KR20170072692A - Light emitting device and manufacturing method thereof - Google Patents

Light emitting device and manufacturing method thereof Download PDF

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Publication number
KR20170072692A
KR20170072692A KR1020150181176A KR20150181176A KR20170072692A KR 20170072692 A KR20170072692 A KR 20170072692A KR 1020150181176 A KR1020150181176 A KR 1020150181176A KR 20150181176 A KR20150181176 A KR 20150181176A KR 20170072692 A KR20170072692 A KR 20170072692A
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South Korea
Prior art keywords
substrate
light emitting
internal processing
semiconductor layer
emitting device
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KR1020150181176A
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Korean (ko)
Inventor
장성규
이규호
채종현
조홍석
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서울바이오시스 주식회사
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Priority to KR1020150181176A priority Critical patent/KR20170072692A/en
Priority to PCT/KR2016/012460 priority patent/WO2017078368A1/en
Priority to TW105135399A priority patent/TWI613836B/en
Publication of KR20170072692A publication Critical patent/KR20170072692A/en
Priority to US15/971,974 priority patent/US20180261723A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)

Abstract

An embodiment of the present invention is a substrate processing apparatus including: a substrate having a first surface and a second surface opposite to the first surface, the substrate having at least one internal processing line formed therein; A light emitting diode provided on a first surface of the substrate; And a scribe line formed on a first surface of the substrate, the scribe line being disposed between the light emitting diode and an adjacent light emitting diode.

Description

TECHNICAL FIELD The present invention relates to an ultraviolet light emitting device and a manufacturing method thereof,

The present invention relates to an ultraviolet light-emitting device and a method of manufacturing the same, and more particularly, to an ultraviolet light-emitting device and a method of manufacturing the same that can improve light extraction efficiency.

Each chip constituting a light emitting device can be generally formed by growing a semiconductor layer on one wafer and then separating the wafer into chips by a cutting process.

At this time, scribing, breaking, laser scribing, and braking processes using a tip or a blade can be applied to the individual chip separation process.

The scribing process using a laser can increase the operation speed and increase the productivity, but it can damage the chip (electrode or active layer) and deteriorate the characteristics of the semiconductor light emitting device .

The present invention provides an ultraviolet light emitting device and a method of manufacturing the same that can improve productivity and improve reliability when a light emitting device is individually separated on a chip basis.

The present invention also provides an ultraviolet light emitting device and a method of manufacturing the same, which can improve the amount of light emitted to the side of a substrate after the individual separation process of the light emitting device.

The objects of the present invention are not limited to those described above, and other objects and advantages of the present invention which are not mentioned can be understood by the following description.

An ultraviolet light emitting device according to an embodiment of the present invention includes: a substrate having a first surface and a second surface opposite to the first surface, the at least one internal processing line being formed therein; A light emitting diode provided on a first surface of the substrate; And a scribe line formed on a first surface of the substrate, the scribe line being disposed between the light emitting diode and an adjacent light emitting diode.

In one embodiment, three or more internal processing lines may be provided.

In one embodiment, each of the internal processing lines may be formed spaced apart in parallel.

In one embodiment, the inner processing line may be formed by irradiation of a pulsed laser.

In one embodiment, the scribe line may be a " V " shaped groove.

In one embodiment, the scribe line may be formed by laser irradiation.

In one embodiment, the thickness of the substrate may be 200 [mu] m to 300 [mu] m.

In one embodiment, the light emitting diode includes a first type semiconductor layer, an active layer, and a second type semiconductor layer, and a first contact electrode having a reflective material may be formed on the first type semiconductor layer.

A method of manufacturing a light emitting device according to an embodiment of the present invention includes: preparing a substrate having a first surface and a second surface; Forming a plurality of light emitting diodes on a first surface of the substrate; Forming a scribe line to partition a plurality of light emitting diodes on a first surface of the substrate; Forming at least one internal processing line within the substrate; And separating the plurality of light emitting diodes individually along the scribe line.

In one embodiment, in the step of preparing the substrate, the thickness of the substrate may be 200 mu m to 300 mu m.

In one embodiment, the inner processing line may be formed by irradiating a pulsed laser through the second side of the substrate.

