KR20150134188A - Graphyne transistors by using the selected one or more of Graphyne bending deformation, Graphyne position move, that the one or more of work-function controlling of the transistors - Google Patents

Graphyne transistors by using the selected one or more of Graphyne bending deformation, Graphyne position move, that the one or more of work-function controlling of the transistors Download PDF

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Publication number
KR20150134188A
KR20150134188A KR1020140061222A KR20140061222A KR20150134188A KR 20150134188 A KR20150134188 A KR 20150134188A KR 1020140061222 A KR1020140061222 A KR 1020140061222A KR 20140061222 A KR20140061222 A KR 20140061222A KR 20150134188 A KR20150134188 A KR 20150134188A
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graphyne
bending deformation
work function
fermi level
height
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KR1020140061222A
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Korean (ko)
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이윤택
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이윤택
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Priority to KR1020140061222A priority Critical patent/KR20150134188A/en
Priority to PCT/KR2015/005119 priority patent/WO2015178704A2/en
Publication of KR20150134188A publication Critical patent/KR20150134188A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Abstract

The present invention relates to a transistor comprising at least one of bending, locating, and / or one or more bending deformation of a graphyne to control at least one work function, wherein at least one bending deformation of the graphyne, Position shifting, one or more of which are selected from one or more of a height of one or more Schottky barriers (Schottky Barrier), one or more height of a Fermi level (Fermi level) Due to the electrostatic level of the intersecting barrier control circuit with one or more of the following: the material (s), the magnetic particles, the particles with charge or the particles with charge (s) selected at the lower end of the graphyne, (Piezo) material, a magnetic particle, a particle having a charge, or a particle having a charge, To be selected or more than one of the bending deformation, positioning provides a transistor that controls one or more Work function (work function).
The present invention also relates to a transistor having at least one of bending deformation, position shifting, or the like selected from Graphyne, wherein at least one of the bending deformation, (Fermi level) of the at least one Schottky barrier, wherein the at least one of the at least one Schottky barrier and the at least one Schottky barrier is selected. It provides a transistor that adjusts one or more work functions by selecting one or more of graphyne due to the electrostatic level of the barrier regulating circuit, one or more of bending deformation and position shifting.

Description

Wherein the at least one bending deformation, the position movement, and the graphene are selected so that at least one of the at least one bending deformation, the at least one bending deformation, more of the work-function controlling of the transistors}

The present invention relates to a transistor and at least one method of manufacturing a transistor having at least one of bending strain and position shifting of Graphyne, One or more of bending deformation, position shifting of Graphyne, having at least one of elasticity, stretchability and flexibility selected from the group consisting of microunits, graphite units, And at least one transistor for adjusting at least one work function (work function).

1. As for the current semiconductors, which contain billions of transistors of silicon (Si), `10 nm` is considered to be the limit of microprocessing.

2. But if you increase the capacity and processing speed of semiconductors with Graphyne material, you can take the lead of the next generation semiconductor market.

3. Graphyne is a material of the structure of carbon isotopes with properties similar to graphene.

4. To improve semiconductor performance, we need to reduce the size of the transistor to narrow the moving distance of the electrons, or to move the electrons faster by using materials with higher electron mobility.

5. Graphyne, which has high electron mobility, is attracting attention as a substitute for silicon, but the problem is that Graphyne has a "conductor" property. Graphyne is metallic and can not interrupt current. The transistors represent digital signals 0 and 1 due to current flow and interruption. In order to use Graphyne, it is necessary to perform a process of `semiconductorization`, a sufficient vacuum gap, a gap (which may mean a gap, for example, an insulating layer), an air gap, Air layer, which is selected.

6. Graphyne maintains the speed of the electron movement while the standby power problem, which has been recognized as a difficult problem, is selected to be one or more of the Schottky Barrier height, the Fermi level height, One or more bending deformation, and / or position shifting of graphene is selected to solve by adjusting at least one work function.

7. A transistor that controls one or more of the work function with at least one selected from among more than one bending deformation, positioning, etc. of Graphyne made of Graphyne is different from the conventional transistor The Schottky barrier height control of one or more Schottky barriers rather than the channel potential control (silicon transistor type) allows the electronic current to move at high speed while blocking the current. One or more bending deformation, And one or more of the work function (work function) is adjusted by solving the problem.

8. A transistor having at least one bending deformation and / or position shifting of at least one graphyne made of Graphyne and having at least one function selected from the group consisting of at least one Fermi level Fermi level) to adjust the height of at least one work function so that the current can be cut off while the electron movement speed is high.

In one embodiment of the present invention, due to the electrostatic level of the crossover circuit, which is for adjusting the barrier crossing over one or more graphynes, one or more bending deformation, (At least one of Schottky Barrier), Fermi level (Fermi level), or the like, where Graphyne has been selected to be selected from one or more of the work function ) May be provided.

In one embodiment of the invention, one or more of the Piezo (piezo) material, the magnetic particle, the charged particle, or the charged particle is selected so that one or more of them are selected at the lower end of the Graphyne, Due to the electrostatic level of the barrier-regulating circuit, one or more Piezo particles, magnetic particles, charged particles, or charged particles may be selected from one or more of Graphyne, , Or one or more of the Schottky barrier (Schottky barrier) by adjusting the height of one or more of the work function (work function) to control more than one transistor is the principle. One or more Schottky Barriers may have one or more Schottky Barriers at one or more elevations due to the selection of one or more Piezo material, magnetic particles, charged particles, or charged particles. This can also be used to adjust one or more work functions by adjusting one or more of the heights of one or more Fermi levels (Fermi level). This can be controlled by the electrostatic level of the crossing circuit (barrier adjustment) across the top. This configuration may cause one or more bending deformation of at least one graphyne having one or more Piezo (piezoe) material, magnetic particles, charged particles, or charged particles, Graphyne with more than one bending deformation can be understood as adjusting one or more of the height of one or more Schottky Barriers. This allows for the development of transistors using the fast conductivity of Graphyne and allows for the creation of sufficient vacuum gaps, gaps (which can mean gaps, for example insulating layers), air gaps, It is possible to develop a transistor with a conduction speed higher than that of a conventional field effect transistor in a state of being selected from a vacuum layer and an air layer.

In one embodiment of the present invention, it is possible to utilize the curvature characteristics of Graphyne to select one or more of Piezo (piezo) material, magnetic particle, charged particle or charged particle, At least one of a Piezo material, a magnetic particle, a particle having a charge, or a particle having an electric charge is selected because of the electrostatic level of the barrier control circuit crossed with at least one of the lower portions of the graphyne. And at least one of a bending deformation, a position shifting, and the like of the graphyne is selected.

1. As for the current semiconductors, which contain billions of transistors of silicon (Si), `10 nm` is considered to be the limit of microprocessing.

2. But if you increase the capacity and processing speed of semiconductors with Graphyne material, you can take the lead of the next generation semiconductor market.

3. Graphyne is a carbon isostructure material that has the property of transporting electrons faster than silicon.

4. To improve semiconductor performance, we need to reduce the size of the transistor to narrow the moving distance of the electrons, or to move the electrons faster by using materials with higher electron mobility.

However, in order to utilize the excellent conductivity of Graphyne, there has been a problem that it is difficult to control the flow and interruption of the current in the conventional transistor method due to an excessively high conductivity.

      Accordingly, the present invention provides a method of controlling at least one height of one or more Schottky barriers, at least one of bending strain, position shifting, or the like of Graphyne, selected from a Fermi level At least one of a Piezo substance, a magnetic particle, a charged particle, or an electric charge particle selected from one or more of a height, a height, Wherein at least one of Piezo, Magnetic, Charged, or Charged particles is selected due to the electrostatic level of the intersecting barrier regulating circuit being selected from one or more bends of Graphyne A work function, and a position and a movement of the work function.

The present invention also provides a method of adjusting at least one height of one or more Schottky Barriers, one or more of bending strain, position shifting of Graphyne, selected at Fermi level One or more of the height adjustment may be selected. One or more of the barrier switching circuits are crossed. Due to the electrostatic level, at least one of Graphyne, bending deformation, and position movement is selected. The present invention has been made to solve the above problems.

 1. Graphine's proud standby power, while maintaining the speed of the electron movement, has been selected as one of more than one of the Schottky Barrier height, Fermi level height, One or more bending deformation, and / or position shifting of graphene is selected to solve by adjusting at least one work function.

2. One or more bending deformation and / or position shifting of Graphyne made of Graphyne, and having at least one selected from among the above, a transistor which adjusts at least one work function is different from the conventional transistor The Schottky barrier height, rather than the channel potential control (silicon transistor type), allows the electron to move faster and cut off the current, which is due to one or more bends of Graphyne made of Graphyne A work function, and a displacement, a position movement, or the like.

3. The method of claim 1, wherein the transistor further comprises at least one of bending deformation, position shifting, and / or one or more bending deformation of the graphyne made of graphyne, Schottky Barrier), Fermi level (height of Fermi level), or the like, by adjusting at least one of the work function (work function) so as to block the current at a high speed of electron movement.

4. One or more Fermi levels (at least one bending deformation, position shifting, etc.) of the Graphyne made of Graphyne and at least one Fermi level Fermi level) to adjust the height of at least one work function so that the current can be cut off while the electron movement speed is high.

5. At least one bending deformation and position shifting of Graphyne made of Graphyne is selected so that at least one of the work function is adjusted so that the electron movement speed is high and the current And the like.

In one embodiment of the invention, there is provided a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and adjusting at least one of the Work function.

In one embodiment of the invention, one or more of bending deformation, position shifting, etc. of Graphyne is selected to adjust one or more of the height of one or more Schottky Barriers, ).

In one embodiment of the invention, at least one of bending deformation, position shifting of Graphyne is selected so that at least one height of at least one Fermi level (Fermi level) ).

In one embodiment of the invention, one or more of the Piezo (piezo) material, the magnetic particle, the charged particle, or the charged particle is selected so that one or more of them are selected at the lower end of the Graphyne, Due to the electrostatic level of the barrier-regulating circuit, one or more Piezo particles, magnetic particles, charged particles, or charged particles may be selected from one or more of Graphyne, , Or more than one of the Schottky Barrier (Schottky Barrier) to adjust the height of at least one of the work function (work function) to control more than one transistor is the principle. One or more Schottky Barriers may have one or more Schottky Barriers at one or more elevations due to the selection of one or more Piezo material, magnetic particles, charged particles, or charged particles. This can also be used to adjust one or more work functions by adjusting one or more of the heights of one or more Fermi levels (Fermi level). This can be controlled by the electrostatic level of the crossing circuit (barrier adjustment) across the top. This configuration may cause one or more bending deformation of at least one graphyne having one or more Piezo (piezoe) material, magnetic particles, charged particles, or charged particles, One or more of the graphynes to which more than one bending deformation has been applied can be understood as adjusting one or more of one or more of the height of one or more Schottky barriers (Schottky Barrier), the height of the Fermi level (Fermi level) This allows us to develop transistors using the fast conductivity of Graphyne, and it is possible to develop transistors that have difficulty in conventional structures by means of a sufficient vacuum gap (vacuum gap), gap (gap, (Air gap), a vacuum layer, and an air layer, it is possible to develop a transistor having a higher conduction speed than that of a conventional field effect transistor.

In one embodiment of the present invention, it is possible to utilize the curvature characteristics of Graphyne to select one or more of Piezo (piezo) material, magnetic particle, charged particle or charged particle, At least one of a Piezo material, a magnetic particle, a particle having a charge, or a particle having an electric charge is selected because of the electrostatic level of the barrier control circuit crossed with at least one of the lower portions of the graphyne. And at least one of a bending deformation, a position shift, and the like of the graphyne is selected so as to control at least one work function.

According to the present invention as described above, the atmospheric power problem can be reduced to one or more bends of Graphyne being selected from one or more of the height of one or more Schottky barriers (Schottky Barrier), the height of Fermi level (Fermi level) A work function and a work function can be solved by adjusting at least one of a work function and a work function so that a transistor having a higher processing speed than a conventional transistor can be developed.

In addition, according to the present invention as described above, the standby power problem can be reduced to one or more Piezo materials selected from one or more of a height of one Schottky barrier (Schottky barrier), a height of a Fermi level (Fermi level) A work function (work function) is provided by having at least one of magnetic particles, particles having electric charge, particles having electric charge and particles having electric charge selected from at least one of Graphyne, bending deformation, It is possible to develop a transistor having a higher processing speed than a conventional transistor.

