KR101737943B1 - Multi-function polishing slurry composition - Google Patents
Multi-function polishing slurry composition Download PDFInfo
- Publication number
- KR101737943B1 KR101737943B1 KR1020150186176A KR20150186176A KR101737943B1 KR 101737943 B1 KR101737943 B1 KR 101737943B1 KR 1020150186176 A KR1020150186176 A KR 1020150186176A KR 20150186176 A KR20150186176 A KR 20150186176A KR 101737943 B1 KR101737943 B1 KR 101737943B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- poly
- chloride
- film
- nitride film
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
Description
The present invention relates to a slurry composition for nitriding film polishing.
As the semiconductor devices are diversified and highly integrated, a finer pattern forming technique is used, thereby complicating the surface structure of the semiconductor device and increasing the step difference of the surface films. A chemical mechanical polishing (CMP) process is used as a planarization technique for removing a step in a specific film formed on a substrate in manufacturing a semiconductor device. In the chemical mechanical polishing step, a wafer to be subjected to a planarization process is placed on a rotating plate, a surface of the wafer is brought into contact with a pad of a polishing machine, and a polishing process is performed by rotating the pads of the rotating plate and the polishing machine . That is, the slurry composition flows between the wafer surface and the pads, and the surface of the wafer is polished by the mechanical friction caused by the abrasive particles in the slurry composition and the surface protrusions of the pad, and the chemical components in the slurry composition are chemically Removal is done. The polishing efficiency of the chemical mechanical polishing process is determined by the chemical mechanical polishing equipment, the composition of the slurry composition, the type of polishing pad, and the like. In particular, the composition of the slurry composition has an important influence on the polishing efficiency. The polishing rate of the film may be varied according to the properties of the slurry composition having the same composition and the degree of polishing of the film can be controlled by using the difference in polishing rate. In particular, a chemical mechanical polishing process is often performed by a difference in polishing rate between an oxide film, a nitride film, or a polysilicon film widely used in a semiconductor device. Among these slurry compositions, a slurry composition for simultaneously polishing an oxide film, a nitride film, and a polysilicon film has been used. However, the slurry composition for simultaneously polishing the oxide film, the nitride film and the polysilicon film has a problem that dishing and erosion are generated at the time of device separation due to lack of polishing stop function, and as a result, the oxide film, the nitride film and the polysilicon film are selectively There is a demand for a slurry composition for chemical mechanical polishing that can be polished.
An object of the present invention is to provide a slurry composition for polishing a nitride film having a high polishing rate for a nitride film and a polishing stop function for an oxide film and a polysilicon film.
However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.
According to the present invention, a cationic polymer; Amphoteric compounds; Nonionic polymers; And abrasive grains. The present invention also provides a slurry composition for polishing a nitride film.
The cationic polymer may comprise two or more ionized cations in the molecular formula.
The cationic polymer may comprise two or more of the cations activated by nitrogen.
The cationic polymer may have a viscosity of 20 cp to 40 cp.
The cationic polymer may be in quaternary ammonium form.
The cationic polymer may be selected from the group consisting of poly (diallyldimethyl ammonium chloride), poly [bis (2-chloroethyl) ether-alt-1,3-bis [3- (dimethylamino) N, N ', N', N'-bis (2-chloroethyl) ether-alt-1,3-bis [3- (dimethylamino) propyl] urea] 2,2 ', 2''-nitrilotris-, polymer with 1,4-diamine having tetramethyl-2-butene-1,4-diamine, dichloro-2-butene and N, N ', N'-tetramethyl-2-butene-1,4-diamine; hydroxyethylcellulose dimethyl diallylammonium chloride copolymer; Acrylamide / diallyldimethylammonium chloride; acrylamide / diallyldimethylammonium chloride; copolymers of acrylamide and quaternized dimethylammonium (meth) acrylate; acrylic acid / diallyldimethylammonium chloride; acrylamide / dimethylaminoethyl methacrylate methyl chloride copolymer; acrylic acid / diallyldimethylammonium chloride copolymer; acrylamide / dimethylaminoethyl methacrylate methyl chloride copolymer; Quaternized hydroxyethyl cellulose, vinylpyrrolidone / quaternized dimethylaminoethyl methacrylate