KR20170052788A - Hall sensor comprising active layer with enlarged contact area and method of fabricating the hall sensor - Google Patents

Hall sensor comprising active layer with enlarged contact area and method of fabricating the hall sensor Download PDF

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KR20170052788A
KR20170052788A KR1020150154416A KR20150154416A KR20170052788A KR 20170052788 A KR20170052788 A KR 20170052788A KR 1020150154416 A KR1020150154416 A KR 1020150154416A KR 20150154416 A KR20150154416 A KR 20150154416A KR 20170052788 A KR20170052788 A KR 20170052788A
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metal layer
contact portion
active layer
electrode
metal
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KR1020150154416A
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Korean (ko)
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KR101786207B1 (en
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김성우
이종화
조광철
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나노스 주식회사
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    • H01L43/065—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • H01L43/04—
    • H01L43/14—

Abstract

Provided are a hall sensor including an active layer having an extended contact area and a manufacturing method thereof. Specifically, the hall sensor includes an active layer and an electrode portion. The active layer is formed on the semiconductor substrate and has a structure including: a cross-shaped sensing portion on which a first axis and a second axis are perpendicularly crossed; and a contact portion which is located at four ends of the sensing portion. The electrode portion is disposed within the size of an upper region of the contact portion, and includes: a first metal layer and a second metal layer positioned opposite to each other at an end of the first axis of the sensing portion; and a third metal layer and a fourth metal layer positioned opposite to each other at an end of the second axis of the sensing portion. The present invention can solve conventional problems such as deterioration of the connectivity between the electrode and the active layer due to the step coverage. Therefore, it is possible to improve the efficiency of the sensor by stabilizing the offset and decreasing the input resistance.

Description

TECHNICAL FIELD [0001] The present invention relates to a Hall sensor including an active layer having an extended contact area and a method of manufacturing the Hall sensor.

The present invention relates to a Hall sensor, and more particularly, to a Hall sensor including an active layer whose contact area with an electrode is enlarged, and a manufacturing method thereof.

A hall sensor is a device that measures and detects a magnetic field or a current by using a Hall effect, and is used as a device for rotation control of a motor, a proximity switch, or a device embedded in a portable device. In general, a Hall effect is generated by using a voltage difference (Hall voltage) generated in a direction perpendicular to a current and a magnetic field when a magnetic field is positioned in a direction perpendicular to the direction of a current flowing through a conductor or a semiconductor And measures the strength of the magnetic field.

The hall sensor is mainly constructed by arranging a metal wiring layer, which is an electrode part, on the active layer and electrically connecting the same, and then connecting the external terminal to the sensor through a metal wiring layer. However, when various functional thin film layers such as ohmic metal are to be formed between the active layer and the electrode part in order to lower the resistance of the sensor, the active layer 20 having the pattern structure shown in FIG. 3 is formed on the active layer 20 and the ohmic metal 31 The ohmic metal 31 does not completely cover the side surface of the active layer and the metal wiring layer 33 formed on the ohmic metal 31 and the active layer 20 formed on the ohmic metal 31 are not covered by the step coverage, Voids are formed between the metal wiring layer 33 and the active layer 20, resulting in a problem that the electrical connection between the metal wiring layer 33 and the active layer 20 is not smooth. That is, the contact resistance is increased due to the generation of cavities, and the increase of the contact resistance causes a drop in the voltage generated in the active layer, thereby causing a problem of deteriorating the performance of the sensor. In addition, if the continuous use of the hole device that has been packaged in the application environment occurs, the reliability of the device is deteriorated.

In order to solve the above-described problems, the present invention provides a Hall sensor including an active layer having a structure in which a contact area with an electrode is enlarged, and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a semiconductor device including: a cross-shaped sensing unit disposed on a semiconductor substrate, the sensing unit having a first axis and a second axis vertically crossed and a contact unit positioned at four ends of the sensing unit; A first metal layer and a second metal layer which are disposed within the size of the upper region of the contact portion and located opposite to each other at the end of the first axis of the sensing portion, And an electrode part including a third metal layer and a fourth metal layer, which are positioned on the first electrode layer and the second electrode layer, respectively.

