KR20170064164A - Organic light emitting diode display device - Google Patents

Abstract

The organic light emitting diode display device of the present invention includes an anti-reflection layer corresponding to a white pixel region and located between the organic light emitting diode and the substrate and including a blue color filter material pattern and a color conversion pattern, .

Description

[0001] The present invention relates to an organic light emitting diode (OLED) display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light emitting diode display device, and more particularly, to an organic light emitting diode display device capable of reducing external light reflection.

As the information society develops, the demand for display devices for displaying images is increasing in various forms. A liquid crystal display (LCD) device, a plasma display panel (PDP), or an organic light emitting diode (OLED), which is thinner and lighter than a conventional cathode ray tube (CRT) )) Display device has been actively studied.

Among the above flat panel display devices, the organic light emitting diode display device includes an organic light emitting diode, which is a self-light emitting element, as an essential component, and a light weight thin type is possible because a backlight used in a liquid crystal display device as a non-light emitting device is not required.

In addition, it is advantageous in terms of power consumption as compared with liquid crystal display devices, has low voltage driving capability, and has a high response speed.

In particular, since the manufacturing process is simple, it is advantageous in that the production cost can be saved more than the conventional liquid crystal display equipment.

The organic light emitting diode display device emits red, green, and blue light by forming a red light emitting layer, a green light emitting layer, and a blue light emitting layer for red, green, and blue pixel regions, thereby realizing a full color image.

In order to form the red light emitting layer, the green light emitting layer, and the blue light emitting layer for each pixel region, a deposition process using a fine metal mask is required. However, since such a structure has a limitation in manufacturing a large-area organic light emitting diode display device, a light emitting diode that emits white light is formed over the entire pixel region, and a light emitting diode having a red / green / blue / A light emitting diode (WOLED) display device has been proposed.

1 is a schematic cross-sectional view of a conventional W-OLED display device.

1, the W-OLED display 1 includes a first substrate 10 having red, green, blue and white pixel regions Rp, Gp, Bp and Wp defined therein, An organic light emitting diode 20 positioned on the first substrate 10, a second substrate 30 facing the first substrate 10 and a second substrate 30 located on the second substrate 30, And a color filter layer 40 corresponding to the pixel regions Rp, Gp, and Bp.

Although not shown, a driving element such as a thin film transistor (TFT) is disposed for each pixel region on the first substrate 10, and the organic light emitting diode 20 includes a first electrode, Electrode. The first electrode may be patterned for each pixel region and connected to the driving element.

The color filter layer 40 includes red, green, and blue color filter patterns 42, 44, and 46 corresponding to the red, green, and blue pixel regions Rp, Gp, and Bp, respectively.

The white light emitted from the organic light emitting diode 20 passes through the red, green and blue color filter patterns 42, 44 and 46 so that the W-OLED display 1 realizes a full color image.

However, in the white pixel region Wp, the external light is reflected by the first electrode and / or the second electrode of the organic light emitting diode 20, and the display quality is degraded.

The present invention seeks to solve the problem of external light reflection of an organic light emitting diode display.

In order to solve the above problems, the present invention provides an organic light emitting display comprising an anti-reflection layer corresponding to a white pixel region and located between a substrate and the organic light emitting diode and including a blue color filter material pattern and a color conversion pattern, And the organic light emitting diode is disposed between the color conversion pattern and the organic light emitting diode.

Also, in each of the red and green pixel regions, the color filter pattern includes a color conversion pattern and a color filter material pattern.

The color conversion pattern includes a color conversion material that absorbs light in a short wavelength region and emits light in a long wavelength region.

In the organic light emitting diode display device of the present invention, reflection of external light in the white pixel region can be reduced by forming an antireflection layer having a structure in which a color conversion pattern and a blue color filter pattern are laminated in a white pixel region.

Further, by laminating the red color filter pattern and the color conversion pattern in the red pixel region and laminating the green color filter pattern and the color conversion pattern in the green pixel region, the luminous efficiency in the red and green pixel regions can be improved.

Accordingly, it is possible to provide an organic light emitting diode display device improved in display quality and luminous efficiency without reflecting external light.

1 is a schematic cross-sectional view of a conventional W-OLED organic light emitting diode display.
2 is a schematic cross-sectional view of an organic light emitting diode display device according to a first embodiment of the present invention.
3 is a schematic cross-sectional view of an organic light emitting diode.
4 is a schematic cross-sectional view of an organic light emitting diode display device according to a second embodiment of the present invention.
5A and 5B are views for explaining external light transmission according to a lamination structure in a white pixel region.
6A and 6B are views for explaining light transmission from an organic light emitting diode according to a lamination structure in a white pixel region.
7 is a graph showing the transmission spectrum of external light in the white pixel region of the organic light emitting diode display according to the second embodiment of the present invention.
8 is a graph showing a light transmission spectrum from an organic light emitting diode in a white pixel region of an OLED display according to a second embodiment of the present invention.
9 is a schematic cross-sectional view of an organic light emitting diode display device according to a third embodiment of the present invention.
10 is a schematic cross-sectional view of an organic light emitting diode display device according to a fourth embodiment of the present invention.

The organic light emitting diode includes a first substrate including a white pixel region, a second substrate facing the first substrate, an organic light emitting diode disposed between the first and second substrates and emitting white light, And an anti-reflection layer corresponding to the pixel region and located between the first substrate and the organic light emitting diode, the anti-reflection layer including a blue color filter material pattern and a first color conversion pattern, And an organic light emitting diode (OLED) display device disposed between the pattern and the organic light emitting diode.

