KR101935965B1 - Slurry composition for ild chemical mechanical polishing process - Google Patents

Abstract

The present invention relates to a slurry composition for an ILD polishing process, wherein a slurry composition for an ILD polishing process according to an embodiment of the present invention comprises: an abrasive liquid comprising metal oxide abrasive particles dispersed positively; And an additive liquid comprising an amine compound containing at least one primary or secondary nitrogen element.

Description

TECHNICAL FIELD [0001] The present invention relates to a slurry composition for an ILD polishing process,

The present invention relates to a slurry composition for an ILD polishing process.

As the semiconductor devices are diversified and highly integrated, a finer pattern forming technique is used, thereby complicating the surface structure of the semiconductor device and increasing the step difference of the surface films. A chemical mechanical polishing (CMP) process is used as a planarization technique for removing a step in a specific film formed on a substrate in manufacturing a semiconductor device. For example, an interlayer dielectric (ILD), intermetallic dielectric (IMD), and chip-to-chip insulation are used as a process for removing an insulating film excessively formed for interlayer insulation of a semiconductor device. A process for planarization of an insulating film for shallow trench isolation (STI) and a process for forming a metal conductive film such as a wire, a contact plug, a via contact, and the like.

BACKGROUND ART [0002] An insulating film mainly used as an interlayer dielectric (ILD) of a semiconductor device or an intermetallic dielectric (IMD) of a metal interconnection acts as an electrically isolating layer between an adjacent semiconductor and a conductive path. The insulating film is often referred to as a shallow trench isolation structure or an interlayer insulating film in a semiconductor device, and examples thereof include tungsten nitride (WN), titanium nitride (TiN), and tantalum nitride (TaN). In the formation of such a structure, there is a problem related to the polishing of the insulating film to obtain a proper flatness quickly without occurrence of defects (e.g., dishing, scratch). As the size of semiconductor device structures continues to become smaller, performance standards that are allowed for defects in planarization and dielectric material polishing are becoming increasingly unacceptable. In addition, a so-called selective polishing characteristic is demanded in which the polishing rate of the oxide layer which is the insulating film is increased and the polishing rate of the tungsten nitride film which is the diffusion barrier is lowered. If the polishing selectivity ratio becomes too high, dishing may occur due to the oxidation of the oxide film, which may cause deterioration of the characteristics of the device. Particularly, such a dishing problem may cause a step difference between the active region and the field region in a device in which the trench is ultrafine, which may adversely affect the performance and reliability of the device.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to provide a polishing method and a polishing method which have a high polishing rate for an insulating film and a polishing with respect to a tungsten nitride film are suppressed to provide a polishing stop function and a high polishing selectivity, Thereby minimizing defects and preventing defects.

However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to one embodiment, an abrasive liquid comprising metal oxide abrasive particles dispersed positively; And an additive liquid comprising an amine compound comprising at least one primary or secondary nitrogen element.

According to one aspect, the at least one nitrogen may be at least three nitrogens.

According to one aspect, the amine compound is selected from the group consisting of diethylenetriamine (DETA), triethylenetetramine (TETA), tetraethylenepentamine (TEPA), pentaethylenehexamine (PEHA), bis (hexamethylene) N, N'-tris (3-aminopropyl) ethylenediamine (Am5), N, N'-bis (3-aminopropyl) ethylenediamine N, N'-tris (3-aminopropyl) -1,3-diaminopropane, N, Propyl) -1,3-diaminopropane, bis- (3-aminopropyl) amine, dipropylenetriamine, and tripropylenetetramine.

According to one aspect, the amine compound may be 1 ppm to 1,000 ppm of the slurry composition for the ILD polishing process.

According to one aspect of the present invention, there is provided a method for producing an aqueous solution containing a carboxylic acid, an amino acid, nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, bromic acid, At least one selected from the group consisting of acetic acid, acetic acid, adipic acid, oxalic acid, phthalic acid, tartaric acid, salicylic acid, citric acid, glutamic acid, glutaric acid, gluconic acid, formic acid, fumaric acid, propionic acid, benzoic acid, butyric acid, aspartic acid and lactic acid One or more acidic substances.

According to one aspect, it may further comprise a basic substance having a pKa value of 9 or more.

