KR20170058014A - The loadlock-chamber having dual dispensing module - Google Patents

The loadlock-chamber having dual dispensing module Download PDF

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Publication number
KR20170058014A
KR20170058014A KR1020150161674A KR20150161674A KR20170058014A KR 20170058014 A KR20170058014 A KR 20170058014A KR 1020150161674 A KR1020150161674 A KR 1020150161674A KR 20150161674 A KR20150161674 A KR 20150161674A KR 20170058014 A KR20170058014 A KR 20170058014A
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KR
South Korea
Prior art keywords
load lock
lock chamber
venting gas
venting
central
Prior art date
Application number
KR1020150161674A
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Korean (ko)
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KR101790562B1 (en
Inventor
박호현
이성만
김웅열
Original Assignee
주식회사 더셀머트리얼즈
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Priority to KR1020150161674A priority Critical patent/KR101790562B1/en
Publication of KR20170058014A publication Critical patent/KR20170058014A/en
Application granted granted Critical
Publication of KR101790562B1 publication Critical patent/KR101790562B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Abstract

The present invention relates to a load lock chamber having a structure in which two substrates are simultaneously charged, a load lock chamber having a dual diffusion module for injecting venting gas on both sides with respect to one substrate, A load lock chamber on both sides of which the substrate is loaded; A side diffusion module installed on both side walls of the load lock chamber and supplying venting gas toward the substrate at side walls of the load lock chamber; And a central diffusion module installed at the center of the load lock chamber and supplying the venting gas toward the substrate at the center of the load lock chamber.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a load lock chamber having a dual diffusion module,

The present invention relates to a load lock chamber, and more particularly, to a load lock chamber having a structure in which two substrates are simultaneously charged, comprising a load lock chamber having a dual diffusion module for injecting venting gas on both sides with respect to one substrate, .

Vacuum processing equipment is often used in the manufacture of precision devices such as semiconductors and displays. Since the vacuum processing apparatus is processed in a vacuum chamber in which a vacuum environment is formed, it is a method of improving the process efficiency by continuously performing the process while maintaining such a vacuum environment.

Accordingly, in the vacuum processing apparatus 1, as shown in FIG. 1, a process chamber 10 in which a load lock chamber 20 for carrying in and carrying out a substrate is separately provided, Proceed with the process. That is, the load lock chamber 20 completes the loading of the new substrate and the unloading of the processed substrate during the process in the process chamber 10.

Therefore, in the load lock chamber 20, a pumping operation for lowering the pressure inside the chamber and a venting operation for increasing the pressure again are repeated. To this end, the load lock chamber 20 is provided with a gas supply device 30 for venting and a vacuum pumping line (not shown) for pumping, as shown in Fig. At this time, in the case of discharging the processed substrate S to the outside in the load lock chamber 20, when the process proceeds at a high temperature, the substrate is discharged in a state of being cooled to about room temperature. Accordingly, the venting gas is supplied to the substrate S through the venting gas injecting section 32, and the venting gas is cooled while supplying the venting gas to one side surface as shown in FIG.

However, when the venting gas is supplied only from one side of the substrate S, there may arise a problem that the substrate is placed in a non-uniform temperature state and broken, and the venting and cooling time are long.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a load lock chamber having a dual diffusion module for injecting venting gas on both sides of a substrate in a load lock chamber having a structure in which two substrates are simultaneously charged.

According to an aspect of the present invention, there is provided a load lock chamber comprising: a load lock chamber in which a substrate is loaded on both sides of a load lock chamber; A side diffusion module installed on both side walls of the load lock chamber and supplying venting gas toward the substrate at side walls of the load lock chamber; And a central diffusion module installed at the center of the load lock chamber and supplying the venting gas toward the substrate at the center of the load lock chamber.

The lateral diffusion module may further include a side vent hole formed through one side wall of the load lock chamber; A valve block fixed to a side wall of a load lock chamber in which the lateral vent hole is formed, the valve block supplying the venting gas into the side vent hole; A venting gas supply line connected to the valve block for supplying the venting gas to the valve block; And a venting valve installed in the valve block for controlling the flow of the venting gas supplied by the venting gas supply line toward the side vent hole.

In the present invention, the central diffusion module may include: a central vent hole formed at the center of the load lock chamber; A central valve block installed adjacent to the central vent hole and supplying the venting gas into the central vent hole; A central venting gas supply line connected to the central valve block for supplying the venting gas to the central valve block; And a venting valve installed in the central valve block for controlling the flow of the venting gas supplied by the venting gas supply line toward the center vent hole.

In the present invention, it is preferable that the central valve block is symmetrically formed so as to supply the venting gas in the left-right direction of the load lock chamber.