In one embodiment of the present invention, the active layer may include a compound semiconductor doped with an n-type impurity.

Each of the first metal layer to the fourth metal layer may have a structure in which an ohmic metal layer disposed on the contact portion and a metal wiring layer disposed on the ohmic metal layer are sequentially stacked.

Wherein the contact portion includes a first contact portion extending in the first axial direction and a second contact portion extending in the second axial direction, wherein a maximum width of the first contact portion is larger than a maximum width of the sensing portion, At least one side of the semiconductor substrate may be formed along an outer peripheral surface of the semiconductor substrate. The maximum width of the second contact portion may be greater than a maximum width of the sensing portion, and at least one side of the second contact portion may be formed along an outer peripheral surface of the semiconductor substrate.

Wherein the first metal layer and the second metal layer disposed on the first contact portion are used as a power supply electrode connected to an external power source to supply power and the third metal layer and the fourth metal layer disposed on the second contact portion, May be used as an electrode for Hall voltage output for measuring a Hall voltage generated in the Hall sensor.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: forming an active layer in the form of a thin film on a semiconductor substrate; inserting the active layer into a cruciform sensing portion crossing the first and second axes vertically; And forming an electrode portion in a size of an upper region of the contact portion, wherein the electrode portion includes a first metal layer positioned opposite to the end of the first axis of the sensing portion, And a third metal layer and a fourth metal layer positioned opposite to each other at an end of the second axis of the sensing part.

In one embodiment of the present invention, the method may further include doping the active layer with an n-type impurity using an ion implantation method.

The step of etching the active layer may be performed using any one of the methods selected from photolithography, electron beam lithography, and nanoimprint.

Each of the first metal layer to the fourth metal layer may be formed by sequentially laminating an ohmic metal layer disposed on the contact portion and a metal wiring layer disposed on the ohmic metal layer, May be carried out using a metal lift off process or a metal plating process.

The Hall sensor of the present invention can improve the yield of the manufacturing process by improving the contact area between the electrode part and the active layer due to the existing step coverage by enlarging the area of contact between the active layer and the electrode part.

In addition, the offset of the sensor can be stabilized due to the high connectivity between the active layer and the electrode portion, the input resistance can be reduced, and the efficiency of the sensor can be improved.

However, the effects of the present invention are not limited to those mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

1A to 1C are schematic views for explaining a method of manufacturing a Hall sensor according to an embodiment of the present invention.
2 is a side view of an active layer and an electrode portion of a Hall sensor according to an embodiment of the present invention.
FIG. 3 is a cross-sectional view of a structure of a Hall sensor having an active layer without contact area with a conventional metal wiring, and a side view of an active layer and a metal wiring.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. Rather, the intention is not to limit the invention to the particular forms disclosed, but rather, the invention includes all modifications, equivalents and substitutions that are consistent with the spirit of the invention as defined by the claims. Like reference numerals throughout the specification denote like elements. In the drawings, the thicknesses of the layers and regions may be exaggerated or reduced for clarity. Like reference numerals throughout the specification denote like elements.

One aspect of the present invention can provide a method of manufacturing an Hall sensor including an active layer whose contact area is widened. Specifically, the Hall sensor includes a step of preparing a semiconductor substrate, 1) forming an active layer in the form of a thin film on the semiconductor substrate, 2) sensing the active layer in a cross shape in which the first and second axes intersect vertically, And a contact portion positioned at four ends of the sensing portion, and 3) forming an electrode portion within the size of the upper region of the contact portion. The electrode unit may include a first metal layer and a second metal layer positioned opposite to each other at an end of the first axis of the sensing unit and a third metal layer and a fourth metal layer positioned opposite to each other at an end of the second axis of the sensing unit .

1A to 1C are schematic views for explaining a method of manufacturing a Hall sensor according to an embodiment of the present invention.

Referring to FIG. 1A, a semiconductor substrate 100 may be prepared and an active layer 200 in the form of a thin film may be formed on the semiconductor substrate 100. The semiconductor substrate 100 refers to a substrate including a compound semiconductor material, and may be semi-insulating. The semiconductor substrate 100 may be formed on the substrate itself or on a separate substrate such as silicon (Si), gallium arsenide (GaAs), gallium phosphide (GaP), or indium phosphide (InP) Lt; / RTI > More specifically, the semiconductor substrate 100 may be formed of a compound in which one or more materials selected from among gallium (Ga), indium (In), aluminum (Al), arsenic (As), phosphorous (P), and antimony . ≪ / RTI >

A buffer layer (not shown) may be formed on the semiconductor substrate 100 before the active layer 200 is formed. The buffer layer is disposed to mitigate the occurrence of lattice mismatches or dislocations between the semiconductor substrate 100 and the active layer 200, thereby forming a material used as an ordinary buffer layer. Specifically, for example, the buffer layer may be undoped such as silicon (Si), silicon carbide (SiC), zinc oxide (ZnO), gallium arsenide (GaAs), gallium nitride (GaN) , But is not limited thereto.

The active layer 200 formed on the semiconductor substrate 100 may be a material layer made of a compound semiconductor which functions as an active layer in which carriers move and has excellent electron mobility. Specifically, the active layer 200 may include a compound in which one or more materials selected from gallium (Ga), indium (In), arsenic (As) and antimony (Sb) are mixed. The active layer 200 may be formed on the semiconductor substrate 100 by a conventional semiconductor deposition method. For example, the active layer 200 may be formed using a metal organic chemical vapor deposition (MOCVD) method, a molecular beam epitaxy (MBE) method, an electron beam deposition method, or a sputtering method ) May be used, but the present invention is not limited thereto.

In one embodiment of the present invention, the active layer 200 may further be doped with an n-type impurity by ion implantation. The active layer 200 may be formed of a doped conductive semiconductor layer. The resistance of the active layer 200 can be controlled through doping of the active layer 200 and the concentration of the n-type impurity can be controlled according to the resistance value of the Hall sensor to be manufactured. Specifically, for example, the n-type impurity may be silicon (Si), tin (Sn), serylium (Se), telenium (Te), or germanium (Ge), but is not limited thereto. In general, ion implantation is a technique for accelerating ion implantation of impurities to be doped to the surface of a target, which can be performed at a lower temperature than the conventional impurity implantation technique and control the amount of impurities And the effect of uniform distribution of the impurities can be exhibited.

Then, the active layer 200 may be etched in the same manner as the structure shown in FIG. 1B. More specifically, the active layer 200 includes a cross-shaped sensing part 210 in which first and second axes are perpendicularly crossed, and a contact part 230 positioned at four ends of the sensing part 210 Structure can be etched. The width and length of the first axis and the second axis of the sensing unit 210 can be easily adjusted according to characteristics of the Hall sensor to be manufactured.

In detail, the step of etching the active layer 200 in the form of a thin film is performed using any one of the methods selected from photo lithography, electron projection lithography, and nanoimprint Lt; / RTI > The photolithography uses a mask pattern. A mask pattern formed by the sensing unit 210 and the contact unit 230 is disposed on the active layer 200, and the mask pattern is formed through exposure, development, The active layer 200 having the structure as shown in FIG. 1B may be formed on the semiconductor substrate 100 by etching a part of the active layer 200 except for the disposed region. The mask pattern, but may be made of a material of oxides such as a nitride (SiNx) or silicon oxide (SiO 2) that contains a nitrogen, it is not limited thereto.

In the electron beam lithography, the structure including the sensing part 210 and the contact part 230 is directly patterned on the active layer 200 without a separate mask to perform etching. have. The nanoimprint may be formed by forming an imprint resist on the active layer 200 and then patterning the sensing part 210 and the contact part 230 on the active layer 200 through a patterned template. And etching the region except for the mask pattern, which is suitable for mass production, and the manufacturing cost of the mask pattern is relatively low, so that the manufacturing cost can be reduced.

1B, the sensing unit 210 has a cross shape and is integrally connected to the sensing unit 210. The contact unit 230 includes a first contact portion 230 extending in the first axis direction, (231) and a second contact portion (233) stretched in the second axial direction.

The maximum width of the two first contact portions 231 disposed on the imaginary line extending in the first axis direction may be larger than the maximum width of the portion extending in the first axis direction of the sensing portion 210 . This may be for the purpose of improving the contact area with the electrode portion disposed on the first contact portion 231 thereafter.

At least one side of the shape of the first contact portion 231 may be formed along the outer circumferential surface of the semiconductor substrate 100 which defines individual Hall elements. This makes it possible to ensure convenience in the electrode forming operation, which is a subsequent process. Specifically, for example, when the first contact portion 231 is formed in a complicated shape, the profile of the electrode disposed on the first contact portion 231 must have a complicated structure. Therefore, In the case where at least one side of the first contact portion 231 is formed along the outer peripheral surface of the semiconductor substrate 100 as described above, convenience in the subsequent electrode forming operation can be ensured. In one embodiment of the present invention, the approximate shape of the first contact portion 231 may have a pentagonal structure.

The maximum width of the two second contact portions 233 disposed on the hypothetical line extending in the second axial direction is greater than the maximum width of the portion extending in the second axial direction of the sensing portion 210 . This may be for the purpose of improving the contact area with the electrode portion disposed in the second contact portion 233 thereafter.

At least one side of the shape of the second contact portion 233 may be formed along the outer circumferential surface of the semiconductor substrate 100 which defines individual Hall elements. This makes it possible to ensure convenience in the electrode forming operation, which is a subsequent process. For example, when the second contact portion 233 is formed in a complicated shape, the profile of the electrode disposed on the second contact portion 233 must have a complicated structure. Therefore, 2 contact portion 233 is formed along the outer circumferential surface of the semiconductor substrate 100, the convenience in the subsequent electrode forming operation can be ensured. In an embodiment of the present invention, the approximate shape of the second contact portion 233 may have a pentagonal structure.

Referring to FIG. 1C, the electrode unit 300 may be formed within the upper region of the contact portion 230 of the active layer 200. Specifically, the electrode unit 300 forms a first metal layer and a second metal layer so as to be opposed to each other at the end of the first axis of the sensing unit 210, and the second metal layer is disposed at the end of the second axis of the sensing unit 210 And the third metal layer and the fourth metal layer may be formed so as to be opposed to each other.

In an embodiment of the present invention, the first metal layer and the second metal layer disposed on the first contact portion 231 are used as a power supply electrode connected to an external power source to supply power, and the second contact portion 233 may be used as a Hall voltage output electrode for measuring a Hall voltage generated in the Hall sensor. The widths and lengths of the sensing portions extended in the first axis direction and the second axis direction can be easily adjusted according to the characteristics of the Hall sensor to be manufactured.

Specifically, each of the first metal layer to the fourth metal layer is formed by sequentially laminating an ohmic metal layer 310 disposed on the contact portion and a metal interconnection layer disposed on the ohmic metal layer 330 . That is, one metal layer formed in the upper region of the contact portion 230 of the active layer 200 has a structure in which the ohmic metal layer 310 and the metal wiring layer 330 are sequentially stacked, One metal layer (one of the first metal layer to the fourth metal layer) may be formed in each region of the contact portion 230 divided into four regions connected to the four end portions of the sensing portion 210.

Specifically, the ohmic metal layer 310 may be disposed to minimize the resistance generated when the active layer 200 is connected to the metal wiring layer 330 disposed on the ohmic metal layer 310. The ohmic metal layer 310 includes a material that is ohmic contact with respect to the active layer 200. The ohmic metal layer 310 may be formed of a metal material used for normal ohmic contact depending on the material of the active layer. And may be a single layer or a multi-layer structure depending on the embodiment. For example, the ohmic metal layer 310 may include at least one metal selected from the group consisting of titanium (Ti), gold (Au), germanium (Ge), nickel (Ni), and platinum (Pt) In one embodiment of the present invention, the ohmic metal layer 310 may be a multilayer of Au / Ge / Ni / Au / Ti.

The metal interconnection layer 330 may be disposed for bonding with a metal wire during a process of assembling the hall sensor. The metal interconnection layer 330 is formed on the ohmic metal layer 310, and any metal used as an ordinary metal interconnection layer can be used. For example, the metal wiring layer 330 may include at least one metal selected from the group consisting of titanium (Ti), gold (Au), aluminum (Al), copper (Cu), platinum (Pt), and tungsten In one embodiment of the present invention, the metal wiring layer 330 may be a multi-layered structure of Ti / Pt / Au / Ti.

The step of forming the ohmic metal layer 310 and the metal wiring layer 330 or the electrode part 300 within the upper area of the contact part 230 may be performed by a metal lift- Or the like.

The metal lift off process is a method of selectively applying a metal layer. After a mask pattern is disposed in an upper region of the contact portion 230, a metal layer is applied, and the mask pattern is removed to remove the contact portion 230 The ohmic metal layer 310 or the metal wiring layer 330 may be formed only within the size of the upper region of the ohmic metal layer 310. [ The metal plating process is also performed using a conventional plating process, so that the metal layer can be plated only within the size of the upper region of the contact portion 230.

2 is a side view of an active layer and an electrode portion of a Hall sensor according to an embodiment of the present invention. 2 is a side view of the region A-A 'in FIG. 1C.

2, the area of the contact portion 230 of the active layer 200 is enlarged to a region where the electrode portion 300 is to be formed, so that the ohmic metal layer 310 is extended And the metal wiring layer 330 formed on the ohmic metal layer 310 is also formed to be flat and flat.

As described above, the present invention can improve the connectivity between the active layer and the electrode portion by disposing the active layer in a region where the contact area with the electrode portion is expanded, and arranging the electrode portion in the region where the active layer is disposed. This can improve the yield of the manufacturing process because the metal wiring disposed at the end of the active layer of the conventional Hall sensor is disconnected from the active layer as shown in FIG. 3 described above.

Another aspect of the present invention can provide a hall sensor manufactured by " a method for manufacturing an Hall sensor including the above-described active layer whose contact area is extended. &Quot;

Since the above-mentioned Hall sensor is manufactured by the manufacturing method of the Hall sensor described above, the Hall sensor can be the same as that described in the item of the manufacturing method of the Hall sensor, so that the above explanation will be omitted and a detailed description will be omitted And a specific configuration of the Hall sensor can be described below.

1C, the Hall sensor according to an exemplary embodiment of the present invention includes a sensing unit 210 disposed on a semiconductor substrate 100 and having a first axis and a second axis perpendicularly intersected with each other, And a contact portion 230 positioned at four ends of the sensing portion 210. The sensing portion 210 is disposed within the size of the upper region of the contact portion 230, A first metal layer and a second metal layer positioned opposite to each other at the end of the first axis of the sensing part and an electrode part 300 composed of a third metal layer and a fourth metal layer positioned opposite to each other at the end of the second axis of the sensing part Lt; / RTI >

The active layer 200 includes a compound semiconductor layer as an active layer in which charges move in the Hall sensor, and a current supplied to the active layer 200 by the electrode unit 300 flows in a direction perpendicular to the current. When a magnetic field is applied, a Hall voltage is generated in the active layer 200, and a voltage change according to the intensity of the magnetic field sensed through the Hall voltage output electrode of the electrode unit 300 is output to perform a sensing function. In one embodiment of the present invention, the active layer 200 may include a compound semiconductor doped with an n-type impurity.

The ohmic metal layer 310 disposed on the contact portion 230 and the metal wiring layer 330 disposed on the ohmic metal layer 310 are sequentially formed on the first metal layer to the fourth metal layer, Or may have a laminated structure.

More specifically, the contact portion 230 of the active layer 200 is divided into a first contact portion 231 extending in the first axis direction and a second contact portion 233 extending in the second axis direction, The first metal layer and the second metal layer disposed on the second contact portion 233 are used as a power supply electrode connected to an external power source to supply power, and the third metal layer and the fourth metal layer And the metal layer may be used as a hole voltage output electrode for measuring a Hall voltage generated in the Hall sensor. That is, the first metal layer and the second metal layer disposed on the first contact portion 231 of the active layer 200 around the first axis are connected to each other to excite the Hall sensor And the third metal layer and the fourth metal layer disposed on the second contact portion 233 of the active layer 200 are connected to each other around the second axis so that the Hall sensor is driven And an input / output terminal for measuring Hall voltage to measure a change in Hall voltage generated on the active layer 200 according to a magnetic field strength sensed by the hall sensor.

As described above, the Hall sensor of the present invention can stabilize the offset as the connectivity of the active layer and the electrode portion increases by the electrode portion disposed in the region of the active layer having the extended contact area with the electrode portion And the input resistance can be lowered, which improves the efficiency of the sensor, so that it is expected to be utilized in related fields.

It should be noted that the embodiments of the present invention disclosed in the present specification and drawings are only illustrative of specific examples for the purpose of understanding and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.

100: semiconductor substrate 200: active layer
210: sensing part of active layer 230: contact part of active layer
231: first contact portion 233: second contact portion
300: electrode part 310: ohmic metal layer
330: metal wiring layer

Claims (14)

An active layer disposed on the semiconductor substrate and having a cross-shaped sensing portion in which the first and second axes intersect perpendicularly and a contact portion located at four ends of the sensing portion; And
A first metal layer and a second metal layer disposed within the size of the upper region of the contact portion and positioned opposite to each other at an end of the first axis of the sensing portion, a third metal layer positioned opposite to the end of the second axis of the sensing portion, And an electrode part made of a fourth metal layer. The method according to claim 1,
Wherein the active layer includes a compound semiconductor doped with an n-type impurity. The semiconductor device according to claim 1, wherein each of the first metal layer to the fourth metal layer comprises:
An ohmic metal layer disposed on the contact portion; And
And a metal wiring layer disposed on the ohmic metal layer are sequentially stacked. The connector according to claim 1, wherein the contact portion
A first contact portion extending in the first axial direction; And
And a second contact portion extending in the second axial direction. 5. The method of claim 4,
Wherein the maximum width of the first contact portion is larger than the maximum width of the portion extending in the first axial direction of the sensing portion. 5. The method of claim 4,
Wherein at least one side of the first contact portion shape is formed along an outer peripheral surface of the semiconductor substrate. 5. The method of claim 4,
Wherein a maximum width of the second contact portion is larger than a maximum width of the sensing portion. 5. The method of claim 4,
Wherein at least one side of the second contact portion shape is formed along an outer peripheral surface of the semiconductor substrate. 5. The method of claim 4,
The first metal layer and the second metal layer disposed on the first contact portion are used as a power supply electrode connected to an external power source to supply power,
Wherein the third metal layer and the fourth metal layer disposed on the second contact portion are used as an electrode for outputting a Hall voltage for measuring a Hall voltage generated in the Hall sensor. Forming an active layer in the form of a thin film on a semiconductor substrate;
Etching the active layer so as to have a structure including a cross-shaped sensing portion in which the first axis and the second axis are perpendicularly crossed and a contact portion positioned at four ends of the sensing portion; And
Forming an electrode portion within the size of the upper region of the contact portion,
The electrode unit may include a first metal layer and a second metal layer positioned opposite to each other at an end of the first axis of the sensing unit and a third metal layer and a fourth metal layer positioned opposite to each other at an end of the second axis of the sensing unit Of the hole sensor. 11. The method of claim 10,
Further comprising the step of doping the active layer with an n-type impurity using an ion implantation method. 11. The method of claim 10,
The step of etching the active layer may include:
Wherein the method is performed using any one method selected from the group consisting of photolithography, electron beam lithography, and nanoimprint. 11. The method of claim 10,
Wherein each of the first metal layer to the fourth metal layer comprises:
An ohmic metal layer disposed on the contact portion; And
And a metal interconnection layer disposed over the ohmic metal layer are sequentially stacked. 11. The method of claim 10,
Wherein the forming of the electrode portion comprises:
A metal lift-off process, or a metal plating process.
KR1020150154416A 2015-11-04 2015-11-04 Hall sensor comprising active layer with enlarged contact area and method of fabricating the hall sensor KR101786207B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220030362A (en) * 2020-08-28 2022-03-11 (재)한국나노기술원 Integrated 3-axis hall sensor and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220030362A (en) * 2020-08-28 2022-03-11 (재)한국나노기술원 Integrated 3-axis hall sensor and manufacturing method thereof

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