KR20170057114A - Hybrid diode device - Google Patents

Abstract

An embodiment of the present invention provides a hybrid diode device. The hybrid diode device includes: a first lower nitride film which is arranged on a substrate and includes a first electron gas layer also called two-dimensional electron gas (2DEG); a second lower nitride film including a second electron gas layer while being extended to the outer edge of the substrate from the first lower nitride film; a first upper nitride film arranged on the first lower nitride film; a second upper nitride film arranged on the second lower nitride film; a first cap layer arranged on the first upper nitride film; a second cap layer arranged on the second upper nitride film; a first electrode structure connected to the first lower nitride film and the first cap layer; and a second electrode structure which is connected to the second lower nitride film and to the first electrode structure. The second lower nitride film generates electricity by dynamic movement.

Description

[0001] Hybrid diode device [0002]

The present invention relates to a hybrid diode device, and more particularly, to a hybrid diode device in which a piezoelectric device and a diode device are integrated on a single substrate.

Generally, electronic devices require a battery or a fixed power source as an operating power source. Particularly, in the case of a battery, it is required to periodically charge or replace the battery according to its life. [0002] Recently, as electronic devices have been developed into a form of wirelessization and low power, energy harvesting micro power generators that harvest electrical energy from the surrounding environment are being studied.

Further, in order to supply the electric energy generated by converting the envi- ronmental energy as described above to the electronic equipment requiring real power, there is a problem that a rectifying element for converting the generated electric energy of the arbitrary waveform into a direct current type, Additional is required.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a hybrid diode device in which a piezoelectric element and a diode element are integrated on a single substrate. Accordingly, it is possible to provide a self-power providing hybrid diode device capable of supplying magnetic power.

SUMMARY OF THE INVENTION The present invention provides a hybrid diode device including a piezoelectric element and a diode element sharing a Gallium Nitride-based nitride film, which is a piezoelectric material.

A technical object of the present invention is to provide a diode device capable of converting electric energy of an alternating current type provided by a piezoelectric device into electric energy of a direct current type.

A hybrid diode device according to an embodiment of the present invention is provided. A hybrid diode element is disposed on a substrate and includes a first lower nitride layer including a first electron gas layer (2DEG), a second lower nitride layer extending from the first lower nitride layer to an outer periphery of the substrate, A first upper nitride film disposed on the first lower nitride film, a second upper nitride film disposed on the second lower nitride film, a first cap disposed on the first upper nitride film, A second cap layer disposed on the second top nitride layer, a first electrode structure connected to the first bottom nitride layer and the first cap layer, and a second cap layer connected to the second bottom nitride layer, And a second electrode structure, and the second lower nitride film generates electricity by dynamic movement.

According to an example, the first electron gas layer and the second electron gas layer are spaced apart from each other and electrically insulated.

According to an example, the first and second lower nitride films may be gallium nitride (GaN) as a Gallium Nitride-based material.

According to an embodiment, the second top nitride film is a nitride film pattern that exposes a part of the second bottom nitride film, and the second electron gas layer is provided in a region in contact with the second bottom nitride film and the nitride film patterns.

According to one example, the second electron gas layer is discontinuously provided in the first direction at the interface between the second lower nitride film and the second upper nitride film, and the first direction is formed in the second lower nitride film, Direction perpendicular to the direction of the nitride film.

According to an example, the second electrode structure penetrates each of the nitride film patterns and contacts the second electron gas layer.

According to an example, the first electrode structure may include a first electrode electrically connected to the first electron gas layer in the first lower nitride layer and a second electrode connected to the first cap layer, Includes a third electrode and a fourth electrode electrically connected to the second electron gas layer in the second lower nitride layer.

In one example, the first electrode, the third electrode, and the fourth electrode are ohmic electrodes, the second electrode is a Schottky electrode, the third electrode is a Schottky electrode, And the connection pad, and the first electrode and the fourth electrode are connected to an external circuit.

According to an example, the first electrode is an ohmic electrode provided in a plurality, and the second electrode is a Schottky electrode provided in a plurality of, and the first electrodes and the second electrodes are connected to a bridge circuit .

In one embodiment, the first electrodes include a first ohmic electrode, a second ohmic electrode, a third ohmic electrode, and a fourth ohmic electrode, wherein the second electrodes include a first Schottky electrode, a second Schottky electrode, A third Schottky electrode, and a fourth Schottky electrode, wherein a pair of the first ohmic electrode and the first Schottky electrode, a pair of the second ohmic electrode and the second Schottky electrode, The third ohmic electrode and the third Schottky electrode, and the pair of the fourth ohmic electrode and the fourth Schottky electrode constitute first to fourth diodes, respectively.