copolymer (Copolymer of vinylpyrrolidone and quaternized dimethylaminoethyl methacrylate); Copolymers of vinylpyrrolidone / quaternized vinylimidazole; copolymers of vinylpyrrolidone and quaternized vinylimidazole; Vinylpyrrolidone / methacrylamidopropyl trimethylammonium copolymer (Copolymer of vinylpyrrolidone and methacrylamidopropyl trimethylammonium); Poly (2-methacryloxyethyltrimethylammonium chloride); poly (2-methacryloxyethyl) trimethylammonium chloride; Poly (acrylamide 2-methacryloxyethyltrimethyl ammonium chloride), poly [2- (dimethylamino) ethyl methacrylate) methyl chloride] (poly [2- (dimethylaminoethyl methacrylate methyl poly [3-methacrylamidopropyl trimethylammonium chloride], poly [3-acrylamidopropyl trimethylammonium chloride], poly [3-methacrylamidopropyl trimethylammonium chloride] Poly (ethyleneimine) ethylene (dimethylimino) ethylene dichloride], poly (ethyleneimine) ethylene (dimethylimino) ethylene dichloride], acrylic acid / acrylamide / diallyldimethylammonium chloride terpolymer of acrylic acid, acrylamide and diallyldimethylammonium Chloride); acrylic acid / methacrylamidopropyltrimethylammonium chloride / methyl Vinylpyrrolidone, and quaternized vinylimidazole), vinylpyrrolidone / vinylpyrrolidone / vinylpyrrolidone / quaternized vinylimidazole, polyvinylpyrrolidone / quaternized vinylimidazole, terpolymer of acrylic acid, 2-methacryloxyethyl phosphorylcholine-co-n-butyl methacrylate); poly [(dimethylamino) ethyl acrylate benzyl chloride quaternary salt] (PDMAEA BCQ) and poly [(dimethylamino) ethyl acrylate methyl chloride quaternary salt] (PDMAEA MCQ).
The amphoteric compound may have a pKa1 value of 1 to 3 and a pKa2 value of 8 to 12.
Wherein the amphoteric compound is selected from the group consisting of glycine, alanine, serine, phenylalanine, threonine, valine, leucine, isoleucine, proline, histidine, lysine, arginine, aspartic acid, tryptophan, glutamine, betaine, cocodimopropylbetaine, Phosphorus, and phosphorus.
The ampholytic compound / cationic polymer weight fraction may be from 50 to 200.
The slurry composition for nitride film polishing is characterized in that the polishing selectivity ratio of the nitride film to the oxide film is from 4 to 200 and the polishing selectivity of the nitride film to the polysilicon film is from 7 to 80 when the ampholytic / cationic polymer weight fraction is 50 to 200 Lt; / RTI >
The nonionic polymer may be at least one selected from the group consisting of polyethylene glycol, polypropylene glycol, polyvinyl pyrrolidone, polyoxyalkylene alkyl ether, polyoxyalkylene alkyl ester, polyoxyethylene methyl ether, polyethylene glycol sulfonic acid, polyvinyl alcohol, polyethylene oxide , Polypropylene oxide, polyalkyl oxide, polyoxyethylene oxide, polyethylene oxide-propylene oxide copolymer, cellulose, methylcellulose, methylhydroxyethylcellulose, methylhydroxypropylcellulose, hydroxyethylcellulose, carboxymethylcellulose, carboxymethylcellulose Hydroxypropylmethylcellulose, hydroxyethylcellulose, sulfoethylcellulose, and carboxymethylsulfoethylcellulose.
The nonionic polymer may be 0.001 wt% to 5 wt% of the slurry composition for polishing a nitride film.
Wherein the abrasive particles comprise at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic substance or an inorganic substance, and the metal oxide in a colloidal state, and the metal oxide is at least one selected from the group consisting of silica, ceria, zirconia, alumina, At least one selected from the group consisting of titania, barium titania, germania, manganese, and magnesia.
The abrasive grains may be 0.5 wt% to 10 wt% of the slurry composition for polishing a nitride film.
The slurry composition for nitride film polishing may be one in which a nitride film is polished with an oxide film and a polysilicon film as a polishing stop film.
The pH of the slurry composition for polishing a nitride film may be 4 to 6.
The slurry composition for nitride film polishing according to the present invention exhibits a high polishing rate for a nitride film and at the same time has a polishing stopping function in an oxide film and a polysilicon film. When the chemical mechanical polishing process is performed, Can achieve a high polishing selectivity. Therefore, the erosion and dishing phenomenon that have occurred in the upper portion of the wafer during the polishing process can be minimized, so that a reliable semiconductor memory device can be manufactured.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. In addition, terms used in this specification are terms used to appropriately express the preferred embodiments of the present invention, which may vary depending on the user, the intention of the operator, or the practice of the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification. Like reference symbols in the drawings denote like elements.