Further, in the present invention, it is preferable that the lateral diffusion module and the central diffusion module are installed in directions opposite to each other.

The load lock chamber of the present invention has a structure in which two substrates are simultaneously charged and a dual diffusion module for spraying the venting gas on both sides of the substrate to rapidly cool the substrate while uniformly cooling the substrate, There is an advantage not to occur.

1 is a view showing the structure of a conventional vacuum processing apparatus.
2 is a view showing a conventional venting gas injection system.
3 and 4 are views showing the structure of a vacuum processing apparatus according to an embodiment of the present invention.
5 is a perspective view illustrating a structure of a lateral diffusion module according to an embodiment of the present invention.
6 and 7 are sectional views showing the structure of a lateral diffusion module according to an embodiment of the present invention.
8 is a diagram illustrating a structure of a central spreading module according to an embodiment of the present invention.
9 is a view showing the venting gas injection system of the present invention.

Hereinafter, a specific embodiment of the present invention will be described in detail with reference to the accompanying drawings.

The load lock chamber 100 according to the present embodiment may include a load lock chamber 100, a lateral diffusion module 200, and a central diffusion module 300, as shown in FIG.

As shown in FIG. 3, the load lock chamber 100 has a structure in which a substrate S is loaded on both sides of the load lock chamber 100. In some cases, one load lock chamber 100 is vertically So that the four substrates can be simultaneously loaded or unloaded.

Next, the lateral diffusion module 200 is installed on both side walls of the load lock chamber 100, as shown in FIG. 3, and supplies the ventilation gas toward the substrate at the side walls of the load lock chamber 100 Lt; / RTI > That is, as shown in FIG. 4, the lateral diffusion module 200 is installed on both side walls of the load lock chamber 100, which are capable of loading two substrates, facing each other, And the venting gas is injected in the center direction.

5, the lateral diffusion ventilation hole 210, the valve block 220, the venting gas supply line 230, and the venting valve 240 (see FIG. 5) ).

6, the lateral vent hole 210 is a hole formed through a side wall of the load lock chamber 100. The lateral vent hole 210 is formed in the side wall of the load lock chamber 100, A venting gas, such as nitrogen, is supplied to the chamber for venting. Accordingly, an injection part 250 for injecting the venting gas supplied into the chamber is provided at the end inside the chamber of the vent hole 210.

6, the valve block 220 is fixed to the side wall of the load lock chamber 100 in which the vent hole 210 is formed. The valve block 220 is installed inside the vent hole 210, . That is, the valve block 220 is directly coupled to the side surface of the load lock chamber 100 without any piping connection, and provides a space for installing a venting valve 240 to be described later, Thereby providing a structure capable of interrupting the flow of the venting gas at the shortest distance.

At this time, one or more of the valve blocks 220 may be installed on the side wall of the load lock chamber 100, which may be varied as needed.

6 and 7, the gas inlet passage 222, the gas outlet passage 224, and the valve passage 226 are formed in the valve block 220 in this embodiment. First, the gas inlet passage 222 is formed through the inside of the valve block 220 and communicates with the venting gas supply line 230. Therefore, the venting gas flows into the valve block 220 through the gas inlet passage 222 and can be moved to the valve passage 226, which will be described later.

6, one end of the gas outflow channel 224 is communicated with the vent hole 210, and the other end of the gas outflow channel 224 is communicated with a valve channel 226 described later. Therefore, the venting gas introduced into the gas outflow passage 224 through the valve passage 226 is supplied into the load lock chamber 100 through the vent hole 210.

The valve passage 226 is a component that connects the gas outlet passage 224 and the gas inlet passage 222 and communicates with the venting valve 240 as shown in FIG. Therefore, the venting valve 240 may flow the venting gas to the valve passage 226 or may stop the venting gas.

Next, the venting gas supply line 230 is connected to the valve block 220 to supply the venting gas to the valve block 220, as shown in FIG. That is, the venting gas supply line 230 is a component for supplying the venting gas continuously supplied from the separately provided venting gas supply unit (not shown) to the valve block 220. The venting gas thus supplied is interrupted by the venting valve 240. In this embodiment, the venting gas supply line 230 may be changed into various structures.

5, the venting valve 240 is installed in the valve block 220 and extends in the direction of the vent hole 210 of the venting gas supplied by the venting gas supply line 230 Is a component that interrupts the flow of. That is, the venting valve 240 interrupts the flow of the venting gas continuously flowing into the valve block 220 toward the load lock chamber 100.

5 and 7, the venting valve 240 may include a slow venting valve 242 and a fast venting valve 244, as shown in FIGS. And the like. The slow venting valve 242 and the fast venting valve 244 are installed side by side, respectively, and perform functions when the venting process is performed slowly and when the venting process is performed rapidly.