1
a. (With one or more Piezo particles, magnetic particles, charged particles or charged particles, and Graphyne at the top), each consisting of one to three Wherein at least one of more than one bending deformation, position shifting, or the like is selected and connected to at least one adjustment of the Work funiction (work function), wherein at least one of the bending deformation, . This means that electrons can move only by one circuit as a general transistor principle.
b. (One or more Piezo (piezo) material, magnetic particles, charged particles, or charged particles) due to the electrostatic levels of the crossed 300 (hatched areas) One or more bending deformation, and / or position shifting of at least one graphyne (with the selected Graphyne at the top) Quot; means connected to one or more adjustments of < / RTI > This means that electrons can move only by one circuit as a general transistor principle.
c. One or more Graphyne's consisting of 1 to 3 constitute the height of one or more Schottky Barriers with one or more 300 (not hatched), and 300 (hatched areas) (One or more Piezo particles, magnetic particles, charged particles or charged particles, and Graphyne on top) due to the electrostatic level of one or more Drawing connected to one or more adjustments of Work funiction (work function) with more than one of Graphine's bending deformation,
d. 1 to 3, wherein one or more Graphyne can control one or more of the height of one or more Schottky Barriers with one or more 300 (not hatched), Fermi level (Fermi level) One or more of which can be controlled by one or more of the height, and the electrostatic level of the crossed 300 (hatched area) 110 (one or more Piezo material, magnetic particles, charge) (Graphyne) having at least one selected from the group consisting of grains having at least one grains or grains having grains, and at least one graphyne having at least one of bending deformation and position shifting. A drawing that leads to one or more adjustments of Work funiction (work function) to one or more 300
e. (With one or more Piezo particles, magnetic particles, charged particles or charged particles, and Graphyne at the top), each consisting of one to three Wherein at least one of more than one bending deformation, position shifting, or the like is selected and connected to at least one adjustment of the Work funiction (work function), wherein at least one of the bending deformation, . This means that electrons can move only by one circuit as a general transistor principle. In one embodiment of the present invention, one or more of the height of one or more Schottky barriers can be adjusted, or one or more of the height of a Fermi level (Fermi level) (Graphyne) having one or more Piezo particles, one or more Piezo particles, a magnetic particle, a charged particle or a charged particle, and one or more Graphyne Bending deformation, position shifting, or the like, and is connected to one or more adjustments of the Work funiction (work function) with one or more of 300s.
f. In an embodiment of the present invention, at least one of the above a to e is selected. In the drawings, the constituent elements shown in the drawings are provided with one or more physical dimensions suggested by the present invention within the scope of the description given in one aspect, The shape may vary. In one embodiment of the present invention, the configuration of the figures may be described as one or more Coulomb blockades and / or one or more reconstructions.
2
a. One or more Graphyne 200s constitute the height of one or more Schottky Barriers with 300 and are made up of one or more Piezo materials, magnetic particles, charged particles, Particles may be selected by one or more of at least one graphyne (200) and at least one of more than one bending deformation, It is meant herein to be connected to one or more circuits. This means that electrons can move only by one circuit as a general transistor principle.
b. One or more Graphyne 200s constitute the height of one or more Schottky Barriers with 300 and the intersections of the passing 300 (not included in the figure, One or more of the Piezo particles, magnetic particles, charged particles, or charged particles may be selected from one or more of the graphynes 200 due to the miraculous level, , One or more of which may be connected to one or more adjustments of the Work funiction by adjusting one or more of the height of one or more schottky barriers to 300, it means. This means that electrons can move only by one circuit as a general transistor principle.
c. One or more Graphyne 200s constitute the height of one or more Schottky Barriers with 300 and are made up of one or more Piezo materials, magnetic particles, charged particles, Particles may be selected from at least one of at least one Graphyne 200 and at least one bending deformation and positional movement so that one or more of the at least one Fermi level Means that at least 300 can be connected to more than one control of the work function (work function), in this case more than one circuit. This means that electrons can move only by one circuit as a general transistor principle.
d. The configuration of the drawings can be described as follows. Wherein at least one graphyne 200 comprises at least one of a height of one or more Schottky Barriers with one or more 300 and a height of one or more Fermi levels, (Graphite) material, magnetic particles, charged particles, or charged particles is selected from one or more of graphite (b), graphite (b), graphite (b) This means that more than one Fermi level height can be connected to more than one circuit, with one or more adjustments to one or more 300 adjustments of Work funiction (work function). This means that electrons can move only by one circuit as a general transistor principle.
e. The configuration of the drawings can be described as follows regardless of the description of the drawings. One or more Graphyne 200s constitute a height of one or more Fermi levels with one or more 300 and are made of one or more Piezo materials, magnetic particles, charged particles, Particles may be selected from at least one of at least one Graphyne 200 and at least one bending deformation and positional movement so that one or more of the at least one Fermi level Means that at least 300 can be connected to more than one control of the work function (work function), in this case more than one circuit. This means that electrons can move only by one circuit as a general transistor principle.
f. In an embodiment of the present invention, at least one of the above a to e is selected. In the drawings, the constituent elements shown in the drawings are provided with one or more physical dimensions suggested by the present invention within the scope of the description given in one aspect, The shape may vary. In one embodiment of the present invention, the configuration of the figures may be described as one or more Coulomb blockades and / or one or more reconstructions.
3
a. (With Graphyne on top) of 90 or 100 (one or more Piezo material, magnetic particles, charged particles, or charged particles, consisting of 1 to 3) Wherein at least one of the at least one graphyne is connected to at least one adjustment of the Work funiction with at least one of more than one bending deformation, It can be connected. This means that electrons can move only by one circuit as a general transistor principle.
b. One or more of 90 or 100 (one or more Piezo material, magnetic particles, charged particles, or charged particles) may be selected because of the electrostatic level of 300 (hatched area) And one or more bending deformation and / or position shifting of at least one graphyne, each of which is provided at the top thereof, and at least one of which is provided with a graphyne, Quot; means connected to one or more adjustments, in this case to one or more circuits. This means that electrons can move only by one circuit as a general transistor principle.
c. 1 to 3, the passages in the drawings are selected from among an adhesive material, an elastomer, a liquid polymer, an insulator and an insulating layer. In one embodiment of the present invention, Air layer), one or more of the height of the Schottky barrier (Fermi level), or one or more of the height of the Fermi level (Fermi level).
d. One or more Graphyne's consisting of 1 to 3 constitute the height of one or more Schottky Barriers with one or more 300 (not hatched), and 300 (hatched areas) (With one or more Piezo particles, magnetic particles, charged particles or charged particles, and Graphyne on top) due to the electrostatic level of the particles Drawing connected to one or more adjustments of Work funiction (work function) with one or more of at least one bending deformation, position shifting, or one or more selected Graphyne
e. 1 to 3, at least one Graphyne is formed on the top of a 90 or 100 (one or more Piezo material, magnetic particles, charged particles, or charged particles) However, 90 or 100 will be described as follows. The operation is described as follows. 90, or 100 (one or more of Piezo, a magnetic particle, a charged particle, or a charged particle) may comprise one or more bend strains, Means that at least one of 300 can be connected to one or more adjustments of the Work funiction (work function), where one or more circuits can be connected. This means that electrons can move only by one circuit as a general transistor principle. In one embodiment of the present invention, one or more of the height of one or more Schottky Barriers (the height of the Fermi level), 90 or more of the height of one or more Schottky Barriers, One or more of 100 (Piezo) materials, magnetic particles, charged particles, or charged particles) may have one or more bends, And may be connected to one or more adjustments of the Work funiction (work function) with more than one 300.
f. In an embodiment of the present invention, at least one of the above a to e is selected. In the drawings, the constituent elements shown in the drawings are provided with one or more physical dimensions suggested by the present invention within the scope of the description given in one aspect, The shape may vary. In one embodiment of the present invention, the configuration of the figures may be described as one or more Coulomb blockades and / or one or more reconstructions.
4
a. One or more Graphyne 200s constitute the height of one or more Schottky Barriers with one or more 300 (not hatched), and one or more Piezo (Piezo) materials, magnetic particles, Particles or charged particles may be selected from one or more of at least one graphyne (200) and at least one of bending deformation, Quot; means connected to one or more adjustments, in this case to one or more circuits. This means that electrons can move only by one circuit as a general transistor principle.
b. One or more Graphyne 200 constitutes the height of one or more Schottky Barriers with one or more 300 (not hatched), and the intersection of 300 and 300 (the configuration in the drawing is crossed One or more of the Piezo material, the magnetic particle, the charged particle, or the charged particle may be selected from one or more of Graphyne 200 due to the electrostatic level of the material Means that at least one of more than one of 300 or more bending deformation, positional bending, or the like is connected to one or more adjustments of Work function (work function), in this case, to more than one circuit. This means that electrons can move only by one circuit as a general transistor principle.
c. One or more Graphyne 200s constitute the height of one or more Schottky Barriers with one or more 300 (not hatched), and one or more Piezo (Piezo) materials, magnetic particles, One or more of the particles or electrified particles may be selected from at least one of more than one graphyne (200) and at least one of the bending deformation and the position shifting. The height of one or more Fermi levels Means that one or more adjustments can be made to one or more of the drawings, here connected to one or more adjustments of the Work funiction (work function). This means that electrons can move only by one circuit as a general transistor principle.
d. The configuration of the drawings can be described as follows. Wherein at least one graphyne 200 comprises at least one of a height of one or more Schottky Barriers with one or more 300 and a height of one or more Fermi levels, (Graphite) material, magnetic particles, charged particles, or charged particles is selected from one or more of graphite (b), graphite (b), graphite (b) This means that more than one Fermi level height can be connected to more than one circuit, with one or more adjustments to one or more 300 adjustments of Work funiction (work function). This means that electrons can move only by one circuit as a general transistor principle.
e. The configuration of the drawings can be described as follows regardless of the description of the drawings. One or more Graphyne 200 constitutes the height of one or more Fermi levels with one or more 300 (not hatched), and one or more Piezo materials, magnetic particles, One or more of the particles or electrified particles may be selected from at least one of more than one graphyne (200) and at least one of the bending deformation and the position shifting. The height of one or more Fermi levels Means that one or more adjustments can be made to one or more of the drawings, here connected to one or more adjustments of the Work funiction (work function). This means that electrons can move only by one circuit as a general transistor principle.
f. In an embodiment of the present invention, at least one of the above a to e is selected. In the drawings, the constituent elements shown in the drawings are provided with one or more physical dimensions suggested by the present invention within the scope of the description given in one aspect, The shape may vary. In one embodiment of the present invention, the configuration of the figures may be described as one or more Coulomb blockades and / or one or more reconstructions.
5
a. (One or more Piezo particles, magnetic particles, charged particles, or charged particles) selected from one or more of Graphyne 200, one or more Means that at least one of 300 or more of the work functions may be connected to one or more adjustments of the work function, in this case one or more circuits. This means that electrons can move only by one circuit as a general transistor principle.
b. Due to the electrostatic levels of the crossed passing 300 (the hatched areas where the configurations in the figure are crossed and the hatched areas - the barrier adjustment), consisting of 1 to 3, one or more Piezo (piezoe) materials, magnetic particles, Or more than one of at least one of the graphyne (200) and the at least one of the bending deformation, the position shifting, and the work function (work function) Quot; means connected to one or more adjustments of < / RTI > This means that electrons can move only by one circuit as a general transistor principle.
c. 1 to 3, the passages in the drawings are selected from among an adhesive material, an elastomer, a liquid polymer, an insulator and an insulating layer. In one embodiment of the present invention, Air layer), one or more of the height of the Schottky barrier (Fermi level), or one or more of the height of the Fermi level (Fermi level).
d. One or more Graphyne's consisting of 1 to 3 constitute the height of one or more Schottky Barriers with one or more 300 (not hatched), and 300 (hatched areas) (At least one Piezo substance, a magnetic particle, a charged particle, or a charged particle) due to an electrostatic level of at least one of 200 (Graphyne) An ideal bending deformation, a position movement, or the like, and is connected to one or more adjustments of Work funiction (work function)
e. (One selected from among at least one Piezo material, magnetic particles, charged particles, or charged particles) consisting of 1 to 3 of at least 200 (Graphyne) Means that at least one of more than one 300 is connected to one or more adjustments of the Work funiction (work function), with at least one of more than one bending deformation, position shifting being selected, wherein more than one circuit can be connected. This means that electrons can move only by one circuit as a general transistor principle. In one embodiment of the present invention, one or more of the height of one or more Schottky barriers can be adjusted, or one or more of the height of a Fermi level (Fermi level) One or more Piezo particles, magnetic particles, charged particles, or charged particles), one or more of 200 (Graphyne), one or more of bending, locating, May refer to a drawing having one or more selected and connected to one or more adjustments of the Work funiction to one or more of the 300s.
f. In an embodiment of the present invention, at least one of the above a to e is selected. In the drawings, the constituent elements shown in the drawings are provided with one or more physical dimensions suggested by the present invention within the scope of the description given in one aspect, The shape may vary. In one embodiment of the present invention, the configuration of the figures may be described as one or more Coulomb blockades and / or one or more reconstructions.
6
a. (At least one of Piezo material, magnetic particles, charged particles, or charged particles) consisting of 1 to 4 of at least 200 (Graphyne) (One or more bending deformation, position shifting, or the like), and is connected to one or more adjustments of the work funiction (work function) to one or more 300 It is meant herein to be connected to one or more circuits. This means that electrons can move only by one circuit as a general transistor principle. In one embodiment of the present invention, one or more of the height of one or more Schottky barriers can be adjusted, or one or more of the height of a Fermi level (Fermi level) One or more Piezo particles, magnetic particles, charged particles, or charged particles), one or more of 200 (Graphyne), one or more of bending, locating, May refer to a drawing having one or more selected and connected to one or more adjustments of Work funiction (work function) to one or more 300 (not drawn in the figure but including the circuit configuration of the drawing).
b. (One or more Piezo substances, magnetic particles, particles having electric charge) due to the electrostatic levels of the crossing 300 (not shown in the figure but including the circuit configuration of the figure) Or charged particles) having at least one of more than one 200 (Graphyne) selected from one or more of bending deformation, position shifting, Means that one or more circuits may be connected to one or more circuits connected to one or more adjustments of the work function (not including the circuit configuration of the drawing but not shown). This means that electrons can move only by one circuit as a general transistor principle. In one embodiment of the present invention, one or more of the height of one or more Schottky barriers can be adjusted, or one or more of the height of a Fermi level (Fermi level) One or more Piezo particles, magnetic particles, charged particles, or charged particles), one or more of 200 (Graphyne), one or more of bending, locating, May refer to a drawing having one or more selected and connected to one or more adjustments of Work funiction (work function) to one or more 300 (not drawn in the figure but including the circuit configuration of the drawing).
c. (Height) of one or more Schottky Barriers with one or more 200 (Graphyne), made up of 1 to 4, with one or more 300 (not shown in the figure but including the circuitry of the drawing) One or more adjustable ones, one or more adjustable heights of Fermi level (Fermi level), and a crossed 300 (which is not shown in the drawing, (At least one of Piezo material, magnetic particles, charged particles, or charged particles) due to the electrostatic level of one or more 200 (Graphyne) One or more of bending deformation, positional movement, or the like is selected, and one or more 300 (including not shown in the figure but including the circuit configuration of the drawing) k < / RTI > In one embodiment of the present invention, one or more of the height of one or more Schottky barriers can be adjusted, or one or more of the height of a Fermi level (Fermi level) One or more Piezo particles, magnetic particles, charged particles, or charged particles), one or more of 200 (Graphyne), one or more of bending, locating, May refer to a drawing having one or more selected and connected to one or more adjustments of Work funiction (work function) to one or more 300 (not drawn in the figure but including the circuit configuration of the drawing).
d. In an embodiment of the present invention, at least one of the above-mentioned items a to c is selected. In the drawings, the constituent elements shown in the drawings have one or more physical dimensions suggested by the present invention, The shape may vary. In one embodiment of the present invention, the configuration of the figures may be described as one or more Coulomb blockades and / or one or more reconstructions.
7
a. At least one of magnetic particles, charged particles or charged particles due to the electrostatic level of the passing circuit (barrier adjustment) is selected (at the bottom of the bottom) (Upper layer where strain is applied) is connected to control of work funiction by one or more of bending deformation, position movement, and right side circuit, which means that it can be connected to more than one circuit do. This means that electrons can move to one or more circuits as a general transistor principle.
b. In one embodiment of the present invention due to the electrostatic level of the crossing circuit (barrier adjustment), one or more of the height of one or more schottky barriers can be adjusted, the height of the Fermi level One or more of which may be selected from one or more of magnetic particles, charged particles, or charged particles, selected from Graphyne (located at the bottom of the bottom) (I.e., an upper layer to which a deformation is applied) may be selected from one or more of bending deformation and position shifting, and connected to one or more adjustments of the work function. This means that electrons can move to one or more circuits as a general transistor principle.
c. In one embodiment of the present invention due to the electrostatic level of the crossing circuit (barrier adjustment), one or more of the height of one or more schottky barriers can be adjusted, the height of the Fermi level One or more of which may be selected from one or more of the following: a piezoelectric material, a magnetic particle, a charged particle, or a charged particle, May refer to a drawing connected to one or more adjustments of the work funiction by having at least one of Graphyne (upper layer subjected to deformation) selected from at least one of bending deformation and position shifting. This means that electrons can move to one or more circuits as a general transistor principle.
d. In the above a to c, the figure shows that the crossed circuit (barrier adjustment) and the graphyne are connected to one cell, and due to the electrostatic level of the passing circuit (barrier adjustment) In embodiments, one or more of the magnetic particles selected from one or more of the one or more of the Schottky Barrier (height of the Schottky Barrier) and the Fermi level (the Fermi level) (At the bottom of the bottom) of one or more of the grains (grafted or charged grains), grainy (Graphyne) And may be associated with one or more adjustments of the work function. This means that electrons can move to one or more circuits as a general transistor principle.
e. In the above a to c, the figure shows that the crossed circuit (barrier adjustment) and the graphyne are connected to one cell, and due to the electrostatic level of the passing circuit (barrier adjustment) In embodiments, one or more of the Piezo (s) may be selected from one or more of which one or more of the height of the Schottky Barrier can be adjusted, or one or more of which the height of the Fermi level (s) At least one of the particles, the magnetic particles, the charged particles, or the charged particles, selected at the bottom (at the bottom of the bottom), is subjected to at least one bending deformation of this graphyne (top layer with deformation) Position shifting, and the like, and may be connected to one or more adjustments of the work function (work function). This means that electrons can move to one or more circuits as a general transistor principle.
f. Regardless of the setting of this figure, in one embodiment of the present invention due to the electrostatic level of the crossed circuit (barrier adjustment), one or more of the height of one or more Schottky Barriers can be adjusted, the Fermi level (Fermi level), one or more of which may be selected from one or more of Graphine (upper layer subjected to deformation), or one or more of bending deformation and position shifting Quot; work " to < / RTI > one or more adjustments of the work function. This means that electrons can move to one or more circuits as a general transistor principle.
g. In one embodiment of the present invention, at least one of the above items a to f is selected. In the drawings, the constituent elements shown in this drawing have one or more physical dimensions suggested by the present invention, The shape may vary.
h. In an embodiment of the present invention, at least one of the above a to e is selected. In the drawings, the constituent elements shown in the drawings are provided with one or more physical dimensions suggested by the present invention within the scope of the description given in one aspect, The shape may vary. In one embodiment of the present invention, the configuration of the figures may be described as one or more Coulomb blockades and / or one or more reconstructions.
8
a. At least one of magnetic particles, charged particles or charged particles due to the electrostatic level of the passing circuit (barrier adjustment) is selected (at the bottom of the bottom) (Upper layer where strain is applied) is connected to control of work funiction by one or more of bending deformation, position movement, and right side circuit, which means that it can be connected to more than one circuit do. This means that electrons can move to one or more circuits as a general transistor principle
b. In one embodiment of the present invention due to the electrostatic level of the crossing circuit (barrier adjustment), one or more of the height of one or more schottky barriers can be adjusted, the height of the Fermi level One or more of which may be selected from one or more of magnetic particles, charged particles, or charged particles, selected from Graphyne (located at the bottom of the bottom) (I.e., an upper layer to which a deformation is applied) may be selected from one or more of bending deformation and position shifting, and connected to one or more adjustments of the work function. This means that electrons can move to one or more circuits as a general transistor principle
c. In one embodiment of the present invention due to the electrostatic level of the crossing circuit (barrier adjustment), one or more of the height of one or more schottky barriers can be adjusted, the height of the Fermi level One or more of which may be selected from one or more of the following: a piezoelectric material, a magnetic particle, a charged particle, or a charged particle, May refer to a drawing connected to one or more adjustments of the work funiction by having at least one of Graphyne (upper layer subjected to deformation) selected from at least one of bending deformation and position shifting. This means that electrons can move to one or more circuits as a general transistor principle
d. In the above a to c, the figure shows that the crossed circuit (barrier adjustment) and the graphyne are connected to one cell, and due to the electrostatic level of the passing circuit (barrier adjustment) In embodiments, one or more of the magnetic particles selected from one or more of the one or more of the Schottky Barrier (height of the Schottky Barrier) and the Fermi level (the Fermi level) (At the bottom of the bottom) of one or more of the grains (grafted or charged grains), grainy (Graphyne) And may be associated with one or more adjustments of the work function. This means that electrons can move to one or more circuits as a general transistor principle
e. In the above a to c, the figure shows that the crossed circuit (barrier adjustment) and the graphyne are connected to one cell, and due to the electrostatic level of the passing circuit (barrier adjustment) In embodiments, one or more of the Piezo (s) may be selected from one or more of which one or more of the height of the Schottky Barrier can be adjusted, or one or more of which the height of the Fermi level (s) At least one of the particles, the magnetic particles, the charged particles, or the charged particles, selected at the bottom (at the bottom of the bottom), is subjected to at least one bending deformation of this graphyne (top layer with deformation) Position shifting, and the like, and may be connected to one or more adjustments of the work function (work function). This means that electrons can move to one or more circuits as a general transistor principle
f. Regardless of the setting of this figure, in one embodiment of the present invention due to the electrostatic level of the crossed circuit (barrier adjustment), one or more of the height of one or more Schottky Barriers can be adjusted, the Fermi level (Fermi level), one or more of which may be selected from one or more of Graphine (upper layer subjected to deformation), or one or more of bending deformation and position shifting Quot; work " to < / RTI > one or more adjustments of the work function. This means that electrons can move to one or more circuits as a general transistor principle.
g. In one embodiment of the present invention, at least one of the above items a to f is selected. In the drawings, the constituent elements shown in this drawing have one or more physical dimensions suggested by the present invention, The shape may vary.
h. In an embodiment of the present invention, at least one of the above a to e is selected. In the drawings, the constituent elements shown in the drawings are provided with one or more physical dimensions suggested by the present invention within the scope of the description given in one aspect, The shape may vary. In one embodiment of the present invention, the configuration of the figures may be described as one or more Coulomb blockades and / or one or more reconstructions.
9
a. This figure shows that, due to the curvature characteristics of Graphyne, one or more Piezo materials may be provided at the lower end of Graphyne and one or more Piezo One or more bending deformation of at least one graphyne and at least one of bending deformation and position shifting, adjusting at least one work function, but adjusting one or more heights of one or more Fermi levels And a main circuit diagram of a transistor for adjusting at least one work function (work function).
b. This figure shows that, due to the curvature characteristics of Graphyne, one or more Piezo materials may be provided at the lower end of Graphyne and one or more Piezo One or more bending deformation of one or more graphynes and bending deformation and position shifting of the at least one Schottky barrier to adjust at least one height of one or more Schottky barriers, And adjusting at least one height of one or more Fermi levels (Fermi level) to select at least one of a work function (work function) and a work function .
c. In an embodiment of the present invention, at least one of the above-mentioned items a to b is selected. In the drawings, the constituent elements shown in the drawings have one or more physical dimensions suggested by the present invention within the scope of the description given in one aspect. The shape may vary.
d. In an embodiment of the present invention, at least one of the above-mentioned items a to c is selected. In the drawings, the constituent elements shown in the drawings have one or more physical dimensions suggested by the present invention, The shape may vary. In one embodiment of the present invention, the configuration of the figures may be described as one or more Coulomb blockades and / or one or more reconstructions.

A transistor for adjusting at least one work function with at least one selected from among at least one bending deformation, position shift, and the like of Graphyne applied to the present invention is configured as shown in Figs.

In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

In one embodiment of the invention, one or more of the Piezo material, the magnetic particle, the charged particle, or the charged particle is selected so that one or more of them are selected at the lower end of the Graphyne, Due to the electrostatic level of the barrier-regulating circuit, one or more Piezo particles, magnetic particles, charged particles, or charged particles may be selected from one or more of Graphyne, , Or more than one of the Schottky barrier (Schottky barrier) to adjust the height of one or more of the work function (work function) to adjust more than one is the principle of the transistor. One or more Schottky Barriers may have one or more Schottky Barriers at one or more elevations due to the selection of one or more Piezo material, magnetic particles, charged particles, or charged particles. , Which can be used as a method of adjusting one or more work functions by adjusting one or more of the height of the Fermi level (Fermi level). The above description can be adjusted due to the electrostatic level of the crossed circuit (barrier adjustment) at the top. This configuration may cause one or more bending deformation of at least one graphyne having one or more Piezo (piezoe) material, magnetic particles, charged particles, or charged particles, Can be understood as controlling one or more of the following: one or more of a Schottky barrier height, a Fermi level height, Based on the above discussion, it is possible to develop transistors using the fast conductivity of Graphyne and to use Graphyne as a sufficient vacuum gap (gap), gap (Air gap), a vacuum layer, and an air layer. The transistor having a conduction rate higher than that of the conventional field effect transistor can be developed.

The present invention relates to an apparatus and a method for controlling a standby power problem that has been recognized as a difficulty while maintaining the speed of movement of electrons that Graphine is proud of is at least one of a height of a Schottky barrier and a height of a Fermi level One or more bending deformation of the graphyne, position movement, or the like is selected so that at least one of the bending deformation and the position movement is selected to solve by adjusting at least one work function.

A transistor that controls at least one work function with at least one selected from at least one bending deformation and position movement of Graphyne made of Graphyne is different from the conventional transistor The above description is based on the graphyne-made graphyne structure, which allows a current to flow at a high speed of electron movement through the height of one or more schottky barriers other than the channel potential control (silicon transistor type) Or more than one of the bending deformation, the bending deformation, and the movement of the workpiece.

In addition, one or more of bending deformation, position shifting, or the like of Graphyne made of Graphyne is selected so that the transistor which controls at least one work function is different from the conventional transistor By adjusting one or more of the heights of one or more Fermi levels rather than the channel potential control (silicon transistor type), it is possible to block currents at a high electron mobility rate.

Also, one or more of bending deformation, position shifting, etc. of the Graphyne made of Graphyne may be selected so that the transistor controlling at least one work function may be provided with one or more Schottky barriers The height of the barrier, the height of the Fermi level, or the height of the Fermi level, thereby adjusting the work function to at least one of the currents.

Further, it can be understood as a transistor having one or more bending deformation and position shifting of Graphyne made of Graphyne and selecting one or more of them to adjust one or more work function (work function) .

In one embodiment of the present invention, the present invention provides a transistor comprising at least one of at least one bending deformation, a position shift, of Graphyne selected and adjusting at least one Work function.

In one embodiment of the present invention, the present invention includes at least one selected from at least one bending deformation, position shifting of Graphyne to adjust the height of the Schottky Barrier Function). ≪ / RTI >

In one embodiment of the present invention, the present invention includes at least one selected from at least one bending deformation, position shift, or the like of Graphyne to adjust the height of the Fermi level (Fermi level) Function). ≪ / RTI >

In one embodiment of the present invention, the present invention utilizes the curvature characteristics of Graphyne to select one or more Piezo material, magnetic particles, charged particles, or charged particles, One or more of a Piezo material, a magnetic particle, a particle having a charge, or a particle having a charge due to an electrostatic level of an intersecting barrier regulating circuit having at least one transistor at the bottom of the Graphyne Provides one or more transistors that control one or more of the work functions by selecting one or more of bending, locating, and / or graffing the graphyne.

In one embodiment of the present invention, the present invention provides one or more of a Piezo (piezoe) material, a magnetic particle, a charged particle, or a charged particle, selected at the lower end of the Graphyne The electrostatic level of the intersecting barrier regulating circuit causes one or more Piezo particles, magnetic particles, charged particles, or charged particles to be selected from one or more of the graphynes, , And position shifting, so that one or more of the Schottky barriers can be adjusted by adjusting one or more heights of the Schottky barrier to adjust one or more work functions. One or more Schottky Barriers may have one or more Schottky Barriers at one or more elevations due to the selection of one or more Piezo material, magnetic particles, charged particles, or charged particles. , Which can be used to adjust one or more work functions by adjusting one or more of the height of one or more Fermi levels (Fermi level). This can be controlled by the electrostatic level of the crossing circuit (barrier adjustment) at the top. Such a configuration may include one or more bending deformation of at least one graphyne having at least one selected from Piezo (piezoe) material, magnetic particles, charged particles, or charged particles, Of the at least one of the one or more Schottky barriers, the Fermi level, the graphyne to which one or more of the bending deformation, Or < / RTI > This allows us to develop transistors using the fast conductivity of Graphyne, and we can use Graphyne to create enough vacuum gaps, gaps (which can mean gaps, for example insulating layers), air a gap (air gap), a vacuum layer, and an air layer.

In one embodiment of the present invention, the present invention relates to a process for the production of at least one of a Piezo material, a magnetic particle, a charged particle or a charged particle, wherein at least one selected from Graphyne is at least one bending deformation, Position shifting, and one or more of a Schottky barrier to adjust at least one height of a Schottky barrier to adjust one or more work functions.

In one embodiment of the present invention, the present invention relates to a process for the production of at least one of a Piezo material, a magnetic particle, a charged particle or a charged particle, wherein at least one selected from Graphyne is at least one bending deformation, Position shifting, and one or more of a work function (work function) by adjusting one or more heights of one or more Fermi levels (Fermi level).

In one embodiment of the present invention, the present invention utilizes the curvature characteristics of Graphyne to select one or more Piezo material, magnetic particles, charged particles, or charged particles, One or more of a Piezo material, a magnetic particle, a particle having a charge, or a particle having a charge due to an electrostatic level of an intersecting barrier regulating circuit having at least one transistor at the bottom of the Graphyne And at least one of a bending deformation, a position shifting, and a graphene (Graphyne) is selected.

In one embodiment of the present invention, one or more of the Piezo material, the magnetic particle, the charged particle, or the charged particle is selected from one or more bend strains, (Graphyne), even when the upper end of the graphyne is provided with an adhesive material, an elastomer, a liquid polymer, a non-conductor, and an insulator (insulating layer) Transformation, position movement, and so on.

In one embodiment of the present invention, transcription technology, lithography techniques can be used to provide Graphyne, and in order to make crossed circuits, it is possible to fabricate using conventional semiconductor manufacturing techniques such as overlay technology Yes. In one embodiment of the present invention, in transferring Graphyne, one or more magnetic particles may be transferred together to form a circuit.

In an exemplary embodiment of the present invention, a vacuum layer and an air layer (air layer) may be provided as a disassembly layer, and the disassembly layer may be used in a conventional semiconductor process Disintegration layer.

In one embodiment of the present invention, one or more of the upper portions of Graphyne, where one or more of Piezo, Magnetic, Charged, or Charged, (At least one Schottky barrier), a Fermi level (a Fermi level), or a combination of at least two bending deformations in a multi-layer state in which a conductive material, an adhesive, an elastomer, a liquid polymer, And a transistor that adjusts one or more work functions by adjusting one or more of the heights of the selected ones. This may mean that in the drawing, the adhesive material, the elastomer, the liquid polymer, the non-conductive material, the insulator (insulating layer), or the like is connected to the passage.

In one embodiment of the present invention, the bending strain may be described as Young's modulus. In one embodiment of the present invention, the bending deformation is selected from one or more of a curvature radius 1/2 R value (a thin film, an ultra thin film, and a carbide thin film whose surface strain is determined by dividing by the curvature radius r which is related to the bending) As shown in FIG.

In one embodiment of the invention, the magnetic particles mean one or more nanomagnetic particles.

      In one embodiment of the present invention, the magnetic particles should be understood to include all synthetic materials having a Magnet character.

      In one embodiment of the present invention, the magnetic particles should be understood to include all nanocomposites having a Magnet character.

In one embodiment of the present invention, one or more of the Piezo material, the magnetic particle, the charged particle, or the charged particle is selected from one or more bend strains, May include one or more complex shapes or more than one layout related to the nonlinear elastic physical principles, and the more the at least one initial prestrain size? One or more complex one or more forms, one or more layouts selected.

In one embodiment of the present invention, one or more of the Piezo material, the magnetic particle, the charged particle, or the charged particle is selected from one or more bend strains, One or more of the set bending dynamics of one or more of thin film, ultra thin film, and carbide thin film whose surface strain is determined by dividing the bending radius by the curvature radius (r) , Combinatorics (Combinatorics), Geometry (Geometry), Groups (Group), and Control.

In one embodiment of the present invention, one or more of the Piezo material, the magnetic particle, the charged particle, or the charged particle is selected from one or more bend strains, At least one bending moment <M> in at least one layer having at least one selected from among at least one layer selected from at least one of regular, irregular, uniform, heterogeneous, It can be selected from one or more of three dimensional, n dimensional, and one or more same, non-identical, whole, partial, continuous, non-continuous, set theory, Combinatorics, Geometry, ), And adjustment are obtained from one or more curvatures that are selected from one or more curvatures, which may be one or more identical, non-uniform, set theory, Combinatorics, ), The second derivative of at least one <u> comprising Group (Group), one or more to be selected one or more of.