In the organic light emitting diode display of the present invention, the first substrate may further include a red pixel region, and the red pixel region may be located between the first substrate and the organic light emitting diode, A red color filter pattern including a color conversion pattern is disposed and the second color conversion pattern may be positioned between the red color filter pattern and the organic light emitting diode.

In the organic light emitting diode display of the present invention, the first substrate may further include a green pixel region, and the green pixel region may be located between the first substrate and the organic light emitting diode, A green color filter pattern including a color conversion pattern is disposed and the third color conversion pattern may be located between the green color filter pattern and the organic light emitting diode.

In the organic light emitting diode display of the present invention, the first substrate may further include a blue pixel region, and the blue pixel region may include a single-layer blue color filter pattern.

In the organic light emitting diode display of the present invention, the anti-reflection layer and the blue color filter pattern may have the same thickness.

The organic light emitting diode display of the present invention may further include a thin film transistor disposed on the first substrate, the organic light emitting diode includes a first electrode connected to the thin film transistor, A second electrode positioned between the electrode and the second substrate; and an organic light emitting layer disposed between the first and second electrodes, wherein the anti-reflective layer is disposed between the first electrode and the first substrate have.

The organic light emitting diode display of the present invention may further include a thin film transistor disposed on the first substrate, the organic light emitting diode includes a first electrode connected to the thin film transistor, A second electrode disposed between the electrode and the second substrate; and an organic light emitting layer disposed between the first and second electrodes, wherein the anti-reflective layer is disposed between the second electrode and the second substrate have.

In the organic light emitting diode display of the present invention, the first color conversion pattern may include a color conversion material that absorbs light in a short wavelength region and emits light in a long wavelength region.

In the organic light emitting diode display of the present invention, the color conversion material may be a fluorescent dye or a quantum dot.

In the organic light emitting diode display of the present invention, the organic light emitting diode may include first and second electrodes facing each other, and first and second electrodes disposed between the first and second light emitting units and the first and second light emitting units, And a charge generation layer disposed between the second light emitting units.

Hereinafter, an organic light emitting diode display device and a method of manufacturing the same according to the present invention will be described with reference to the accompanying drawings.

- First Embodiment -

2 is a schematic cross-sectional view of an organic light emitting diode display device according to a first embodiment of the present invention.

2, the organic light emitting diode display 100 according to the first embodiment of the present invention includes a first pixel region Rp, Gp, Bp, and Wp defining red, green, blue, and white pixel regions Rp, Gp, Bp, An organic light emitting diode 120 disposed on the first substrate 110; a second substrate 130 facing the first substrate 110; A color filter layer 140 positioned inside the organic light emitting diode 120 and corresponding to the red, green and blue pixel regions Rp, Gp and Bp, And a polarizing plate 150 that is polarized.

Although not shown, a driving element such as a thin film transistor (TFT) is positioned in each pixel region on the first substrate 110, and the organic light emitting diode 120 is electrically connected to the driving element.

3, which is a schematic cross-sectional view of an organic light emitting diode, the organic light emitting diode 120 includes a first electrode 160 which is an anode and a second electrode 160 which faces the first electrode 160, Two electrodes 162 and a first light emitting unit 170, a charge generating layer 190 and a second light emitting unit 180 which are sequentially stacked between the first and second electrodes 160 and 162 do. That is, the charge generation layer 190 is located between the first and second light emitting units 170 and 180.

For example, the first light emitting unit 170 may include a hole injection layer 172, a first hole transport layer 174, and a first light emitting material layer 170, which are sequentially stacked on the first electrode 160, The second light emitting unit 180 includes a second hole transporting layer 182 and a second hole transporting layer HTL2 sequentially stacked on the charge generating layer 190. The second light emitting unit 180 includes a first hole transporting layer 176 and an EML1, A second light emitting material layer 184, an EML 2, a second electron transporting layer 186, an ETL 2, and an electron injecting layer 188 (EIL).

For example, one of the first and second emissive material layers 176 and 184 emits blue light and the other of the first and second emissive material layers 176 and 184 emits green, yellowgreen) or an orange color.

When a voltage is applied to the organic light emitting diode 120, white light is emitted from the organic light emitting layer.

The color filter layer 140 includes red, green, and blue color filter patterns 142, 144, and 146 corresponding to the red, green, and blue pixel regions Rp, Gp, and Bp, respectively.

The white light emitted from the organic light emitting diode 120 passes through the red, green and blue color filter patterns 42, 44 and 46 so that red, green and blue light respectively pass through the second substrate 130 And white light is displayed on the second substrate 130 in the white pixel region Wp.

The polarizer 150 is attached to the display surface of the organic light emitting diode display 100, that is, the outer surface of the second substrate 130 to prevent external light from being reflected to the organic light emitting diode 120. For example, the polarizer 150 may be a right-handed circular polarization plate or a left-handed circular polarization plate.

The first light L1 that is external light passes through the polarizer 150 and becomes a second light L2 having either a right circularly polarized light or a left circularly polarized light and is reflected by the organic light emitting diode 120, Or the third light L3 having the other one of the left-handed circularly polarized light. Since the third light L3 is blocked by the polarizing plate 150, it is possible to prevent the ambient light contrast ratio from lowering due to external light reflection in the organic light emitting diode display device 100. [

However, the use of the expensive polarizing plate 150 increases the manufacturing cost, and the polarizing plate 150 lowers the transmittance of the red, green, and blue pixel regions Rp, Gp, and Bp. Further, the polarizing plate 150 causes a problem of increasing the thickness of the organic light emitting diode display device 100. [

- Second Embodiment -

4 is a schematic cross-sectional view of an organic light emitting diode display device according to a second embodiment of the present invention.