When the slow venting valve 242 and the fast venting valve 244 are provided in the valve block 220 as described above, the valve passage 226 is connected to the slow venting valve 242, And the fast venting valve 244 are connected in parallel to each other. The slow venting valve 242 and the fast venting valve 244 can be easily converted and used by the parallel connection structure.

5, the venting valve 240 may be installed on the upper and lower portions of the valve block 220, respectively, when the chambers are separated from the upper and lower portions of the load lock chamber 100. Accordingly, the valve block 220 according to the present embodiment has an advantage that it can cope with load lock chambers having various structures without changing the structure.

3 and 4, the central diffusion module 300 is installed at the center of the load lock chamber 100, and a ventilation gas is introduced from the center of the load lock chamber 100 toward the substrate Supply components. That is, the central diffusion module 300 is installed in a narrow space in the center of the load lock chamber 100 having a structure capable of simultaneously loading two substrates. As shown in FIG. 3, And the venting gas is injected from the center toward the substrate, respectively.

The central diffusion module 300 may include a central vent hole 310, a central valve block 320, a central venting gas supply line 330, and a venting valve 340. Since the central vent hole 310, the central valve block 320, the central venting gas supply line 330 and the venting valve 340 have substantially the same structure and function as those of the side diffusion module 200, Repetitive description thereof will be omitted.

However, in the present embodiment, the central valve block 330 may have a symmetrical shape as shown in FIG. 8 to supply the venting gas in the left-right direction of the load lock chamber 100. When the center valve block 330 is integrally formed so as to supply the venting gas to the left and right sides, the area occupied by the central diffusion module 300 can be minimized.

In addition, in the load lock chamber 100 according to the present embodiment, the lateral diffusion module 200 and the central diffusion module 300 are installed in directions facing each other as shown in FIG. 3, It is preferable to spray the venting gas on both sides of the substrate at the same time to enable uniform and rapid cooling and venting of the substrate.

1: Conventional vacuum processing apparatus
100: a load lock chamber according to an embodiment of the present invention
200: load lock chamber 200: side diffusion module
300: central spreading module

Claims (5)

A load lock chamber on both sides of which the substrate is loaded;
A side diffusion module installed on both side walls of the load lock chamber and supplying venting gas toward the substrate at side walls of the load lock chamber;
And a central diffusion module installed at the center of the load lock chamber and supplying venting gas in a direction of the substrate from the center of the load lock chamber. 2. The apparatus of claim 1, wherein the lateral diffusion module comprises:
A side vent hole formed through one side wall of the load lock chamber;
A valve block fixed to a side wall of a load lock chamber in which the lateral vent hole is formed, the valve block supplying the venting gas into the side vent hole;
A venting gas supply line connected to the valve block for supplying the venting gas to the valve block;
And a venting valve installed in the valve block for controlling the flow of the venting gas supplied by the venting gas supply line toward the side vent hole. 2. The apparatus of claim 1,
A central vent hole formed at the center of the load lock chamber;
A central valve block installed adjacent to the central vent hole and supplying the venting gas into the central vent hole;
A central venting gas supply line connected to the central valve block for supplying the venting gas to the central valve block;
And a venting valve installed in the central valve block for controlling the flow of the venting gas supplied by the central venting gas supply line toward the center vent hole. 4. The apparatus of claim 3, wherein the central valve block comprises:
And the ventilation gas is supplied in a left-right symmetrical shape to supply the venting gas in the left-right direction of the load lock chamber. The method according to claim 1,
Wherein the lateral diffusion module and the central diffusion module are installed in directions opposite to each other.
KR1020150161674A 2015-11-18 2015-11-18 The loadlock-chamber having dual dispensing module KR101790562B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
KR1020150161674A KR101790562B1 (en) 2015-11-18 2015-11-18 The loadlock-chamber having dual dispensing module

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KR20170058014A true KR20170058014A (en) 2017-05-26
KR101790562B1 KR101790562B1 (en) 2017-11-20

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230065617A (en) * 2021-11-05 2023-05-12 프리시스 주식회사 Loadlock module and substrate processing system having the same
KR20230065616A (en) * 2021-11-05 2023-05-12 프리시스 주식회사 Loadlock module and substrate processing system having the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000126581A (en) * 1998-10-29 2000-05-09 Kokusai Electric Co Ltd Load lock apparatus
JP2012119626A (en) * 2010-12-03 2012-06-21 Tokyo Electron Ltd Load lock device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230065617A (en) * 2021-11-05 2023-05-12 프리시스 주식회사 Loadlock module and substrate processing system having the same
KR20230065616A (en) * 2021-11-05 2023-05-12 프리시스 주식회사 Loadlock module and substrate processing system having the same

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