In one embodiment of the invention, one or more of at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, and at least one of Graphyne, And may be optionally compatible with one or more of the prior art electronic device manufacturing processes.

In one embodiment of the present invention, one or more of the Piezo material, the magnetic particle, the charged particle, or the charged particle is selected from one or more bend strains, Is performed in one or more planes and, in one embodiment of the invention, may be optionally compatible with one or more of the prior art electronic device manufacturing processes.

      In one embodiment of the present invention, one or more of Piezo (piezoe) material, magnetic particles, charged particles, or charged particles, for use in applications requiring a non-linear configuration, The selection of at least one of Graphine's bending deformation and position shifting is selected so that it can have a shape that can overcome the geometric limit made in plane.

In one embodiment of the present invention, one or more of the Piezo material, the magnetic particle, the charged particle, or the charged particle is selected from one or more bend strains, Quot; is selected relative to the surface having at least one positive curvature, it is also possible to have at least one negative curvature.

In one embodiment of the present invention, one or more of the Piezo material, the magnetic particle, the charged particle, or the charged particle is selected from one or more bend strains, May have one or more non-coplanar faces and may have one or more interconnected shapes.

In one embodiment of the invention, one or more of the graphynes may be provided with a process that diffuses into one or more carrier media, such as one or more carrier fluids.

In one embodiment of the present invention, at least one graphyne having at least one selected from magnetic particles, particles having electric charges, or particles having electric charges selected at the bottom thereof is subjected to at least one bending deformation, The fact that the above is selected is described as mobility.

      In one embodiment of the present invention, the mobility is defined as the ratio of particles having charge, such as ions, electrons, colloidal particles, etc., selected from the air layer, the vacuum layer, the gas layer, the liquid layer, Is a coefficient u defined by the relationship v = uE between the mean moving velocity v and the magnitude E of the electric field. It is established only when the electric field intensity is not large, and the unit of u is cm2 s-1 V-1. In one embodiment of the present invention, this proportional relationship is established when E is not very large, and in an isotropic medium, u is a scalar constant. The unit of u is cm2 s-1 V-1. In particular, when it is distinguished from the Hall mobility, it is called the flow mobility. When the number of particles per unit volume is n, and the charge of the particles is e, the electric conductivity σ according to the motion of the particles is σ = neu. The diffusion coefficient D of a particle is generally defined by Einstein's relation u = eD / kT, where k is a Boltzmann constant and T is an absolute temperature.

In one embodiment of the invention, mobility refers to the reciprocal of the impedance. The complex ratio of a point to a point of a single vibrating mechanical system or to a point at another point is called the motion. (1) When the particles carrying charge in the whole field of intensity E are subjected to force, the ratio V / E of the average moving velocity V and E is called the mobility. (2) A type of frequency response function, which is the ratio of the velocity of a point to the excitation force of such point or other point. It is the inverse of the mechanical impedance and is a complex function of frequency.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, The bending mechanics of Graphyne that occurs when at least one of bending deformation, position shifting, etc. is selected can be achieved by one or more Piezo material, magnetic particles, particles having charge or charged particles, It can be understood that Graphyne has a Young's modulus in comparison with that selected above.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, (1) a range of not less than 1 micrometer but not more than 100 micrometers, and (2) a range of not less than 0.1 nanometer but not more than 100 nanometers. May have a range selected from one or more of the above (1) to (2).

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, One or more of the transistors of the present invention may be provided with a modified isolation layer (e.g., selected from a vacuum layer and an air layer) that is free from deformation that occurs when at least one of bending, .

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, and position shifting can be obtained by selecting at least one of a thin film, an ultra thin film, and a hard thin film whose surface strain is determined by dividing by the curvature radius r which is related to the bending, Can be interpreted as.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, (E.g., a sufficiently rigid structure) in order to avoid lethal deformation such as peeling, which may occur when one or more of the bending deformation, bending deformation, . In one embodiment of the present invention, one or more of the Piezo particles, the magnetic particles, the charged particles, or the charged particles, Ideal bending deformation, positional displacement, or the like may be provided in a geometric shape.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like can be understood as having at least one of at least one multi-layer structure, at least one of at least one selected, and at least one bending deformation, .

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like, and adjusting at least one height of the selected one or more of at least one Schottky barrier (Schottky barrier), Fermi level (Fermi level) , But in an embodiment of the present invention, it can be influenced by the area where deformation does not occur.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, and adjusting at least one height of the selected one or more of one or more Schottky Barrier, Fermi level, Respectively. In one embodiment of the present invention, having at least one of more than one bending deformation, locating, or the like of one or more graphynes may be interpreted as having spatially uniform characteristics. The spatially uniform properties and the spatially uniform properties are described as (plane-strain) coefficients. In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Adjusting at least one height of at least one selected from one or more of Schottky Barrier, Fermi level, having at least one of bending deformation, position shifting selected, At least one spatially uniform property, at least one spatially uniform property, and at least one spatially uniform property.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like is selected as the distance (d) at which deformation occurs from the upper surface.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like is explained by the bending dynamics of the composite beam (or beam or plate) having at least one bending stiffness and effective elongation.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, (At least one bending energy, at least one of the bending energy, the axial force F being selected) of one or more of the bending moments < RTI ID = 0.0 > One or more out-of-plane displacements that include one or more of at least one of non-identical, global, partial, persistent, non-persistent, set theory, Combinatorics, geometry, lt; u &gt;. Its strain energy is also obtained in terms of <u>. In addition, the displacement &lt; u &gt; extends to the Fourier series with the coefficients to be determined by minimizing the total energy. In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, and position shifting are obtained from one or more curvatures, which may be one or more identical, non-identical, whole, partial, continuous, non-continuous, set theory, Combinatorics, , Geometry, Group, and Adjustment, which are one or more selected from one or more of <u> and <u>.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Adjusting at least one height of a selected one or more of at least one of a Schottky barrier and a Fermi level by selecting at least one of bending, One or more of which may be selected from one or more, one or more selected from among, one or more selected from one or more selected from the group consisting of: One or more of the above selected at least one of, close to, adjoining, adjacently located adjacent to, sufficiently close to, closely attached means that at least one of 100 m, 1 m, 100 nm, , And physical dimensions. In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like is defined as being selected from at least one of a mathematical value less than a selected numerical value of at least one of 10 탆, 1 탆, 100 nm, 1 nm, and physical dimensions.

In one embodiment of the present invention, the transistor of the present invention comprises one or more graphene (s) having at least one selected from one or more of Piezo, Magnetic, Charged, or Charged, (Schmitky Barrier), Fermi level (Fermi level) with at least one selected from the group consisting of at least one bending deformation, Sufficient rigid material can be used to protect the strain sensitive layer that occurs when the &lt; RTI ID = 0.0 &gt;

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like may be selected from the group consisting of bending deformation in the range of one or more selected from the range of 25%, 20%, 10%, 25% to 0.1% Position shifting, and / or position shifting.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, and position shifting may be selected from one or more of multi-layered structure, single, or more selected from among equivalent tensile strength and equivalent bending strength. .

In one embodiment of the present invention, one or more disintegration layers are selected from one or more of one or more polymethyl methacrylate (PMMA), one or more of which are selected from one or more of splitting, Or more.

In one embodiment of the present invention, the manufacturing method of the present invention includes one or more stationary and support structures (e.g., semiconductors) to enable high accuracy lift-off printing elements, such as electronic component arrangements or pattern arrangements of elements a fixture may be provided.

In one embodiment of the present invention, one or more of the adhesive layer, the adhesive region, and the adhesive material may mean a bonding force that is less than the bonding force of the adhesive region, adhesive, or bonding precursor selected in the present invention.

In one embodiment of the present invention, it may mean that at least one of the adhesive layer, the adhesive region, the adhesive material is provided to be selected from at least one of an adhesive region, an adhesive, and an adhesive precursor.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like may include at least one selected from one or more structures, shapes, and components satisfying one or more finite element simulations. In one embodiment of the present invention, the finite element simulation may be performed with an element having a choice of one or more 8-node, 4-node elements. In one embodiment of the present invention, the finite element simulation may represent a similar membrane strain pattern. In one embodiment of the present invention, the finite element simulation is performed using one or more finite element method (FEM), finite difference method (FDM), finite volume method, Taguchi method ), And a robust design.

In one embodiment of the present invention, the transistor of the present invention may use an alignment maintaining element to fabricate the transistor of the present invention.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like may be provided with one or more buckling deformations. In one embodiment of the present invention, one or more buckling deformations may occur such that a small number of wavelengths are fused together.

In one embodiment of the present invention, one or more graphynes provided on top of one or more of Piezo (piezo) material, magnetic particles, particles with charge or charged particles, Or more of a piezoelectric material, a magnetic particle, a particle having a charge, or a particle having a charge.

In one embodiment of the present invention, the transistor of the present invention comprises: a. For one or more non-coplanar designs of Graphyne, b. At least one graphine having at least one selected from the group consisting of at least one Piezo substance, magnetic particles, particles having electric charge, or particles having electric charge is selected from one or more bending deformation, One or more of the manufacturing methods proposed in the present invention may be used for the purpose of selecting at least one of the above-mentioned a to b constituted by:

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like can be selected from one or more of dots, ribbons, nano ribbons, strips, waveforms, hills, small faces, small lines, A surface, a line, or the like.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position movement, or the like can be selected as follows. In one embodiment of the present invention, at least one graphyne is one or more of 1). Graphyne, 2). A form in which a conductive material is provided at a portion where the graphyne and the graphyne are connected to the drain; Graphyne and a conductive material having a multi-layered structure but capable of being provided with bending deformation; 5) Graphyne and Young's modulus materials have multi-layered structure, but can have bending deformation. The conductive material of Graphyne and Young's modulus may be selected from among the above 1) to 5) composed of a conductive material having a multi-layered state, but having a bending deformation, Various modifications can be made in terms of taking advantage of the fact that graphyne is not destroyed by its excellent conductivity and large mechanical deformation and that conductivity does not change even with large mechanical deformation. In one embodiment of the present invention, the conductive material may mean a conductive material in one or more atomic forms or in the form of a molecule. In one embodiment of the present invention, the conductive material may refer to a conducting polymer.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like is selected a. A deformation thickness of about 0.1 nanometers to 100 micrometers, b. The deformation width is approximately 1 nanometer to 1 millimeter c. A strain length of about 1 nanometer to 100 micrometers, d. Deformation length greater than or equal to 1 micrometer, e. Deformation width not less than 1 micrometer, f. Microstrip strain (340 nanometers in thickness, 5 micrometers wide, 1 millimeter or less in length), g. Deformation intervals (more than 1 micrometer or less), h. One of which is selected from one or more of at least one of a deformation length, a deformation width, a deformation area, a deformation volume, a deformation width, a deformation height, a deformation thickness, a deformation sectional area, a deformation interval, a surface roughness, a surface deformation range, And a to h, each of which has a physical dimension of 0.1 nanometer to 200 micrometer, but it is not limited to the one or more physical dimensions but may be one or more.

In one embodiment of the present invention, (a) at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle is selected. Including less than 4 to 20 ppma (parts per million atoms), (b). An inclusion of less than about 1 to less than 4 ppma per million atoms, (c). Including less than about 1 ppma, (d). (E) an inclusion angle of not more than about 100 ppba (parts per billion atoms), preferably for some products; More preferably at least about 1 ppba inclusions for some products. (f). More preferably, one or more selected from the range of inclusions below about 1 to 10 ppba for some products, (g). (H) more preferably at least one of a range of inclusions of less than or equal to about 1 to 10 parts per million by volume for some products. (A) to (h) consisting of one or more selected from the range of inclusions below about 1 to 10 ppbv (parts per billion by volume), more preferably for some products. Or more.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like is selected a. At least one deviation from an average surface location of less than 100 nanometers; b. Preferably one or more deviations at an average surface location of less than one ten nanometers, c. More preferably one or more deviations at an average surface location of less than one nanometer, d. More preferably one or more deviations at an average surface position of at least one Angstrom or more, for some products, and at least one selected from the above a to d constituted by.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, The bending deformation, the bending deformation, the bending deformation, the bending deformation, the bending deformation, the bending deformation, the bending deformation, the bending deformation, and the bending deformation.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, and position movement can be selected from one or more sine waves, Gaussian waves, Lorentzian waves, periodic waves, acyclic waves, Or a wave form in which at least one of the wave forms is selected.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Wherein at least one selected from the group consisting of at least one of a sine wave, a bending deformation, and a position movement is one or more of a sine wave, a Gaussian wave, a Lorentzian wave, a periodic wave and an aperiodic wave, The wave shape may be selected from one or more of bending deformation, position deformation, and one or more bending deformation, position deformation, May be provided in wave form. In one embodiment of the present invention, at least one of the Piezo material, the magnetic particles, the particles having charge, or the particles having charge, One or more of bending deformation and position movement may be provided in the form of at least one selected from at least one of a sine wave, a Gaussian wave, a Lorentzian wave, a periodic wave, and an aperiodic wave, .

In one embodiment of the invention, one or more of at least one of Graphyne and one or more Piezo materials, magnetic particles, charged particles, or charged particles is selected from the group consisting of "bottom-up" One or more process platforms that facilitate the fabrication of functional devices that exhibit enhanced reliability with respect to semiconductor material-based devices produced by "process technology. &Quot; In addition, the reliability is indicative of the performance of functional devices to exhibit good electronic properties over extended operating periods, and is based on a piece-to-piece design of the overall electrical characteristics of devices manufactured using the methods and compositions of the present invention. piece) uniformity.

In one embodiment of the present invention, at least one of Graphyne and one or more Piezo materials, magnetic particles, charged particles, or charged particles is selected from a "top-down" process technique One or more process platforms that facilitate fabrication of functional devices that exhibit enhanced reliability with respect to semiconductor material-based devices produced by the process.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like is selected a. A configuration in which one or more electrodes are in electrical contact with at least one of the first and second electrodes without being in physical contact with one another (e.g., closely attached or non-overlapping); b. At least one physical contact and at least one electrical contact with at least one of the first and second electrodes, c. It is understood that at least one of a to c, which is constituted by at least one electrically contacting one or more first and second electrodes, is selected.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, It is understood that at least one of the bending deformation, the position movement, and the like may be selected to include at least one selected from at least one bending deformation and at least one bending deformation of at least one graphyne in the form of having at least one inclination .

In one embodiment of the present invention, a transistor having at least one of bending strain, position shifting, etc. of Graphyne selected and adjusting at least one of the work function (s) comprises: a. Using the curvature properties of Graphyne, one or more of Piezo, Magnetic, Charged, or Charged particles can be selected at the bottom of Graphyne, Due to the electrostatic level of the intersecting barrier-regulating circuit, one or more Piezo particles, magnetic particles, charged particles, or charged particles may be selected from one or more of Graphyne Bending deformation, position movement, or one or more of the work function (b), b. One or more of a height of at least one Schottky barrier (at least one Fermi level), at least one height of at least one Fermi level (at a Fermi level), and a work function And a transistor for regulating abnormality. A transistor having at least one of bending deformation and position movement of the graphine selected to control at least one work function includes a CPU, a memory, a semiconductor integrated circuit, a microprocessor, and a battery One or more of one-dimensional, two-dimensional, or three-dimensional, one or more of which is selected from at least one of an electronic device, an electronic device, and an electronic device.

In one embodiment of the present invention, a transistor having at least one of bending deformation, position shifting, etc. of Graphyne selected and adjusting at least one of the work function (work function) is a CPU, memory, semiconductor integrated circuit , One or more one or more one-dimensional, two-dimensional, three-dimensional, or one or more selected from among at least one selected from the group consisting of a microprocessor, an electronic device having a battery, .

In one embodiment of the present invention, a transistor having at least one of bending strain, position shifting, etc. of Graphyne selected and adjusting at least one of the work function (s) comprises: a. Using the curvature properties of Graphyne, one or more of Piezo, Magnetic, Charged, or Charged particles can be selected at the bottom of Graphyne, Due to the electrostatic level of the intersecting barrier-regulating circuit, one or more Piezo particles, magnetic particles, charged particles, or charged particles may be selected from one or more of Graphyne Bending deformation, position movement, or one or more of the work function (b), b. Having at least one selected from the group consisting of at least one height adjustment of one or more Schottky Barriers, at least one height adjustment of one or more Fermi levels (Fermi level), and one or more Schottky Barrier ) One or more Fermi levels (Fermi level), one or more of which may be at least one selected from the group consisting of at least one graphine (Graphyne) with more than one bending One or more of the one or more of the at least one Fermi level (Fermi level), one or more of the at least one Schottky barrier, the at least one Fermi level, May be provided. In addition, one or more of Piezo, Magnetic, Charged, or Charged particles may be selected from one or more of Graphine, bending deformation, Select one or more of the one or more Schottky Barriers to adjust the height of one or more barriers, one or more Fermi levels to adjust the height of one or more Fermi levels, It can be interpreted as helping to control more than one.

In one embodiment of the present invention, a transistor having at least one of bending strain, position shifting, etc. of Graphyne selected and adjusting at least one of the work function (s) comprises: a. Using the curvature properties of Graphyne, one or more of Piezo, Magnetic, Charged, or Charged particles can be selected at the bottom of Graphyne, Due to the electrostatic level of the intersecting barrier-regulating circuit, one or more Piezo particles, magnetic particles, charged particles, or charged particles may be selected from one or more of Graphyne Adjusting more than one work function by selecting one or more of ideal bending deformation and position shifting can be designed considering Fermi-level pinning (Fermi level pinning).

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, One or more of Piezo material, magnetic particle, charged particle, or charged particle is selected from one or more of Graphyne, And one or more contact angles (Contect Angle). The important point is that it has one or more of Graphyne and Contect Angle and it adjusts the height of one or more of the selected one or more Schottky Barrier, Fermi level, And a transistor for adjusting at least one work function. In one embodiment of the invention, the at least one contact angle (Contect Angle) is determined by one or more of the magnetic particles contacting one or more of the point contacts, the face contacts, the round contacts, the point contacts of the regular shape, the point contacts of the irregular shapes, One or more of Graphyne's lines may be selected from one or more of line contact, irregular line contact, regular contact, irregular contact, irregular contact, irregular contact, One or more of bending deformation, position shifting, or the like may be selected. In one embodiment of the present invention, the at least one graphyne and one or more contact angles refer to one or more contact angles in the nano unit.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like can be described as continuum dynamics. In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like can be described as an elastic body. In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like can be introduced by introducing continuum mechanics into one or more bending theories.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, and position movement can be defined as having elasticity and having at least one of at least one selected from bending deformation and position shifting, and elasticity refers to a force applied to an object When the object disappears, it is a property that the object wants to be restored to its original shape.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, and positional movement can be selected in a multi-layered state, that is, an adhesive material, an elastomer, a liquid polymer, an insulator, and an insulator (insulating layer) are provided together at the upper end of Graphyne And at least one of at least one bending deformation, position movement, or the like is selected. The elasticity of the multi-layer state can be understood as having at least one Young's modulus.

In one embodiment of the present invention, continuum mechanics is based on the concept of a continuum assuming that each element retains the properties of the material as a whole as it is, even though it is infinitely divided into smaller elements. In fact, it is ignored that the material is composed of atoms, not continuous, and thus has a heterogeneous microstructure. In one embodiment of the present invention, it is assumed that the continuum is uniformly distributed in the object, completely occupies the space occupied by the object, and thus the physical quantities such as energy and momentum are maintained at the minimum. In one embodiment of the present invention, continuum mechanics can use differential equations to describe the present invention.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, etc. In the embodiment of the present invention, although one or more of the above is selected as the lower portion in the drawing, in one embodiment of the present invention, one or more grains are provided on the top of the graphyne, ) May be one or more selected from at least one of bending deformation, position shifting, and the like. Also, in one embodiment of the present invention, one or more of the at least one side of Graphyne may be provided with at least one of bending deformation, have. Also, in one embodiment of the present invention, one or more side surfaces of at least one graphyne may be provided so that one or more of graphyne's lower one or more bending deformation, positional movements are selected. Therefore, it should be understood that the term 'lower' in the present invention can be construed to mean inclusive of those provided on the upper side and the side, and an important point is that, when the graphyne has one or more bending deformation, Is selected.

In one embodiment of the present invention, a transistor (I) having at least one bending deformation, locating, or the like of Graphyne selected and having at least one selected to control at least one of the work function. One or more processing, deposition, sputter deposition, cathodic arc deposition, electron beam physical vapor deposition, evaporation deposition, pulsed laser deposition, vibration deposition, mask, optical filter, masking, etching, isotropic etching, anisotropic etching, wet etching, patterning, side patterning Printing, 3D printing, sample rotation, tilt, oxidation, roller, casting, nano casting, printing, casting, curing, solidification, floatation, overprinting, overlay, Curing, molding, circuit lifting, mixing, filling, van der Waals force, encapsulation, METAL (metal), heat treatment, pressing, roll pressing, polishing, preliminary deformation, series of trenches, , CLEAN, IMP, DIFF, PHOTO, CVD, CMP, DEPOSITION, ANNEALING, WET, Etching, laser, welding, condensation, FUSI, double diffusion, packaging, Bangding Wire, Wide Bonding, Soldering, Wave Soldering, BRAZING, Lift Off, Material Growth, Doping, Coating, Evaporation, Immersion, Metal Evaporation , Lithography, lithography, shape etching, metal deposition, insulating film, and the like can be used as the material for forming the insulating film, (Focused on ion beam) process, removal, HMDS, BOE, spin-on-dopant, PECVD, RIE, plasma treatment, HF , Spin coating, ultraviolet ozone treatment, PR pattern, PR removal, acetone cleaning, ethanol washing, fusion, UVO treatment, array manufacturing, electron beam, ion beam, molding, ultrasonic, light, exposure, light, Optical tweezers), reflow phenomenon, plasma, adhesion, electrostatic force, At least one stationary and supporting structure, such as a sphere, a sperm, a sperm, a sound wave, a squeeze, a compression, an electromagnetic wave, a transformation, a high frequency, a penetration, a diffusion, a scattering, DNA chain folding, arrangement, placement, synthesis, linking, lamination, shaping, assembling, assembling, shaping, positioning, fixation, non-bonding, bonding, injection, attachment, contact, adhesion, meniscus principle , Self-assembled monolayer, Niemeyer-Dolan technique, tunnel junction, intersection, close-up, close-up, close-up, pattern, Virtually any type of spatially controlled semiconductor process to be carried out in a separate manufacturing step from the manufacturing step, the integration, the incidence, the positioning process, the solution printing, The selected one or more rooms The law (for example, said aggregation means one or more aggregations), Ⅰ. (a) one or more selected from one or more dimensions, two-dimensional, three-dimensional or n-dimensional, (b) one or more directions, (c) one or more continuous or non- (e) one or more of (a) to (e) consisting of at least one of (a) at least one of Or more, and Ⅱ. At least one of (a) to (e) above is selected from the above I, wherein (a). Each of the one or more methods selected is a spatially controlled characteristic of one or more processes having at least one substantially any type of spatially controlled semiconductor process to be performed in a separate manufacturing step from the manufacturing step; The duration of each of said one or more methods selected, ⓒ. The temperature of the environment to which each of the at least one selected method is applied; The pressure of the environment to which each of the above selected one or more methods applies; The power of the environment to which each of the selected one or more methods is applied; The concentration of one or more of the gases, liquids, and solids in the environment to which each of the selected methods is applied; A space to which each of the selected one or more methods is applied; Wherein at least one of (a) to (e) is selected from one or more of (a) to (e). At least one selected method in (I) above, One or more one dimensional, two dimensional, three dimensional, or n dimensional. In more than one direction, ③. One or more of the persistent, non-persistent, or more than one is selected. ⑤ More than one of the whole or partial is selected. One or more of the above-mentioned (1) to (5), which is selected from one or more of regular, irregular, uniform, irregular and porous, is selected.