Throughout the specification, when an element is referred to as "comprising ", it means that it can include other elements as well, without excluding other elements unless specifically stated otherwise.
Hereinafter, the nitride film polishing slurry composition of the present invention will be specifically described with reference to examples and drawings. However, the present invention is not limited to these embodiments and drawings.
According to the present invention, a cationic polymer; Amphoteric compounds; Nonionic polymers; And abrasive grains. The present invention also provides a slurry composition for polishing a nitride film.
INDUSTRIAL APPLICABILITY The slurry composition for nitride film polishing of the present invention exhibits a high polishing rate for a nitride film and at the same time has a polishing stop function in an oxide film and a polysilicon film. When performing a chemical mechanical polishing process, the oxide film and the polysilicon film are used as a polishing stopper film So that the nitride film can be effectively polished. Therefore, the nitride film can realize a high polishing selectivity ratio for each of the oxide film and the polysilicon film.
The cationic polymer may include two or more ionized cations in the molecular formula, and may include two or more cations activated by nitrogen. Thus, the viscosity of the cationic polymer can be controlled. The cationic polymer may have a viscosity of 20 cp to 40 cp. The polishing rate of the nitride film can be controlled by controlling the viscosity of the cationic polymer, and the polishing selectivity of the nitride film to the oxide film can be controlled by adjusting the oxide film polishing rate.
The cationic polymer may have a weight average molecular weight of 100,000 or less. If the weight average molecular weight of the cationic polymer is too low, it is difficult to obtain a sufficient polishing rate when polishing the oxide film or the nitride film and the planarization effect becomes insufficient. When the weight average molecular weight exceeds 100,000, coagulation phenomenon occurs, And the storage stability of the polishing slurry composition may be deteriorated.
The cationic polymer may be in quaternary ammonium form. The cationic polymer can be, for example, poly (diallyldimethyl ammonium chloride), poly [bis (2-chloroethyl) ether-alt-1,3-bis [3- ) Propyl] urea] (Poly [bis (2-chloroethyl) ether-alt-1,3-bis [3- (dimethylamino) propyl] urea]); 1,4- 2,2 ', 2''-nitrilotris-, polymer with (N'-tetramethyl-2-butene-1,4-diamine) 1,4-dichloro-2-butene and N, N, N ', N'-tetramethyl-2-butene-1,4-diamine; hydroxyethylcellulose dimethyldiallylammonium chloride copolymer diallylammonium chloride copolymer; acrylamide / diallyldimethylammonium chloride; acrylamide / quaternized dimethylammonium ethyl methacrylate (Copolymer of acrylamide and quaternized dimethacrylate) acrylic acid / diallyldimethylammonium chloride; acrylamide / dimethylaminoethyl methacrylate methyl chloride copolymer; acrylamide / dimethylaminoethyl methacrylate copolymer; acrylic acid / diallyldimethylammonium chloride; acrylamide / dimethylaminoethyl methacrylate methyl chloride copolymer; Quaternized hydroxyethyl cellulose, vinylpyrrolidone / quaternized dimethylaminoethyl methacrylate copolymer (Copolymer of vinylpyrrolidone and quaternized dimethylaminoethyl methacrylate); Copolymers of vinylpyrrolidone / quaternized vinylimidazole; copolymers of vinylpyrrolidone and quaternized vinylimidazole; Vinylpyrrolidone / methacrylamidopropyl trimethylammonium copolymer (Copolymer of vinylpyrrolidone and methacrylamidopropyl trimethylammonium); Poly (2-methacryloxyethyltrimethylammonium chloride); poly (2-methacryloxyethyl) trimethylammonium chloride; Poly (acrylamide 2-methacryloxyethyltrimethyl ammonium chloride), poly [2- (dimethylamino) ethyl methacrylate) methyl chloride] (poly [2- (dimethylaminoethyl methacrylate methyl poly [3-methacrylamidopropyl trimethylammonium chloride], poly [3-acrylamidopropyl trimethylammonium chloride], poly [3-methacrylamidopropyl trimethylammonium chloride] Poly (ethyleneimine) ethylene (dimethylimino) ethylene dichloride], poly (ethyleneimine) ethylene (dimethylimino) ethylene dichloride], acrylic acid / acrylamide / diallyldimethylammonium chloride terpolymer of acrylic acid, acrylamide and diallyldimethylammonium Chloride); acrylic acid / methacrylamidopropyltrimethylammonium chloride / methyl Vinylpyrrolidone, and quaternized vinylimidazole), vinylpyrrolidone / vinylpyrrolidone / vinylpyrrolidone / quaternized vinylimidazole, polyvinylpyrrolidone / quaternized vinylimidazole, terpolymer of acrylic acid, 2-methacryloxyethyl phosphorylcholine-co-n-butyl methacrylate); poly [(dimethylamino) ethyl acrylate benzyl chloride quaternary salt] (PDMAEA BCQ) and poly [(dimethylamino) ethyl acrylate methyl chloride quaternary salt] (PDMAEA MCQ).