4, the organic light emitting diode display 200 according to the second embodiment of the present invention includes a first pixel region Rp, Gp, Bp, and Wp in which red, green, blue, and white pixel regions Rp, Gp, Bp, An organic light emitting diode 240 positioned between the first substrate 210 and the second substrate 260 and a second substrate 260 facing the first substrate 210, A color filter layer 220 located between the organic light emitting diode 240 and the first substrate 210 and corresponding to the red, green and blue pixel regions Rp, Gp and Bp, and the organic light emitting diode 240 And an anti-reflection layer 230 positioned between the first substrate 210 and the first substrate 210 and corresponding to the white pixel region Wp.

The first substrate 210 is made of a transparent material. For example, the first substrate 210 may be made of plastic or glass such as polyimide. Meanwhile, the second substrate 260 may be made of a transparent or opaque material. For example, the second substrate 260 may be formed of glass, plastic such as polyimide, metal foil, or the like.

An adhesive layer 250 is disposed between the second substrate 260 and the organic light emitting diode 240 and a barrier layer 260 is formed on the organic light emitting diode 240 and the adhesive layer 250 to prevent penetration of external moisture. (Not shown) may be formed.

For example, the barrier layer may have a triple layer structure of an inorganic layer, an organic layer, and an inorganic layer sequentially stacked on the organic light emitting diode 240.

Although not shown, a gate wiring and a data wiring which define the red, green, blue and white pixel regions Rp, Gp, Bp and Wp are formed on the first substrate 210, Or a power wiring extending and parallel to the data wiring is formed.

A thin film transistor 212 as a driving element is disposed in each pixel region Rp, Gp, Bp, and Wp.

For example, the thin film transistor 212 may include a semiconductor layer, a gate electrode positioned above the semiconductor layer, and a source electrode and a drain electrode spaced from each other above the gate electrode and connected to the semiconductor layer .

Further, a switching element electrically connected to the thin film transistor 212, the gate wiring, and the data wiring is connected to each pixel region Rp, Gp, Bp, and Wp, and a storage capacitor connected to the switching element and the power wiring, May be formed on the first substrate 210.

When a switching element is turned on according to a gate signal applied to a gate wiring, a data signal applied to the data wiring is applied to the gate electrode of the thin film transistor 212 as a driving element through the switching element, Electrode.

The thin film transistor 212 as the driving element is turned on in accordance with the data signal applied to the gate electrode so that a current proportional to the data signal is supplied from the power wiring through the thin film transistor 212 as the driving element to the organic light emitting diode 240 And the organic light emitting diode 240 emits light with a luminance proportional to the current flowing through the thin film transistor 212 as a driving element.

At this time, the storage capacitor is charged with a voltage proportional to the data signal so that the voltage of the gate electrode of the thin film transistor 212, which is a driving element, remains constant during one frame.

The color filter layer 220 may be disposed on the first substrate 210 or on the first substrate 210 and may include red color filters corresponding to the red, green, and blue pixel regions Rp, Gp, and Bp, Pattern 222, a green color filter pattern 224, and a first blue color filter pattern 226.

The red color filter pattern 222 includes a red pigment or a red dye. When white light is incident, the red color filter pattern 222 absorbs light of a green wavelength range from a blue wavelength and transmits light of a red wavelength.

The green color filter pattern 224 includes a green pigment or a green dye. When the white light is incident, the green color filter pattern 224 absorbs light in the red wavelength region and blue wavelength region, .

The blue color filter pattern 226 includes a blue pigment or a blue dye. When the white light is incident, the blue color filter pattern 226 absorbs light in the red wavelength range from the green wavelength and transmits the blue wavelength light.

The anti-reflection layer 230 is disposed on the first substrate 210 or on the first substrate 210. That is, the anti-reflection layer 230 is positioned between the first substrate 210 and the organic light emitting diode 240 in the white pixel region Wp.

The antireflective layer 230 includes a color conversion pattern 232 and a blue color filter material pattern 234. The color conversion pattern 232 is located between the first substrate 210 and the blue color filter material pattern 234. That is, the blue color filter material pattern 234 is located between the color conversion pattern 232 and the organic light emitting diode 240.

The anti-reflection layer 230 may have substantially the same thickness as the red, green, and blue color filter patterns 222, 224, and 226.

The blue color filter material pattern 234 includes a blue pigment or a blue dye in the same manner as the blue color filter pattern 226 and absorbs light in a red wavelength range from a green wavelength when white light is incident. And transmits the blue wavelength light.

The color conversion pattern 232 absorbs light in a short wavelength region and emits light in a long wavelength region. That is, when the white light is incident on the color conversion pattern 232, the color conversion pattern 232 absorbs a part of the blue wavelength region light and emits green and red light. The green and red wavelength region light of the first luminance and the second and third luminance larger than the first luminance are transmitted through the color conversion pattern 232 or emitted from the color conversion pattern 232 do.

The color conversion pattern 232 includes a color conversion material (CCM). For example, the color conversion material may be a perylene-based fluorescent dye, a coumarin-based fluorescent dye, a xanthone-based fluorescent dye, or a quantum dot.

The color conversion material may be selected from materials of the following formulas.

[Chemical Formula]

The color filter layer 220 and the antireflection layer 230 may be disposed in contact with the first substrate 210. The color filter layer 220 and the antireflection layer 230 may be disposed in contact with the first substrate 210, An insulating layer (not shown) may be disposed on the insulating layer 210.

The organic light emitting diode 240 is disposed on or above the color filter layer 220 and the antireflection layer 230 and includes a first electrode 242, a second electrode 246, And an organic light emitting layer 244 located between the electrodes 242 and 246.

The first electrode 242 is disposed on or above the color filter layer 220 and the antireflection layer 230 and is formed separately for each pixel region Rp, Gp, Bp, and Wp. The first electrode 242 is connected to the thin film transistor 212.

