of hydrogen acid.

According to an embodiment of the present invention, the second polishing selectivity modifier includes a tertiary ammonium compound, a quaternary ammonium compound, or both, and the ammonium compound includes an ammonium salt, a polymer of an ammonium salt, or both. I can.

According to an embodiment of the present invention, the second polishing selectivity modifier is poly(diallyldimethyl ammonium chloride); poly(bis(2-chloroethyl) ether-alt-1,3 -Bis[3-(dimethylamino)propyl]urea](Poly[bis(2-chloroethyl) ether-alt-1,3-bis[3-(dimethylamino)propyl]urea]); 1,4-dichloro-2 -Butene and 2,2',2'' with N,N,N',N'-tetramethyl-2-butene-1,4-diamine -Nitrilotris ethanol polymer (Ethanol, 2,2',2 ''-nitrilotris-, polymer with 1,4-dichloro-2-butene and N,N,N',N'-tetramethyl-2-butene-1,4-diamine); hydroxyethyl cellulose dimethyl diallylammonium chloride Copolymer (Hydroxyethyl cellulose dimethyl diallylammonium chloride copolymer); Acrylamide/diallyldimethylammonium chloride copolymer (Copolymer of acrylamide and diallyldimethylammonium chloride); Acrylamide quaternized dimethylammonium ethyl methacrylate copolymer (Copolymer of acrylamide and quaternized dimethylammoniumethyl) methacrylate); acrylic acid/diallyldimethylammonium chloride copolymer (Copolymer of acrylic acid and diallyldimethylammonium Chloride); acrylamide/dimethylaminoethyl methacrylate methyl chloride copolymer; quaternized hydroxyethyl Cellulose (Quaternized hydroxyethyl cellulose); vinylpyrrolidone quaternized dimethylaminoethyl methacrylate copolymer ( Copolymer of vinylpyrrolidone and quaternized dimethylaminoethyl methacrylate); Copolymer of vinylpyrrolidone and quaternized vinylimidazole; Vinylpyrrolidone and methacrylamidopropyl trimethylammonium copolymer (Copolymer of vinylpyrrolidone and methacrylamidopropyl trimethylammonium); Poly(2-methacryloxyethyltrimethylammonium chloride); Poly(methacryloxyethyltrimethyl ammonium chloride, PMAC); poly(acrylamide 2-methacryloxyethyltrimethyl ammonium chloride); poly[2-( Dimethylamino)ethyl methacrylate)methyl chloride](poly[2-(dimethylaminoethyl methacrylate methyl chloride]); poly[3-acrylamidopropyl trimethylammonium chloride](poly[3-acrylamidopropyl trimethylammonium chloride]); poly[3 -Methacrylamidopropyl trimethylammonium chloride](poly[3-methacrylamidopropyl trimethylammonium chloride]); poly[oxyethylene(dimethylimino)ethylene dichloride](Poly[oxyethylene(dimethylimino)ethylene (dimethylimino) )ethylenedichloride]); Acrylic acid/acrylamide/diallyldimethylammonium chloride terpolymer (Terpolymer of acrylic acid, acrylamide and diallyldimethylammonium Chloride); acrylic acid/methacrylamidopropyl trimethylammonium chloride/methyl acrylate terpolymer (Terpolymer of acrylic acid) , methacrylamidopropyl trimethylammonium chloride, and methyl acrylate) and vinylcaprolactam/vinylpyrrolidone/quaternized vinylimidazole terpolymer (Terpolymer of vinylcaprolactam, vinylpyrrolidone, and quaternized vinylimidazole); poly(2-methacryloxyethyl) phosphoryl Chlorine-co-en-butyl methacrylate (Poly(2-methacryloxyethyl) phosphorylcholine-co-n-butyl methacrylate); Poly[(dimethylamino)ethylacrylate benzyl chloride quaternary salt] (PDMAEA BCQ); Poly[(dimethylamino)ethylacrylate methyl chloride quaternary salt] (PDMAEA MCQ); Polymethacrylamidopropyltrimonium chloride; 2-acryloxyethyltrimethyl ammonium chloride, 3-methacrylamidopropyltrimethyl ammonium chloride; 2-methacryloxyethyltrimethyl ammonium chloride; Diaryl dimethyl ammonium chloride; 2-acryloxyethyltrimethyl ammonium chloride (AETAC); 3-methacrylamidopropyltrimethyl ammonium chloride (MAPTAC); 2-methacryloxyethyltrimethyl ammonium chloride (METAC); Diallyl dimethyl ammonium chloride (DADMAC); Methyldodecylbenzyl trimethyl ammonium chloride; Polyvinylbenzyl trimethylammonium chloride; Polymethacryloloxyethyl trimethyl ammonium chloride; Polymethacryloloxyethyl trimethyl ammonium methosulfate; Polyepichlorohydrin; Methacryloloxyethyl trimethyl ammonium chloride; Poly-(methacryloloxyethyl dimethyl-hydroxyethyl ammonium chloride); trialkylammonium salt (trialkylammonium salt, alkyl is alkyl having 1 to 10 carbon atoms, anion is halogen, or hydroxide ); dialkylmethylammonium salt (dialkylmethylammonium salt, alkyl is alkyl having 1 to 10 carbon atoms, anion is halogen or hydroxide); and dialkylethylammonium salt (dialkylethylammonium salt, alkyl is alkyl having 1 to 10 carbon atoms, anion is halogen or Hydroxide) may include at least one selected from the group consisting of.

According to an embodiment of the present invention, the first and second polishing selectivity modifiers may include 0.001 wt% to 0.5 wt% of the slurry composition, respectively.

According to an embodiment of the present invention, the polishing slurry composition may have a pH of 1 to 7, and the polishing slurry composition may have a zeta potential of +5 mV to +70 mV.