By way of example, isolation regions are provided between the first to fourth diodes, respectively, to separate them.

According to an example, the first diode and the fourth diode are connected by the third electrode and the first connection pad, and the second diode and the third diode are connected by the fourth electrode and the second connection pad And the first diode, the second diode, the third diode, and the fourth diode are connected to an external circuit by a third connection pad and a fourth connection pad, respectively.

A hybrid diode device according to an embodiment of the present invention is provided. The hybrid diode device includes a substrate having a body portion and a cantilever beam, a lower nitride film having an electron gas layer disposed on the substrate, a top nitride film disposed on the lower nitride film, and a first electron gas layer and a second electron gas layer A first electrode structure for separating the top nitride film into a first top nitride film and a second top nitride film, a first electrode structure connected to the first electron gas layer and the first top nitride film, Wherein the second electron gas layer and the second upper nitride film are disposed on the cantilever, and the second electrode structure is formed on the lower electrode, wherein the second electrode structure includes an electrical energy generated by a change in strain applied to the lower nitride film To the first electrode structure.

According to one example, the first isolation region is recessed from the top nitride film toward the bottom nitride film.

According to an exemplary embodiment, the apparatus further comprises a connection pad disposed on the first isolation region, and the connection pad connects the first electrode structure and the second electrode structure.

The first electrode structure may further include a second isolation region which is recessed in the first electron gas layer in the first top nitride film to divide the first electron gas layer and the first top nitride film into four regions, Includes a pair of ohmic electrodes and a Schottky electrode connected to each of the separated first electron gas layers and the first top nitride films.

According to an example, four ohmic electrodes and one Schottky electrode constituting one diode are provided, and the ohmic electrodes and the Schottky electrodes constitute a bridge circuit.

According to one example, the capping layer is separated by the first isolation region and the second isolation region.

According to one example, the cap layer further includes a protective layer disposed on the cap layer.

According to an embodiment, the substrate further includes an outer isolation region recessed in the direction from the upper nitride film toward the lower nitride film at the edge of the lower nitride film and the upper nitride film disposed on the substrate.

According to an aspect of the present invention, there is further provided a mass body provided at an edge of the cantilever facing the substrate, and an open space through which the cantilever moves can be provided at a lower portion of the cantilever.

According to the embodiments of the present invention, it is possible to provide a hybrid diode device in which a piezoelectric element and a diode element are integrated on a single substrate. As a result, the alternating-current electric energy supplied by the piezoelectric element by the magnetic force can be rectified and converted by the diode element.

According to the embodiment of the present invention, the hybrid diode device can supply power at a self-level, thereby reducing the electrical connection step between the power source and the diode device. Since the piezoelectric element capable of supplying the magnetic power and the diode element as the rectifying conversion element are integrated on one substrate, it is possible to miniaturize the hybrid diode element and reduce the manufacturing cost thereof.

1 is a plan view showing a hybrid diode device according to an embodiment of the present invention.
2 is a cross-sectional view taken along the line A-A 'in FIG.
3 is a circuit diagram showing a hybrid diode device according to an embodiment of the present invention.
4 is a plan view showing a hybrid diode device according to an embodiment of the present invention.
5 is a cross-sectional view taken along the line B-B 'in FIG.
6 is a cross-sectional view taken along the line C-C 'in FIG.
7 is a circuit diagram showing a hybrid diode device according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to accomplish them, will become apparent by reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

In addition, the embodiments described herein will be described with reference to cross-sectional views and / or plan views, which are ideal illustrations of the present invention. In the drawings, the thicknesses of the films and regions are exaggerated for an effective description of the technical content. Thus, the shape of the illustrations may be modified by manufacturing techniques and / or tolerances. Therefore, the embodiments of the present invention are not limited to the specific forms shown, but also include changes in the forms that are generated according to the manufacturing process. For example, the etched area shown at right angles may be rounded or may have a shape with a certain curvature. Thus, the regions illustrated in the figures have schematic attributes, and the shapes of the regions illustrated in the figures are intended to illustrate specific types of regions of the elements and are not intended to limit the scope of the invention.

FIG. 1 is a plan view showing a hybrid diode device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line A-A 'in FIG.