The first electrode 242 may be an anode and may be formed of a conductive material having a relatively large work function value. For example, the first electrode 242 may be made of a transparent conductive material such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) .

The organic light emitting layer 244 is disposed on the first electrode 242 and emits white light.

3, the organic light emitting layer 244 may include a first light emitting unit 170, a charge generating layer 190, and a second light emitting unit 180.

The organic light emitting layer 244 is formed integrally with the entire display region including the red, green, blue and white pixel regions Rp, Gp, Bp and Wp. Alternatively, the organic light emitting layer 244 may be formed separately for the red, green, blue, and white pixel regions Rp, Gp, Bp, and Wp.

The second electrode 246 is located on the organic light emitting layer 244 and is formed integrally with the entire display region including the red, green, blue and white pixel regions Rp, Gp, Bp and Wp.

The second electrode 246 may be formed of a conductive material having a relatively small work function value and may be used as a cathode. For example, the second electrode 246 may be formed of any one of aluminum (Al), magnesium (Mg), and aluminum-magnesium alloy (AlMg).

A bank layer 248 covering an edge of the first electrode 242 is formed under the organic light emitting layer 244. The bank layer 248 may be omitted.

When a voltage is applied to the organic light emitting diode 240, white light is emitted from the organic light emitting diode 240, and light emitted from the organic light emitting diode 240 passes through the color filter layer 220 and the anti-reflection layer 330, 210). That is, the organic light emitting diode display 200 according to the second embodiment of the present invention is a bottom-emission type.

In the organic light emitting diode display 200 according to the second embodiment of the present invention, an anti-reflection layer 230 including a color conversion pattern 232 and a blue color filter material pattern 234 is formed on the white pixel region Wp Reflection of external light in the white pixel region Wp can be reduced.

5A and 5B are views for explaining external light transmission according to a lamination structure in a white pixel region.

5A, when the external light passes through the color conversion patterns 232 and CCM through the first substrate 210, sub, it absorbs a part of the blue wavelength region light B to form green and red wavelengths And emits region light (G, R). That is, as compared with the external light, the luminance of the blue wavelength region light decreases and the luminance of the green and red wavelength region light remains substantially the same. Next, the red and green wavelength region light is absorbed while passing through the blue color filter material pattern 234 (B-CF), and only the blue wavelength region light of reduced brightness is irradiated to the organic light emitting diode (240 in FIG. 4). Therefore, the reflection of external light in the white pixel region Wp is reduced.

5B, when the stacking order of the color conversion pattern CCM and the blue color filter material pattern B-CF is changed, the external light emitted to the organic light emitting diode 240 increases.

That is, as in the present invention, when the anti-reflection layer 230 including the color conversion pattern 232 and the blue color filter material pattern 234 is formed in the white pixel region Wp while the color conversion pattern 232 is a blue color, When positioned between the filter material pattern 234 and the first substrate 210 located in the image display direction, the external light reflection is minimized.

6A and 6B are views for explaining light transmission from an organic light emitting diode according to a lamination structure in a white pixel region.

6A, the white light emitted from the organic light emitting diode 240 (D) passes through the blue color filter material pattern 234 (B-CF), while only the blue light is transmitted, and the color conversion pattern 232 (CCM) And becomes white light of red, green, and blue. Therefore, even if the anti-reflection layer 230 including the color conversion pattern 232 and the blue color filter material pattern 234 is formed in the white pixel region Wp, as in the present invention, there is no problem in implementing the white light .

On the other hand, as shown in FIG. 6B, when the stacking order of the color conversion pattern CCM and the blue color filter material pattern B-CF is changed, a problem arises in the implementation of white light.

That is, as in the present invention, when the color conversion pattern 232 is formed between the blue color filter material pattern 234 and the first substrate 210 located in the image display direction, The organic light emitting diode display device 200 formed on the organic light emitting diode display panel Wp can realize a full color image while minimizing external light reflection.

FIG. 7 is a graph showing the transmission spectrum of external light in the white pixel region of the organic light emitting diode display according to the second embodiment of the present invention, and FIG. 8 is a graph showing the transmittance spectrum of the organic light emitting diode display according to the second embodiment, And a light transmission spectrum from the organic light emitting diode in the pixel region. ("B-CF + CCM" is an organic light emitting diode display device in which only a blue color filter material pattern is formed in a white pixel region, "B- "Ref" is an organic light emitting diode display device in the case where there is no blue color filter material pattern and color conversion pattern).

7 and 8, the organic light emitting diode display 200 according to the second embodiment of the present invention includes the color conversion pattern 232 corresponding to the white pixel region Wp, By including the antireflection layer 230 positioned between the pattern 234 and the first substrate 210 positioned in the image display direction, it is possible to reduce external light reflection and realize white light.

Accordingly, it is possible to provide the organic light emitting diode display device 300 having a minimum brightness and no external light reflection without a polarizing plate for preventing external light reflection. In addition, since the external light reflection can be reduced without the polarizer, a thin organic light emitting diode display device 200 can be provided.

- Third Embodiment -

9 is a schematic cross-sectional view of an organic light emitting diode display device according to a third embodiment of the present invention.

9, the organic light emitting diode display 300 according to the third embodiment of the present invention includes a first pixel region 300 having red, green, blue, and white pixel regions Rp, Gp, Bp, A substrate 310, a second substrate 360 facing the first substrate 310, an organic light emitting diode 340 disposed between the first substrate 310 and the second substrate 360, A color filter layer 320 disposed between the organic light emitting diode 340 and the second substrate 360 and corresponding to the red, green and blue pixel regions Rp, Gp and Bp, and the organic light emitting diode 340 And an antireflection layer 330 positioned between the first substrate 360 and the second substrate 360 and corresponding to the white pixel region Wp.