According to an embodiment of the present invention, when polishing a substrate including an oxide layer and a layer to be polished using the polishing slurry composition, a selectivity ratio of the layer to be polished to the oxide layer may be 10 or more.

According to an embodiment of the present invention, after polishing the substrate using the polishing slurry composition, the polishing rate for the polishing target film may be 1000 Å/min or more.

According to an embodiment of the present invention, the polishing slurry composition may be applied to polishing a thin film including at least one of an insulating film and an inorganic oxide film.

According to an embodiment of the present invention, the inorganic oxide film is, fluorine doped tin oxide (FTO, SnO ₂ :F), indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), and AZO. (Al-doped ZnO), AGZO(Aluminum Gallium Zinc Oxide), GZO(Ga-doped ZnO), IZTO(Indium Zinc Tin Oxide), IAZO(Indium Aluminum Zinc Oxide), IGZO(Indium Gallium Zinc Oxide), IGTO(Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), SnO ₂ , ZnO, IrOx, and RuOx It may include at least one selected from the group consisting of.

According to an embodiment of the present invention, the polishing slurry composition may be applied to a polishing process of a semiconductor device, a display device, or a wafer including both.

In the present invention, when polishing a substrate including a film to be polished (for example, an inorganic oxide film) and a film to be polished (for example, a silicon oxide film), the film to be polished is removed at a high polishing rate, and after the step is removed Due to the high polishing selectivity, the polishing rate in the polishing stop film is very slow, and thus a polishing slurry composition capable of implementing a polishing automatic stop function can be provided.

The present invention can provide a polishing slurry composition capable of maintaining dispersion stability and providing an improved polishing rate for a film to be polished.

The present invention can provide a polishing slurry composition that can be applied to a semiconductor polishing process (e.g., CMP) for semiconductor wiring devices, display substrates, panels, etc., which require a planarization process of an inorganic oxide film (e.g., ITO). have.

Hereinafter, embodiments will be described in detail with reference to the detailed description.

Various changes may be made to the embodiments described below. The embodiments described below are not intended to limit the scope of the invention to the described embodiments, and the scope to be claimed as a right through the present application should be understood to include all changes, equivalents, and substitutes thereto.

The terms used in the examples are used only to describe specific embodiments, and are not intended to limit the embodiments. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present specification, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, but one or more other features. It is to be understood that it does not exclude the possibility of the presence or addition of elements or numbers, steps, actions, components, parts, or combinations thereof.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the embodiment belongs. Terms as defined in a commonly used dictionary should be interpreted as having a meaning consistent with the meaning in the context of the related technology, and should not be interpreted as an ideal or excessively formal meaning unless explicitly defined in this application. Does not.

When an element or layer is referred to as being “on”, “connected to”, or “coupled to” another element or layer, it is directly the other component or It may be understood that it may be in a layer, may be connected, may be combined, or intervening elements and layers may be present.

The present invention relates to a slurry composition for polishing, and according to an embodiment of the present invention, the slurry composition for polishing comprises: abrasive particles; Dispersant; Stabilizers; And a polishing selectivity modifier; Including, and may further include a residual amount of the solvent.

According to an embodiment of the present invention, the abrasive particles may be included in 0.5% to 10% by weight of the slurry composition. When the amount of the abrasive particles is less than 0.5% by weight of the slurry composition, there is a problem that the polishing rate is reduced, and when the amount is more than 10% by weight, defects such as defects and scratches due to excessive polishing may occur.

The abrasive particles provide high dispersion stability and promote oxidation of an inorganic oxide film such as a polishing target film, for example, ITO, to easily polish the inorganic oxide film to achieve high polishing characteristics while minimizing defects such as scratches. have.

The abrasive particles, metal oxide; Metal oxides coated with organic or inorganic substances; And the metal oxide in a colloidal state; and the metal oxide includes at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, mangania, and magnesia. It may include at least one selected. For example, the abrasive particles may be colloidal ceria dispersed with a positive charge.

The abrasive particles may include those manufactured by a liquid phase method. In the liquid phase method, a chemical reaction occurs in an aqueous solution of an abrasive particle precursor, a sol-gel method in which crystals are grown to obtain fine particles, a coprecipitation method in which abrasive particle ions are precipitated in an aqueous solution, and abrasive particles are formed under high temperature and high pressure. It can be manufactured by applying a hydrothermal synthesis method. The abrasive particles produced by the liquid phase method are dispersed so that the surface of the abrasive particles has a positive charge.

The abrasive particles may be monocrystalline. When single crystal abrasive particles are used, scratch reduction effects can be achieved compared to polycrystalline abrasive particles, dishing can be improved, and cleaning properties after polishing can be improved.

The shape of the abrasive particles may include at least one selected from the group consisting of a spherical shape, a square shape, a needle shape, and a plate shape, and preferably a spherical shape.

The primary particle size of the abrasive particles may be 5 nm to 150 nm, and the secondary particle size may be 30 nm to 300 nm. The measurement of the average particle diameter of the abrasive particles is an average value of the particle diameters of a plurality of particles within a field of view that can be measured by scanning electron microscope analysis, BET analysis, or dynamic light scattering. The size of the primary particles should be 150 nm or less in order to ensure particle uniformity, and when the size is less than 5 nm, the polishing rate may decrease. If the size of the secondary particles is less than 30 nm, excessive generation of small particles due to milling results in deterioration of cleanability, excessive defects occur on the surfaces of substrates and wafers used in the polishing process, and exceeds 300 nm. In this case, excessive polishing is performed, making it difficult to control the selectivity, and dishing, erosion and surface defects may occur.

