KR20170056959A - Cover portion and cleaning apparatus having the same - Google Patents

Cover portion and cleaning apparatus having the same Download PDF

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Publication number
KR20170056959A
KR20170056959A KR1020150160468A KR20150160468A KR20170056959A KR 20170056959 A KR20170056959 A KR 20170056959A KR 1020150160468 A KR1020150160468 A KR 1020150160468A KR 20150160468 A KR20150160468 A KR 20150160468A KR 20170056959 A KR20170056959 A KR 20170056959A
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KR
South Korea
Prior art keywords
substrate
cover
unit
heating
flow path
Prior art date
Application number
KR1020150160468A
Other languages
Korean (ko)
Inventor
이제윤
Original Assignee
주식회사 케이씨텍
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Application filed by 주식회사 케이씨텍 filed Critical 주식회사 케이씨텍
Priority to KR1020150160468A priority Critical patent/KR20170056959A/en
Publication of KR20170056959A publication Critical patent/KR20170056959A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A cover unit and a cleaning apparatus having the cover unit are disclosed. The cover part and the cleaning device having the cover part are formed in a receiving part protruding from the edge of the receiving part formed with a groove in the inside to receive the substrate, a flange part connected to the receiving part by a curved surface and providing a space on the substrate, A heating section for heating the chemical solution or the substrate, a heating section for heating the chemical solution or the substrate, a recovery flow path formed at one side of the accommodation section and the flange section, And exhausting the exhaust gas to the outside of the chamber.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a cover unit,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a cleaning apparatus, and more particularly, to a cover unit capable of effectively performing chemical liquid heating and cleaning and a cleaning apparatus having the same.

In a semiconductor device manufacturing process, ions are implanted into various films such as an insulating film formed on the surface of a semiconductor substrate using an ion implantation technique to change the surface characteristics thereof. The ion implantation process is generally performed after forming a photoresist film for forming a circuit pattern on a semiconductor substrate. However, when the photoresist film is removed after the ion implantation process, the surface of the photoresist film is hardened by ion implantation at a high dose, and the film is difficult to peel off from the substrate.

Therefore, in order to remove the surface-hardened photoresist film, a method of wet-cleaning the substrate is generally used after treating the photoresist film with a plasma ashing process. However, when plasma ashing treatment is applied to such a photoresist film, the substrate is oxidized by the implanted ions, or the characteristics of the substrate are changed by plasma ashing, thereby damaging the substrate. Further, when the photoresist film is subjected to the plasma ashing treatment, a poking phenomenon occurs in which the heated photoresist film explodes. Due to such a popping phenomenon, impurities adhere to the substrate, which makes it difficult to clean the substrate.

In order to solve these problems, a method has been proposed in which moisture is supplied to the photoresist film while heating the substrate without using a plasma ashing process to generate a crack in the hardened layer of the photoresist film, A step of allowing the photoresist film to be easily peeled off from the substrate by permeating moisture is used. However, in such a method, it is necessary to form a large number of cracks in the cured layer of the photoresist film in order to effectively remove the photoresist film. Therefore, if the heating temperature is raised, it is difficult to completely remove the photoresist film due to the occurrence of the pore phenomenon.

On the other hand, when cleaning and removing a high dose implanted photoresist (PR), a mixed solution of sulfuric acid (H2SO4) and hydrogen peroxide water (H2O2), that is, a high-temperature SPM chemical solution is used. In this case, there is a problem that the SPM chemical solution is heated to approximately 150 to 180 DEG C and supplied to the substrate, thereby generating a large amount of fumes.

Therefore, it is necessary to develop a device capable of keeping the temperature of the chemical liquid constant and preventing fume generation.

An object of the present invention is to provide a cover part capable of effectively performing chemical solution heating and cleaning and a cleaning device having the cover part.

The cover portion according to the embodiments of the present invention will be described. The cover part provides a chemical solution on the substrate placed on the spin chuck, and a cover part for heating the substrate. The cover part has grooves formed therein, a receiving part protruding from the edge of the receiving part, A nozzle portion formed in the accommodating portion for ejecting the chemical liquid on the substrate facing the substrate, a heating portion formed in the accommodating portion and facing the substrate for heating the chemical or the substrate, And an exhaust portion in which a return flow path is formed at one side of the flange portion and exhausts the gas to the outside of the chamber.

According to one aspect, the flange portion can be formed with the concave inner surface.