In one embodiment, in the step of forming the scribe line, the scribe line may be a " V " -type groove formed by irradiation of a laser.

In one embodiment, forming the internal machining line may include moving or rotating the laser system relative to at least one of the X, Y, and Z axes.

In one embodiment, the step of forming the internal machining line may include moving or rotating the substrate positioned above the machining surface of the laser system relative to at least one of the X, Y, and Z axes.

According to the embodiment of the present invention, a plurality of internal processing lines are formed inside the substrate through the back surface of the substrate so as not to damage the chip, and a "V" type scribe line is formed on the surface of the substrate, Of the chip can be stably performed, thereby improving the yield and improving the reliability.

According to the embodiment of the present invention, since the plurality of modified regions are formed on the side surface of the substrate after the individual separation process of the light emitting device by the internal processing line formed inside the substrate, the critical angle in the light emitting device side The external light extraction efficiency can be improved.

It should be understood that the effects of the present invention are not limited to the above effects and include all effects that can be deduced from the detailed description of the present invention or the configuration of the invention described in the claims.

1 is a plan view showing a light emitting device according to an embodiment of the present invention.
2 is a cross-sectional view taken along the line "A-A '" in FIG.
3 to 5 are cross-sectional views illustrating a process of manufacturing a light emitting device according to an embodiment of the present invention.
6A and 6B are photographs showing a cross-section and a plane view of a light emitting device having a plurality of internal processing lines according to an embodiment of the present invention, respectively.
7A and 7B are photographs showing a cross-section and a plane view of a light emitting device having a plurality of internal processing lines and a " V " -type groove according to an embodiment of the present invention.
8 is a perspective view illustrating a light emitting device package manufactured using a light emitting device according to an embodiment of the present invention.
9 is a graph showing the light emitting power Po according to the number of internal processing lines of the light emitting device according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention in the drawings, portions not related to the description are omitted, and like reference numerals are assigned to similar components throughout the specification.

Throughout the specification, when a part is referred to as being "connected" to another part, it includes not only "directly connected" but also "indirectly connected" . Also, when an element is referred to as "comprising ", it means that it can include other elements, not excluding other elements unless specifically stated otherwise.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a plan view showing a light emitting device according to an embodiment of the present invention.

Referring to FIG. 1, the light emitting device 100 according to an embodiment of the present invention may include a first bump electrode 151 and a second bump electrode 152 spaced from one surface of a substrate.

The first bump electrode 151 may be formed on the first pad electrode 131 and the first pad electrode 131 may be formed on the first contact electrode 131. The first contact electrode 141 is an electrode for forming ohmic contact characteristics with the first-type semiconductor layer, and is located in the exposed region of the first-type semiconductor layer except for the mesa portion in order to improve current dispersion of the ultraviolet light-emitting element . The first contact electrode 141 may include a reflective material.

The reflective material reflects ultraviolet light reflected from the substrate 110 toward the first contact electrode 141 side toward the substrate 110 side, thereby improving light extraction efficiency.

The reflective material may be formed of a metal material having excellent conductivity. The reflective material may include, for example, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, In particular, in one embodiment of the present invention, the reflective material may be Al with high reflectance in the ultraviolet wavelength band, and the reflective material may be formed of a matrix structure of the islands, a plurality of lines or a mesh structure.

The second bump electrode 152 may be formed on the second pad electrode 132 and the second pad electrode 132 may be formed on the second contact electrode 142. The second contact electrode 142 may be formed on the second-type semiconductor layer.

On both sides of the second bump electrode 152, the second pad electrode 132, and the second contact electrode 142, concave portions may be formed concavely inwardly. That is, the concave portion may be formed symmetrically with the first bump electrode 151, the first pad electrode 131, and the first contact electrode 141 adjacent to the first bump electrode 151 and the opposite side.

2 is a cross-sectional view of a light emitting device according to an embodiment of the present invention, taken along line A-A '' of FIG.

Referring to FIG. 2, the light emitting device 100 according to an embodiment of the present invention may be an ultraviolet light emitting device capable of emitting light in an ultraviolet region. For example, the ultraviolet light emitting device according to one embodiment may emit deep ultraviolet light of 360 nm or less.