The amphoteric compound means a compound that acts as a base for an acidic substance and acts as an acid for a basic substance. In the present invention, an amphoteric compound may include an amino acid having an amphoteric charge. An amino acid has both a carboxyl group (-COOH) showing acidity and an amino group (-NH 2 ) showing basicity in one molecule at the same time. When dissolved in water, amino acids are called amphoteric compounds because they act as acids or bases depending on pH. (Base) accept a proton (H +) in the molecular structure depending on the pH of the solution cation (-NH 2 + H + >>> -NH 3+) and one (acid) emitting a proton (H +) anion (-COOH >>> - COO - + H + ), so that positive ions are formed.
The amphoteric compound may have a pKa1 value of 1 to 3 and a pKa2 value of 8 to 12. Amino acids show a stepwise ionization reaction depending on the pH of the solution, because the pKa values of the carboxyl group, amino group and side chain constituting the amino acid are different. The pKa value means the pH at which each functional group constituting the amino acid becomes an equilibrium state (50% is an ion state). For example, in the case of glycine, the pKa1 value of the carboxyl group constituting glycine is 2.35, Lt; RTI ID = 0.0 > pKa2 < / RTI > This means that at pH 2.35, 50% of the carboxyl groups are present as anions (-COO-) and the remainder are as carboxyl groups (-COOH), and at pH 9.78, 50% of the glycine amino groups are cations (-NH 3+ ) 2 ). ≪ / RTI >
The ampholytic compound can adjust the adsorption degree of the cationic polymer on the surface of the oxide film, the nitride film and the polysilicon film to control the degree of adsorption of the polishing film, and in particular, the function of increasing the polishing rate of the nitride film can be realized. Accordingly, at the time of performing the polishing process, the selection ratio can be realized by controlling the phenomenon that the film quality is polished. In addition, the amphoteric compound is adsorbed on the surface of abrasive grains to prevent the abrasive grains from aggregating together. Thus, the dispersion stability of the slurry composition for polishing a nitride film according to the present invention can be improved.
Wherein the amphoteric compound is selected from the group consisting of glycine, alanine, serine, phenylalanine, threonine, valine, leucine, isoleucine, proline, histidine, lysine, arginine, aspartic acid, tryptophan, glutamine, betaine, cocodimopropylbetaine, Phosphorus, and phosphorus.
The ampholytic compound / cationic polymer weight fraction may be from 50 to 200. If the ampholytic compound / cationic polymer weight fraction is less than 50, the desired polishing selectivity can not be obtained due to the low polishing rate for the oxide film, the nitride film and the polysilicon film. If the weight ratio is less than 200, selective polishing of the oxide film, Performance may not appear. It is preferable that the ampholytic compound / cationic polymer weight fraction does not exceed 200 in terms of surface uniformity after polishing of the polysilicon film. By adjusting the weight fraction of the amphoteric compound / cationic polymer, a high selectivity to an oxide film, a nitride film, and a polysilicon film can be realized, and the polishing rate and surface planarization can also be improved.
The nonionic polymer is added in order to realize a polishing stop function for the oxide film and the polysilicon film. The nonionic polymer forms a passivation layer on the surface of the oxide film and the polysilicon film in the polishing process, Thereby preventing direct contact with the oxide film and the polysilicon film, and making the polishing rate for the oxide film and the polysilicon film considerably slow.
The nonionic polymer may be, for example, polyethylene glycol, polypropylene glycol, polyvinyl pyrrolidone, polyoxyalkylene alkyl ether, polyoxyalkylene alkyl ester, polyoxyethylene methyl ether, polyethylene glycol sulfonic acid, polyvinyl There may be used an alcohol, a polyethylene oxide, a polypropylene oxide, a polyalkyl oxide, a polyoxyethylene oxide, a polyethylene oxide-propylene oxide copolymer, a cellulose, a methylcellulose, a methylhydroxyethylcellulose, a methylhydroxypropylcellulose, a hydroxyethylcellulose, Cellulose, carboxymethyl hydroxyethyl cellulose, sulfoethyl cellulose, and carboxymethyl sulfoethyl cellulose.