Referring to FIGS. 1 and 2, the hybrid diode device 1 may include a diode device 100 and a piezoelectric device 200. The diode element 100 and the piezoelectric element 200 can be electrically connected. The piezoelectric element 200 can generate electrical energy by physical changes such as vibration and pressure. For example, the piezoelectric element 200 can vibrate at a frequency of several Hz to several tens of kHz. The diode element 100 can rectify and convert the alternating current electrical energy generated by the piezoelectric element 200 into a DC current. For example, the diode element 100 can perform a half-wave rectification operation in which the reverse current is cut off and only the forward current flows among the alternating electric energy generated by the piezoelectric element 200. The diode element 100 and the piezoelectric element 200 may be disposed on the substrate 10. For example, the substrate 10 may be any one of sapphire, silicon, gallium nitride (GaN), and silicon carbide (SiC). The substrate 10 may include a main body 11 on which the diode element 100 is disposed and a cantilever 12 on which the piezoelectric element 200 is disposed. The thickness of the cantilever beam 12 may be thinner than the thickness of the main body 11. [ Thus, the cantilever beam 12 having one end fixed to the main body 11 can vibrate. The thickness of the cantilever beam 12 can be determined according to the thickness to be etched. For example, the thickness of the main body portion 11 may be several tens of μm to several mm, and the thickness of the cantilevers 12 may be several μm to several tens of μm. A protective layer 400 for protecting the diode element 100 and the piezoelectric element 200 may be provided. The hybrid diode element 1 may be embedded in a package (not shown) or a can (not shown) to protect it from the external environment.

The diode device 100 may include a first lower nitride layer 110, a first upper nitride layer 120, a first cap layer 130, and a first electrode structure 150. The first lower nitride film 110 may be in contact with the substrate 10. The first lower nitride film 110 may include gallium nitride (GaN). A first electron gas layer (2DEG) 115 may be provided in the first lower nitride layer 110. The first electron gas layer 115 can serve as a channel through which a current flows because of the presence of a high density of electron gas. A buffer layer (20) may be disposed between the substrate (10) and the first lower nitride film (110). The buffer layer 20 may be a part of the substrate 10. The buffer layer 20 can compensate for the difference in lattice constant between the substrate 10 and the first lower nitride film 110.

The first upper nitride film 120 may be disposed on the first lower nitride film 110. The first upper nitride layer 120 may form a heterojunction structure with the first lower nitride layer 110. The first top nitride layer 120 may include aluminum gallium nitride (AlGaN).

The first cap layer 130 may be disposed on the first top nitride layer 120. The first cap layer 130 may comprise gallium nitride (GaN), indium gallium nitride (InGaN), or aluminum nitride (AlN). The first cap layer 130 may be a single layer or a composite layer composed of the various kinds of films. In addition, the first cap layer 130 may reduce the leakage current on the surface of the first top nitride film 120. An electrically insulating layer such as alumina (Al ₂ O ₃ ), silicon oxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), or hafnium oxide (HfO ₂ ) may be formed on the first cap layer 130 Can be further disposed.

A protective layer 400 may be provided on the first cap layer 130. The protective layer 400 can protect the diode element 100.

The first electrode structure 150 may include a first electrode 160 and a second electrode 170. The first electrode 160 may directly contact the first lower nitride layer 110 through the first upper nitride layer 120 and the first cap layer 130. The first electron gas layer 115 can be disposed at the interface between the first upper nitride layer 120 and the first lower nitride layer 110 so that the first electrode 160 can be in direct contact with the first electron gas layer 115 have. The second electrode 170 may be in direct contact with the first cap layer 130 through the passivation layer 400. The first electrode 160 and the second electrode 170 may be spaced apart from each other. The first electrode 160 may be an ohmic electrode that is ohmic-bonded to the first electron gas layer 115 and the second electrode 170 may be a Schottky junction with the first cap layer 130, Electrode. The ohmic electrode may be a cathode, and the Schottky electrode may be an anode. The first electrode 160 and the second electrode 170 may constitute one diode. For example, the anode may be nickel (Ni) or gold (Au), and the cathode may be nickel, gold, aluminum, titanium, or molybdenum ). ≪ / RTI > One end of the first electrode 160 may be connected to an external circuit, and one end of the second electrode 170 may be electrically connected to the piezoelectric element 200.

The first electrode 160 and the second electrode 170 may have a plurality of first extensions 165 and second extensions 175 that are exposed on the passivation layer 400. The first extensions 165 may extend toward the second electrode 170 and the second extensions 175 may extend toward the first electrode 160. The first extensions 165 and the second extensions 175 may be arranged at an intersection in one direction. The first extensions 165 and the second extensions 175 may be spaced apart from each other.