According to one aspect, the basic substance is selected from the group consisting of tetramethylammonium hydroxide, ammonium methylpropanol, arginine, propylamine, triethylamine, tributylamine, tetramethylamine, monoethanolamine, diethanolamine, triethanolamine, 2 Propanol, 1-amino-2-propanol, 1-dimethylamino-2-propanol, 3-dimethylamino- 1-propanol, 2-amino-1-propanol, 2-dimethylamino-1-propanol, - (dimethylamino) 2-propanol, N-methyldiethanolamine, N-propyldiethanolamine, N-isopropyldiethanolamine, N- (2- methylpropyl) diethanolamine, N-butyl-ethanolamine, N-cydecylhexyldiethanolamine, 2- (dimethylamino) ethanol, 2-diethylaminoethanol, Amino-2-pentanol, 2- [bis (2-hydroxyethyl) amino] -2-methyl- (2-hydroxyethyl) amino] -2-propanol, N, N-bis (2-hydroxypropyl) ethanolamine, 2- (Hydroxymethyl) aminomethane, and tri-isopropanolamine.

According to one aspect of the present invention, the metal oxide abrasive particles may be dispersed so that the abrasive particle surface has a positive charge.

According to one aspect of the present invention, the metal oxide abrasive particles comprise at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic or inorganic material, and a metal oxide in a colloidal state, , Ceria, zirconia, alumina, titania, barium titania, germania, manganese, and magnesia.

According to one aspect, the metal oxide abrasive particles may include 5 nm to 150 nm of primary particles, and 30 nm to 300 nm of secondary particles.

According to one aspect, the metal oxide abrasive particles may be 0.1 wt% to 10 wt% of the slurry composition for the ILD polishing process.

According to one aspect, the pH of the slurry composition for the ILD polishing process may be in the range of 2 to 6.

According to one aspect, the zeta potential of the slurry composition for the ILD polishing process may range from +5 mV to +70 mV.

According to one aspect, the polishing selection ratio of the insulating film: tungsten nitride film may be 100: 1 to 30,000: 1.

According to one aspect, in an interlayer dielectric (ILD) process of a semiconductor device, after the patterned wafer including the oxide film and the tungsten nitride film is polished, the amount of dishing may be less than 200 angstroms.

According to one aspect of the present invention, the polishing pad further includes water, and the ratio of the polishing liquid: water: additive liquid may be 1: 3 to 10: 1 to 8.

With the slurry composition for ILD polishing process of the present invention, a high polishing rate for an insulating film and a polishing inhibition for a tungsten nitride film are possible, and the polishing slurry can have a high selectivity. Further, when polishing the patterned wafer, it is possible to minimize the amount of dishing caused by the abrasion-suppressing function of the polishing film after exposure of the stop film, thereby preventing defects. The present invention can be applied to an interlayer dielectric (ILD) process of a semiconductor device, thereby making it possible to manufacture a semiconductor device having superior reliability and characteristics.

FIG. 1 is a schematic view of a pattern wafer preparation and testing method for carrying out a CMP process according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. Also, terminologies used herein are terms used to properly represent preferred embodiments of the present invention, which may vary depending on the user, intent of the operator, or custom in the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification. Like reference symbols in the drawings denote like elements.

Throughout the specification, when an element is referred to as " comprising ", it means that it can include other elements as well, without excluding other elements unless specifically stated otherwise.

Hereinafter, the slurry composition for ILD polishing process of the present invention will be specifically described with reference to examples and drawings. However, the present invention is not limited to these embodiments and drawings.

According to one embodiment, an abrasive liquid comprising metal oxide abrasive particles dispersed positively; And an additive liquid comprising an amine compound comprising at least one primary or secondary nitrogen element.

With the slurry composition for ILD polishing process of the present invention, a high polishing rate for an insulating film and a polishing inhibition for a tungsten nitride film are possible, and the polishing slurry can have a high selectivity. Further, when polishing the patterned wafer, it is possible to minimize the amount of dishing caused by the abrasion-suppressing function of the polishing film after exposure of the stop film, thereby preventing defects. The present invention can be applied to an interlayer dielectric (ILD) process of a semiconductor device, thereby making it possible to manufacture a semiconductor device having superior reliability and characteristics.

According to one aspect, the insulating layer may be any suitable silicon oxide material known in the art. For example, it is possible to use tetraethyl orthosilicate (TEOS), plasma enhanced tetraethyl orthosilicate (PETEOS), phosphor silicate glass (PSG), boron silicate glass boron silicate glass (BSG), borophosphosilicate glass (BPSG), thermal oxide and undoped silicate glass (USG), high density plasma oxide (HDG) HDP oxide).