The nonionic polymer may be 0.001 wt% to 5 wt% of the slurry composition for polishing a nitride film. When the nonionic polymer is less than 0.001 wt% of the slurry composition for polishing a nitride film, the protective function against the oxide film and the polysilicon film is deteriorated and the oxide film and the polysilicon film are excessively polished to fail to exhibit the polishing stop function. Due to the hydrophobicity of the nonionic polymer, contamination such as reattachment of particles after polishing may occur, and dispersion stability may be deteriorated and micro-scratch may occur.
Wherein the abrasive particles comprise at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic substance or an inorganic substance, and the metal oxide in a colloidal state, and the metal oxide is at least one selected from the group consisting of silica, ceria, zirconia, alumina, At least one selected from the group consisting of titania, barium titania, germania, manganese, and magnesia.
The abrasive grains may be 0.5 wt% to 10 wt% of the slurry composition for polishing a nitride film. If the abrasive grains are less than 0.5% by weight, the polishing rate may be lowered. If the abrasive grains are more than 10% by weight, defects may be caused by abrasive grains.
And the average particle size of the abrasive grains is 10 nm to 300 nm. When the abrasive grains are less than 10 nm, the abrasion rate of the abrasive grains is decreased, and selection failure is difficult. When the abrasive grains are more than 300 nm, it is difficult to control the surface defects, There can be a problem.
The abrasive grains may include those prepared by a liquid phase method, but are not limited thereto. The liquid phase method includes a sol-gel method in which abrasive particle precursors are chemically reacted in an aqueous solution to obtain fine particles by growing crystals, coprecipitation method in which abrasive particle ions are precipitated in an aqueous solution, and hydrothermal fluids Synthetic methods, and the like. The abrasive grains produced by the liquid phase method are dispersed so that the surfaces of the abrasive grains have a positive charge.
The abrasive grains may be monocrystalline, but are not limited thereto. When monocrystalline abrasive grains are used, the scratch reduction effect can be achieved compared to the polycrystalline abrasive grains, the dishing can be improved, and the cleaning ability after polishing can be improved.
The shape of the abrasive grains may be at least one selected from the group consisting of spherical, angular, needle-like, and plate-like shapes, and may be spherical.
Wherein the polishing selectivity ratio of the nitride film to the oxide film is from 4 to 200 when the ampholytic compound / cationic polymer weight fraction is 50 to 200, and the polishing selectivity ratio of the nitride film to the polysilicon film is 7 to < RTI ID = 80 < / RTI > The slurry composition for polishing a nitride film exhibits high-speed polishing performance against an oxide film and a polysilicon film with respect to a nitride film when the ampholytic compound / cationic polymer weight fraction is high, and when the ampholytic compound / cationic polymer weight fraction is low, A high selectivity ratio can be realized in the nitride film and the polysilicon film.
The pH of the slurry composition for polishing a nitride film may be 4 to 6. The polishing rate, the high selectivity and the dishing suppressing function can be improved in the above pH range. Enhancement of the cation by the pH control shows the effect of increasing the nitriding rate, and it is possible to reduce the polishing rate of the oxide film by adjusting the oxide film removal rate by selective adsorption.
The slurry composition for polishing a nitride film is used to polish a nitride film using an oxide film and a polysilicon film as a polishing stopper film. The oxide film is formed of, for example, tetra ethyl ortho silicate (TEOS), plasma enhanced-TEOS phosphorus silicate glass, boron silicate glass (BSG), boron phosphorus silicate glass (BPSG), polysilazane, undoped-silicate glass (USG), and high density plasma (HDP) And may include at least any one of them.
The slurry composition for nitride film polishing according to the present invention can secure a polishing performance of not less than 400 A / min to 2,000 A / min, preferably not less than 1,500 A / min even in a nitride film having a high hardness, as compared with a conventional polishing slurry composition . And a polishing rate of 10 A / min to 200 A / min for the oxide film and the polysilicon film. At this time, the nitride film exhibits a polishing selectivity of not less than 4: 1, preferably not less than 10: 1, for the oxide film and the polysilicon film.
In the present invention, by polishing the oxide film and the polysilicon film with the nitride film using the polishing stopper film, the erosion and dishing phenomenon that have occurred in the upper part of the wafer during the polishing process can be minimized, and therefore a reliable semiconductor memory device can be manufactured.
Hereinafter, the present invention will be described in detail with reference to the following examples and comparative examples. However, the technical idea of the present invention is not limited or limited thereto.