The piezoelectric element 200 may include a second lower nitride layer 210, a second top nitride layer 220, a second cap layer 230, and a second electrode structure 250.

The second lower nitride layer 210 may be connected to the first lower nitride layer 110. The second lower nitride layer 210 may extend from the first lower nitride layer 110 to the outer periphery of the substrate 10. The second lower nitride layer 210 may include gallium nitride (GaN). A second electron gas layer 215 may be provided in the second lower nitride film 210. The second electron gas layer 215 can function as a channel through which a current flows due to the existence of a high density electron gas. The second lower nitride film 210 may function as a piezoelectric material. Vibration of the cantilever beam 12 may cause a physical change in the second lower nitride film 210, such as vibration or pressure. Accordingly, electric energy can be generated by the piezoelectric conversion in the second lower nitride film 210, and the generated electric energy can be transferred to the second electrode structure 250 by the second electron gas layer 215.

A buffer layer 20 may be provided on the lower surface of the second lower nitride film 210. The buffer layer 20 may serve to support the second lower nitride layer 210.

The piezoelectric element 200 may be disposed on the cantilever beam 12 extending from the body portion 11 of the substrate 10 to the outside. For example, the mass body 205 may be disposed on the lower surface of the buffer layer 20. The mass body 205 may be disposed at the end of the cantilever beam 12 facing the main body 11. [ The mass body 205 can easily make the cantilevers 12 vibrate. The mass body 205 may be formed by removing a part of the substrate 10. [ Accordingly, the mass body 205 may be made of the same material as the substrate 10. For example, the mass body 205 can be any one of sapphire, silicon, gallium nitride (GaN), and silicon carbide (SiC).

An open space 240 may be provided below the second lower nitride film 210. The open space 240 can be formed by removing the substrate 10. The open space 240 can provide a space in which the cantilevers (corresponding to the piezoelectric elements 200) vibrate. Therefore, the height of the open space 240 may be larger than the amplitude (±) at which the cantilever beam 12 vibrates. The height of the open space 240 can be determined by the thickness of the substrate 10 to be removed.

The second upper nitride film 220 may be disposed on the second lower nitride film 210. The second upper nitride film 220 may form a heterojunction structure with the second lower nitride film 210. The second top nitride layer 220 may include aluminum gallium nitride (AlGaN). For example, the second upper nitride layer 220 may be a nitride layer pattern that exposes a portion of the second lower nitride layer 210. The second electron gas layer 215 may be provided only in a region where the nitride film patterns and the second lower nitride film 210 are in contact with each other. That is, the second electron gas layer 215 may be discontinuously provided in the first direction at the interface between the second lower nitride film 210 and the nitride film patterns. The first direction may be a direction perpendicular to a direction from the second top nitride film 220 to the second bottom nitride film 210.

The second cap layer 230 may be disposed on the second top nitride films 220. As an example, the second cap layer 230 may be disposed on the nitride film patterns. The second cap layer 230 may comprise gallium nitride (GaN), indium gallium nitride (InGaN), or aluminum nitride (AlN). The second cap layer 230 may be a single layer or a composite layer composed of various kinds of films. The second cap layer 230 may reduce the leakage current on the surface of the second top nitride film 220. An electrically insulating layer such as alumina (Al ₂ O ₃ ), silicon oxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), or hafnium oxide (HfO ₂ ) may be formed on the second cap layer 230 Can be further disposed.

A protective layer 400 may be disposed between the nitride film patterns and the second cap layers 230 and on the second cap layer 230. [ The passivation layer 400 may be provided between the nitride film patterns to electrically isolate the nitride film patterns from each other.

The second electrode structure 250 may include a third electrode 260 and a fourth electrode 270. The third electrode 260 and the fourth electrode 270 may be in contact with the second lower nitride layer 210 through the second upper nitride layer 220. The second electron gas layer 215 may be disposed at the interface between the second upper nitride layer 220 and the second lower nitride layer 210 so that the third electrode 260 and the fourth electrode 270 are in contact with the second electron gas layer 215). The second electron gas layer 215 may be connected to the second electrode structure 250 and serve as an opposite electrode for piezoelectric conversion. Each of the third electrodes 260 and the fourth electrodes 270 may be arranged so as to correspond to each of the plurality of second upper nitride films 220 (nitride film patterns) patterned. That is, one third electrode 260 or fourth electrode 270 can be disposed on any one of the nitride film patterns, and the protective layer 400 disposed between the nitride film patterns can prevent the third electrodes 260, The second electrodes 260 and the fourth electrodes 270 may be electrically insulated.