According to one aspect, the tungsten nitride film may be any suitable tungsten nitride material known in the art. For example, a nitride having a composition of W ₂ N, WN ₂ , W ₂ N ₃ .

According to one aspect of the present invention, the metal oxide abrasive grains may be prepared by a solid phase method or a liquid phase method, and the surface of the abrasive grains is dispersed so as to have a positive charge. The solid phase method can be produced by calcining the abrasive particle precursor at a temperature of 400 ° C to 1,000 ° C. The liquid phase method is a method in which an abrasive particle precursor is chemically reacted in an aqueous solution, and a sol-gel method in which fine particles are obtained by growing crystals, a coprecipitation method in which abrasive particle ions are precipitated in an aqueous solution, A hydrothermal synthesis method such as a hydrothermal synthesis method.

According to one aspect of the present invention, the metal oxide abrasive particles comprise at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic or inorganic material, and a metal oxide in a colloidal state, , Ceria, zirconia, alumina, titania, barium titania, germania, manganese, and magnesia. For example, the metal oxide abrasive particles may be positively dispersed ceria. The positively dispersed ceria may be mixed with a positively activated additive liquid to realize a higher step removal performance and an automatic polishing stop function.

According to one aspect, the abrasive grains may comprise 5 nm to 150 nm of primary particles, and 30 nm to 300 nm of secondary particles. The measurement of the average particle diameter of the abrasive particles is an average value of the particle diameters of a plurality of particles within a visual range that can be measured by scanning electron microscopy or dynamic light scattering. The primary particle size should be 150 nm or less in order to secure uniformity of the particle. If the primary particle size is less than 5 nm, the polishing rate may be lowered. In the STI polishing slurry composition, If the size of the secondary particles is less than 30 nm, excessively small particles due to milling will result in deterioration of cleanability and excess defects on the surface of the wafer. If the particle size exceeds 300 nm, excessive polishing will occur, Difficulty, and possible dishing, erosion and surface defects.

According to one aspect, the metal oxide abrasive grains can use, in addition to the single size particles, mixed particles comprising a particle distribution in the form of a multi-dispersion, for example, abrasive grains having two different average grain sizes May be blended to have a bimodal particle distribution or abrasive grains having three different average grain sizes may be mixed to have a grain size distribution showing three peaks. Alternatively, abrasive grains having four or more different average grain sizes may be mixed to have a particle distribution of polydisperse type. The relatively large abrasive grains and the relatively small abrasive grains can be mixed to have better dispersibility and the effect of reducing the scratch on the tungsten surface can be expected.

According to one aspect, the metal oxide abrasive particles may be 0.1 wt% to 10 wt% of the slurry composition for the ILD polishing process. When the metal oxide abrasive grains are less than 1% by weight in the slurry composition for the ILD polishing process, there is a problem that the polishing rate is reduced. When the metal oxide abrasive grains are more than 10% by weight, the removal rate is too high, It is possible to generate surface defects by the residual particle adsorption property of the particles.

According to one aspect of the present invention, by adding the amine compound, it is possible to suppress the polishing of the tungsten nitride film in the interlayer insulating film (ILD) and to have the function of stopping the automatic polishing of the tungsten nitride film.

According to one aspect, the at least one nitrogen may be at least three nitrogens, and in particular according to one aspect, the amine compound is selected from the group consisting of diethylenetriamine (DETA), triethylenetetraamine (TETA) N, N'-bis (3-aminopropyl) ethylenediamine (Amine), N, N'-bis (3-aminopropyl) ethylenediamine (Am4), N, N'-bis (3-aminopropyl) ethylenediamine (Am5) ) -1,3-diaminopropane, N, N, N'-tris (3-aminopropyl) -1,3-diaminopropane, bis- (3-aminopropyl) amine, dipropylenetriamine and tripropylene Tetraamine, and tetraamine.

According to one aspect, the amine compound may be 1 ppm to 1,000 ppm of the slurry composition for the ILD polishing process. If the polymer having at least one cationic element has less than 1 ppm, the tungsten nitride film automatic polish stop function may not be realized. If it exceeds 1,000 ppm, the step removal performance is deteriorated and the polishing selectivity ratio of the convex portion and the concave portion May not be realized, and substrate surface defects may be increased.