The ultraviolet light emitting device according to an embodiment of the present invention may include a substrate 110 and a light emitting diode 120.

 The substrate 110 is for growing a semiconductor single crystal and may have a first surface 110a and a second surface 110b opposite to the first surface 110a.

The substrate 110 may be made of zinc oxide (ZnO), gallium nitride (GaN), silicon carbide (SiC), aluminum nitride (AlN) or the like. However, since the degree of orientation is high, Transparent materials including sapphire without sapphire may be mainly used.

A buffer layer (not shown) for relieving lattice mismatch between the substrate 110 and the first-type semiconductor layer 121 may be further provided on the first surface 110a of the substrate 110. [ The buffer layer may be composed of a single layer or a plurality of layers, and may consist of a low-temperature buffer layer and a high-temperature buffer layer when the layer is composed of a plurality of layers.

The scribe line 111 may be formed on the first surface 110a of the substrate 110 so as to facilitate the individual separation process in units of chips. Can be formed.

In addition, at least one internal processing line 112 may be formed apart from the substrate 110. At this time, the thickness of the substrate 110 is not particularly limited, but it may have a thickness of 200 mu m to 300 mu m to improve the usability in a limited space in consideration of packaging.

However, since an increase in the side surface area of the substrate 110 can lead to an increase in the light amount, the side surface area of the substrate can be increased within a permissible range without increasing the thickness of the substrate.

Therefore, at least one internal processing line 112 is formed at a predetermined interval by a laser beam irradiated to the inside of the substrate 110, and by the change of the substrate occurring when the internal processing line 112 is formed A plurality of uniform or nonuniform modified regions 113 may be formed on the side surface of the substrate during the individual separation process in chip units. When the modified regions 113 are formed as described above, the thickness of the substrate 110 is not changed, but the side surface area of the substrate is relatively increased.

The height of the modified regions 113 may be 100 nm to 1 占 퐉. The modified regions 113 may be arranged at regular intervals or irregular intervals on the other surface and the side surface of the substrate 110 and may be formed in the same shape or in various shapes, It is possible.

Accordingly, when the side surface area of the substrate 110 is increased in a state where the thickness of the substrate 110 is 200 to 400 占 퐉, the light emitting efficiency can be improved. This will be described later with reference to FIG.

Further, although not shown, by forming a plurality of modified regions on the second surface 110b of the substrate 110, the light scattering ratio between the substrate and the light emitting diode is increased while increasing the overall surface area of the substrate, .

The light emitting diode 120 is a light emitting structure that converts energy resulting from the recombination of electrons and holes into light. The light emitting diode 120 processes the surface of the substrate 110 through a wet or dry process, and forms a semiconductor thin film .

The light emitting diode 120 may include a first type semiconductor layer 121, an active layer 122 and a second type semiconductor layer 123 which are sequentially stacked on a first surface 110a of the substrate 110.

The first type semiconductor layer 121 may be provided on the first surface 110a of the substrate 110 and may be partially exposed as shown in FIG. And a part of the second-type semiconductor layer 123 may be exposed by mesa etching. A portion of the first-type semiconductor layer 121 may also be etched during the mesa etching.

The first-type semiconductor layer 121 is formed of In x Al y Ga 1 -xy N (0? X? 1, 0? Y? 1, 0? X + y? 1) doped with a first type impurity, ) Series III-V compound semiconductors, and may be composed of a single layer or a multilayer. As the N-type conductive impurity, Si, Ge, Sn or the like can be used.

The active layer 122 may be provided on the first type semiconductor layer 121 and the active layer 122 may be formed on the first type semiconductor layer 121 and the second type semiconductor layer 123, To generate light. According to one embodiment, the active layer 122 may have a multi-quantum well structure to enhance coupling efficiency of electron-holes. The compositional element and the composition ratio can be determined so that the active layer 122 emits ultraviolet light having a desired wavelength of light, for example, a peak wavelength of 200 nm to 360 nm.