The third electrode 260 and the fourth electrode 270 may be ohmic electrodes that are ohmic-bonded to the second electron gas layer 215. For example, the third electrode 260 and the fourth electrode 270 may be formed of an alloy including at least one of nickel (Ni), gold (Au), aluminum (Al), titanium (Ti), and molybdenum Lt; / RTI > One end of the third electrode 260 may be electrically connected to the diode element 100 and one end of the fourth electrode 270 may be connected to an external circuit.

The third electrode 260 and the fourth electrode 270 may have third extensions 265 and fourth extensions 275 disposed on the passivation layer 400, respectively. The third extensions 265 may extend toward the fourth electrode 270 and the fourth extensions 275 may extend toward the third electrode 260. The third extensions 265 and the fourth extensions 275 may be arranged at an intersection in one direction. The third extensions 265 and the fourth extensions 275 may be spaced apart from each other.

The isolation region 300 may be disposed between the diode element 100 and the piezoelectric element 200. [ The isolation region 300 may be a region recessed toward the substrate 10 on the first top nitride film 120 or the second top nitride film 220. [ The isolation region 300 may be formed through mesa etching. The isolation region 300 may separate the first top nitride layer 120 and the second top nitride layer 220 and the first and second electron gas layers 115 and 215 from each other. As a result, the diode element 100 and the piezoelectric element 200 can be electrically insulated from each other and spatially isolated.

A protective layer 400 may be disposed on the isolation region 300 and a connection pad 350 may be disposed on the protection layer 400. The connection pad 350 may electrically connect the first electrode structure 150 and the second electrode structure 250. The connection pad 350 may connect the second electrode 170 of the first electrode structure 150 and the third electrode 260 of the second electrode structure 250. [

An outer isolation region 310 may be provided at the edges of the first and second lower nitride films 110 and 210 and the first and second upper nitride films 120 and 220 disposed on the substrate 10. The outer isolation region 310 may be a recessed region in a direction toward the first and second lower nitride films 110 and 210 in the first and second upper nitride films 120 and 220. The outer isolation region 310 includes first and second electron gas layers 115 and 115 disposed near the interface between the first and second lower nitride films 110 and 210 and the first and second upper nitride films 120 and 220, , 215 may be removed. In this way, the hybrid diode element 1 can be electrically isolated from other semiconductor elements.

According to the embodiment of the present invention, strain can be applied to the second lower nitride film 210 of the piezoelectric element 200 by physical changes such as vibration and pressure. Since the second lower nitride film 210 is a piezoelectric material, electrical energy can be generated by its expansion and contraction. The generated electrical energy can be transferred to the second electrode structure 250 by the second electron gas layer 215 and the second electrode structure 250 can be transferred to the diode 250 by the first connection pad 350. [ To the device 100.

According to the embodiment of the present invention, the diode element 100 and the piezoelectric element 200 can be disposed on one substrate 10, and the hybrid diode element 1 is not an electric energy supplied by an external power source , And the electric energy generated in the piezoelectric element 200 can be supplied to the diode element 100. [ Therefore, the hybrid diode device 1 according to the embodiment of the present invention is capable of supplying power at a lower level, thereby reducing the electrical connection step between the power source and the diode device, increasing the energy conversion efficiency, enabling miniaturization, .

3 is a circuit diagram showing a hybrid diode device according to an embodiment of the present invention.

1 to 3, the piezoelectric device 200 may be an input power source for generating electrical energy, and the diode device 100 may be configured to rectify the alternating current electrical energy generated by the piezoelectric device 200 into a rectified current Wave rectification conversion circuit that converts the input signal. The first electrode 160, which is an ohmic electrode, and the second electrode 170, which is a Schottky electrode, can form one Schottky diode D ₀ . One end of the first electrode 160 may be connected to the first point X1 and one end of the fourth electrode 270 may be connected to the second point X2. Between the first point X1 and the second point X2 may be an output terminal. Amount of electric energy generated by the piezoelectric element 200 through the Schottky diode (D ₀₎ can be applied to the output terminal (output). However, the electrical energy of a sound generated by the piezoelectric element 200 can not pass through a Schottky diode (D _0). Therefore, the positive electric energy converted into the direct current by the diode element 100 can be transmitted to the output terminal to supply power to the capacitor C and the load R _L. Since the piezoelectric element 200 serving as an input power source and the diode element 100 serving as a rectifying circuit are integrated on the substrate 10 to constitute the hybrid diode element 1, And the step of electrical connection between the input power source and the rectifying circuit is reduced, thereby improving the energy conversion efficiency.