According to one aspect of the present invention, there is provided a method for producing an aqueous solution containing a carboxylic acid, an amino acid, nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, bromic acid, At least one selected from the group consisting of acetic acid, acetic acid, adipic acid, oxalic acid, phthalic acid, tartaric acid, salicylic acid, citric acid, glutamic acid, glutaric acid, gluconic acid, formic acid, fumaric acid, propionic acid, benzoic acid, butyric acid, aspartic acid and lactic acid One or more acidic substances. The polyacrylic acid copolymer may be, for example, a polyacrylic acid-sulfonic acid copolymer, a polyacrylic acid-malonic acid copolymer, and a polyacrylic acid-polystyrene copolymer. acid-polystyrene copolymer).

According to one aspect, the acidic material may be 0.01% to 1% by weight of the slurry composition for the ILD polishing process. If the acidic substance is less than 0.01% by weight in the slurry composition for the ILD polishing process, there is a possibility that step-removing performance will not be realized. If the acidic substance is more than 1% by weight, the automatic polishing stop function is decreased.

According to one aspect, it may further comprise a basic substance having a pKa value of 9 or more.

According to one aspect, the basic substance is selected from the group consisting of tetramethylammonium hydroxide, ammonium methylpropanol, arginine, propylamine, triethylamine, tributylamine, tetramethylamine, monoethanolamine, diethanolamine, triethanolamine, 2 Propanol, 1-amino-2-propanol, 1-dimethylamino-2-propanol, 3-dimethylamino- 1-propanol, 2-amino-1-propanol, 2-dimethylamino-1-propanol, - (dimethylamino) 2-propanol, N-methyldiethanolamine, N-propyldiethanolamine, N-isopropyldiethanolamine, N- (2- methylpropyl) diethanolamine, N-butyl-ethanolamine, N-cydecylhexyldiethanolamine, 2- (dimethylamino) ethanol, 2-diethylaminoethanol, Amino-2-pentanol, 2- [bis (2-hydroxyethyl) amino] -2-methyl- (2-hydroxyethyl) amino] -2-propanol, N, N-bis (2-hydroxypropyl) ethanolamine, 2- (Hydroxymethyl) aminomethane, and tri-isopropanolamine.

According to one aspect, the basic material may be 0.01 wt% to 1 wt% of the slurry composition for the ILD polishing process. If the basic material is less than 0.01% by weight in the slurry composition for the ILD polishing process, the step removal performance may be deteriorated. If the basic material is more than 1% by weight, the automatic polishing stop function is decreased.

According to one aspect, the pH of the slurry composition for the ILD polishing process may be in the range of 2 to 6. If the pH is out of the above range, there is a problem that the dispersion stability sharply drops and aggregation occurs.

According to one aspect, the slurry composition for the ILD polishing process may comprise a concentration process and a dilution process in the manufacturing process. The slurry composition for the ILD polishing process may further comprise water. The water may include, for example, deionized water, ion exchange water, and ultrapure water. The ratio of the abrasive liquid: water: additive liquid may be 1: 3 to 10: 1 to 8. When the ratio of the additive liquid is in the range of 1 to 4, the smaller the proportion of the additive liquid is, the more suitable for use in bulk high-end polishing. When the additive liquid ratio is in the range of 5 to 8, The residual step can be effectively removed in the polishing process.

According to one aspect, the polishing liquid and the additive liquid may be prepared in a two-part form prepared separately and mixed immediately before polishing, or may be provided in a one-pack form in which a polishing liquid and an additive liquid are mixed.

According to one aspect, the zeta potential of the slurry composition for the ILD polishing process may range from +5 mV to +70 mV. Due to the positively charged metal oxide abrasive grains, high dispersion stability is maintained, and the agglomeration of the metal oxide abrasive grains does not occur, and the occurrence of micro-scratches can be reduced.

According to one aspect, the polishing selection ratio of the insulating film: tungsten nitride film may be 100: 1 to 30,000: 1. The removal rate of the insulating film may be from 2,000 A / min to 5,000 A / min, and the removal rate of the tungsten nitride film may be not more than 20 A / min, preferably not more than 10 A / min. The slurry composition for the ILD polishing process may contain an amine compound containing the amine compound to inhibit polishing on the surface of the tungsten nitride film, and thus may have a function of stopping the automatic polishing of the tungsten nitride film as the removal rate becomes significantly slower.