According to one aspect, the lower end of the flange forms a guide path formed to be bent, and the guide path can be configured to guide the gas to the recovery cup provided in the outer periphery of the spin chuck.

According to one aspect, the flange portion may be configured to guide the gas remaining in the space between the accommodation portion and the substrate to some of the exhaust portion and the remainder to the recovery cup provided outside the spin chuck.

According to one aspect, the lower end of the flange portion can be configured to face the edge side of the substrate.

According to one aspect of the present invention, a return flow path is formed at a portion facing the substrate, and a part of the return flow path may be formed on the inner surface of the cover portion and the rest may be formed to penetrate the upper portion of the cover portion.

According to one aspect, the recovery flow path can be formed at the boundary between the receiving portion and the flange portion.

According to one aspect, the recovery flow path may be formed inclined toward the upper side of the cover portion.

According to one aspect, the airflow formed on the substrate by the operation of the heating unit can be discharged by the recovery flow path formed on the outer side of the edge of the substrate.

According to one aspect, the nozzle unit includes a plurality of jetting units, and the plurality of jetting units may be provided in a straight line at a lower portion of the cover unit.

According to one aspect of the present invention, the heating unit includes a first heating lamp having a circular shape at a lower portion of the cover, and a second heating lamp having a larger diameter than the first heating lamp.

A cleaning apparatus according to embodiments of the present invention will be described. The cleaning apparatus includes a chamber for providing a space in which the substrate is cleaned, a spin chuck disposed inside the chamber for rotating by seating the substrate, and a cover portion provided on the spin chuck for supplying a chemical solution to the substrate, And a plurality of recovery cups provided on the outer surface of the spin chuck, wherein the cover part has a recess formed therein for receiving the substrate, a protrusion formed from the edge of the storage part, A nozzle portion formed in the housing portion for spraying the chemical liquid on the substrate facing the substrate, a heating portion formed in the housing portion and facing the substrate for heating the chemical solution or the substrate, And an exhaust portion formed on either one of the flange portion and the exhaust portion and exhausting the gas to the outside of the chamber. When the driving portion is lowered, the number of the nozzle portion, the heating portion, There is more than one can be activated.

According to one aspect, the lower end of the flange forms a guide path formed to be bent, and the guide path can be configured to guide the gas to the recovery cup provided in the outer periphery of the spin chuck.

According to one aspect, the lower end of the flange portion can be configured to face the edge side of the substrate.

And the lower end of the flange portion may be formed to partially cover the lower end of the accommodating portion.

According to one aspect, the exhaust unit may include a recovery flow path for guiding the gas to the boundary between the accommodation portion and the flange portion, and a pump provided on the top of the cover portion and connected to the recovery flow path to suck the gas.

According to one aspect, the recovery flow path is formed at a portion facing the substrate, and a part of the recovery flow path may be formed on the inner surface of the cover portion and the rest may be formed to penetrate the upper portion of the cover portion.

According to one aspect, the recovery flow path may be formed to be inclined toward the upper side of the cover portion.

According to one aspect, the airflow formed on the substrate by the operation of the heating unit may be configured to be discharged through a recovery flow path formed outside the edge of the substrate.

According to one aspect, the nozzle unit includes a plurality of jetting units, and the plurality of jetting units may be provided in a straight line at a lower portion of the cover unit.

According to one aspect of the present invention, the heating unit includes a first heating lamp having a circular shape at a lower portion of the cover, and a second heating lamp having a larger diameter than the first heating lamp.

According to one aspect, the flange portion may be configured to guide the gas remaining in the space between the accommodation portion and the substrate to some of the exhaust portion and the remainder to the recovery cup provided outside the spin chuck.

According to the present invention, since the nozzle unit, the heating unit, and the exhaust unit are provided in the cover unit, the chemical liquid of SPM, DI, and N2 ejected from the nozzle unit is ejected onto the substrate, the substrate is maintained at a high temperature by the heating unit, The fume generated through the use of the acid can immediately remove the fume through the exhaust part, thereby shortening the time of the cleaning process, preventing damage to the substrate, and improving the productivity.

1 is a schematic view of a cleaning apparatus according to an embodiment of the present invention.
2 is a bottom view of the cover portion of Fig.
3 is a sectional view of 'A' - 'A' in FIG.

Hereinafter, embodiments will be described in detail with reference to exemplary drawings. It should be noted that, in adding reference numerals to the constituent elements of the drawings, the same constituent elements are denoted by the same reference symbols as possible even if they are shown in different drawings. In the following description of the embodiments, detailed description of known functions and configurations incorporated herein will be omitted when it may make the best of an understanding clear.

In describing the components of the embodiment, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the constituent elements from other constituent elements, and the terms do not limit the nature, order or order of the constituent elements. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; may be "connected,""coupled," or "connected. &Quot;

FIG. 1 is a schematic view of a cleaning apparatus according to an embodiment of the present invention, FIG. 2 is a bottom view of the cover unit of FIG. 1, and FIG. 3 is a sectional view of 'A' - 'A' of FIG. Referring to FIG. The cleaning apparatus 100 includes a chamber 110 that receives a substrate W and performs a cleaning process, a spin chuck 180 that rotates while seating the substrate W, a driving unit that moves up and down with respect to the substrate W A cover part 120 connected to the driving part 150 and heating the substrate W with a chemical solution sprayed onto the substrate W and a cover part 120 connected to the cover part 120 to supply a chemical solution for cleaning the substrate W And a recovery cup 190 provided at the outer periphery of the spin chuck 180 for recovering the chemical liquid dropped on the substrate.

The cleaning apparatus 100 may be a single wafer processing apparatus in which cleaning is performed by rotating the substrate W while supplying a chemical solution to the surface of the substrate W by receiving a single substrate W. [

The chamber 110 may be provided with a plurality of recovery cups 111 for recovering a chemical solution along the outer circumferential portion of the spin chuck 180 by receiving the substrate W to provide a space for performing cleaning, 160 may be provided with a chemical solution of sulfuric acid (H 2 SO 4) and hydrogen peroxide water (H 2 O 2) mixed solution SPM (Sulfuric Peroxide Mixture), DI and N 2 to the nozzle part 123 formed in the cover part 120.

The cover part 120 includes a frame 121, a nozzle part 123 for spraying SPM, DI, and N2 chemical liquid on the substrate W, and a heating part 122 for heating the substrate W at a position facing the substrate W. [ And an exhaust unit 140 for removing fumes.

The frame 121 is configured to move up and down according to the operation of the driving unit 150, and the driving unit 150 can be configured to have a structure of moving up and down using a cylinder. The upper surface of the substrate W mounted on the support pins 181 provided on the spin chuck 180 when the cylinder is to be lowered can be configured to be close to the frame 121. On the other hand, The frame 121 may be arranged at a position distant from the wobble W.

The inner surface of the frame 121 may have a receiving portion 122 formed on an inner surface thereof corresponding to the size of the substrate and a flange portion 126 protruding along the receiving portion 122.

The inner surface of the flange portion 126 may be formed with a concave shaped groove 141 and the lower end of the flange portion 126 may be formed to partially cover the lower end of the receiving portion 122.

The lower end of the flange portion 126 may include a guide path 124 formed to be bent.

Both ends of the guide path 124 may protrude downward from the center of the guide path 124. The one side of the guide path 124 may face the edge side of the substrate W. [ The guide path 124 may be configured to guide the gas above the substrate W to the inner space of the recovery cup 190 provided in the outer peripheral portion of the spin chuck 180.

 A nozzle part 123 may be provided at the center of the receiving part 122. The nozzle unit 123 may be formed with a hole for guiding the chemical solution inside the receiving part 122 so as to inject the chemical liquid of the SPM, DI, and N2 provided on the chemical solution supplying unit 160 onto the upper surface of the substrate W.

A plurality of injection holes 125 may be formed in one direction on the lower surface of the substrate W facing the substrate W and the injection holes 125 may be configured to inject the chemical liquid in parallel from the nozzle portion.

In addition, the heating unit 130 may be provided in the lower portion of the receiving unit 122. The heating unit 130 is provided at the lower portion of the storage unit 122 so that the heating unit 130 faces the substrate W in a state where the cover unit 120 is lowered and the substrate W is heated to a high temperature And can be configured to effectively perform heating and chemical solution heating.

The heating unit 130 may be a heating lamp, and the first heating lamp 127 may be provided in a first circular shape so as to heat the substrate W. [ Or the first heating lamp 127 may be provided with one or a plurality of heat lines in a circular shape.

The second heating lamp 129 may be provided in a circular shape having a larger diameter than the first heating lamp 127 and concentric with the first heating lamp 127. [ The second heating lamp 129 may also be provided with one or a plurality of heat lines in a circular shape. However, the present invention is not limited to the drawings, and the shape of the heating unit 130 may be substantially varied.

The heating unit 130 is provided on the lower surface of the cover unit 120 and the first heating lamp 127 and the second heating lamp 129 are partially or wholly exposed on the lower surface of the cover unit 120, And may be embedded in the inside of the unit 120.

Since the distance between the nozzle unit 123 and the substrate W is short when the cover unit 120 is lowered, the chemical liquid of SPM, DI, and N2 ejected from the nozzle unit 123 is prevented from dropping in the air The heating unit 130 can maintain the temperature of the surface of the substrate W at a high temperature higher than a certain level.

An exhaust part 140 may be formed on the interface between the receiving part 122 and the flange part 126. The exhaust part 140 is provided on the upper part of the cover part 120 and the recovery flow path 142 for guiding the gas to the boundary between the accommodating part 122 and the flange part 126, (Not shown).

A part of the recovery flow path 142 may be formed on the inner surface of the cover part 120 and the rest may be formed to penetrate the upper part of the cover part 120 have.

The recovery flow path 142 may be formed to be inclined toward the upper side of the cover part 120. The recovery flow path 142 may be formed on the outer surface of the substrate W, have.

When the chemical solution is heated by the operation of the heating unit 130 after the chemical solution is provided on the substrate W after the nozzle unit 123 is operated, the chemical solution spreads evenly on the substrate W, Lt; / RTI > The fume generated by the acid at a high temperature may be exhausted through the recovery flow path 142 formed outside the edge of the substrate W when the cover part 120 comes close to the substrate W Do.

The space between the receiving portion 122 and the substrate becomes narrow and the moving space of the fume is narrowed and can be discharged to the outside of the chamber 190 by flowing into the collecting line 142 by the operation of a pump (not shown).

The flange portion 126 and the receiving portion 122 may be formed such that the flange portion 126 covers one side of the receiving portion 122 by bending the difference in height. For example, the receiving portion 122 may be connected to the flange portion 126 at an angle of about 20 to 60 degrees.

The edge of the receiving portion 122 and the inner side surface of the flange portion 126 are connected to each other so that the inner side surface of the flange portion 126 can be formed with concave groove 141.

The concave groove 141 may be configured to guide the airflow generated on the substrate W to a part of the recovery flow path 142 when the receiving portion 122 and the substrate W are close to each other. And the remaining airflow is guided to the recovery cup 190 through the guide path 142 that is close to the recovery cup 190.

When the cover part 120 is close to the substrate W, the fume remains in the space between the receiving part 122 and the substrate W. The fume is discharged to the outside of the chamber 110 by the operation of the exhaust part 140 And the rest of the fumes may be recovered to the recovery cup 190 through the guide path 124 formed in the flange portion 126.

The cover part 120 of the present invention is provided with the nozzle part 123, the heating part 130 and the exhaust part 140 so that the chemical liquid of the SPM, DI and N2 sprayed from the nozzle part 123 is transferred to the substrate W, And the substrate is maintained at a high temperature and effectively heated by the heating unit 130. The fumes generated by using the acid at a high temperature in the process can be immediately removed through the exhaust unit 140 , The time of the cleaning process can be shortened, damage to the substrate W can be prevented, and productivity can be improved.

Although the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments. In addition, the present invention is not limited to the above-described embodiments, and various modifications and changes may be made thereto by those skilled in the art to which the present invention belongs. Therefore, the spirit of the present invention should not be construed as being limited to the above-described embodiments, and all of the equivalents or equivalents of the claims, as well as the following claims, are included in the scope of the present invention.

110: chamber 120: cover part
121: frame 122:
123: nozzle portion 126: flange portion
130: Heating section 140:
150: driving part 160: chemical liquid supply part
180: spin chuck 190: recovery cup
200: Cleaning device

Claims (22)

There is provided a cover part for heating a substrate, which provides a chemical solution to a substrate placed on a spin chuck,
A receiving portion having grooves formed therein for receiving the substrate;
A flange portion protruding from an edge of the accommodating portion and connected to the accommodating portion by a curved surface and providing a space on the substrate;
A nozzle unit formed in the accommodating unit and ejecting a chemical liquid onto the substrate, the nozzle unit facing the substrate;
A heating unit formed in the accommodating portion and facing the substrate to heat the chemical or the substrate;
An exhausting portion in which a recovery flow path is formed at either one of the accommodating portion and the flange portion and exhausts the gas to the outside of the chamber;
. The method according to claim 1,
And the flange portion has a concave inner side surface. The method according to claim 1,
The lower end of the flange forms a guide path formed to be bent, and the guide path guides the gas to the recovery cup provided at the outer periphery of the spin chuck. The method according to claim 1,
Wherein the flange portion guides a portion of the gas remaining in the space between the accommodation portion and the substrate to the exhaust portion and the other portion guides the recovery gas to the recovery cup provided outside the spin chuck. The method according to claim 1,
And the lower end of the flange portion faces the edge side of the substrate. The method according to claim 1,
Wherein a part of the return passage is formed on an inner surface of the cover part and the other part is formed to penetrate the upper part of the cover part. The method according to claim 1,
And the return flow path is formed at a boundary between the receiving portion and the flange portion. The method according to claim 1,
And the return flow path is inclined toward the upper side of the cover portion. The method according to claim 1,
Wherein the air flow formed on the substrate by the operation of the heating unit is discharged through the return flow path formed outside the edge of the substrate. The method according to claim 1,
Wherein the nozzle unit includes a plurality of jetting units, and the plurality of jetting units are provided in a lower portion of the cover unit. The method according to claim 1,
Wherein the heating unit includes a first heating lamp having a circular shape at a lower portion of the cover portion and a second heating lamp having a larger diameter than the first heating lamp spaced apart from the first heating lamp. A chamber for providing a space in which the substrate is cleaned;
A spin chuck disposed inside the chamber and rotating with the substrate placed thereon; And
A cover unit provided on the spin chuck to supply a chemical solution to the substrate and to heat the substrate;
A driving unit for driving the cover unit to move up and down;
A plurality of recovery cups provided on the outer surface of the spin chuck;
/ RTI >
The cover
A receiving portion having grooves formed therein for receiving the substrate;
A flange portion protruding from an edge of the accommodating portion and connected to the accommodating portion by a curved surface and providing a space on the substrate;
A nozzle unit formed in the accommodating unit and ejecting a chemical liquid onto the substrate, the nozzle unit facing the substrate;
A heating unit formed in the accommodating portion and facing the substrate to heat the chemical or the substrate;
An exhaust part formed at one of the accommodating part and the flange part and exhausting the gas to the outside of the chamber;
Wherein at least one of the nozzle unit, the heating unit, and the exhaust unit operates when the driving unit is lowered. 13. The method of claim 12,
Wherein the lower end of the flange portion forms a guide path formed to be bent, and the guide path guides the gas to the recovery cup provided in the outer circumferential portion of the spin chuck. 13. The method of claim 12,
And the lower end of the flange portion faces the edge side of the substrate. 13. The method of claim 12,
And the lower end of the flange portion is configured to partially cover a lower end of the accommodating portion. 13. The method of claim 12,
The exhaust part
A recovery flow path for guiding the gas to the boundary between the accommodating portion and the flange portion;
A pump provided at an upper portion of the cover portion and connected to the recovery flow path to suck the gas;
≪ / RTI > 17. The method of claim 16,
Wherein the recovery flow path is formed at a portion facing the substrate, and a part of the recovery flow path is formed on the inner surface of the cover portion and the rest is formed to pass through the upper portion of the cover portion. 17. The method of claim 16,
And the recovery flow path is formed to be inclined toward the upper side of the cover portion. 13. The method of claim 12,
And the air flow formed on the substrate by the operation of the heating unit is discharged through the recovery flow path formed outside the edge of the substrate. 13. The method of claim 12,
Wherein the nozzle unit includes a plurality of jetting units, and the plurality of jetting units are provided at a lower portion of the cover unit. 13. The method of claim 12,
Wherein the heating unit includes a first heating lamp having a circular shape at a lower portion of the cover portion and a second heating lamp having a larger diameter than the circular shape and disposed apart from the first heating lamp. 13. The method of claim 12,
Wherein the flange portion guides the gas remaining in the space between the accommodating portion and the substrate to a part of the exhaust portion and the remainder is guided to the recovery cup provided on the outside of the spin chuck.
KR1020150160468A 2015-11-16 2015-11-16 Cover portion and cleaning apparatus having the same KR20170056959A (en)

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Application Number Priority Date Filing Date Title
KR1020150160468A KR20170056959A (en) 2015-11-16 2015-11-16 Cover portion and cleaning apparatus having the same

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KR20170056959A true KR20170056959A (en) 2017-05-24

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