The second-type semiconductor layer 123 may be formed on the active layer 122 and the second-type semiconductor layer 123 may include a second-type impurity such as In x Al y Ga 1 -x- y N (0? x? 1, 0? y? 1, 0? x + y? 1) The second-type semiconductor layer 123 may be a single layer or a multilayer. As the P-type conductive impurity, Mg, Zn, Be and the like can be used.

Pad electrodes 131 and 132 may be provided on the surfaces of the first type semiconductor layer 121 and the second type semiconductor layer 123. The pad electrodes 131 and 132 may include Ni, Cr, Ti, Al, Ag, or Au. The pad electrodes 131 and 132 may be divided into a first pad electrode 131 and a second pad electrode 132. The first pad electrode 131 may be electrically connected to the exposed portion of the first semiconductor layer 121 and the second pad electrode 132 may be electrically connected to the exposed portion of the second semiconductor layer 123. [ Can be connected.

A step pad layer 133 may be further formed between the first type semiconductor layer 121 and the first pad electrode 131. The step pad layer 133 compensates the step so that the phase of the first pad electrode 131 corresponds to the phase of the second pad electrode 132. That is, the first pad electrode 131 may be formed at a lower position than the second pad electrode 132 by the mesa etching of the first type semiconductor layer 121, The first pad electrode 131 and the second pad electrode 132 may be in phase with each other through the stepped pad layer 133 formed on the first pad electrode 131. The step pad layer 133 may include, for example, Ti and Au.

The first contact electrode 141 and the second contact electrode 142 are formed between the first type semiconductor layer 121 and the stepped pad layer 133 and between the second type semiconductor layer 123 and the second pad electrode 132, 2 contact electrodes 142 may be further included. The first contact electrode 141 may include, for example, Cr, Ti, Al, and Au, and the second contact electrode 142 may include, for example, Ni and Au.

In an embodiment of the present invention, the light emitting device 110 may further include a passivation layer 160 that protects the lower light emitting diode 120 from the external environment.

The passivation layer 160 may be formed of an insulating film including a silicon oxide film or a silicon nitride film. The passivation layer 160 may have openings exposing the surface of the first pad electrode 131 and a portion of the surface of the second pad electrode 132. [

In addition, an embodiment of the present invention may further include a bump electrode when the light emitting device 100 is mounted on a submount in the form of a flip chip. The bump electrode may include a first bump electrode 151 provided on the first pad electrode 131 and a second bump electrode 152 provided on the second pad electrode 132. The first bump electrode 151 and the second bump electrode 152 may include Au, for example.

At this time, the bump electrodes 151 and 152 may be formed on the pad electrodes 131 and 132 to cover a part of the surface of the passivation layer 160. A part of the passivation layer 160 is sandwiched between the pad electrodes 131 and 132 and the bump electrodes 151 and 152 and the bump electrodes 151 and 152 are connected to the pad electrodes 131 and 152, 132 and a portion of the surface of the passivation layer 160.

3 to 5 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.

Referring to FIG. 3, a substrate 110 is prepared, and a plurality of (first) semiconductor layers 121, an active layer 122, and a second semiconductor layer 123 are formed on one surface of the substrate 110 Semiconductor layers are sequentially formed. The substrate 110 may be prepared as a sapphire substrate having a thickness of 200 to 400 mu m.

A plurality of semiconductor layers such as the first type semiconductor layer 121, the active layer 122 and the second type semiconductor layer 123 may be formed by a method of forming known semiconductor layers such as MOCVD, molecular beam growth, epitaxial growth Method or the like.

Specifically, the first-type semiconductor layer 121 may be formed of a GaN layer or a GaN / AlGaN layer doped with a first-type conductive impurity, and Si, Ge, or Sn may be used as the first-type conductive impurity . The second-type semiconductor layer 123 may be formed of a GaN layer or a GaN / AlGaN layer doped with a second-type conductive impurity, and Mg, Zn, Be or the like may be used as the second-type conductive impurity. The active layer 122 is formed of an InGaN / GaN layer of a multi-quantum well structure, and may be formed of a single quantum well layer or a double hetero structure.