In one embodiment of the invention, one or more of Piezo (piezoe) material, magnetic particle, charged particle, or charged particle, and at least one graphyne at the top The following manufacturing method may be provided. (One). Polymethyl methacrylate (PMMA) or the like is coated on Graphine. (2). X-rays of the synchrotron radiation are irradiated through the mask. (3). The polymer in the portion irradiated with x-rays is easily dissolved in the developer (solvent) due to breakage of the chemical bond. (4) has a barrier regulating circuit which intersects the upper part. (5). The polymethylmethacrylate (PMMA) layer is dissolved in the solvent. (1), (1) to (5), and the like.

In one embodiment of the invention, one or more of Piezo (piezoe) material, magnetic particle, charged particle, or charged particle, and at least one graphyne at the top The following manufacturing method may be provided. (One). Substrate cleaning, (2). Metal deposition, resistor application, (3). Exposure, (4). Phenomenon, (5). Etching (isotropic or anisotropic etching, or wet etching), (6). One or more Piezo material, magnetic particles, charged particles, or charged particles. Resistors, metal removal, (8). Graphyne coating (or printing, or transfer), (9). Polymethyl methacrylate (PMMA) or the like is coated on Graphyne (10). X-rays of the synchrotron radiation are irradiated through the mask. (11). The polymer in the portion irradiated with x-rays is easily dissolved in the developer (solvent) due to breakage of the chemical bond. (12). (13). The polymethylmethacrylate (PMMA) layer is dissolved in the solvent. (1) to (9), and the production method of (1) to (13).

In one embodiment of the invention, one or more of Piezo (piezoe) material, magnetic particle, charged particle, or charged particle, and at least one graphyne at the top The following manufacturing method may be provided. (One). Substrate cleaning, (2). Metal deposition, resistor application, (3). Exposure, (4). Phenomenon, (5). Etching (isotropic or anisotropic etching, or wet etching), (6). One or more Piezo material, magnetic particles, charged particles, or charged particles. Resistors, metal removal, (8). Graphyne coating (or printing, or transfer), (9). (1) to (8), and a manufacturing method of (1) to (9), which are provided on a graphine substrate can do.

In one embodiment of the invention, one or more of Piezo (piezoe) material, magnetic particle, charged particle, or charged particle, and at least one graphyne at the top The photolithography method described below may be provided. (One). Mask fabrication, (2). A photoresist spin coating (positive photoresist or negative photoresist, in this case mainly a positive photoresist), (3). Soft bake, (4). Alignment and exposure, (5). Development, (6). Hard bake, (7). (1) to (7), which are provided with an etching process.

In one embodiment of the invention, nanoparticles (one or more of Piezo material, magnetic particles, charged particles, or charged particles, selected from Graphyne) There may be several ways to arrange them regularly on a solid substrate. (One). A method of dispersing nanoparticles in a volatile organic solvent to evaporate the organic solvent on the substrate to leave only the nanoparticles on the substrate. In order to disperse the nanoparticles in the organic phase, it is necessary to make the surface of the nanoparticles hydrophobic. In one embodiment of the present invention, a self-assembled monolayer (SAM) of dodecane thiol is attached to the surface of the particle to render it hydrophobic. (2). A method in which a substrate is immersed in a nanoparticle solution for several hours and the nanoparticles are adsorbed and collected by physical and chemical interactions between the substrate and the nanoparticles. HOPG (Highly Ordered Pyrolytic Graphite) high pyrolytic graphite) or mica is used as the substrate for arranging the particles. (3). A method of collecting ferromagnetic nanoparticles, such as cobalt superlattice nanoparticles and ferric oxide superconducting nanoparticles, in a magnetic field in the magnetic field in the form of a string in an arrangement by a magnetic field. (4). You can create surfaces using scanning probe microscopy and SAM (self-assembled monolayer) technology. For example, the manufacturing method described in (1) to (4) in which the probe of the atomic force microscope is used as a pen, and the deep-pore nanolithography where only the probe is covered with the nanoparticle is further provided.

In one embodiment of the present invention, due to the electrostatic level of the crossover circuit, which is for adjusting the barrier crossing over one or more graphynes, one or more bending deformation, The adjustment of one or more of the heights of one or more of the Schottky barriers, the Fermi level, or the graphyne to which one or more of the deformations, Equation).

In one embodiment of the present invention, due to the electrostatic level of the crossover circuit, which is for crossing over at least one graphyne, the one or more Piezo material, the magnetic particles, the particles having charge, Grained particles are selected from at least one of bending deformation and positional movement by causing at least one of bending deformation and position deformation of at least one graphyne to be selected, Adjusting one or more of the heights of one or more of Graphyne's Schottky Barrier, Fermi level, or more can be described by a shockley equation.

In one embodiment of the present invention, due to the electrostatic level of the crossover circuit, which is for adjusting the barrier crossing over one or more graphynes, one or more bending deformation, (At least one of Schottky Barrier), Fermi level (Fermi level), or the like, where Graphyne has been selected to be selected from one or more of the work function ) May be provided.

In one embodiment of the present invention, due to the electrostatic level of the crossover circuit for adjusting the barrier across one or more graphynes (with the adhesive layer, van der Waals forces being selected at the bottom) Graphyne having at least one of bending deformation and position movement selected to cause at least one of abnormal bending deformation and position movement to be selected is selected from one or more Schottky Barrier, Fermi level, A transistor may be provided that adjusts one or more work functions by adjusting one or more heights of one or more selected ones.

In one embodiment of the present invention, one or more of the following materials may be used: Graphyne (one or more Piezo materials, magnetic particles, particles having charge or charged particles, formation of an adhesive layer beneath, van der Waals forces, One or more bending deformation, and / or positional movement due to the electrostatic level of the intersecting circuit for the barrier adjustment crossing over the upper one or more of the bending deformation, Graphyne has a transistor that adjusts one or more work functions by adjusting one or more of the height of one or more selected Schottky Barrier, Fermi level, can do.

In one embodiment of the invention, 1). The bottom of one or more Graphyne, 2). The top of one or more Graphyne, 3). One of the above 1) to 3) consisting of at least one of Graphyne and at least one of Piezo material, magnetic particle, charged particle or charged particle, The form selected above may be selected from the group consisting of an adhesive layer capable of assisting elastic recovery of Graphyne, elastomer, layer having Young's modulus, which is selected from at least one of bending deformation, However, the present invention is not limited thereto. Also in an embodiment of the present invention, 1). The bottom of one or more Graphyne, 2). (1) to (2), which is composed of at least one of Graphyne and at least one of Piezo material, magnetic particle, charged particle or charged particle, The shape may be a layer having an adhesive layer capable of assisting elastic recovery of Graphyne, an elastomer, a Van der Waals force, a Young's modulus, or the like, wherein at least one of bending deformation, But the present invention is not limited thereto.

In one embodiment of the present invention, at least one of the Piezo material, the magnetic particle, the charged particle, or the charged particle is selected on top of one or more graphynes One or more of bending deformation, position movement, or the like of the graphyne is selected in a multi-layer state in which a conductive material, a non-conductive material, an adhesive material, an elastomer, a liquid polymer, , And has a transistor that adjusts one or more work functions by adjusting one or more of the heights of one or more of a Schottky barrier, a Fermi level, and the like. This may mean that in the figure the selected material of the adhesive material, elastomer, liquid polymer, non-conductor, insulating layer leads to the passage. In one embodiment of the present invention, Figure 300 of the present invention may mean 300 in a multi-layered state.

In one embodiment of the invention, at least one graphyne with at least one selected from one or more of Piezo (piezo) material, magnetic particles, charged particles, or charged particles, Graphyne, which is caused to cause at least one of bending deformation, position movement to be selected and to be selected from at least one of bending deformation and position movement, is selected from one or more Schottky Barrier, Fermi level, In adjusting one or more of the heights above the selected one, the Fermi level is a. If the state (shape or shape) and electrons are supplied at a higher level than the Fermi level, the Fermi level is raised. b. It provides a state (shape or shape) and electrons at a higher level than the Fermi level. c. Distort Graphine spatially, but simultaneously provide electrons, d. And at least one selected from the group consisting of a to d composed of spatially distorting Graphine and providing the state (shape or shape) and electrons at the same time.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like is selected a. At least one deviation in average surface position of less than 1 micrometer; b. Preferably at least one deviation at an average surface location of less than one hundred nanometers, c. Preferably one or more deviations at an average surface location of less than one ten nanometers, and d. Preferably one or more deviations at an average surface location of less than one nanometer, e. More preferably at least one deviation from an average surface position of at least 1 Angstrom for some products, and at least one selected from the above a to e constituted by.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like is provided with elasticity of at least one Graphyne. The elasticity is an intrinsic property of Graphyne and may be referred to as returning one or more shape modifications of Graphyne after one or more of the one or more bending deformation, . It can be understood that the elasticity has Young's modulus.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, The bending deformation and the position movement are selected from at least one of a regular, irregular, uniform, non-uniform, and porous structure in which the surface area for increasing the contact area is selected from one or more one dimensional, two dimensional, One or more selected from among the following. In one embodiment of the present invention, one or more "surface textures" can be used collectively to refer to any form that actively appears in an increased surface area. In one embodiment of the present invention, one or more "Surface texture" may be one or more of internal or external, and may include one or more of a relief feature or another surface roughness .

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like has at least one surface roughness. In one embodiment of the present invention, the surface roughness is defined as (a). One micrometer rms (root mean square) or less; 100 nm rms (root mean square) or less, and (c). A range of at least one of 10 nm rms (Root mean square) or less, (d). 1 nm rms (root mean square) or less; (A) to (e) consisting of at least one selected from a range of at least 0.1 nm rms (root mean square).

In one embodiment of the present invention, the Young's modulus is in the range of 0.1 MPa or more to 50 MPa or less, 100 MPa or less, at least 5 MPa or more, 1 MPa or more, or 0.1 MPa or more and 100 MPa or less modulus), but is not limited thereto.

In one embodiment of the present invention, Young's modulus refers to Young's modulus of Graphyne. In one embodiment of the present invention, the Young's modulus is at least one Young's modulus in a multi-layered form that is comprised of at least one selected from Graphyne or Graphyne and Upper, Lower, And the like. In one embodiment of the present invention, a layer provided at a selected location on at least one of the top, bottom, or at least one of the at least one Graphyne, as compared to one or more Graphyne, May be referred to as a layer having a Young's modulus. In one embodiment of the present invention, a low Young's modulus may mean a layer having a Young's modulus of 100 MPa or less, 10 MPa or less, 5 MPa or less or 1 MPa or less, but is not limited thereto. In one embodiment of the present invention, the Young's modulus is lower than the Young's modulus of the layer provided inside of the radius of curvature that occurs during bending, in which at least one layer is provided with the at least one layer. And the like. In one embodiment of the invention, the Young's modulus is at least equal to the Young's modulus (at least one of the Piezo material, the magnetic particle, the charged particle or the charged particle, Young's modulus).

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position movement, or both (a). (B) One or more cross - sectional areas of less than 1 micrometer, longitudinal cross - section, cross - section more than one direction, cross - sectional area. A cross section of 500 nanometers or less, a longitudinal section, a cross section of more than one direction, or a cross section; (c). (D) One or more cross - sections of more than 1 micrometer, longitudinal cross - section, cross - section more than one direction, cross - sectional area. At least one of a cross section of 500 nanometers or more, a longitudinal section, a cross section of more than one direction, or a cross section is selected; (e). One or more of a cross section of 100 nanometers or more, a longitudinal section, a cross section of more than one direction, or a cross section, (f). A cross section of 10 nanometers or more, a longitudinal section, a cross section of more than one direction, or a cross section is selected, (g). One or more cross - sections of 1 nanometer or more, longitudinal cross - section, cross - section more than one direction, cross - sectional area, (h). (A) to (h) consisting of a cross section of 0.1 nm or more, a longitudinal section, a cross section of more than one direction, or a cross section. In one embodiment of the present invention, one or more of the Piezo material, the magnetic particle, the charged particle, or the charged particle, which is not limited to the one or more physical dimensions, And at least one of Graphyne, bending deformation, and positional movement may be selected.

In one embodiment of the present invention, the uniqueness of one or more of the Piezo particles, the magnetic particles, the charged particles, or the charged particles, One flexibility is that of providing one or more Piezo materials, magnetic particles, charged particles, or charged particles in various forms provided for a number of available device arrangements that are not possible with conventional fragile silicon- One or more selected graphynes and one or more graphynes may be provided. It is also possible to have at least one selected from processable constituent materials and at least one of Graphyne and at least one Piezo material, magnetic particles, charged particles or charged particles. In one embodiment of the present invention, at least one of the Piezo material, the magnetic particle, the charged particle, or the charged particle, and at least one of the grains disposed below, To produce electronic devices in large substrate areas.

In one embodiment of the present invention, a device is provided that includes at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, and at least one graphyne It may be provided with one or more manufacturing methods of one or more transfer printing.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, One or more of the bending deformation, position shifting, or the like is selected to induce a severe deformation such as one or more of the one or more deformations that characterize the failure point, one or more mechanical impacts that characterize the failure point, And the like.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position movement, or both (a). The strain is about 25%, (b). Strain less than about 25%, (c). Strain less than about 10%, (d). (A) to (e), wherein the strain to be applied is preferably selected to be less than about 1%, (e) more preferably less than about 0.5% At least one of a Schottky barrier, a Fermi level, or the like, having at least one of bending deformation, position shifting, , But the strains presented on one side are not limited to about 25%, and one or more of the Schottky Barrier, Fermi level, Sufficient strain can be provided.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, The electrostatic levels of the intersecting barrier regulating circuit comprising one or more of bending deformation, position shifting, etc., may be provided in the form of a pulse or hertz, such as terahertz, gigahertz, megahertz, etc., or derived from pulses or Hertz .

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like may be understood as one or more spacing of the at least one Graphyne (first electrode) with the conductive material (second electrode).

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, and position shifting can be selected from at least one of not less than about 0.1%, at least about 1%, at least about 10%, at least about 25% But is not limited thereto.

In one embodiment of the invention, one or more of Piezo, Magnetic, charged or charged particles are selected and one or more of Graphyne, The barrier regulating circuit which crosses over the top of Graphyne can be patterned more than once by the manufacturing method presented in the present invention.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like, may be described in terms of one or more bending dynamics, and the one or more bending dynamics may be used to design one or more of the one or more structures to be presented and claimed in the present invention, Can be taken into account.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like can be achieved by selecting one or more of at least one of the structures or layers (e.g., a vacuum layer, an air layer, a selected layer) that is deformed for any small radius of curvature r .

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like, is described as the distance (d) from which the deformation has occurred from the geometric plane on which one or more of at least one arbitrary small radius of curvature (r) is located, and one or more Piezo , One or more bending deformation, and / or position shifting of one or more graphynes provided on top of one or more of magnetic particles, charged particles, or charged particles, Graphyne, which has been selected to be selected from one or more of the following: Schottky Barrier, Fermi level, , One or more of the at least one arbitrary small radius of curvature r from one or more of the geometric faces located at one or more of the Schottky Barrier, The Fermi level, and the height of the selected one or more. In one embodiment of the present invention, the distance d described above may be designed as a composite beam (or beam or plate) having an effective stretch stiffness.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, (At least one bending energy, at least one of the bending energy, the axial force F selected) of the at least one bending moment &quot; M &quot; Plane displacement < u >. In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like, the strain energy that is affected by at least one surface displacement u is obtained in terms of <u>. In addition, the displacement < u > extends to the Fourier series with the coefficients to be determined by minimizing the total energy. In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Wherein at least one bending moment < M > in each layer is obtained from one or more curvatures and is solved as a second order derivative of one or more < u >.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, and position shifting can be selected from at least one of regular, irregular, uniform, nonuniform, and porous structural shapes capable of achieving mechanical deformation, one or more one- Dimensional, or three-dimensional, one or more of which may be selected.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like may mean at least one layer having at least one or more spatially non-uniform characteristics, as compared with before operation.

In one embodiment of the invention, the manufacturing method with the fixation and support fixtures of the present invention generates an anchor for facilitating high accuracy lift-off arrangement, thereby producing an anchor from the support substrate to the polymer material And removing the fixed array.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, or the like, satisfies a finite element model of one or more buckling sheets in performing finite element simulation, and in one embodiment of the present invention, the finite element model Is described as follows. Elements having one or more 8-node, 4-node elements selected have a similar buckling deformation pattern and have a finite element model that is sufficiently spaced apart to act in a mechanically independent manner.

In one embodiment of the present invention, a method of making at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, and at least one graphyne May include one or more specific planar process steps, a circuit lift off strategy, a compressible interconnector layout, applying tension, a fixture, a spatially controlled semiconductor process to be performed in a separate manufacturing step from the manufacturing step A manufacturing method selected from one or more of the manufacturing methods proposed in the present invention.

In one embodiment of the present invention, the manufacturing method to be used may include a process of diffusing the carrier medium by separating the hydrophobic region and the hydrophilic region.

In one embodiment of the present invention, the top of the Graphyne may take the form of one or more liquid polymers or elastomers that are not cured without a curing agent on the one or more upper surfaces.

In one embodiment of the present invention, a method of making at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, and at least one graphine, May be provided with one or more alignment holding elements that mechanically couple to a matrix substrate, such as a semiconductor wafer. In one embodiment of the present invention, the one or more alignment holding elements may also be formed of a selected pattern of semiconductor elements during a process step comprising one or more of at least one of transfer, assembly, integration, Lt; RTI ID = 0.0 &gt; and / or &lt; / RTI &gt;

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

Using the curvature properties of Graphyne, one or more of Piezo, Magnetic, Charged, or Charged particles can be selected at the bottom of Graphyne, Due to the electrostatic level of the intersecting barrier-regulating circuit, one or more Piezo particles, magnetic particles, charged particles, or charged particles may be selected from one or more of Graphyne One or more of the work function (work function) by adjusting one or more of the height of one or more Fermi level (Fermi level) by adjusting one or more work function Transistors; To

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

a. Using the curvature properties of Graphyne, one or more of Piezo, Magnetic, Charged, or Charged particles can be selected at the bottom of Graphyne, Due to the electrostatic level of the intersecting barrier-regulating circuit, one or more Piezo particles, magnetic particles, charged particles, or charged particles may be selected from one or more of Graphyne Bending deformation, and positional movement, one or more work function (work function)

b. One or more of a height of at least one Schottky barrier (at least one Fermi level), at least one height of at least one Fermi level (at a Fermi level), and a work function An anomalous transistor; To

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

Using the curvature characteristics of Graphyne, one or more of at least one of magnetic particles, charged particles, or charged particles may be selected at the lower end of the graphyne to control crossing barriers At least one of magnetic particles, particles having electric charge or particles having electric charge is selected because of the electrostatic level of the circuit, and at least one selected from among at least one graphine, bending deformation, A transistor that adjusts one or more work functions by adjusting one or more of the at least one Fermi level to a height of at least one Fermi level; To

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

a. Using the curvature characteristics of Graphyne, one or more of at least one of magnetic particles, charged particles, or charged particles may be selected at the lower end of the graphyne to control crossing barriers At least one of magnetic particles, particles having electric charge or particles having electric charge is selected because of the electrostatic level of the circuit, and at least one selected from among at least one graphine, bending deformation, One or more work functions may be adjusted,

b. One or more of a height of at least one Schottky barrier (at least one Fermi level), at least one height of at least one Fermi level (at a Fermi level), and a work function An anomalous transistor; To

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

Using the curvature characteristics of Graphyne, one or more magnetic particles may be provided at one or more graphene (s) due to the electrostatic level of the intersecting barrier regulating circuit with one or more magnetic particles at the bottom of the graphyne Graphyne) by one or more bending deformation, position movement, and one or more work function (work function) by adjusting one or more height of at least one Fermi level (Fermi level) One or more transistors; To

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

a. Using the curvature characteristics of Graphyne, one or more magnetic particles may be provided at one or more graphene (s) due to the electrostatic level of the intersecting barrier regulating circuit with one or more magnetic particles at the bottom of the graphyne Graphyne), one or more of bending deformation, position shifting, or one or more of the work function (work function)

b. One or more of a height of at least one Schottky barrier (at least one Fermi level), at least one height of at least one Fermi level (at a Fermi level), and a work function An anomalous transistor; To

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

At least one layer selected from at least one of an adhesive layer, a liquid polymer layer, an elastomer layer, a nonconductor layer, an insulating layer, a vacuum layer, and an air layer (air layer) at the upper end of at least one Graphyne,

At least one bending deformation, at least one bending deformation of at least one graphine, and at least one of the bending deformation, the position movement, and the at least one work function; of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

Wherein at least one graphyne and one or more silicones are configured to select one or more of a height of one or more Schottky Barriers and a height of one or more Fermi levels and one or more Schottky Barrier A transistor for adjusting one or more of at least one selected from the group consisting of at least one of a height of at least one Fermi level and at least one height of at least one Fermi level; To

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

Wherein one or more of at least one graphyne and at least one of silicon and a semiconductor are selected to be selected from one or more of a height of one or more Schottky barriers and a height of one or more Fermi levels A transistor that adjusts one or more of at least one selected from the group consisting of at least one Schottky barrier, at least one Schottky barrier, at least one Fermi level, and at least one Fermi level; To

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the invention, one or more of the one or more of the at least one height adjustment of the Schottky Barrier, the at least one Fermi level height adjustment, Wherein the selected one or more of Graphyne and one or more silicon, semiconductor, or one or more of the heights of one or more Schottky Barriers, one or more Fermi levels, And one or more of the at least one Fermi level (at least one Fermi level) of the at least one Schottky barrier.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

Wherein one or more of at least one graphine and at least one of a semiconductor, a metal, a silicon, a conductor, and a conductive material constitutes a height of one or more Fermi levels and one or more Fermi levels A transistor for adjusting at least one height; To

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, adjusting one or more of the heights of one or more Fermi levels (Fermi level) comprises selecting one or more of Graphyne and one or more semiconductors, metals, silicon, conductors, Characterized in that it comprises a height of one or more Fermi levels (Fermi level), and adjusting one or more heights of one or more Fermi levels (Fermi level).