The slurry composition for an ILD polishing process according to one embodiment can suppress the polishing rate in the low-stage region and improve the polishing rate of the convex portion. When a trench is formed through an etch process to form a pattern on a flat surface and then an insulating film (for example, SiO ₂ ) is deposited on the trench, a difference in height between the grooved portion and the non- This height difference is called a step height. The step can be from 500 A to 10,000 A depending on the depth of the trench by the etching process. The high portion can be referred to as a convex portion (high-end difference region), and the low portion can be referred to as a concave portion (low-end difference region). And features a flat surface with such a step removed.

According to one aspect, in an interlayer dielectric (ILD) process of a semiconductor device, the amount of dishing may be less than 200 angstroms after polishing a patterned wafer including an oxide film and a tungsten nitride film. In the ILD process, it is possible to prevent the defects by reducing the amount of dishing, and to contribute to improvement of the performance or reliability of the semiconductor device. The amount of the dishing may be defined as the step difference between the polished insulating film and the tungsten nitride film after the polishing method is performed. The surface of the polished pattern wafer is scanned using a profiler (manufacturer: KLA Tencor, Model P10) , And atomic force microscope (AFM) analysis of a monitoring box, the profile of the insulating film and the tungsten nitride film can be measured and calculated. The present invention can be applied to various processes such as an intermetallic dielectric (IMD) of a metal wiring or a shallow trench isolation (STI) formation process of a semiconductor device as well as an interlayer insulating film process of a semiconductor device.

Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the following examples are for illustrative purposes only and are not intended to limit the scope of the present invention.

[ Example  One]

A polishing liquid containing 2.5 wt% of colloidal ceria abrasive grains having a particle size of 100 nm was prepared. Amino-2-methyl-1-propanol (AMP) as a basic substance was added in an amount of 0.001 wt% to adjust the pH to 4.5 And then mixed to prepare an additive liquid. The ratio of the polishing solution: ultrapure water: additive solution was 1: 6: 3 to prepare a slurry composition for an ILD polishing process.

[ Example  2]

A slurry composition for an ILD polishing process was prepared in the same manner as in Example 1 except that 250 ppm of an amine compound was added in Example 1.

[ Comparative Example ]

A slurry composition was prepared in the same manner as in Example 1, except that no amine compound was added.

The slurry composition for the ILD polishing process of Examples 1 and 2 and the slurry composition of the comparative example were polished under the following polishing conditions.

[Polishing condition]

1. Grinding machine: AP-300 (300 mm, manufactured by KCTECH)

2. Pad: IC-1000 (Rohm & Hass)

3. Polishing time: 60 sec (in the case of pattern wafers, residual line oxide film + 1,000 angstroms)

4. Platen RPM: 93

5. Spindle RPM: 87

6. Pressure: 3.5 psi

7. Flow rate: 175 ml / min (Slurry: DIW = 1: 6), 75 ml / min (additive)

8. Used wafers: PE-TEOS blanket wafers 20K Å,

Patterned wafer on which an oxide film and a tungsten nitride film are deposited 20K Å

(Trench depth 10K Å)

FIG. 1 is a schematic view of a pattern wafer preparation and testing method for carrying out a CMP process according to an embodiment of the present invention. Referring to FIG. 1, the polishing rate of the tungsten nitride film and the thickness of the remaining oxide film are measured, and the dishing is a profile measurement using a profiler. Table 1 below shows the polishing rate of the oxide film of the blanket wafer, the polishing rate of the tungsten nitride film of the patterned wafer, the remaining oxide film, the center, the center, and the edge dishing by using the slurry composition for the ILD polishing process and the comparative example of Examples 1 and 2 .

division Blanket
wafer The patterned wafer (100 占 퐉 占 100 占 퐉) Oxide film
Polishing rate
(Å / min) nitrification
tungsten
Polishing rate
(Å / min) residual
Oxide film
(A) Dishing (Å) center
(center) center
(middle) edge
(edge) Average Comparative Example 2,912 27 780 271 198 157 209 Example 1 3,039 8 791 226 197 111 178 Example 2 2,853 0.1 772 199 163 129 164

It can be seen that when the slurry composition for ILD polishing process of Examples 1 and 2 is used, the polishing selectivity ratio between the removal rate of the tungsten nitride film step and the polishing rate on the flat wafer in the patterned wafer having the convex portion and the concave portion is high. As a result, it can be seen that the convex portion in the pattern has a high polishing speed, and the concave portion has an enhanced polishing stop function, thereby remarkably improving the step difference removing performance. Dishing Occurrence It can be confirmed that the slurry composition for ILD polishing process of Examples 1 and 2 was 200 Å or less on average.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.