[Example 1]
0.01 wt% of poly [bis (2-chloroethyl) ether-alt-1,3-bis [3- (dimethylamino) propyl] urea] as a cationic polymer, 0.5 wt% of serine as an amphoteric compound, 0.5% by weight of polyethylene glycol was added as a polymer, and the mixture was stirred for 1 hour to prepare an aqueous dispersion solution. The colloidal ceria abrasive grains were added to the prepared dispersion aqueous solution in an amount of 3% based on the total weight, and stirred. Stirring was continued for 1 hour to sufficiently wet the slurry, followed by shaking using a vertical milling machine to stabilize the dispersion to prepare a slurry composition for nitriding polishing at pH 5.
[Example 2]
A slurry composition for polishing a nitride film was prepared under the same conditions as in Example 1, except that polyvinylpyrrolidone was added as a nonionic polymer.
[Example 3]
A slurry composition for nitriding film polishing was prepared under the same conditions as in Example 1, except that a polyoxyalkylene alkyl ether was added as the nonionic polymer.
[Example 4]
A slurry composition for nitriding film polishing was prepared under the same conditions as in Example 1 except that a polyoxyalkylene alkyl ester was added as a nonionic polymer.
[Example 5]
A slurry composition for nitriding film polishing was prepared under the same conditions as in Example 1, except that polyoxyethylene methyl ether was added as the nonionic polymer.
[Example 6]
A slurry composition for nitriding film polishing was prepared under the same conditions as in Example 1 except that polyethylene glycol sulfonic acid was added as a nonionic polymer.
[Example 7]
A slurry composition for nitriding film polishing was prepared under the same conditions as in Example 1, except that polyvinyl alcohol was added as a nonionic polymer.
[Comparative Example]
A slurry composition for nitriding film polishing was prepared under the same conditions as in Example 1, except that no non-ionic polymer was added.
Using the polishing slurry compositions of Examples 1 to 7 and Comparative Examples of the present invention, the wafers were polished under the following polishing conditions.
[Polishing condition]
1. Polishing equipment: UNIPLA 231
2. Platen speed: 90 rpm
3. Spindle speed: 24 rpm
4. Wafer pressure: 4 psi
5. Flow rate: 250 cc / min
7. Pad: IC1000 (K7)
8. Wafer: TEOS 20,000 A
Nitride 2,500 Å
Poly Si 5,000 Å
Table 1 shows the polishing rate of each of the polishing slurry compositions, TEOS, nitride film, and polysilicon film of Examples 1 to 7 and Comparative Examples of the present invention.
polymer
compound
polymer
Silicon film
Alkyl ether
Alkyl ester
Methyl ether
Sulfonic acid
Table 2 shows the oxide / nitride film selection ratio and the polishing selectivity of the nitride film / polysilicon film in Examples 1 to 7 and Comparative Examples of the present invention.
Abrasive selection ratio
Abrasive selection ratio
Referring to Table 2, in the comparative example, it is found that the selectivity of the oxide / nitride film selection ratio and the selectivity ratio of the nitride film / polysilicon film to the nitride film / polysilicon film is less than 1, and the oxide film, the nitride film, and the polysilicon film are uniformly polished to almost the same level. However, in Examples 1 to 7 of the present invention, it is confirmed that the polishing selectivity of the oxide film, the nitride film and the polysilicon film is controlled depending on the kind of the nonionic polymer material, and it is found that a high polishing selectivity of 4 or more is ensured.
While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be determined by the equivalents of the appended claims, as well as the appended claims.
Claims (16)
Amphoteric compounds;
Nonionic polymers; And
Abrasive particles;
Lt; / RTI >
The polishing selectivity ratio of the nitride film to the oxide film is 4 to 200 and the polishing selectivity ratio of the nitride film to the polysilicon film is 7 to 80 when the ampholytic compound / cationic polymer weight fraction is 50 to 200,
Wherein the oxide film and the polysilicon film are polished with a polishing stop film,
A slurry composition for polishing a nitride film.
Wherein the cationic polymer comprises two or more ionized cations in the molecular formula.
Wherein the cationic polymer comprises two or more cations activated by nitrogen.
Wherein the cationic polymer has a viscosity of 20 cp to 40 cp.
Wherein the cationic polymer is in quaternary ammonium form.