The first substrate 310 may be made of a transparent or opaque material. For example, the first substrate 310 may be formed of glass, plastic such as polyimide, metal foil, or the like. Meanwhile, the second substrate 360 is made of a transparent material. For example, the second substrate 360 may be made of plastic or glass such as polyimide.

An adhesive layer 350 is disposed between each of the color filter layer 320 and the antireflection layer 330 and the organic light emitting diode 340. The organic light emitting diode 340 and the adhesive layer 350 are formed of A barrier layer (not shown) for preventing penetration may be formed.

For example, the barrier layer may have a triple layer structure of an inorganic layer, an organic layer, and an inorganic layer sequentially stacked on the organic light emitting diode 340.

Although not shown, a gate wiring and a data wiring which define the red, green, blue and white pixel regions Rp, Gp, Bp and Wp are formed on the first substrate 310 so as to intersect with each other, Or a power wiring extending and parallel to the data wiring is formed.

In each pixel region Rp, Gp, Bp, and Wp, a thin film transistor 312 as a driving element is located.

For example, the thin film transistor 312 may include a semiconductor layer, a gate electrode positioned above the semiconductor layer, and a source electrode and a drain electrode spaced from each other above the gate electrode and connected to the semiconductor layer .

In addition, a switching element electrically connected to the thin film transistor 312, the gate wiring, and the data wiring is connected to each pixel region Rp, Gp, Bp, and Wp, and a storage capacitor connected to the switching element and the power wiring May be formed on the first substrate 310.

When the switching element is turned on in response to a gate signal applied to the gate wiring, a data signal applied to the data wiring is applied to the gate electrode of the thin film transistor 312 as a driving element through the switching element, Electrode.

The thin film transistor 312 as the driving element is turned on in accordance with the data signal applied to the gate electrode so that a current proportional to the data signal is supplied from the power wiring through the thin film transistor 312 as the driving element to the organic light emitting diode 340 And the organic light emitting diode 340 emits light with a luminance proportional to the current flowing through the thin film transistor 312 as the driving element.

At this time, the storage capacitor is charged with a voltage proportional to the data signal so that the voltage of the gate electrode of the thin film transistor 312, which is a driving element, remains constant during one frame.

An insulating layer 314 is formed on the thin film transistor 312. The insulating layer 314 may be formed of an inorganic insulating material such as silicon oxide, silicon nitride, or an organic insulating material such as photoacryl.

The insulating layer 314 may expose the drain electrode of the thin film transistor 312.

The organic light emitting diode 340 is disposed on the insulating layer 314 and includes a first electrode 342, a second electrode 346, an organic layer 342 disposed between the first and second electrodes 342 and 346, And a light emitting layer 344.

The first electrode 342 is located on the insulating layer 314 and is formed separately for each pixel region Rp, Gp, Bp, and Wp. The first electrode 342 is connected to the thin film transistor 312.

The first electrode 342 may be an anode and may be formed of a conductive material having a relatively large work function value. For example, the first electrode 342 may be made of a transparent conductive material such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) .

A reflective electrode or a reflective layer may be further formed on and / or below the first electrode 342. For example, the reflective electrode or the reflective layer may be formed of an aluminum-palladium-copper (APC) alloy. That is, the first electrode 342 may have a two-layer structure of a transparent conductive electrode, a reflective electrode, or a reflective layer, or may have a triple-layer structure in which a reflective electrode or a reflective layer is positioned above and below the transparent conductive electrode.

The organic light emitting layer 344 is disposed on the first electrode 342 and emits white light.

3, the organic light emitting layer 344 may include a first light emitting unit 170, a charge generating layer 190, and a second light emitting unit 180. As shown in FIG.

The organic light emitting layer 344 is formed integrally with the entire display region including the red, green, blue and white pixel regions Rp, Gp, Bp and Wp. Alternatively, the organic light emitting layer 344 may be formed separately for red, green, blue, and white pixel regions Rp, Gp, Bp, and Wp.

The second electrode 346 is located on the organic light emitting layer 344 and is formed integrally with the entire display region including the red, green, blue and white pixel regions Rp, Gp, Bp and Wp.

The second electrode 346 may be formed of a conductive material having a relatively small work function value and may be used as a cathode. For example, the second electrode 346 may be formed of any one of aluminum (Al), magnesium (Mg), and aluminum-magnesium alloy (AlMg).

The second electrode 346 has a thin thickness and may have a semi-transmissive property.

A bank layer 348 covering the edge of the first electrode 342 is formed under the organic light emitting layer 344. The bank layer 348 may be omitted.

As described above, a barrier layer (not shown) is formed on the organic light emitting diode 240 to prevent the organic light emitting diode 240 from being damaged by moisture.

The color filter layer 320 is disposed on the second substrate 360 or on the second substrate 360 and includes a red color filter 341 corresponding to each of the red, green, and blue pixel regions Rp, Gp, and Bp, Pattern 322, a green color filter pattern 324, and a blue color filter pattern 326.

The red color filter pattern 322 includes a red pigment or a red dye. When white light is incident, the red color filter pattern 322 absorbs light of a green wavelength range from a blue wavelength and transmits light of a red wavelength.

The green color filter pattern 324 includes a green pigment or a green dye. When the white light is incident, the green color filter pattern 324 absorbs light in the red wavelength region and blue wavelength region, .

The blue color filter pattern 326 includes a blue pigment or a blue dye. When the white light is incident, the blue color filter pattern 326 absorbs the light of the red wavelength range from the green wavelength and transmits the blue wavelength light.