In addition to single-sized particles, the abrasive particles may be mixed particles including a multi-dispersion type particle distribution. For example, two types of abrasive particles having different average particle sizes are mixed to form a bimodal particle. ) May have a particle size distribution or a particle size distribution showing three peaks by mixing three types of abrasive particles having different average particle sizes. Alternatively, four or more types of abrasive particles having different average particle sizes may be mixed to have a polydispersed particle distribution. Since the relatively large abrasive particles and the relatively small abrasive particles are mixed, it has better dispersibility and an effect of reducing scratches on the wafer surface can be expected.

The dispersant may be applied to induce a uniform and stable dispersion of the abrasive particles, and to control polishing performance and polishing selectivity. The dispersant may include 0.01% to 5% by weight of the slurry composition. When the content of the dispersant is less than 0.01% by weight, it is difficult to secure particle dispersibility and phase stability, and when it exceeds 5% by weight, dispersion stability may be deteriorated, making it difficult to implement polishing performance.

The dispersant may include an organic acid containing an aromatic ring having 6 to 20 carbon atoms and at least one carboxyl group (-COOH). For example, the organic acid may be one in which a carbon atom in the aromatic ring is substituted with a nitrogen atom, and may further include a nitro group, an amine group, a sulfone group, a phosphoric acid group, an alkyl group, a hydroxyl group, and the like. More specifically, Benzoic acid, Phenylacetic acid, Naphthoic acid, Mandelic acid, Picolinic acid, Dipicolinic acid, Nicotinic acid acid), Dinicotinic acid, Isonicotinic acid, Quinolinic acid, anthranilic acid, Fusaric acid, Phthalic acid, Isophthalic acid , Terephthalic acid, toluic acid, salicylic acid, nitrobenzoic acid, and pyridine carboxylic acid (Pyridinedicarboxylic Acid) may include at least one selected from the group consisting of.

The stabilizer may serve as a pH buffer to ensure particle dispersibility and dispersion stability, and for example, various additives, for example, a polishing selectivity control agent, to control the polishing performance of the polishing slurry composition. It is possible to prevent deterioration of dispersion stability due to application and stably maintain dispersion stability even during the polishing process. Moreover, it is possible to improve the polishing rate of the film to be polished and the stopping performance of the polishing stop film by facilitating the addition of the polishing selectivity adjusting agent.

The stabilizer may be included in an amount of 0.001% to 1% by weight of the slurry composition, and when the content of the stabilizer is less than 0.001% by weight, dispersion stability is lowered, making it difficult to implement desired polishing performance, and 1% by weight If it is exceeded, the dispersion stability decreases due to the addition of an excessive amount of stabilizer, resulting in agglomeration, which may lead to micro-defects and scratches.

The stabilizer may be an amine-based compound having a repeating unit including at least one amine group and an aliphatic hydrocarbon. The amine compound may be an ionic compound, a salt, a monomer, a polymer and a copolymer including the monomer. For example, the amine-based compound is polyethyleneimine (PEI), polypropyleneimine, polyvinylamine, polyallylamine, polyhexadimethrine, polydimethyl Diaryl ammonium (polydimethyl diallyl ammonium (salt)), poly(4-vinylpyridine) (poly(4-vinylpyridine)), polyornithine, polylysine, polyarginine, poly-L -Arginine (poly-L-arginine; PARG), polyhistidine, polyvinyl imidazole, polydiallylamine, polymethyl diallylamine, diethylenetriamine (diethylenetriamine), triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, polyallyaminehydrochloride (PAH), poly(vinylpyridine), poly(vinylimida) Sol), poly-L-lysine (PLL), polyacrylamide, acrylamide derived polymer, quaternary polyamine, polydimethylamine, polyallyldimethyl ammonium chloride (polydiallyldimethyl ammonium chloride), poly(dimethylamine-co-epichlorohydrin), poly(methacryloyloxyethyltrimethylammonium chloride), poly(methacryloyloxyethyldimethylbenzyl ammonium chloride), polyamide-amine (polyamide-amine), diphenylamine-epihydrin-based polymer (dimethylamine- epihydrin-based polymer), dicyandiamide, dicyandiamide, acrylamide, dimethylaminoethyl acrylate, D-glucosamine derivative, iminobis Imino-bis-propylamine, methylimino-bis-propylamine, Laurylimino-bis-propylamine, pentamethyldiethylenetriamine, pentamethyldi Selected from the group consisting of propylenediamine (Pentamethyldipropylenediamine), aminopropyl-1,3-propylenediamine, and aminopropyl-1,4-butylenediamine It may include at least any one of.

The polishing selectivity adjusting agent is for increasing the polishing rate of the polishing target film and adjusting the polishing selectivity to achieve a high selectivity, and a first polishing selectivity adjusting agent acting as an etchant for promoting polishing of the polishing target film and polishing A second polishing selectivity adjusting agent for lowering the polishing rate of the stop film may be included. For example, the polishing selectivity adjusting agent increases the polishing rate of the film to be polished by the first polishing selectivity adjusting agent and suppresses polishing on the surface of the polishing stop film by the second polishing selectivity adjusting agent, thereby providing an automatic polishing stop function. Can be implemented.

The first polishing selectivity modifier may include an organic acid, an inorganic acid, or both. For example, the organic acid may be a strongly acidic organic acid having a pKa 6 or less. More specifically, the organic acid is pimelic acid, malic acid, malonic acid, maleic acid, acetic acid, adipic acid, Oxalic acid, succinic acid, tartaric acid, citric acid, lactic acid, glutaric acid, glycolic acid, formic acid , Fumaric acid, propionic acid, butyric acid, hydroxybutyric acid, aspartic acid, itaconic acid, tricarballylic acid, water Suberic acid, sebacic acid, stearic acid, pyruvic acid, acetoacetic acid, glyoxylic acid, azelaic acid, carbohydrate It may include at least one selected from the group consisting of caprylic acid, lauric acid, myristic acid, valeric acid, and palmitic acid. have.