The first pad electrode 131 is formed on the first type semiconductor layer 121 and the second pad electrode 132 is formed on the second type semiconductor layer 123 with a minimum contact resistance value. The active layer 122 and the second semiconductor layer 123 are partially etched to expose a part of the first semiconductor layer 121 to the outside and the first pad semiconductor layer 121 is exposed on the exposed first semiconductor layer 121, (131) can be formed.

The first contact electrode 141 and the second contact electrode 142, which are in contact with the first and second semiconductor layers 121 and 123, respectively, before forming the pad electrodes 131 and 132, And the pad electrodes 131 and 132 may be formed on the contact electrodes 141 and 142, respectively.

The first bump electrode 151 and the second bump electrode 152 may be formed on the first pad electrode 131 and the second pad electrode 132 for flip chip bonding on the submount.

Meanwhile, the light emitting diode 120 may be formed on the first surface 110a of the sapphire substrate 110 through a buffer layer (not shown). When the first-type semiconductor layer 121 is directly grown on the substrate 110, a defect may be generated in the first-type semiconductor layer 121 due to a difference in lattice constant between the sapphire and the gallium nitride. A buffer layer (not shown) may first be formed on the sapphire substrate 110 and the first type semiconductor layer 121, the active layer 122 and the second type semiconductor layer 123 may be grown thereon. Such a buffer layer (not shown) is composed of an undoped pure GaN layer and may be omitted depending on the characteristics of the device and the process conditions.

After forming the light emitting diode 120, a portion of the second surface 110b may be grinded such that the substrate 110 has a predetermined thickness. At this time, it is preferable to grind the substrate 110 so that the thickness of the substrate 110 is about 200 to 400 탆 in consideration of durability and size of the light emitting device 100.

3, each light emitting diode 120 is divided into a first surface 110a of a substrate 110 on which a plurality of light emitting diodes 120 are formed so that a plurality of light emitting devices 100 can be separated from each other To form a scribe line (111).

The scribe line 111 can be formed by successively irradiating a laser beam along a line along which the object is intended to be cut. At this time, the semiconductor layer formed on the first surface 110a of the substrate 110 is softened by the irradiation of the laser beam, so that the scribe line 111 can be formed in the form of a substantially "V" shaped groove.

Referring to FIG. 4, an internal processing line 112 is formed in the substrate 110 by irradiating a laser beam having a different wavelength through a second surface 110b of the substrate 110. FIG. In one embodiment of the present invention, the formation of the inner machining line 112 has been described as proceeding after the formation of the scribe line 111, but if necessary, the formation of the inner machining line may proceed prior to the formation of the scribe line 111. [

A plurality of the inner processing lines 112 may be formed in the substrate, and each of the inner processing lines 112 may be spaced apart at a predetermined interval. Each of the inner processing lines 112 may be formed parallel to each other, or may be formed not parallel.

The inner processing line 112 is formed by a stealth laser having a different wavelength through the second surface 110b so as not to cause damage to the outer surface of the substrate 110 and particularly the light emitting diode 120 of the first surface 110a. It is preferable to form it inside the substrate. The laser having a different wavelength can be output, for example, by a pulsed laser system (not shown).

One embodiment of the present invention is a method of manufacturing a substrate 110 by locating a substrate 110 on the processing surface of the laser system and outputting at least one pulsed laser signal from the laser system to generate fine cracks in the substrate 110, 112 can be formed. The laser signal configured to form the internal processing line 112 inside the substrate 110 may be adjusted by the power profile. Thereafter, a plurality of internal processing lines 112 can be formed inside the substrate 110 with the laser signal directed toward the substrate.

In order to form a plurality of internal processing lines in the substrate 110, a laser signal must be capable of controllably traversing the surface of the substrate 110. To this end, one embodiment of the present invention includes at least one of a laser system and a substrate One of which must be selectively movable or rotatable.

That is, in one embodiment of the present invention, the laser system is moved or rotated relative to at least one of the X-axis, the Y-axis, and the Z-axis, or the substrate 110 positioned on the processing surface of the laser system is moved in the X- And moving or rotating relative to at least one of the Z-axes.