4 is a cross-sectional view taken along the line B-B 'of FIG. 4, and FIG. 6 is a cross-sectional view taken along the line C-C' of FIG. 4. FIG. 4 is a plan view showing a hybrid diode device according to an embodiment of the present invention, to be. For the sake of simplicity of description, description of the contents overlapping with those of Fig. 1 and Fig. 2 will be omitted. The description of the piezoelectric element 200 is the same as in Figs. 1 and 2 and therefore will not be described.

4 to 6, the hybrid diode device 2 may include a diode device 100 and a piezoelectric device 200. [ The piezoelectric element 200 can generate electric energy by physical changes such as vibration and pressure and the diode element 100 can rectify and convert the alternating electric energy generated by the piezoelectric element 200 into a DC have. For example, the diode element 100 can perform a full-wave rectification operation for converting all of the alternating electric energy generated by the piezoelectric element 200 into direct current. The diode element 100 and the piezoelectric element 200 can be spatially isolated from each other by the first isolation region 300a and can be electrically insulated. The first connection pad 350a and the second connection pad 350b may be disposed on the first isolation region 300a. The first connection pad 350a and the second connection pad 350b can electrically connect the diode element 100 and the piezoelectric element 200. [ Further, through the outer isolation region 310, the hybrid diode element 2 can be electrically isolated from other semiconductor elements. Detailed connection relations will be described later.

The diode element 100 may have a second isolation region 300b separating the first lower nitride layer 110, the first upper nitride layer 120 and the first cap layer 130 into four regions. The second isolation region 300b may be a region recessed from the first cap layer 130 toward the first lower nitride layer 110. [ That is, the second isolation region 300b can separate the first electron gas layer 115 in the first lower nitride layer 110 into four. Accordingly, the separated first electron gas layers 115 can be insulated from each other.

The first electrode structure 150 may be connected to the separated first electron gas layers 115 and the first cap layers 130 to form a bridge circuit. The first electrode structure 150 may include first electrodes 160a, 160b, 160c and 160d as ohmic electrodes and second electrodes 170a, 170b, 170c and 170d as Schottky electrodes. The first electrodes 160a, 160b, 160c and 160d may be connected to the first electron gas layer 115 through the first cap layer 130 and the first upper nitride layer 120, and the second electrodes 170a, 170b, 170c, and 170d may be connected to the first cap layer 130. FIG. The first electrodes 160a, 160b, 160c and 160d may include a first ohmic electrode 160a, a second ohmic electrode 160b, a third ohmic electrode 160c and a fourth ohmic electrode 160d The second Schottky electrode 170a, the second Schottky electrode 170b, the third Schottky electrode 170c, and the fourth Schottky electrode 170d. The first and second Schottky electrodes 170a, 170b, 170c, . ≪ / RTI > A pair of the first ohmic electrode 160a and the first Schottky electrode 170a, a pair of the second ohmic electrode 160b and the second Schottky electrode 170b, a pair of the third ohmic electrode 160c, The third Schottky electrode 170c and the fourth ohmic electrode 160d and the fourth Schottky electrode 170d constitute the first through fourth diodes D1, D2, D3 and D4, respectively .

Each of the first electrodes 160a, 160b, 160c, and 160d and the second electrodes 170a, 170b, 170c, and 170d may have a plurality of extensions spaced from each other on the passivation layer 400. [ The first ohmic electrode 160a may have first extensions 165a and the first Schottky electrode 170a may have second extensions 175a. The first extensions 165a may extend toward the first Schottky electrode 170a and the second extensions 175a may extend toward the first ohmic electrode 160a. The first extensions 165a and the second extensions 175a may be arranged at an intersection in one direction. The second ohmic electrode 160b may have third extensions 165b and the second Schottky electrode 170b may have fourth extensions 175b. The third extensions 165b may extend toward the second Schottky electrode 170b and the fourth extensions 175b may extend toward the second ohmic electrode 160b. The third extensions 165b and the fourth extensions 175b may be arranged at an intersection in one direction. The third ohmic electrode 160c may have fifth extensions 165c and the third Schottky electrode 170c may have sixth extensions 175c. The fifth extensions 165c may extend toward the third Schottky electrode 170c and the sixth extensions 175c may extend toward the third ohmic electrode 160c. The fifth extensions 165c and the sixth extensions 175c may be arranged at an intersection in one direction. The fourth ohmic electrode 160d may have seventh extensions 165d and the fourth Schottky electrode 170d may have eighth extensions 175d. The seventh extensions 165d may extend toward the fourth Schottky electrode 170d and the eighth extensions 175d may extend toward the fourth ohmic electrode 160d. The seventh extending portions 165d and the eighth extending portions 175d may be arranged at an intersection in one direction.