The inorganic acids are hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, perchloric acid, bromic acid, perchloric acid, hydrofluoric acid, iodic acid, nitrous acid, persulfuric acid, sulfurous acid, hyposulfuric acid, boronic acid, iodic acid, phosphoric acid, phosphorous acid, hypophosphorous acid, superphosphoric acid, and At least any one selected from the group consisting of chloric acid, hypochlorous acid, perchloric acid, bromic acid, hypobromic acid, perbromic acid, hypoiodic acid, periodic acid, hydrogen fluoride, boron trifluoride, tetrafluoroboric acid, and hydrophosphoric acid It can contain one.

The first polishing selectivity control agent is included in 0.001% by weight to 1% by weight of the slurry composition, and when it is less than 0.001% by weight, it is difficult to improve the polishing performance and control the selectivity for the film to be polished, and exceed 1% by weight. In some cases, scratches due to excessive polishing of the target film, micro defects, and corrosion of the target film may increase.

The second polishing selectivity modifier includes a tertiary ammonium compound, a quaternary ammonium compound, or both, the ammonium compound includes an ammonium salt, a polymer of an ammonium salt, or both, and the polymer may be a single or a copolymer have. When the second polishing selectivity control agent reaches the polishing stop film (eg, silicon oxide film), it interferes with the chemical bonding between the polishing stop film and the abrasive particles, thereby lowering the polishing rate of the polishing stop film and improving the automatic polishing stop function. I can.

The second polishing selectivity modifier is included in 0.001% by weight to 1% by weight of the slurry composition, and if it is less than 0.001% by weight, the polishing rate for the oxide film increases, making it difficult to implement a high selectivity and improve the polishing stop function. If it exceeds 1% by weight, the polishing rate of the film to be polished is lowered, and thus polishing may not be performed well.

The ammonium compound is poly(diallyldimethyl ammonium chloride); poly[bis(2-chloroethyl)ether-alt-1,3-bis[3-(dimethylamino)propyl]urea] (Poly[bis(2-chloroethyl) ether-alt-1,3-bis[3-(dimethylamino)propyl]urea]); 1,4-dichloro-2-butene and N,N,N',N'- 2,2',2''-nitrilotris ethanol polymer with tetramethyl-2-butene-1,4-diamine (Ethanol, 2,2',2''-nitrilotris-, polymer with 1,4-dichloro -2-butene and N,N,N',N'-tetramethyl-2-butene-1,4-diamine); Hydroxyethyl cellulose dimethyl diallylammonium chloride copolymer; Acrylamide /Copolymer of acrylamide and diallyldimethylammonium chloride; Copolymer of acrylamide and quaternized dimethylammoniumethyl methacrylate; Acrylic acid/diallyldimethylammonium chloride copolymer ( Copolymer of acrylic acid and diallyldimethylammonium Chloride); acrylamide-dimethylaminoethyl methacrylate methyl chloride copolymer; quaternized hydroxyethyl cellulose; vinylpyrrolidone/4 Classified dimethylaminoethyl methacrylate copolymer (Copolymer of vinylpyrro) lidone and quaternized dimethylaminoethyl methacrylate); Copolymer of vinylpyrrolidone and quaternized vinylimidazole; Vinylpyrrolidone and methacrylamidopropyl trimethylammonium copolymer (Copolymer of vinylpyrrolidone and methacrylamidopropyl trimethylammonium); Poly(2-methacryloxyethyltrimethylammonium chloride); Poly(methacryloxyethyltrimethyl ammonium chloride, PMAC); poly(acrylamide 2-methacryloxyethyltrimethyl ammonium chloride); poly[2-( Dimethylamino)ethyl methacrylate)methyl chloride](poly[2-(dimethylaminoethyl methacrylate methyl chloride]); poly[3-acrylamidopropyl trimethylammonium chloride](poly[3-acrylamidopropyl trimethylammonium chloride]); poly[3 -Methacrylamidopropyl trimethylammonium chloride](poly[3-methacrylamidopropyl trimethylammonium chloride]); poly[oxyethylene(dimethylimino)ethylene dichloride](Poly[oxyethylene(dimethylimino)ethylene (dimethylimino) )ethylenedichloride]); Acrylic acid/acrylamide/diallyldimethylammonium chloride terpolymer (Terpolymer of acrylic acid, acrylamide and diallyldimethylammonium Chloride); acrylic acid/methacrylamidopropyl trimethylammonium chloride/methyl acrylate terpolymer (Terpolymer of acrylic acid) , methacrylamidopropyl trimethylammonium chloride, and methyl acrylate) and vinylcaprolactam/vinylpyrrolidone/quaternized vinylimidazole terpolymer (Terpolymer of vinylcaprolactam, vinylpyrrolidone, and quaternized vinylimidazole); poly(2-methacryloxyethyl) phosphoryl Chlorine-co-en-butyl methacrylate (Poly(2-methacryloxyethyl) phosphorylcholine-co-n-butyl methacrylate); Poly[(dimethylamino)ethylacrylate benzyl chloride quaternary salt] (PDMAEA BCQ); Poly[(dimethylamino)ethylacrylate methyl chloride quaternary salt] (PDMAEA MCQ); Polymethacrylamidopropyltrimonium chloride; 2-acryloxyethyltrimethyl ammonium chloride, 3-methacrylamidopropyltrimethyl ammonium chloride; 2-methacryloxyethyltrimethyl ammonium chloride; Diaryl dimethyl ammonium chloride; 2-acryloxyethyltrimethyl ammonium chloride (AETAC); 3-methacrylamidopropyltrimethyl ammonium chloride (MAPTAC); 2-methacryloxyethyltrimethyl ammonium chloride (METAC); Diallyl dimethyl ammonium chloride (DADMAC); Methyldodecylbenzyl trimethyl ammonium chloride; Polyvinylbenzyl trimethylammonium chloride; Polymethacryloloxyethyl trimethyl ammonium chloride; Polymethacryloloxyethyl trimethyl ammonium methosulfate; Polyepichlorohydrin; Methacryloloxyethyl trimethyl ammonium chloride; Poly-(methacryloloxyethyl dimethyl-hydroxyethyl ammonium chloride); trialkylammonium salt (trialkylammonium salt, alkyl is alkyl having 1 to 10 carbon atoms, anion is halogen, or hydroxide ); dialkylmethylammonium salt (dialkylmethylammonium salt, alkyl is alkyl having 1 to 10 carbon atoms, anion is halogen or hydroxide); and dialkylethylammonium salt (dialkylethylammonium salt, alkyl is alkyl having 1 to 10 carbon atoms, anion is halogen or Hydroxide) may include at least one selected from the group consisting of.