When the pulsed laser is irradiated inside the substrate 110 while moving or rotating the laser system or the substrate 110 as described above, a plurality of interiors (not shown) are formed between the first surface 110a and the second surface 110b of the substrate 110, By forming the processing line 112, fine cracks can be generated inside the substrate 110.

5, when a predetermined pressure is applied along the scribe line 111 in a state where a plurality of internal processing lines 112 are formed between the first surface 110a and the second surface 110b of the substrate 110 , And the scribe line 111 can be individually and separately separated in the same form. As a method of separately separating the light emitting elements, for example, a braking method, a blade method, or the like can be applied.

Embodiments of the present invention are particularly useful when isolating light emitting devices fabricated on very rigid substrates such as sapphire. That is, it cuts along a precisely controlled scribe line 111 and enables rapid cutting of the rigid substrate with minimal mechanical work. Thus, the yield and reliability of the light emitting device can be improved.

For example, when a plurality of (four in one embodiment) internal processing lines are formed without forming the " V " grooves in the light emitting element as shown in FIG. 6A, sawing is performed for individual separation of the light emitting elements, It is difficult to precisely cut along the line along which the substrate is to be cut at the time of sintering, which may cause defective sowing. In such a case, the yield of the light emitting device may be reduced.

However, when a " V " type groove is formed using a laser beam as well as a plurality of (four in one embodiment) internal processing lines in the light emitting device as shown in FIG. 7A, cutting can be accurately performed along the line along which the substrate is to be cut at the time of sawing, so that defective sowing can be remarkably reduced, thereby improving the yield of the light emitting device.

In the side surface of each of the light emitting devices thus separated, for example, on the side surface of the substrate 110, a portion where the internal processing line 112 is formed causes minute cracks, thereby forming a plurality of modified regions 113 whose cut surfaces are not smooth. The modified region 113 may have a concavo-convex structure, for example. The area of the side surface of each light emitting device is increased due to the modified region 113, thereby increasing the amount of light emitted to the side of each light emitting device, thereby improving light extraction efficiency. At this time, the length of the modified region 113 may be uniform or non-uniform, and the interval between the modified region and the modified region may be constant or may not be constant.

8 is a perspective view illustrating a light emitting device package manufactured using the light emitting device according to the embodiment of the present invention.

Referring to FIG. 8, the light emitting device package 1000 according to the embodiment of the present invention may include a package body 1100 and a light emitting device 100 mounted on the package body 1100.

The cavity 1110 may be formed on one side surface of the package body 1100 so that the inclined surface 1111 is formed around the light emitting device 100. The inclined plane 1111 can increase the light extraction efficiency of the light emitting device package.

The package body 1100 may be divided into the first electrode unit 1200 and the second electrode unit 1300 by the insulating unit 1400 and electrically separated from each other.

For example, when the light emitting device 100 emits ultraviolet light, the package body 1100 may be formed of aluminum (Al), aluminum (Al), aluminum And can be implemented as a material. Accordingly, the first electrode unit 1200 and the second electrode unit 1300 can increase the light efficiency by reflecting the light generated from the light emitting device 100, It can play a role of discharging.

The light emitting device 100 may be electrically connected to the first electrode unit 1200 and the second electrode unit 1300 through a connection member 1600 such as a metal wire to receive power.

The light emitting device 100 may be mounted on the cavity 1110 of the package body 1100 while being mounted on the submount and electrically connected to the first electrode layer 1200 and the second electrode layer 1300 by a metal wire Can be connected. Reference numeral 1500 denotes a zener diode, which may also be referred to as a constant voltage diode.

9 is a graph showing the light emitting power Po according to the substrate area of the light emitting diode package according to the embodiment of the present invention.

Referring to FIG. 9, a light emitting device according to an embodiment of the present invention was prepared, and a current of 20 mA was applied to the light emitting device to measure the light emitting power (Po). At this time, the thickness of the substrate of the light emitting device is 250 mu m.

When a current of 20 mA is applied to the light emitting device, the emission power is 2.10 mW when the internal processing line is 0, 2.56 mW when the internal processing line is 3, 2.64 mW when the internal processing line is 4, When the number of processing lines is five, it is 2.65 mW. As the number of internal processing lines increases, the emission power also increases.

That is, when the number of internal processing lines is three or more, the rate of increase of the emission power emitted to the side surface of the substrate is increased as compared with the case where the internal processing line is not formed. At this time, when the number of internal processing lines is four, the increase rate of the light emission power remarkably increases, and it is understood that the increase rate of the light emission power decreases with the number of internal processing lines exceeding four.

It will be understood by those skilled in the art that the foregoing description of the present invention is for illustrative purposes only and that those of ordinary skill in the art can readily understand that various changes and modifications may be made without departing from the spirit or essential characteristics of the present invention. will be.

That is, it should be understood that the embodiments described above are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

Accordingly, the scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

100: Light emitting element
110; Substrate 110a; The first side
110b; Second face 111; Scribe line
112 internal processing line 113; Modified region
120: light emitting diode 121: first type semiconductor layer
122: active layer 123: second-type semiconductor layer
131: first pad electrode 132: second pad electrode
141: first contact electrode 142: second contact electrode
151; A first bump electrode 152; The second bump electrode
160; The passivation layer

Claims (14)

A substrate having a first surface and a second surface opposite to the first surface, the substrate having at least one internal processing line formed therein;
A light emitting diode provided on a first surface of the substrate, the light emitting diode emitting ultraviolet light;
A scribe line formed on a first surface of the substrate, the scribe line being disposed between the light emitting diode and an adjacent light emitting diode;
And an ultraviolet light emitting element.
The method according to claim 1,
Wherein at least three internal processing lines are provided.
3. The method of claim 2,
Wherein each of the internal processing lines is spaced apart in parallel.
The method according to claim 1,
Wherein the internal processing line is formed by irradiation with a pulsed laser.
The method according to claim 1,
Wherein the scribe line comprises a " V " -type groove.
6. The method of claim 5,
Wherein the scribe line is formed by laser irradiation.
The method according to claim 1,
Wherein the thickness of the substrate is 200 mu m to 400 mu m.
The method according to claim 1,
Wherein the light emitting diode includes a first type semiconductor layer, an active layer, and a second type semiconductor layer, and a first contact electrode having a reflective material is formed on the first type semiconductor layer.
Preparing a substrate having a first side and a second side;
Forming a plurality of light emitting diodes on a first surface of the substrate;
Forming a scribe line to partition a plurality of light emitting diodes on a first surface of the substrate;
Forming at least one internal processing line within the substrate;
Separating a plurality of light emitting diodes individually along the scribe line;
Wherein the light emitting layer is formed on the substrate.
In the ninth aspect,
Wherein the substrate has a thickness of 200 mu m to 400 mu m in the step of preparing the substrate.
10. The method of claim 9,
Wherein the internal processing line is formed by irradiating a pulse laser through the second surface of the substrate.
10. The method of claim 9,
Wherein in the step of forming the scribe line, the scribe line includes a " V " -type groove formed by irradiation of a laser.
10. The method of claim 9,
Wherein the step of forming the internal processing line includes a step of moving or rotating the laser system relative to at least one of the X axis, the Y axis, and the Z axis.
10. The method of claim 9,
Wherein forming the internal machining line comprises moving or rotating the substrate positioned on the machining surface of the laser system relative to at least one of the X axis, the Y axis, and the Z axis. Way.
KR1020150181176A 2015-11-05 2015-12-17 Light emitting device and manufacturing method thereof KR20170072692A (en)

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KR1020150181176A KR20170072692A (en) 2015-12-17 2015-12-17 Light emitting device and manufacturing method thereof
PCT/KR2016/012460 WO2017078368A1 (en) 2015-11-05 2016-11-01 Ultraviolet light emitting device and method for manufacturing same
TW105135399A TWI613836B (en) 2015-11-05 2016-11-02 A uv light emitting device and method of manufacturing the same
US15/971,974 US20180261723A1 (en) 2015-11-05 2018-05-04 Ultraviolet light emitting device and method for manufacturing same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190022110A (en) * 2017-08-25 2019-03-06 엘지이노텍 주식회사 Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190022110A (en) * 2017-08-25 2019-03-06 엘지이노텍 주식회사 Semiconductor device

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