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

Adjusting one or more heights of one or more Graphyne and one or more Schottky Barriers is described as adjusting one or more heights of one or more Fermi levels; of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

a. At least one of Graphyne and at least one bending deformation,

b. At least one of the at least one bending deformation, the position movement, and the at least one of the bending deformation and the position deformation is selected as one or more than one as a Young's modulus in a state of a layer selected from one layer,

c. At least one bending deformation, at least one bending deformation of at least one graphine, and at least one of the bending deformation, the position movement, and the at least one work function; of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

One or more of Graphyne

A layer selected from the group consisting of a layer having one or more low Young's modulus at the upper end of the at least one graphyne and a layer of a conductive material having a Young's modulus; of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

One or more of Graphyne

At least one of an adhesive layer, an elastomer, a van der Waals force, and a layer having a Young's modulus at the lower end of the at least one graphyne; of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

a. Wherein at least one of the at least one magnetic particle is selected from at least one of Graphyne and at least one bending deformation,

b. The at least one magnetic particle may comprise one or more of at least one selected from at least one of a magnet (magnet), a nano magnet (magnet) particle, a nano magnet (synthetic) material, Respectively,

c. At least one bending deformation, at least one bending deformation of at least one graphine, and at least one of the bending deformation, the position movement, and the at least one work function; of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

a. At least one of Graphyne and at least one bending deformation,

b. Wherein at least one of the at least one contact angle (Contect Angle) is a point contact of at least one regular shape, irregular Select one or more of the following types of point contact, regular line contact, irregular line contact, regular contact, irregular contact, irregular contact, irregular contact Gt;

c. A transistor for adjusting at least one work function; of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

a. At least one of Graphyne and at least one bending deformation,

 b. One or more work function (work function) is provided while having at least one graphyne and a contact angle (Contect Angle)

c. Wherein the at least one contact angle comprises at least one contact point, at least one point contact, a round contact, a regular contact, an irregular contact, Select one or more of the following types of point contact, regular line contact, irregular line contact, regular contact, irregular contact, irregular contact, irregular contact One or more of which is selected from at least one of bending, locating, bending or deforming one or more graphynes; of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

a. At least one of Graphyne and at least one bending deformation,

b. Wherein at least one of the at least one contact angle (Contect Angle) is a point contact of at least one regular shape, irregular Select one or more of the following types of point contact, regular line contact, irregular line contact, regular contact, irregular contact, irregular contact, irregular contact , Which is described in terms of continuum mechanics,

c. A transistor that adjusts one or more work functions by adjusting one or more of the heights of one or more of at least one Schottky barrier, a Fermi level; of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

One or more bending deformation and / or positional movement due to the electrostatic level of the crossover circuit for adjusting the barrier passing over one or more graphynes at the top, (Graphyne) is one or more of the following: one or more of the at least one Schottky barrier, the at least one Fermi level, or at least one of the at least two Fermi levels. A transistor for adjusting at least one work function; To

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

The bending deformation may be a state of a layer selected from one layer, a multilayer state,

a. Bending deformation of beam

b. Bending deformation of plate

c. Bending deformation of one or more layers

d. QuasisTaTic bending of beams (QuasisTaTic (semi-static) bending)

e. QuasisTaTic bending of plaTes (Quasistatic bending)

f. Kirchhoff-Love theory of plates

g. Mindlin-Reissner Theory of plaTes (Mindlin-Reissner theory)

h. Dynamic bending of plaTes

i. Dynamics of Thin Kirchhoff plaTes (Dynamics of thin Kirchhoff plates)

j. curvature

At least one selected from the group consisting of a to j consisting of: of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

a. In solving the stand-by power problem, one or more of the at least one Fermi level (Fermi level) height may be selected from one or more of bending deformation, position shifting, and the like of Graphyne to select a work function In adjusting and resolving,

b. At least one bending deformation, position shift, or the like of Graphine is selected; To

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

a. In solving the standby power problem, one or more of the height of one or more Schottky barriers (Schottky Barrier), the height of the Fermi level (Fermi level), or one or more of bending deformation, Or more and adjusting one or more work functions (work functions)

b. At least one bending deformation, position shift, or the like of Graphine is selected; To

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the invention, adjusting one or more of the heights of the Fermi level

a. parameter

Figure pat00001
Lt; RTI ID =

b. If you supply a state (shape or shape) and electrons at a higher level than the Fermi level, the Fermi level goes up,

c. Providing a state (shape or shape) and electrons at a higher level than the Fermi level,

d. Graphyne is distorted spatially but provides electrons at the same time,

e. At least one selected from the above a to e constituted by spatially distorting Graphyne and simultaneously providing a state (shape or a shape) and an electron; of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

At least one of Graphyne and at least one bending deformation,

a. At least one of which is provided with at least one graphine (first electrode), a conductive material (second electrode) and at least one Fermi level (Fermi level)

b. At least one graphyne (first electrode), a conductive material (second electrode), and at least one height adjustment of at least one Fermi level (Fermi level)

c. A configuration in which at least one graphyne (first electrode) is spaced apart from the conductive material (second electrode) by at least one interval, and one or more fermi levels (height adjustment of the Fermi level)

d. One or more of which is selected at least one of proximity, near enough to place Graphine (the first electrode) adjacent to the conductive material (second electrode) in close proximity to one or more of the conductive material (second electrode) Fermi level), the height of which is at least one,

e. Graphyne has at least one surface roughness, at least one of which is provided with at least one Fermi level height adjustment,

f. Graphyne has one or more surface textures, one or more of which are provided with at least one Fermi level height adjustment,

g. Graphyne has one or more deviations from the average surface position, but one or more configurations with at least one Fermi level height adjustment,

, And at least one selected from the above a to g consisting of: of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

At least one of Graphyne and at least one bending deformation,

a. At least one of which is provided with at least one graphine (first electrode), a conductive material (second electrode) and at least one Fermi level (Fermi level)

b. At least one physical contact, at least one of which is provided with at least one graphyne (first electrode), a conductive material (second electrode) and at least one Fermi level height adjustment,

c. At least one graphyne (first electrode), a conductive material (second electrode), and at least one height adjustment of at least one Fermi level (Fermi level)

d. A configuration in which at least one graphyne (first electrode) is spaced apart from the conductive material (second electrode) by at least one interval, and one or more fermi levels (height adjustment of the Fermi level)

e. One or more of the following may be selected: one or more of Graphyne (the first electrode) is attached to one or more of the conductive material (second electrode), adjacent to it, closely adjacent, close enough, One or more configurations with one or more Fermi level height adjustments,

f. Graphyne has at least one surface roughness, at least one of which is provided with at least one Fermi level height adjustment,

g. Graphyne has one or more surface textures, one or more of which are provided with at least one Fermi level height adjustment,

h. Graphyne has one or more deviations from the average surface position, but one or more configurations with at least one Fermi level height adjustment,

, At least one selected from among a to h above constituted by; of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

At least one of Graphyne and at least one bending deformation,

a. At least one of which is provided with at least one graphine (first electrode), a conductive material (second electrode) and at least one Fermi level (Fermi level)

b. At least one physical contact, at least one of which is provided with at least one graphyne (first electrode), a conductive material (second electrode) and at least one Fermi level height adjustment,

c. At least one graphyne (first electrode), a conductive material (second electrode), and at least one height adjustment of at least one Fermi level (Fermi level)

d. A configuration in which at least one graphyne (first electrode) is spaced apart from the conductive material (second electrode) by at least one interval, and one or more fermi levels (height adjustment of the Fermi level)

e. One or more of the following may be selected: one or more of Graphyne (the first electrode) is attached to one or more of the conductive material (second electrode), adjacent to it, closely adjacent, close enough, One or more configurations with one or more Fermi level height adjustments,

f. Graphyne has one or more surface textures, one or more of which are provided with at least one Fermi level height adjustment,

g. Graphyne has one or more deviations from the average surface position, but one or more configurations with at least one Fermi level height adjustment,

, And at least one selected from the above a to g consisting of: of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

Wherein at least one of at least one graphine and at least one bending deformation and position movement is selected, wherein adjusting at least one height of the at least one Fermi level comprises:

a. In adjusting one or more of the height of one or more Fermi level (Fermi level) with the conductive material (second electrode) of Graphyne (first electrode), DiscreTe charging effecTs in small sysTems ) Having one or more configurations for adjusting one or more heights of one or more Fermi levels (Fermi level); of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

Wherein at least one of at least one graphine and at least one bending deformation and position movement is selected, wherein adjusting at least one height of the at least one Fermi level comprises:

a. Graphyne (first electrode) is described as a conductive material (second electrode) and in the form of one or more coulomb blockades, and having one or more electrically connected structures; of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

Wherein at least one of at least one graphine and at least one bending deformation and position movement is selected, wherein adjusting at least one height of the at least one Fermi level comprises:

a. Graphyne (first electrode) is described as a conductive material (second electrode) and in the form of one or more single electron transistors (single electron transistor), and having one or more electrically connected structures; of

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

In one embodiment of the present invention, in a transistor having at least one of bending deformation, position shifting, or the like of Graphyne selected and having at least one function of adjusting a work function,

A transistor having at least one of bending deformation, position shifting, etc. of the graphyne selected and having at least one function for adjusting a work function

One or more one-dimensional, two-dimensional, three-dimensional, or one-to-one correspondence with one or more selected from the group consisting of a CPU, a memory, a semiconductor integrated circuit, a microprocessor, One or more selected from the above; To

And at least one bending deformation and / or positional movement of the graphyne, wherein the at least one bending deformation and the at least one bending deformation are selected.

In one embodiment of the present invention, the Fermi level described in this task is (a). (B) the energy level at which the probability of electrons being picked up is 1/2; The energy height of the outermost electron at the absolute temperature of 0 degree, (c). Is understood to mean that at least one of (a) to (c) consisting of the weakly bound energy level in Graphyne is selected.

In one embodiment of the present invention, Schottky Barrier refers to the barrier to electrons formed in the potential energy due to metal-semiconductor junctions.

In one embodiment of the present invention, particles having charge or charged particles may mean that at least one of endohedral fullerene, positive charge particles, negative charge particles, positive and negative charge particles are selected.

In one embodiment of the present invention, Piezo refers to the converse piezoelectric effect. That is, mechanical deformation occurs when an electric field is applied.

In one embodiment of the present invention, due to the electrostatic level of the crossover circuit, which is for crossing over one or more graphynes, the one or more magnetic grains deform one or more bends, (Graphyne) applied to be selected from one or more of bending deformation, position shifting, causing one or more of the bending deformation and the movement to be selected, is selected from one or more of Schottky Barrier, Fermi level One or more motions of one or more magnetic particles included in adjusting one or more of the Work function by adjusting one or more heights may be described by the Ampere's circuital law or the Amper-Maxwell equation .

In one embodiment of the invention, the electrostatic level can refer to an electrostatic level derived from Hertz.

In one embodiment of the invention, the electrostatic level is selected from one or more of Piezo, Magnetic, Charged, or Charged particles, wherein one or more of the graphicles is at least one Bending deformation, and positional shifting in order to adjust the height of one or more Fermi levels, it has been described in the present invention to have an electrostatic level that is useful for describing the Fermi level.

In one embodiment of the invention, the electrostatic level is selected from the group consisting of one or more Piezo material, magnetic particles, charged particles, or charged particles of the present invention selected from one or more of Graphyne, One or more of bending deformation, positional movement, or any other action capable of generating an electric field, any action capable of generating a magnetic field, any electrostatic action, It means integrally.

In one embodiment of the present invention, the electrostatic level is selected from the group consisting of an electrical force required to have at least one graphyne selected from one or more of bending deformation, positional movement, any action capable of generating an electric field, Which means that one or more of the following actions is selected.

In one embodiment of the present invention, it can be explained by a bending deformation that at least one of Graphyne is selected from at least one bending deformation and at least one position deformation, but the bending deformation end of Graphyne And it is explained that at least one of bending deformation and position movement is selected in order to supplement the detailed description.

In one embodiment of the invention, adjusting one or more of the Fermi level heights is useful to account for adjusting one or more of the height of the Schottky barrier.

In one embodiment of the invention, the Fermi level can be measured simply by a voltmeter (the circuit arrangement of the present invention can be provided to be measurable by a voltmeter), and also in one embodiment of the invention, (Quasi Fermi level) due to temperature, it is described in detail in the specification of the present invention.

In one embodiment of the present invention, the material provided at the bottom of Graphyne may be provided with charged particles or only charged particles.

In one embodiment of the present invention, an elastomeric or insulating layer is also provided on the bottom of the Graphyne to provide one or more Piezo (piezoe) materials, magnetic particles, charge in a multilayered state , One or more of bending deformation, position shifting, and the like, wherein at least one of the particles having a particle size distribution and the particles having an electric charge selected therefrom is selected.

In one embodiment of the present invention, the magnetic particles may mean that at least one of an organic radical, a magnetic metal complex, and a single molecular magnet is selected as an organic molecule exhibiting magnetism.

In one embodiment of the invention, the work function means the energy required to pull one electron out of the solid at the surface of a solid.

In one embodiment of the invention, one or more of the graphynes are selected at least one of bending deformation, position shifting, in a low temperature state, the one or more conductive materials are doped with one or more Schottky Barrier (At least one Fermi level), and at least one Fermi level (at least one Fermi level) at least one of which is selected to control one or more work functions.

In one embodiment of the invention, Graphyne is selected from one or more Piezo material, magnetic particles, charged particles, or charged particles in a low temperature state, Graphyne is one or more selected from at least one of bending deformation and positional shifting. In one or more conductive materials, one or more height of one or more Schottky Barriers, at least one Fermi level (height of Fermi level) And a control function to select one or more of the work function (work function).

In one embodiment of the invention, at least one layer selected from at least one of an adhesive layer, a liquid polymeric layer, an elastomeric layer, a nonconductive layer, an insulating layer, a vacuum layer, an air layer (air layer) And at least one of at least one bending deformation, position movement, or the like of at least one graphine is selected to adjust at least one work function. For example, the above description means that the vacuum layer and the insulating layer can be provided at the upper end of Graphyne at the same time.

In one embodiment of the present invention, the Graphyne of the present invention can mean multi-layer Graphyne (multi-layer Graphyne).

In one embodiment of the present invention, the Graphyne of the present invention may mean Graphdiyne.

In one embodiment of the present invention, the transistor of the present invention may comprise an epitaxial growth and doping process.

In one embodiment of the present invention, each time one or more of the Piezo (piezoe) material, the magnetic particle, the charged particle or the charged particle presented in the present invention is selected, It can be interpreted that it means a state in which an ultra thin film or a vapor deposition film is provided on the upper part (in the manufacturing method presented in the present invention).

In one embodiment of the present invention, the ultra thin film or vapor deposition film has a thickness selected from 10 micrometers or less, 1 micrometer or less, 100 nanometers or less, 10 nanometers or less.

In one embodiment of the present invention, the manufacturing method of the present invention can be considered to include manufacturing methods of various modifications. For example, the deposition may be performed using thermal atomic layer deposition (ALD), thermal chemical vapor deposition, evaporation, chemical vapor deposition (CVD), initiated chemical vapor deposition , iCVD), Atomic layer deposition (atomic layer deposition), or catalytic chemical vapor deposition (CCVD). An important point is that the present invention solves the problem of standby power of Graphyne by selecting at least one of bending deformation and position movement of Graphyne. In this sense, various methods can be used for the manufacturing method and the manufacturing order.

In one embodiment of the present invention, in providing an insulating layer on top of one or more Graphyne or an ultra-thin film on top of Graphyne (e.g., in fabricating a single electron transistor), thermal ALD atomic layer deposition, thermal chemical vapor deposition, evaporation, chemical vapor deposition (CVD), initiated chemical vapor deposition (iCVD), atomic layer deposition Deposition) can be used. In one embodiment of the present invention, the formation temperature of the ultra thin film on the insulating layer or Graphyne may be, for example, about 100 to 400 캜.

In one embodiment of the present invention, Initiated Chemical Vapor Deposition (iCVD) is a solvent-free process that can significantly improve the purity of the polymer thin film.

In one embodiment of the present invention, the patterning process for forming a gate electrode (crossed circuit) and a source electrode (to which Graphyne is connected) and a drain electrode (conductive material) may include wet etch or lift A lift-off process, or the like can be used.

In one embodiment of the present invention, a gate electrode (crossed circuit) may be formed on top of one or more of the layers (vacuum layer, air layer, insulating layer, etc.) provided on top of Graphyne. Or a drain electrode (conductive material) on the side of a source electrode (Graphyne) and a source electrode and a vacuum layer, an air layer, an insulating layer, and a drain electrode Lt; / RTI &gt; The gate electrode (crossing circuit) and the drain electrode (conductive material) may be formed of a metal or a metal compound. The metal may include at least one selected from the group consisting of Au, Cu, Ni, Ti, Pt, Ru, Pd and the like, and may be formed as a single layer or a multilayer structure. The metal compound may be, for example, a conductive metal oxide or a metal alloy. The gate electrode (crossing circuit) may include Graphyne. The drain electrode (conductive material) may also include at least one graphine. The drain electrode (conductive material) may be formed of the same material as the gate electrode (crossing circuit), or may be formed of another material.

In one embodiment of the invention, one or more of Piezo (piezoe) material, magnetic particle, charged particle, or charged particle, and at least one graphyne at the top The following manufacturing method may be provided. (One). Substrate cleaning, (2). Metal deposition, resistor application, (3). Exposure, (4). Phenomenon, (5). Etching (isotropic or anisotropic etching, or wet etching), (6). One or more Piezo material, magnetic particles, charged particles, or charged particles. Resistors, metal removal, (8). Patterning after (or printing) Graphyne coated with polymethylmethacrylate (PMMA), (9). Polymethyl methacrylate (PMMA) or the like is coated on Graphyne (or the insulating layer is deposited instead of PMMA in the 9th step) (10). And a barrier regulating circuit crossing the upper portion. (11). The polymethylmethacrylate (PMMA) layer is completely dissolved with a solvent (for example, acetone). (1) to (9), and the production process leading to (1) to (11).

In one embodiment of the invention, one or more of Piezo (piezoe) material, magnetic particle, charged particle, or charged particle, and at least one graphyne at the top The following manufacturing method may be provided. (One). Substrate cleaning, (2). Metal deposition, resistor application, (3). Exposure, (4). Phenomenon, (5). Etching (isotropic or anisotropic etching, or wet etching), (6). One or more Piezo material, magnetic particles, charged particles, or charged particles. Resistors, metal removal, (8). Dispersing Graphyne in a solvent to prepare a dispersion; Evaporating the dispersion to heat (or at room temperature) after coating, and thereafter, a patterning process. Polymethyl methacrylate (PMMA) or the like is coated on Graphyne (or an insulating layer is deposited instead of PMMA in the step 9). (10). And a barrier regulating circuit crossing the upper portion. (11). The polymethylmethacrylate (PMMA) layer is dissolved with a solvent (in this case, acetone). (1) to (9), and the production process leading to (1) to (11).

In one embodiment of the invention, one or more of Piezo (piezoe) material, magnetic particle, charged particle, or charged particle, and at least one graphyne at the top The following manufacturing method may be provided. (One). Substrate cleaning, (2). Metal deposition, resistor application, (3). Exposure, (4). Phenomenon, (5). Etching (isotropic or anisotropic etching, or wet etching), (6). One or more Piezo material, magnetic particles, charged particles, or charged particles. Resistors, metal removal, (8). Patterning after (or printing) Graphyne coated with polymethylmethacrylate (PMMA), (9). An insulating layer is provided over the Graphyne (e. G., Deposition). (10). And a barrier regulating circuit crossing the upper portion. (11). The polymethylmethacrylate (PMMA) layer is completely dissolved with a solvent (for example, acetone). (1) to (9), and the production process leading to (1) to (11).

In one embodiment of the present invention, one or more of at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, and at least one of Graphyne, May be provided with a nanoimprint lithography process.

In one embodiment of the present invention, the insulating layer, the PMMA layer, and the resist layer may be formed using a spin coating method.

In one embodiment of the present invention, (a) underneath the crossover circuit is basically provided whenever it is given that the crossover circuit presented in the present invention is provided. An insulating layer, or (b). (A) to (b) consisting of a vacuum layer, an air layer, and an insulating layer. In addition, a CMOS process may be selectively used , The description of the invention has not been described with concern that it becomes too complicated and blurry.

In one embodiment of the present invention, the sacrificial layer for forming a vacuum layer on the top or bottom of Graphyne may be made of a material dissolved in an organic solvent such as acetone, benzene or chloroform. Therefore, when an organic solvent is used, the sacrificial layer can be removed. For example, the sacrificial layer may be a poly-methylmethacrylate (PMMA) layer. However, the present invention is not limited thereto, and any substance may be used as long as it is soluble in an organic solvent

In one embodiment of the present invention, the drain electrode (conductive material), the gate electrode (intersecting barrier regulating circuit) and the source electrode (connected to Graphyne) are each independently Au, Al, Ag, And is composed of Co, Cu, Cr, Hf, In, Mn, Mo, Mg, Ni, Nb, Pb, Pd, Pt, Rh, Re, Ru, Sb, Ta, Te, Ti, V, W, Zr, And the like. At this time, when the electrode is formed of mixed metal, it may be an alloy, or in some cases, a bonded form. In one embodiment of the present invention, the source and drain electrodes connected to Graphyne, which have at least one of more than one bending deformation, position shifting, are also selected from graphene Graphyne), but is not limited thereto.

In one embodiment of the present invention, the transistors of the present invention are selectively provided in an inclusion group in the manufacturing method of the present invention, in a step of providing an insulating layer at the upper or lower position of Graphyne, The use of chemical mechanical polishing (CMP) to polish the insulating layer to reduce (or flatten) the thickness of the insulating layer to a desired level, for example, from about 5 nanometers to about 100 nanometers Method can be additionally provided.

In one embodiment of the present invention, when a manufacturing process for dissolving a PMMA layer in the present invention is presented, for example, (1). Securing a passage through which acetone can flow into the PMMA layer (for example, etching, ion beam, etc.), and (2). After dissolving the PMMA layer (3). It is understood that the manufacturing process may be partially described (for example, vapor deposition), but it is not described in detail in the description of the manufacturing process of the present invention, but it can be understood that it is described (in order to prevent the specification from becoming too complicated ).

In one embodiment of the present invention, the manufacturing process for fabricating the structure of the transistor of the present invention is characterized in that after the step comprising at least one selected from the group consisting of magnetic particles, particles having electric charge or particles having electric charge, (Or deposition) process is optionally added. However, it is understood that the process is not described in detail in the description of the manufacturing process of the present invention, but is understood to be described (in order to prevent the specification from becoming too complicated).