The antireflection layer 330 is located on the second substrate 360 or on the second substrate 360. That is, the anti-reflection layer 330 is located between the second substrate 360 and the organic light emitting diode 340 in the white pixel region Wp.

The antireflective layer 330 includes a color conversion pattern 332 and a blue color filter material pattern 334. The color conversion pattern 332 is located between the second substrate 360 and the blue color filter material pattern 334. That is, the blue color filter material pattern 334 is located between the color conversion pattern 332 and the organic light emitting diode 340.

The anti-reflection layer 330 may have substantially the same thickness as the red, green, and blue color filter patterns 322, 324, and 326.

The blue color filter material pattern 334 includes a blue pigment or a blue dye. When the white light is incident, the blue color filter material pattern 334 absorbs light in the red wavelength range from the green wavelength, and transmits the blue wavelength light.

The color conversion pattern 332 absorbs light in a short wavelength region and emits light in a long wavelength region. That is, when the white light is incident on the color conversion pattern 332, the color conversion pattern 332 absorbs a part of the blue wavelength region light to emit green and red light. Therefore, the blue wavelength region light of the first luminance and the green and red wavelength region light of the second and third luminance larger than the first luminance are transmitted through the color conversion pattern 332 or emitted from the color conversion pattern 332 do.

The color conversion pattern 332 includes a color conversion material (CCM). For example, the color conversion material may be a perylene-based fluorescent dye, a coumarin-based fluorescent dye, a xanthone-based fluorescent dye, or a quantum dot.

The color conversion material may be selected from materials of the following formulas.

[Chemical Formula]

The second substrate 360 on which the color filter layer 320 and the antireflection layer 330 are formed is attached to the first substrate 310 by the adhesive layer 350.

When a voltage is applied to the organic light emitting diode 340, white light is emitted from the organic light emitting diode 340 and the emitted light passes through the color filter layer 320 and the anti-reflection layer 330, 360). That is, the organic light emitting diode display device 300 according to the third embodiment of the present invention is a top emission type.

The organic light emitting diode display 300 according to the third embodiment of the present invention includes an anti-reflection layer 330 including a color conversion pattern 332 and a blue color filter material pattern 334 in the white pixel region Wp So that the reflection of external light in the white pixel region Wp can be reduced and a full color image can be realized.

5A, external light sequentially passes through the color conversion pattern 332 and the blue color filter material pattern 334, and the light amount is reduced, so that the external light reflection is reduced.

6A, the light emitted from the organic light emitting diode 340 may pass through the blue color filter material pattern 334 and the color conversion pattern 332 in sequence to realize white light.

Accordingly, it is possible to provide the organic light emitting diode display device 300 having a minimum brightness and no external light reflection without a polarizing plate for preventing external light reflection. In addition, since the external light reflection can be reduced without the polarizer, a thin organic light emitting diode display device 300 can be provided.

- Fourth Embodiment -

10 is a schematic cross-sectional view of an organic light emitting diode display device according to a fourth embodiment of the present invention.

10, the organic light emitting diode display 400 according to the fourth embodiment of the present invention includes a first pixel region Rp, Gp, Bp, and Wp defining red, green, blue, and white pixel regions Rp, Gp, An organic light emitting diode 440 disposed between the first substrate 410 and the second substrate 460, and a second substrate 460 facing the first substrate 410. [ A color filter layer 420 positioned between the organic light emitting diode 440 and the second substrate 460 and corresponding to the red, green and blue pixel regions Rp, Gp and Bp, and the organic light emitting diode 440 And an anti-reflection layer 430 positioned between the first substrate 460 and the second substrate 460 and corresponding to the white pixel region Wp.

The first substrate 410 may be made of a transparent or opaque material. For example, the first substrate 410 may be formed of glass, plastic such as polyimide, metal foil, or the like. Meanwhile, the second substrate 460 is made of a transparent material. For example, the second substrate 460 may be made of plastic or glass such as polyimide.

An adhesive layer 450 is disposed between each of the color filter layer 420 and the antireflection layer 430 and the organic light emitting diode 440. On the organic light emitting diode 440 and the adhesive layer 450, A barrier layer (not shown) for preventing penetration may be formed.

For example, the barrier layer may have a triple layer structure of an inorganic layer, an organic layer, and an inorganic layer sequentially stacked on the organic light emitting diode 440.

Although not shown, a gate wiring and a data wiring which define the red, green, blue and white pixel regions Rp, Gp, Bp and Wp intersect each other are formed on the first substrate 410, Or a power wiring extending and parallel to the data wiring is formed.

A thin film transistor 412 as a driving element is located in each of the pixel regions Rp, Gp, Bp and Wp.

For example, the thin film transistor 412 may include a semiconductor layer, a gate electrode positioned above the semiconductor layer, and a source electrode and a drain electrode spaced from each other above the gate electrode and connected to the semiconductor layer .

Further, a switching element electrically connected to the thin film transistor 412, the gate wiring, and the data wiring is connected to each pixel region Rp, Gp, Bp, and Wp, and a storage capacitor connected to the switching element and the power wiring May be formed on the first substrate 410.

When a switching element is turned on in response to a gate signal applied to a gate wiring, a data signal applied to the data wiring is applied to the gate electrode of the thin film transistor 412 as a driving element through the switching element, Electrode.

The thin film transistor 412 as a driving element is turned on in accordance with a data signal applied to the gate electrode so that a current proportional to the data signal flows from the power wiring through the thin film transistor 412 as a driving element to the organic light emitting diode 440 And the organic light emitting diode 440 emits light with a luminance proportional to the current flowing through the thin film transistor 412 as a driving element.