The first connection pad 350a, the second connection pad 350b, the third connection pad 350c and the fourth connection pad 350d are connected to the diode element 100, the piezoelectric element 200, D1, D2, D3, and D4 to each other. The first ohmic electrode 160a and the fourth Schottky electrode 170d may be electrically connected to the third electrode 260 of the piezoelectric element 200 by being connected to the first connection pad 350a. The second ohmic electrode 160b and the third Schottky electrode 170c may be electrically connected to the fourth electrode 270 of the piezoelectric element 200 by being connected to the second connection pad 350b. The first Schottky electrode 170a and the second Schottky electrode 170b may be electrically connected through the third connection pad 350c. The third ohmic electrode 160c and the fourth ohmic electrode 160d may be electrically connected through the fourth connection pad 350d. The third connection pad 350c and the fourth connection pad 350d may be connected to an external circuit.

According to the embodiment of the present invention, strain can be applied to the second lower nitride film 210 of the piezoelectric element 200 by physical changes such as vibration and pressure. Since the second lower nitride film 210 is a piezoelectric material, electrical energy can be generated by its expansion and contraction. The generated electrical energy may be transferred to the second electrode structure 250 by the second electron gas layer 215 and the second electrode structure 250 may be connected to the first connection pad 350a and the second connection pad 350b To the diode device 100. The diode device 100 may be configured to receive the electrical energy from the diode device 100. FIG.

According to the embodiment of the present invention, the diode element 100 and the piezoelectric element 200 constituting the bridge circuit can be disposed on one substrate 10. Accordingly, it is possible to realize the hybrid diode device 2 in which the diode device 100 can convert the alternating current electric energy generated by the piezoelectric device 200 into a direct current.

7 is a circuit diagram showing a hybrid diode device according to an embodiment of the present invention.

4 to 7, the piezoelectric device 200 may be an input power source for generating electrical energy, and the diode device 100 may be configured to rectify the alternating current electrical energy generated by the piezoelectric device 200 into a rectified current And may be a full-wave rectification converting circuit for converting the input signal. The first ohmic electrode 160a and the first Schottky electrode 170a may constitute a first diode D1 and the second ohmic electrode 160b and the second Schottky electrode 170b may constitute a second diode The third ohmic electrode 160c and the third Schottky electrode 170c may constitute the third diode D3 and the fourth ohmic electrode 160d and the fourth Schottky electrode 170c may constitute the third diode D2, And the fourth diode D4 may constitute the fourth diode D4. The fourth connection pad 350d may be connected to the first point X1 and the third connection pad 350c may be connected to the second point X2. Between the first point X1 and the second point X2 may be an output terminal. When a positive electric energy generated in the piezoelectric element 200 is applied to the diode element 200, the second diode D2 and the fourth diode D4 are turned on and output to the output terminal, A positive energy can be applied. When the negative electric energy generated in the piezoelectric element 200 is applied to the diode element 200, the first diode D 1 and the third diode D 3 are turned on and output to the output terminal, A positive energy can be applied. Therefore, when the piezoelectric element 200 generates an alternating current type of electric energy, the diode element 100 can output a positive electric energy. The positive electric energy converted into direct current by the diode element 100 can be transmitted to the output terminal to supply power to the capacitor C and the load R _L.

Unlike the above-described example, the directions of the first to fourth diodes D1, D2, D3 and D4 in the diode element 100 may not be limited. However, the first to fourth diodes D1, D2, D3 and D4 constitute a bridge circuit.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

Claims (20)