In one embodiment of the present invention, the transistor of the present invention is fabricated by separately fabricating the barrier regulating circuitry of the upper layers of Graphyne and Graphyne, followed by a face-to-face (wafer bonding process) Integration of graphyne circuitry and barrier adjustment circuitry in one or more selected of height adjustment of one or more Fermi Levels, height adjustment of Schottky Barriers through bending of Graphyne A 3D integration method is used. The 3D integration method refers to a process of separating the barrier regulating circuits of the upper layers of Graphyne and Graphyne and then integrating the two in a face-to-face (wafer bonding process).

In one embodiment of the invention, the source layer (left side-source connected to Graphyne) is composed of metal, (A). The drain layer (the right side drain with a physical gap (which here is referred to as the height adjustment of the elevation-Fermi level) with the Graphyne) is made of copper (Cu) (Of course, Graphyne or other metal is provided, and only barrier contact circuit wafer and contact part are possible with Cu), (B). Drain layer (the right side for constituting the Graphyne and the Schottky barrier constitutes the Graphyne and the Schottky barrier by means of semiconductors or semiconductors) and the height of the Fermi level (Cu) is then provided to the silicon or semiconductor (which may later be adhered in the wafer bonding step), (C). The right side-drain for constituting the drain layer (Graphyne and Schottky barrier) has a physical gap with silicon or semiconductor with Graphyne (here, the height of the height-Fermi level (A) to (A), which consist of a Schottky barrier (which constitutes a Schottky barrier) and then silicon or semiconductor is provided with copper (which can be subsequently adhered in the wafer bonding step) C).

Thus, the metal contacts at a selected location of at least one of the exposed portions of the Graphyne layer (s) and the left side-source, drain, which is connected to Graphyne. The source layer is deposited to a thickness of about 1 nanometer to about 100 nanometers using e-beam evaporation and sputtering, and the drain layer (Cu) is deposited using electrochemical deposition to a thickness of about 1 nanometer And can be deposited to be about 5 to 800 micrometers (μm). After this (a). An evaporation method, a thermal atomic layer deposition (ALD), a thermal chemical vapor deposition (CVD), a chemical vapor deposition (CVD), an Initiated Chemical Vapor Deposition (iCVD) The Graphyne (or Graphyne) patterning may be added using the method of choice (of course, selected from the group consisting of atomic layer deposition, atomic layer deposition) (Graphyne) / deposited on a substrate), (b). The excess metal is removed using chemical mechanical polishing (CMP) and polished to reduce the thickness of the insulating layer to a desired level, for example, from about 5 nanometers to about 100 nanometers, or (a). PMMA drop-coating (or spin-coating) (b). An evaporation method, a thermal atomic layer deposition (ALD), a thermal chemical vapor deposition (CVD), a chemical vapor deposition (CVD), an Initiated Chemical Vapor Deposition (iCVD) ), Atomic layer deposition (atomic layer deposition), (c). The excess metal is polished using chemical mechanical polishing (CMP) and polished to reduce the thickness of the insulating layer to a desired level, for example, from about 5 nanometers to about 100 nanometers d). And the PMMA layer is melted to form a vacuum layer (the method is described in one aspect). The above-described method is referred to as a "Graphyne wafer". This is followed by a face-to-face coupling that is used to integrate the Graphyne wafer and the barrier alignment circuit wafer. The barrier alignment circuit wafer is turned over to face-to-face with the Graphyne wafer. Alternatively, a Graphyne wafer may be turned over to face-to-face engagement with the barrier-regulating circuit wafer

And is coupled in a copper to copper bond between the corresponding source and drain metal contacts of the two wafers. Typical bonding temperatures are below 400 ° C. Therefore, the devices are not destroyed during the process. In one embodiment of the invention, a conductive material that is bonded at about 400 [deg.] C instead of a copper to copper bond may be used.

3D integration is a very promising technology for meeting the gap in packaging and integrated circuit technology for the Graphyne bend circuit presented in the present invention. Techniques for stacking CMOS device layers are known. 3D integration technology can be a new way to improve system performance without scaling. In addition, with carriers that are highly mobile in Graphyne, the parasitic resistance and parasitic capacitance of the interconnects will become more important in determining the performance of the overall circuit. In this regard, 3D integration provides a great advantage to the graphyne bending circuits presented in the present invention. Such advantages include (a) a reduction in overall interconnect length and hence a reduction in interconnect delay time, (b) a significant increase in interconnects between chips, and (c) the ability to integrate dissimilar materials, process technologies and functions .

Thus, the advantages of the present technology for producing graphyne bending circuits are as follows: 1) Graphyne can be provided by a wide variety of methods, including the methods described above . 2) A composite circuit (eg, a barrier regulating circuit (CMOS circuit)) with a barrier regulating circuit in a standard clean-room facility can be pre-fabricated without potential contamination from carbon materials. 3) Alignment in the face-to-face (wafer bonding process) can reduce the graphyne and standby power problems by adjusting the height of one or more Fermi Levels, adjusting the height of Schottky Barriers, In a Graphyne bending circuit that has more than one selected, it is always coupled to the desired position of the circuit. 4) The requirements of conventional CMOS devices (eg barrier control circuit wafers), such as temperature, wet etch, and gas ambient in the process, can still be maintained because the graphyne and standby power The problem is that the Graphyne bending circuit, which is provided with at least one of more than one of the height adjustment of one or more Fermi Levels, the height adjustment of Schottky Barriers, is manufactured separately on another substrate . 5) In the case of Graphyne bend circuits, the circuit latency, which is dominated by interconnects, is significantly reduced.

In addition, after removing more than a certain amount of the barrier-coordination circuit wafer from the Graphyne wafer and (copper-to-copper) bonding, one or more of the additional devices, metal layers, have. Or one or more of additional devices, a metal layer, may also be fabricated in a barrier regulating circuit wafer and a copper-to-copper bonded Graphyne wafer.

In one embodiment of the present invention, in a face to face bonding scheme as presented in one aspect, the remaining portions of the two wafers, except between the corresponding source and drain metal contacts (e.g., via a CMP process Insulating layer) may be selected from an adhesive layer, an adhesive, an adhesion precursor, a van der Waals force, or the like. In one embodiment of the invention, surface tension, interfacial tension, instead of Van der Waals force, may be substituted for selected forces. In one embodiment of the invention, the adhesive layer is selected from adhesives, vibrational adhesives, thermal adhesives, adhesives presented in a series of processes capable of bonding in an atmosphere of a semiconductor process.

In one embodiment of the present invention, the source and drain metal contacts may have a structure in which copper is provided on one of the wafers or on both wafers.

In one embodiment of the present invention, there is provided a method of providing Graphyne as provided in the present invention, comprising the steps of: (a) forming a self-assembled monolayer (SAM) on a monolayer Graphyne or multilayer Graphyne layer, ); (b) etching the single-layer Graphyne or multi-layer Graphyne layer using the self-assembled monolayer SAM as a mask; (d). (A) to (d), which consists of removing the self-assembled monolayer (SAM) (for example, washing with a solvent), may partially include the method of the present invention.

In one embodiment of the present invention, for a transistor having at least one of bending deformation, position shifting of Graphyne selected and at least one selected to control at least one work function, Using at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle using at least one of a Piezo material, a Curie point, At least one of Piezo, Magnetic, Charged, or Charged particles is selected due to the electrostatic level of the tuning circuit, and one or more of the graphynes are bent or deformed at one or more positions (The shape at the highest position to be deformed, for example the shape of the hill, which is a variant of Graphyne) Point) it can be utilized is understood as quantum dots (Quantum dot). In one embodiment of the present invention, Graphyne is used as the end point of at least one of more than one bending deformation, position shifting (in the form of the highest position to be deformed, for example a variant of Graphyne (The highest point of the hill) is at the top of Graphyne (1). Ultra thin, (2). Vapor deposition, (3). Quantum dots of ultra thin film or deposited film after ultra thin film or vapor deposition, (4). A quantum dot of an ultra thin film or an ultra thin film or a deposited film after an ultra thin film or a vapor deposition film is provided, and a patterned quantum dot of a patterned quantum dot (e.g., The quantum dot of Graphine may be understood and utilized as a quantum dot which is the highest vertex provided in a state of being provided in the upper part of Graphyne. In one embodiment of the present invention, the end portion of the uppermost portion of the strain of at least one of the bending deformation, position shifting, and the like of the graphyne is understood as a quantum dot is a patterned graphene (Quantum dot), which is the highest vertex of a selected one of the quantum dots of the patterned graphene and the quantum dot of the patterned graphene.

In one embodiment of the present invention, the transistor of the present invention is provided with a quantum dot of Graphyne on the Graphyne. A pattern is formed by transferring Graphyne to the top of Graphyne and then transferred to patterned Graphyne to obtain a Graphyne quantum dot. (One). Equipped with Graphyne, (2). Patterning, (4). A quantum dot of Graphyne may be provided with the method of <1> to <2>, which includes a quantum dot of Graphyne. Thereafter, in one embodiment of the invention, using at least one of face-to-face bonding schemes (other types of fabrication methods can be used), bending deformation of Graphyne, And a transistor in which the end portion of the uppermost part of the deformation is provided as a quantum dot.

In one embodiment of the present invention, having one selected from the group consisting of Graphyne patterned on the top of Graphyne, and Graphyne patterned on the top of the Graphyne, (Graphyne) in that it has at least one of bending deformation, position shifting of bending moment, bending deformation of bending moment, bending deformation of bending moment, bending deformation of bending moment,

In one embodiment of the present invention, the single electron transistor can significantly reduce power consumption, so that the use time of the battery can be significantly increased, and the size of the battery can be significantly reduced.

In one embodiment of the present invention, the graphyne circuit configuration of the present invention may also be referred to as a two-dimensional circuit in which the three-dimensional circuit configuration takes place in a plane (for example, a three- A two-dimensional layer structure - it is easy to understand if you think you are lying down)

In one embodiment of the present invention, the insulating layer described in one aspect is meant to include at least one selected from the group consisting of an AIR gap, a vacuum gap, and an adhesive layer on top of Graphyne.

In one embodiment of the present invention, the insulating layer described in one aspect includes one or more of a height adjustment of the Fermi Level to solve the graphical standby power problem, a height adjustment of the Schottky barrier, Quot; a &quot;, &quot; a &quot;, and &quot; a &quot;

In one embodiment of the present invention, the insulating layer described in one aspect may integrally mean a layer capable of controlling as Young's modulus that at least one of bending and locating of Graphyne is selected.

In one embodiment of the present invention, the insulating layer described in one aspect may mean that the insulating layer is selected from an adhesive layer, an elastomer layer, an insulating layer, and an insulating layer.

In one embodiment of the present invention, the insulating layer described in one aspect may be selected from among an adhesive layer, an elastomer layer, a nonconductor layer, and an insulating layer, wherein at least one of bending and locating of Graphyne It is possible to integrally mean a layer capable of controlling the selection as Young's modulus.

In one embodiment of the present invention, the insulating layer described in one aspect

a. An adhesive layer, an elastomer layer, an insulating layer, and an insulating layer

b. One or more bending deformations of graphine, locational movement, or the like, which can be controlled by Young's modulus,

c. An insulating layer including a material selected from an air layer, a vacuum layer, an adhesive layer, and an insulating layer

d. An insulating layer comprising a thin film layer and further comprising an upper layer selected from an air layer, a vacuum layer,

, &Lt; / RTI &gt; and &lt; RTI ID = 0.0 &gt; a &lt; / RTI &gt; To .

In one embodiment of the present invention, a method comprising one or more of Piezo (piezoe) material, magnetic particle, charged particle, or charged particle, (For example, printing and floating) can be provided.

In one embodiment of the present invention, the position of the barrier regulating circuit is in principle shown at the top of the Graphyne, but it can also be provided at the bottom of the Graphyne and is located at the bottom of the Graphyne And at least one graphyne having at least one selected from the group consisting of at least one Piezo material, magnetic particles, charged particles, or charged particles is subjected to at least one bending deformation, , &Lt; / RTI &gt;

In one embodiment of the present invention, the position of the barrier regulating circuit may be located at a location selected from the top, bottom or side of the Graphyne, and the angle with the Graphyne bending circuit may be in a horizontal state An angle of 0 to 90 degrees, an angle of inclination in a vertical state, and the like. An important point is that at least one of Piezo, a magnetic particle, a charged particle, or a charged particle selected from one or more of bending strain, Or more.

In one embodiment of the present invention, at least one graphyne having at least one selected from among at least one of a Piezo material, a magnetic particle, a charged particle, or a charged particle, Bending deformation, position shifting, etc. In the embodiment of the present invention, although one or more of the above is selected as the lower portion in the drawing, in one embodiment of the present invention, one or more grains are provided on the top of the graphyne, ) May be one or more selected from at least one of bending deformation, position shifting, and the like. Also, in one embodiment of the present invention, one or more of the at least one side of Graphyne may be provided with at least one of bending deformation, have. Also, in one embodiment of the present invention, at least one of side and bottom of at least one graphyne is provided and at least one of graphyne is selected as side and lower bending deformation, can do. Thus, in one embodiment of the present invention in the present invention, at the bottom (or bottom), one or more of Piezo (piezo) material, magnetic particles, charged particles or charged particles, (1) to express at least one graphyne having at least one selected from at least one of bending deformation, position shifting, and the like. It refers to the position selected from the top, bottom, and side of Graphine, 2). That the barrier regulating circuit is provided at the selected position of the top, bottom or side of the graphyne; The barrier adjustment circuit is a position where the height of the Fermi Lever of Graphyne can be adjusted in the same way. In addition, one or more of Piezo (Piezo) material, magnetic particle, particle with charge or charged particle Which can be selected from one or more of Graphyne bending deformation, position shifting, 4). (One or more of Piezo (piezoe) material, magnetic particles, charged particles, or charged particles) is selected from at least one of Graphine's bending deformation, What you can do, 5). (One or more of Piezo (piezoe) material, magnetic particles, charged particles, or charged particles) is provided at a selected location among the top, bottom, and sides of Graphyne Things, 6). The barrier regulating circuit is selected from the top, bottom, side of Graphyne and one or more of (Piezo) material, magnetic particles, charged particles or charged particles) Provided in the position, 7). Wherein at least one of magnetic particles, particles having electric charge, particles having electric charge, or particles having electric charge is selected is provided with a barrier adjusting circuit at a position capable of having at least one of bending deformation and position shifting selected Things, 8). Wherein one or more of magnetic grains, particles having electric charge, particles having electric charge, or particles having electric charge are selected is selected from at least one of graphyne, bending deformation, and position shifting, wherein bending deformation, Being provided at a position capable of having a reflective bending deformation part or a reflective position shifting part of the outer part 9). Wherein a barrier regulating circuit is provided at a position capable of having at least one selected from among magnetic particles, particles having electric charge, particles having electric charge or particles having electric charge selected from among at least one of graphine, bending deformation, , A bending deformation section of the outer periphery which is bent and deformed, and a reflex position shifting section of the outer periphery. (One or more of Piezo (piezoe) material, magnetic particles, charged particles, or charged particles) is selected from at least one of Graphine's bending deformation, (1) to (10), wherein the bending deformation is provided at a position that can be provided with a bending deformation, a bending deformation of the outer bending deformation portion, or a reflection position shifting portion of the outer portion, May be construed to include the constitutional state of one or more of the above 1) to 10), and the important point is that the graphyne is selected from one or more of bending deformation, Respectively.

In one embodiment of the present invention (at least one Piezo material), at least one or more bending deformation, position shifting, or more than one graphine is selected at the bottom (or bottom) 1). It refers to the position selected from the top, bottom, and side of Graphine, 2). That the barrier regulating circuit is provided at the selected position of the top, bottom or side of the graphyne; (One or more Piezo) materials may have one or more of Graphyne selected for flexural deformation, displacement, and 4). (One or more Piezo material) is provided at a selected location in the top, bottom, side of Graphyne; 5). The barrier regulating circuit being provided at a selected location on the top, bottom or side of Graphyne and (one or more Piezo) materials; (1) to (6), wherein at least one Piezo material is provided with a barrier regulating circuit at a position capable of having at least one of bending deformation, Or one or more of the above items 1) to 6), and the important point is that the graphyne has at least one bending deformation, , &Lt; / RTI &gt;

In one embodiment of the present invention, each time (a) an intersecting circuit (or an intersecting barrier regulating circuit) is provided that is provided in accordance with the present invention, An insulating layer, or (b). (A) to (b) consisting of a vacuum layer, an air layer, and an insulating layer. In addition, the step of providing a CMOS circuit in the cross circuit is optional But it has not been described with concern that the gist of the invention becomes too complicated and blurry. In one embodiment of the present invention, the crossover circuit (or crossed barrier regulating circuit) presented in the present invention may be provided below the Graphyne layer, for example, 1). Insulating layer / Graphyne / magnetic particle / insulating layer (or substrate layer) / barrier regulating circuit, 2). Insulating layer / vacuum layer / graphyne / magnetic particle / insulating layer (or substrate layer) / barrier regulating circuit, 3). Insulating layer / Graphyne / particles with charge / insulating layer (or substrate layer) / barrier regulating circuit, 4). An insulating layer / a vacuum layer / a graphyne / a particle having a charge / an insulating layer (or a substrate layer) / a barrier adjusting circuit.

In one embodiment of the present invention, each of the manufacturing processes proposed in the present invention may be selectively added to the chemical mechanical polishing (CMP) manufacturing process before the start of the process (the thickness and the flatness are preferably set at a desired level To adjust).

In one embodiment of the present invention, the transistor of the present invention is fabricated by separately fabricating the barrier regulating circuitry of the upper layers of Graphyne and Graphyne, followed by a face-to-face (wafer bonding process) A 3D integration method that includes integrating a graphyne bend circuit and a barrier adjustment circuit of one or more of at least one of height adjustment of the Fermi level, height adjustment of the Schottky barrier, use. The 3D integration method is a process of separating the barrier adjustment circuit of the upper layer of Graphyne and Graphyne and then integrating them in a face-to-face (wafer bonding process). In one embodiment of the present invention, (1). (2) a graphyne bending circuit and a barrier adjustment circuit of one or more selected from among one or more of height adjustment of one or more Fermi Levels, height adjustment of Schottky Barriers, and the like. It is of course possible to have a manufacturing method of manufacturing a CMOS wafer by separating it and then integrating the two in a face-to-face (wafer bonding process) of (1) and (2). Alternatively, in an embodiment of the present invention, (1). (2) a graphyne bending circuit of at least one selected from the height adjustment of one or more Fermi Levels, the height adjustment of Schottky Barriers, and the like. After the fabrication method of separating the CMOS wafer and then later integrating the two in (1) and (2) in a face-to-face (wafer bonding process), (3). After the face-to-face coupling is inverted and combined, a barrier adjustment circuit can be formed on the substrate 1 provided with a Graphyne circuit. In one embodiment of the present invention, the face-to-face bonding method may additionally include several steps, but it is possible to use a graphyne bend circuit wafer, which is basically equipped with a Graphyne bend circuit wafer, Face-to-face coupling of the CMOS wafer. In the above step, the barrier regulating circuit is provided in 1) a Graphyne bending circuit wafer, 2) in a CMOS wafer, 3) in a Graphyne bend circuit wafer or CMOS wafer after the face to face bonding, (1) to (3).

In an embodiment of the present invention, the first wafer and the second wafer may comprise a method of performing face-to-face bonding of the first wafer with the second wafer, but side-to-side bonding.

In one embodiment of the present invention, the transistor of the present invention may refer to a semiconductor device having both a Graphyne-based circuit and a barrier adjustment circuit (CMOS circuit).

In one embodiment of the present invention, a transistor that modulates one or more of the Work function with at least one selected from among at least one bending strain, position shift, or the like of Graphyne is referred to as "(Fermi level (Fermi level) ") &quot;. The above (Fermi level at the transistor) is described as follows.

(001-001). Fermi level

(001-001-01). The Fermi level is the total chemical potential of the electron (or the electrochemical potential for electrons), usually expressed as μ or EF.

(001-001-02). The body's Fermi level is a thermodynamic quantity, meaning it does not have to calculate the work required to remove the electrons from where it came from, and it is thermodynamic that needs to add an electron to the body.

(001-001-03). An accurate understanding of the Fermi level method is described as follows: The electronic band structure is voltage related. In addition, the flow of charge, which determines the electronic nature, is essential to the understanding of solid state physics, and the Fermi level in the circuit electronics is such that the thermodynamic equilibrium has a 50% probability that the energy level is occupied at any given time, It can be considered as an energy level.

(001-001-04). The Fermi level does not necessarily correspond to the actual energy level (the Fermi level in the insulator depends on the bandgap) and even requires the presence of a band structure.

(001-001-05). Nonetheless, the Fermi level is accurately defined as the thermodynamic amount, and the difference in Fermi level can be measured simply with a voltmeter.

(001-002). Fermi level and voltage

(001-002-01). An oversimplified explanation of electronic circuits is that current is known to be driven by the difference in electrostatic potential, but the exact explanation is given below.

(001-002-02). Obviously, the electrostatic potential is not the only factor that affects the charge flow in the material. Pauli repulsion and thermal effects also play an important role.

(001-002-03). In fact, the amount of "voltage" measured in an electronic circuit is simply about the chemical potential for electrons (Fermi level).

(001-002-04). If the lead of the voltmeter is connected to two points of the circuit, the displayed voltage is the basis of the total operation that can be obtained per unit cost by allowing a small amount of charge to flow from one point to another.

(001-002-05). A simple wire (forming a short): When connected between two points of different voltage, the current will flow from the positive voltage to the negative voltage to convert the potential to heat.

(001-002-06). The body's Fermi level means the work necessary to add the electrons to it or to remove the electrons.

(001-002-07). Thus, the observed difference is explained by the fact that in a Fermi level-other- (μB-μA) electronic circuit, the voltage (VA-VB) between two points "A" and "B" ,

Figure pat00002

(001-002-08). Where -e is an electronic charge.

(001-002-09). If a simple path is provided, then in the above discussion it can be seen that the electrons will move at a low μ (high voltage) and at a high μ (low voltage) body.

(001-002-10). This flow of electrons can cause a low μ to increase (due to charging or other repulsion effects) and likewise cause a high μ decrease.

(001-002-11). As a result, μ is settled to the same value in both bodies.

(001-002-12). This leads to important facts about the state of the balanced electronic circuit (described below):

(001-002-13). An electronic circuit in thermodynamic equilibrium has a constant Fermi level across its connection.

(001-002-14). This also means that the voltage between any two points (measured by a voltmeter) is zero at equilibrium.

(001-003-01). Fermi level and band structure

(001-003-02). In metal and semi-metal, the Fermi level EF lies in at least one band. Insulators and semiconductors have a Fermi level within the bandgap, but the need to fill the thermal electrons or holes in the semiconductor band is close enough to the Fermi level.

(001-003-03). In the solid band theory, the electrons are considered to be a band occupied by a single particle energy eigenstate, each labeled by ε.

(001-003-04). Although this single particle picture is approximate, it greatly simplifies understanding of electronic behavior and provides correct overall results when applied correctly.

(001-003-05). Fermi-Dirck distribution

Figure pat00003
Gives the probability of occupying the energy state ε of the electron (in thermodynamic equilibrium).

(001-003-06). As an alternative, give the limit imposed by the Pauli exclusion principle and give the average number of electrons to take that state:

Figure pat00004

(001-003-07). Where T is the absolute temperature and K is the Boltzmann constant.

(001-003-08). If the state is at the Fermi level (ε = μ), this state will have a 50% chance of being occupied at any given time.

(001-003-09). The position of μ in the band structure of a material is important in determining the electrical behavior of the material.

(001-003-09-1). In an insulator, μ lies within a large bandgap.

(001-003-09-2). In metal, semi-metal or degenerate semiconductors, μ lies in the delocalized band. Many nearby μs in the state are thermally activated and easily carry the current.

(001-003-09-3). In intrinsic or lightly doped semiconductors, μ is at a dilute number of thermally excited carriers residing near the edge of the band, and thus close to the edge of the band.

(001-003-10). The position of μ in semiconducting and band structures can be controlled to a significant degree by doping or gating, generally in semi-metals (the above theories are useful in constructing conductive material circuits in electrical contact with Graphyne).

(001-003-11). These controls are not fixed by the μ electrodes they will not change, but they cause the entire band structure to move down (sometimes changing the shape of the band structure).

(001-004-01). Local conduction band internal chemical potential, and parameters

Figure pat00005

(001-004-02). In symbol case E, to represent the measured energy level of the energy of the outer band bottom

Figure pat00006
Normally after we have E =
Figure pat00007
It is used to have, especially our parameters defined
Figure pat00008
Refer to the Fermi level at the edge of the band as shown below:

Figure pat00009

(001-004-03). This Fermi-Dirke distribution function is also written as:

Figure pat00010

(001-004-04).

Figure pat00011
Is related to the typical kinetic energy as well as the number of direct active charge carriers, and therefore it is directly involved in determining the local characteristics of the (electrically conductive) material.

(001-004-05). For this reason, when focusing on the properties of electrons in a single homogeneous conductive material

Figure pat00012
This is a common reason to focus on the value of.

(001-004-06). Similar to the energy state of a free electron, there is an E state.

Figure pat00013
Is the potential energy.

(001-004-07). With this in mind,

Figure pat00014
Can also be labeled "Fermi kinetic energy".

(001-004-08). Unlike μ, the parameter

Figure pat00015
The
Figure pat00016
And it is not an equilibrium constant.

(001-004-09).

Figure pat00017
(E.g., one or more bending deformations of the material, e.g., at least one bending deformation of the material, and at least one surface roughness selected from one or more of the following: (location to location) is different.

(001-004-10). Near the surface of Graphyne,

Figure pat00018
Can be controlled by strongly external applied electric field (intersecting barrier control circuit).

(001-004-11).

Figure pat00019
Can take multiple values in one place in a multi-band creative.

(001-005-01). Fermi level and equilibrium temperature

(001-005-02). Semi-Fermi level

(001-005-03). An example of a Fermi level μ and temperature T is a case of sitting on a shelf without doing anything and defining a constant for a solid state device in thermodynamic equilibrium.

(001-005-04). Strictly speaking of Fermi level and temperature is no longer well defined when the device exits from equilibrium and is put into use.

(001-005-05). Fortunately, it is possible to define semi-Fermi levels and quasi-temperatures for specific locations, which accurately account for the state (state) in terms of heat distribution.

(001-005-06). At this time, the device is said to be in 'semi-equilibrium state'.

(001-005-07). A semi-balanced approach can be used to simply construct some non-equilibrium effects, such as electrical conductivity or thermal conductivity of a piece of metal (such as caused by a gradient of μ) (resulting in a gradient in T).

(001-005-08). The quasi-μ and quasi-T are in non-equilibrium states such as change (or none at all). Two examples are shown below.

(001-005-08-1). When the device has been altered but does not have enough time to equip again. (As in piezoelectric or pyroelectric materials).

(001-005-08-2). If the system is exposed to changes in the electromagnetic field (such as capacitors)

(001-006-01). Fermi level - reference zero Fermi level location

(001-006-02). As with the selection of the origin of many coordinate systems, the zero point of the energy can be arbitrarily defined.

(001-006-03). Observable phenomena depend on the difference in energy.

(001-006-04). When comparing different bodies, however, it is important that they all agree on their choice of zero energy position, or otherwise obtain nonsensical results.

(001-006-05). Thus, it may be helpful to explicitly name the common point to ensure that other components agree.

(001-006-06). On the other hand, if the reference point (for example, see "Vacuum" below) is selected ambiguously, it will cause more problems.

(001-006-07). The practical and well-justified choice of a common point is a bulky physical conductor, such as an electrical ground or earth. These conductors can be considered to be in good thermodynamic equilibrium, so its μ is well defined.

(001-006-08). It provides the storage of charge and can be added or removed without generating a large number of charge effects of electrons

(001-006-09). It also has the advantage of being accessed so that the Fermi level of other objects can be easily measured with a voltmeter.

(001-007-01). Two metals (conductive material in electrical contact with Graphyne). However, this method is not recommended unless care is taken to define the exact position of the "vacuum".

(001-007-02). When two metals (a conductive material in electrical contact with Graphyne) are at the same thermodynamic equilibrium (same Fermi level), the vacuum electrostatic potential φ can show a non-flat work function in its difference.

(001-007-03). In principle, you can consider the state of a vacuum stationary electron as a reference point for one energy. However, this method is not recommended unless care is taken to define the exact position of the "vacuum". The problem is that every point in the vacuum is the same.

(001-007-04). Thermodynamic equilibrium, which is a typical thermodynamic equilibrium for a 1 V difference to exist in an electrical potential vacuum (voltaic potential).

(001-007-05). In one embodiment of the invention, the source of this vacuum potential variation may be a change in the work function of another conductive material exposed to vacuum (a conductive material in electrical contact with Graphyne).

(001-007-06). However, external conductors, electrostatic potentials, depend not only on the material, but also on certain surfaces. (Its crystal orientation, and other details)

(001-007-07). Parameters that provide the closest approximation to universality can be referenced to Earth. Fermi level is the above suggestion. This also has the advantage that it can be measured with a voltmeter.

(001-008-01). DiscreTe charging effecTs in small sysTems (individual charging effect on small systems)

(001-008-02). In a small system, the above definition should be clear when doing "non-negligible" to single electrons due to individual charging effects. For example, in the same format as a capacitor, made of two identical parallel plates.

(001-008-03). If the capacitor is not charged, the Fermi level is the same on both sides, so you can think of it as having no energy to move electrons from one plate to the other.

(001-008-04). When the electron is moved, the capacitor is (slightly) charged, so it must go through a small amount of energy.

(001-008-05). Normally a capacitor, in the form it is provided, has one or more of negligible but nanoscale capacitors (Graphyne and one or more bending deformation, displacement of the conductive material Graphyne) It can be important.

(001-008-06). In this case, one must be a precise electrical insulation to the state of the device, as well as a thermodynamic definition of the chemical potential, or it is connected to an electrode.

(001-008-07). When electronic energy can be exchanged with a body electrode (reservoir), it is explained by a grand canonical ensemble.

(001-008-08). The value of the chemical potential μ can be said to be fixed by the electrode, and the number N of electrons can vary.

(001-008-09). In this case, the chemical potential of the body is a trace amount, which is a very small amount of work required to increase the average number of electrons (although the number of electrons is always constant, the average number of electrons changes continuously).

Figure pat00020

(001-008-10). F (N, T) is the free energy function of the grand formal ensemble.

(001-008-11). The number of electrons in the body is fixed (but the body is still connected to a heat bath), which is in a formal ensemble.

(001-008-12). We can literally define the "chemical potential" in this case, as the work is already done electronically, exactly N need to add one electron to the body.

Figure pat00021

(001-008-13). As a function of the free energy regular ensemble of F (N, T), or alternatively a work obtained by removing electrons from the body,

Figure pat00022

(001-008-14). These chemical potentials are not the same, except for μ ≠ μ '≠ μ' ', which is a thermodynamic limitation.

(001-008-15). The above difference is important in small systems such as showing Coulomb blockade. In one embodiment of the present invention, adjusting one or more of the heights of the Fermi level (Fermi level) can be described as a form of Coulomb blockade.

(001-008-16). Even if the parameter μ (ie the number of electrons is allowed to fluctuate), the voltmeter voltage remains relevant in a small system.

(001-008-17). To be precise, then, the Fermi level was not defined by the charge event determined by a single electronic charge, rather it is a statistical charge event with an enormous amount of electrons.

(002-001-01). Bending

(002-001-02). In process dynamics (also referred to as flexure) characterizes the motion of a thin structural element subjected to an external load applied perpendicular to the longitudinal axis of the bending element.

(002-001-03). If the length is much longer than the width and thickness, the element is called a beam.

(002-001-04). On the other hand, shells are of the same size in length and width, but they are geometrically shaped structures with very small thicknesses (also called 'walls')

(002-001-05). At the end of it is a large variation that has been loaded into the support side, but a thin wall, bending experience is an example of a shell. In one embodiment of the present invention, the bending deformation of the shell can be explained by the bending deformation of the plate.

(002-002-01). QuasisTaTic bending of beams (QuasisTaTic (semi-static) bending)

(002-002-02). When a transverse load is applied to it, beam deformation and stress are developed into it. In the quasistatic case, it is assumed that the amount of bending deflection and bending stresses does not change over time.

(002-002-03). At the bottom of the beam, the material is supported at the ends while being stretched and loaded downward in the middle, compressing the excess side material of the beam in the horizontal beam. There are two types of internal stresses due to lateral loads:

(002-002-03-1). Lateral load perpendicular to the loading direction, complementary shear stress on the plus plane, shear stress parallel to the stress;

(002-002-03-2). Direct compressive stress on the top of the beam, and tensile stress on the bottom of the beam.

(002-002-04). They are the same size and the opposite direction, and the last two forces in each of the above form a few moments. This bending moment shows a strong resistance to the bending deformation characteristics of the beam. The stress distribution in the beam can be predicted very accurately even when some simple assumptions are used.

(002-003-01). QuasisTaTic bending of plaTes (Quasistatic bending)

(002-003-02). Deformation of a thin plate to emphasize displacement

(002-003-03). The definition of the beam forming function is that one dimension (or dimension) is larger than the other two dimensions (or dimension).

(002-003-04). If it is flat in the above and one of its dimensions (or dimensions) is large, the structure is called a plate. Among the widely used, there are several theories that explain the deformation and stresses of the plate depending on the applied load. These are

(002-003-04-1). The Kirchhoff-Love Theory (also known as the Classic Edition Theory)

(002-003-04-2). The Mindlin-Reissner plate theory (also referred to as the plate primary shear theory)

(002-004-01). Kirchhoff-Love theory of plates

(002-004-02). Kirchhoff - The assumption of love theory

(002-004-02-1). Straight lines perpendicular to the intermediate surface remain after straight after deformation.

(002-004-02-2). Straighten a straight line to the middle surface and maintain it normal to the middle surface.

(002-004-02-3). The thickness of the plate does not change during deformation.

(002-004-03). These assumptions are as follows.

Figure pat00023

Figure pat00024

(002-004-04). here

Figure pat00025
Is the displacement of a point on the plate
Figure pat00026
Is the displacement of the intermediate surface.

(002-004-05). The strain-displacement relationship is shown below.

Figure pat00027

Figure pat00028

Figure pat00029

(002-004-06). Equilibrium equations are as follows.

Figure pat00030

(002-004-07). In the above formula

Figure pat00031
Is the force normally applied to the surface of the plate.

(002-004-08). In terms of displacement, in the absence of an external load, the isotropic linear elastic plate equilibrium equation can be written as

Figure pat00032

In the direct tensor notation method,

Figure pat00033

(002-005-01). Mindlin-Reissner Theory of plaTes (Mindlin-Reissner theory)

(002-005-02). The special assumption of this theory is that the normal to the intermediate surface is straight and unstretchable, but remains normal on the intermediate surface after deformation

(002-005-03). The displacement of the plate is given.

Figure pat00034

Figure pat00035

(002-005-04). In the above formula

Figure pat00036
Is a normal rotation.

(002-005-05). The strain-displacement relationship that occurs in these assumptions is shown below.

Figure pat00037

Figure pat00038

Figure pat00039

(002-005-06). In the above formula

Figure pat00040
Is the shear correction factor. Equilibrium equations are described as follows.

Figure pat00041

Figure pat00042

From here,

Figure pat00043
is.

(002-006-01). Dynamic bending of plaTes (Dynamic plate bending) and Dynamic bending of plaTes (Dynamic plate bending) mean Dynamics of Thin Kirchhoff plaTes (dynamics of thin Kirchhoff plates).

(002-007-01). Dynamics of Thin Kirchhoff plaTes (Dynamics of thin Kirchhoff plates)

(002-007-02). The dynamic theory of plates determines the propagation of waves of plates and applies standing waves vibration modes.

(002-007-03). The equation governing the dynamic bending of the Kirchhoff plates

Figure pat00044
is.

In the above equation, density and plate (plate)

Figure pat00045

Figure pat00046

And

Figure pat00047

(002-007-04). Some vibration mode indication of circular plate.

(002-007-04-1). Mode k = 0, p = 1,

(002-007-04-2). Mode k = 0, p = 2,

(002-007-04-3). Mode k = 1, p = 2,

(001-001) to (002-007-04-3) described above, each of which is composed of (a) and (b). The meaning of the description of one or more of (001-001) to (002-007-04-3) is selected, (b). (001-001) to (002-007-04-3) which are commonly used, and (c). (D) a description of the theory of one or more of (001-001) to (002-007-04-3) selected above, the overall scope of the description, the partial scope of the description; At least one of the above (a) to (d) consisting of at least one selected from the group consisting of an entire element, a partial element, and the like selected from one or more of (001-001) to (002-007-04-3) One or more selected.

In one embodiment of the present invention, the Young's modulus is described as follows.

(001-1). Young's modulus E can be calculated by dividing the tensile stress by the elongation at the elastic (initial linear) part of the stress-strain curve:

Figure pat00048

From here,

(001-2). E is Young's modulus (modulus of elasticity)

(001-3). F is the force acting on the object at tension;

(001-4). A 0 is the original cross-sectional area of the cross-section through which the force is applied

(001-5). ΔL is the amount of length of the object change

(001-6). L 0 is the original length of the object.

(002). The force exerted by stretching or shrinkage material

(002-1). The Young's modulus of the material can be used to calculate the force exerted according to a particular strain (force exerted in a multi-layered state including deformed Graphyne or Graphyne)

Figure pat00049

(002-2). F is the force exerted by the material when it is contracted or stretched by ΔL.

(002-3). Hook's law can be derived from this formula, which explains the ideal spring stiffness:

Figure pat00050

(002-4). It comes from saturation

Figure pat00051
and
Figure pat00052
is.

(003). The elastic potential energy (elastic potential energy provided in the multi-layer state including deformed graphyne or graphyne)

(003-1). The stored elastic position energy is given by the integral of this equation for L:

Figure pat00053

(003-2). Where Ue is the elastic potential energy.

(003-3). Potential elastic energies per unit volume are as follows:

Figure pat00054

(003-4). here

Figure pat00055
Is a variation of material

(003-5). This formula can also be expressed as an integer in Hook's Law:

Figure pat00056

(004). Relationship Between Elastic Constants

(004-1). The simple relationship for homogeneous isotropic materials is based on the assumption that one or two of them are known as elastic constants (Young's modulus E, shear modulus G, bulk modulus K, Poisson's ratio ) v), exists between:

Figure pat00057

(001-1) to (004-1) described above, which is composed of (a) and (b). (001-1) to (004-1), (b). (001-1) to (004-1), and (c). (D) a description of the theory of at least one of (001-1) to (004-1) selected above, the overall scope of the description, the partial scope of the description; One or more of the above-mentioned (a) to (d) consisting of at least one of the whole elements, partial elements, and the like selected from at least one of (001-1) to (004-1) Or more.

In one embodiment of the invention, adjusting one or more of the heights of the Fermi level (Fermi level) may be described as a Coulomb blockade. The Coulomb blockade is described as follows.

(001-1). In physics, named after the electrical force of Charles-Auguste Coulomb, Coulomb blockade (CB) refers to the increased resistance of the small bias voltage of an electronic device containing at least one low-capacitance tunnel junction.

(001-2). (Or called the Pauli blockade) due to interaction between the coulombic blocking electrons when a small number of electrons are involved and an external static magnetic field (in this case, an electrostatic level) is applied, . The Coulomb blockade provides a ground for spin blockade.

(002). Coulomb blockade in a tunnel junction (Coulomb blockade of tunnel junction)

(002-1). Tunnel junctions are the simplest form, meaning that the insulation between the electrodes is thin.

(002-2). According to classical electrodynamic laws, current can not pass through an isolation barrier.

(002-3). However, according to the laws of quantum mechanics, nonvanishing has a probability (greater than zero) and there is an electron (see quantum tunneling) on one side of the barrier reaching the other.

(002-4). When a bias voltage is applied, this current will ignore the additional effect, and the tunneling current is proportional to the bias voltage.

(002-5). From an electrical point of view, the tunnel junction acts as a resistor with a constant resistance known as an ohmic resistor.

(002-6). The resistance is exponentially dependent on the barrier thickness. (In the present invention, it is preferred that the thickness of the barrier is selected from one or more of Piezo, Magnetic, Charged, or Charged Particles. It is understood that at least one of bending deformation, position shifting, and the like is selected for the graphyne so that the insulating layer provided at the upper end of the graphyne is adjusted.

(002-7). Typical barrier thicknesses are several nanometers.

(002-8). In addition, it has an insulating layer between the two conductors (Graphyne and conductive material), but it has no resistance, and it can be interpreted as a finite capacitance.

(002-9). The insulator is also referred to as a dielectric in this context, the tunnel junction acts as a capacitor.

(002-10). Because of the discontinuity of the electric charge, the current through the tunnel junction is described as follows. Exactly one electron is a series of events that pass through a tunnel barrier (tunnel), while at the same time two electrons tunnel (we ignore cotunneling)

(002-11). The tunnel junction capacitor is charged by the tunneling electrons causing the charge voltage to rise at one base charge

Figure pat00058
, Where e is the charge of 1.6 x 10 -19 　 Means Coulomb, and
Figure pat00059
Refers to the capacitance of the junction.

(002-12). If the capacitance is very small, the voltage rise may be large enough to prevent other electrons from tunneling.

(002-13). The current is then suppressed at the lower bias voltage, and the resistance of the device is no longer constant.

(002-14). The increase in differential resistance around the zero bias is called Coulomb blockade.

(003). Describe in the form of a single electron transistor

(003-1). It consists of two electrodes known as drains (conductive material) and source (Graphyne) connected through a tunnel junction to one common electrode (the crossover circuit described in this invention) with a low self-capacitance known as an island.

(003-2). The gate capacitance can be adjusted by a third electrode (intersecting circuit described in this invention, that is, an intersecting barrier adjustment circuit), which is coupled to the island and known as the electrical potential of the island.

(003-3). An energy level that is not accessible in the blocking state is within the electron tunneling range at the source contact.

(003-4). All the energy levels in the island electrode occupy with low energy.

(003-5). When a positive voltage is applied to the gate electrode (cross circuit described in the present invention, that is, crossing barrier adjustment circuit), the energy level of the island electrode is lowered.

(003-5-1). (Graphyne) having an upper part on which one or more of electrons (one action), one or more magnetic particles, particles having electric charges or particles having electric charges are selected, With one or more bending deformation, one of more bending deformation, one of which is to be selected (2 actions), the former will occupy vacant energy levels in the tunnel (3 actions) on the island, previously.

(003-5-2). I can do it from there. The tunnel is located on the drain electrode (4 actions). Will inelastically reach the Fermi level of the scattering and drain electrodes (5 actions).

(003-5-3). In one embodiment of the invention, Graphyne with at least one Piezo material on top after the above (5 actions) is subjected to at least one bending deformation along with an insulating layer provided on top of Graphyne, , Position movement, or more (6 actions).

(003-6). The energy levels of the island electrodes are spaced at equal intervals

Figure pat00060
. This causes the magnetic capacitance
Figure pat00061
, Justice is an island,

Figure pat00062

(003-7). To achieve Coulomb blockade, three conditions must be met:

(003-7-1). The bias voltage should be less than the charge divided by the island's magnetic capacitance:

Figure pat00063

(003-7-2). Thermal energy in the source contact plus the thermal energy in the island,

Figure pat00064
Must be below the charge energy
Figure pat00065
Otherwise, the electrons will be able to pass through the insulating layer through thermal stimulation, and

(003-7-3). The tunneling resistance

Figure pat00066
.
Figure pat00067
Is the derived uncertainty principle of Heisenberg

(001-1) to (003-7-3) described above, which is composed of (a), (b) and (c). The meaning of the description of at least one of (001-1) to (003-7-3) is selected, (b). (001-1) to (003-7-3) which are commonly used, (c). (D) a description of the theory of at least one of (001-1) to (003-7-3) being selected, the overall scope of the description, the partial scope of the description, At least one of (a) to (d) selected from the group consisting of at least one of the whole elements, partial elements, and the like selected from at least one of (001-1) to (003-7-3) One or more

Advantages and features of the present invention and methods for accomplishing the same will become apparent with reference to the embodiments described in detail in some detail. However, the present invention is not limited to the embodiments disclosed in the above embodiments, but may be embodied in various forms.

Known methods, known mathematical formulas, known laws, known papers, known descriptions, devices, device elements, materials, sequences, and techniques, rather than those specifically described herein, will be apparent to those skilled in the art, Can be applied to implementation. All of the techniques, apparatus, devices, materials, sequences, and particularly techniques known in the art, as described herein, may be applied to embodiments of the present invention.

The terms and expressions employed herein are used as terms of description of the invention but are not intended to be limiting and are not intended to limit the terms or expressions of any equivalents to the features described or shown. However, various modifications are possible within the scope of the present invention. It is therefore to be understood that, although the present invention has been disclosed by some preferred embodiments, it is to be understood that the exemplary embodiments and optional features, modifications and variations of the concepts disclosed herein may be reclassified by conventional techniques and the like, May be considered within the scope of the invention as defined by the appended claims.

It is to be understood that the specific embodiments provided herein are illustrative of useful embodiments of the invention and that the present invention may be practiced using many variations of the devices, device components, method steps.

Useful embodiments of the invention may include various optional configuration and procedural components and steps.

When substituted components are disclosed herein, it should be understood that all subgroups and all individual members of the group are disclosed herein.

When a mask group or other groups are used herein, all individual members and all combinations of the groups and possible sub-combinations of the groups are individually included within the disclosed ranges.

Additionally, where no other description is required, in one embodiment of the present invention, modifications of the disclosed materials are intended to be encompassed by the disclosure. For example, one or more magnets may be selected from one or more of a magnet, a magnetic atom, a magnetic particle, a magnetic nanoparticle, a magnetic compound, a magnet compound, a magnet alloy, a nanomagnet compound, a nanomagnet compound, a nanomagnet alloy, And the like.

In an embodiment of the present invention, what has been described in the singular may mean plural. In one embodiment of the present invention, the magnetic particles may mean one or more magnetic particles.

The specific names of the materials or components of the components disclosed or described herein are to be understood as arbitrary examples insofar as those of ordinary skill in the art to which the invention pertain may denote specific names of materials or components of the same component Can be called.

All combinations of the components disclosed or described herein can be used to practice the invention, although not otherwise mentioned. For example, not only when ranges such as temperature, time, concentration, voltage, electricity, atmosphere, etc. are given in detail but all individual values included in the ranges are intended to be included in the disclosed range.

In one embodiment of the present invention, all molecular structures or synthetic molecule combinations or compounds of the components disclosed or described herein can be used to practice the present invention, unless otherwise stated.

It is to be understood that individual values within the scope, sub-scope, and scope of the description included in the description disclosed herein may not appear in the claimed claims herein.

In one embodiment of the present invention, the contents of the present invention have been described at the level of those skilled in the art. In addition, when an important combination is claimed, in one embodiment of the present invention, various types of synthetic materials (e. G., Magnetic composite materials) May be understood to be included in an unintended inclusion of the important combinations claimed herein. Also, when an important combination is claimed, in one embodiment of the present invention, the Piezo material is available in the prior art of the Applicant, The present invention is not limited thereto. Also, when an important combination is claimed, in an embodiment of the present invention, charged particles or charged particles that are provided are particles of known or available charge in the prior art It is to be understood that the various forms are not intended to be encompassed by the important combinations claimed herein.

In one embodiment of the present invention, the present invention, which is described in terms of ranges, subranges, and ranges, can be realized within the scope of the description of the present invention.

Those skilled in the art will appreciate that the various ways of practicing the invention may be employed in the practice of the invention without undue experimentation. Any known and functional equivalents of any materials and methods may be included in one embodiment of the present invention.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but many variations and modifications can be made by one of ordinary skill in the art It is evident that many variations are possible.

Also, the present invention, which is appropriately and diagrammatically illustrated, may be realized without the need of any elements or components, or restrictions or limitations not specifically disclosed.

Any known and functional equivalents of any materials and methods may be applied to embodiments of the present invention.

[references]

(Document 1) Published Online, May 17 2012, Science 1 June 2012: Vol. 336 no. 6085 pp. 1140-1143, DOI: 10.1126 / science.1220527, Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier, Heejun Yang, Jinseong Heo, Seongjun Park, Hyun Jae Song, David H. Seo, Kyung-Eun Byun, Philip Kim, InKyeong Yoo, Hyun-Jong Chung, Kinam Kim

90: refers to one or more of Piezo, a magnetic particle, a charged particle, or a charged particle, and Graphyne.
100: refers to one or more of Piezo material, magnetic particles, charged particles, or charged particles, and Graphyne.
110: refers to one or more of Piezo material, magnetic particle, charged particle, or charged particle, and Graphyne.
200: means one or more graphynes.
300: a material configured to adjust one or more of the height of one or more selected from Graphyne, Schottky Barrier, Fermi level, etc. In one embodiment of the present invention, the multi- . &Lt; / RTI &gt; In one embodiment of the present invention, 300 may mean that at least one of silicon, semiconductor, and the like is selected. In one embodiment of the invention, one or more of the at least one Schottky barrier can be at least one height adjustable, or at least one Fermi level height is adjustable, One or more of the Piezo material, the magnetic particle, the charged particle, or the charged particle is selected (this is located at the bottom of the bottom) and this graphyne (top layer with deformation) An ideal bending deformation, a position movement, or the like, and may be connected to at least one adjustment of the work function. In one embodiment of the invention, one or more of the height of one or more schottky barriers can be adjusted, or one or more of the height of the Fermi level (Fermi level) May refer to a circuit connected to at least one adjustment of the work funiction by having at least one graphyne selected by at least one of bending deformation and position shifting according to the level.
500: In one embodiment of the present invention, it means an environment (for example, a material including at least one selected from 90, 100, 110, or the like) in which the constitution of the drawings is included. In one embodiment of the invention, 500 may mean silicon.
(◆ 300, 500 ◆): means 300 or 500.
600: empty space, or 90 or 100 passages, or 300 passages (some). In one embodiment of the present invention, the empty space means that the vacuum space is selected from a vacuum layer and an air layer (air layer). In one embodiment of the present invention, the passage means a layer selected from at least one of an adhesive layer, a liquid polymer layer, an elastomer layer, an insulating layer, an insulating layer, a vacuum layer, and an air layer (air layer).
610: empty space, or 200 passages, or 300 passages (some). In one embodiment of the present invention, the empty space means that the vacuum space is selected from a vacuum layer and an air layer (air layer). In one embodiment of the present invention, the passage means a layer selected from at least one of an adhesive layer, a liquid polymer layer, an elastomer layer, an insulating layer, an insulating layer, a vacuum layer, and an air layer (air layer).
1000 means that at least one of Piezo (piezoe) material, magnetic particle, charged particle, or charged particle is selected.

Claims (43)

A transistor having at least one of bending deformation, position shift, and the like of Graphine being selected to control at least one work function,
Using the curvature properties of Graphyne, one or more of Piezo, Magnetic, Charged, or Charged particles can be selected at the bottom of Graphyne, Due to the electrostatic level of the intersecting barrier-regulating circuit, one or more Piezo particles, magnetic particles, charged particles, or charged particles may be selected from one or more of Graphyne One or more of the work function (work function) by adjusting one or more of the height of one or more Fermi level (Fermi level) by adjusting one or more work function Transistors; To
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. A transistor having at least one of bending deformation, position shift, and the like of Graphine being selected to control at least one work function,
a. Using the curvature properties of Graphyne, one or more of Piezo, Magnetic, Charged, or Charged particles can be selected at the bottom of Graphyne, Due to the electrostatic level of the intersecting barrier-regulating circuit, one or more Piezo particles, magnetic particles, charged particles, or charged particles may be selected from one or more of Graphyne (Bending deformation), position shift, or one or more of the work function (work function)
b. One or more of a height of at least one Schottky barrier (at least one Fermi level), at least one height of at least one Fermi level (at a Fermi level), and a work function An anomalous transistor; To
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. A transistor having at least one of bending deformation, position shift, and the like of Graphine being selected to control at least one work function,
Using the curvature characteristics of Graphyne, one or more of at least one of magnetic particles, charged particles, or charged particles may be selected at the lower end of the graphyne to control crossing barriers At least one of magnetic particles, particles having electric charge or particles having electric charge is selected because of the electrostatic level of the circuit, and at least one selected from among at least one graphine, bending deformation, A transistor that adjusts one or more work functions by adjusting one or more of the at least one Fermi level to a height of at least one Fermi level; To
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. A transistor having at least one of bending deformation, position shift, and the like of Graphine being selected to control at least one work function,
a. Using the curvature characteristics of Graphyne, one or more of at least one of magnetic particles, charged particles, or charged particles may be selected at the lower end of the graphyne to control crossing barriers At least one of magnetic particles, particles having electric charge or particles having electric charge is selected because of the electrostatic level of the circuit, and at least one selected from among at least one graphine, bending deformation, One or more work functions may be adjusted,
b. One or more of a height of at least one Schottky barrier (at least one Fermi level), at least one height of at least one Fermi level (at a Fermi level), and a work function An anomalous transistor; To
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. A transistor having at least one of bending deformation, position shift, and the like of Graphine being selected to control at least one work function,
Using the curvature characteristics of Graphyne, one or more magnetic particles may be provided at one or more graphene (s) due to the electrostatic level of the intersecting barrier regulating circuit with one or more magnetic particles at the bottom of the graphyne Graphyne) by one or more bending deformation, position movement, or by adjusting one or more work function (work function) by adjusting one or more height of one or more Fermi level (Fermi level) One or more transistors; To
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. A transistor having at least one of bending deformation, position shift, and the like of Graphine being selected to control at least one work function,
a. Using the curvature characteristics of Graphyne, one or more magnetic particles may be provided at one or more graphene (s) due to the electrostatic level of the intersecting barrier regulating circuit with one or more magnetic particles at the bottom of the graphyne Graphyne), one or more of bending deformation, position shifting, or one or more of the work function (work function)
b. One or more of a height of at least one Schottky barrier (at least one Fermi level), at least one height of at least one Fermi level (at a Fermi level), and a work function An anomalous transistor; To
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
The at least one graphyne
A layer selected from at least one of an adhesive layer, a liquid polymer layer, an elastomer layer, a nonconductor layer, an insulating layer, a vacuum layer, and an air layer (air layer) at an upper end of the at least one graphyne; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to claim 2, 4, or 6,
Wherein one or more of the one or more of the at least one Schottky barrier is adjusted in height, the at least one Fermi level is adjusted in height in one or more of the Fermi levels,
Wherein at least one graphyne and one or more silicones are configured to select one or more of a height of one or more Schottky Barriers and a height of one or more Fermi levels and one or more Schottky Barrier ), One or more of which is made up of at least one Fermi level (at least one Fermi level); of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to claim 2, 4, or 6,
Wherein one or more of the one or more of the at least one Schottky barrier is adjusted in height, the at least one Fermi level is adjusted in height in one or more of the Fermi levels,
Wherein one or more of at least one graphyne and at least one of silicon and a semiconductor are selected to be selected from one or more of a height of one or more Schottky barriers and a height of one or more Fermi levels One or more of at least one height adjustment of at least one Schottky barrier, at least one height adjustment of at least one Fermi level; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method of claim 1, 3, or 5,
Adjusting one or more of the heights of the one or more Fermi levels
Wherein one or more of at least one graphine and at least one of a semiconductor, a metal, a silicon, a conductor, and a conductive material constitutes a height of one or more Fermi levels and one or more Fermi levels Adjusting more than one height; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to claim 2, 4, or 6,
Adjusting one or more of the height of the one or more Schottky Barriers
Described by adjusting one or more heights of one or more Fermi levels; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
Wherein at least one of the at least one bending deformation, the position movement,
One layer, a multi-layer state,
At least one Young's modulus is provided; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
The at least one graphyne
A layer selected from the group consisting of a layer having one or more low Young's modulus at the upper end of the at least one graphyne and a layer of a conductive material having a Young's modulus; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
The at least one graphyne
At least one of an adhesive layer, an elastomer, a van der Waals force, and a layer having a Young's modulus at the lower end of the at least one graphyne; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
a. Wherein the at least one magnetic particle comprises
b. Selected from one or more of: one or more magnets, nano-magnet particles, synthetic materials with nano-magnet properties, and synthetic materials with magnet properties; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
a. Wherein at least one of the at least one bending deformation and the position movement is selected,
b. Wherein at least one of the at least one contact angle (Contect Angle) is a point contact of at least one regular shape, irregular Select one or more of the following types of point contact, regular line contact, irregular line contact, regular contact, irregular contact, irregular contact, irregular contact Having one or more of the following: of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
a. Wherein at least one of the at least one bending deformation, the position movement,
b. One or more work function (work function) is provided while having at least one graphyne and a contact angle (Contect Angle)
c. The at least one contact angle may be defined by one or more magnetic particles having one or more of dot contact, surface contact, round contact, regular contact, irregular contact, regular contact, irregular contact, One or more bending deformation of at least one graphyne by one or more of line contact, regular contact, irregular contact, irregular contact, irregular contact, Moving, or more than one selected from; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
a. Wherein at least one of the at least one bending deformation, the position movement,
b. One or more work function (work function) is provided while having at least one graphyne and a contact angle (Contect Angle)
c. The at least one contact angle may be one or more of regularly shaped point contact, irregularly shaped point contact, regularly shaped line contact, irregularly shaped line contact, regularly shaped surface contact, irregularly shaped Having at least one selected from at least one of surface contact, regular contact, and irregular contact, with continuum mechanics being described; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. A transistor having at least one of bending deformation, position shift, and the like of Graphine being selected to control at least one work function,
One or more bending deformation and / or positional movement due to the electrostatic level of the crossover circuit for adjusting the barrier passing over one or more graphynes at the top, (Graphyne) is one or more of the following: one or more of the at least one Schottky barrier, the at least one Fermi level, or at least one of the at least two Fermi levels. A transistor for adjusting at least one work function; To
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
The bending deformation may be a state of a layer selected from one layer, a multilayer state,
a. Bending deformation of beam
b. Bending deformation of plate
c. Bending deformation of one or more layers
d. QuasisTaTic bending of beams (QuasisTaTic (semi-static) bending)
e. QuasisTaTic bending of plaTes (Quasistatic bending)
f. Kirchhoff-Love theory of plates
g. Mindlin-Reissner Theory of plaTes (Mindlin-Reissner theory)
h. Dynamic bending of plaTes
i. Dynamics of Thin Kirchhoff plaTes (Dynamics of thin Kirchhoff plates)
j. curvature
At least one selected from the group consisting of a to j consisting of: of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method of claim 19,
The bending deformation may be a state of a layer selected from one layer, a multilayer state,
a. Bending deformation of beam
b. Bending deformation of plate
c. Bending deformation of one or more layers
d. QuasisTaTic bending of beams (QuasisTaTic (semi-static) bending)
e. QuasisTaTic bending of plaTes (Quasistatic bending)
f. Kirchhoff-Love theory of plates
g. Mindlin-Reissner Theory of plaTes (Mindlin-Reissner theory)
h. Dynamic bending of plaTes
i. Dynamics of Thin Kirchhoff plaTes (Dynamics of thin Kirchhoff plates)
j. curvature
At least one selected from the group consisting of a to j consisting of: of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
Wherein at least one of the at least one bending deformation, the position movement,
Solving the standby power problem by selecting one or more of bending deformation, locating, or the like; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method of claim 19,
Wherein at least one of the at least one bending deformation and the position movement is selected,
Solving the standby power problem by selecting one or more of bending deformation, locating, or the like; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method of claim 19,
The at least one graphyne
At least one vacuum layer at the upper end of the at least one graphyne (Graphyne), an air layer (air layer); of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
Adjusting the height of the Fermi level (Fermi level)
a. parameter
Figure pat00068
Lt; RTI ID =
b. If you supply a state (shape or shape) and electrons at a higher level than the Fermi level, the Fermi level goes up,
c. Providing a state (shape or shape) and an electron simultaneously above the Fermi level,
d. Graphyne is distorted spatially but provides electrons at the same time,
e. Distort Graphyne spatially, providing both state (shape or shape) and electrons,
, And one or more selected from one or more of the above a to e constituted by; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method of claim 19,
Adjusting the height of the Fermi level (Fermi level)
a. parameter
Figure pat00069
Lt; RTI ID =
b. If you supply a state (shape or shape) and electrons at a higher level than the Fermi level, the Fermi level goes up,
c. Providing a state (shape or shape) and an electron simultaneously above the Fermi level,
d. Graphyne is distorted spatially but provides electrons at the same time,
e. Distort Graphyne spatially, providing both state (shape or shape) and electrons,
, And one or more selected from one or more of the above a to e constituted by; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method of claim 19,
Wherein at least one of the at least one bending deformation, the position movement,
At least one Young's modulus is provided; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
Wherein at least one of the at least one bending deformation and the position movement is selected,
a. At least one of which is provided with at least one graphine (first electrode), a conductive material (second electrode) and at least one Fermi level (Fermi level)
b. At least one graphyne (first electrode), a conductive material (second electrode), and at least one height adjustment of at least one Fermi level (Fermi level)
c. A configuration in which at least one graphyne (first electrode) is spaced apart from the conductive material (second electrode) by at least one interval, and one or more fermi levels (height adjustment of the Fermi level)
d. One or more of which is selected at least one of proximity, near enough to place Graphine (the first electrode) adjacent to the conductive material (the second electrode), and at least one Fermi level Fermi level), the height of which is at least one,
e. Graphyne has at least one surface roughness, at least one of which is provided with at least one Fermi level height adjustment,
f. Graphyne has one or more surface textures, one or more of which are provided with at least one Fermi level height adjustment,
g. Graphyne has one or more deviations from the average surface position, but one or more configurations with at least one Fermi level height adjustment,
, And at least one selected from the above a to g consisting of: of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
Wherein at least one of the at least one bending deformation and the position movement is selected,
a. At least one of which is provided with at least one graphine (first electrode), a conductive material (second electrode) and at least one Fermi level (Fermi level)
b. At least one physical contact, at least one of which is provided with at least one graphyne (first electrode), a conductive material (second electrode) and at least one Fermi level height adjustment,
c. At least one graphyne (first electrode), a conductive material (second electrode), and at least one height adjustment of at least one Fermi level (Fermi level)
d. A configuration in which at least one graphyne (first electrode) is spaced apart from the conductive material (second electrode) by at least one interval, and one or more fermi levels (height adjustment of the Fermi level)
e. One or more of the following may be selected: one or more of Graphyne (the first electrode) is attached to one or more of the conductive material (second electrode), adjacent to it, closely adjacent, close enough, One or more configurations with one or more Fermi level height adjustments,
f. Graphyne has at least one surface roughness, at least one of which is provided with at least one Fermi level height adjustment,
g. Graphyne has one or more surface textures, one or more of which are provided with at least one Fermi level height adjustment,
h. Graphyne has one or more deviations from the average surface position, but one or more configurations with at least one Fermi level height adjustment,
, At least one selected from among a to h above constituted by; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method of claim 19,
Wherein at least one of the at least one bending deformation and the position movement is selected,
a. At least one of which is provided with at least one graphine (first electrode), a conductive material (second electrode) and at least one Fermi level (Fermi level)
b. At least one physical contact, at least one of which is provided with at least one graphyne (first electrode), a conductive material (second electrode) and at least one Fermi level height adjustment,
c. At least one graphyne (first electrode), a conductive material (second electrode), and at least one height adjustment of at least one Fermi level (Fermi level)
d. A configuration in which at least one graphyne (first electrode) is spaced apart from the conductive material (second electrode) by at least one interval, and one or more fermi levels (height adjustment of the Fermi level)
e. One or more of the following may be selected: one or more of Graphyne (the first electrode) is attached to one or more of the conductive material (second electrode), adjacent to it, closely adjacent, close enough, One or more configurations with one or more Fermi level height adjustments,
f. Graphyne has one or more surface textures, one or more of which are provided with at least one Fermi level height adjustment,
g. Graphyne has one or more deviations from the average surface position, but one or more configurations with at least one Fermi level height adjustment,
, And at least one selected from the above a to g consisting of: of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method of claim 1, 3, or 5,
Adjusting one or more of the heights of the one or more Fermi levels (Fermi level)
a. In adjusting one or more of the height of one or more Fermi levels (Fermi level) with the conductive material (second electrode) of Graphyne (the first electrode), DiscreTe charging effecTs in small sysTems ) Having one or more configurations for adjusting one or more heights of one or more Fermi levels (Fermi level); of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to claim 2, 4, or 6,
Adjusting one or more of the heights of the one or more Fermi levels (Fermi level)
a. In adjusting one or more of the height of one or more Fermi levels (Fermi level) with the conductive material (second electrode) of Graphyne (the first electrode), DiscreTe charging effecTs in small sysTems ) Having one or more configurations for adjusting one or more heights of one or more Fermi levels (Fermi level); of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method of claim 1, 3, or 5,
Adjusting one or more of the heights of the one or more Fermi levels (Fermi level)
a. Graphyne (first electrode) is described as a conductive material (second electrode) and in the form of one or more coulomb blockades, and having one or more electrically connected structures; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to claim 2, 4, or 6,
Adjusting one or more of the heights of the one or more Fermi levels (Fermi level)
a. Graphyne (first electrode) is described as a conductive material (second electrode) and in the form of one or more coulomb blockades, and having one or more electrically connected structures; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method of claim 19,
Adjusting one or more of the heights of the one or more Fermi levels (Fermi level)
a. In adjusting one or more of the height of one or more Fermi levels (Fermi level) with the conductive material (second electrode) of Graphyne (the first electrode), DiscreTe charging effecTs in small sysTems ) Having one or more configurations for adjusting one or more heights of one or more Fermi levels (Fermi level); of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method of claim 1, 3, or 5,
Adjusting one or more of the heights of the one or more Fermi levels (Fermi level)
a. Graphyne (first electrode) is described as a conductive material (second electrode) and in the form of one or more single electron transistors (single electron transistor), and having one or more electrically connected structures; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to claim 2, 4, or 6,
Adjusting one or more of the heights of the one or more Fermi levels (Fermi level)
a. Graphyne (first electrode) is described as a conductive material (second electrode) and in the form of one or more single electron transistors (single electron transistor), and having one or more electrically connected structures; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
The bending deformation may be a state of a layer selected from one layer, a multilayer state,
a. One or more shapes selected from one or more of dots, ribbons, nanoribbons, strips, corrugations, hills, small faces, small lines, faces, lines; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
The bending deformation may be a state of a layer selected from one layer, a multilayer state,
a. Having at least one wave form selected from one or more of a sine wave, a Gaussian wave, a Lorentzian wave, a periodic wave, an aperiodic wave; of
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
When at least one of the bending deformation and the position movement is selected
The graphyne is selected from among Graphyne, Patterned Graphyne, and Patterned Graphyne quantum dots.
The end portion of the uppermost portion of the deformation of at least one of the bending deformation, the position deformation, and the like is understood as a quantum dot; To
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
When at least one of the bending deformation and the position movement is selected
The above-mentioned Graphyne is provided with an ultra thin film, a vapor deposition film, an ultra thin film or a vapor deposition film on the upper part of Graphyne, and then the quantum dots of the patterned ultra thin film or the vapor deposition film, the patterned Graphyne and the quantum dots of the patterned Graphyne , &Lt; / RTI &gt; and Graphyne,
The end portion of the uppermost portion of the deformation of at least one of the bending deformation, the position deformation, and the like is understood as a quantum dot; To
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. The method according to any one of claims 1 to 6,
A transistor having at least one of bending deformation, position shifting, etc. of the graphyne selected and having at least one function for adjusting a work function
One or more one-dimensional, two-dimensional, three-dimensional, or one-to-one correspondence with one or more selected from the group consisting of a CPU, a memory, a semiconductor integrated circuit, a microprocessor, One or more selected from the above; To
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function. 42. The method according to any one of claims 1 to 41,
A transistor having at least one of bending deformation, position shifting, etc. of the graphyne selected and having at least one function for adjusting a work function
One or more one-dimensional, two-dimensional, three-dimensional, or one-to-one correspondence with one or more selected from the group consisting of a CPU, a memory, a semiconductor integrated circuit, a microprocessor, One or more selected from the above; To
Wherein at least one of bending deformation and position movement of the graphyne is selected so as to adjust at least one work function.
KR1020140061222A 2014-05-21 2014-05-21 Graphyne transistors by using the selected one or more of Graphyne bending deformation, Graphyne position move, that the one or more of work-function controlling of the transistors KR20150134188A (en)

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