The cationic polymer may be selected from the group consisting of poly (diallyldimethyl ammonium chloride), poly [bis (2-chloroethyl) ether-alt-1,3-bis [3- (dimethylamino) N, N ', N', N'-bis (2-chloroethyl) ether-alt-1,3-bis [3- (dimethylamino) propyl] urea] 2,2 ', 2''-nitrilotris-, polymer with 1,4-diamine having tetramethyl-2-butene-1,4-diamine, dichloro-2-butene and N, N ', N'-tetramethyl-2-butene-1,4-diamine; hydroxyethylcellulose dimethyl diallylammonium chloride copolymer; Acrylamide / diallyldimethylammonium chloride; acrylamide / diallyldimethylammonium chloride; copolymers of acrylamide and quaternized dimethylammonium (meth) acrylate; acrylic acid / diallyldimethylammonium chloride; acrylamide / dimethylaminoethyl methacrylate methyl chloride copolymer; acrylic acid / diallyldimethylammonium chloride copolymer; acrylamide / dimethylaminoethyl methacrylate methyl chloride copolymer; Quaternized hydroxyethyl cellulose, vinylpyrrolidone / quaternized dimethylaminoethyl methacrylate copolymer (Copolymer of vinylpyrrolidone and quaternized dimethylaminoethyl methacrylate); Copolymers of vinylpyrrolidone / quaternized vinylimidazole; copolymers of vinylpyrrolidone and quaternized vinylimidazole; Vinylpyrrolidone / methacrylamidopropyl trimethylammonium copolymer (Copolymer of vinylpyrrolidone and methacrylamidopropyl trimethylammonium); Poly (2-methacryloxyethyltrimethylammonium chloride); poly (2-methacryloxyethyl) trimethylammonium chloride; Poly (acrylamide 2-methacryloxyethyltrimethyl ammonium chloride), poly [2- (dimethylamino) ethyl methacrylate) methyl chloride] (poly [2- (dimethylaminoethyl methacrylate methyl poly [3-methacrylamidopropyl trimethylammonium chloride], poly [3-methacrylamidopropyl trimethylammonium chloride], poly [3-methacrylamidopropyl trimethylammonium chloride] Poly (ethyleneimine) ethylene (dimethylimino) ethylene dichloride], poly (ethyleneimine) ethylene (dimethylimino) ethylene dichloride], acrylic acid / acrylamide / diallyldimethylammonium chloride terpolymer of acrylic acid, acrylamide and diallyldimethylammonium Chloride); acrylic acid / methacrylamidopropyltrimethylammonium chloride / methyl Vinylpyrrolidone, and quaternized vinylimidazole), vinylpyrrolidone / vinylpyrrolidone / vinylpyrrolidone / quaternized vinylimidazole, polyvinylpyrrolidone / quaternized vinylimidazole, terpolymer of acrylic acid, 2-methacryloxyethyl phosphorylcholine-co-n-butyl methacrylate); poly [(dimethylamino) ethyl acrylate benzyl chloride quaternary salt] (PDMAEA BCQ) and poly [(dimethylamino) ethyl acrylate methyl chloride quaternary salt] (PDMAEA MCQ).
Wherein the amphoteric compound has a pKa1 value of 1 to 3 and a pKa2 value of 8 to 12. 2. A slurry composition for polishing a nitride film,
Wherein the amphoteric compound is selected from the group consisting of glycine, alanine, serine, phenylalanine, threonine, valine, leucine, isoleucine, proline, histidine, lysine, arginine, aspartic acid, tryptophan, glutamine, betaine, cocodimopropylbetaine, At least one selected from the group consisting of boron, phosphorus, and phosphorus.
Wherein the weight ratio of the amphoteric compound / cationic polymer is 50 to 200. The slurry composition for polishing a nitride film according to claim 1,
The nonionic polymer may be at least one selected from the group consisting of polyethylene glycol, polypropylene glycol, polyvinyl pyrrolidone, polyoxyalkylene alkyl ether, polyoxyalkylene alkyl ester, polyoxyethylene methyl ether, polyethylene glycol sulfonic acid, polyvinyl alcohol, polyethylene oxide , Polypropylene oxide, polyalkyl oxide, polyoxyethylene oxide, polyethylene oxide-propylene oxide copolymer, cellulose, methylcellulose, methylhydroxyethylcellulose, methylhydroxypropylcellulose, hydroxyethylcellulose, carboxymethylcellulose, carboxymethylcellulose Wherein the slurry composition contains at least any one selected from the group consisting of hydroxyethyl cellulose, sulfoethyl cellulose, and carboxymethyl sulfoethyl cellulose.
Wherein the nonionic polymer is 0.001 wt% to 5 wt% of the slurry composition for nitriding the polishing slurry.