At this time, the storage capacitor is charged with a voltage proportional to the data signal so that the voltage of the gate electrode of the thin film transistor 412, which is a driving element, remains constant during one frame.

An insulating layer 414 is formed on the thin film transistor 412. The insulating layer 414 may be formed of an inorganic insulating material such as silicon oxide, silicon nitride, or an organic insulating material such as photoacryl.

The insulating layer 414 may expose the drain electrode of the thin film transistor 412.

The organic light emitting diode 440 is disposed on the insulating layer 414 and includes a first electrode 442, a second electrode 446, an organic layer 442 disposed between the first and second electrodes 442 and 446, And a light emitting layer 444.

The first electrode 442 is disposed on the insulating layer 414 and is formed separately for each pixel region Rp, Gp, Bp, and Wp. The first electrode 442 is connected to the thin film transistor 412.

The first electrode 442 may be an anode and may be formed of a conductive material having a relatively large work function value. For example, the first electrode 442 may be made of a transparent conductive material such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) .

A reflective electrode or a reflective layer may be further formed on and / or below the first electrode 442. For example, the reflective electrode or the reflective layer may be formed of an aluminum-palladium-copper (APC) alloy. That is, the first electrode 442 may have a two-layer structure of a transparent conductive electrode, a reflective electrode, or a reflective layer, or may have a triple-layer structure in which a reflective electrode or a reflective layer is positioned above and below the transparent conductive electrode.

The organic light emitting layer 444 is disposed on the first electrode 442 and emits white light.

For example, as shown in FIG. 3, the organic light emitting layer 444 may include a first light emitting unit 170, a charge generating layer 190, and a second light emitting unit 180.

The organic light emitting layer 444 is formed integrally with the entire display region including the red, green, blue and white pixel regions Rp, Gp, Bp and Wp. Alternatively, the organic light emitting layer 444 may be formed separately for the red, green, blue, and white pixel regions Rp, Gp, Bp, and Wp.

The second electrode 446 is located on the organic light emitting layer 444 and is formed integrally with the entire display region including the red, green, blue and white pixel regions Rp, Gp, Bp and Wp.

The second electrode 446 may be formed of a conductive material having a relatively low work function value and may be used as a cathode. For example, the second electrode 446 may be formed of any one of aluminum (Al), magnesium (Mg), and aluminum-magnesium alloy (AlMg).

The second electrode 446 has a thin thickness and may have a semi-transmissive property.

A bank layer 448 covering the edge of the first electrode 442 is formed under the organic light emitting layer 444. The bank layer 448 may be omitted.

As described above, a barrier layer (not shown) is formed on the organic light emitting diode 440 in order to prevent the organic light emitting diode 440 from being damaged by moisture.

The color filter layer 420 may be disposed on the second substrate 460 or on the second substrate 460 and may include red color filters corresponding to the red, green, and blue pixel regions Rp, Gp, and Bp, Pattern 422, a green color filter pattern 421, and a blue color filter pattern 426.

The red color filter pattern 422 includes a red color filter material pattern 422a and a first color conversion pattern 422b. The red color filter material pattern 422a is located between the second substrate 460 and the first color conversion pattern 422b. That is, the first color conversion pattern 422b is located between the red color filter material pattern 422a and the organic light emitting diode 440. [

The red color filter material pattern 422a includes a red pigment or a red dye. When white light is incident, the red color filter material pattern 422a absorbs light in the green wavelength range from the blue wavelength, and transmits the red wavelength light.

The green color filter pattern 421 includes a green color filter material pattern 421a and a second color conversion pattern 421b. The green color filter material pattern 421a is located between the second substrate 460 and the second color conversion pattern 421b. That is, the second color conversion pattern 421b is located between the green color filter material pattern 421a and the organic light emitting diode 440.

The green color filter material pattern 421a includes a green pigment or a green dye. When the white light is incident, the green color filter material pattern 421a absorbs light in the red wavelength region and blue light in the blue wavelength region and transmits the green wavelength light .

The blue color filter pattern 426 includes a blue pigment or a blue dye. When the white light is incident, the blue color filter pattern 426 absorbs the light of the red wavelength range from the green wavelength and transmits the blue wavelength light.

The antireflection layer 330 is located on the second substrate 360 or on the second substrate 360. That is, the anti-reflection layer 330 is located between the second substrate 360 and the organic light emitting diode 340 in the white pixel region Wp.

The anti-reflection layer 430 includes a third color conversion pattern 432 and a blue color filter material pattern 434. [ The third color conversion pattern 432 is located between the second substrate 460 and the blue color filter material pattern 434. That is, the blue color filter material pattern 434 is located between the third color conversion pattern 432 and the organic light emitting diode 440.

The anti-reflection layer 430 may have substantially the same thickness as the red, green, and blue color filter patterns 422, 421, and 426.

The blue color filter material pattern 434 includes a blue pigment or a blue dye. When the white light is incident, the blue color filter material pattern 434 absorbs the light of the red wavelength range from the green wavelength and transmits the blue wavelength light.

The first to third color conversion patterns 422a, 421a, and 432 absorb light in a short wavelength region and emit light in a long wavelength region. That is, when the white light is incident on the first to third color conversion patterns 422a, 421a and 432, the first to third color conversion patterns 422a, 421a and 432 absorb a part of the blue wavelength region light Thereby emitting green and red light. Accordingly, when the blue wavelength region light of the first luminance and the green and red wavelength region light of the second and third luminance larger than the first luminance are transmitted through the first to third color conversion patterns 422a, 421a, and 432 And are emitted from the first to third color conversion patterns 422a, 421a, and 432, respectively.