A first lower nitride film disposed on the substrate and including a first electron gas (2-Dimensional Electron Gas: 2DEG) layer;
A second lower nitride film extending from the first lower nitride film to an outer periphery of the substrate, the second lower nitride film including a second electron gas layer;
A first upper nitride film disposed on the first lower nitride film;
A second upper nitride film disposed on the second lower nitride film;
A first cap layer disposed on the first top nitride layer;
A second cap layer disposed on the second top nitride film;
A first electrode structure connected to the first lower nitride layer and the first cap layer; And
And a second electrode structure connected to the second lower nitride layer and connected to the first electrode structure,
And the second lower nitride film generates electricity by dynamic movement. The method according to claim 1,
Wherein the first electron gas layer and the second electron gas layer are spaced apart from each other and electrically insulated from each other. The method according to claim 1,
Wherein the first and second lower nitride films are gallium nitride (GaN) as a gallium nitride-based material. The method according to claim 1,
Wherein the first and second upper nitride films are aluminum gallium nitride (AlGaN) as a gallium nitride-based material. The method according to claim 1,
The second upper nitride film is a nitride film pattern that exposes a part of the second lower nitride film,
And the second electron gas layer is provided in a region in contact with the second lower nitride film and the nitride film patterns. 6. The method of claim 5,
The second electron gas layer is provided discontinuously in the first direction at the interface between the second lower nitride film and the second upper nitride film,
Wherein the first direction is a direction perpendicular to a direction from the second top nitride film toward the second bottom nitride film. 6. The method of claim 5,
And the second electrode structure penetrates each of the nitride film patterns and contacts the second electron gas layer. The method according to claim 1,
Wherein the first electrode structure comprises:
A first electrode electrically connected to the first electron gas layer in the first lower nitride layer; And
And a second electrode connected to the first cap layer,
And the second electrode structure includes a third electrode and a fourth electrode electrically connected to the second electron gas layer in the second lower nitride layer. 9. The method of claim 8,
The first electrode, the third electrode, and the fourth electrode are ohmic electrodes,
The second electrode is a Schottky electrode,
The third electrode is connected to the second electrode through a connection pad,
Wherein the first electrode and the fourth electrode are connected to an external circuit. 9. The method of claim 8,
Wherein the first electrode is an ohmic electrode provided in plural,
Wherein the second electrode is a Schottky electrode provided in a plurality of positions,
Wherein the first electrodes and the second electrodes constitute a bridge circuit. 11. The method of claim 10,
The first electrodes include a first ohmic electrode, a second ohmic electrode, a third ohmic electrode, and a fourth ohmic electrode,
The second electrodes include a first Schottky electrode, a second Schottky electrode, a third Schottky electrode, and a fourth Schottky electrode,
A pair of the first ohmic electrode and the first Schottky electrode, a pair of the second ohmic electrode and the second Schottky electrode, a pair of the third ohmic electrode and the third Schottky electrode, And the fourth ohmic electrode of the pair and the fourth Schottky electrode constitute first to fourth diodes, respectively. 12. The method of claim 11,
And an isolation region for separating the first to fourth diodes, respectively, is provided. 12. The method of claim 11,
The first diode and the fourth diode are connected by the third electrode and the first connection pad,
The second diode and the third diode are connected by the fourth electrode and the second connection pad,
Wherein the first diode, the second diode, the third diode, and the fourth diode are connected to an external circuit by a third connection pad and a fourth connection pad, respectively. A substrate having a body portion and a cantilever;
A lower nitride film disposed on the substrate and having an electron gas layer;
A lower nitride film disposed on the lower nitride film;
A first isolation region for separating the electron gas layer into a first electron gas layer and a second electron gas layer, and separating the top nitride film into a first top nitride film and a second top nitride film;
A first electrode structure connected to the first electron gas layer and the first top nitride layer; And
And a second electrode structure connected to the second electron gas layer,
The second electron gas layer and the second upper nitride film are disposed on the cantilever,
Wherein the second electrode structure transfers electric energy generated by a change in strain applied to the lower nitride layer to the first electrode structure. 15. The method of claim 14,
Wherein the first isolation region is recessed from the top nitride film toward the bottom nitride film. 16. The method of claim 15,
And a connection pad disposed on the first isolation region,
And the connection pad connects the first electrode structure and the second electrode structure. 15. The method of claim 14,
Further comprising a second isolation region which is recessed from the first upper nitride film to the first electron gas layer and separates the first electron gas layer and the first upper nitride film into four,
Wherein the first electrode structure includes a pair of ohmic electrodes and a Schottky electrode connected to each of the separated first electron gas layers and the first top nitride films. 18. The method of claim 17,
Four ohmic electrodes and the Schottky electrodes constituting one diode are provided,
Wherein the ohmic electrodes and the Schottky electrodes constitute a bridge circuit. 15. The method of claim 14,
And a cap layer disposed on the upper surface of the upper nitride film,
Wherein the cap layer is separated by the first isolation region. 15. The method of claim 14,
Further comprising a mass provided at an edge of the cantilever facing the substrate,
And an open space through which the cantilevers can move is provided in a lower portion of the cantilever beam.

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