Claims (16)

An abrasive liquid containing metal oxide abrasive particles dispersed positively; And
An additive liquid comprising an amine compound containing at least three primary or secondary nitrogen elements;
/ RTI >
Insulating film: a polishing selectivity ratio of the tungsten nitride film is 100: 1 to 30,000: 1,
The amine compound is selected from the group consisting of diethylenetriamine (DETA), triethylenetetramine (TETA), tetraethylenepentamine (TEPA), pentaethylenehexamine (PEHA), bis (hexamethylene) Aminopropyl) ethylenediamine (Am3), N, N'-bis (3-aminopropyl) ethylenediamine (Am4), N, -Aminopropyl-1,3-diaminopropane, N, N'-bis (3-aminopropyl) -1,3-diaminopropane, N, N, At least one selected from the group consisting of 3-diaminopropane, bis- (3-aminopropyl) amine, dipropylenetriamine, and tripropylenetetramine,
The metal oxide abrasive grains are dispersed so that the surfaces of the abrasive grains have a positive charge,
Wherein the zeta potential is in the range of +5 mV to +70 mV.
A slurry composition for an ILD polishing process.
delete delete The method according to claim 1,
Wherein the amine compound is 1 ppm to 1,000 ppm of the slurry composition for the ILD polishing process.
The method according to claim 1,
And examples thereof include carboxylic acids, amino acids, nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, bromic acid, iodic acid, picolinic acid, pimelic acid, polyacrylic acid, polyacrylic acid copolymer, polysulfonic acid, malic acid, malonic acid, At least one acidic substance selected from the group consisting of dicarboxylic acid, dicarboxylic acid, dicarboxylic acid, dicarboxylic acid, dicarboxylic acid, dicarboxylic acid, dicarboxylic acid, dicarboxylic acid, dicarboxylic acid, dicarboxylic acid, dicarboxylic acid, ≪ / RTI > further comprising a slurry composition.
The method according to claim 1,
and a basic substance having a pKa value of not less than 9. The slurry composition for an ILD polishing process according to claim 1,
The method according to claim 6,
The basic substance is selected from the group consisting of tetramethylammonium hydroxide, ammonium methylpropanol, arginine, propylamine, triethylamine, tributylamine, tetramethylamine, monoethanolamine, diethanolamine, triethanolamine, Amino-2-propanol, 1-dimethylamino-2-propanol, 3-dimethylamino-1-propanol, 2- 1-propanol, 2-ethylamino-1-ethanol, 2-ethylamino-1-ethanol, 1- (dimethylamino) N-methyldiethanolamine, N-methyldiethanolamine, N-isopropyldiethanolamine, N- (2-methylpropyl) diethanolamine, N-butyldiethanolamine, Nt- , N-cyanohexyldiethanolamine, 2- (dimethylamino) ethanol, 2-diethylaminoethanol, 2-dipropylaminoethanol, 2-amino-2-pentanol, 2- [bis (2-hydroxyethyl) amino] -2-methyl-1-propanol, 2-t-butylaminoethanol, (2-hydroxyethyl) amino] -2-propanol, N, N-bis (2-hydroxypropyl) ethanolamine, Aminomethane, and triisopropanolamine. ≪ RTI ID = 0.0 > 21. < / RTI >
delete The method according to claim 1,
The metal oxide abrasive grains may be,
At least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic or inorganic material, and a metal oxide in a colloidal state,
Wherein the metal oxide comprises at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, manganese and magnesia.
The method according to claim 1,
Wherein the metal oxide abrasive particles comprise primary particles of 5 nm to 150 nm and secondary particles of 30 nm to 300 nm.
The method according to claim 1,
Wherein the metal oxide abrasive grains are 0.1 wt% to 10 wt% of the slurry composition for the ILD polishing process.
The method according to claim 1,
Wherein the pH of the slurry composition for the ILD polishing process is in the range of 2 to 6.
delete delete The method according to claim 1,
A slurry composition for an ILD polishing process wherein the amount of dishing generated is less than or equal to 200 angstroms after polishing a patterned wafer comprising an oxide film and a tungsten nitride film in an interlayer dielectric (ILD) process of a semiconductor device.
The method according to claim 1,
Water;
Wherein the weight ratio of the abrasive liquid: water: additive liquid is 1: 3 to 10: 1 to 8.

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