According to an embodiment of the present invention, the polishing slurry composition may further include a pH adjusting agent. For example, nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, bromic acid, iodic acid, formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, salicylic acid , Pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid, lactic acid, aspartic acid, tartaric acid, polyacrylic acid, polypropionic acid, polysalicylic acid, polybenzoic acid, polybutyric acid, and salts thereof. Acidic substances and ammonia, AMP (ammonium methyl propanol), TMAH (tetra methyl ammonium hydroxide), potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, ammonium hydroxide, cesium hydroxide, sodium hydrogen carbonate, sodium carbonate , It may contain at least one selected from the group consisting of imidazole. The pH adjusting agent may be added in an amount to adjust the pH of the polishing slurry composition.

The pH of the polishing slurry composition according to the present invention is preferably adjusted to produce dispersion stability and an appropriate polishing rate according to the abrasive particles, and the pH of the polishing slurry composition is 1 to 7; Preferably, it may have an acidic pH range of 1 to 5.

The polishing slurry composition according to the present invention may be a slurry composition exhibiting a positive charge, and the zeta potential of the slurry composition may be in the range of +5mV to +70mV. Due to the positively charged abrasive particles, a high dispersion stability is maintained so that agglomeration of the abrasive particles does not occur, thereby reducing the occurrence of micro-scratches.

According to an embodiment of the present invention, the polishing slurry composition may be concentrated or diluted.

According to an embodiment of the present invention, the polishing slurry composition may be applied to a semiconductor device, a display device, or a polishing process of both, for example, a chemical mechanical polishing (CMP) process.

The polishing slurry composition may be applied to a planarization process of a semiconductor device and a display device in which a thin film including an inorganic oxide film is used as a polishing target film.

The inorganic oxide layer is indium (In), tin (Sn), silicon (Si), titanium (Ti), vanadium (V), gadolium (Ga), manganese (Mn), iron (Fe), cobalt (Co) , Copper (Cu), zinc (Zn), zirconium (Zr), hafnium (Hf), aluminum (Al), niobium (Nb), nickel (Ni), chromium (Cr), molybdenum (Mo), tantalum ( Oxide containing at least one selected from the group consisting of Ta), ruthenium (Ru), tungsten (W), tin (Sn), aluminum (Al), antimony (Sb), Ir (iridium) and Ni (nickel) , Nitride or both, and may be doped with halogen or the like. For example, FTO (fluorine doped tin oxide, SnO ₂ : F), ITO (indium tin oxide), IZO (indium zinc oxide), IGZO (indium gallium zinc oxide), AZO (Al-doped ZnO), AGZO (Aluminum Gallium Zinc Oxide), GZO(Ga-doped ZnO), IZTO(Indium Zinc Tin Oxide), IAZO(Indium Aluminum Zinc Oxide), IGZO(Indium Gallium Zinc Oxide), IGTO(Indium Gallium Tin Oxide), ATO(Antimony Tin Oxide) ), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), SnO ₂ , ZnO, IrOx, RuOx, and at least one selected from the group consisting of NiO.

The display device may be a substrate or a panel, and may be a TFT or an organic light emitting display device.

According to an embodiment of the present invention, the polishing rate for the polishing target film of the polishing slurry composition is 1000 Å/min or more, 2000 Å/min or more; Alternatively, it may be 2000 Å/min to 4000 Å/min. The polishing rate of the polishing stop film has a lower speed than that of the film to be polished, and may be polished to 100 Å/min or less, preferably 50 Å/min or less. For example, when polishing a substrate including an inorganic oxide film such as ITO and a silicon oxide film, the ITO film may be polished at a high speed, and the silicon oxide film may be polished at a low speed to provide the function of an automatic polishing stop film.

According to an embodiment of the present invention, when polishing using the polishing slurry composition, a film to be polished may be selectively removed, and a selectivity ratio of a film to be polished to a stop film is 10 or more and 30 or more; 80 or more; Alternatively, it may be 80 to 200 (a polishing rate of the polishing target film/polishing stop film). For example, when polishing a substrate including an inorganic oxide film such as ITO and a silicon oxide film, the selectivity of the inorganic oxide film to the silicon oxide film may be 80:1 (inorganic oxide film: silicon oxide film) or more, according to the present invention. When polishing using the polishing slurry composition, the inorganic oxide film is polished at high speed, and an improved automatic polishing stop function for the oxide film can be provided.

According to an embodiment of the present invention, when a pattern wafer is polished using the polishing slurry composition, a high polishing rate is ensured not only on a wafer with a small pattern density but also on a wafer with a large pattern density, and dishing, erosion, etc. Can lower.

Hereinafter, the present invention will be described in detail with reference to the following examples. However, the technical idea of the present invention is not limited or limited thereby.

Examples 1 to 7

According to Table 1, colloidal ceria (HC-60, Solvay, secondary particle size: 100-150 nm) with an average particle size of 60 nm (BET measurement) 4% by weight, and picolinic acid as a dispersant , PA), polyethyleneimine (PEI) as a stabilizer, oxalic acid and quaternary/third ammonium compounds (MRP: MIRAPOL™, PMAC: poly(methacryloxyethyltrimethyl ammonium chloride)) and ultrapure water as a stabilizer. By mixing, according to Table 1, a polishing slurry composition having a solid content of 0.5 to 10% by weight was prepared.

Comparative Examples 1 to 10

According to Table 1, a slurry composition was prepared in the same manner as in Example 1, except that the quaternary/third ammonium compound was not added or the secondary ammonium compound (PEHA: Pentaethylenehexamine) was added.

(1) Evaluation of dispersion stability

In order to evaluate the dispersion stability of the slurry compositions of the examples, the particle size was measured on the 0th and 1st days, respectively, to measure the aging stability.

Dispersant
(weight%) Stabilizer
(weight%) 1st polishing
Selective ratio modifier (% by weight) 2nd polishing selectivity regulator pH Dispersion stability 4th
Ammonium salt (% by weight) 3rd
Ammonium salt (% by weight) Secondary
Ammonium salt (% by weight) PA PEI Oxalic acid MRP PMAC PEHA Example 1 0.2 0.02 0.1 0.02 0 0 3.13 Great Example 2 0.6 0.02 0.08 0.02 0 0 2.67 Great Example 3 0.6 0.04 0.09 0.02 0 0 3.01 Great Example 4 One 0.04 0.09 0.02 0 0 2.65 Great Example 5 One 0.04 0.09 0.04 0 0 2.99 Great Example 6 One 0.04 0.09 0 0.04 0 3.02 Great Example 7 One 0.04 0.09 0 0.06 0 3.07 Great Comparative Example 1 0.2 0.02 0.08 0 0 0 2.71 Great Comparative Example 2 0.2 0.02 0.1 0 0 0 3.18 Great Comparative Example 3 0.2 0.02 0.12 0 0 0 3.15 Great Comparative Example 4 0.2 0.04 0.12 0 0 0 3.07 Great Comparative Example 5 0.4 0.04 0.08 0 0 0 2.87 Great Comparative Example 6 0.8 0.04 0.08 0 0 0 2.79 Great Comparative Example 7 One 0.04 0.09 0 0 0 2.81 Great Comparative Example 8 1.2 0.04 0.09 0 0 0 2.78 Great Comparative Example 9 One 0.04 0.09 0 0 0.04 2.79 Great Comparative Example 10 One 0.04 0.09 0 0 0.06 2.80 Great

Looking at Table 1, it can be seen that even when oxalic acid serving as an etchant is added, it has good dispersion stability in all slur compositions by the amine-based dispersant and stabilizer.

(2) Evaluation of polishing properties

Using the polishing slurry composition of the example, the substrate containing the ITO film and the SiO ₂ film by TEOS deposition was polished under the following polishing conditions.

[Polishing conditions]

1. Polishing equipment: AP-300 from CTS

2. Wafer: 300mm ITO Membrane Wafer

3. Platen pressure: 4psi

4. Spindle speed: 100rpm

5. Platen speed: 105rpm

6. Flow rate: 300ml/min

TEOS R/R
(Å/min) ITO R/R
(Å/min) ITO/TEOS selectivity Example 1 43 3478 81 Example 2 33 2941 89 Example 3 28 2347 84 Example 4 21 3874 184 Example 5 18 3741 208 Example 6 33 3941 119 Example 7 28 3514 126 Comparative Example 1 279 2996 11 Comparative Example 2 306 4012 13 Comparative Example 3 315 3612 11 Comparative Example 4 247 3222 13 Comparative Example 5 291 3932 14 Comparative Example 6 218 2312 11 Comparative Example 7 198 4050 20 Comparative Example 8 201 3748 19 Comparative Example 9 157 3512 22 Comparative Example 10 147 3124 21

Looking at Table 2, Examples and Comparative Examples show the polishing rate of the ITO film of 2000 Å/min or more, which is improved the polishing rate of the ITO film by the application of oxalic acid serving as an etchant of the ITO film, and by the aromatic organic acid and PEI. A stable polishing process can be performed without deteriorating dispersion stability due to the addition of oxalic acid. In addition, Examples 1 to 7 of the present invention reduce the polishing rate of the SiO ₂ film by the application of the tertiary and quaternary ammonium compounds, so that the high selectivity of the ITO film and the excellent automatic stop function can be implemented. On the contrary, in Comparative Examples 1 to 10 in which the tertiary and quaternary ammonium compounds were not added or the secondary ammonium was added, it was difficult to implement the selectivity of the ITO film, and the polishing rate of the silicon oxide film was increased, so that the automatic polishing function was relatively low. It is predictable.

The polishing slurry composition of the present invention can improve the polishing rate of the ITO film and the ITO/SiO ₂ polishing selectivity and provide excellent automatic polishing stop performance for the SiO ₂ film.

As described above, although the embodiments have been described by the limited drawings, a person of ordinary skill in the art can apply various technical modifications and variations based on the above. For example, even if the described techniques are performed in a different order from the described method, and/or the described components are combined or combined in a form different from the described method, or are replaced or substituted by other components or equivalents. Appropriate results can be achieved.

Therefore, other implementations, other embodiments and claims and equivalents fall within the scope of the following claims.

Claims (17)

Abrasive particles;
Dispersant;
Stabilizers; And
Polishing selectivity modifier;
Including,
The dispersant includes an aromatic organic acid containing at least one carboxyl group (-COOH),
The polishing selectivity adjusting agent may include a first polishing selectivity adjusting agent including an organic acid, an inorganic acid, or both; And a second polishing selectivity modifier comprising an ammonium compound; and
The polishing target films are FTO (fluorine doped tin oxide, SnO ₂ : F), ITO (indium tin oxide), IZO (indium zinc oxide), IGZO (indium gallium zinc oxide), AZO (Al-doped ZnO), AGZO (Aluminum Gallium Zinc Oxide), GZO(Ga-doped ZnO), IZTO(Indium Zinc Tin Oxide), IAZO(Indium Aluminum Zinc Oxide), IGTO(Indium Gallium Tin Oxide), ATO(Antimony Tin Oxide), GZO(Gallium Zinc Oxide) , IZON (IZO Nitride), SnO ₂ , ZnO, IrOx and RuOx that is at least one inorganic oxide film selected from the group consisting of,
Polishing slurry composition.
The method of claim 1,
The abrasive particles are included in 0.5% to 10% by weight of the slurry composition,
The abrasive particles include at least one selected from the group consisting of a metal oxide, a metal oxide coated with an organic material or an inorganic material, and a colloidal metal oxide,
Polishing slurry composition.
The method of claim 2,
Is to include at least one in which the metal oxide is selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, magnesia, and broken California,
Polishing slurry composition.
The method of claim 1,
The primary particle size of the abrasive particles is 5 nm to 150 nm,
The secondary particle size of the abrasive particles is 30 nm to 300 nm,
Polishing slurry composition.
The method of claim 1,
The dispersant is included in 0.01% to 5% by weight of the slurry composition,
The dispersant is benzoic acid, phenylacetic acid, naphthoic acid, mandelic acid, picolinic acid, dipicolinic acid, nicotinic acid acid), Dinicotinic acid, Isonicotinic acid, Quinolinic acid, anthranilic acid, Fusaric acid, Phthalic acid, Isophthalic acid , Terephthalic acid, toluic acid, salicylic acid, nitrobenzoic acid and pyridine carboxylic acid (Pyridinedicarboxylic Acid) that contains at least one selected from the group consisting of,
Polishing slurry composition.
The method of claim 1,
The stabilizer is included in 0.001% to 1% by weight of the slurry composition,
The stabilizer is polyethyleneimine (PEI), polypropyleneimine, polyvinylamine, polyallylamine, polyhexadimethrine, polydimethyldiarylammonium (polydimethyl diallyl ammonium (salt)), poly(4-vinylpyridine)), polyornithine, polylysine, polyarginine, poly-L-arginine L-arginine; PARG), polyhistidine, polyvinyl imidazole, polydiallylamine, polymethyl diallylamine, diethylenetriamine, tri Ethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, polyallyaminehydrochloride (PAH), poly(vinylpyridine), poly(vinylimidazole), poly- L-lysine (poly-L-lysine; PLL), polyacrylamide, acrylamide derived polymer, quaternary polyamine, polydimethylamine, polydiallyldimethyl ammonium chloride , Poly(dimethylamine-co-epichlorohydrin), poly(methacryloyloxyethyltrimethylammonium chloride), poly(methacryloyloxyethyldimethylbenzylammonium chloride), polyamide-amine , Diphenylamine-epihydrin-based polymer (dimethylamine-epihydrin-b ased polymer), dicyandiamide, dicyandiamide, acrylamide, dimethylaminoethyl acrylate, D-glycosamine derivative, iminobispropylamine (Imino-bis-propylamine), methylimino-bis-propylamine, Lauryimino-bis-propylamine, pentamethyldiethylenetriamine, pentamethyldipropylenediamine (Pentamethyldipropylenediamine), aminopropyl-1,3-propylenediamine (Aminopropyl-1,3-propylenediamine), and aminopropyl-1,4-butylenediamine (Aminopropyl-1,4-butylenediamine) at least selected from the group consisting of Which includes any one,
Polishing slurry composition.
The method of claim 1,
The organic acid is pimelic acid, malic acid, malonic acid, maleic acid, acetic acid, adipic acid, oxalic acid ), succinic acid, tartaric acid, citric acid, lactic acid, glutaric acid, glycolic acid, formic acid, fumaric acid acid), propionic acid, butyric acid, hydroxybutyric acid, aspartic acid, itaconic acid, tricarballylic acid, suberic acid acid), sebacic acid, stearic acid, pyruvic acid, acetoacetic acid, glyoxylic acid, azelaic acid, caprylic acid acid), lauric acid, myristic acid, valeric acid, and palmitic acid, which comprises at least one selected from the group consisting of,
Polishing slurry composition.
The method of claim 1,
The inorganic acids are hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, perchloric acid, bromic acid, perchloric acid, hydrofluoric acid, iodic acid, nitrous acid, persulfuric acid, sulfurous acid, hyposulfuric acid, boronic acid, iodic acid, phosphoric acid, phosphorous acid, hypophosphorous acid, superphosphoric acid, phosphorous acid. At least any one selected from the group consisting of chloric acid, hypochlorous acid, perchloric acid, bromic acid, hypobromic acid, perbromic acid, hypoiodic acid, periodic acid, hydrogen fluoride, boron trifluoride, tetrafluoroboric acid, and hydrophosphoric acid Containing one,
Polishing slurry composition.
The method of claim 1,
The second polishing selectivity modifier includes a tertiary ammonium compound, a quaternary ammonium compound, or both,
The ammonium compound comprises an ammonium salt, a polymer of an ammonium salt, or both,
Polishing slurry composition.
The method of claim 1,
The second polishing selectivity modifier,
Poly(diallyldimethyl ammonium chloride); poly[bis(2-chloroethyl)ether-alt-1,3-bis[3-(dimethylamino)propyl]urea](Poly[bis( 2-chloroethyl) ether-alt-1,3-bis[3-(dimethylamino)propyl]urea]); 1,4-dichloro-2-butene and N,N,N',N'-tetramethyl-2- 2,2',2''-nitrilotris ethanol polymer with butene-1,4-diamine (Ethanol, 2,2',2''-nitrilotris-, polymer with 1,4-dichloro-2-butene and N,N,N',N'-tetramethyl-2-butene-1,4-diamine); Hydroxyethyl cellulose dimethyl diallylammonium chloride copolymer; Acrylamide/diallyldimethylammonium Chloride copolymer (Copolymer of acrylamide and diallyldimethylammonium chloride); Acrylamide quaternized dimethylammoniumethyl methacrylate copolymer (Copolymer of acrylamide and quaternized dimethylammoniumethyl methacrylate); Acrylic acid/diallyldimethylammonium chloride copolymer (Copolymer of acrylic acid and diallyldimethylammonium Chloride); Acrylamide/dimethylaminoethyl methacrylate methyl chloride copolymer; Quaternized hydroxyethyl cellulose; Vinylpyrrolidone/quaternary dimethylaminoethyl meta Acrylate copolymer (Copolymer of vinylpyrrolidone and qu aternized dimethylaminoethyl methacrylate); Copolymer of vinylpyrrolidone and quaternized vinylimidazole; Vinylpyrrolidone and methacrylamidopropyl trimethylammonium copolymer (Copolymer of vinylpyrrolidone and methacrylamidopropyl trimethylammonium); Poly(2-methacryloxyethyltrimethylammonium chloride); Poly(methacryloxyethyltrimethyl ammonium chloride, PMAC); poly(acrylamide 2-methacryloxyethyltrimethyl ammonium chloride); poly[2-( Dimethylamino)ethyl methacrylate)methyl chloride](poly[2-(dimethylaminoethyl methacrylate methyl chloride]); poly[3-acrylamidopropyl trimethylammonium chloride](poly[3-acrylamidopropyl trimethylammonium chloride]); poly[3 -Methacrylamidopropyl trimethylammonium chloride](poly[3-methacrylamidopropyl trimethylammonium chloride]); poly[oxyethylene(dimethylimino)ethylene dichloride](Poly[oxyethylene(dimethylimino)ethylene (dimethylimino) )ethylenedichloride]); Acrylic acid/acrylamide/diallyldimethylammonium chloride terpolymer (Terpolymer of acrylic acid, acrylamide and diallyldimethylammonium Chloride); acrylic acid/methacrylamidopropyl trimethylammonium chloride/methyl acrylate terpolymer (Terpolymer of acrylic acid) , methacrylamidopropyl trimethylammonium chloride, and methyl acrylate) and vinylcaprolactam/vinylpyrrolidone/quaternized vinylimidazole terpolymer (Terpolymer of vinylcaprolactam, vinylpyrrolidone, and quaternized vinylimidazole); poly(2-methacryloxyethyl) phosphoryl Chlorine-co-en-butyl methacrylate (Poly(2-methacryloxyethyl) phosphorylcholine-co-n-butyl methacrylate); Poly[(dimethylamino)ethylacrylate benzyl chloride quaternary salt] (PDMAEA BCQ); Poly[(dimethylamino)ethylacrylate methyl chloride quaternary salt] (PDMAEA MCQ); Polymethacrylamidopropyltrimonium chloride; 2-acryloxyethyltrimethyl ammonium chloride, 3-methacrylamidopropyltrimethyl ammonium chloride; 2-methacryloxyethyltrimethyl ammonium chloride; Diaryl dimethyl ammonium chloride; 2-acryloxyethyltrimethyl ammonium chloride (AETAC); 3-methacrylamidopropyltrimethyl ammonium chloride (MAPTAC); 2-methacryloxyethyltrimethyl ammonium chloride (METAC); Diallyl dimethyl ammonium chloride (DADMAC); Methyldodecylbenzyl trimethyl ammonium chloride; Polyvinylbenzyl trimethylammonium chloride; Polymethacryloloxyethyl trimethyl ammonium chloride; Polymethacryloloxyethyl trimethyl ammonium methosulfate; Polyepichlorohydrin; Methacryloloxyethyl trimethyl ammonium chloride; Poly-(methacryloloxyethyl dimethyl-hydroxyethyl ammonium chloride); trialkylammonium salt (trialkylammonium salt, alkyl is alkyl having 1 to 10 carbon atoms, anion is halogen, or hydroxide ); dialkylmethylammonium salt (dialkylmethylammonium salt, alkyl is alkyl having 1 to 10 carbon atoms, anion is halogen or hydroxide); and dialkylethylammonium salt (dialkylethylammonium salt, alkyl is alkyl having 1 to 10 carbon atoms, anion is halogen or It includes at least one selected from the group consisting of hydroxide),
Polishing slurry composition.
The method of claim 1,
The first and second polishing selectivity modifiers, each containing 0.001% to 1% by weight of the slurry composition,
Polishing slurry composition.
The method of claim 1,
The pH of the polishing slurry composition is 1 to 7,
The polishing slurry composition has a zeta potential of +5 mV to +70 mV.
Polishing slurry composition.
The method of claim 1,
When polishing a substrate including a polishing target film and an oxide film using the polishing slurry composition, the selectivity of the polishing target film to the oxide film is 10 or more,
Polishing slurry composition.
The method of claim 1,
The polishing rate for the film to be polished is 1000 Å/min or more,
Polishing slurry composition.
delete The method of claim 13,
The oxide film is a silicon oxide film,
Polishing slurry composition.
The method of claim 1,
The polishing slurry composition is applied to a polishing process of a semiconductor device, a display device, or a wafer including both,
Polishing slurry composition.