The above-
At least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic or inorganic material, and a metal oxide in a colloidal state,
Wherein the metal oxide comprises at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, manganese, and magnesia.
Wherein the abrasive grains are 0.5 wt% to 10 wt% of the slurry composition for polishing a nitride film.
Wherein the pH of the slurry composition for polishing a nitride film is from 4 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150186176A KR101737943B1 (en) | 2015-12-24 | 2015-12-24 | Multi-function polishing slurry composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150186176A KR101737943B1 (en) | 2015-12-24 | 2015-12-24 | Multi-function polishing slurry composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR101737943B1 true KR101737943B1 (en) | 2017-05-19 |
Family
ID=59049347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150186176A KR101737943B1 (en) | 2015-12-24 | 2015-12-24 | Multi-function polishing slurry composition |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101737943B1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200062732A (en) * | 2018-11-27 | 2020-06-04 | 주식회사 케이씨텍 | Polishing slurry composition |
| KR20200077730A (en) * | 2018-12-21 | 2020-07-01 | 주식회사 케이씨텍 | Polishing slurry composition |
| KR20210078956A (en) * | 2019-12-19 | 2021-06-29 | 주식회사 케이씨텍 | Multi-selective polishing slurry composition |
-
2015
- 2015-12-24 KR KR1020150186176A patent/KR101737943B1/en active Search and Examination
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200062732A (en) * | 2018-11-27 | 2020-06-04 | 주식회사 케이씨텍 | Polishing slurry composition |
| KR102185042B1 (en) * | 2018-11-27 | 2020-12-01 | 주식회사 케이씨텍 | Polishing slurry composition |
| KR20200077730A (en) * | 2018-12-21 | 2020-07-01 | 주식회사 케이씨텍 | Polishing slurry composition |
| KR102279324B1 (en) * | 2018-12-21 | 2021-07-21 | 주식회사 케이씨텍 | Polishing slurry composition |
| KR20210078956A (en) * | 2019-12-19 | 2021-06-29 | 주식회사 케이씨텍 | Multi-selective polishing slurry composition |
| KR102316237B1 (en) * | 2019-12-19 | 2021-10-25 | 주식회사 케이씨텍 | Multi-selective polishing slurry composition |
| US11332641B2 (en) | 2019-12-19 | 2022-05-17 | Kctech Co., Ltd. | Polishing slurry composition enabling implementation of multi-selectivity |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101737938B1 (en) | Multi-function polishing slurry composition | |
| KR101761789B1 (en) | Additive composition for polishing slurry and positive polishing slurry composition comprising the same | |
| US10557058B2 (en) | Polishing agent, polishing agent set, and substrate polishing method | |
| KR101827366B1 (en) | Slurry composition for high step height polishing | |
| KR20170076191A (en) | Abrasive particle-dispersion layer complex and polishing slurry composition comprising the same | |
| US11332641B2 (en) | Polishing slurry composition enabling implementation of multi-selectivity | |
| KR20150048790A (en) | Polishing agent, polishing agent set and method for polishing base | |
| CN103492519A (en) | Compositions and methods for selective polishing of silicon nitride materials | |
| KR101737943B1 (en) | Multi-function polishing slurry composition | |
| KR101715931B1 (en) | Abrasive particle-dispersion layer complex and polishing slurry composition comprising the same | |
| KR20180071631A (en) | Chemical mechanical polishing slurry composition of wafer contaning poly-silicon | |
| KR20200082046A (en) | Polishing slurry composition | |
| KR102279324B1 (en) | Polishing slurry composition | |
| US10844244B2 (en) | Polishing additive composition, polishing slurry composition and method for polishing insulating film of semiconductor element | |
| KR20200061796A (en) | Polishing slurry composition | |
| KR20170076058A (en) | Abrasive particle-dispersion layer complex and polishing slurry composition comprising the same | |
| KR20190139568A (en) | Cmp slurry composition | |
| KR20190068806A (en) | Slurry composition for cmp | |
| KR102434586B1 (en) | Multi-function polishing slurry composition | |
| CN113242891B (en) | Polishing slurry composition | |
| KR20190080616A (en) | Slurry composition for cmp | |
| KR20190066399A (en) | Slurry composition for cmp | |
| KR101797746B1 (en) | Abrasive particle-dispersion layer complex and polishing slurry composition comprising the same | |
| KR102275429B1 (en) | Slurry composition for cmp and the polishing particle therein | |
| KR20200053213A (en) | Chemical mechanical polishing slurry composition for ild polishing process or sti polishing process and polishing method using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination |