KR20170070869A - Giant magnetoresistance device using graphene/ferroelectric junction structure, and fabrication method of the same - Google Patents
Giant magnetoresistance device using graphene/ferroelectric junction structure, and fabrication method of the same Download PDFInfo
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- KR20170070869A KR20170070869A KR1020150177850A KR20150177850A KR20170070869A KR 20170070869 A KR20170070869 A KR 20170070869A KR 1020150177850 A KR1020150177850 A KR 1020150177850A KR 20150177850 A KR20150177850 A KR 20150177850A KR 20170070869 A KR20170070869 A KR 20170070869A
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Abstract
The present invention relates to a giant magnetoresistive element using a graphene-ferroelectric junction structure and a method of manufacturing the same, and includes: a nano-island thin film structure 110 in which a nano-dot arrangement pattern of a ferroelectric material is formed; And a graphene thin film structure 120 having a graphene thin film layer 121 provided with electrodes 122 and transferred onto the nano-island thin film structure.
Description
The present invention relates to a giant magnetoresistance device using a graphene-ferroelectric junction structure and a method of manufacturing the same.
The present invention relates to a giant magnetoresistance device using a graphene-ferroelectric junction structure and a method of manufacturing the same.
The magnetic resistance is a phenomenon in which the electric resistance value of the material changes as the magnetic field applied to the material changes. In recent years, the magnetic resistance of a material such as a Fe-Cr alloy and a fine grain- ), And a large magnetoresistive phenomenon which causes a very large resistance change was found in the magnetic recording medium. Using this property, a head and magnetic field sensor as information reproducing means, an ultra high precision magnetic field sensor, a fixed magnetic field sensor, And application of the magnetic field to many fields such as a mirror material of a magnetic field are actively researched. This means that the signal can be detected by the voltage drop caused by the resistance change of the material without changing the magnetic field, which is the principle of the electromagnetic induction law which has been used so far as the reproducing means of the magnetic recording medium.
Graphene, a carbon isotope, is a two-dimensional planar carbon atom thin film. Since it succeeded in producing a perfect two-dimensional graphene structure at room temperature in 2004, graphene has been used as a material for carbon nanotubes And many studies have been actively carried out.
In the meantime, there is a study on a magnetoresistive element using graphene. In this conventional technique, stacks of two pure single-layer graphenes are stacked to form a stack structure [Reference 3], and mosaic-like bilayer graphene Or refracting graphene to form graphene nanoribbons [Ref. 4], by applying internal disorder to graphene to secure magnetoresistance, as in [Reference 1], by doping with nitrogen [Reference 2] .
The present invention induces non-uniform charge mobility in the graphene by a non-uniform electric field generated by electric dipoles inside the ferroelectric nano-dots periodically arranged using the junction structure of graphene and ferroelectric nano-dot arrangement, And to provide a device having a giant magnetoresistance characteristic over a wide temperature range and a manufacturing method thereof.
In order to achieve the above object, a giant magnetoresistive element according to the present invention forms a thin film structure which locally uneven electric field is formed on a graphene thin film layer according to a predetermined pattern to induce nonuniformity of charge mobility of the graphene thin film layer .
The giant magnetoresistive device of the present invention includes: a nano-island thin film structure having a nano-dot arrangement pattern of a ferroelectric material; And a graphene thin film structure having a graphene thin film layer provided with an electrode and formed on the nano-sized thin film structure.
Preferably, the ferroelectric may be a BFO (BiFeO 3).
Preferably, the graphene thin film layer is a graphene monolayer.
Preferably, the fixing layer further comprises a fixing layer on top of the graphene thin film layer, more preferably, the fixing layer is a polymer.
Next, a method of manufacturing a giant magnetoresistive device according to the present invention includes fabricating a nano-island thin film structure having a nano-dot array pattern of a ferroelectric substance, fabricating a graphene thin film structure including a graphene thin film layer provided with electrodes, Is transferred to the nano-island thin film structure to be bonded.
Preferably, the graphene thin film structure is formed on the graphene thin film layer before the graphene thin film structure is transferred and bonded to the nano-island thin film structure.
Preferably, the graphene thin film layer is a graphene single layer produced by a mechanical peeling method.
The giant magnetoresistive element according to the present invention has a charge mobility in the graphene due to a non-uniform electric field generated by electric dipoles inside the ferroelectric nano-dots periodically arranged using the junction structure of graphene and ferroelectric nano-dot arrangement And has a giant magnetoresistive characteristic both at a low temperature and at a normal temperature, and is also easy to manufacture.
1 is a configuration diagram of a giant magnetoresistance device according to the present invention,
2 is a view briefly showing a manufacturing process of a giant magnetoresistance device according to the present invention,
3 (a) and 3 (b) are views showing the bonding state of the graphene thin film layer depending on the presence or absence of the pinning layer of the giant magnetoresistance device according to the present invention,
4 (a) and 4 (b) are graphs showing surface images of the atomic force microscope of the giant magnetoresistive element according to the present invention, Raman analysis data,
FIG. 5 is a graph of a current-voltage according to a change in magnetic field of a giant magnetoresistive device according to the present invention.
The specific structure or functional description presented in the embodiment of the present invention is merely illustrative for the purpose of illustrating an embodiment according to the concept of the present invention, and embodiments according to the concept of the present invention can be implemented in various forms. And should not be construed as limited to the embodiments described herein, but should be understood to include all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
In the description of embodiments according to the present invention, when it is described as being formed on the upper or lower side of each component, the upper (upper) or lower (lower) Or one or more other components are formed by being disposed between the two components.
Also, when expressed as 'upper or lower', it may include not only an upward direction but also a downward direction based on one component.
The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
The giant magnetoresistive element of the present invention is characterized in that a thin film structure is formed in which a nonuniform electric field is formed locally in a certain pattern on a graphene thin film layer to induce nonuniformity in charge mobility of the graphene thin film layer.
1, the giant magnetoresistive device of the present invention includes a nano-island
The nano-island
The graphene
FIG. 2 is a schematic view showing a manufacturing process of a giant magnetoresistance device according to the present invention.
2, a first step (a) of fabricating a nano-island
In the first step (a), a nano-island
Next, the AAO pattern was deposited by pulsed laser deposition (PLD) using BiFeO 3 (BFO) nanoparticles on a AAO pattern using a mask, and then the AAO pattern was removed by etching.
Next, the second process (b) is a process of forming a single layer of
Next, the SiO 2 substrate was removed to prepare a graphene
Preferably, a pinning layer 123 (see FIG. 1) may be formed on top of the graphene film layer on which the electrode is deposited, and the pinning layer may be provided by a polymer of PMMA-C4 (polymethyl methacrylate).
Such a pinned layer can prevent undesired unnecessary strains from acting on the nano-island thin film structure due to the bonding of the graphene thin film layer to the nano-island thin film structure, and can provide an effective periodic doping effect on graphene.
3 (a) and 3 (b) are views showing the bonding state of the graphene thin film layer depending on the presence or absence of the fixing layer of the giant magnetoresistance device according to the present invention, wherein (a) b) shows the case where there is a fixed layer.
As shown in FIG. 3, when there is no separate fixing layer on the graphene
Meanwhile, there are four extrinsic disorders that can be generated in the device of the present invention. First, there is a partial and regular scoring effect through bonding with a high-K nano-dot arrangement, The second is the non-uniform effect of the graphene charge mobility coupled by the electric field generated by the electric dipole inside the ferroelectric nano island, the third is the topological disorder caused by the nano island structure, Which is a doping effect caused by a fixed layer of phosphorus.
Such an extrinsic disorder may be different depending on the presence or absence of the pinned
Each of the ferroelectric nano island thin film structures and the graphene thin film structures thus fabricated was transferred to a nano island thin film structure using a transfer method to fabricate a magnetoresistive element having a nano island and graphene junction structure.
4 (a) and 4 (b) are respectively a surface image and an Raman analysis data of an atomic force microscope of a giant magneto-resistive element according to the present invention, in which graphene has a warp on a BFO nano- The warpage of graphene transferred on the nano-dot array is 1%, and the warpage of graphene on the BFO nano-dot without removing the fixed layer (PMMA-C4) is 0.3%.
FIG. 5 is a graph of a current-voltage according to a magnetic field change in temperature of a giant magnetoresistive device according to the present invention. FIG. 5 is a graph of current-voltage versus temperature of -9T to + 9T at 1T intervals at temperatures of 1.9K, 10K, 100K, 200K, The magnetic field was applied perpendicular to the device surface and the current-voltage was measured.
As can be seen from FIG. 5, it can be seen that the resistance increases as the magnitude of the magnetic field applied to the device increases.
The following Table 1 shows the magnetoresistance ratio at each temperature under a magnetic field of ± 9 T and has a magnetoresistance ratio of 300% or more at a low temperature, and a large magnetoresistance ratio of 160% even at room temperature (300K) .
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. It will be apparent to those of ordinary skill in the art.
110: Nano island thin film structure 111: Substrate
112: Nano island 120: Graphene thin film structure
121: Graphene thin film layer 122: Electrode
123: fixed layer
Claims (9)
A giant magnetoresistive element comprising a graphene thin film layer provided with an electrode and formed on an upper portion of the nanomass thin film structure.
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020150177850A KR101768860B1 (en) | 2015-12-14 | 2015-12-14 | Giant magnetoresistance device using graphene/ferroelectric junction structure, and fabrication method of the same |
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| KR102393182B1 (en) | 2021-04-09 | 2022-04-29 | 인하대학교 산학협력단 | Method of manufacturing a multilayer thin film structure for electric charge storage, a multilayer thin film structure for electric charge storage, and a triboelectric generator device applying a multilayer thin film structure |
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| KR100851982B1 (en) | 2007-02-23 | 2008-08-12 | 삼성전자주식회사 | Ferroelectric information storage media and methods of manufacturing the same |
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