The first to third color conversion patterns 422a, 421a, and 432 include a color conversion material (CCM). For example, the color conversion material may be a perylene-based fluorescent dye, a coumarin-based fluorescent dye, a xanthone-based fluorescent dye, or a quantum dot.

The color conversion material may be selected from materials of the following formulas.

[Chemical Formula]

The second substrate 460 having the color filter layer 420 and the antireflection layer 430 is attached to the first substrate 410 by the adhesive layer 450.

When a voltage is applied to the organic light emitting diode 440, white light is emitted from the organic light emitting diode 440 and the emitted light is transmitted through the color filter layer 420 and the anti-reflection layer 430 to the second substrate 460). That is, the organic light emitting diode display device 400 according to the fourth embodiment of the present invention is an upper light emitting method.

In the organic light emitting diode display 400 according to the fourth embodiment of the present invention, an antireflection layer 430 including a third color conversion pattern 432 and a blue color filter material pattern 434 in the white pixel region Wp The external light reflection in the white pixel region Wp can be reduced and a full color image can be realized.

5A, external light sequentially passes through the color conversion pattern 432 and the blue color filter material pattern 434, and the light amount is reduced, thereby reducing external light reflection.

6A, the light emitted from the organic light emitting diode 440 may pass through the blue color filter material pattern 434 and the third color conversion pattern 432 in order to realize white light.

The red color filter pattern 422 includes the red color filter material pattern 422a and the first color conversion pattern 422b and the green color filter pattern 421 includes the green color filter material pattern 421a and the second color conversion pattern 422b. The luminance in the red and green pixel regions Rp and Gp is further increased because the color conversion pattern 421b is included.

That is, since the white light emitted from the organic light emitting diode 440 passes through the first and second color conversion patterns 422b and 421b and increases the amounts of red and green light, the red and green color filter material patterns 422a And 421a also increase in amount of red and green light.

Accordingly, the luminance of the organic light emitting diode display device 400 is further increased.

The present invention can provide an organic light emitting diode display device (300) having a minimum brightness of external light reflection and a high luminance without a polarizing plate for preventing reflection of external light. In addition, since the external light reflection can be reduced without the polarizer, a thin organic light emitting diode display device 300 can be provided.

The organic light emitting diode display devices 100, 200, 300 and 400 include red, green, blue and white pixel regions Rp, Gp, Bp and Wp.

That is, the organic light emitting diode display of the present invention includes only the white pixel region in which the anti-reflection layer including the blue color filter material pattern and the color conversion pattern is formed, or the red, green, blue and white pixel regions Rp, Gp , Bp, and Wp).

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as defined in the appended claims. And changes may be made without departing from the spirit and scope of the invention.

100, 200, 300, 400: organic light emitting diode display device
110, 210, 310, 410: first substrate 130, 260, 360, 460:
120, 240, 340, 440: organic light emitting diode
212, 312, 412: thin film transistors 140, 220, 320, 420:
142, 222, 322, 422: Red color filter pattern
144, 224, 324, 421: green color filter pattern
146, 226, 326, 426: blue color filter pattern
230, 330, 430: antireflection layer
232, 332, 432, 422a, 421a: color conversion pattern
232, 332, 432: blue color filter material pattern
422b: Red color filter material pattern 421b: Green color filter material pattern

Claims (10)

A first substrate including a white pixel region;
A second substrate facing the first substrate;
An organic light emitting diode (OLED) disposed between the first and second substrates and emitting white light;
And an anti-reflection layer which is disposed between the first substrate and the organic light emitting diode and corresponds to the white pixel region and includes a blue color filter material pattern and a first color conversion pattern,
Wherein the blue color filter material pattern is located between the first color conversion pattern and the organic light emitting diode.
The method according to claim 1,
Wherein the first substrate further comprises a red pixel region,
A red color filter pattern located between the first substrate and the organic light emitting diode and including a red color filter material pattern and a second color conversion pattern is disposed in the red pixel region,
And the second color conversion pattern is located between the red color filter pattern and the organic light emitting diode.
3. The method of claim 2,
Wherein the first substrate further comprises a green pixel region,
A green color filter pattern located between the first substrate and the organic light emitting diode and including a green color filter material pattern and a third color conversion pattern is disposed in the green pixel region,
And the third color conversion pattern is located between the green color filter pattern and the organic light emitting diode.
The method according to claim 1,
Wherein the first substrate further comprises a blue pixel region,
And a single-layer blue color filter pattern is disposed in the blue pixel region.
5. The method of claim 4,
Wherein the anti-reflection layer and the blue color filter pattern have the same thickness.
The method according to claim 1,
Further comprising a thin film transistor located on the first substrate,
The organic light emitting diode includes a first electrode connected to the thin film transistor, a second electrode facing the first electrode and positioned between the first electrode and the second substrate, and a second electrode disposed between the first electrode and the second electrode. An organic light emitting layer,
And the anti-reflection layer is positioned between the first electrode and the first substrate.
The method according to claim 1,
Further comprising a thin film transistor located on the first substrate,
The organic light emitting diode includes a first electrode connected to the thin film transistor, a second electrode facing the first electrode and positioned between the first electrode and the second substrate, and a second electrode disposed between the first electrode and the second electrode. An organic light emitting layer,
And the anti-reflection layer is positioned between the second electrode and the second substrate.
The method according to claim 1,
Wherein the first color conversion pattern includes a color conversion material that absorbs light in a short wavelength region and emits light in a long wavelength region.
9. The method of claim 8,
Wherein the color conversion material is a fluorescent dye or a quantum dot.
The method according to claim 1,
The organic light emitting diode includes first and second electrodes facing each other, and a charge generation layer located between the first and second light emitting units and between the first and second light emitting units, And an organic light emitting diode (OLED) display device.

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